KR101402475B1 - 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법 - Google Patents

레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR101402475B1
KR101402475B1 KR1020137001188A KR20137001188A KR101402475B1 KR 101402475 B1 KR101402475 B1 KR 101402475B1 KR 1020137001188 A KR1020137001188 A KR 1020137001188A KR 20137001188 A KR20137001188 A KR 20137001188A KR 101402475 B1 KR101402475 B1 KR 101402475B1
Authority
KR
South Korea
Prior art keywords
laser
laser light
spatial light
light modulator
optical element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020137001188A
Other languages
English (en)
Korean (ko)
Other versions
KR20130012036A (ko
Inventor
마코토 나카노
고지 구노
데츠야 오사지마
다카시 이노우에
마사요시 구마가이
Original Assignee
하마마츠 포토닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 하마마츠 포토닉스 가부시키가이샤 filed Critical 하마마츠 포토닉스 가부시키가이샤
Publication of KR20130012036A publication Critical patent/KR20130012036A/ko
Application granted granted Critical
Publication of KR101402475B1 publication Critical patent/KR101402475B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046Automatically focusing the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/083Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B23K26/0861Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane in at least in three axial directions
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • B23K26/128Laser beam path enclosures
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • B23K26/402Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50Working by transmitting the laser beam through or within the workpiece
    • B23K26/53Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00Severing cooled glass
    • C03B33/02Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222Scoring using a focussed radiation beam, e.g. laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54453Marks applied to semiconductor devices or parts for use prior to dicing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49826Assembling or joining

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
KR1020137001188A 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법 Active KR101402475B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2007-203529 2007-08-03
JP2007203529A JP4402708B2 (ja) 2007-08-03 2007-08-03 レーザ加工方法、レーザ加工装置及びその製造方法
PCT/JP2008/063531 WO2009020004A1 (ja) 2007-08-03 2008-07-28 レーザ加工方法、レーザ加工装置及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127010532A Division KR101302336B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020137026492A Division KR101711247B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20130012036A KR20130012036A (ko) 2013-01-30
KR101402475B1 true KR101402475B1 (ko) 2014-06-05

Family

ID=40341239

Family Applications (7)

Application Number Title Priority Date Filing Date
KR1020137001188A Active KR101402475B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020147017879A Active KR101564523B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020137026492A Active KR101711247B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020107001324A Active KR101013286B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020157007615A Active KR101711311B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020107020140A Active KR101212936B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020127010532A Active KR101302336B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법

Family Applications After (6)

Application Number Title Priority Date Filing Date
KR1020147017879A Active KR101564523B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020137026492A Active KR101711247B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020107001324A Active KR101013286B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020157007615A Active KR101711311B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020107020140A Active KR101212936B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020127010532A Active KR101302336B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법

Country Status (7)

Country Link
US (3) US8134099B2 (enExample)
EP (1) EP2186596B1 (enExample)
JP (1) JP4402708B2 (enExample)
KR (7) KR101402475B1 (enExample)
CN (4) CN101772398B (enExample)
TW (3) TWI573649B (enExample)
WO (1) WO2009020004A1 (enExample)

Families Citing this family (143)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
DE60313900T2 (de) 2002-03-12 2008-01-17 Hamamatsu Photonics K.K., Hamamatsu Methode zur Trennung von Substraten
TWI326626B (en) * 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
AU2003211581A1 (en) 2002-03-12 2003-09-22 Hamamatsu Photonics K.K. Method of cutting processed object
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (fr) * 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
WO2004080643A1 (ja) * 2003-03-12 2004-09-23 Hamamatsu Photonics K.K. レーザ加工方法
EP2332687B1 (en) * 2003-07-18 2015-02-18 Hamamatsu Photonics K.K. Method of laser beam machining a machining target using pulsed laser beam and expanded tape for cutting a machining target
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4601965B2 (ja) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4598407B2 (ja) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
KR101336523B1 (ko) 2004-03-30 2013-12-03 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법 및 반도체 칩
CN101434010B (zh) * 2004-08-06 2011-04-13 浜松光子学株式会社 激光加工方法及半导体装置
JP4762653B2 (ja) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4907965B2 (ja) * 2005-11-25 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法
JP4804911B2 (ja) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 レーザ加工装置
JP4907984B2 (ja) 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
JP5183892B2 (ja) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 レーザ加工方法
US7897487B2 (en) 2006-07-03 2011-03-01 Hamamatsu Photonics K.K. Laser processing method and chip
CN101516566B (zh) * 2006-09-19 2012-05-09 浜松光子学株式会社 激光加工方法和激光加工装置
JP4954653B2 (ja) 2006-09-19 2012-06-20 浜松ホトニクス株式会社 レーザ加工方法
JP5101073B2 (ja) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP5132911B2 (ja) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 レーザ加工方法
JP4964554B2 (ja) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 レーザ加工方法
EP2070636B1 (en) * 2006-10-04 2015-08-05 Hamamatsu Photonics K.K. Laser processing method
JP5336054B2 (ja) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 加工情報供給装置を備える加工情報供給システム
JP4402708B2 (ja) * 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
JP5449665B2 (ja) * 2007-10-30 2014-03-19 浜松ホトニクス株式会社 レーザ加工方法
JP5134928B2 (ja) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
JP5692969B2 (ja) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP5254761B2 (ja) 2008-11-28 2013-08-07 浜松ホトニクス株式会社 レーザ加工装置
JP5241527B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
JP5241525B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
CN102307699B (zh) 2009-02-09 2015-07-15 浜松光子学株式会社 加工对象物的切断方法
JP5639997B2 (ja) 2009-04-07 2014-12-10 浜松ホトニクス株式会社 レーザ加工装置
JP5491761B2 (ja) * 2009-04-20 2014-05-14 浜松ホトニクス株式会社 レーザ加工装置
JP5775265B2 (ja) * 2009-08-03 2015-09-09 浜松ホトニクス株式会社 レーザ加工方法及び半導体装置の製造方法
JP5451238B2 (ja) * 2009-08-03 2014-03-26 浜松ホトニクス株式会社 レーザ加工方法
US8932510B2 (en) 2009-08-28 2015-01-13 Corning Incorporated Methods for laser cutting glass substrates
US8946590B2 (en) 2009-11-30 2015-02-03 Corning Incorporated Methods for laser scribing and separating glass substrates
JP5479925B2 (ja) * 2010-01-27 2014-04-23 浜松ホトニクス株式会社 レーザ加工システム
JP5479924B2 (ja) * 2010-01-27 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
JP5980471B2 (ja) * 2010-02-26 2016-08-31 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いた顕微鏡観察方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP2011201759A (ja) * 2010-03-05 2011-10-13 Namiki Precision Jewel Co Ltd 多層膜付き単結晶基板、多層膜付き単結晶基板の製造方法および素子製造方法
US20120264077A1 (en) * 2011-04-13 2012-10-18 Alan Wong Dental Tools for Photo-Curing of Dental Filings
US8939766B2 (en) * 2010-04-19 2015-01-27 Alan Wong Dental tools for photo-curing of dental fillings
WO2011158617A1 (ja) * 2010-06-14 2011-12-22 三菱電機株式会社 レーザ加工装置、及びレーザ加工方法
JP5597051B2 (ja) * 2010-07-21 2014-10-01 浜松ホトニクス株式会社 レーザ加工方法
JP5597052B2 (ja) * 2010-07-21 2014-10-01 浜松ホトニクス株式会社 レーザ加工方法
EP2599576B1 (en) * 2010-07-26 2019-12-11 Hamamatsu Photonics K.K. Laser processing method
JP2012037572A (ja) 2010-08-03 2012-02-23 Hamamatsu Photonics Kk レーザ光整形及び波面制御用光学系
TWI513670B (zh) 2010-08-31 2015-12-21 Corning Inc 分離強化玻璃基板之方法
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
KR101124347B1 (ko) * 2011-01-25 2012-03-23 주식회사아톤 사각 방향으로 조사되는 스캔된 레이저 빔을 이용한 대상물의 가공 방법 및 그 장치
JP5848877B2 (ja) 2011-02-14 2016-01-27 浜松ホトニクス株式会社 レーザ光整形及び波面制御用光学系
JP2013063454A (ja) * 2011-09-16 2013-04-11 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP5840215B2 (ja) * 2011-09-16 2016-01-06 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP5775811B2 (ja) * 2011-12-26 2015-09-09 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
US10357850B2 (en) * 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
TW201343296A (zh) * 2012-03-16 2013-11-01 Ipg Microsystems Llc 使一工件中具有延伸深度虛飾之雷射切割系統及方法
JP6009225B2 (ja) * 2012-05-29 2016-10-19 浜松ホトニクス株式会社 強化ガラス板の切断方法
US9938180B2 (en) * 2012-06-05 2018-04-10 Corning Incorporated Methods of cutting glass using a laser
US9383597B2 (en) * 2012-09-13 2016-07-05 Hamamatsu Photonics K.K. Optical modulation control method, control program, control device, and laser light irradiation device
TWI606880B (zh) * 2012-09-13 2017-12-01 Hamamatsu Photonics Kk Optical modulation control method, control program, control device, and laser light irradiation device
US9610653B2 (en) 2012-09-21 2017-04-04 Electro Scientific Industries, Inc. Method and apparatus for separation of workpieces and articles produced thereby
JP6036173B2 (ja) * 2012-10-31 2016-11-30 三星ダイヤモンド工業株式会社 レーザー加工装置
JP6121733B2 (ja) 2013-01-31 2017-04-26 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
US9914183B2 (en) 2013-03-27 2018-03-13 Hamamatsu Photonics K.K. Laser machining device and laser machining method
JP6272300B2 (ja) * 2013-03-27 2018-01-31 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
CN105102179B (zh) 2013-03-27 2017-04-26 浜松光子学株式会社 激光加工装置及激光加工方法
KR102226808B1 (ko) 2013-03-27 2021-03-11 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치 및 레이저 가공 방법
ES2959429T3 (es) * 2013-04-04 2024-02-26 Lpkf Laser & Electronics Se Procedimiento para la separación de un sustrato
US9812361B2 (en) * 2013-09-11 2017-11-07 Nxp B.V. Combination grinding after laser (GAL) and laser on-off function to increase die strength
JP6353683B2 (ja) 2014-04-04 2018-07-04 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP6258787B2 (ja) 2014-05-29 2018-01-10 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP6272145B2 (ja) * 2014-05-29 2018-01-31 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
DE102014108259A1 (de) * 2014-06-12 2015-12-17 Scanlab Ag Vorrichtung zur Lasermaterialbearbeitung
JP2016054204A (ja) 2014-09-03 2016-04-14 株式会社ディスコ ウエーハの加工方法
JP2016055319A (ja) 2014-09-10 2016-04-21 浜松ホトニクス株式会社 光照射装置および光照射方法
JP2016072274A (ja) * 2014-09-26 2016-05-09 株式会社ディスコ ウエーハの加工方法
JP6320261B2 (ja) * 2014-09-26 2018-05-09 株式会社ディスコ ウエーハの加工方法
JP6347714B2 (ja) 2014-10-02 2018-06-27 株式会社ディスコ ウエーハの加工方法
JP6632203B2 (ja) * 2014-11-27 2020-01-22 株式会社東京精密 レーザー加工装置及びレーザー加工方法
EP3223994B1 (de) 2014-11-27 2023-04-26 Siltectra GmbH Laserbasiertes trennverfahren
JP6399913B2 (ja) * 2014-12-04 2018-10-03 株式会社ディスコ ウエーハの生成方法
JP6358941B2 (ja) * 2014-12-04 2018-07-18 株式会社ディスコ ウエーハの生成方法
JP2016129202A (ja) 2015-01-09 2016-07-14 株式会社ディスコ ウエーハの加工方法
JP2016129203A (ja) 2015-01-09 2016-07-14 株式会社ディスコ ウエーハの加工方法
DE102015003193A1 (de) * 2015-03-12 2016-09-15 Siltectra Gmbh Vorrichtung und Verfahren zum kontinuierlichen Behandeln eines Festkörpers mittels Laserstrahlen
JP6478821B2 (ja) * 2015-06-05 2019-03-06 株式会社ディスコ ウエーハの生成方法
JP6868024B2 (ja) * 2015-08-14 2021-05-12 レーザー エンジニアリング アプリケーションズ 機械加工装置
KR101825923B1 (ko) * 2015-09-03 2018-03-22 주식회사 이오테크닉스 레이저 가공장치 및 레이저 가공방법
DE102016215473B4 (de) * 2015-09-10 2023-10-26 Disco Corporation Verfahren zum Bearbeiten eines Substrats
JP6531345B2 (ja) * 2015-09-29 2019-06-19 株式会社東京精密 レーザー加工装置及びレーザー加工方法
JP6620976B2 (ja) * 2015-09-29 2019-12-18 株式会社東京精密 レーザー加工装置及びレーザー加工方法
CN105598594A (zh) * 2015-12-18 2016-05-25 中国电子科技集团公司第五十五研究所 一种复合结构SiC芯片的激光分离方法
US9984918B2 (en) * 2015-12-31 2018-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
JP6654435B2 (ja) * 2016-01-07 2020-02-26 株式会社ディスコ ウエーハ生成方法
US10518358B1 (en) 2016-01-28 2019-12-31 AdlOptica Optical Systems GmbH Multi-focus optics
US12202070B2 (en) * 2016-01-28 2025-01-21 Hamamatsu Photonics K.K. Laser machining device and laser output device
DE112017001209T5 (de) * 2016-03-10 2018-12-13 Hamamatsu Photonics K.K. Laserlicht-Bestrahlungsvorrichtung und Laserlicht-Bestrahlungsverfahren
JP6689631B2 (ja) * 2016-03-10 2020-04-28 浜松ホトニクス株式会社 レーザ光照射装置及びレーザ光照射方法
WO2017216603A1 (en) * 2016-06-14 2017-12-21 Evana Technologies, Uab Laser processing method and a system for wafer dicing or cutting by use of a multi-segment focusing lens
JP6768444B2 (ja) * 2016-10-14 2020-10-14 浜松ホトニクス株式会社 レーザ加工装置、及び、動作確認方法
JP6786374B2 (ja) * 2016-12-16 2020-11-18 株式会社スミテック レーザ加工装置及びレーザ加工方法
JP6831253B2 (ja) * 2017-01-27 2021-02-17 株式会社ディスコ レーザー加工装置
KR102356415B1 (ko) * 2017-03-06 2022-02-08 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 전자기 방사선과 후속 에칭공정을 이용해 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법
CN107186364B (zh) * 2017-07-11 2024-02-02 华侨大学 无机械运动实现精确激光切割轨迹和显微细胞切割方法
JP7034621B2 (ja) * 2017-07-25 2022-03-14 浜松ホトニクス株式会社 レーザ加工装置
JP6955932B2 (ja) * 2017-08-25 2021-10-27 株式会社ディスコ レーザービームプロファイラユニット及びレーザー加工装置
JP2019051529A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体製造装置
IT201700114962A1 (it) * 2017-10-12 2019-04-12 Automotive Lighting Italia Spa Attrezzatura di saldatura laser simultanea di un fanale automobilistico e metodo di saldatura laser simultanea di un fanale automobilistico
KR102697771B1 (ko) 2017-11-07 2024-08-23 하마마츠 포토닉스 가부시키가이샤 레이저 가공 방법, 및 레이저 가공 장치
JP7105058B2 (ja) 2017-12-05 2022-07-22 株式会社ディスコ ウェーハの加工方法
JP7088761B2 (ja) * 2018-07-05 2022-06-21 浜松ホトニクス株式会社 レーザ加工装置
JP7105639B2 (ja) 2018-07-05 2022-07-25 浜松ホトニクス株式会社 レーザ加工装置
JP7404336B2 (ja) * 2018-07-25 2023-12-25 ノヴァ リミテッド 材料特性評価のための光学技術
JP7139050B2 (ja) * 2018-08-02 2022-09-20 株式会社ディスコ ウェーハの加工方法
KR102158106B1 (ko) * 2018-09-28 2020-09-21 주식회사 이솔 레이저 가공 방법
JP7319770B2 (ja) * 2018-10-04 2023-08-02 浜松ホトニクス株式会社 撮像装置、レーザ加工装置、及び、撮像方法
US10589445B1 (en) * 2018-10-29 2020-03-17 Semivation, LLC Method of cleaving a single crystal substrate parallel to its active planar surface and method of using the cleaved daughter substrate
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
JP2020163432A (ja) * 2019-03-29 2020-10-08 株式会社東京精密 レーザ加工装置の収差調整方法及び収差制御方法
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP6719074B2 (ja) * 2019-05-21 2020-07-08 株式会社東京精密 レーザー加工領域の確認装置及び確認方法
JP7334065B2 (ja) * 2019-05-28 2023-08-28 株式会社ディスコ チップの製造方法
JP7286464B2 (ja) * 2019-08-02 2023-06-05 株式会社ディスコ レーザー加工装置
JP7303078B2 (ja) * 2019-09-11 2023-07-04 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP7386672B2 (ja) * 2019-11-15 2023-11-27 株式会社ディスコ レーザー加工装置及び位相パターンの調整方法
JP2021089383A (ja) * 2019-12-05 2021-06-10 株式会社ディスコ レーザービーム調整機構およびレーザー加工装置
KR102235761B1 (ko) * 2019-12-31 2021-04-02 한국과학기술원 3d 프린팅 공정의 펨토초 레이저 기반 초음파 계측 장치 및 이를 구비한 3d 프린팅 시스템
EP4100775A1 (en) 2020-02-04 2022-12-14 Fluxus, Inc. Alignment of photonic system components using a reference surface
EP4100200B1 (en) * 2020-02-07 2024-04-03 SALVAGNINI ITALIA S.p.A. Laser cutting head for a machine tool
CN112025088B (zh) * 2020-08-06 2022-04-15 武汉华工激光工程有限责任公司 一种激光光束像散补偿方法及激光加工系统
DE102020123785A1 (de) 2020-09-11 2022-03-17 Trumpf Laser- Und Systemtechnik Gmbh Verfahren zum Bearbeiten eines Materials
CN117412830A (zh) * 2021-06-01 2024-01-16 浜松光子学株式会社 激光加工装置
WO2023101861A2 (en) * 2021-11-30 2023-06-08 Corning Incorporated Systems and methods for fabricating an article with an angled edge using a laser beam focal line
KR20240015188A (ko) 2022-07-26 2024-02-05 주식회사 메디포 소양증 완화 및 피부장벽 회복용 조성물
US20240426654A1 (en) * 2022-09-29 2024-12-26 Ii-Vi Delaware, Inc. Device For Monitoring Properties of A Laser Beam

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0919784A (ja) * 1995-07-03 1997-01-21 Nec Corp レーザパターニング加工装置および加工方法
JP2001228449A (ja) 2000-02-14 2001-08-24 Hamamatsu Photonics Kk レーザ集光装置及びレーザ加工装置
JP2007141995A (ja) 2005-11-16 2007-06-07 Denso Corp 半導体チップの製造方法

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384789A (ja) * 1986-09-26 1988-04-15 Semiconductor Energy Lab Co Ltd 光加工方法
GB8819351D0 (en) * 1988-08-15 1988-09-14 Gersan Anstalt Making elongate cut using high energy radiation
JP3475947B2 (ja) 1991-05-21 2003-12-10 セイコーエプソン株式会社 光学装置
US5619381A (en) * 1995-06-02 1997-04-08 Texas Instruments Incorporated Offset zoom lens for reflective light modulators
US6075656A (en) * 1998-11-09 2000-06-13 Eastman Kodak Company High numerical aperture objective lens
JP2002182174A (ja) 2000-12-14 2002-06-26 Pioneer Electronic Corp 収差補正装置及び方法
JP2002049002A (ja) 2000-08-03 2002-02-15 Hamamatsu Photonics Kk レーザ加工装置
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
US6625181B1 (en) * 2000-10-23 2003-09-23 U.C. Laser Ltd. Method and apparatus for multi-beam laser machining
US6624880B2 (en) * 2001-01-18 2003-09-23 Micronic Laser Systems Ab Method and apparatus for microlithography
JP4880820B2 (ja) * 2001-01-19 2012-02-22 株式会社レーザーシステム レーザ支援加工方法
JP2002273583A (ja) * 2001-03-19 2002-09-25 Inst Of Physical & Chemical Res 透明媒質加工装置
US6717104B2 (en) * 2001-06-13 2004-04-06 The Regents Of The University Of California Programmable phase plate for tool modification in laser machining applications
JP3775250B2 (ja) 2001-07-12 2006-05-17 セイコーエプソン株式会社 レーザー加工方法及びレーザー加工装置
GB0121308D0 (en) * 2001-09-03 2001-10-24 Thomas Swan & Company Ltd Optical processing
WO2003036368A1 (fr) 2001-10-25 2003-05-01 Hamamatsu Photonics K.K. Appareil a modulation de phase et procede de modulation de phase
AU2003211581A1 (en) * 2002-03-12 2003-09-22 Hamamatsu Photonics K.K. Method of cutting processed object
US6995336B2 (en) * 2003-01-29 2006-02-07 The Regents Of The University Of Michigan Method for forming nanoscale features
DE10325867B4 (de) * 2003-06-06 2013-08-01 Eberhard Piehler Projektionsvorrichtung
JP2005019667A (ja) 2003-06-26 2005-01-20 Disco Abrasive Syst Ltd レーザ光線を利用した半導体ウエーハの分割方法
JP2005103630A (ja) * 2003-10-02 2005-04-21 Matsushita Electric Ind Co Ltd レーザ加工装置及びレーザ加工方法
JP2005138143A (ja) * 2003-11-06 2005-06-02 Disco Abrasive Syst Ltd レーザ光線を利用する加工装置
JP2005189434A (ja) 2003-12-25 2005-07-14 Asahi Glass Co Ltd 波面制御素子及び液晶レンズ並びに収差補正素子
JP4456881B2 (ja) 2004-01-28 2010-04-28 株式会社リコー レーザ加工装置
JP4477893B2 (ja) 2004-02-13 2010-06-09 株式会社リコー レーザ加工方法及び装置、並びに、レーザ加工方法を使用した構造体の製造方法
JP2005268752A (ja) * 2004-02-19 2005-09-29 Canon Inc レーザ割断方法、被割断部材および半導体素子チップ
JP4576137B2 (ja) 2004-03-19 2010-11-04 オリンパス株式会社 顕微鏡
JP4536407B2 (ja) 2004-03-30 2010-09-01 浜松ホトニクス株式会社 レーザ加工方法及び加工対象物
JP4531431B2 (ja) 2004-04-02 2010-08-25 浜松ホトニクス株式会社 波面補償装置、波面補償方法、プログラム、及び、記録媒体
TWI348408B (en) 2004-04-28 2011-09-11 Olympus Corp Laser processing device
JP4634089B2 (ja) * 2004-07-30 2011-02-16 浜松ホトニクス株式会社 レーザ加工方法
CN101434010B (zh) * 2004-08-06 2011-04-13 浜松光子学株式会社 激光加工方法及半导体装置
JP2006068762A (ja) 2004-08-31 2006-03-16 Univ Of Tokushima レーザー加工方法およびレーザー加工装置
EP1643284B1 (de) * 2004-09-30 2006-10-18 TRUMPF Laser GmbH + Co. KG Vorrichtung zur Fokussierung eines Laserstrahls
JP4761432B2 (ja) 2004-10-13 2011-08-31 株式会社リコー レーザ加工装置
JP4647965B2 (ja) 2004-10-22 2011-03-09 株式会社リコー レーザ加工方法及びレーザ加工装置及びにこれよって作製された構造体
JP2006131443A (ja) * 2004-11-04 2006-05-25 Shibuya Kogyo Co Ltd 脆性材料の割断方法とその装置
US8093530B2 (en) * 2004-11-19 2012-01-10 Canon Kabushiki Kaisha Laser cutting apparatus and laser cutting method
US7893384B2 (en) * 2004-12-07 2011-02-22 Chosen Technologies, Inc. Systems and methods for laser material manipulation
FR2884743B1 (fr) * 2005-04-20 2007-07-20 Impulsion Soc Par Actions Simp Dispositif de micro-usinage par laser femtoseconde avec conformation dynamique de faisceau
JP4407584B2 (ja) 2005-07-20 2010-02-03 セイコーエプソン株式会社 レーザ照射装置およびレーザスクライブ方法
JP2007029959A (ja) * 2005-07-22 2007-02-08 Olympus Corp レーザ加工機
JP4749799B2 (ja) 2005-08-12 2011-08-17 浜松ホトニクス株式会社 レーザ加工方法
CN100496855C (zh) * 2005-08-19 2009-06-10 中国科学院光电技术研究所 精密加工激光切割机
JPWO2007023940A1 (ja) * 2005-08-26 2009-03-26 パナソニック株式会社 アクチュエータ、光ヘッド装置および光情報装置
DE102006042280A1 (de) * 2005-09-08 2007-06-06 IMRA America, Inc., Ann Arbor Bearbeitung von transparentem Material mit einem Ultrakurzpuls-Laser
JP4867293B2 (ja) 2005-11-04 2012-02-01 セイコーエプソン株式会社 レーザ加工装置
CN1966197B (zh) * 2005-11-18 2010-11-10 鸿富锦精密工业(深圳)有限公司 一种激光加工系统及加工方法
JP2007250598A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置の製造方法
US20070298529A1 (en) * 2006-05-31 2007-12-27 Toyoda Gosei, Co., Ltd. Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
US8731013B2 (en) * 2007-01-24 2014-05-20 Raytheon Company Linear adaptive optics system in low power beam path and method
JP4402708B2 (ja) 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
US20090212030A1 (en) * 2008-02-25 2009-08-27 Optisolar, Inc., A Delaware Corporation Autofocus for Ablation Laser
JP5479924B2 (ja) * 2010-01-27 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0919784A (ja) * 1995-07-03 1997-01-21 Nec Corp レーザパターニング加工装置および加工方法
JP2001228449A (ja) 2000-02-14 2001-08-24 Hamamatsu Photonics Kk レーザ集光装置及びレーザ加工装置
JP2007141995A (ja) 2005-11-16 2007-06-07 Denso Corp 半導体チップの製造方法

Also Published As

Publication number Publication date
KR20120048717A (ko) 2012-05-15
EP2186596B1 (en) 2016-06-08
KR20130114761A (ko) 2013-10-17
WO2009020004A1 (ja) 2009-02-12
KR20100113628A (ko) 2010-10-21
KR101212936B1 (ko) 2012-12-14
US8134099B2 (en) 2012-03-13
TW201311384A (zh) 2013-03-16
CN103706950B (zh) 2016-03-23
CN101772398B (zh) 2014-02-12
TW201323124A (zh) 2013-06-16
JP4402708B2 (ja) 2010-01-20
CN102528294B (zh) 2014-12-10
TW200911433A (en) 2009-03-16
CN103706950A (zh) 2014-04-09
CN102528294A (zh) 2012-07-04
KR20150039875A (ko) 2015-04-13
KR101013286B1 (ko) 2011-02-09
US20160329246A1 (en) 2016-11-10
KR20140092411A (ko) 2014-07-23
JP2009034723A (ja) 2009-02-19
US10622254B2 (en) 2020-04-14
CN101772398A (zh) 2010-07-07
KR101711311B1 (ko) 2017-02-28
EP2186596A1 (en) 2010-05-19
US20110000897A1 (en) 2011-01-06
KR101711247B1 (ko) 2017-02-28
EP2186596A4 (en) 2015-04-15
KR101302336B1 (ko) 2013-08-30
TWI573649B (zh) 2017-03-11
TWI394627B (zh) 2013-05-01
US9428413B2 (en) 2016-08-30
US20120196427A1 (en) 2012-08-02
CN102019508A (zh) 2011-04-20
KR20130012036A (ko) 2013-01-30
KR101564523B1 (ko) 2015-10-29
CN102019508B (zh) 2016-05-18
KR20100044791A (ko) 2010-04-30
TWI595953B (zh) 2017-08-21

Similar Documents

Publication Publication Date Title
KR101402475B1 (ko) 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
JP5148575B2 (ja) レーザ加工方法、及び、レーザ加工装置
KR101549271B1 (ko) 레이저 가공 방법
JP5101073B2 (ja) レーザ加工装置
CN101046571B (zh) 切割基板的方法和使用其的基板切割设备
JP2019527466A (ja) 多分割レンズ及びウェハをダイシングまたは切断するためのレーザー加工システム
KR20110099091A (ko) 레이저 가공장치
JP5255109B2 (ja) レーザ加工方法、レーザ加工装置及びその製造方法
JP5863891B2 (ja) レーザ加工装置、レーザ加工装置の制御方法、レーザ装置の制御方法、及び、レーザ装置の調整方法
JP5575200B2 (ja) レーザ加工装置及びその製造方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20130116

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20130412

Patent event code: PE09021S01D

A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20131007

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20140227

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20140526

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20140526

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20170504

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20170504

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20180503

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20180503

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20190503

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20190503

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20200506

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20210429

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20220418

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20230419

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20240429

Start annual number: 11

End annual number: 11