KR100526731B1 - 표시 장치 및 그 제조 방법 - Google Patents

표시 장치 및 그 제조 방법 Download PDF

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Publication number
KR100526731B1
KR100526731B1 KR10-2002-0006535A KR20020006535A KR100526731B1 KR 100526731 B1 KR100526731 B1 KR 100526731B1 KR 20020006535 A KR20020006535 A KR 20020006535A KR 100526731 B1 KR100526731 B1 KR 100526731B1
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KR
South Korea
Prior art keywords
region
insulating film
channel region
drain
film
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Expired - Fee Related
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KR10-2002-0006535A
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English (en)
Korean (ko)
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KR20020065388A (ko
Inventor
다나베히데오
시모무라시게오
오꾸라마고또
구리따마사아끼
기무라야스까즈
나까무라다까오
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20020065388A publication Critical patent/KR20020065388A/ko
Application granted granted Critical
Publication of KR100526731B1 publication Critical patent/KR100526731B1/ko
Assigned to 가부시키가이샤 재팬 디스프레이 reassignment 가부시키가이샤 재팬 디스프레이 권리의 전부이전등록 Assignors: 가부시키가이샤 히타치세이사쿠쇼
Assigned to 파나소닉 액정 디스플레이 주식회사 reassignment 파나소닉 액정 디스플레이 주식회사 권리의 일부이전등록 Assignors: 가부시키가이샤 히타치 디스프레이즈
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6723—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having light shields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
KR10-2002-0006535A 2001-02-06 2002-02-05 표시 장치 및 그 제조 방법 Expired - Fee Related KR100526731B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00029050 2001-02-06
JP2001029050 2001-02-06
JP2002019751A JP4037117B2 (ja) 2001-02-06 2002-01-29 表示装置
JPJP-P-2002-00019751 2002-01-29

Publications (2)

Publication Number Publication Date
KR20020065388A KR20020065388A (ko) 2002-08-13
KR100526731B1 true KR100526731B1 (ko) 2005-11-09

Family

ID=26608966

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2002-0006535A Expired - Fee Related KR100526731B1 (ko) 2001-02-06 2002-02-05 표시 장치 및 그 제조 방법

Country Status (5)

Country Link
US (3) US6624443B2 (https=)
JP (1) JP4037117B2 (https=)
KR (1) KR100526731B1 (https=)
CN (1) CN1185533C (https=)
TW (1) TW583424B (https=)

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JP2005197618A (ja) 2004-01-09 2005-07-21 Nec Corp 薄膜トランジスタ、薄膜トランジスタの形成方法ならびに表示デバイス、電子機器
JP2005217368A (ja) * 2004-02-02 2005-08-11 Toshiba Matsushita Display Technology Co Ltd 薄膜トランジスタおよびその製造方法
KR100579188B1 (ko) 2004-02-12 2006-05-11 삼성에스디아이 주식회사 엘디디 구조를 갖는 박막트랜지스터
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CN100368911C (zh) * 2005-02-03 2008-02-13 广辉电子股份有限公司 液晶显示装置
CN100368912C (zh) * 2005-02-03 2008-02-13 广辉电子股份有限公司 液晶显示装置的制造方法
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KR100867921B1 (ko) * 2006-11-29 2008-11-10 삼성에스디아이 주식회사 박막 트랜지스터의 제조방법
KR100811997B1 (ko) * 2006-12-04 2008-03-10 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조방법과 이를 포함한평판표시장치
KR100836472B1 (ko) 2007-03-22 2008-06-09 삼성에스디아이 주식회사 반도체장치 및 그 제조방법
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CN103779206A (zh) * 2011-12-31 2014-05-07 广东中显科技有限公司 一种搭桥晶粒多晶硅薄膜晶体管及其制造方法
CN103762166A (zh) * 2011-12-31 2014-04-30 广东中显科技有限公司 精确对准的搭桥晶粒多晶硅薄膜晶体管的制造方法
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CN103178006B (zh) * 2013-03-29 2015-09-23 上海和辉光电有限公司 调整低温多晶硅晶体管阀值电压的方法
CN104240633B (zh) * 2013-06-07 2018-01-09 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及其制造方法
CN104241389B (zh) 2013-06-21 2017-09-01 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法
CN104241390B (zh) * 2013-06-21 2017-02-08 上海和辉光电有限公司 薄膜晶体管和有源矩阵有机发光二极管组件及制造方法
TWI653755B (zh) * 2013-09-12 2019-03-11 日商新力股份有限公司 顯示裝置、其製造方法及電子機器
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CN103531595B (zh) * 2013-10-31 2016-09-14 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管阵列基板及其制作方法、显示装置
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CN104779168B (zh) * 2015-04-13 2018-01-12 武汉华星光电技术有限公司 用于制作薄膜晶体管的方法
CN105870199A (zh) * 2016-05-26 2016-08-17 深圳市华星光电技术有限公司 薄膜晶体管、薄膜晶体管的制备方法及cmos器件
CN106711087A (zh) * 2016-12-26 2017-05-24 武汉华星光电技术有限公司 薄膜晶体管的制作方法
CN106847927A (zh) * 2017-01-23 2017-06-13 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法、液晶面板
CN107026178B (zh) * 2017-04-28 2019-03-15 深圳市华星光电技术有限公司 一种阵列基板、显示装置及其制作方法
KR20180137642A (ko) * 2017-06-16 2018-12-28 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
WO2019058485A1 (ja) * 2017-09-21 2019-03-28 シャープ株式会社 表示デバイス
CN107818948B (zh) * 2017-10-31 2020-04-17 京东方科技集团股份有限公司 一种阵列基板的制备方法
CN116247011B (zh) * 2023-05-10 2023-10-13 长鑫存储技术有限公司 半导体结构及其制造方法

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US20020104992A1 (en) 2002-08-08
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US6936847B2 (en) 2005-08-30
CN1185533C (zh) 2005-01-19
US7388228B2 (en) 2008-06-17
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