JP4486701B1 - 窒化物系半導体素子およびその製造方法 - Google Patents

窒化物系半導体素子およびその製造方法 Download PDF

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JP4486701B1
JP4486701B1 JP2009536554A JP2009536554A JP4486701B1 JP 4486701 B1 JP4486701 B1 JP 4486701B1 JP 2009536554 A JP2009536554 A JP 2009536554A JP 2009536554 A JP2009536554 A JP 2009536554A JP 4486701 B1 JP4486701 B1 JP 4486701B1
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layer
nitride
plane
gan
electrode
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JPWO2010052810A1 (ja
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俊哉 横川
満明 大屋
篤志 山田
亮 加藤
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP2009536554A 2008-11-06 2009-06-04 窒化物系半導体素子およびその製造方法 Active JP4486701B1 (ja)

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JP2008285155 2008-11-06
JP2008285155 2008-11-06
JP2009030147 2009-02-12
JP2009030147 2009-02-12
JP2009097684 2009-04-14
JP2009097684 2009-04-14
PCT/JP2009/002532 WO2010052810A1 (ja) 2008-11-06 2009-06-04 窒化物系半導体素子およびその製造方法

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EP (1) EP2226853B1 (enExample)
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KR (1) KR101139142B1 (enExample)
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Cited By (6)

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WO2010116703A1 (ja) * 2009-04-06 2010-10-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
WO2011135862A1 (ja) * 2010-04-28 2011-11-03 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP4843122B2 (ja) * 2009-12-25 2011-12-21 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5232338B2 (ja) * 2011-04-08 2013-07-10 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US8633495B2 (en) 2006-02-20 2014-01-21 Lg Innotek Co., Ltd. Nitride semiconductor light-emitting device and method of manufacturing the same
US8648378B2 (en) 2008-11-06 2014-02-11 Panasonic Corporation Nitride-based semiconductor device and method for fabricating the same

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CN101981713B (zh) 2009-03-11 2013-11-20 松下电器产业株式会社 氮化物系半导体元件及其制造方法
EP2555257A1 (en) 2010-04-01 2013-02-06 Panasonic Corporation Nitride semiconductor element and manufacturing method therefor
JP4843123B2 (ja) 2010-04-01 2011-12-21 パナソニック株式会社 窒化物系半導体素子およびその製造方法
CN102511086A (zh) 2010-04-02 2012-06-20 松下电器产业株式会社 氮化物系半导体元件及其制造方法
JPWO2011135866A1 (ja) 2010-04-28 2013-07-18 パナソニック株式会社 窒化物系半導体素子およびその製造方法
EP2648456A1 (en) 2010-12-01 2013-10-09 Nec Corporation Wireless base station, relay base station, mobile terminal, mobile communication system and operation control method
EP2667421A1 (en) 2011-01-21 2013-11-27 Panasonic Corporation Gallium nitride compound semiconductor light emitting element and light source provided with said light emitting element
WO2012140844A1 (ja) * 2011-04-12 2012-10-18 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子およびその製造方法
JP2012231087A (ja) * 2011-04-27 2012-11-22 Mitsubishi Chemicals Corp 窒化物系ｌｅｄの製造方法
CN103081138A (zh) 2011-05-18 2013-05-01 松下电器产业株式会社 氮化物类半导体发光元件及其制造方法
US9059077B2 (en) * 2011-10-13 2015-06-16 Tamura Corporation Crystal layered structure and method for manufacturing same, and semiconductor element
WO2014151264A1 (en) 2013-03-15 2014-09-25 Crystal Is, Inc. Planar contacts to pseudomorphic electronic and optoelectronic devices
KR102111140B1 (ko) * 2013-08-30 2020-05-14 서울바이오시스 주식회사 발광 다이오드 및 그것을 제조하는 방법
KR101439064B1 (ko) 2013-12-02 2014-09-05 단국대학교 산학협력단 이종 접합 구조를 가지는 발광 다이오드 및 이의 제조방법
JP2024106734A (ja) * 2023-01-27 2024-08-08 国立大学法人東海国立大学機構 半導体装置および半導体装置の製造方法

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EP2226853A1 (en) 2010-09-08
US20130092968A1 (en) 2013-04-18
US8648378B2 (en) 2014-02-11
WO2010052810A1 (ja) 2010-05-14
US20130119398A1 (en) 2013-05-16
JP2010267950A (ja) 2010-11-25
JPWO2010052810A1 (ja) 2012-03-29
KR20100087372A (ko) 2010-08-04
US8686561B2 (en) 2014-04-01
CN101971364B (zh) 2013-05-15
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