KR101480529B1 - 실리콘 및 타이타늄 질화물의 인시츄 증착 - Google Patents

실리콘 및 타이타늄 질화물의 인시츄 증착 Download PDF

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KR101480529B1
KR101480529B1 KR20080044756A KR20080044756A KR101480529B1 KR 101480529 B1 KR101480529 B1 KR 101480529B1 KR 20080044756 A KR20080044756 A KR 20080044756A KR 20080044756 A KR20080044756 A KR 20080044756A KR 101480529 B1 KR101480529 B1 KR 101480529B1
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precursor
gas
chamber
silicon
depositing
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KR20080100793A (ko
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알버트 하스퍼
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에이에스엠 인터내셔널 엔.브이.
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR20080044756A 2007-05-14 2008-05-14 실리콘 및 타이타늄 질화물의 인시츄 증착 Active KR101480529B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/748,364 2007-05-14
US11/748,364 US7629256B2 (en) 2007-05-14 2007-05-14 In situ silicon and titanium nitride deposition

Publications (2)

Publication Number Publication Date
KR20080100793A KR20080100793A (ko) 2008-11-19
KR101480529B1 true KR101480529B1 (ko) 2015-01-08

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Country Status (3)

Country Link
US (1) US7629256B2 (https=)
JP (1) JP5294694B2 (https=)
KR (1) KR101480529B1 (https=)

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KR101431197B1 (ko) * 2008-01-24 2014-09-17 삼성전자주식회사 원자층 증착설비 및 그의 원자층 증착방법
US20090197424A1 (en) * 2008-01-31 2009-08-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
WO2010110263A1 (ja) * 2009-03-27 2010-09-30 東京エレクトロン株式会社 金属窒化膜の成膜方法および記憶媒体
US20100264506A1 (en) * 2009-04-17 2010-10-21 Olivier Evrard Light-Tight Silicon Radiation Detector
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
JP5589878B2 (ja) * 2011-02-09 2014-09-17 東京エレクトロン株式会社 成膜装置
JP5753450B2 (ja) * 2011-06-30 2015-07-22 東京エレクトロン株式会社 成膜装置
JP2014022594A (ja) * 2012-07-19 2014-02-03 Tokyo Electron Ltd 膜割れ検出装置及び成膜装置
US9512519B2 (en) 2012-12-03 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Atomic layer deposition apparatus and method
JP6017396B2 (ja) 2012-12-18 2016-11-02 東京エレクトロン株式会社 薄膜形成方法および薄膜形成装置
WO2015140933A1 (ja) 2014-03-18 2015-09-24 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及び記録媒体
JP6319171B2 (ja) * 2014-07-28 2018-05-09 東京エレクトロン株式会社 成膜装置
JP6435967B2 (ja) * 2015-03-31 2018-12-12 東京エレクトロン株式会社 縦型熱処理装置
AT518081B1 (de) * 2015-12-22 2017-07-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
US20170207078A1 (en) * 2016-01-15 2017-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition apparatus and semiconductor process
US9859157B1 (en) 2016-07-14 2018-01-02 International Business Machines Corporation Method for forming improved liner layer and semiconductor device including the same
US9947582B1 (en) 2017-06-02 2018-04-17 Asm Ip Holding B.V. Processes for preventing oxidation of metal thin films
US11306395B2 (en) * 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10605530B2 (en) * 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
SG11202008792XA (en) * 2018-03-23 2020-10-29 Kokusai Electric Corp Substrate processing apparatus, method of manufacturing semiconductor device and program
AT520629B1 (de) * 2018-05-22 2019-06-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
CN111471954B (zh) * 2020-04-13 2021-04-06 北京科技大学 一种在纯钛和钛合金表面原位合成共格Ti2N薄膜的方法
KR20220076343A (ko) * 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
JP2023050151A (ja) * 2021-09-29 2023-04-10 エーエスエム・アイピー・ホールディング・ベー・フェー 垂直炉用ガスインジェクタ
CN115404464A (zh) * 2022-09-23 2022-11-29 江苏微导纳米科技股份有限公司 沉积薄膜的方法和设备、薄膜以及太阳能电池
WO2024158681A1 (en) * 2023-01-26 2024-08-02 Applied Materials, Inc. Purge system to clean wafer backside for ring susceptor

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