JP2011119692A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2011119692A JP2011119692A JP2010242157A JP2010242157A JP2011119692A JP 2011119692 A JP2011119692 A JP 2011119692A JP 2010242157 A JP2010242157 A JP 2010242157A JP 2010242157 A JP2010242157 A JP 2010242157A JP 2011119692 A JP2011119692 A JP 2011119692A
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- Prior art keywords
- layer
- oxide semiconductor
- electrode layer
- metal
- drain electrode
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Images
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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Abstract
【解決手段】ソース電極層またはドレイン電極層を2層以上の積層構造とし、その積層のうち、酸化物半導体層と接する一層を酸化物半導体層の仕事関数より小さい仕事関数を有する金属又はそのような金属の合金とする。二層目以降のソース電極層またはドレイン電極層の材料は、Al、Cr、Cu、Ta、Ti、Mo、Wから選ばれた元素、または上述した元素を成分とする合金か、上述した元素を組み合わせた合金等を用いる。
【選択図】図1
Description
本実施の形態では、酸化物半導体層とその酸化物半導体層の仕事関数より小さい仕事関数を有する金属又はそのような金属の合金が接した状態の積層構造について説明する。
本実施の形態では、酸化物半導体層とその酸化物半導体層の電子親和力より小さい仕事関数を有する金属又はそのような金属の合金が接した状態の積層構造について説明する。
本実施の形態では、図1(D)に示す薄膜トランジスタ150の作製方法の一形態について、薄膜トランジスタ作製工程の断面図である図1(A)乃至図1(D)を用いて説明する。薄膜トランジスタ150は、ボトムゲート構造の一つである。
本実施の形態では、薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製する場合について説明する。また、駆動回路を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
半導体装置の一形態として電子ペーパーの例を示す。
半導体装置の一形態に相当する発光表示パネル(発光パネルともいう)の外観及び断面について、図7を用いて説明する。図7は、第1の基板上に形成された薄膜トランジスタ及び発光素子を、第2の基板との間にシール材によって封止した、パネルの上面図であり、図7(B)は、図7(A)のH−Iにおける断面図に相当する。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機、太陽電池などが挙げられる。
本明細書に開示する半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図11に示す。
101 ゲート電極層
102 ゲート絶縁層
103 酸化物半導体層
104a、105a ソース電極層
104b、105b ドレイン電極層
107 保護絶縁層
110 チャネル保護層
150 薄膜トランジスタ
160 薄膜トランジスタ
170 薄膜トランジスタ
180 薄膜トランジスタ
Claims (10)
- 酸化物半導体層、ソース電極層、及びドレイン電極層とを有し、前記ソース電極層または前記ドレイン電極層は積層であり、その積層のうち、前記酸化物半導体層と接する一層を前記酸化物半導体層の仕事関数より小さい仕事関数を有する金属又はそのような金属の合金とする半導体装置。
- 酸化物半導体層、ソース電極層、及びドレイン電極層とを有し、前記ソース電極層または前記ドレイン電極層は混合層であり、前記混合層は、前記酸化物半導体層の仕事関数より小さい仕事関数を有する金属又はそのような金属の合金と、耐熱性の高い金属からなり、前記酸化物半導体層と接する領域は前記酸化物半導体層の仕事関数より小さい仕事関数を有する金属又はそのような金属の合金の濃度が前記酸化物半導体層と接していない領域より高いとする半導体装置。
- 酸化物半導体層、ソース電極層、及びドレイン電極層とを有し、前記ソース電極層または前記ドレイン電極層は前記酸化物半導体層の仕事関数より小さい仕事関数を有する金属又はそのような金属の合金とする半導体装置。
- 酸化物半導体層、ソース電極層、及びドレイン電極層とを有し、前記ソース電極層または前記ドレイン電極層は積層であり、その積層のうち、前記酸化物半導体層と接する一層を前記酸化物半導体層の電子親和力より小さい仕事関数を有する金属又はそのような金属の合金とする半導体装置。
- 酸化物半導体層、ソース電極層、及びドレイン電極層とを有し、前記ソース電極層または前記ドレイン電極層は混合層であり、前記混合層は、前記酸化物半導体層の電子親和力より小さい仕事関数を有する金属又はそのような金属の合金と、耐熱性の高い金属からなり、前記酸化物半導体層と接する領域は前記酸化物半導体層の電子親和力より小さい仕事関数を有する金属又はそのような金属の合金の濃度分布が前記酸化物半導体層と接していない領域より高いとする半導体装置。
- 酸化物半導体層、ソース電極層、及びドレイン電極層とを有し、前記ソース電極層または前記ドレイン電極層は前記酸化物半導体層の電子親和力より小さい仕事関数を有する金属又はそのような金属の合金とする半導体装置。
- 請求項1乃至請求項6のいずれか一において、前記ソース電極層または前記ドレイン電極層は、インジウムを含み、前記酸化物半導体層は、酸化インジウムを含むことを特徴とする半導体装置。
- 請求項1乃至請求項6のいずれか一において、前記ソース電極層または前記ドレイン電極層は、亜鉛を含み、前記酸化物半導体層は、酸化亜鉛を含むことを特徴とする半導体装置。
- 請求項1乃至請求項6のいずれか一において、前記ソース電極層または前記ドレイン電極層は、イットリウムを含むことを特徴とする半導体装置。
- 請求項1乃至請求項3のいずれか一において、前記ソース電極層または前記ドレイン電極層は、チタンを含み、前記酸化物半導体層は、酸化インジウムを含むことを特徴とする半導体装置。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9941324B2 (en) | 2015-04-28 | 2018-04-10 | Nlt Technologies, Ltd. | Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus |
JP2018137475A (ja) * | 2013-03-14 | 2018-08-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8247276B2 (en) | 2009-02-20 | 2012-08-21 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, method for manufacturing the same, and semiconductor device |
CN102598279B (zh) | 2009-11-06 | 2015-10-07 | 株式会社半导体能源研究所 | 半导体装置 |
KR101945660B1 (ko) | 2009-11-20 | 2019-02-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 트랜지스터 |
CN103250256B (zh) | 2010-12-17 | 2017-04-19 | 株式会社半导体能源研究所 | 氧化物材料及半导体器件 |
US9196741B2 (en) * | 2012-02-03 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2014005841A1 (en) * | 2012-07-03 | 2014-01-09 | Imec | A method for fabricating a thin film transistor |
WO2014103901A1 (en) | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI631711B (zh) * | 2013-05-01 | 2018-08-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
TWI513004B (zh) * | 2013-07-04 | 2015-12-11 | Ye Xin Technology Consulting Co Ltd | 薄膜電晶體及其製造方法 |
CN104282767B (zh) * | 2013-07-05 | 2017-12-12 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管及其制造方法 |
US10108686B2 (en) | 2014-02-19 | 2018-10-23 | Snowflake Computing Inc. | Implementation of semi-structured data as a first-class database element |
CN104934330A (zh) * | 2015-05-08 | 2015-09-23 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制备方法、阵列基板和显示面板 |
CN105405768A (zh) * | 2015-12-14 | 2016-03-16 | 华南理工大学 | 一种薄膜晶体管及其制备方法 |
US20170309852A1 (en) * | 2016-04-22 | 2017-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-Emitting Element, Display Device, Electronic Device, and Lighting Device |
CN106098559A (zh) * | 2016-06-21 | 2016-11-09 | 北京大学深圳研究生院 | 一种底栅共平面型金属氧化物薄膜晶体管的制备方法 |
KR102589754B1 (ko) | 2016-08-05 | 2023-10-18 | 삼성디스플레이 주식회사 | 트랜지스터 및 이를 포함하는 표시 장치 |
CN106229260A (zh) * | 2016-08-31 | 2016-12-14 | 深圳市华星光电技术有限公司 | 一种薄膜晶体管及其制造方法 |
EP3435045B1 (en) * | 2017-07-27 | 2023-12-13 | ams AG | Optical sensor package |
US10943953B2 (en) | 2017-08-31 | 2021-03-09 | Micron Technology, Inc. | Semiconductor devices, hybrid transistors, and related methods |
JP7124059B2 (ja) | 2017-08-31 | 2022-08-23 | マイクロン テクノロジー,インク. | 半導体デバイス、トランジスタ、および金属酸化物半導体デバイスを接触させるための関連する方法 |
CN110265548B (zh) * | 2019-06-04 | 2020-12-22 | 华东师范大学 | 一种铟掺杂n型有机薄膜晶体管及其制备方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002026335A (ja) * | 2000-07-13 | 2002-01-25 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法 |
US20020109797A1 (en) * | 2001-02-12 | 2002-08-15 | Woo-Suk Chung | TFT LCD device having multi-layered pixel electrodes |
JP2007073702A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 半導体素子 |
WO2008133456A1 (en) * | 2007-04-25 | 2008-11-06 | Lg Chem, Ltd. | Thin film transistor and method for preparing the same |
JP2009117619A (ja) * | 2007-11-06 | 2009-05-28 | Idemitsu Kosan Co Ltd | 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ |
US20090184315A1 (en) * | 2008-01-18 | 2009-07-23 | Je-Hun Lee | Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same |
US20090261325A1 (en) * | 2008-04-16 | 2009-10-22 | Tetsufumi Kawamura | Semiconductor device and method for manufacturing the same |
Family Cites Families (176)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPS61201772A (ja) | 1985-03-04 | 1986-09-06 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜形成方法および装置 |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH03255632A (ja) | 1990-03-05 | 1991-11-14 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
US6596091B1 (en) * | 1998-04-29 | 2003-07-22 | Applied Materials, Inc. | Method for sweeping contaminants from a process chamber |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
JP2001077050A (ja) | 1999-08-31 | 2001-03-23 | Toshiba Corp | 半導体装置の製造方法 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
US6303479B1 (en) * | 1999-12-16 | 2001-10-16 | Spinnaker Semiconductor, Inc. | Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts |
US6242288B1 (en) * | 2000-05-05 | 2001-06-05 | International Rectifier Corp. | Anneal-free process for forming weak collector |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP2002305150A (ja) * | 2001-04-04 | 2002-10-18 | Hitachi Kokusai Electric Inc | 成膜方法及びその装置 |
JP4920140B2 (ja) | 2001-05-18 | 2012-04-18 | ゲットナー・ファンデーション・エルエルシー | 液晶表示装置及びその製造方法 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
US7061014B2 (en) | 2001-11-05 | 2006-06-13 | Japan Science And Technology Agency | Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP2003172949A (ja) * | 2001-12-06 | 2003-06-20 | Toshiba Corp | 表示装置用アレイ基板の製造方法 |
KR100980008B1 (ko) | 2002-01-02 | 2010-09-03 | 삼성전자주식회사 | 배선 구조, 이를 이용하는 박막 트랜지스터 기판 및 그제조 방법 |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
KR100938885B1 (ko) | 2003-06-30 | 2010-01-27 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
CN102867855B (zh) | 2004-03-12 | 2015-07-15 | 独立行政法人科学技术振兴机构 | 薄膜晶体管及其制造方法 |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
JP4670034B2 (ja) * | 2004-03-12 | 2011-04-13 | 学校法人早稲田大学 | 電極を備えたGa2O3系半導体層 |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP4660124B2 (ja) | 2004-06-17 | 2011-03-30 | カシオ計算機株式会社 | 薄膜トランジスタの製造方法 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
WO2006051994A2 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Light-emitting device |
KR100889796B1 (ko) | 2004-11-10 | 2009-03-20 | 캐논 가부시끼가이샤 | 비정질 산화물을 사용한 전계 효과 트랜지스터 |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
CA2708335A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Amorphous oxide and field effect transistor |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
TWI445178B (zh) | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5058469B2 (ja) | 2005-09-06 | 2012-10-24 | キヤノン株式会社 | スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
EP1998374A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
JP5078246B2 (ja) * | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
JP5064747B2 (ja) | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
JP5085859B2 (ja) | 2005-10-28 | 2012-11-28 | 株式会社ジャパンディスプレイイースト | 画像表示装置及びその製造方法 |
JP4793679B2 (ja) * | 2005-11-10 | 2011-10-12 | 富士電機株式会社 | 薄膜トランジスタ |
CN101577281B (zh) | 2005-11-15 | 2012-01-11 | 株式会社半导体能源研究所 | 有源矩阵显示器及包含该显示器的电视机 |
JP5250929B2 (ja) | 2005-11-30 | 2013-07-31 | 凸版印刷株式会社 | トランジスタおよびその製造方法 |
JP2007150156A (ja) * | 2005-11-30 | 2007-06-14 | Toppan Printing Co Ltd | トランジスタおよびその製造方法 |
JP2007157916A (ja) | 2005-12-02 | 2007-06-21 | Idemitsu Kosan Co Ltd | Tft基板及びtft基板の製造方法 |
JP5200322B2 (ja) | 2005-12-07 | 2013-06-05 | 凸版印刷株式会社 | 半導体デバイスおよびその製造方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
KR101206033B1 (ko) | 2006-04-18 | 2012-11-28 | 삼성전자주식회사 | ZnO 반도체 박막의 제조방법 및 이를 이용한박막트랜지스터 및 그 제조방법 |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
US7501295B2 (en) * | 2006-05-25 | 2009-03-10 | Philips Lumileds Lighting Company, Llc | Method of fabricating a reflective electrode for a semiconductor light emitting device |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
US8222076B2 (en) | 2006-08-02 | 2012-07-17 | Xerox Corporation | Fabricating amorphous zinc oxide semiconductor layer |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
JP5116290B2 (ja) * | 2006-11-21 | 2013-01-09 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
US8129714B2 (en) * | 2007-02-16 | 2012-03-06 | Idemitsu Kosan Co., Ltd. | Semiconductor, semiconductor device, complementary transistor circuit device |
WO2008105347A1 (en) | 2007-02-20 | 2008-09-04 | Canon Kabushiki Kaisha | Thin-film transistor fabrication process and display device |
JP2008235871A (ja) | 2007-02-20 | 2008-10-02 | Canon Inc | 薄膜トランジスタの形成方法及び表示装置 |
US8436349B2 (en) | 2007-02-20 | 2013-05-07 | Canon Kabushiki Kaisha | Thin-film transistor fabrication process and display device |
JP5196870B2 (ja) | 2007-05-23 | 2013-05-15 | キヤノン株式会社 | 酸化物半導体を用いた電子素子及びその製造方法 |
KR100858088B1 (ko) | 2007-02-28 | 2008-09-10 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법 |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
JP2008235607A (ja) * | 2007-03-20 | 2008-10-02 | Seiko Epson Corp | 薄膜トランジスタ、配線基板、表示装置および電子機器 |
JP5320746B2 (ja) | 2007-03-28 | 2013-10-23 | 凸版印刷株式会社 | 薄膜トランジスタ |
WO2008126879A1 (en) | 2007-04-09 | 2008-10-23 | Canon Kabushiki Kaisha | Light-emitting apparatus and production method thereof |
JP5197058B2 (ja) * | 2007-04-09 | 2013-05-15 | キヤノン株式会社 | 発光装置とその作製方法 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
KR101415561B1 (ko) | 2007-06-14 | 2014-08-07 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
JP2009071289A (ja) | 2007-08-17 | 2009-04-02 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JPWO2009034953A1 (ja) * | 2007-09-10 | 2010-12-24 | 出光興産株式会社 | 薄膜トランジスタ |
JP4759598B2 (ja) | 2007-09-28 | 2011-08-31 | キヤノン株式会社 | 薄膜トランジスタ、その製造方法及びそれを用いた表示装置 |
JP2009099847A (ja) | 2007-10-18 | 2009-05-07 | Canon Inc | 薄膜トランジスタとその製造方法及び表示装置 |
JP5380037B2 (ja) | 2007-10-23 | 2014-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2009123957A (ja) * | 2007-11-15 | 2009-06-04 | Sumitomo Chemical Co Ltd | 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ |
KR101270174B1 (ko) * | 2007-12-03 | 2013-05-31 | 삼성전자주식회사 | 산화물 반도체 박막 트랜지스터의 제조방법 |
JP5213421B2 (ja) | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 酸化物半導体薄膜トランジスタ |
JPWO2009075281A1 (ja) | 2007-12-13 | 2011-04-28 | 出光興産株式会社 | 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法 |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
US8461583B2 (en) | 2007-12-25 | 2013-06-11 | Idemitsu Kosan Co., Ltd. | Oxide semiconductor field effect transistor and method for manufacturing the same |
JP5644111B2 (ja) | 2007-12-26 | 2014-12-24 | コニカミノルタ株式会社 | 金属酸化物半導体およびその製造方法、半導体素子、薄膜トランジスタ |
WO2009084537A1 (ja) | 2007-12-27 | 2009-07-09 | Nippon Mining & Metals Co., Ltd. | a-IGZO酸化物薄膜の製造方法 |
KR101513601B1 (ko) * | 2008-03-07 | 2015-04-21 | 삼성전자주식회사 | 트랜지스터 |
DE112009000498T5 (de) | 2008-03-07 | 2011-02-24 | National University Corporation Tohoku University, Sendai | Photoelektrische Wandlerelementstruktur und Solarzelle |
JP5467728B2 (ja) | 2008-03-14 | 2014-04-09 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよびその製造方法 |
TWI834207B (zh) | 2008-07-31 | 2024-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
US9666719B2 (en) | 2008-07-31 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9082857B2 (en) * | 2008-09-01 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising an oxide semiconductor layer |
KR101681483B1 (ko) * | 2008-09-12 | 2016-12-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101812935B1 (ko) | 2008-09-12 | 2018-01-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 디스플레이 장치 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
CN101740631B (zh) * | 2008-11-07 | 2014-07-16 | 株式会社半导体能源研究所 | 半导体装置及该半导体装置的制造方法 |
TWI549198B (zh) | 2008-12-26 | 2016-09-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8330156B2 (en) | 2008-12-26 | 2012-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with a plurality of oxide clusters over the gate insulating layer |
JP4752925B2 (ja) | 2009-02-04 | 2011-08-17 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
JP5612830B2 (ja) * | 2009-05-18 | 2014-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR101900653B1 (ko) | 2009-07-10 | 2018-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101739154B1 (ko) | 2009-07-17 | 2017-05-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
WO2011010545A1 (en) | 2009-07-18 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2011010542A1 (en) | 2009-07-23 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI559501B (zh) | 2009-08-07 | 2016-11-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
EP2284891B1 (en) | 2009-08-07 | 2019-07-24 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device and manufacturing method thereof |
TWI596741B (zh) | 2009-08-07 | 2017-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置和其製造方法 |
KR102389975B1 (ko) | 2009-09-04 | 2022-04-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
WO2011027676A1 (en) | 2009-09-04 | 2011-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101707260B1 (ko) | 2009-09-24 | 2017-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
WO2011043162A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
KR101754701B1 (ko) | 2009-10-09 | 2017-07-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 제조하기 위한 방법 |
WO2011043164A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the semiconductor device |
CN102598279B (zh) | 2009-11-06 | 2015-10-07 | 株式会社半导体能源研究所 | 半导体装置 |
-
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Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002026335A (ja) * | 2000-07-13 | 2002-01-25 | Fujitsu Ltd | 薄膜トランジスタ及びその製造方法 |
US20020109797A1 (en) * | 2001-02-12 | 2002-08-15 | Woo-Suk Chung | TFT LCD device having multi-layered pixel electrodes |
JP2002258325A (ja) * | 2001-02-12 | 2002-09-11 | Samsung Electronics Co Ltd | 薄膜トランジスタ液晶表示装置 |
JP2007073702A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | 半導体素子 |
WO2008133456A1 (en) * | 2007-04-25 | 2008-11-06 | Lg Chem, Ltd. | Thin film transistor and method for preparing the same |
US20100090215A1 (en) * | 2007-04-25 | 2010-04-15 | Jung-Hyoung Lee | Thin film transistor and method for preparing the same |
JP2010525602A (ja) * | 2007-04-25 | 2010-07-22 | エルジー・ケム・リミテッド | 薄膜トランジスタおよびその製造方法 |
JP2009117619A (ja) * | 2007-11-06 | 2009-05-28 | Idemitsu Kosan Co Ltd | 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ |
US20090184315A1 (en) * | 2008-01-18 | 2009-07-23 | Je-Hun Lee | Thin film transistor array substrate having improved electrical characteristics and method of manufacturing the same |
US20090261325A1 (en) * | 2008-04-16 | 2009-10-22 | Tetsufumi Kawamura | Semiconductor device and method for manufacturing the same |
JP2009260002A (ja) * | 2008-04-16 | 2009-11-05 | Hitachi Ltd | 半導体装置及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018137475A (ja) * | 2013-03-14 | 2018-08-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US9941324B2 (en) | 2015-04-28 | 2018-04-10 | Nlt Technologies, Ltd. | Semiconductor device, method of manufacturing semiconductor device, photodiode array, and imaging apparatus |
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KR102066532B1 (ko) | 2020-01-15 |
JP2016157961A (ja) | 2016-09-01 |
US20150093853A1 (en) | 2015-04-02 |
KR101876470B1 (ko) | 2018-07-10 |
JP5665480B2 (ja) | 2015-02-04 |
TW201135932A (en) | 2011-10-16 |
KR20130047774A (ko) | 2013-05-08 |
JP2012253366A (ja) | 2012-12-20 |
US8841662B2 (en) | 2014-09-23 |
TWI595655B (zh) | 2017-08-11 |
CN104465318A (zh) | 2015-03-25 |
CN102598284A (zh) | 2012-07-18 |
KR101299255B1 (ko) | 2013-08-22 |
JP6306754B2 (ja) | 2018-04-04 |
KR20180080363A (ko) | 2018-07-11 |
TW201611296A (zh) | 2016-03-16 |
TWI647849B (zh) | 2019-01-11 |
CN102598284B (zh) | 2015-04-15 |
TW201804619A (zh) | 2018-02-01 |
JP5917669B2 (ja) | 2016-05-18 |
JP6081002B2 (ja) | 2017-02-15 |
KR20120102682A (ko) | 2012-09-18 |
JP2017063238A (ja) | 2017-03-30 |
CN104465318B (zh) | 2018-04-24 |
JP2015092589A (ja) | 2015-05-14 |
US20110108833A1 (en) | 2011-05-12 |
WO2011055645A1 (en) | 2011-05-12 |
US10002949B2 (en) | 2018-06-19 |
JP5106698B2 (ja) | 2012-12-26 |
TWI604614B (zh) | 2017-11-01 |
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