JP5665480B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5665480B2
JP5665480B2 JP2010242157A JP2010242157A JP5665480B2 JP 5665480 B2 JP5665480 B2 JP 5665480B2 JP 2010242157 A JP2010242157 A JP 2010242157A JP 2010242157 A JP2010242157 A JP 2010242157A JP 5665480 B2 JP5665480 B2 JP 5665480B2
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Prior art keywords
layer
oxide semiconductor
metal
electrode layer
thin film
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JP2010242157A
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Japanese (ja)
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JP2011119692A5 (enExample
JP2011119692A (ja
Inventor
山崎　舜平
舜平 山崎
鈴之介 平石
鈴之介 平石
秋元　健吾
健吾 秋元
坂田　淳一郎
淳一郎 坂田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010242157A priority Critical patent/JP5665480B2/ja
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Publication of JP2011119692A5 publication Critical patent/JP2011119692A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2010242157A 2009-11-06 2010-10-28 半導体装置 Active JP5665480B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010242157A JP5665480B2 (ja) 2009-11-06 2010-10-28 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009255272 2009-11-06
JP2009255272 2009-11-06
JP2010242157A JP5665480B2 (ja) 2009-11-06 2010-10-28 半導体装置

Related Child Applications (2)

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JP2012158210A Division JP5106698B2 (ja) 2009-11-06 2012-07-16 半導体装置
JP2014248625A Division JP5917669B2 (ja) 2009-11-06 2014-12-09 半導体装置及び半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2011119692A JP2011119692A (ja) 2011-06-16
JP2011119692A5 JP2011119692A5 (enExample) 2013-11-14
JP5665480B2 true JP5665480B2 (ja) 2015-02-04

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JP2010242157A Active JP5665480B2 (ja) 2009-11-06 2010-10-28 半導体装置
JP2012158210A Active JP5106698B2 (ja) 2009-11-06 2012-07-16 半導体装置
JP2014248625A Active JP5917669B2 (ja) 2009-11-06 2014-12-09 半導体装置及び半導体装置の作製方法
JP2016071293A Active JP6081002B2 (ja) 2009-11-06 2016-03-31 半導体装置、及び、半導体装置の作製方法
JP2017005932A Expired - Fee Related JP6306754B2 (ja) 2009-11-06 2017-01-17 半導体装置の作製方法

Family Applications After (4)

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JP2012158210A Active JP5106698B2 (ja) 2009-11-06 2012-07-16 半導体装置
JP2014248625A Active JP5917669B2 (ja) 2009-11-06 2014-12-09 半導体装置及び半導体装置の作製方法
JP2016071293A Active JP6081002B2 (ja) 2009-11-06 2016-03-31 半導体装置、及び、半導体装置の作製方法
JP2017005932A Expired - Fee Related JP6306754B2 (ja) 2009-11-06 2017-01-17 半導体装置の作製方法

Country Status (6)

Country Link
US (2) US8841662B2 (enExample)
JP (5) JP5665480B2 (enExample)
KR (3) KR101299255B1 (enExample)
CN (2) CN102598284B (enExample)
TW (3) TWI595655B (enExample)
WO (1) WO2011055645A1 (enExample)

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WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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TW201135932A (en) 2011-10-16
US10002949B2 (en) 2018-06-19
CN104465318A (zh) 2015-03-25
JP2012253366A (ja) 2012-12-20
JP6306754B2 (ja) 2018-04-04
US20150093853A1 (en) 2015-04-02
JP2017063238A (ja) 2017-03-30
KR101299255B1 (ko) 2013-08-22
TW201611296A (zh) 2016-03-16
JP2011119692A (ja) 2011-06-16

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