KR101097687B1 - 소거 시간을 단축하는 것이 가능한 반도체 기억 장치 - Google Patents

소거 시간을 단축하는 것이 가능한 반도체 기억 장치 Download PDF

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Publication number
KR101097687B1
KR101097687B1 KR1020080125817A KR20080125817A KR101097687B1 KR 101097687 B1 KR101097687 B1 KR 101097687B1 KR 1020080125817 A KR1020080125817 A KR 1020080125817A KR 20080125817 A KR20080125817 A KR 20080125817A KR 101097687 B1 KR101097687 B1 KR 101097687B1
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South Korea
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erase
voltage
word lines
level
memory cells
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KR20090063133A (ko
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노보루 시바따
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가부시끼가이샤 도시바
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
KR1020080125817A 2007-12-13 2008-12-11 소거 시간을 단축하는 것이 가능한 반도체 기억 장치 Active KR101097687B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2007-322415 2007-12-13
JP2007322415 2007-12-13
JP2007338363A JP2009163782A (ja) 2007-12-13 2007-12-27 半導体記憶装置
JPJP-P-2007-338363 2007-12-27

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KR20090063133A KR20090063133A (ko) 2009-06-17
KR101097687B1 true KR101097687B1 (ko) 2011-12-22

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US (2) US12300333B2 (enExample)
JP (2) JP2009163782A (enExample)
KR (1) KR101097687B1 (enExample)

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JP5390551B2 (ja) * 2011-03-02 2014-01-15 株式会社東芝 半導体記憶装置およびそのテスト方法
JP5649560B2 (ja) 2011-12-27 2015-01-07 株式会社東芝 不揮発性半導体記憶装置
KR101975406B1 (ko) 2012-07-11 2019-05-07 삼성전자주식회사 비휘발성 메모리 장치 및 그것을 포함하는 메모리 시스템 및 그것의 메모리 블록 관리, 소거, 및 프로그램 방법들
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Publication number Publication date
US12300333B2 (en) 2025-05-13
US20240047001A1 (en) 2024-02-08
JP2009163782A (ja) 2009-07-23
KR20090063133A (ko) 2009-06-17
US20250239314A1 (en) 2025-07-24
JP2012195051A (ja) 2012-10-11

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