KR101299255B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101299255B1
KR101299255B1 KR1020137010279A KR20137010279A KR101299255B1 KR 101299255 B1 KR101299255 B1 KR 101299255B1 KR 1020137010279 A KR1020137010279 A KR 1020137010279A KR 20137010279 A KR20137010279 A KR 20137010279A KR 101299255 B1 KR101299255 B1 KR 101299255B1
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layer
oxide semiconductor
metal
electrode layer
oxide
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KR20130047774A (ko
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순페이 야마자키
스즈노스케 히라이시
켄고 아키모토
준이치로 사카타
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020137010279A 2009-11-06 2010-10-19 반도체 장치 Active KR101299255B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009255272 2009-11-06
JPJP-P-2009-255272 2009-11-06
PCT/JP2010/068794 WO2011055645A1 (en) 2009-11-06 2010-10-19 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127014505A Division KR101876470B1 (ko) 2009-11-06 2010-10-19 반도체 장치

Publications (2)

Publication Number Publication Date
KR20130047774A KR20130047774A (ko) 2013-05-08
KR101299255B1 true KR101299255B1 (ko) 2013-08-22

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KR1020137010279A Active KR101299255B1 (ko) 2009-11-06 2010-10-19 반도체 장치
KR1020127014505A Expired - Fee Related KR101876470B1 (ko) 2009-11-06 2010-10-19 반도체 장치
KR1020187018861A Expired - Fee Related KR102066532B1 (ko) 2009-11-06 2010-10-19 반도체 장치

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KR1020187018861A Expired - Fee Related KR102066532B1 (ko) 2009-11-06 2010-10-19 반도체 장치

Country Status (6)

Country Link
US (2) US8841662B2 (enExample)
JP (5) JP5665480B2 (enExample)
KR (3) KR101299255B1 (enExample)
CN (2) CN104465318B (enExample)
TW (3) TWI604614B (enExample)
WO (1) WO2011055645A1 (enExample)

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US8247276B2 (en) * 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
CN102598279B (zh) 2009-11-06 2015-10-07 株式会社半导体能源研究所 半导体装置
KR101945660B1 (ko) 2009-11-20 2019-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR102424181B1 (ko) 2010-12-17 2022-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 재료 및 반도체 장치
US9196741B2 (en) * 2012-02-03 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2014005841A1 (en) * 2012-07-03 2014-01-09 Imec A method for fabricating a thin film transistor
DE112013006219T5 (de) 2012-12-25 2015-09-24 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und deren Herstellungsverfahren
KR102290247B1 (ko) * 2013-03-14 2021-08-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
TWI631711B (zh) * 2013-05-01 2018-08-01 半導體能源研究所股份有限公司 半導體裝置
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CN104282767B (zh) * 2013-07-05 2017-12-12 鸿富锦精密工业（深圳）有限公司 薄膜晶体管及其制造方法
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US20170309852A1 (en) * 2016-04-22 2017-10-26 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Display Device, Electronic Device, and Lighting Device
CN106098559A (zh) * 2016-06-21 2016-11-09 北京大学深圳研究生院 一种底栅共平面型金属氧化物薄膜晶体管的制备方法
KR102589754B1 (ko) 2016-08-05 2023-10-18 삼성디스플레이 주식회사 트랜지스터 및 이를 포함하는 표시 장치
CN106229260A (zh) 2016-08-31 2016-12-14 深圳市华星光电技术有限公司 一种薄膜晶体管及其制造方法
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JP7080968B2 (ja) 2017-08-31 2022-06-06 マイクロン テクノロジー，インク． 半導体デバイス、ハイブリッド・トランジスタおよび関連方法
CN110265548B (zh) * 2019-06-04 2020-12-22 华东师范大学 一种铟掺杂n型有机薄膜晶体管及其制备方法
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