TWI567452B - 液晶顯示裝置及其元件基板 - Google Patents
液晶顯示裝置及其元件基板 Download PDFInfo
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- TWI567452B TWI567452B TW103124494A TW103124494A TWI567452B TW I567452 B TWI567452 B TW I567452B TW 103124494 A TW103124494 A TW 103124494A TW 103124494 A TW103124494 A TW 103124494A TW I567452 B TWI567452 B TW I567452B
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- 239000000758 substrate Substances 0.000 title claims description 48
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 36
- 239000002184 metal Substances 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 2
- 230000001568 sexual effect Effects 0.000 claims 1
- 239000012780 transparent material Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1343—Electrodes
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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Description
本發明係有關於一種液晶顯示裝置,特別係有關於一種,具有接觸孔之液晶顯示裝置。
在液晶顯示裝置之中,接觸孔常用於導通像素電極以及源極電極。然而,參照第1圖,液晶分子2會隨著接觸孔1的輪廓排列,由於接觸孔1設計的剖面形狀往往為上寬下窄的弧形結構,因此隨著接觸孔1輪廓排列的液晶分子2容易造成漏光現象,而使得液晶顯示裝置的對比度降低。
參照第1圖,在習知技術中,透過增加接觸孔1底部之源極電極3的面積,可以將產生問題的液晶分子2遮蔽,從而提昇液晶顯示裝置的對比度。然而,此方式會降低液晶顯示裝置的開口率,從而損失液晶顯示裝置的亮度。因此一昧的增大源極電極3的面積,並非良好的問題解決方案。
本發明係為了欲解決習知技術之問題而提供之一種元件基板,包括一基板、一金屬層以及一平坦層。金屬層位於該基板上,其中該金屬層沿一第一方向具有一第一寬度。平坦層位於該金屬層上,其中該平坦層具有一接觸孔,該接觸孔具有一連續壁面以及一底面,該底面暴露該金屬層,其中該底面沿該第一
方向具有一第二寬度。其中,該第一寬度與第二寬度需滿足以下之公式:
其中,L1為該第二金屬層沿該第一方向之該第一寬度,L2為該接觸孔之底面沿該第一方向之該第二寬度,h為該平坦層之厚度,θ為連續壁面之一預設參考點與一基點之間之一直線與該底面的一延伸面的夾角,其中,該預設參考點位於該連續壁面上,且該預設參考點與該平坦層之一底面之垂直距離為0.95h,該基點為該連續壁面與該底面的交界位置。
本發明亦提供一種元件基板,包括一基板、一金屬層以及一平坦層。金屬層位於該基板上,其中該金屬層沿一第一方向具有一第一邊緣。平坦層位於該金屬層上,其中該平坦層具有一接觸孔,該接觸孔具有一連續壁面以及一底面,該底面暴露該金屬層,連續壁面在一垂直截面上的一輪廓線為曲線,該第一邊緣在一垂直方向上對應該輪廓線之一臨界點,該輪廓線於該臨界點上的切線斜率小於0.176。其中,該金屬層沿一第一方向具有一第一寬度,其中該底面沿該第一方向具有一第二寬度,其中,該第一寬度與第二寬度需滿足以下之公式:
其中,L1為該第二金屬層沿該第一方向之該第一寬度,L2為該接觸孔之底面沿該第一方向之該第二寬度,θ為連續壁面的一預設參考點與一基點之間的一直線與水平面的夾角,其中,該預設參
考點為該連續壁面上距離該底面位置,(1-p)h為該臨界點於該垂直方向上的高度,p≦0.1。
應用本發明之實施例,液晶顯示裝置的開口率與透光率(暗態下的對比)可達到最佳化的狀態,避免了漏光以及對比度降低等問題的產生。
1‧‧‧接觸孔
2‧‧‧液晶分子
3‧‧‧源極電極
100‧‧‧元件基板
110‧‧‧基板
120‧‧‧金屬層
121‧‧‧第一邊緣
130‧‧‧平坦層
131、131’、131”‧‧‧接觸孔
132‧‧‧連續壁面
133‧‧‧底面
134‧‧‧預設參考點
135‧‧‧基點
136‧‧‧臨界點
137‧‧‧半導體層
140‧‧‧導電層
150‧‧‧液晶層
200‧‧‧液晶顯示裝置
201‧‧‧掃瞄線
202‧‧‧信號線
203‧‧‧半導體層
204‧‧‧汲極電極
205‧‧‧共用電極
210‧‧‧像素晶體
222‧‧‧閘絕緣層
231‧‧‧接觸孔
233‧‧‧接觸孔之底面
240‧‧‧源極電極
250‧‧‧液晶層
260‧‧‧對向基板
L1‧‧‧第一寬度
L2‧‧‧第二寬度
h‧‧‧厚度
θ‧‧‧夾角
β‧‧‧夾角
A‧‧‧顯示區
B‧‧‧非顯示區
L‧‧‧直線
L’‧‧‧切線
第1圖係顯示習知液晶顯示裝置的元件基板。
第2圖係顯示本發明一實施例之元件基板。
第3A圖係顯示本發明實施例之元件基板應用於一液晶顯示裝置。
第3B圖係顯示第3A圖中之3B部分之細部元件。
第4圖係顯示本發明一變形例之元件基板。
第5圖係顯示應用本發明實施例之液晶顯示裝置。
第6圖係顯示依據本發明之接觸孔的預設值與實際值比對表。
參照第2圖,其係顯示本發明一實施例之元件基板100,包括一基板110、一金屬層120以及一平坦層130。金屬層120位於該基板110上,其中在一第一方向X的一剖面上,該金屬層120沿第一方向X具有一第一寬度L1。平坦層130位於該金屬層120上,其中該平坦層130具有一接觸孔131,該接觸孔131具有一連續壁面132以及一底面133,該底面133暴露該金屬層120,其中該底面133沿該第一方向X具有一第二寬度L2。
申請人發現,液晶分子係沿連續壁面132排列,穿透率(暗態下的對比)隨連續壁面132的斜率漸變而改變。當連續壁面132的切線斜率約等於tan10°時,此處的液晶分子將不會發生嚴重的漏光情形,因此不會降低液晶顯示裝置的對比度。就設計上的角度來看,金屬層120對接觸孔131的遮蔽,僅僅需要達到在臨界點136之位置,相當於連續壁面132的切線斜率約等於tan10°的位置,液晶顯示裝置的開口率與透光率(暗態下的對比)即達到最佳化的狀態,以符合市場需求。
再參照第2圖,申請人透過曲線公式的推導得知,當該第一寬度與第二寬度需滿足以下之公式時,液晶顯示裝置的開口率與透光率可達到最佳化的狀態:
其中,L1為該金屬層120沿該第一方向X之該第一寬度,L2為該接觸孔131之底面沿該第一方向X之該第二寬度,h為該平坦層130之厚度,θ為連續壁面132之一預設參考點134與一基點135之間之一直線L與該底面的一延伸面的夾角,其中,該預設參考點134位於該連續壁面132上,且該預設參考點134與該平坦層130之一底面之垂直距離為0.95h,該基點135為該連續壁面132與該底面133的交界位置。其中,±1.8為製程中公差容許值。依照上述各參數之調整,連續壁面132的曲率以及形狀可適度變化。
參照第2圖,曲線公式的推導過程如下:
第一步,曲線公式擬合(假設),假設該接觸孔的連續壁面之斜面方程式滿足下列公式:
y=f(x)=-A’exp(-x).....(1)
由方程式(1)中,僅是定義出該接觸孔的連續壁面的漸進線,因此方程式(1)需對x以及y進行校正。
第二步,曲線公式擬合(對通過預設參考點134、基點135以及角度θ校正),假設斜坡上之預設參考點134為距離平坦層頂部的深度總深度h的p倍,且滿足f(R’)關係式,其中,該預設參考點134距離基點135的水平距離為R’,則
得到校正參數α
第三步,預設參考點134與基點135的連線形成一直線L,該直線L與相對於水平線的夾角為θ
引入材料特徵θ
第四步,距離平坦層頂部的深度總深度h的0.05倍,公式(2)與公式(3)聯立可得:
得到校正參數α
第五步,因決定平坦層130曲線的角度應為基點135的切線L’與相對於水平線的夾角β,而夾角β約略等於1.5θ,因此需對再曲線公式校正(對角度校正),則可得:
接觸孔曲線方程式
第六步,其中R=R0+R’,並帶回原方程式可得:
接觸孔實際曲線方程式
第七步,推得金屬層120沿該第一方向之該第二寬度的一半
因在製程的過程中會有誤差,而±1.8為製程中公差容許值,因此彙整上述公式可得到液晶顯示裝置的開口率與透光率可達到最佳化的狀態公式:
在一實施例中,該夾角θ介於20~40度之間,例如,該夾角θ介於25~35度之間。
參照第2圖,元件基板100更包含一導電層140位於該平坦層130上,並透過該接觸孔131與該金屬層120電性連接。該導電層140可以為透明導電材料或金屬材料。
該金屬層120可以為一驅動元件之源極電極或汲極電極。在一實施例中,元件基板100更包含一半導體層137位於該金屬層120與該基板110之間。該半導體層137之材料可以為多晶矽材料、非晶矽材料或金屬氧化物材料。
參照第3A圖,本發明實施例之元件基板應用於一液晶顯示裝置200,其包括一顯示區(像素區域)A以及一非顯示區B。參照第3B圖,其係顯示第3A圖中之3B部分之細部元件,液晶顯示裝置200更包括掃瞄線201、信號線202、半導體層203、源極電極240、接觸孔231、接觸孔之底面233、汲極電極204、共用電極205以及畫素電極210等等元件於顯示區A內。本發明實施例中,該金屬層120包含源極電極240、汲極電極204、掃描線201以及信號線202。
再參照第2圖,在另一實施例中,該金屬層120沿第一方向X具有一第一邊緣121,連續壁面132在一垂直截面上的一輪廓線為曲線,該第一邊緣121在一垂直方向上對應該輪廓線之臨界點136,該輪廓線於該臨界點136上的切線斜率小於0.176(tan10°)。相似於前述實施例,一基點135位於該連續壁面132
與該底面133在該垂直截面上的交界位置,該基點135與該預設參考點134位於一直線L之上,θ為該直線L與一水平面的夾角,其中該夾角θ介於20~40度之間,例如,該夾角θ介於25~35度之間。該金屬層120沿第一方向X具有一第一寬度L1,其中該底面133沿該第一方向X具有第二寬度L2,其中,該第一寬度L1與第二寬度L2需滿足以下之公式:
其中,L1為該第二金屬層沿該第一方向之該第一寬度,L2為該接觸孔之底面沿該第一方向之該第二寬度,p為可調整參數,θ為連續壁面的一預設參考點與一基點之間的一直線與水平面的夾角,其中,該預設參考點為該連續壁面上距離該底面位置,(1-p)h為該預設參考點於該垂直方向上的高度,0<p≦0.1,例如,0<p≦0.05。依照上述各參數之調整,連續壁面132的曲率以及形狀可適度變化。
雖然在上述實施例中,接觸孔位於顯示區(像素區域)A之中,然而,上述揭露並未限制本發明。本發明之接觸孔結構亦可用於非顯示區B之中。例如,參照第4圖,在一實施例中,本發明之接觸孔131’內的導電層140可連接信號線202,而接觸孔131’的輪廓與信號線202的寬度之間可符合上述公式,並且透過在平坦層130與閘絕緣層222上的接觸孔131”連接掃描線201,其中接觸孔131”的輪廓與掃描線201的寬度之間可符合上述公式。在上述實施例中,閘絕緣層222形成於信號線202與掃描線201之間。
參照第5圖,其係顯示應用本發明實施例之液晶顯示裝置200,包括元件基板100、液晶層250以及對向基板260。
參照以下比對表1以及第6圖,由以下比對表以及第6圖可知,依照本發明實施例所預設之金屬層(M2)120寬度,在製造中,會有實際製程上的誤差落入±1.8的公差容許範圍。
應用本發明之實施例,液晶顯示裝置的開口率與透光率(暗態下的對比)可達到最佳化的狀態,避免了漏光以及對比度降低等問題的產生。
雖然本發明已以具體之較佳實施例揭露如上,然其並非用以限定本發明,任何熟習此項技術者,在不脫離本發明之精神和範圍內,仍可作些許的更動與潤飾,因此本發明之保護範
圍當視後附之申請專利範圍所界定者為準。
100‧‧‧元件基板
110‧‧‧基板
120‧‧‧金屬層
121‧‧‧第一邊緣
130‧‧‧平坦層
131‧‧‧接觸孔
132‧‧‧連續壁面
133‧‧‧底面
134‧‧‧臨界點
135‧‧‧基點
136‧‧‧臨界點
137‧‧‧半導體層
140‧‧‧導電層
L1‧‧‧第一寬度
L2‧‧‧第二寬度
h‧‧‧厚度
θ‧‧‧夾角
β‧‧‧夾角
L‧‧‧直線
L’‧‧‧切線
Claims (18)
- 一種元件基板,包括:一基板;一金屬層,位於該基板上;以及一平坦層,位於該金屬層上,其中該平坦層具有一接觸孔,該接觸孔具有一連續壁面以及一底面,該底面暴露該金屬層,其中,在一第一方向的一剖面上,該金屬層沿該第一方向具有一第一寬度L1,該底面沿該第一方向具有一第二寬度L2,該第一寬度L1與第二寬度L2係滿足以下之公式:
- 如申請專利範圍第1項所述之元件基板,其中該可調整參數p為0.05。
- 如申請專利範圍第1項所述之元件基板,其中該夾角θ介於20~40度之間。
- 如申請專利範圍第1項所述之元件基板,其中該夾角θ介於 25~35度之間。
- 如申請專利範圍第1項所述之元件基板,其更包含,一導電層位於該平坦層上,並透過該接觸孔與該金屬層電性連接。
- 如申請專利範圍第1項所述之元件基板,其中該金屬層為一驅動元件之源極電極或汲極電極。
- 如申請專利範圍第1項所述之元件基板,其中該金屬層為一驅動元件之信號線或掃描線。
- 如申請專利範圍第5項所述之元件基板,其中該導電層為一一透明材料。
- 如申請專利範圍第1項所述之元件基板,其更包含,一半導體層位於該金屬層與該基板之間。
- 如申請專利範圍第9項所述之元件基板,其中該半導體層之材料為多晶矽、非晶矽或金屬氧化物。
- 如申請專利範圍第5項所述之元件基板,其中該導電層為一金屬材料。
- 一種液晶顯示裝置,包括:一對向基板;一元件基板,相對於該對向基板;一液晶層,位於該對向基板以及該元件基板之間;其中,該元件基板包括:一基板;一金屬層,位於該基板上;以及 一平坦層,位於該金屬層上,其中該平坦層具有一接觸孔,該接觸孔具有一連續壁面以及一底面,該底面暴露該金屬層,其中,在一第一方向的一剖面上,該金屬層沿該第一方向具有一第一寬度L1,該底面沿該第一方向具有一第二寬度L2,,該第一寬度L1與第二寬度L2係滿足以下之公式:
- 如申請專利範圍第12項所述之液晶顯示裝置,其中該可調整參數p為0.05。
- 如申請專利範圍第12項所述之液晶顯示裝置,其中該夾角θ介於20~40度之間。
- 如申請專利範圍第12項所述之液晶顯示裝置,其中該夾角θ介於25~35度之間。
- 如申請專利範圍第12項所述之液晶顯示裝置,其更包含,一導電層位於該平坦層上,並透過該接觸孔與該金屬層電 性連接。
- 如申請專利範圍第12項所述之液晶顯示裝置,其更包含,一半導體層位於該金屬層與該基板之間。
- 如申請專利範圍第17項所述之液晶顯示裝置,其中該半導體層之材料為多晶矽、非晶矽或金屬氧化物。
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US14/493,173 US9360725B2 (en) | 2014-07-17 | 2014-09-22 | Liquid-crystal display and element substrate thereof |
KR1020150027535A KR101705435B1 (ko) | 2014-07-17 | 2015-02-26 | 액정 디스플레이 및 그 엘리먼트 기판 |
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JP2000206561A (ja) | 1999-01-08 | 2000-07-28 | Matsushita Electric Ind Co Ltd | 液晶表示装置の製造方法および液晶表示装置 |
JP4037117B2 (ja) * | 2001-02-06 | 2008-01-23 | 株式会社日立製作所 | 表示装置 |
JP2005234091A (ja) * | 2004-02-18 | 2005-09-02 | Hitachi Displays Ltd | 表示装置 |
KR20060126167A (ko) * | 2005-06-03 | 2006-12-07 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 및그에 의해 제조된 박막 트랜지스터 기판 |
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WO2009128123A1 (ja) * | 2008-04-14 | 2009-10-22 | シャープ株式会社 | 液晶表示パネル |
US8953122B2 (en) * | 2009-06-18 | 2015-02-10 | Japan Display Inc. | Liquid crystal display device and manufacturing method for same |
KR101382119B1 (ko) * | 2012-04-19 | 2014-04-09 | 실리콘 디스플레이 (주) | 터치센서가 내장된 박막트랜지스터 디스플레이 장치 및 그 제조 방법 |
JP2014149518A (ja) * | 2013-01-11 | 2014-08-21 | Panasonic Liquid Crystal Display Co Ltd | 表示装置 |
JP6347937B2 (ja) * | 2013-10-31 | 2018-06-27 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
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US6147722A (en) * | 1996-08-05 | 2000-11-14 | Sharp Kabushiki Kaisha | Liquid crystal display device with contact hole over shading line but offset from center |
US6136624A (en) * | 1997-03-07 | 2000-10-24 | Kabushiki Kaisha Toshiba | Array substrate, liquid crystal display device and their manufacturing method |
TW201213944A (en) * | 2010-09-20 | 2012-04-01 | Lg Display Co Ltd | Liquid crystal display device and method for manufacturing the same |
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