KR101613062B1 - 노광 장치 및 노광 방법, 디바이스 제조 방법 - Google Patents

노광 장치 및 노광 방법, 디바이스 제조 방법 Download PDF

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Publication number
KR101613062B1
KR101613062B1 KR1020147016498A KR20147016498A KR101613062B1 KR 101613062 B1 KR101613062 B1 KR 101613062B1 KR 1020147016498 A KR1020147016498 A KR 1020147016498A KR 20147016498 A KR20147016498 A KR 20147016498A KR 101613062 B1 KR101613062 B1 KR 101613062B1
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South Korea
Prior art keywords
substrate
liquid
stage
alignment
projection optical
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Expired - Fee Related
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KR1020147016498A
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English (en)
Korean (ko)
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KR20140097387A (ko
Inventor
마사히코 야스다
다카히로 마사다
유호 가나야
다다시 나가야마
겐이치 시라이시
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가부시키가이샤 니콘
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7007—Alignment other than original with workpiece
    • G03F9/7015—Reference, i.e. alignment of original or workpiece with respect to a reference not on the original or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020147016498A 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법 Expired - Fee Related KR101613062B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2003-350628 2003-10-09
JP2003350628 2003-10-09
JPJP-P-2004-045103 2004-02-20
JP2004045103 2004-02-20
PCT/JP2004/015332 WO2005036624A1 (ja) 2003-10-09 2004-10-12 露光装置及び露光方法、デバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127033864A Division KR101476903B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020167009409A Division KR101832713B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20140097387A KR20140097387A (ko) 2014-08-06
KR101613062B1 true KR101613062B1 (ko) 2016-04-19

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ID=34436914

Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020127033864A Expired - Fee Related KR101476903B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020067006560A Expired - Fee Related KR101183850B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020187005006A Abandoned KR20180021920A (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020127013752A Expired - Fee Related KR101261774B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020117024988A Expired - Fee Related KR101183851B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020167009409A Expired - Fee Related KR101832713B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020137022692A Expired - Fee Related KR101523456B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020147016498A Expired - Fee Related KR101613062B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법

Family Applications Before (7)

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KR1020127033864A Expired - Fee Related KR101476903B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020067006560A Expired - Fee Related KR101183850B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020187005006A Abandoned KR20180021920A (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020127013752A Expired - Fee Related KR101261774B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020117024988A Expired - Fee Related KR101183851B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020167009409A Expired - Fee Related KR101832713B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법
KR1020137022692A Expired - Fee Related KR101523456B1 (ko) 2003-10-09 2004-10-12 노광 장치 및 노광 방법, 디바이스 제조 방법

Country Status (10)

Country Link
US (5) US8130361B2 (enExample)
EP (6) EP3206083B1 (enExample)
JP (9) JP5136565B2 (enExample)
KR (8) KR101476903B1 (enExample)
CN (1) CN102360167B (enExample)
HK (1) HK1259349A1 (enExample)
IL (1) IL174854A (enExample)
SG (3) SG147431A1 (enExample)
TW (4) TW201738932A (enExample)
WO (1) WO2005036624A1 (enExample)

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JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
JP6307730B1 (ja) * 2016-09-29 2018-04-11 株式会社新川 半導体装置の製造方法、及び実装装置
JP2018116036A (ja) * 2017-01-13 2018-07-26 株式会社エンプラス マーカ搭載用ユニット
KR102161185B1 (ko) * 2017-02-24 2020-09-29 어플라이드 머티어리얼스, 인코포레이티드 기판의 진공 프로세싱을 위한 장치, 기판의 진공 프로세싱을 위한 시스템, 및 진공 챔버에서의 기판 캐리어 및 마스크 캐리어의 운송을 위한 방법
JP7297878B2 (ja) * 2018-10-01 2023-06-26 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置におけるオブジェクト
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