KR100867921B1 - 박막 트랜지스터의 제조방법 - Google Patents
박막 트랜지스터의 제조방법 Download PDFInfo
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- KR100867921B1 KR100867921B1 KR1020060119085A KR20060119085A KR100867921B1 KR 100867921 B1 KR100867921 B1 KR 100867921B1 KR 1020060119085 A KR1020060119085 A KR 1020060119085A KR 20060119085 A KR20060119085 A KR 20060119085A KR 100867921 B1 KR100867921 B1 KR 100867921B1
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- gate insulating
- gate electrode
- insulating film
- thin film
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- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 26
- 239000010408 film Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 55
- 239000011229 interlayer Substances 0.000 abstract description 16
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
- 기판을 제공하고,상기 기판상에 반도체층 패턴을 형성하고,상기 반도체층 패턴을 포함하는 기판 전면에 게이트 절연막을 형성하고,상기 게이트 절연막 상에 게이트 전극층을 형성하고,제1단계 식각공정을 진행하여 상기 게이트 전극층의 상기 반도체층 패턴의 채널영역으로 예정되는 영역과 대응되는 영역을 제외한 영역을 일정두께로 식각하고,제2단계 식각공정을 진행하여 상기 일정두께로 식각된 게이트 전극층을 전부 식각하여 게이트 전극을 형성하고, 이와 동시에 상기 일정두께로 식각된 게이트 전극층과 대응되는 영역의 게이트 절연막을 일정두께로 식각하는 것을 포함하되,상기 제2단계 식각공정에 의하여, 상기 게이트 절연막은 상기 게이트 전극의 에지부와 접촉하는 영역으로부터 상기 게이트 전극이 상기 게이트 절연막과 접촉하지 않는 영역 방향으로 일정영역에 테이퍼진 단차영역이 형성되는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제1항에 있어서,상기 게이트 절연막을 형성한 이후에, 상기 반도체층 패턴 상에 채널영역으로 예정되는 영역과 대응하는 영역에 포토레지스트 막을 형성하고, 상기 포토레지스트 막을 마스크로 하여, 불순물을 주입하여 소오스/드레인 영역을 형성하는 것을 더 포함하는 박막트랜지스터의 제조방법.
- 제1항에 있어서,상기 제2단계 식각공정을 진행한 이후에, 상기 게이트 전극을 마스크로 하여 불순물을 주입하되, 상기 테이퍼진 단차영역이 형성된 게이트 절연막과 대응하는 상기 반도체층의 패턴에는 엘디디 영역을 형성하는 것을 더 포함하는 박막트랜지스터의 제조방법.
- 제1항에 있어서,상기 제1단계 식각공정은 SF6와 CF4 기체를 사용하여 100m Torr 내지 200m Torr의 공정압력의 조건으로 진행하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제1항에 있어서,상기 제2단계 식각공정은 Cl2 기체를 사용하여 50m Torr 내지 100m Torr의 공정압력의 조건으로 진행하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제3항에 있어서,상기 테이퍼진 단차영역의 넓이는 상기 엘디디 영역의 넓이보다 작거나 동일한 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제1항에 있어서,상기 테이퍼는 1.2도 이상 90도 미만의 각도로 형성되는 것을 특징으로 하는 박막트랜지스터의 제조방법.
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KR1020060119085A KR100867921B1 (ko) | 2006-11-29 | 2006-11-29 | 박막 트랜지스터의 제조방법 |
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KR1020060119085A KR100867921B1 (ko) | 2006-11-29 | 2006-11-29 | 박막 트랜지스터의 제조방법 |
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KR20080048734A KR20080048734A (ko) | 2008-06-03 |
KR100867921B1 true KR100867921B1 (ko) | 2008-11-10 |
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Families Citing this family (2)
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KR102091444B1 (ko) | 2013-10-08 | 2020-03-23 | 삼성디스플레이 주식회사 | 표시 기판 및 표시 기판의 제조 방법 |
KR20170131787A (ko) * | 2016-05-20 | 2017-11-30 | 삼성디스플레이 주식회사 | 박막트랜지스터의 제조방법 및 박막트랜지스터를 채용하는 표시장치 |
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KR20020035461A (ko) * | 2000-11-06 | 2002-05-11 | 야마자끼 순페이 | 전기 광학 장치 및 그 제조 방법 |
KR20020041782A (ko) * | 2000-11-28 | 2002-06-03 | 야마자끼 순페이 | 반도체 장치 및 그 제조 방법 |
KR20020065388A (ko) * | 2001-02-06 | 2002-08-13 | 가부시키가이샤 히타치세이사쿠쇼 | 표시 장치 및 그 제조 방법 |
KR20050117128A (ko) * | 2004-06-09 | 2005-12-14 | 삼성에스디아이 주식회사 | 엘디디 구조를 갖는 박막트랜지스터 및 그의 제조방법 |
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KR20020035461A (ko) * | 2000-11-06 | 2002-05-11 | 야마자끼 순페이 | 전기 광학 장치 및 그 제조 방법 |
KR20020041782A (ko) * | 2000-11-28 | 2002-06-03 | 야마자끼 순페이 | 반도체 장치 및 그 제조 방법 |
KR20020065388A (ko) * | 2001-02-06 | 2002-08-13 | 가부시키가이샤 히타치세이사쿠쇼 | 표시 장치 및 그 제조 방법 |
JP2002313810A (ja) * | 2001-02-06 | 2002-10-25 | Hitachi Ltd | 表示装置およびその製造方法 |
KR20050117128A (ko) * | 2004-06-09 | 2005-12-14 | 삼성에스디아이 주식회사 | 엘디디 구조를 갖는 박막트랜지스터 및 그의 제조방법 |
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