JPWO2007007451A1 - 多層配線基板及びその製造方法 - Google Patents
多層配線基板及びその製造方法 Download PDFInfo
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- JPWO2007007451A1 JPWO2007007451A1 JP2007524522A JP2007524522A JPWO2007007451A1 JP WO2007007451 A1 JPWO2007007451 A1 JP WO2007007451A1 JP 2007524522 A JP2007524522 A JP 2007524522A JP 2007524522 A JP2007524522 A JP 2007524522A JP WO2007007451 A1 JPWO2007007451 A1 JP WO2007007451A1
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Abstract
Description
11 セラミック層(基材層)
12 配線パターン
13 ライン導体(面内導体)
14 ビアホール導体
16〜18 貫通ビアビアホール導体
16A〜18A 半貫通連続ビアホール導体
31 第1表面実装部品
32 第2表面実装部品
100 キャリアフィルム
111 セラミックグリーンシート(未焼成の基材層)
116 貫通ビアホール導体部
116A 半貫通連続ビアホール導体部
H ビアホール導体用孔(貫通孔)
P 溝(半貫通連続孔)
まず、低温焼結セラミック材料(例えば、Al2O3をフィラーとし、ホウ珪酸ガラスを焼結助材として含むセラミック材料)をビニルアルコール等のバインダ中に分散させてスラリーを調製した後、このスラリーをドクターブレード法等によって、図5の(a)、図6の(a)に示すようにキャリアフィルム100上に塗布して低温焼結用のセラミックグリーンシート111を作製する。その後、セラミックグリーンシートを所定の大きさに切断する。
Claims (15)
- 複数の基材層を積層してなる積層体と、この積層体内に設けられた配線パターンと、を備えた多層配線基板において、上記複数の基材層のうち少なくとも一層には、上記配線パターンとして、上記基材層を上下に貫通する貫通ビアホール導体と、この貫通ビアホール導体に同一基材層内で電気的に接続され且つ上記基材層を貫通しない半貫通ビアホール導体と、を有することを特徴とする多層配線基板。
- 上記半貫通ビアホール導体は、複数の半貫通ビアホール導体が連設されてなる半貫通連続ビアホール導体であることを特徴とする請求項1に記載の多層配線基板。
- 上記貫通ビアホール導体と上記半貫通連続ビアホール導体とを有する基材層は、上記積層体の最表層に設けられていることを特徴とする請求項2に記載の多層配線基板。
- 上記貫通ビアホール導体と上記半貫通連続ビアホール導体とを有する基材層は、上記半貫通連続ビアホール導体が形成されている側を内面とするようにして、上記積層体の最上層に設けられており、上記貫通ビアホール導体の上記最上層の表面に表れた端面は、上記最上層の表面に搭載される表面実装部品の接続用端子が接続できるように配置されていることを特徴とする請求項3に記載の多層配線基板。
- 上記貫通ビアホール導体は、上記積層体内にて、上記半貫通連続ビアホール導体を介して、上記基材層の平面方向に延びる面内導体に接続されていることを特徴とする請求項2〜請求項4のいずれか1項に記載の多層配線基板。
- 上記貫通ビアホール導体は、互いに隣接する第1貫通ビアホール導体及び第2貫通ビアホール導体を含み、上記第1貫通ビアホール導体に接続されている第1半貫通連続ビアホール導体は、上記第2貫通ビアホール導体から遠ざかる方向に延設されていることを特徴とする請求項2〜請求項5のいずれか1項に記載の多層配線基板。
- 上記第2貫通ビアホール導体に接続されている第2半貫通連続ビアホール導体は、上記第1貫通ビアホール導体から遠ざかる方向に延設されていることを特徴とする請求項6に記載の多層配線基板。
- 上記貫通ビアホール導体は、上記第1貫通ビアホール導体または上記第2貫通ビアホール導体に隣接する第3貫通ビアホール導体を含み、上記第3貫通ビアホール導体に接続されている第3半貫通連続ビアホール導体は、上記第1貫通ビアホール導体及び第2貫通ビアホール導体から遠ざかる方向に延設されていることを特徴とする請求項6または請求項7に記載の多層配線基板。
- 上記基材層は、低温焼結セラミック材料からなり、上記配線パターンは、銀または銅を主成分とする導電性材料からなることを特徴とする請求項1〜請求項8のいずれか1項に記載の多層配線基板。
- 複数の基材層を積層してなる積層体と、この積層体内に設けられた配線パターンと、を有する多層配線基板を製造するに際し、
複数の基材層のうち少なくとも一層に、上記基材層の上下を貫通する貫通孔と、この貫通孔に連設され且つ上記基材層を貫通しない半貫通孔を形成する第1の工程と、
上記貫通孔及び上記半貫通孔に導電性材料を充填することにより、上記配線パターンとしての貫通ビアホール導体及び半貫通ビアホール導体を形成する第2の工程と、
を備えたことを特徴とする多層配線基板の製造方法。 - 上記半貫通孔を、複数の半貫通孔が連設されてなる半貫通連続孔とし、この半貫通連続孔を基に半貫通連続ビアホール導体を形成することを特徴とする請求項10に記載の多層配線基板の製造方法。
- 上記基材層にレーザを照射することにより、上記貫通孔及び半貫通連続孔を形成することを特徴とする請求項11に記載の多層配線基板の製造方法。
- 上記基材層はキャリアフィルムによって支持されており、キャリアフィルム側からレーザを照射することにより、上記貫通孔及び半貫通連続孔を形成することを特徴とする請求項12に記載の多層配線基板の製造方法。
- 上記基材層は、キャリアフィルムによって支持されており、上記基材層側からレーザを照射することにより、上記貫通孔及び半貫通連続孔を形成することを特徴とする請求項12に記載の多層配線基板の製造方法。
- 上記第1、第2の工程における基材層は、未焼成のセラミックシートであり、この基材層を含む未焼成の積層体を作製した後、上記未焼成の積層体を焼成する第3の工程を備えたことを特徴とする請求項10〜請求項14のいずれか1項に記載の多層配線基板の製造方法。
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