KR100846464B1 - 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법 - Google Patents

비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법 Download PDF

Info

Publication number
KR100846464B1
KR100846464B1 KR1020020029664A KR20020029664A KR100846464B1 KR 100846464 B1 KR100846464 B1 KR 100846464B1 KR 1020020029664 A KR1020020029664 A KR 1020020029664A KR 20020029664 A KR20020029664 A KR 20020029664A KR 100846464 B1 KR100846464 B1 KR 100846464B1
Authority
KR
South Korea
Prior art keywords
gate
pattern
electrode
amorphous silicon
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020020029664A
Other languages
English (en)
Korean (ko)
Other versions
KR20030091571A (ko
Inventor
김동규
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020020029664A priority Critical patent/KR100846464B1/ko
Priority to US10/293,095 priority patent/US6922217B2/en
Priority to TW091133519A priority patent/TWI282478B/zh
Priority to CNB028279484A priority patent/CN100478752C/zh
Priority to AU2002361508A priority patent/AU2002361508A1/en
Priority to PCT/KR2002/002161 priority patent/WO2003100511A1/en
Priority to JP2004507907A priority patent/JP4533132B2/ja
Publication of KR20030091571A publication Critical patent/KR20030091571A/ko
Priority to US11/177,113 priority patent/US7379148B2/en
Priority to US12/108,337 priority patent/US8619207B2/en
Application granted granted Critical
Publication of KR100846464B1 publication Critical patent/KR100846464B1/ko
Priority to US14/140,220 priority patent/US9454049B2/en
Priority to US15/277,266 priority patent/US10216053B2/en
Priority to US16/249,346 priority patent/US10338443B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13458—Terminal pads
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3674—Details of drivers for scan electrodes
    • G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0404—Matrix technologies
    • G09G2300/0408—Integration of the drivers onto the display substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020020029664A 2002-05-28 2002-05-28 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법 Expired - Lifetime KR100846464B1 (ko)

Priority Applications (12)

Application Number Priority Date Filing Date Title
KR1020020029664A KR100846464B1 (ko) 2002-05-28 2002-05-28 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법
US10/293,095 US6922217B2 (en) 2002-05-28 2002-11-13 Amorphous silicon thin-film transistor liquid crystal display
TW091133519A TWI282478B (en) 2002-05-28 2002-11-15 Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
JP2004507907A JP4533132B2 (ja) 2002-05-28 2002-11-19 非晶質シリコン薄膜トランジスタ−液晶表示装置及びそれの製造方法
AU2002361508A AU2002361508A1 (en) 2002-05-28 2002-11-19 Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
PCT/KR2002/002161 WO2003100511A1 (en) 2002-05-28 2002-11-19 Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
CNB028279484A CN100478752C (zh) 2002-05-28 2002-11-19 非晶硅薄膜晶体管液晶显示器及其制造方法
US11/177,113 US7379148B2 (en) 2002-05-28 2005-07-08 Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
US12/108,337 US8619207B2 (en) 2002-05-28 2008-04-23 Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
US14/140,220 US9454049B2 (en) 2002-05-28 2013-12-24 Method of manufacturing of amorphous silicon thin film transistor liquid crystal display device
US15/277,266 US10216053B2 (en) 2002-05-28 2016-09-27 Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same
US16/249,346 US10338443B2 (en) 2002-05-28 2019-01-16 Amorphous silicon thin film transistor-liquid crystal display device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020029664A KR100846464B1 (ko) 2002-05-28 2002-05-28 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20030091571A KR20030091571A (ko) 2003-12-03
KR100846464B1 true KR100846464B1 (ko) 2008-07-17

Family

ID=29578160

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020029664A Expired - Lifetime KR100846464B1 (ko) 2002-05-28 2002-05-28 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법

Country Status (7)

Country Link
US (6) US6922217B2 (enExample)
JP (1) JP4533132B2 (enExample)
KR (1) KR100846464B1 (enExample)
CN (1) CN100478752C (enExample)
AU (1) AU2002361508A1 (enExample)
TW (1) TWI282478B (enExample)
WO (1) WO2003100511A1 (enExample)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6509616B2 (en) * 2000-09-29 2003-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3917845B2 (ja) * 2001-11-16 2007-05-23 シャープ株式会社 液晶表示装置
JP4027691B2 (ja) * 2002-03-18 2007-12-26 株式会社日立製作所 液晶表示装置
JP4197233B2 (ja) * 2002-03-20 2008-12-17 株式会社日立製作所 表示装置
KR100846464B1 (ko) 2002-05-28 2008-07-17 삼성전자주식회사 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법
KR100911470B1 (ko) 2003-01-30 2009-08-11 삼성전자주식회사 액정표시장치
KR100965176B1 (ko) * 2003-04-07 2010-06-24 삼성전자주식회사 디지털 엑스레이 디텍터용 어레이 패널 및 이의 제조 방법
TW588471B (en) * 2003-04-24 2004-05-21 Delta Optoelectronics Inc Active matrix organic light emitting diode and fabricating method thereof
US7385598B2 (en) * 2003-06-27 2008-06-10 Samsung Electronics, Co., Ltd. Driver for operating multiple display devices
US7309922B2 (en) * 2003-10-20 2007-12-18 Samsun Electronics Co., Ltd. Lower substrate, display apparatus having the same and method of manufacturing the same
KR100940987B1 (ko) * 2003-12-29 2010-02-05 엘지디스플레이 주식회사 액정표시장치
US7289594B2 (en) * 2004-03-31 2007-10-30 Lg.Philips Lcd Co., Ltd. Shift registrer and driving method thereof
KR101061846B1 (ko) * 2004-08-19 2011-09-02 삼성전자주식회사 표시 장치용 구동 장치
KR101066303B1 (ko) * 2004-09-09 2011-09-20 엘지디스플레이 주식회사 박막 트랜지스터 어레이 기판 및 그 제조 방법
US20060056267A1 (en) * 2004-09-13 2006-03-16 Samsung Electronics Co., Ltd. Driving unit and display apparatus having the same
KR101071257B1 (ko) * 2004-09-17 2011-10-10 삼성전자주식회사 다중 도메인 박막 트랜지스터 표시판 및 이를 포함하는액정 표시 장치
KR101166580B1 (ko) 2004-12-31 2012-07-18 엘지디스플레이 주식회사 액정표시소자
KR101246023B1 (ko) * 2005-01-06 2013-03-26 삼성디스플레이 주식회사 어레이 기판 및 이를 갖는 표시장치
JP4916666B2 (ja) * 2005-01-12 2012-04-18 株式会社 日立ディスプレイズ 表示装置
US9153341B2 (en) 2005-10-18 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Shift register, semiconductor device, display device, and electronic device
TW200719002A (en) * 2005-11-07 2007-05-16 Au Optronics Corp Liquid crystal display panel module and flexible printed circuit board thereof
KR101115026B1 (ko) * 2006-01-10 2012-03-06 삼성전자주식회사 게이트 드라이버와 이를 구비한 박막 트랜지스터 기판 및액정 표시 장치
US8334960B2 (en) 2006-01-18 2012-12-18 Samsung Display Co., Ltd. Liquid crystal display having gate driver with multiple regions
KR101261450B1 (ko) * 2006-02-06 2013-05-10 삼성디스플레이 주식회사 액정 표시 장치와 그 제조 방법
KR101246830B1 (ko) 2006-06-09 2013-03-28 삼성디스플레이 주식회사 표시 장치 및 이의 구동 방법
KR101244898B1 (ko) * 2006-06-28 2013-03-19 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 그 제조 방법
KR20080008795A (ko) * 2006-07-21 2008-01-24 삼성전자주식회사 표시 기판 및 이를 구비한 표시 장치
TWI338275B (en) * 2006-08-24 2011-03-01 Au Optronics Corp Shift register with lower coupling effect and the related lcd
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
TWI346320B (en) * 2006-12-26 2011-08-01 Au Optronics Corp Gate driving circuit and driving method thereof
JP2008191470A (ja) * 2007-02-06 2008-08-21 Toshiba Matsushita Display Technology Co Ltd 液晶表示装置
KR20080099541A (ko) * 2007-05-09 2008-11-13 삼성전자주식회사 표시 장치 및 그 제조 방법
US8334537B2 (en) * 2007-07-06 2012-12-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8786793B2 (en) 2007-07-27 2014-07-22 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
TWI372378B (en) * 2007-12-26 2012-09-11 Au Optronics Corp Gate driver-on-array and display panel
GB2459661A (en) * 2008-04-29 2009-11-04 Sharp Kk A low power NMOS latch for an LCD scan pulse shift register
KR101432764B1 (ko) * 2008-11-13 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
TWI501319B (zh) * 2008-12-26 2015-09-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TW202503729A (zh) * 2009-01-16 2025-01-16 日商半導體能源研究所股份有限公司 半導體裝置
WO2010092714A1 (ja) 2009-02-16 2010-08-19 シャープ株式会社 Ｔｆｔアレイ基板、及び、液晶表示パネル
EP2234100B1 (en) 2009-03-26 2016-11-02 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US8686422B2 (en) 2009-07-16 2014-04-01 Sharp Kabushiki Kaisha Active matrix substrate and active matrix display device
EP2477172A4 (en) * 2009-09-11 2016-03-23 Sharp Kk Active Matrix Substrate and Active Matrix Display Device
US8654108B2 (en) 2009-09-25 2014-02-18 Sharp Kabushiki Kaisha Liquid crystal display device
WO2011067964A1 (ja) * 2009-12-01 2011-06-09 シャープ株式会社 アクティブマトリクス基板及び表示装置
KR101377891B1 (ko) 2010-01-13 2014-03-25 샤프 가부시키가이샤 어레이 기판 및 액정 표시 패널
WO2011104945A1 (ja) 2010-02-25 2011-09-01 シャープ株式会社 表示装置
KR101308474B1 (ko) * 2010-04-19 2013-09-16 엘지디스플레이 주식회사 쉬프트 레지스터
WO2011132440A1 (ja) * 2010-04-22 2011-10-27 シャープ株式会社 アクティブマトリクス基板及び表示装置
KR101213494B1 (ko) * 2010-05-12 2012-12-20 삼성디스플레이 주식회사 입체형 표시장치, 플렉서블 표시장치 및 상기 표시장치들의 제조방법
US8575620B2 (en) * 2010-05-13 2013-11-05 Sharp Kabushiki Kaisha Circuit board and display device
KR101759985B1 (ko) * 2010-10-20 2017-07-21 삼성디스플레이 주식회사 게이트 구동 장치 및 이를 포함하는 액정 표시 장치
KR20120089505A (ko) 2010-12-10 2012-08-13 삼성전자주식회사 표시 장치 및 그 제조 방법
KR101758783B1 (ko) * 2010-12-27 2017-07-18 삼성디스플레이 주식회사 게이트 구동부, 이를 포함하는 표시 기판 및 이 표시 기판의 제조 방법
KR20150081871A (ko) 2014-01-07 2015-07-15 삼성디스플레이 주식회사 표시 장치
US9704888B2 (en) * 2014-01-08 2017-07-11 Apple Inc. Display circuitry with reduced metal routing resistance
KR20160014869A (ko) * 2014-07-29 2016-02-12 엘지디스플레이 주식회사 게이트 드라이버 내장형 액정표시장치용 어레이 기판 및 그 제조 방법
US9436792B2 (en) * 2014-08-22 2016-09-06 Samsung Electronics Co., Ltd. Method of designing layout of integrated circuit and method of manufacturing integrated circuit
JP6521794B2 (ja) 2014-09-03 2019-05-29 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US9589521B2 (en) * 2014-11-20 2017-03-07 Shenzhen China Star Optoelectronics Technology Co., Ltd. Liquid crystal display apparatus having wire-on-array structure
CN104536207A (zh) * 2014-12-31 2015-04-22 京东方科技集团股份有限公司 一种显示基板及显示装置
KR102416142B1 (ko) * 2015-08-31 2022-07-01 엘지디스플레이 주식회사 백커버 및 이를 이용한 투명표시장치
CN105609136A (zh) * 2016-01-04 2016-05-25 京东方科技集团股份有限公司 移位寄存器单元、驱动方法、栅极驱动电路和显示装置
CN105427799B (zh) * 2016-01-05 2018-03-06 京东方科技集团股份有限公司 移位寄存单元、移位寄存器、栅极驱动电路及显示装置
CN107134264B (zh) * 2016-02-26 2020-08-14 瀚宇彩晶股份有限公司 驱动电路和显示装置
KR102579866B1 (ko) * 2016-05-24 2023-09-19 삼성디스플레이 주식회사 게이트 구동회로를 포함하는 표시 기판
JP7089478B2 (ja) 2016-11-23 2022-06-22 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
US20200052005A1 (en) * 2017-02-23 2020-02-13 Sharp Kabushiki Kaisha Drive circuit, matrix substrate, and display device
JP2018155999A (ja) * 2017-03-21 2018-10-04 株式会社ジャパンディスプレイ 表示装置
FI127371B (en) * 2017-05-31 2018-04-30 Robotonchip Oy Passive routing on a mesh network
KR102460376B1 (ko) * 2017-10-27 2022-10-31 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102495057B1 (ko) * 2017-12-27 2023-02-03 삼성디스플레이 주식회사 표시 장치
CN108364618B (zh) * 2018-03-14 2021-01-01 京东方科技集团股份有限公司 移位寄存器单元及其驱动方法、栅极驱动电路、显示装置
US11405242B2 (en) 2018-07-02 2022-08-02 Rambus Inc. Methods and circuits for decision-feedback equalization with early high-order-symbol detection
JP7159031B2 (ja) * 2018-12-18 2022-10-24 株式会社ジャパンディスプレイ 表示装置
TWI708101B (zh) * 2019-07-05 2020-10-21 友達光電股份有限公司 畫素結構及顯示裝置
WO2021072737A1 (zh) * 2019-10-18 2021-04-22 京东方科技集团股份有限公司 显示面板
CN113228146B (zh) 2019-11-20 2024-03-22 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN111090202B (zh) 2020-03-22 2020-09-01 深圳市华星光电半导体显示技术有限公司 显示面板及显示装置
CN211669478U (zh) * 2020-03-25 2020-10-13 北京京东方光电科技有限公司 阵列基板、显示面板及显示装置
US11735107B2 (en) * 2020-04-10 2023-08-22 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate and manufacturing method thereof, display device
CN115616818A (zh) * 2020-04-10 2023-01-17 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10207398A (ja) * 1997-01-24 1998-08-07 Sharp Corp アクティブマトリクス基板
JP2000187247A (ja) * 1998-12-24 2000-07-04 Sharp Corp 半導体回路基板
JP2000338521A (ja) * 1999-05-26 2000-12-08 Matsushita Electric Ind Co Ltd 駆動回路一体型の液晶表示装置用の基板
JP2002148645A (ja) * 2000-11-08 2002-05-22 Toshiba Corp 表示装置用電極基板

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02208635A (ja) * 1989-02-08 1990-08-20 Seiko Epson Corp 半導体装置
KR920702779A (ko) 1990-04-24 1992-10-06 아이지와 스스무 회로 셀·어레이를 갖춘 반도체 장치 및 데이타 입출력 장치
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JP3189990B2 (ja) * 1991-09-27 2001-07-16 キヤノン株式会社 電子回路装置
JPH05281515A (ja) * 1992-03-31 1993-10-29 Sharp Corp アクティブマトリクス基板
JP3316201B2 (ja) * 1993-03-12 2002-08-19 株式会社半導体エネルギー研究所 半導体回路
JPH0897428A (ja) * 1994-09-22 1996-04-12 Sharp Corp 半導体装置
JP3457072B2 (ja) * 1994-10-20 2003-10-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH09105953A (ja) * 1995-10-12 1997-04-22 Semiconductor Energy Lab Co Ltd 液晶表示装置
JP3963974B2 (ja) * 1995-12-20 2007-08-22 株式会社半導体エネルギー研究所 液晶電気光学装置
KR100198728B1 (ko) * 1996-05-11 1999-06-15 구자홍 구동회로 일체형 액정표시소자 및 제조방법
KR100234892B1 (ko) * 1996-08-26 1999-12-15 구본준 액정표시장치의 구조 및 그 제조방법
JP3513371B2 (ja) * 1996-10-18 2004-03-31 キヤノン株式会社 マトリクス基板と液晶装置とこれらを用いた表示装置
JP3119228B2 (ja) * 1998-01-20 2000-12-18 日本電気株式会社 液晶表示パネル及びその製造方法
US6528357B2 (en) * 1998-03-13 2003-03-04 Kabushiki Kaisha Toshiba Method of manufacturing array substrate
JP2001051292A (ja) * 1998-06-12 2001-02-23 Semiconductor Energy Lab Co Ltd 半導体装置および半導体表示装置
JP3263365B2 (ja) * 1998-07-27 2002-03-04 松下電器産業株式会社 液晶表示パネルおよびその検査方法
JP3846057B2 (ja) * 1998-09-03 2006-11-15 セイコーエプソン株式会社 電気光学装置の駆動回路及び電気光学装置並びに電子機器
EP0997868B1 (en) * 1998-10-30 2012-03-14 Semiconductor Energy Laboratory Co., Ltd. Field sequential liquid crystal display device and driving method thereof, and head mounted display
KR100309923B1 (ko) * 1998-12-04 2001-12-17 윤종용 Nmos인버터,nmos3상태인버터,nmosnand게이트,및이들을포함하는비결정실리콘박막트랜지스터액정표시장치게이트구동회로
JP4549475B2 (ja) * 1999-02-12 2010-09-22 株式会社半導体エネルギー研究所 半導体装置、電子機器、および半導体装置の作製方法
US6576926B1 (en) * 1999-02-23 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JP4498489B2 (ja) * 1999-03-19 2010-07-07 シャープ株式会社 液晶表示装置とその製造方法
US7339568B2 (en) 1999-04-16 2008-03-04 Samsung Electronics Co., Ltd. Signal transmission film and a liquid crystal display panel having the same
US6630977B1 (en) * 1999-05-20 2003-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with capacitor formed around contact hole
JP4463934B2 (ja) 2000-04-05 2010-05-19 キヤノン株式会社 画像形成装置
JP2002040486A (ja) * 2000-05-19 2002-02-06 Seiko Epson Corp 電気光学装置、その製造方法および電子機器
JP2002076352A (ja) * 2000-08-31 2002-03-15 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
JP3741961B2 (ja) * 2001-02-13 2006-02-01 セイコーエプソン株式会社 駆動回路、及びアクティブマトリクスパネル
JPWO2002095834A1 (ja) * 2001-05-18 2004-09-09 三洋電機株式会社 薄膜トランジスタ及びアクティブマトリクス型表示装置及びそれらの製造方法
KR100776768B1 (ko) * 2001-07-21 2007-11-16 삼성전자주식회사 액정표시패널용 기판 및 그 제조방법
KR100846464B1 (ko) 2002-05-28 2008-07-17 삼성전자주식회사 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법
TWI382264B (zh) * 2004-07-27 2013-01-11 Samsung Display Co Ltd 薄膜電晶體陣列面板及包括此面板之顯示器裝置
US8330492B2 (en) * 2006-06-02 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8287320B2 (en) 2009-05-22 2012-10-16 John Mezzalingua Associates, Inc. Coaxial cable connector having electrical continuity member
KR101891590B1 (ko) * 2011-09-01 2018-08-27 삼성디스플레이 주식회사 게이트 구동회로, 이를 포함하는 표시 기판 및 표시 기판의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10207398A (ja) * 1997-01-24 1998-08-07 Sharp Corp アクティブマトリクス基板
JP2000187247A (ja) * 1998-12-24 2000-07-04 Sharp Corp 半導体回路基板
JP2000338521A (ja) * 1999-05-26 2000-12-08 Matsushita Electric Ind Co Ltd 駆動回路一体型の液晶表示装置用の基板
JP2002148645A (ja) * 2000-11-08 2002-05-22 Toshiba Corp 表示装置用電極基板

Also Published As

Publication number Publication date
US8619207B2 (en) 2013-12-31
US20190146260A1 (en) 2019-05-16
CN100478752C (zh) 2009-04-15
JP4533132B2 (ja) 2010-09-01
US20170017106A1 (en) 2017-01-19
TW200307167A (en) 2003-12-01
US10338443B2 (en) 2019-07-02
WO2003100511A1 (en) 2003-12-04
US20050263762A1 (en) 2005-12-01
TWI282478B (en) 2007-06-11
US9454049B2 (en) 2016-09-27
CN1618037A (zh) 2005-05-18
KR20030091571A (ko) 2003-12-03
US20080259237A1 (en) 2008-10-23
US6922217B2 (en) 2005-07-26
US7379148B2 (en) 2008-05-27
US10216053B2 (en) 2019-02-26
AU2002361508A1 (en) 2003-12-12
JP2005527856A (ja) 2005-09-15
US20030222311A1 (en) 2003-12-04
US20140106515A1 (en) 2014-04-17

Similar Documents

Publication Publication Date Title
KR100846464B1 (ko) 비정질실리콘 박막 트랜지스터-액정표시장치 및 그 제조방법
KR100776768B1 (ko) 액정표시패널용 기판 및 그 제조방법
KR100923056B1 (ko) 표시 장치 및 이의 제조방법
US6937314B2 (en) Liquid crystal display having terminals arranged for securing connection to driving circuit
US8956900B2 (en) Liquid crystal display device comprising first and second data link lines electrically connected to odd and even data lines respectively and crossing each other to connect even and odd data pad electrodes respectively
KR100602062B1 (ko) 수평 전계 인가형 액정 표시 장치 및 그 제조 방법
KR101359923B1 (ko) 표시 장치 및 그 구동 방법
JP2001051303A (ja) 液晶表示装置及びその製造方法
KR20150078248A (ko) 표시소자
KR20060068442A (ko) 표시장치용 박막트랜지스터 기판과 그 제조방법
KR101182302B1 (ko) 액정표시장치 및 이의 제조방법
KR20060028970A (ko) 박막 트랜지스터 표시판 및 액정 표시 장치
KR100446940B1 (ko) 액정표시장치용 박막 트랜지스터 및 그 제조방법
JP2001330854A (ja) 液晶表示装置
US20070063280A1 (en) Thin film transistor array substrate
KR20060028539A (ko) 박막 트랜지스터 표시판 및 액정 표시 장치
KR101035928B1 (ko) 액정표시장치 및 이의 제조방법
JP2024140297A (ja) トランジスタ、回路基板及び表示装置
JPH0359537A (ja) 液晶表示装置

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20020528

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20070528

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20020528

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20080227

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20080625

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20080709

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20080710

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20110614

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20120615

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20130628

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20130628

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20140701

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20140701

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20150701

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20150701

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20160629

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20160629

Start annual number: 9

End annual number: 9

FPAY Annual fee payment

Payment date: 20170704

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20170704

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20180702

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20180702

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20190701

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20190701

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20200701

Start annual number: 13

End annual number: 13

PC1801 Expiration of term

Termination date: 20221128

Termination category: Expiration of duration