JP2011088756A - 低温焼結セラミック材料、低温焼結セラミック焼結体および多層セラミック基板 - Google Patents
低温焼結セラミック材料、低温焼結セラミック焼結体および多層セラミック基板 Download PDFInfo
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- H—ELECTRICITY
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Abstract
【解決手段】多層セラミック基板1のセラミック層2を構成するために用いられるセラミック材料として、SiO2−BaO−Al2O3系低温焼結セラミック材料を基本成分とし、このSiO2−BaO−Al2O3系基本成分100重量部に対して、副成分として、鉄を、Fe2O3に換算して0.044〜0.077重量部、かつ、ジルコニウムを、ZrO2に換算して0.30〜0.55重量部それぞれ含むものを用いる。SiO2−BaO−Al2O3系基本成分は、SiO2を47〜60重量%、BaOを20〜42重量%、Al2O3を5〜30重量%それぞれ含むことが好ましい。
【選択図】図1
Description
まず、低温焼結セラミック材料の基本成分の原料粉末として、いずれも平均粒径(D50)が2.0μm以下のSiO2、BaCO3およびAl2O3の各粉末を準備した。次に、これら原料粉末を、表1の「基本成分」に示す組成比率となるように秤量した。なお、副成分としてのFe2O3については、表1の「添加成分」に示す添加量となるように、上記SiO2粉末の表面に予め付着させておいた。
2 セラミック層
3 積層体
4,5 外部導体膜
6 内部導体膜
7 ビアホール導体
Claims (5)
- SiO2−BaO−Al2O3系低温焼結セラミック材料を基本成分とし、このSiO2−BaO−Al2O3系基本成分100重量部に対して、副成分として、鉄を、Fe2O3に換算して0.044〜0.077重量部、かつ、ジルコニウムを、ZrO2に換算して0.30〜0.55重量部それぞれ含む、低温焼結セラミック材料。
- 前記SiO2−BaO−Al2O3系基本成分は、SiO2を47〜60重量%、BaOを20〜42重量%、Al2O3を5〜30重量%それぞれ含む、請求項1に記載の低温焼結セラミック材料。
- 請求項1または2に記載の低温焼結セラミック材料を1050℃以下の温度で焼成してなる、低温焼結セラミック焼結体。
- 複数のセラミック層を積層してなる積層体を備え、前記複数のセラミック層のうち少なくとも1層は、請求項3に記載の低温焼結セラミック焼結体から構成されている、多層セラミック基板。
- 前記積層体の表面および/または内部に設けられる、銅系材料からなる導体パターンをさらに備える、請求項4の多層セラミック基板。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009241100A JP2011088756A (ja) | 2009-10-20 | 2009-10-20 | 低温焼結セラミック材料、低温焼結セラミック焼結体および多層セラミック基板 |
KR1020100096724A KR101188770B1 (ko) | 2009-10-20 | 2010-10-05 | 저온 소결 세라믹 재료, 저온 소결 세라믹 소결체 및 다층 세라믹 기판 |
CN2010105090699A CN102040375A (zh) | 2009-10-20 | 2010-10-12 | 低温烧结陶瓷材料、低温烧结陶瓷烧结体和多层陶瓷基板 |
EP10187362A EP2325150A1 (en) | 2009-10-20 | 2010-10-13 | Low temperature co-fired ceramic material, low temperature co-fired ceramic body, and multilayer ceramic substrate |
US12/906,336 US8231961B2 (en) | 2009-10-20 | 2010-10-18 | Low temperature co-fired ceramic material, low temperature co-fired ceramic body, and multilayer ceramic substrate |
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JP2009241100A JP2011088756A (ja) | 2009-10-20 | 2009-10-20 | 低温焼結セラミック材料、低温焼結セラミック焼結体および多層セラミック基板 |
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JP2011088756A true JP2011088756A (ja) | 2011-05-06 |
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JP2009241100A Pending JP2011088756A (ja) | 2009-10-20 | 2009-10-20 | 低温焼結セラミック材料、低温焼結セラミック焼結体および多層セラミック基板 |
Country Status (5)
Country | Link |
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US (1) | US8231961B2 (ja) |
EP (1) | EP2325150A1 (ja) |
JP (1) | JP2011088756A (ja) |
KR (1) | KR101188770B1 (ja) |
CN (1) | CN102040375A (ja) |
Cited By (1)
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JP2016172683A (ja) * | 2015-03-12 | 2016-09-29 | 中国科学院上海硅酸塩研究所 | 低温同時焼成セラミック材料及びその製造方法 |
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JP5195876B2 (ja) * | 2010-11-10 | 2013-05-15 | Tdk株式会社 | コイル部品及びその製造方法 |
CN107531577B (zh) * | 2015-05-15 | 2020-12-18 | 株式会社村田制作所 | 低温烧结陶瓷材料、陶瓷烧结体以及陶瓷电子部件 |
CN115321954B (zh) * | 2022-08-09 | 2023-07-07 | 广东环波新材料有限责任公司 | 陶瓷基板的制备方法以及低温共烧陶瓷基板 |
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JPH02296774A (ja) * | 1989-05-12 | 1990-12-07 | Fujitsu Ltd | 窒化アルミニウム基板の製造方法 |
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US8231961B2 (en) | 2012-07-31 |
KR101188770B1 (ko) | 2012-10-10 |
KR20110043440A (ko) | 2011-04-27 |
US20110091686A1 (en) | 2011-04-21 |
EP2325150A1 (en) | 2011-05-25 |
CN102040375A (zh) | 2011-05-04 |
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