JP6133227B2 - 配線基板及びその製造方法 - Google Patents
配線基板及びその製造方法 Download PDFInfo
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- JP6133227B2 JP6133227B2 JP2014066936A JP2014066936A JP6133227B2 JP 6133227 B2 JP6133227 B2 JP 6133227B2 JP 2014066936 A JP2014066936 A JP 2014066936A JP 2014066936 A JP2014066936 A JP 2014066936A JP 6133227 B2 JP6133227 B2 JP 6133227B2
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- wiring
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- H—ELECTRICITY
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- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4682—Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil
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Description
[第1の実施の形態に係る配線基板の構造]
まず、第1の実施の形態に係る配線基板の構造について説明する。図1は、第1の実施の形態に係る配線基板を例示する図であり、図1(b)は図1(a)のA部の拡大図である。図1を参照するに、第1の実施の形態に係る配線基板1は、第1の配線部材10と、第1の配線部材10の一方の側に積層された第2の配線部材30と、第1の配線部材10の他方の側に積層されたソルダーレジスト層40とを有するコアレス基板である。配線基板1の平面形状は、例えば、40mm角の正方形状とすることができる。但し、これには限定されず、平面形状は任意の形状とすることができる。
次に、第1の実施の形態に係る配線基板の製造方法について説明する。図2〜図9は、第1の実施の形態に係る配線基板の製造工程を例示する図である。なお、本実施の形態では、配線基板となる複数の部分を作製後、個片化して各配線基板とする工程の例を示すが、単品の配線基板を作製する工程としてもよい。
第2の実施の形態では、第1の実施の形態とは低密度配線層の構造が異なる配線基板の例を示す。なお、第2実施の形態において、既に説明した実施の形態と同一構成部品についての説明は省略する場合がある。
まず、第2の実施の形態に係る配線基板の構造について説明する。図10は、第2の実施の形態に係る配線基板を例示する図であり、図10(b)は図10(a)のB部の拡大図である。図10を参照するに、第2の実施の形態に係る配線基板1Aは、低密度配線層である第1の配線部材10が第1の配線部材20に置換された点が、配線基板1(図1参照)と相違する。
次に、第2の実施の形態に係る配線基板の製造方法について説明する。図11及び図12は、第2の実施の形態に係る配線基板の製造工程を例示する図である。なお、本実施の形態では、配線基板となる複数の部分を作製後、個片化して各配線基板とする工程の例を示すが、単品の配線基板を作製する工程としてもよい。
第1の実施の形態の変形例では、電子部品搭載用のパッドの形状が異なる配線基板の例を示す。なお、第1の実施の形態の変形例において、既に説明した実施の形態と同一構成部品についての説明は省略する場合がある。
第1の実施の形態の応用例1では、第1の実施の形態に係る配線基板に半導体チップが搭載(フリップチップ実装)された半導体パッケージの例を示す。なお、第1の実施の形態の応用例1において、既に説明した実施の形態と同一構成部品についての説明は省略する場合がある。
第1の実施の形態の応用例2では、第1の実施の形態の応用例1に係る半導体パッケージ上に更に他の半導体パッケージが搭載されたPOP(Package on package)構造の半導体パッケージの例を示す。なお、第1の実施の形態の応用例2において、既に説明した実施の形態と同一構成部品についての説明は省略する場合がある。
2A、2B、2C、2D、2E、3A 半導体パッケージ
10、20 第1の配線部材
12、14、16、18、22、24、26、28、31、33、35、37、38、57、82、83 配線層
13、15、17、23、25、27、32、34、36 絶縁層
13x、15x、17x、23x、25x、27x、32x、34x、36x、36y ビアホール
17a、18a、23a 上面
24a 一方の端面
30、30A、30C 第2の配線部材
31a、37a、57a シード層
31b、37b、57b 電解めっき層
36z、40x、85x、86x、300x、310x、320x、330x 開口部
40、85、86 ソルダーレジスト層
61、66、92 半導体チップ
62、67、69、91 バンプ
63、68 アンダーフィル樹脂
70 はんだボール
71 銅コアボール
72 はんだ
80 配線基板
81 コア層
84 貫通配線
180 金属層
250 支持体
250a 一方の面
250b 他方の面
260 接着層
270 補強板
300、310、320、330 レジスト層
Claims (9)
- 複数の第1絶縁層と、
前記複数の第1絶縁層のうち、最上層の第1絶縁層の上面に積層された複数の第2絶縁層と、を有し、
前記複数の第1絶縁層間には第1配線層が形成され、
前記最上層の第1絶縁層の上面及び前記複数の第2絶縁層間には第2配線層が形成され、
前記複数の第1絶縁層は非感光性樹脂からなり、
前記複数の第2絶縁層は感光性樹脂からなり、
前記複数の第1絶縁層にはビアホールに金属が充填された第1ビア配線が埋設され、
前記複数の第2絶縁層にはビアホールに金属が充填された第2ビア配線が埋設され、
前記最上層の第1絶縁層に埋設された前記第1ビア配線の一方の端面は、前記最上層の第1絶縁層の上面から露出し、前記複数の第2配線層うち、前記最上層の第1絶縁層の上面に形成された最下層の前記第2配線層と直接接合されており、
前記最上層の第1絶縁層に埋設された前記第1ビア配線の一方の端面は、前記最上層の第1絶縁層の上面と面一であり、
前記複数の第2配線層は、前記第1配線層よりも配線密度が高く形成され、
前記複数の第2配線層は、シード層上に電解めっき層を積層した構造であり、
前記最上層の第1絶縁層に埋設された前記第1ビア配線の一方の端面は、前記最上層の第1絶縁層の上面に形成された最下層の第2配線層を構成する前記シード層と直接接合されている配線基板。 - 前記最上層の第1絶縁層の上面及び前記最上層の第1絶縁層に埋設された前記第1ビア配線の一方の端面は研磨された面である請求項1記載の配線基板。
- 前記第1ビア配線の一方の端面は、他方の端面よりも面積が小さく、
前記第1ビア配線の他方の端面は、前記最上層の第1絶縁層と前記最上層の第1絶縁層に隣接する他の第1絶縁層との間に形成された前記第1配線層と一体に形成されている請求項1又は2記載の配線基板。 - 前記第1ビア配線の一方の端面は、他方の端面よりも面積が大きく、
前記第1ビア配線の他方の端面は、前記最上層の第1絶縁層と前記最上層の第1絶縁層に隣接する他の第1絶縁層との間に形成された前記第1配線層と直接接合されている請求項1又は2記載の配線基板。 - 前記最上層の第1絶縁層の上面は、前記第1配線層が形成された前記他の第1絶縁層の面よりも平坦面である請求項3又は4記載の配線基板。
- 前記複数の第1絶縁層はフィラーを含有しており、
前記複数の第2絶縁層は、前記複数の第1絶縁層よりも少ない量のフィラーを含有しているか、又は、フィラーを含有していない請求項1乃至5の何れか一項記載の配線基板。 - 前記複数の第2配線層のそれぞれの配線の厚さは、前記第1配線層の配線の厚さよりも薄く、
前記複数の第2絶縁層のそれぞれの絶縁層の厚さは、前記複数の第1絶縁層のそれぞれの絶縁層の厚さよりも薄い請求項1乃至6の何れか一項記載の配線基板。 - 前記複数の第2配線層のそれぞれの配線幅及び配線間隔は、前記第1配線層の配線幅及び配線間隔よりも小さい請求項1乃至7の何れか一項記載の配線基板。
- 支持体上に、非感光性樹脂からなる第1絶縁層を形成する工程と、
前記第1絶縁層に、前記第1絶縁層を貫通して前記支持体の表面を露出するビアホールを形成する工程と、
前記第1絶縁層に形成された前記ビアホールに金属を充填して第1ビア配線を形成すると共に、前記第1ビア配線から前記第1絶縁層上に延在する第1配線層を形成する工程と、
前記第1絶縁層上に、非感光性樹脂からなる他の第1絶縁層を、前記第1配線層を被覆するように積層する工程と、
前記支持体を除去し、前記支持体と接していた前記第1絶縁層の一方の面及び前記第1絶縁層に埋設された前記第1ビア配線の一方の端面を露出する工程と、
前記第1絶縁層の一方の面及び前記第1絶縁層に埋設された前記第1ビア配線の一方の端面を研磨し、前記第1絶縁層に埋設された前記第1ビア配線の一方の端面と、前記第1絶縁層の一方の面とを面一とする工程と、
前記第1絶縁層の一方の面に、前記第1絶縁層に埋設された前記第1ビア配線の一方の端面と直接接合された第2配線層を形成する工程と、
前記第1絶縁層の一方の面に、感光性樹脂からなる第2絶縁層を、前記第2配線層を被覆するように積層する工程と、
前記第2絶縁層に、前記第2絶縁層を貫通して前記第2配線層の表面を露出するビアホールを形成する工程と、
前記第2絶縁層に形成された前記ビアホールに金属を充填して第2ビア配線を形成すると共に、前記第2ビア配線から前記第2絶縁層上に延在する他の第2配線層を形成する工程と、
前記第2絶縁層上に、感光性樹脂からなる他の第2絶縁層を、前記他の第2配線層を被覆するように積層する工程と、を有し、
前記第2配線層及び前記他の第2配線層は、前記第1配線層よりも配線密度が高く形成される配線基板の製造方法。
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