JP6619631B2 - 固体撮像装置および撮像システム - Google Patents

固体撮像装置および撮像システム Download PDF

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Publication number
JP6619631B2
JP6619631B2 JP2015233016A JP2015233016A JP6619631B2 JP 6619631 B2 JP6619631 B2 JP 6619631B2 JP 2015233016 A JP2015233016 A JP 2015233016A JP 2015233016 A JP2015233016 A JP 2015233016A JP 6619631 B2 JP6619631 B2 JP 6619631B2
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wiring
solid
imaging device
state imaging
wiring portion
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Japanese (ja)
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JP2017103514A5 (ko
JP2017103514A (ja
Inventor
秀央 小林
秀央 小林
慧 落合
慧 落合
雅紀 佐藤
雅紀 佐藤
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Canon Inc
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Canon Inc
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Priority to JP2015233016A priority Critical patent/JP6619631B2/ja
Priority to US15/296,749 priority patent/US10015430B2/en
Priority to CN201611081719.8A priority patent/CN106817546B/zh
Publication of JP2017103514A publication Critical patent/JP2017103514A/ja
Publication of JP2017103514A5 publication Critical patent/JP2017103514A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2015233016A 2015-11-30 2015-11-30 固体撮像装置および撮像システム Active JP6619631B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015233016A JP6619631B2 (ja) 2015-11-30 2015-11-30 固体撮像装置および撮像システム
US15/296,749 US10015430B2 (en) 2015-11-30 2016-10-18 Solid state image device and image system
CN201611081719.8A CN106817546B (zh) 2015-11-30 2016-11-30 固态摄像设备以及摄像系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015233016A JP6619631B2 (ja) 2015-11-30 2015-11-30 固体撮像装置および撮像システム

Publications (3)

Publication Number Publication Date
JP2017103514A JP2017103514A (ja) 2017-06-08
JP2017103514A5 JP2017103514A5 (ko) 2019-01-17
JP6619631B2 true JP6619631B2 (ja) 2019-12-11

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JP2015233016A Active JP6619631B2 (ja) 2015-11-30 2015-11-30 固体撮像装置および撮像システム

Country Status (3)

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US (1) US10015430B2 (ko)
JP (1) JP6619631B2 (ko)
CN (1) CN106817546B (ko)

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JP2018082295A (ja) 2016-11-16 2018-05-24 キヤノン株式会社 撮像装置及び撮像システム
JP6552478B2 (ja) 2016-12-28 2019-07-31 キヤノン株式会社 固体撮像装置
US10652531B2 (en) 2017-01-25 2020-05-12 Canon Kabushiki Kaisha Solid-state imaging device, imaging system, and movable object
JP6889571B2 (ja) 2017-02-24 2021-06-18 キヤノン株式会社 撮像装置および撮像システム
JP2021176154A (ja) * 2018-07-18 2021-11-04 ソニーセミコンダクタソリューションズ株式会社 受光素子および測距モジュール
WO2020045278A1 (en) 2018-08-31 2020-03-05 Canon Kabushiki Kaisha Imaging device with motion dependent pixel binning
US11013105B2 (en) 2018-09-12 2021-05-18 Canon Kabushiki Kaisha Image pickup unit and image pickup apparatus
JP7299711B2 (ja) 2019-01-30 2023-06-28 キヤノン株式会社 光電変換装置及びその駆動方法
JP7286389B2 (ja) * 2019-04-15 2023-06-05 キヤノン株式会社 無線通信装置、無線通信システムおよび通信方法
JP6986046B2 (ja) 2019-05-30 2021-12-22 キヤノン株式会社 光電変換装置および機器
JP7345301B2 (ja) 2019-07-18 2023-09-15 キヤノン株式会社 光電変換装置および機器
JP7303682B2 (ja) 2019-07-19 2023-07-05 キヤノン株式会社 光電変換装置及び撮像システム
JP7374639B2 (ja) * 2019-07-19 2023-11-07 キヤノン株式会社 光電変換装置及び撮像システム
JP7504623B2 (ja) 2020-02-28 2024-06-24 キヤノン株式会社 撮像装置および撮像システム
JP7171649B2 (ja) 2020-05-15 2022-11-15 キヤノン株式会社 撮像装置および撮像システム
JP7474123B2 (ja) 2020-06-15 2024-04-24 キヤノン株式会社 光電変換装置、光電変換システム及び移動体
US11736813B2 (en) 2020-07-27 2023-08-22 Canon Kabushiki Kaisha Imaging device and equipment
JP2022119633A (ja) 2021-02-04 2022-08-17 キヤノン株式会社 光電変換装置、電子機器および基板
JP2022144241A (ja) 2021-03-18 2022-10-03 キヤノン株式会社 光電変換装置、基板及び機器
JP2022144242A (ja) 2021-03-18 2022-10-03 キヤノン株式会社 光電変換装置、光電変換システムおよび移動体
JP2022158042A (ja) 2021-04-01 2022-10-14 キヤノン株式会社 光電変換装置
JP7419309B2 (ja) 2021-09-08 2024-01-22 キヤノン株式会社 固体撮像装置

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JP2014175553A (ja) 2013-03-11 2014-09-22 Canon Inc 固体撮像装置およびカメラ
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JP6223055B2 (ja) 2013-08-12 2017-11-01 キヤノン株式会社 光電変換装置
JP6245997B2 (ja) 2014-01-16 2017-12-13 キヤノン株式会社 固体撮像装置及び撮像システム
JP6246004B2 (ja) 2014-01-30 2017-12-13 キヤノン株式会社 固体撮像装置
JP6057931B2 (ja) 2014-02-10 2017-01-11 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
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JP2016144151A (ja) 2015-02-04 2016-08-08 キヤノン株式会社 固体撮像装置の駆動方法、固体撮像装置およびカメラ

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Publication number Publication date
CN106817546A (zh) 2017-06-09
US10015430B2 (en) 2018-07-03
US20170155862A1 (en) 2017-06-01
JP2017103514A (ja) 2017-06-08
CN106817546B (zh) 2020-03-31

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