JP2009163782A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

Info

Publication number
JP2009163782A
JP2009163782A JP2007338363A JP2007338363A JP2009163782A JP 2009163782 A JP2009163782 A JP 2009163782A JP 2007338363 A JP2007338363 A JP 2007338363A JP 2007338363 A JP2007338363 A JP 2007338363A JP 2009163782 A JP2009163782 A JP 2009163782A
Authority
JP
Japan
Prior art keywords
erase
word lines
voltage
verify
cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007338363A
Other languages
English (en)
Japanese (ja)
Inventor
Noboru Shibata
昇 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2007338363A priority Critical patent/JP2009163782A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to US12/332,681 priority patent/US7995392B2/en
Priority to KR1020080125817A priority patent/KR101097687B1/ko
Publication of JP2009163782A publication Critical patent/JP2009163782A/ja
Priority to US13/162,051 priority patent/US8335114B2/en
Priority to US13/660,044 priority patent/US8971130B2/en
Priority to US14/597,787 priority patent/US9595344B2/en
Priority to US15/422,640 priority patent/US10037812B2/en
Priority to US16/023,103 priority patent/US10446247B2/en
Priority to US16/591,819 priority patent/US11056202B2/en
Priority to US17/348,886 priority patent/US11830559B2/en
Priority to US18/486,433 priority patent/US12300333B2/en
Priority to US19/175,612 priority patent/US20250239314A1/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
JP2007338363A 2007-12-13 2007-12-27 半導体記憶装置 Pending JP2009163782A (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP2007338363A JP2009163782A (ja) 2007-12-13 2007-12-27 半導体記憶装置
US12/332,681 US7995392B2 (en) 2007-12-13 2008-12-11 Semiconductor memory device capable of shortening erase time
KR1020080125817A KR101097687B1 (ko) 2007-12-13 2008-12-11 소거 시간을 단축하는 것이 가능한 반도체 기억 장치
US13/162,051 US8335114B2 (en) 2007-12-13 2011-06-16 Semiconductor memory device capable of shortening erase time
US13/660,044 US8971130B2 (en) 2007-12-13 2012-10-25 Semiconductor memory device capable of shortening erase time
US14/597,787 US9595344B2 (en) 2007-12-13 2015-01-15 Semiconductor memory device capable of shortening erase time
US15/422,640 US10037812B2 (en) 2007-12-13 2017-02-02 Semiconductor memory device capable of shortening erase time
US16/023,103 US10446247B2 (en) 2007-12-13 2018-06-29 Semiconductor memory device capable of shortening erase time
US16/591,819 US11056202B2 (en) 2007-12-13 2019-10-03 Semiconductor memory device capable of shortening erase time
US17/348,886 US11830559B2 (en) 2007-12-13 2021-06-16 Semiconductor memory device capable of shortening erase time
US18/486,433 US12300333B2 (en) 2007-12-13 2023-10-13 Semiconductor memory device capable of shortening erase time
US19/175,612 US20250239314A1 (en) 2007-12-13 2025-04-10 Semiconductor memory device capable of shortening erase time

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007322415 2007-12-13
JP2007338363A JP2009163782A (ja) 2007-12-13 2007-12-27 半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012161889A Division JP2012195051A (ja) 2007-12-13 2012-07-20 半導体記憶装置

Publications (1)

Publication Number Publication Date
JP2009163782A true JP2009163782A (ja) 2009-07-23

Family

ID=40966248

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007338363A Pending JP2009163782A (ja) 2007-12-13 2007-12-27 半導体記憶装置
JP2012161889A Withdrawn JP2012195051A (ja) 2007-12-13 2012-07-20 半導体記憶装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2012161889A Withdrawn JP2012195051A (ja) 2007-12-13 2012-07-20 半導体記憶装置

Country Status (3)

Country Link
US (2) US12300333B2 (enExample)
JP (2) JP2009163782A (enExample)
KR (1) KR101097687B1 (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011150750A (ja) * 2010-01-20 2011-08-04 Toshiba Corp 半導体記憶装置
JP2012027979A (ja) * 2010-07-23 2012-02-09 Winbond Electronics Corp 半導体メモリ
JP2012181900A (ja) * 2011-03-02 2012-09-20 Toshiba Corp 半導体記憶装置およびそのテスト方法
JP2012523646A (ja) * 2009-04-09 2012-10-04 サンディスク テクノロジーズ インコーポレイテッド 不揮発性記憶装置のためのツーパス消去
JP2015069690A (ja) * 2013-10-01 2015-04-13 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9064586B2 (en) 2011-12-27 2015-06-23 Kabushiki Kaisha Toshiba Non-volatile semiconductor storage device having controller configured to perform preliminary erase operation
JP2017162528A (ja) * 2016-03-08 2017-09-14 東芝メモリ株式会社 不揮発性半導体記憶装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101975406B1 (ko) 2012-07-11 2019-05-07 삼성전자주식회사 비휘발성 메모리 장치 및 그것을 포함하는 메모리 시스템 및 그것의 메모리 블록 관리, 소거, 및 프로그램 방법들
US9251903B2 (en) 2014-03-13 2016-02-02 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and control method thereof
US9390808B1 (en) 2015-09-11 2016-07-12 Kabushiki Kaisha Toshiba Semiconductor memory device
US10055159B2 (en) * 2016-06-20 2018-08-21 Samsung Electronics Co., Ltd. Morphic storage device
US12469569B2 (en) * 2023-11-27 2025-11-11 SanDisk Technologies, Inc. Smart erase inhibit

Citations (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750096A (ja) * 1993-08-05 1995-02-21 Mitsubishi Electric Corp 半導体記憶装置
JPH08190797A (ja) * 1994-11-11 1996-07-23 Sony Corp 不揮発性半導体メモリ装置
JPH08306196A (ja) * 1995-04-28 1996-11-22 Toshiba Corp 不揮発性半導体記憶装置
JPH097383A (ja) * 1995-06-09 1997-01-10 Samsung Electron Co Ltd 不揮発性半導体メモリ装置とそのワードライン駆動方法
JPH1011990A (ja) * 1996-06-26 1998-01-16 Nkk Corp ベリファイ機能を有する不揮発性記憶装置
JPH1055691A (ja) * 1996-08-08 1998-02-24 Ricoh Co Ltd 不揮発性半導体メモリ
JPH10228783A (ja) * 1997-02-10 1998-08-25 Toshiba Microelectron Corp 不揮発性半導体記憶装置とその動作方法
JPH11176175A (ja) * 1997-12-11 1999-07-02 Toshiba Corp 不揮発性半導体記憶装置
JP2000285692A (ja) * 1999-04-01 2000-10-13 Sony Corp 不揮発性半導体記憶装置、並びにデータ書き込み方法およびデータ読み出し方法
JP2001283595A (ja) * 2000-01-27 2001-10-12 Mitsubishi Electric Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
JP2002025283A (ja) * 2000-06-27 2002-01-25 Hynix Semiconductor Inc フラッシュメモリ素子の消去方法
JP2002216487A (ja) * 2001-01-10 2002-08-02 Samsung Electronics Co Ltd メモリ装置駆動方法
JP2002358792A (ja) * 2001-03-29 2002-12-13 Toshiba Corp 半導体記憶装置
JP2002367380A (ja) * 2001-06-05 2002-12-20 Sony Corp 不揮発性半導体メモリ装置
JP2003068086A (ja) * 2001-08-28 2003-03-07 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2003257190A (ja) * 2001-12-25 2003-09-12 Toshiba Corp 不揮発性半導体記憶装置及びその消去シーケンス
JP2004206829A (ja) * 2002-12-26 2004-07-22 Renesas Technology Corp 不揮発性半導体記憶装置のデータ消去方法
JP2005025891A (ja) * 2003-07-04 2005-01-27 Toshiba Corp 不揮発性半導体記憶装置、そのサブブロック消去方法および電子装置
JP2005100501A (ja) * 2003-09-22 2005-04-14 Toshiba Corp 不揮発性半導体記憶装置
JP2005327409A (ja) * 2004-05-17 2005-11-24 Toshiba Corp 半導体記憶装置
JP2006500705A (ja) * 2002-07-31 2006-01-05 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド フラッシュメモリデバイスの多重セクタの消去中に消去電圧をコントロールするためのシステム及び方法
JP2006216215A (ja) * 2005-01-27 2006-08-17 Micronics Internatl Co Ltd 不揮発性メモリセル、これを有するメモリアレイ、並びに、セル及びアレイの操作方法
JP2006228405A (ja) * 2005-01-19 2006-08-31 Saifun Semiconductors Ltd 部分的な消去の確認
JP2006528403A (ja) * 2003-05-08 2006-12-14 マイクロン　テクノロジー　インコーポレイテッド 読出しとベリファイの均一なしきい値を有するメモリ
JP2007184073A (ja) * 2006-01-06 2007-07-19 Samsung Electronics Co Ltd 基準フェイルビットの確認回路及び不揮発性半導体メモリ装置
JP2007523502A (ja) * 2004-02-24 2007-08-16 マイクロン テクノロジー、インコーポレイテッド 縦型ｅｅｐｒｏｍｎｒｏｍメモリデバイス

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783417A (en) 1986-02-07 1988-11-08 Aluminum Company Of America System for on-line molten metal analysis
US6381670B1 (en) 1997-01-07 2002-04-30 Aplus Flash Technology, Inc. Flash memory array having maximum and minimum threshold voltage detection for eliminating over-erasure problem and enhancing write operation
JPH11273368A (ja) * 1998-03-23 1999-10-08 Toshiba Corp 不揮発性半導体メモリ
US6714541B1 (en) 1999-08-10 2004-03-30 Cisco Technology, Inc. Method and apparatus for encoding bridging/switching information within a routing information filed in a token ring environment
JP4149637B2 (ja) 2000-05-25 2008-09-10 株式会社東芝 半導体装置
FR2816751A1 (fr) 2000-11-15 2002-05-17 St Microelectronics Sa Memoire flash effacable par page
JP2002157890A (ja) 2000-11-16 2002-05-31 Mitsubishi Electric Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US6549467B2 (en) 2001-03-09 2003-04-15 Micron Technology, Inc. Non-volatile memory device with erase address register
JP2004171686A (ja) 2002-11-20 2004-06-17 Renesas Technology Corp 不揮発性半導体記憶装置およびそのデータ消去方法
JP3935139B2 (ja) 2002-11-29 2007-06-20 株式会社東芝 半導体記憶装置
US6829167B2 (en) 2002-12-12 2004-12-07 Sandisk Corporation Error recovery for nonvolatile memory
US7233522B2 (en) 2002-12-31 2007-06-19 Sandisk 3D Llc NAND memory array incorporating capacitance boosting of channel regions in unselected memory cells and method for operation of same
JP4262033B2 (ja) 2003-08-27 2009-05-13 株式会社ルネサステクノロジ 半導体集積回路
US7009889B2 (en) 2004-05-28 2006-03-07 Sandisk Corporation Comprehensive erase verification for non-volatile memory
JP2006059481A (ja) * 2004-08-23 2006-03-02 Renesas Technology Corp 半導体記憶装置
US7430138B2 (en) * 2005-03-31 2008-09-30 Sandisk Corporation Erasing non-volatile memory utilizing changing word line conditions to compensate for slower erasing memory cells
KR100687424B1 (ko) 2005-08-29 2007-02-26 주식회사 하이닉스반도체 비휘발성 메모리 장치
KR100704025B1 (ko) * 2005-09-09 2007-04-04 삼성전자주식회사 셀스트링에 배치되는 더미셀을 가지는 불휘발성 반도체메모리 장치
JP2009007383A (ja) 2005-10-13 2009-01-15 Kaneka Corp イソブチレン系ブロック共重合体
JP2007272952A (ja) * 2006-03-30 2007-10-18 Renesas Technology Corp 半導体記憶装置
JP4960018B2 (ja) * 2006-05-31 2012-06-27 株式会社東芝 不揮発性半導体メモリ
US7539066B2 (en) 2006-12-28 2009-05-26 Intel Corporation Method, apparatus, and system for improved erase operation in flash memory
JP5026100B2 (ja) 2007-02-06 2012-09-12 株式会社ティラド 熱交換器
US7586132B2 (en) 2007-06-06 2009-09-08 Micrel, Inc. Power FET with low on-resistance using merged metal layers
US7995392B2 (en) 2007-12-13 2011-08-09 Kabushiki Kaisha Toshiba Semiconductor memory device capable of shortening erase time
JP5119064B2 (ja) 2008-07-03 2013-01-16 京楽産業．株式会社 遊技機
JP4940417B2 (ja) 2008-08-28 2012-05-30 株式会社東芝 磁気記憶装置及び磁気記憶媒体
JP5452052B2 (ja) 2009-03-27 2014-03-26 株式会社吉野工業所 食品容器
JP5582638B2 (ja) 2010-02-25 2014-09-03 独立行政法人産業技術総合研究所 太陽電池
KR102127416B1 (ko) 2013-06-27 2020-06-26 삼성전자주식회사 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 읽기 방법

Patent Citations (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750096A (ja) * 1993-08-05 1995-02-21 Mitsubishi Electric Corp 半導体記憶装置
JPH08190797A (ja) * 1994-11-11 1996-07-23 Sony Corp 不揮発性半導体メモリ装置
JPH08306196A (ja) * 1995-04-28 1996-11-22 Toshiba Corp 不揮発性半導体記憶装置
JPH097383A (ja) * 1995-06-09 1997-01-10 Samsung Electron Co Ltd 不揮発性半導体メモリ装置とそのワードライン駆動方法
JPH1011990A (ja) * 1996-06-26 1998-01-16 Nkk Corp ベリファイ機能を有する不揮発性記憶装置
JPH1055691A (ja) * 1996-08-08 1998-02-24 Ricoh Co Ltd 不揮発性半導体メモリ
JPH10228783A (ja) * 1997-02-10 1998-08-25 Toshiba Microelectron Corp 不揮発性半導体記憶装置とその動作方法
JPH11176175A (ja) * 1997-12-11 1999-07-02 Toshiba Corp 不揮発性半導体記憶装置
JP2000285692A (ja) * 1999-04-01 2000-10-13 Sony Corp 不揮発性半導体記憶装置、並びにデータ書き込み方法およびデータ読み出し方法
JP2001283595A (ja) * 2000-01-27 2001-10-12 Mitsubishi Electric Corp 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
JP2002025283A (ja) * 2000-06-27 2002-01-25 Hynix Semiconductor Inc フラッシュメモリ素子の消去方法
JP2002216487A (ja) * 2001-01-10 2002-08-02 Samsung Electronics Co Ltd メモリ装置駆動方法
JP2002358792A (ja) * 2001-03-29 2002-12-13 Toshiba Corp 半導体記憶装置
JP2002367380A (ja) * 2001-06-05 2002-12-20 Sony Corp 不揮発性半導体メモリ装置
JP2003068086A (ja) * 2001-08-28 2003-03-07 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP2003257190A (ja) * 2001-12-25 2003-09-12 Toshiba Corp 不揮発性半導体記憶装置及びその消去シーケンス
JP2006500705A (ja) * 2002-07-31 2006-01-05 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド フラッシュメモリデバイスの多重セクタの消去中に消去電圧をコントロールするためのシステム及び方法
JP2004206829A (ja) * 2002-12-26 2004-07-22 Renesas Technology Corp 不揮発性半導体記憶装置のデータ消去方法
JP2006528403A (ja) * 2003-05-08 2006-12-14 マイクロン　テクノロジー　インコーポレイテッド 読出しとベリファイの均一なしきい値を有するメモリ
JP2005025891A (ja) * 2003-07-04 2005-01-27 Toshiba Corp 不揮発性半導体記憶装置、そのサブブロック消去方法および電子装置
JP2005100501A (ja) * 2003-09-22 2005-04-14 Toshiba Corp 不揮発性半導体記憶装置
JP2007523502A (ja) * 2004-02-24 2007-08-16 マイクロン テクノロジー、インコーポレイテッド 縦型ｅｅｐｒｏｍｎｒｏｍメモリデバイス
JP2005327409A (ja) * 2004-05-17 2005-11-24 Toshiba Corp 半導体記憶装置
JP2006228405A (ja) * 2005-01-19 2006-08-31 Saifun Semiconductors Ltd 部分的な消去の確認
JP2006216215A (ja) * 2005-01-27 2006-08-17 Micronics Internatl Co Ltd 不揮発性メモリセル、これを有するメモリアレイ、並びに、セル及びアレイの操作方法
JP2007184073A (ja) * 2006-01-06 2007-07-19 Samsung Electronics Co Ltd 基準フェイルビットの確認回路及び不揮発性半導体メモリ装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012523646A (ja) * 2009-04-09 2012-10-04 サンディスク テクノロジーズ インコーポレイテッド 不揮発性記憶装置のためのツーパス消去
JP2011150750A (ja) * 2010-01-20 2011-08-04 Toshiba Corp 半導体記憶装置
US8379445B2 (en) 2010-01-20 2013-02-19 Kabushiki Kaisha Toshiba Semiconductor storage device capable of reducing erasure time
JP2012027979A (ja) * 2010-07-23 2012-02-09 Winbond Electronics Corp 半導体メモリ
JP2012181900A (ja) * 2011-03-02 2012-09-20 Toshiba Corp 半導体記憶装置およびそのテスト方法
US9064586B2 (en) 2011-12-27 2015-06-23 Kabushiki Kaisha Toshiba Non-volatile semiconductor storage device having controller configured to perform preliminary erase operation
JP2015069690A (ja) * 2013-10-01 2015-04-13 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
US9214241B2 (en) 2013-10-01 2015-12-15 Winbond Electronics Corp. Semiconductor memory device and erasing method
KR101669156B1 (ko) 2013-10-01 2016-10-25 윈본드 일렉트로닉스 코포레이션 반도체 기억장치 및 소거 방법
JP2017162528A (ja) * 2016-03-08 2017-09-14 東芝メモリ株式会社 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JP2012195051A (ja) 2012-10-11
US20250239314A1 (en) 2025-07-24
KR101097687B1 (ko) 2011-12-22
US20240047001A1 (en) 2024-02-08
US12300333B2 (en) 2025-05-13
KR20090063133A (ko) 2009-06-17

Similar Documents

Publication Publication Date Title
US11830559B2 (en) Semiconductor memory device capable of shortening erase time
US12300333B2 (en) Semiconductor memory device capable of shortening erase time
JP5414550B2 (ja) 半導体記憶装置
KR100674546B1 (ko) 네가티브 임계 전압을 설정하는 것이 가능한 반도체 기억장치
US6876578B2 (en) Semiconductor memory device for storing multivalued data
JP4945187B2 (ja) 半導体記憶装置
JP5142478B2 (ja) 半導体記憶装置
JP5305751B2 (ja) 半導体記憶装置
JP5193815B2 (ja) 半導体記憶装置
JP4843362B2 (ja) 半導体記憶装置
JP5296175B2 (ja) 半導体記憶装置
KR100894588B1 (ko) 반도체 기억 장치
JP2011141944A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100224

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120514

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120522

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120529

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120720

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121106