KR101139142B1 - 질화물계 반도체 소자 및 그 제조 방법 - Google Patents

질화물계 반도체 소자 및 그 제조 방법 Download PDF

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Publication number
KR101139142B1
KR101139142B1 KR1020107012782A KR20107012782A KR101139142B1 KR 101139142 B1 KR101139142 B1 KR 101139142B1 KR 1020107012782 A KR1020107012782 A KR 1020107012782A KR 20107012782 A KR20107012782 A KR 20107012782A KR 101139142 B1 KR101139142 B1 KR 101139142B1
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layer
gan
nitride
electrode
plane
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KR20100087372A (ko
Inventor
도시야 요코가와
미츠아키 오야
아츠시 야마다
료우 가토
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파나소닉 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020107012782A 2008-11-06 2009-06-04 질화물계 반도체 소자 및 그 제조 방법 Expired - Fee Related KR101139142B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2008285155 2008-11-06
JPJP-P-2008-285155 2008-11-06
JP2009030147 2009-02-12
JPJP-P-2009-030147 2009-02-12
JPJP-P-2009-097684 2009-04-14
JP2009097684 2009-04-14
PCT/JP2009/002532 WO2010052810A1 (ja) 2008-11-06 2009-06-04 窒化物系半導体素子およびその製造方法

Publications (2)

Publication Number Publication Date
KR20100087372A KR20100087372A (ko) 2010-08-04
KR101139142B1 true KR101139142B1 (ko) 2012-04-26

Family

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KR1020107012782A Expired - Fee Related KR101139142B1 (ko) 2008-11-06 2009-06-04 질화물계 반도체 소자 및 그 제조 방법

Country Status (6)

Country Link
US (4) US20110156048A1 (enExample)
EP (1) EP2226853B1 (enExample)
JP (2) JP4486701B1 (enExample)
KR (1) KR101139142B1 (enExample)
CN (1) CN101971364B (enExample)
WO (1) WO2010052810A1 (enExample)

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KR101220042B1 (ko) 2006-02-20 2013-01-18 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
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CN102067348B (zh) * 2009-04-06 2013-03-27 松下电器产业株式会社 氮化物系半导体元件及其制造方法
CN102511085A (zh) * 2009-12-25 2012-06-20 松下电器产业株式会社 氮化物系半导体元件及其制造方法
JP4909448B2 (ja) 2010-04-01 2012-04-04 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP4843123B2 (ja) 2010-04-01 2011-12-21 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP4820465B1 (ja) 2010-04-02 2011-11-24 パナソニック株式会社 窒化物系半導体素子およびその製造方法
CN102859724A (zh) 2010-04-28 2013-01-02 松下电器产业株式会社 氮化物系半导体元件及其制造方法
JP5547279B2 (ja) * 2010-04-28 2014-07-09 パナソニック株式会社 窒化物系半導体素子およびその製造方法
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CN103003964A (zh) 2011-01-21 2013-03-27 松下电器产业株式会社 氮化镓类化合物半导体发光元件和具有该发光元件的光源
JP5232338B2 (ja) * 2011-04-08 2013-07-10 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5437533B2 (ja) * 2011-04-12 2014-03-12 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子およびその製造方法
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CN103081138A (zh) 2011-05-18 2013-05-01 松下电器产业株式会社 氮化物类半导体发光元件及其制造方法
KR20140085508A (ko) * 2011-10-13 2014-07-07 가부시키가이샤 다무라 세이사쿠쇼 결정 적층 구조체 및 그 제조 방법 및 반도체 소자
CN105144345B (zh) * 2013-03-15 2018-05-08 晶体公司 与赝配电子和光电器件的平面接触
KR102111140B1 (ko) * 2013-08-30 2020-05-14 서울바이오시스 주식회사 발광 다이오드 및 그것을 제조하는 방법
KR101439064B1 (ko) 2013-12-02 2014-09-05 단국대학교 산학협력단 이종 접합 구조를 가지는 발광 다이오드 및 이의 제조방법
JP2024106734A (ja) * 2023-01-27 2024-08-08 国立大学法人東海国立大学機構 半導体装置および半導体装置の製造方法

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