JP5589878B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5589878B2 JP5589878B2 JP2011026400A JP2011026400A JP5589878B2 JP 5589878 B2 JP5589878 B2 JP 5589878B2 JP 2011026400 A JP2011026400 A JP 2011026400A JP 2011026400 A JP2011026400 A JP 2011026400A JP 5589878 B2 JP5589878 B2 JP 5589878B2
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- 230000008021 deposition Effects 0.000 title 1
- 239000007789 gas Substances 0.000 claims description 255
- 238000010926 purge Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 description 79
- 239000010408 film Substances 0.000 description 42
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
複数の基板を棚状に保持した基板保持具を、その周囲に加熱部が配置された縦型の反応管内に搬入して、基板に対して成膜処理を行う成膜装置において、
第1の処理ガスを基板に供給するための複数のガス吐出口が各基板間の高さ位置毎に各々形成された第1のガスインジェクターと、
第1の処理ガスと反応する第2の処理ガスを基板に供給するために、前記第1のガスインジェクターに対して前記反応管の周方向に離間して設けられ、前記反応管の長さ方向に沿って伸びると共に基板側にガス吐出口が形成された第2のガスインジェクターと、
前記第1のガスインジェクターに対して前記反応管の周方向に離間した位置にて前記反応管の長さ方向に沿って伸びるように設けられ、前記基板保持具に保持される基板の保持領域の上端から下端に亘ってパージガス供給用のスリットが形成された第3のガスインジェクターと、
前記保持領域を介して前記第1のガスインジェクターとは反対側に形成され、前記反応管内の雰囲気を排気するための排気口と、
前記反応管内に第1の処理ガス及び第2の処理ガスを順番に供給すると共に、これら処理ガスの切り替え時には前記反応管内にパージガスを供給して当該反応管内の雰囲気を置換するように制御信号を出力する制御部と、を備え、
前記スリットは、前記第3のガスインジェクターの長さ方向に複数に分割され、
分割されたスリットの長さ寸法は、前記第3のガスインジェクターの上方側及び下方側の一方側から他方側に向かって徐々に長くなるように設定されていることを特徴とする。
また、前記第3のガスインジェクターは、前記第2のガスインジェクターを兼用していても良い。
(実験条件)
12 反応管
21 排気口
52 ガス吐出口
50 スリット
51a〜51c ガスインジェクター
55 貯留源
Claims (3)
- 複数の基板を棚状に保持した基板保持具を、その周囲に加熱部が配置された縦型の反応管内に搬入して、基板に対して成膜処理を行う成膜装置において、
第1の処理ガスを基板に供給するための複数のガス吐出口が各基板間の高さ位置毎に各々形成された第1のガスインジェクターと、
第1の処理ガスと反応する第2の処理ガスを基板に供給するために、前記第1のガスインジェクターに対して前記反応管の周方向に離間して設けられ、前記反応管の長さ方向に沿って伸びると共に基板側にガス吐出口が形成された第2のガスインジェクターと、
前記第1のガスインジェクターに対して前記反応管の周方向に離間した位置にて前記反応管の長さ方向に沿って伸びるように設けられ、前記基板保持具に保持される基板の保持領域の上端から下端に亘ってパージガス供給用のスリットが形成された第3のガスインジェクターと、
前記保持領域を介して前記第1のガスインジェクターとは反対側に形成され、前記反応管内の雰囲気を排気するための排気口と、
前記反応管内に第1の処理ガス及び第2の処理ガスを順番に供給すると共に、これら処理ガスの切り替え時には前記反応管内にパージガスを供給して当該反応管内の雰囲気を置換するように制御信号を出力する制御部と、を備え、
前記スリットは、前記第3のガスインジェクターの長さ方向に複数に分割され、
分割されたスリットの長さ寸法は、前記第3のガスインジェクターの上方側及び下方側の一方側から他方側に向かって徐々に長くなるように設定されていることを特徴とする成膜装置。 - 処理ガスの切り替え時に前記第3のガスインジェクターから供給されるパージガスの総流量は、基板の保持枚数をNとすると、0.05×N〜2.0×Nリットル/分であることを特徴とする請求項1に記載の成膜装置。
- 前記第3のガスインジェクターは、前記第2のガスインジェクターを兼用していることを特徴とする請求項1または2に記載の成膜装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011026400A JP5589878B2 (ja) | 2011-02-09 | 2011-02-09 | 成膜装置 |
KR1020120011750A KR101504910B1 (ko) | 2011-02-09 | 2012-02-06 | 성막 장치 |
US13/366,663 US20120199067A1 (en) | 2011-02-09 | 2012-02-06 | Film-forming apparatus |
TW101103983A TWI496937B (zh) | 2011-02-09 | 2012-02-08 | 成膜裝置 |
CN201210028975.6A CN102634773B (zh) | 2011-02-09 | 2012-02-09 | 成膜装置 |
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JP2011026400A JP5589878B2 (ja) | 2011-02-09 | 2011-02-09 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012169307A JP2012169307A (ja) | 2012-09-06 |
JP5589878B2 true JP5589878B2 (ja) | 2014-09-17 |
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JP2011026400A Active JP5589878B2 (ja) | 2011-02-09 | 2011-02-09 | 成膜装置 |
Country Status (5)
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US (1) | US20120199067A1 (ja) |
JP (1) | JP5589878B2 (ja) |
KR (1) | KR101504910B1 (ja) |
CN (1) | CN102634773B (ja) |
TW (1) | TWI496937B (ja) |
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US20090197424A1 (en) * | 2008-01-31 | 2009-08-06 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing semiconductor device |
US8409352B2 (en) * | 2010-03-01 | 2013-04-02 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus |
JP5243519B2 (ja) * | 2010-12-22 | 2013-07-24 | 東京エレクトロン株式会社 | 成膜装置 |
KR101408084B1 (ko) * | 2011-11-17 | 2014-07-04 | 주식회사 유진테크 | 보조가스공급포트를 포함하는 기판 처리 장치 |
KR101364701B1 (ko) * | 2011-11-17 | 2014-02-20 | 주식회사 유진테크 | 위상차를 갖는 반응가스를 공급하는 기판 처리 장치 |
JP5966649B2 (ja) * | 2012-06-18 | 2016-08-10 | 東京エレクトロン株式会社 | 熱処理装置 |
JP6128969B2 (ja) * | 2013-06-03 | 2017-05-17 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびプログラム |
JP6270575B2 (ja) | 2014-03-24 | 2018-01-31 | 株式会社日立国際電気 | 反応管、基板処理装置及び半導体装置の製造方法 |
JP6320824B2 (ja) | 2014-03-31 | 2018-05-09 | 株式会社東芝 | ガス供給管、およびガス処理装置 |
JP6380063B2 (ja) | 2014-12-08 | 2018-08-29 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法、および、気相成長装置 |
JP6435967B2 (ja) * | 2015-03-31 | 2018-12-12 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
KR102397908B1 (ko) * | 2015-08-19 | 2022-05-16 | 삼성전자주식회사 | 박막 증착 장치 |
JP6462161B2 (ja) | 2016-02-09 | 2019-01-30 | 株式会社Kokusai Electric | 基板処理装置および半導体装置の製造方法 |
JP6804270B2 (ja) * | 2016-11-21 | 2020-12-23 | 東京エレクトロン株式会社 | 基板処理装置、および基板処理方法 |
JP6737215B2 (ja) * | 2017-03-16 | 2020-08-05 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
KR102269364B1 (ko) * | 2017-05-30 | 2021-06-28 | 주식회사 원익아이피에스 | 기판처리 장치의 반응기 |
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JP2019047027A (ja) * | 2017-09-05 | 2019-03-22 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法およびプログラム |
JP6925214B2 (ja) * | 2017-09-22 | 2021-08-25 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
KR102559965B1 (ko) | 2018-03-23 | 2023-07-25 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램 |
JP7253972B2 (ja) * | 2019-05-10 | 2023-04-07 | 東京エレクトロン株式会社 | 基板処理装置 |
CN111180362B (zh) * | 2020-01-02 | 2023-09-01 | 长江存储科技有限责任公司 | 一种气体处理炉和提高晶圆表面气体处理均匀性的方法 |
JP2022124138A (ja) * | 2021-02-15 | 2022-08-25 | 東京エレクトロン株式会社 | 処理装置 |
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JP4045689B2 (ja) * | 1999-04-14 | 2008-02-13 | 東京エレクトロン株式会社 | 熱処理装置 |
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JP2005259841A (ja) * | 2004-03-10 | 2005-09-22 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP4475136B2 (ja) * | 2005-02-18 | 2010-06-09 | 東京エレクトロン株式会社 | 処理システム、前処理装置及び記憶媒体 |
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JP5658463B2 (ja) * | 2009-02-27 | 2015-01-28 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法 |
JP5805461B2 (ja) * | 2010-10-29 | 2015-11-04 | 株式会社日立国際電気 | 基板処理装置および半導体装置の製造方法 |
JP5735304B2 (ja) * | 2010-12-21 | 2015-06-17 | 株式会社日立国際電気 | 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管 |
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KR101504910B1 (ko) | 2015-03-23 |
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JP2012169307A (ja) | 2012-09-06 |
TW201247927A (en) | 2012-12-01 |
TWI496937B (zh) | 2015-08-21 |
CN102634773B (zh) | 2015-04-29 |
US20120199067A1 (en) | 2012-08-09 |
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