TW201604614A - 液晶顯示裝置及其元件基板 - Google Patents

液晶顯示裝置及其元件基板 Download PDF

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TW201604614A
TW201604614A TW103124494A TW103124494A TW201604614A TW 201604614 A TW201604614 A TW 201604614A TW 103124494 A TW103124494 A TW 103124494A TW 103124494 A TW103124494 A TW 103124494A TW 201604614 A TW201604614 A TW 201604614A
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metal layer
layer
substrate
width
liquid crystal
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TW103124494A
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TWI567452B (zh
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鍾岳庭
陳俊宇
許紹武
盧永信
王兆祥
邱冠宇
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群創光電股份有限公司
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Priority to TW103124494A priority Critical patent/TWI567452B/zh
Priority to JP2014004921U priority patent/JP3194536U/ja
Priority to US14/493,173 priority patent/US9360725B2/en
Priority to KR1020150027535A priority patent/KR101705435B1/ko
Priority to US15/003,596 priority patent/US9543335B2/en
Publication of TW201604614A publication Critical patent/TW201604614A/zh
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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Abstract

一種元件基板，包括一基板、一金屬層以及一平坦層。金屬層位於該基板上，其中該金屬層沿一第一方向具有一第一邊緣。平坦層位於該金屬層上，其中該平坦層具有一接觸孔，該接觸孔具有一連續壁面以及一底面，該底面暴露該金屬層，連續壁面在一垂直截面上的一輪廓線為曲線，該第一邊緣在一垂直方向上對應該輪廓線之一臨界點，該輪廓線於該臨界點上的切線斜率小於0.176。

Description

液晶顯示裝置及其元件基板
本發明係有關於一種液晶顯示裝置，特別係有關於一種，具有接觸孔之液晶顯示裝置。
在液晶顯示裝置之中，接觸孔常用於導通像素電極以及源極電極。然而，參照第1圖，液晶分子2會隨著接觸孔1的輪廓排列，由於接觸孔1設計的剖面形狀往往為上寬下窄的弧形結構，因此隨著接觸孔1輪廓排列的液晶分子2容易造成漏光現象，而使得液晶顯示裝置的對比度降低。
參照第1圖，在習知技術中，透過增加接觸孔1底部之源極電極3的面積，可以將產生問題的液晶分子2遮蔽，從而提昇液晶顯示裝置的對比度。然而，此方式會降低液晶顯示裝置的開口率，從而損失液晶顯示裝置的亮度。因此一昧的增大源極電極3的面積，並非良好的問題解決方案。
本發明係為了欲解決習知技術之問題而提供之一種元件基板，包括一基板、一金屬層以及一平坦層。金屬層位於該基板上，其中該金屬層沿一第一方向具有一第一寬度。平坦層位於該金屬層上，其中該平坦層具有一接觸孔，該接觸孔具有一連續壁面以及一底面，該底面暴露該金屬層，其中該底面沿該第一 方向具有一第二寬度。其中，該第一寬度與第二寬度需滿足以下之公式： 其中，L1為該第二金屬層沿該第一方向之該第一寬度，L2為該接觸孔之底面沿該第一方向之該第二寬度，h為該平坦層之厚度，θ為連續壁面之一預設參考點與一基點之間之一直線與水平面的夾角，其中，該預設參考點為該連續壁面上距離該底面0.95h之位置，該基點為該連續壁面與該底面的交界位置。
本發明亦提供一種元件基板，包括一基板、一金屬層以及一平坦層。金屬層位於該基板上，其中該金屬層沿一第一方向具有一第一邊緣。平坦層位於該金屬層上，其中該平坦層具有一接觸孔，該接觸孔具有一連續壁面以及一底面，該底面暴露該金屬層，連續壁面在一垂直截面上的一輪廓線為曲線，該第一邊緣在一垂直方向上對應該輪廓線之一臨界點，該輪廓線於該臨界點上的切線斜率小於0.176。其中，該金屬層沿一第一方向具有一第一寬度，其中該底面沿該第一方向具有一第二寬度，其中，該第一寬度與第二寬度需滿足以下之公式： 其中，L1為該第二金屬層沿該第一方向之該第一寬度，L2為該接觸孔之底面沿該第一方向之該第二寬度，(1-p)h為該臨界點於該垂直方向上的高度，p≦0.1。
應用本發明之實施例，液晶顯示裝置的開口率與透 光率(暗態對比)可達到最佳化的狀態，避免了漏光以及對比度降低等問題的產生。
1‧‧‧接觸孔
2‧‧‧液晶分子
3‧‧‧源極電極
100‧‧‧元件基板
110‧‧‧基板
120‧‧‧金屬層
121‧‧‧第一邊緣
130‧‧‧平坦層
131、131’、131”‧‧‧接觸孔
132‧‧‧連續壁面
133‧‧‧底面
134‧‧‧預設參考點
135‧‧‧基點
136‧‧‧臨界點
137‧‧‧半導體層
140‧‧‧導電層
150‧‧‧液晶層
200‧‧‧液晶顯示裝置
201‧‧‧掃瞄線
202‧‧‧信號線
203‧‧‧半導體層
204‧‧‧汲極電極
205‧‧‧對向電極
210‧‧‧薄膜電晶體
222‧‧‧閘絕緣層
231‧‧‧接觸孔
233‧‧‧接觸孔之底面
240‧‧‧源極電極
250‧‧‧液晶層
260‧‧‧對向基板
L1‧‧‧第一寬度
L2‧‧‧第二寬度
h‧‧‧厚度
θ‧‧‧夾角
β‧‧‧夾角
A‧‧‧顯示區
B‧‧‧非顯示區
L‧‧‧直線
L’‧‧‧切線
第1圖係顯示習知液晶顯示裝置的元件基板。
第2圖係顯示本發明一實施例之元件基板。
第3A圖係顯示本發明實施例之元件基板應用於一液晶顯示裝置。
第3B圖係顯示第3A圖中之3B部分之細部元件。
第4圖係顯示本發明一變形例之元件基板。
第5圖係顯示應用本發明實施例之液晶顯示裝置。
第6圖係顯示依據本發明之接觸孔的預設值與實際值比對表。
參照第2圖，其係顯示本發明一實施例之元件基板100，包括一基板110、一金屬層120以及一平坦層130。金屬層120位於該基板110上，其中該金屬層120沿一第一方向X具有一第一寬度L1。平坦層130位於該金屬層120上，其中該平坦層130具有一接觸孔131，該接觸孔131具有一連續壁面132以及一底面133，該底面133暴露該金屬層120，其中該底面133沿該第一方向X具有一第二寬度L2。
申請人發現，液晶分子係沿連續壁面132排列，穿透率(暗態對比)隨連續壁面132的斜率漸變而改變。當連續壁面132的切線斜率約等於tan10°時，此處的液晶分子將不會發生嚴重的 漏光情形，因此不會降低液晶顯示裝置的對比度。就設計上的角度來看，金屬層120對接觸孔131的遮蔽，僅僅需要達到在臨界點136之位置，相當於連續壁面132的切線斜率約等於tan10°的位置，液晶顯示裝置的開口率與透光率(暗態對比)即達到最佳化的狀態，以符合市場需求。
再參照第2圖，申請人透過曲線公式的推導得知，當該第一寬度與第二寬度需滿足以下之公式時，液晶顯示裝置的開口率與透光率可達到最佳化的狀態： 其中，L1為該金屬層120沿該第一方向X之該第一寬度，L2為該接觸孔131之底面沿該第一方向X之該第二寬度，h為該平坦層130之厚度，θ為連續壁面132之一預設參考點134與一基點135之間之一直線L與水平面的夾角，其中，該預設參考點134為該連續壁面132上距離該底面0.95h之位置，該基點135為該連續壁面132與該底面133的交界位置。其中，±1.8為製程中公差容許值。依照上述各參數之調整，連續壁面132的曲率以及形狀可適度變化。
參照第2圖，曲線公式的推導過程如下：
第一步，曲線公式擬合(假設)，假設該接觸孔離連續壁面之斜面方程式滿足下列公式：y=f(x)=-A’exp(-x).....(1)
由方程式(1)中，僅是定義出該接觸孔離連續壁面的漸進線，因此方程式(1)需對x以及y進行校正。
第二步，曲線公式擬合(對通過預設參考點134、基點 135以及角度θ校正)，假設斜坡上之預設參考點134為距離平坦層頂部的深度總深度h的p倍，且滿足f(R’)關係式，其中，該預設參考點134距離基點135的水平距離為R’，則
得到校正參數α
第三步，預設參考點134與基點135的連線形成一直線L，該直線L與相對於水平線的夾角為θ
引入材料特徵θ
第四步，距離平坦層頂部的深度總深度h的0.05倍，公式(2)與公式(3)聯立可得：
得到校正參數α
第五步，因決定平坦層130曲線的角度應為基點135的切線L’與相對於水平線的夾角β，而夾角β約略等於1.5θ，因此需對再曲線公式校正(對角度校正)，則可得：
接觸孔曲線方程式
第六步，其中R=R0+R’，並帶回原方程式可得：
接觸孔實際曲線方程式
第七步，推得金屬層120沿該第一方向之該第二寬度的一半
因在製程的過程中會有誤差，而±1.8為製程中公差容許值，因此彙整上述公式可得到液晶顯示裝置的開口率與透光率可達到最佳化的狀態公式：
在一實施例中，該夾角θ介於20~40度之間，例如，該夾角θ介於25~35度之間。
參照第2圖，元件基板100更包含一導電層140位於該平坦層130上，並透過該接觸孔131與該金屬層120電性連接。該導電層140可以為透明導電材料或金屬材料。
該金屬層120可以為一驅動元件之源極電極或汲極電極。在一實施例中，元件基板100更包含一半導體層137位於該金屬層120與該基板110之間。該半導體層137之材料可以為多晶矽材料、非晶矽材料或金屬氧化物材料。
參照第3A圖，本發明實施例之元件基板應用於一液晶顯示裝置200，其包括一顯示區(像素區域)A以及一非顯示區B。參照第3B圖，其係顯示第3A圖中之3B部分之細部元件，液晶顯示裝置200更包括掃瞄線201、信號線202、半導體層203、源極電極240、接觸孔231、接觸孔之底面233、汲極電極204、共用電極205以及畫素電極140等等元件於顯示區A內。本發明實施例中，該金屬層120包含源極電極240、汲極電極204、掃描線201以及信號線202。
再參照第2圖，在另一實施例中，該金屬層120沿第一方向X具有一第一邊緣121，連續壁面132在一垂直截面上的一輪廓線為曲線，該第一邊緣121在一垂直方向上對應該輪廓線之臨界點136，該輪廓線於該臨界點136上的切線斜率小於0.176(tan10°)。相似於前述實施例，一基點135位於該連續壁面132與該底面133在該垂直截面上的交界位置，該基點135與該預設參考點134位於一直線L之上，θ為該直線L與一水平面的夾角，其中該夾角θ介於20~40度之間，例如，該夾角θ介於25~35度之間。該金屬層120沿第一方向X具有一第一寬度L1，其中該底面133 沿該第一方向X具有第二寬度L2，其中，該第一寬度L1與第二寬度L2需滿足以下之公式： 其中，L1為該第二金屬層沿該第一方向之該第一寬度，L2為該接觸孔之底面沿該第一方向之該第二寬度，p為可調整參數，(1-p)h為該預設參考點於該垂直方向上的高度，0<p≦0.1，例如，0<p≦0.05。依照上述各參數之調整，連續壁面132的曲率以及形狀可適度變化。
雖然在上述實施例中，接觸孔位於顯示區(像素區域)A之中，然而，上述揭露並未限制本發明。本發明之接觸孔結構亦可用於非顯示區B之中。例如，參照第4圖，在一實施例中，本發明之接觸孔131’內的導電層140可連接信號線202，而接觸孔131’的輪廓與信號線202的寬度之間可符合上述公式，並且透過在平坦層130與閘絕緣層222上的接觸孔131”連接掃描線201，其中接觸孔131”的輪廓與掃描線201的寬度之間可符合上述公式。在上述實施例中，閘絕緣層222形成於信號線202與掃描線201之間。
參照第5圖，其係顯示應用本發明實施例之液晶顯示裝置200，包括元件基板100、液晶層250以及對向基板260。
參照以下比對表1以及第6圖，由以下比對表以及第6圖可知，依照本發明實施例所預設之金屬層(M2)120寬度，在製造中，會有實際製程上的誤差落入±1.8的公差容許範圍。
應用本發明之實施例，液晶顯示裝置的開口率與透光率(暗態對比)可達到最佳化的狀態，避免了漏光以及對比度降低等問題的產生。
雖然本發明已以具體之較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此項技術者，在不脫離本發明之精神和範圍內，仍可作些許的更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧元件基板
110‧‧‧基板
120‧‧‧金屬層
121‧‧‧第一邊緣
130‧‧‧平坦層
131‧‧‧接觸孔
132‧‧‧連續壁面
133‧‧‧底面
134‧‧‧臨界點
135‧‧‧基點
136‧‧‧臨界點
137‧‧‧半導體層
140‧‧‧導電層
L1‧‧‧第一寬度
L2‧‧‧第二寬度
h‧‧‧厚度
θ‧‧‧夾角
β‧‧‧夾角
L‧‧‧直線
L’‧‧‧切線

Claims (18)

  1. 一種元件基板，包括：一基板；一金屬層，位於該基板上，其中該金屬層沿一第一方向具有一第一寬度；以及一平坦層，位於該金屬層上，其中該平坦層具有一接觸孔，該接觸孔具有一連續壁面以及一底面，該底面暴露該金屬層，其中該底面沿該第一方向具有一第二寬度，其中，該第一寬度與第二寬度係滿足以下之公式： 其中，L1為該金屬層沿該第一方向之該第一寬度，L2為該接觸孔之底面沿該第一方向之該第二寬度，h為該平坦層之厚度，θ為連續壁面之一預設參考點與一基點之間之一直線與該底面的夾角，其中，該預設參考點為該連續壁面上距離該底面0.95h之位置，該基點為該連續壁面與該底面的交界位置，p為可調整參數，(1-p)h為該預設參考點於該垂直方向上的高度，0<p≦0.1。
  2. 如申請專利範圍第1項所述之元件基板，其中該可調整參數p為0.05。
  3. 如申請專利範圍第1項所述之元件基板，其中該夾角θ介於20~40度之間。
  4. 如申請專利範圍第1項所述之元件基板，其中該夾角θ介於 25~35度之間。
  5. 如申請專利範圍第1項所述之元件基板，其更包含，一導電層位於該平坦層上，並透過該接觸孔與該金屬層電性連接。
  6. 如申請專利範圍第1項所述之元件基板，其中該金屬層為一驅動元件之源極電極或汲極電極。
  7. 如申請專利範圍第1項所述之元件基板，其中該金屬層為一驅動元件之信號線或掃描線。
  8. 如申請專利範圍第5項所述之元件基板，其中該導電層為一一透明材料。
  9. 如申請專利範圍第1項所述之元件基板，其更包含，一半導體層位於該金屬層與該基板之間。
  10. 如申請專利範圍第9項所述之元件基板，其中該半導體層之材料為多晶矽、非晶矽或金屬氧化物。
  11. 如申請專利範圍第5項所述之元件基板，其中該導電層為一金屬材料。
  12. 一種液晶顯示裝置，包括：一對向基板；一元件基板，相對於該對向基板；一液晶層，位於該對向基板以及一元件基板間；其中，該元件基板包括：一金屬層，位於該基板上，並位於該像素區域之中，其中該金屬層沿一第一方向具有一第一寬度；以及 一平坦層，位於該金屬層上，其中該平坦層具有一接觸孔，該接觸孔具有一連續壁面以及一底面，該底面暴露該金屬層，其中該底面沿該第一方向具有一第二寬度，其中，該第一寬度與第二寬度需滿足以下之公式： 其中，L1為該第二金屬層沿該第一方向之該第一寬度，L2為該接觸孔之底面沿該第一方向之該第二寬度，h為該平坦層之厚度，θ為連續壁面之一預設參考點與一基點之間之一直線與水平面的夾角，其中，該預設參考點為該連續壁面上距離該底面0.95h之位置，該基點為該連續壁面與該底面的交界位置，p為可調整參數，(1-p)h為該預設參考點於該垂直方向上的高度，0<p≦0.1。
  13. 如申請專利範圍第12項所述之液晶顯示裝置，其中該可調整參數p為0.05。
  14. 如申請專利範圍第12項所述之液晶顯示裝置，其中該夾角θ介於20~40度之間。
  15. 如申請專利範圍第12項所述之液晶顯示裝置，其中該夾角θ介於25~35度之間。
  16. 如申請專利範圍第12項所述之液晶顯示裝置，其更包含，一導電層位於該平坦層上，並透過該接觸孔與該金屬層電性連接。
  17. 如申請專利範圍第12項所述之液晶顯示裝置，其更包含， 一半導體層位於該金屬層與該基板之間。
  18. 如申請專利範圍第17項所述之液晶顯示裝置，其中該半導體層之材料為多晶矽、非晶矽或金屬氧化物。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022236826A1 (zh) * 2021-05-14 2022-11-17 京东方科技集团股份有限公司 显示基板和显示装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW373114B (en) * 1996-08-05 1999-11-01 Sharp Kk Liquid crystal display device
TW477907B (en) * 1997-03-07 2002-03-01 Toshiba Corp Array substrate, liquid crystal display device and their manufacturing method
JP2000206561A (ja) * 1999-01-08 2000-07-28 Matsushita Electric Ind Co Ltd 液晶表示装置の製造方法および液晶表示装置
JP4037117B2 (ja) * 2001-02-06 2008-01-23 株式会社日立製作所 表示装置
JP2005234091A (ja) * 2004-02-18 2005-09-02 Hitachi Displays Ltd 表示装置
KR20060126167A (ko) * 2005-06-03 2006-12-07 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 및그에 의해 제조된 박막 트랜지스터 기판
KR20080047085A (ko) * 2006-11-24 2008-05-28 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
RU2467367C2 (ru) * 2008-04-14 2012-11-20 Шарп Кабусики Кайся Жидкокристаллическая панель отображения
US8953122B2 (en) * 2009-06-18 2015-02-10 Japan Display Inc. Liquid crystal display device and manufacturing method for same
KR101284714B1 (ko) * 2010-09-20 2013-07-17 엘지디스플레이 주식회사 액정 표시장치와 이의 제조방법
KR101382119B1 (ko) * 2012-04-19 2014-04-09 실리콘 디스플레이 (주) 터치센서가 내장된 박막트랜지스터 디스플레이 장치 및 그 제조 방법
JP5906132B2 (ja) * 2012-05-09 2016-04-20 株式会社ジャパンディスプレイ 表示装置
JP2014149518A (ja) * 2013-01-11 2014-08-21 Panasonic Liquid Crystal Display Co Ltd 表示装置
JP6347937B2 (ja) * 2013-10-31 2018-06-27 株式会社ジャパンディスプレイ 液晶表示装置
JP6250364B2 (ja) * 2013-11-06 2017-12-20 株式会社ジャパンディスプレイ 液晶表示装置
JP6208555B2 (ja) * 2013-11-18 2017-10-04 株式会社ジャパンディスプレイ 液晶表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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