CN106229260A - 一种薄膜晶体管及其制造方法 - Google Patents

一种薄膜晶体管及其制造方法 Download PDF

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CN106229260A
CN106229260A CN201610793911.3A CN201610793911A CN106229260A CN 106229260 A CN106229260 A CN 106229260A CN 201610793911 A CN201610793911 A CN 201610793911A CN 106229260 A CN106229260 A CN 106229260A
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tft
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石龙强
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to PCT/CN2017/070829 priority patent/WO2018040475A1/zh
Priority to US15/328,945 priority patent/US10367066B2/en
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Abstract

本发明提出了一种薄膜晶体管及其制造方法，所述薄膜晶体管的源极和漏极分别由第一金属层、第二金属层、第三金属层，第一金属层与铟镓锌氧化物层相接触，在第一金属层和铟镓锌氧化物层接触面处设置有金属扩散层。本发明同时提出了该薄膜晶体管的制造方法，依次沉积得到第一金属层、第二金属层、第三金属层，基于CVD方式沉积得到PV层，对PV层进行高温退火处理，使得第一金属层中的金属扩散到铟镓锌氧化物层形成金属扩散层，该金属扩散层使得第一金属层和铟镓锌氧化物层形成欧姆接触，使得界面的空乏区变窄，电子有更多的机会直穿隧。

Description

一种薄膜晶体管及其制造方法
技术领域
本发明涉及显示技术领域，尤其涉及一种薄膜晶体管及其制造方法。
背景技术
IGZO是铟镓锌氧化物(indium gallium zinc oxide)的缩写，非晶IGZO材料是用于新一代薄膜晶体管技术中的沟道层材料，它是一种薄膜电晶体技术，是指在TFT-LCD主动层之上，打上一层金属氧化物。简单说，其实IGZO只是沟道层材料，而并不是一种新的面板技术，和IPS、SVA、OLED并不是一个层级的概念，总得来说IGZO还在TFT-LCD的范畴之内。IGZO材料由日本东京工业大学细野秀雄最先提出并在TFT行业中应用，IGZO-TFT技术最先在日本夏普公司实现大量生产。
TFT(Thin Film Transistor)是指薄膜晶体管，TFT位于液晶面板的下方玻璃基板中的像素驱动模组中，其形态为薄膜状，与像素元件一起嵌入在这个驱动模组当中。TFT液晶屏幕就是指液晶面板上的每一液晶象素点都是由集成在其后的薄膜晶体管来驱动。通常而言，TFT的特征与半导体电晶体基本相同，其驱动电流对像素电容充电，并点亮像素的电器转换装置，而IGZO材料则使用在TFT上。
如图2，金属和IGZO相接触时，在界面处半导体能带弯曲，形成势垒。势垒的存在会导致大的界面电阻，使得源极3、漏极4分别与IGZO层4形成肖特基二极管(Schottky)接触。Schottky电阻会导致TFT元件开态电流不足，亚阈值摆幅(Subthreshold Swing，SS)过大，元件稳定性下降，从而会影响画面显示品质。
所以，降低金属和IGZO的接触电阻，形成欧姆接触，是决定半导体元件性能好坏的一个重要因素。良好的欧姆接触形成的方法之一是在与金属接触的半导体区域进行N型掺杂(n+IGZO)，使得界面的空乏区变窄，电子有更多的机会直穿隧(穿隧效应)。
现有的N+IGZO(即N型掺杂)的方法都是采用掺杂，即在IGZO做完之后，对IGZO进行重金属或者H+等的注入；这样做工艺复杂，时间长，大大增加了生产成本。
发明内容
本发明所要解决的技术问题是降低金属和IGZO的接触电阻，形成欧姆接触，为了解决该技术问题，本申请提出了一种薄膜晶体管及其制造方法。
本发明提出的薄膜晶体管，由内向外依次设置栅极层、栅绝缘层、铟镓锌氧化物层、源极和漏极，其特征在于，在源极和漏极分别由内向外依次设置有第一金属层、第二金属层和第三金属层，其中，所述第一金属层与铟镓锌氧化物层接触。
源极和漏极分别采用三个金属层，第一个金属层在与铟镓锌氧化物层接触面处会扩散到铟镓锌氧化物层中，降低源极、漏极与铟镓锌氧化物层的接触电阻。
进一步，所述的第一金属层为金属铟(In)，第二金属层为金属钼(Mo)或钛(Ti)中的一种，第三金属层为金属铜或铝中的一种。
由于第一金属层为金属铟，铟是一种银灰色，质地极软的易熔金属，熔点156.61℃，具有高导电性，所以在制作过程中，铟更容易扩散到铟镓锌氧化物层中，降低第一金属层与铟镓锌氧化物层的接触电阻。
进一步，在所述源极、所述漏极和所述铟镓锌氧化物层的上方设置有钝化层。
进一步，所述钝化层为氧化硅薄膜。
进一步，所述铟镓锌氧化物层与所述第一金属层接触处有金属扩散层，金属扩散层使得源极、漏极与铟镓锌氧化物层之间的接触电阻降低，达到欧姆接触。
本发明提出的薄膜晶体管制作方法，包括以下步骤：
步骤一、在基板上依次制作栅极层、栅绝缘层和铟镓锌氧化物层；
步骤二、在上一步基础上制作源极和漏极，在栅绝缘层和铟镓锌氧化物层的上部分别依次制作第一金属层、第二金属层和第三金属层；
步骤三、在上一步基础上制作钝化(PV)层；
步骤四、在上一步基础上对钝化层进行高温退火处理，第一金属层中的金属铟扩散到铟镓锌氧化物层形成金属扩散层，使得铟镓锌氧化物层与源极和漏极接触界面形成欧姆接触。
步骤四中采用高温退火，不仅消除了制作过程中产生的内应力，更重要的是高温使得与铟镓锌氧化物层接触的第一金属层中的金属铟融化扩散到铟镓锌氧化物层中，从而使第一金属层与铟镓锌氧化物层之间形成欧姆接触。
进一步，所述源极和所述漏极分别设置有第一金属层、第二金属层和第三金属层，所述的第一金属层为金属铟，第二金属层为金属钼或钛中的一种，第三金属层为金属铜或铝中的一种。
进一步，所述第一金属层、所述第二金属层和所述第三金属层是通过物理气相沉积方式依次沉积得到。
进一步，在第一金属层、第二金属层和第三金属层进行沉积后，进行黄光制程，刻蚀得到所述薄膜晶体管结构。
进一步，所述钝化层通过化学气相沉积方式沉积氧化硅薄膜得到。
本发明与现有技术相比，具有如下优势：
本发明在源极和漏极采用第一金属层、第二金属层和第三金属层的结构，第一金属层为金属In层，第二金属层为金属Mo或Ti层，第三金属层为金属Cu或Al层，其中，第一金属层为底层，即与IGZO层接触层。IGZO中In元素起到导电作用，In含量的增加会导致IGZO变成N+IGZO区域。本发明源漏极的部分In在后续加热的制程中会扩散到IGZO中，形成N+IGZO从而形成欧姆接触。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1显示了本发明薄膜晶体管制造方法的流程图。
图2显示了金属和铟镓锌氧化物层形成肖特基二极管接触的示意图。
图3显示了本发明的薄膜晶体管结构示意图。
图4显示了实施例一中步骤二得到的结构示意图。
图5显示了实施例一中步骤三得到的的结构示意图。
具体实施方式
下面将结合附图对本发明作进一步说明。
图3为本发明的薄膜晶体管结构图，由内向外依次设置栅极层6、栅绝缘层5、铟镓锌氧化物层4、源极和漏极，在源极和漏极分别由内向外依次设置有第一金属层13、第二金属层12和第三金属层11，其中，所述第一金属层13与铟镓锌氧化物层4接触。
进一步改进，所述的第一金属层13为金属铟，第二金属层12为金属钼或钛中的一种，第三金属层11为金属铜或铝中的一种。
进一步改进，在所述源极、所述漏极和所述铟镓锌氧化物层4的上方设置有钝化层10，所述钝化层为氧化硅薄膜。
进一步改进，所述铟镓锌氧化物层4与所述第一金属层13接触处有金属扩散层8。
为了得到本发明的薄膜晶体管结构，图4和图5，详细说明其制造方法，具体步骤如下：
步骤一、在基板7上依据现有技术依次制作栅极层6、栅绝缘层5和铟镓锌氧化物层4。
步骤二、在步骤一基础上制作源极和漏极层，在栅绝缘层5和铟镓锌氧化物层4的上部通过物理气相沉积方式依次沉积第一金属层13、第二金属层12和第三金属层11，得到如图4的结构，其中，所述的第一金属层13为金属铟，第二金属层12为金属钼或钛中的一种，第三金属层11为金属铜或铝中的一种。
步骤三、在步骤二基础上通过化学气相沉积方法沉积制作钝化层10，所述钝化层10为氧化硅薄膜，进一步得到如图5的结构。
步骤四、在步骤三基础上对钝化层10进行高温退火处理，第一金属层13中的铟扩散到铟镓锌氧化物层4形成金属扩散层8，使得铟镓锌氧化物层4与源极和漏极接触界面形成欧姆接触，得到如图3所示的薄膜晶体管。
进一步说明，所述源极和所述漏极分别设置有第一金属层13、第二金属层12和第三金属层11。
进一步说明，在第一金属层13、第二金属层12和第三金属层11进行沉积后，进行黄光制程，刻蚀得到所述薄膜晶体管结构，如图5所示。
虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例，可以对示例性的实施例进行许多修改，只要不偏离所附权利要求所限定的本发明的精神和范围，均在本发明的权利要求保护范围之内。

Claims (10)

1.一种薄膜晶体管，由内向外依次设置栅极层(6)、栅绝缘层(5)、铟镓锌氧化物层(4)、源极和漏极，其特征在于，在源极和漏极分别由内向外依次设置有第一金属层(13)、第二金属层(12)和第三金属层(11)，其中，所述第一金属层(13)与所述铟镓锌氧化物层(4)接触。
2.根据权利要求1所述的薄膜晶体管，其特征在于，所述的第一金属层(13)为金属铟，第二金属层(12)为金属钼或钛中的一种，第三金属层(11)为金属铜或铝中的一种。
3.根据权利要求1所述的薄膜晶体管，其特征在于，在所述源极、所述漏极和所述铟镓锌氧化物层(4)的上方设置有钝化层(10)。
4.根据权利要求3所述的薄膜晶体管，其特征在于，所述钝化层(10)为氧化硅膜。
5.根据权利要求1所述的薄膜晶体管，其特征在于，所述铟镓锌氧化物层(4)与所述第一金属层(13)接触处设置有金属扩散层(8)。
6.根据权利要求1～5任一所述薄膜晶体管的制造方法，其特征在于，包括以下步骤：
步骤一、在基板(7)上依次制作栅极层(6)、栅绝缘层(5)和铟镓锌氧化物层(4)；
步骤二、在步骤一基础上制作源极和漏极，在栅绝缘层(5)和铟镓锌氧化物层(4)的上部分别依次制作第一金属层(13)、第二金属层(12)和第三金属层(11)；
步骤三、在步骤二基础上制作钝化层；
步骤四、在步骤三基础上对钝化层进行高温退火处理，第一金属层(13)中的铟扩散到铟镓锌氧化物层(4)形成金属扩散层(8)，使得铟镓锌氧化物层(4)与源极和漏极接触界面形成欧姆接触。
7.根据权利要求6所述的薄膜晶体管的制造方法，其特征在于，所述源极和所述漏极分别设置有第一金属层(13)、第二金属层(12)和第三金属层(11)，所述的第一金属层(13)为金属铟，第二金属层(12)为金属钼或钛中的一种，第三金属层(11)为金属铜或铝中的一种。
8.根据权利要求6所述的薄膜晶体管的制造方法，其特征在于，所述第一金属层(13)、所述第二金属层(12)和所述第三金属层(11)是通过物理气相沉积方式依次沉积得到。
9.根据权利要求8所述的薄膜晶体管的制造方法，其特征在于，在沉积得到第一金属层(13)、第二金属层(12)和第三金属层(11)后，进行黄光制程，刻蚀得到所述薄膜晶体管结构。
10.根据权利要求6所述的薄膜晶体管的制造方法，其特征在于，所述钝化层(10)由基于化学气相沉积方式沉积氧化硅薄膜得到。
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