JP5263226B2 - 多層セラミック基板およびその製造方法 - Google Patents
多層セラミック基板およびその製造方法 Download PDFInfo
- Publication number
- JP5263226B2 JP5263226B2 JP2010152713A JP2010152713A JP5263226B2 JP 5263226 B2 JP5263226 B2 JP 5263226B2 JP 2010152713 A JP2010152713 A JP 2010152713A JP 2010152713 A JP2010152713 A JP 2010152713A JP 5263226 B2 JP5263226 B2 JP 5263226B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base material
- ceramic
- fresnoite
- ceramic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 117
- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 229910001597 celsian Inorganic materials 0.000 claims abstract description 27
- 238000010304 firing Methods 0.000 claims abstract description 26
- 229910015999 BaAl Inorganic materials 0.000 claims abstract description 3
- 229910008484 TiSi Inorganic materials 0.000 claims abstract description 3
- 239000011521 glass Substances 0.000 claims description 20
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 19
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 12
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 72
- 238000005245 sintering Methods 0.000 abstract description 23
- 239000013078 crystal Substances 0.000 abstract description 21
- 238000000034 method Methods 0.000 abstract description 11
- 238000005336 cracking Methods 0.000 abstract 1
- 238000000280 densification Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 211
- 239000000843 powder Substances 0.000 description 32
- 239000004020 conductor Substances 0.000 description 30
- 229910010293 ceramic material Inorganic materials 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 239000002002 slurry Substances 0.000 description 9
- 239000002994 raw material Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910018125 Al-Si Inorganic materials 0.000 description 5
- 229910018520 Al—Si Inorganic materials 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000004014 plasticizer Substances 0.000 description 4
- 230000001376 precipitating effect Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 238000007606 doctor blade method Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 description 3
- 239000011224 oxide ceramic Substances 0.000 description 3
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 229960002380 dibutyl phthalate Drugs 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000013001 point bending Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
- C04B35/18—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay rich in aluminium oxide
- C04B35/195—Alkaline earth aluminosilicates, e.g. cordierite or anorthite
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3215—Barium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3262—Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3409—Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
- C04B2235/3436—Alkaline earth metal silicates, e.g. barium silicate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
- C04B2235/6025—Tape casting, e.g. with a doctor blade
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6582—Hydrogen containing atmosphere
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/56—Using constraining layers before or during sintering
- C04B2237/564—Using constraining layers before or during sintering made of glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/58—Forming a gradient in composition or in properties across the laminate or the joined articles
- C04B2237/582—Forming a gradient in composition or in properties across the laminate or the joined articles by joining layers or articles of the same composition but having different additives
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Devices For Post-Treatments, Processing, Supply, Discharge, And Other Processes (AREA)
Description
また、この発明は、少なくともSiO 2 、BaO、Al 2 O 3 およびTiO 2 を含む第1のセラミック層用グリーンシートを準備する工程と、少なくともBaおよびTiを含有するガラスとAl 2 O 3 とを含む、または少なくともBaを含有するガラスとAl 2 O 3 およびTiO 2 とを含む第2のセラミック層用グリーンシートを準備する工程と、第1のセラミック層用グリーンシートと第2のセラミック層用グリーンシートとが交互に積層された部分を含む積層体を形成する工程と、積層体を非酸化性雰囲気下で焼成する工程と、を含む、多層セラミック基板の製造方法にも向けられる。この発明に係る多層セラミック基板の製造方法は、焼成工程において、第1のセラミック層内にセルシアンおよびフレスノイトを形成し、かつ、第2のセラミック層中にセルシアンを形成させることを特徴としている。
次に、この発明による効果を確認するために実施した実験例について説明する。
出発原料として、いずれも粒径2.0μm以下のSiO2、BaCO3、Al2O3、ZrO2、CaCO3、B2O3、MnCO3、TiO2およびMg(OH)2の各粉末を準備した。次に、これら出発原料粉末を、表1に示す組成比となるように秤量し、湿式混合粉砕した後、乾燥し、得られた混合物を750〜1000℃で1〜3時間仮焼して基材層のための原料粉末を得た。上記BaCO3は焼成後にBaOになり、上記CaCO3は焼成後にCaOになり、上記MnCO3は焼成後にMnOになり、上記Mg(OH)2は焼成後にMgOになるものである。なお、表1において、各出発原料粉末は、重量%を単位として示されている。
出発原料として、いずれも粒径2.0μm以下のAl2O3およびTiO2の各粉末を準備するとともに、表2に示す組成のガラス粉末G−1〜G−4を準備した。なお、表2において、ガラス粉末の組成は、重量%を単位として示されている。
(1)で作製した基材層用グリーンシートS−1〜S−4のいずれか、および(2)で作製した拘束層用グリーンシートR−1〜R−5のいずれかを、表4の「焼結前」の欄に示すように選び、各々選ばれた基材層用グリーンシートと拘束層用グリーンシートとが交互になるように積層した。この積層にあたっては、拘束層用グリーンシートが最外層に配置されるようにした。なお、表1ないし表3からも判断できることではあるが、より迅速な判断を可能にするため、表4の「焼結前」の欄における「基材層中のTi成分の有無」および「拘束層中のTi成分の有無」の各欄には、基材層用グリーンシートと拘束層用グリーンシートとの各々について、Ti成分の含有の有無が表示されている。
次に、上記生の積層体試料を、窒素−水素の非酸化性雰囲気中において最高温度980℃にて焼成し、板状のセラミック焼結体試料を得た。
次に、得られたセラミック焼結体試料について、表4の「焼結後」の欄に示すように、破壊靭性値、基板強度および電極ピール強度を求めるとともに、フレスノイトの有無およびその存在量を評価した。より詳細な測定または評価方法は次のとおりである。
セラミック焼結体試料の表面にビッカース圧子による圧痕を500gf×15秒の条件で付し、その大きさと亀裂の長さから破壊靱性値KICを算出した。
3点曲げ強度試験(JIS−R1061)によって、セラミック焼結体試料の基板強度を評価した。
セラミック焼結体試料の表面に1辺2mmの角型電極を形成し、この角型電極にL字状のリード線をはんだ付けし、試料表面に対して垂直方向の引っ張り試験により試料と電極の接合強度を測定し、これを電極ピール強度とした。
セラミック焼結体試料の断面が露出するように研磨を施し、拘束層および基材層の各々について、透過型顕微鏡のEDX点分析から結晶の構成元素を定量評価し、フレスノイトを同定した。
セラミック焼結体試料の断面が露出するように研磨を施し、透過型顕微鏡を用いて、4.0μm×5.0μm面積あたりのフレスノイト結晶数を計数した。計数は、拘束層および基材層の各々について、5箇所ずつ行ない、平均化した値をフレスノイトの存在量とした。表4の「フレスノイトの存在量」の欄において、4.0μm×5.0μm面積あたりのフレスノイト結晶数が6個以上のときが「A」、同じく4個以上かつ6個未満のときが「B]、同じく2個以上かつ4個未満のときが「C」、同じく1個のときが「D」、同じく0個のときが「E」で表示されている。
・「F0」、「F1」および「F2」間での基板強度の比較
「F0」である試料1に比べて、「F1」または「F2」である試料2〜9の方が基板強度は高い。これは、焼結前の基材層用グリーンシートにTiO2成分を添加したことで、焼結後の基材層にフレスノイトが析出したため、基板強度が向上したと考えられる。さらに、「F1」である試料2〜4に比べ、「F2」である試料5〜9の方が基板強度は高い。これは、試料5〜9は、焼結後の基材層だけでなく、拘束層にもフレスノイトを析出しているため、基板強度が向上したと考えられる。
試料2〜4は、焼結前の基材層用グリーンシートにTiO2成分を添加し、その添加量を試料2〜4間で変化させたものであり、焼結前の拘束層用グリーンシートの組成については、試料2〜4間で同一であり、TiO2成分を含んでいない。
試料5〜9は、焼結前の拘束層用グリーンシートにTiO2成分を添加し、その添加量を試料5〜9間で変化させたものである。より特定的には、TiO2成分は、試料5〜7および9ではTiO2系ガラスとして、試料8ではTiO2酸化物として添加している。
上述した基板強度と破壊靭性値および電極ピール強度とはほぼ相関していて、基板強度が向上すると、破壊靭性値および電極ピール強度についても向上している。
2 基材層
3 拘束層
Claims (4)
- 第1のセラミック層と、前記第1のセラミック層よりも厚みの薄い第2のセラミック層とが交互に積層されている部分を含む、多層セラミック基板であって、
前記第1のセラミック層と前記第2のセラミック層とは、いずれも、セルシアン(BaAl2Si2O8)を有しており、セルシアンの存在量は、前記第2のセラミック層よりも前記第1のセラミック層の方が少なく、
前記第1のセラミック層は、フレスノイト(Ba2TiSi2O8)をさらに有しており、
前記第1および第2のセラミック層が積層された方向に垂直な方向から前記第1のセラミック層の断面を見たとき、前記断面における短辺が4μm、長辺が5μmで囲まれる長方形内に前記フレスノイトが2個以上存在する、多層セラミック基板。 - 前記第2のセラミック層は、フレスノイトをさらに有している、請求項1に記載の多層セラミック基板。
- 前記第2のセラミック層が最外層に配置されている、請求項2に記載の多層セラミック基板。
- 少なくともSiO2、BaO、Al2O3およびTiO2を含む第1のセラミック層用グリーンシートを準備する工程と、
少なくともBaおよびTiを含有するガラスとAl2O3とを含む、または少なくともBaを含有するガラスとAl2O3およびTiO2とを含む第2のセラミック層用グリーンシートを準備する工程と、
前記第1のセラミック層用グリーンシートと前記第2のセラミック層用グリーンシートとが交互に積層された部分を含む積層体を形成する工程と、
前記積層体を非酸化性雰囲気下で焼成する工程と、
を含む、多層セラミック基板の製造方法であって、
前記焼成工程において、前記第1のセラミック層内にセルシアンおよびフレスノイトを形成し、かつ、前記第2のセラミック層中にセルシアンを形成させること、
を特徴とする、多層セラミック基板の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010152713A JP5263226B2 (ja) | 2010-07-05 | 2010-07-05 | 多層セラミック基板およびその製造方法 |
US13/174,801 US8420209B2 (en) | 2010-07-05 | 2011-07-01 | Multilayer ceramic substrate |
EP11172335.9A EP2404754B1 (en) | 2010-07-05 | 2011-07-01 | Multilayer ceramic substrate |
CN201110199772.9A CN102316671B (zh) | 2010-07-05 | 2011-07-04 | 多层陶瓷基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010152713A JP5263226B2 (ja) | 2010-07-05 | 2010-07-05 | 多層セラミック基板およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012015433A JP2012015433A (ja) | 2012-01-19 |
JP5263226B2 true JP5263226B2 (ja) | 2013-08-14 |
Family
ID=44562683
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010152713A Active JP5263226B2 (ja) | 2010-07-05 | 2010-07-05 | 多層セラミック基板およびその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8420209B2 (ja) |
EP (1) | EP2404754B1 (ja) |
JP (1) | JP5263226B2 (ja) |
CN (1) | CN102316671B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105051888B (zh) * | 2013-03-27 | 2018-01-23 | 株式会社村田制作所 | 绝缘性陶瓷糊料、陶瓷电子器件及其制造方法 |
JP6398349B2 (ja) * | 2013-08-23 | 2018-10-03 | Tdk株式会社 | 積層型セラミック電子部品 |
US10367181B2 (en) * | 2015-10-30 | 2019-07-30 | Panasonic Intellectual Property Management Co., Ltd. | Lithium-ion battery |
WO2017163931A1 (ja) | 2016-03-22 | 2017-09-28 | 株式会社村田製作所 | セラミック電子部品およびセラミック電子部品の製造方法 |
JP2020025044A (ja) * | 2018-08-08 | 2020-02-13 | 日本特殊陶業株式会社 | セラミック配線基板 |
DE102018131605A1 (de) | 2018-12-10 | 2020-06-10 | Tdk Electronics Ag | Substrat und Verfahren zur Herstellung des Substrats |
CN113165982B (zh) * | 2018-12-21 | 2022-12-27 | 株式会社村田制作所 | 层叠体和电子部件 |
CN109608050B (zh) * | 2018-12-25 | 2021-11-12 | 中国人民解放军国防科技大学 | 一种高频低介低损耗微晶玻璃/陶瓷系ltcc基板材料及其制备方法 |
EP4052846A4 (en) * | 2019-10-29 | 2024-03-20 | Kyocera Corporation | CERAMIC STRUCTURE, ADSORPTION NOZZLE, CUTTING DEVICE, TWEEZERS, WEAR DETECTION APPARATUS, POWDER ELECTRIC CHARGE ELIMINATION DEVICE, POWDER PRODUCTION DEVICE, LIFTING PIN, TRANSPORT HAND AND FIBER GUIDE |
WO2023112882A1 (ja) * | 2021-12-17 | 2023-06-22 | 株式会社村田製作所 | セラミック電子部品 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5417160B2 (ja) * | 1971-10-23 | 1979-06-27 | ||
US3837869A (en) * | 1972-07-20 | 1974-09-24 | Du Pont | Celsian containing dielectric crossover compositions |
JP3601671B2 (ja) * | 1998-04-28 | 2004-12-15 | 株式会社村田製作所 | 複合積層体の製造方法 |
US6447888B2 (en) * | 2000-01-31 | 2002-09-10 | Kyocera Corporation | Ceramic wiring board |
JP3669255B2 (ja) | 2000-09-19 | 2005-07-06 | 株式会社村田製作所 | セラミック多層基板の製造方法および未焼成セラミック積層体 |
JP2003221277A (ja) * | 2001-11-21 | 2003-08-05 | Asahi Glass Co Ltd | 誘電体形成用ガラス粉末、誘電体形成用ガラスセラミックス組成物および誘電体 |
JP4045127B2 (ja) * | 2002-05-28 | 2008-02-13 | 京セラ株式会社 | セラミック基板 |
JP4736342B2 (ja) * | 2004-04-09 | 2011-07-27 | 株式会社村田製作所 | ガラスセラミック原料組成物、ガラスセラミック焼結体およびガラスセラミック多層基板 |
JP5013239B2 (ja) * | 2004-06-15 | 2012-08-29 | 日立金属株式会社 | 高強度低温焼成セラミック組成物並びにこれを用いた積層電子部品 |
JP2008053525A (ja) * | 2006-08-25 | 2008-03-06 | Murata Mfg Co Ltd | 多層セラミック基板およびその製造方法 |
JP4869005B2 (ja) * | 2006-09-27 | 2012-02-01 | 京セラ株式会社 | 多層基板の製造方法 |
JP2008270741A (ja) * | 2007-03-27 | 2008-11-06 | Kyocera Corp | 配線基板 |
US8181483B2 (en) * | 2007-06-01 | 2012-05-22 | Schott Ag | Processes for preparing electrically-conductive glass-ceramics |
JP5024064B2 (ja) | 2008-01-15 | 2012-09-12 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法 |
JP4883224B2 (ja) * | 2009-01-07 | 2012-02-22 | 株式会社村田製作所 | 低温焼結セラミック材料およびセラミック基板 |
JP4883228B2 (ja) * | 2009-02-16 | 2012-02-22 | 株式会社村田製作所 | 低温焼結セラミック焼結体および多層セラミック基板 |
-
2010
- 2010-07-05 JP JP2010152713A patent/JP5263226B2/ja active Active
-
2011
- 2011-07-01 EP EP11172335.9A patent/EP2404754B1/en active Active
- 2011-07-01 US US13/174,801 patent/US8420209B2/en active Active
- 2011-07-04 CN CN201110199772.9A patent/CN102316671B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US8420209B2 (en) | 2013-04-16 |
JP2012015433A (ja) | 2012-01-19 |
CN102316671A (zh) | 2012-01-11 |
CN102316671B (zh) | 2014-07-09 |
US20120003450A1 (en) | 2012-01-05 |
EP2404754A3 (en) | 2012-07-25 |
EP2404754B1 (en) | 2017-01-11 |
EP2404754A2 (en) | 2012-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5263226B2 (ja) | 多層セラミック基板およびその製造方法 | |
JP4883228B2 (ja) | 低温焼結セラミック焼結体および多層セラミック基板 | |
KR101290089B1 (ko) | 저온 소결 세라믹 재료 및 세라믹 기판 | |
JP5321066B2 (ja) | セラミック組成物およびセラミック基板 | |
JP5533674B2 (ja) | 低温焼結セラミック材料およびセラミック基板 | |
JP2011040604A (ja) | 積層型セラミック電子部品およびその製造方法 | |
JP6728859B2 (ja) | セラミック基板およびその製造方法 | |
JP5582150B2 (ja) | セラミック焼結体およびその製造方法 | |
KR101188770B1 (ko) | 저온 소결 세라믹 재료, 저온 소결 세라믹 소결체 및 다층 세라믹 기판 | |
JPH1095686A (ja) | 銅メタライズ組成物及びそれを用いたガラスセラミック配線基板 | |
JP4780995B2 (ja) | ガラスセラミック焼結体およびそれを用いた配線基板 | |
JP4844317B2 (ja) | セラミック電子部品およびその製造方法 | |
JP4496529B2 (ja) | 多層セラミック基板の製造方法及び多層セラミック基板 | |
JP5585649B2 (ja) | 金属ベース基板およびその製造方法 | |
JP5648682B2 (ja) | 金属ベース基板 | |
JP4699769B2 (ja) | セラミック多層基板の製造方法 | |
JP4449344B2 (ja) | 酸化物磁器組成物、及びセラミック多層基板 | |
JP5533120B2 (ja) | 多層セラミック基板の製造方法 | |
JP2005123460A (ja) | 多層セラミック基板の製造方法 | |
JP2006228777A (ja) | 導体ペースト及び配線基板の製造方法 | |
JP2008094655A (ja) | 誘電体セラミック原料組成物、セラミック基板および多層セラミック基板の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120613 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121016 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121221 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130318 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130415 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5263226 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |