JP6173753B2 - 密封膜を含むパッケージオンパッケージ電子装置及びその製造方法 - Google Patents

密封膜を含むパッケージオンパッケージ電子装置及びその製造方法 Download PDF

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JP6173753B2
JP6173753B2 JP2013081768A JP2013081768A JP6173753B2 JP 6173753 B2 JP6173753 B2 JP 6173753B2 JP 2013081768 A JP2013081768 A JP 2013081768A JP 2013081768 A JP2013081768 A JP 2013081768A JP 6173753 B2 JP6173753 B2 JP 6173753B2
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package
sealing film
electronic device
integrated circuit
semiconductor integrated
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JP2013222966A (ja
JP2013222966A5 (enExample
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忠彬 任
忠彬 任
慧▲ジュン▼ 柳
慧▲ジュン▼ 柳
泰成 朴
泰成 朴
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161Exposing the passive side of the semiconductor or solid-state body of a flip chip
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress
    • H01L2924/3511Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9171792B2 (en) * 2011-02-28 2015-10-27 Advanced Semiconductor Engineering, Inc. Semiconductor device packages having a side-by-side device arrangement and stacking functionality
US8963311B2 (en) 2012-09-26 2015-02-24 Apple Inc. PoP structure with electrically insulating material between packages
US9263377B2 (en) * 2012-11-08 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. POP structures with dams encircling air gaps and methods for forming the same
US9048222B2 (en) 2013-03-06 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating interconnect structure for package-on-package devices
KR20140119522A (ko) * 2013-04-01 2014-10-10 삼성전자주식회사 패키지-온-패키지 구조를 갖는 반도체 패키지
KR20140130920A (ko) * 2013-05-02 2014-11-12 삼성전자주식회사 패키지 온 패키지 장치 및 이의 제조 방법
TWI533421B (zh) * 2013-06-14 2016-05-11 日月光半導體製造股份有限公司 半導體封裝結構及半導體製程
US8883563B1 (en) * 2013-07-15 2014-11-11 Invensas Corporation Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation
US9034696B2 (en) * 2013-07-15 2015-05-19 Invensas Corporation Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation
US9023691B2 (en) 2013-07-15 2015-05-05 Invensas Corporation Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation
US10153180B2 (en) 2013-10-02 2018-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor bonding structures and methods
FR3011978A1 (fr) * 2013-10-15 2015-04-17 St Microelectronics Grenoble 2 Systeme electronique comprenant des dispositifs electroniques empiles comprenant des puces de circuits integres
KR102229202B1 (ko) * 2013-11-07 2021-03-17 삼성전자주식회사 트렌치 형태의 오프닝을 갖는 반도체 패키지 및 그 제조방법
US9583420B2 (en) 2015-01-23 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufactures
US9613933B2 (en) 2014-03-05 2017-04-04 Intel Corporation Package structure to enhance yield of TMI interconnections
US9281297B2 (en) 2014-03-07 2016-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Solution for reducing poor contact in info packages
US9831206B2 (en) * 2014-03-28 2017-11-28 Intel Corporation LPS solder paste based low cost fine pitch pop interconnect solutions
US9607964B2 (en) * 2014-03-28 2017-03-28 Intel Corporation Method and materials for warpage thermal and interconnect solutions
US9214454B2 (en) 2014-03-31 2015-12-15 Invensas Corporation Batch process fabrication of package-on-package microelectronic assemblies
US9449947B2 (en) 2014-07-01 2016-09-20 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package for thermal dissipation
US9543170B2 (en) 2014-08-22 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of forming the same
US10319607B2 (en) * 2014-08-22 2019-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package structure with organic interposer
US9337135B2 (en) 2014-10-08 2016-05-10 Taiwan Semiconductor Manufacturing Company, Ltd. Pop joint through interposer
KR101619460B1 (ko) * 2014-11-18 2016-05-11 주식회사 프로텍 적층형 반도체 패키지의 제조장치
US9843164B2 (en) 2015-01-27 2017-12-12 TeraDiode, Inc. Solder sealing in high-power laser devices
KR101640341B1 (ko) * 2015-02-04 2016-07-15 앰코 테크놀로지 코리아 주식회사 반도체 패키지
US10032704B2 (en) * 2015-02-13 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing cracking by adjusting opening size in pop packages
US9536808B1 (en) * 2015-06-16 2017-01-03 Macronix International Co., Ltd. Photo pattern method to increase via etching rate
US9679873B2 (en) * 2015-06-18 2017-06-13 Qualcomm Incorporated Low profile integrated circuit (IC) package comprising a plurality of dies
US10231338B2 (en) 2015-06-24 2019-03-12 Intel Corporation Methods of forming trenches in packages structures and structures formed thereby
KR102457119B1 (ko) * 2015-09-14 2022-10-24 삼성전자주식회사 반도체 패키지의 제조 방법
US9735131B2 (en) 2015-11-10 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-stack package-on-package structures
JP2017112325A (ja) * 2015-12-18 2017-06-22 Towa株式会社 半導体装置及びその製造方法
US9773764B2 (en) * 2015-12-22 2017-09-26 Intel Corporation Solid state device miniaturization
US9842829B2 (en) * 2016-04-29 2017-12-12 Taiwan Semiconductor Manufacturing Co., Ltd. Chip package structure and method for forming the same
US9881903B2 (en) * 2016-05-31 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package structure with epoxy flux residue
US10050024B2 (en) * 2016-06-17 2018-08-14 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package and manufacturing method of the same
US9991219B2 (en) 2016-06-23 2018-06-05 Samsung Electro-Mechanics Co., Ltd. Fan-out semiconductor package module
US10269720B2 (en) * 2016-11-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out packaging
TWI723140B (zh) 2016-08-10 2021-04-01 台灣積體電路製造股份有限公司 經封裝裝置以及形成經封裝裝置的方法
WO2018123699A1 (ja) * 2016-12-27 2018-07-05 株式会社村田製作所 高周波モジュール
US9991206B1 (en) * 2017-04-05 2018-06-05 Powertech Technology Inc. Package method including forming electrical paths through a mold layer
KR20180117238A (ko) * 2017-04-18 2018-10-29 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US10510709B2 (en) * 2017-04-20 2019-12-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semicondcutor package and manufacturing method thereof
US10276536B2 (en) 2017-04-28 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of chip package with fan-out structure
US10269587B2 (en) 2017-06-30 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit packages and methods of forming same
US10438930B2 (en) * 2017-06-30 2019-10-08 Intel Corporation Package on package thermal transfer systems and methods
DE102017124076B4 (de) * 2017-06-30 2021-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrierte Schaltungs-Packages und Verfahren zu deren Bildung
KR20190004964A (ko) * 2017-07-05 2019-01-15 삼성전자주식회사 반도체 패키지
DE102018111445B4 (de) 2017-07-17 2022-08-11 Samsung Electronics Co., Ltd. Verfahren zur Herstellung eines Halbleitergehäuses
KR102086364B1 (ko) * 2018-03-05 2020-03-09 삼성전자주식회사 반도체 패키지
KR102448248B1 (ko) * 2018-05-24 2022-09-27 삼성전자주식회사 Pop형 반도체 패키지 및 그 제조 방법
US11075151B2 (en) 2018-06-29 2021-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out package with controllable standoff
US11081369B2 (en) * 2019-02-25 2021-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and manufacturing method thereof
US11063019B2 (en) * 2019-07-17 2021-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure, chip structure and method of fabricating the same
KR102747644B1 (ko) * 2019-07-22 2024-12-27 삼성전자주식회사 반도체 패키지 및 그 제조 방법
KR102698698B1 (ko) 2019-08-05 2024-08-27 삼성전자주식회사 반도체 패키지 장치
US11410968B2 (en) 2019-10-18 2022-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
KR102849154B1 (ko) 2020-04-10 2025-08-21 삼성전자주식회사 반도체 패키지
KR102400533B1 (ko) * 2020-08-12 2022-05-19 삼성전기주식회사 전자 소자 모듈 및 이의 제조방법
KR102836900B1 (ko) 2020-10-12 2025-07-24 삼성전자주식회사 반도체 패키지 및 그 제조방법
CN113035826B (zh) * 2021-02-23 2022-08-19 青岛歌尔智能传感器有限公司 封装模组、封装模组的制作方法及电子设备
US11646255B2 (en) * 2021-03-18 2023-05-09 Taiwan Semiconductor Manufacturing Company Limited Chip package structure including a silicon substrate interposer and methods for forming the same
US20230369232A1 (en) * 2022-05-11 2023-11-16 Intel Corporation Molded interconnect memory on package

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261367B1 (en) * 1999-05-10 2001-07-17 Nordson Corporation Method and apparatus for dispensing liquid material
JP2001244636A (ja) * 2000-03-01 2001-09-07 Ibiden Co Ltd プリント配線板
JP2003198086A (ja) * 2001-12-25 2003-07-11 Fujikura Ltd 回路基板及び積層回路基板並びにそれらの製造方法
US20050048700A1 (en) * 2003-09-02 2005-03-03 Slawomir Rubinsztajn No-flow underfill material having low coefficient of thermal expansion and good solder ball fluxing performance
KR100617071B1 (ko) 2002-12-23 2006-08-30 앰코 테크놀로지 코리아 주식회사 적층형 반도체 패키지 및 그 제조방법
JP2006295119A (ja) * 2005-03-17 2006-10-26 Matsushita Electric Ind Co Ltd 積層型半導体装置
KR20070051165A (ko) 2005-11-14 2007-05-17 삼성전자주식회사 프리 솔더 범프를 갖는 반도체 패키지와, 그를 이용한 적층패키지 및 그의 제조 방법
JP5215605B2 (ja) 2007-07-17 2013-06-19 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP2009302505A (ja) * 2008-05-15 2009-12-24 Panasonic Corp 半導体装置、および半導体装置の製造方法
WO2010052871A1 (ja) 2008-11-06 2010-05-14 住友ベークライト株式会社 電子装置の製造方法および電子装置
JP5259383B2 (ja) * 2008-12-26 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置および半導体システム
WO2010093601A1 (en) * 2009-02-10 2010-08-19 Metabasis Therapeutics, Inc. Novel sulfonic acid-containing thyromimetics, and methods for their use
KR20100095268A (ko) * 2009-02-20 2010-08-30 삼성전자주식회사 반도체 패키지 및 그 제조 방법
KR101583354B1 (ko) 2009-06-01 2016-01-07 삼성전자주식회사 반도체 소자 패키지의 형성방법
KR101685652B1 (ko) * 2009-12-17 2016-12-13 삼성전자주식회사 반도체 패키지들, 그들의 적층 구조와 그 제조 방법들
US8508954B2 (en) * 2009-12-17 2013-08-13 Samsung Electronics Co., Ltd. Systems employing a stacked semiconductor package
JP6045774B2 (ja) * 2010-03-16 2016-12-14 日立化成株式会社 半導体封止充てん用エポキシ樹脂組成物、半導体装置、及びその製造方法
US8299595B2 (en) 2010-03-18 2012-10-30 Stats Chippac Ltd. Integrated circuit package system with package stacking and method of manufacture thereof
KR101078743B1 (ko) * 2010-04-14 2011-11-02 주식회사 하이닉스반도체 스택 패키지
KR101855294B1 (ko) * 2010-06-10 2018-05-08 삼성전자주식회사 반도체 패키지
US8080445B1 (en) * 2010-09-07 2011-12-20 Stats Chippac, Ltd. Semiconductor device and method of forming WLP with semiconductor die embedded within penetrable encapsulant between TSV interposers
TW201230259A (en) * 2010-09-17 2012-07-16 Sumitomo Bakelite Co A semiconductor package and a semiconductor equipment
KR20120031697A (ko) * 2010-09-27 2012-04-04 삼성전자주식회사 패키지 적층 구조 및 그 제조 방법
KR101740483B1 (ko) * 2011-05-02 2017-06-08 삼성전자 주식회사 고정 부재 및 할로겐-프리 패키지간 연결부를 포함하는 적층 패키지
JP5547703B2 (ja) * 2011-10-17 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
KR20130050134A (ko) * 2011-11-07 2013-05-15 삼성전기주식회사 인쇄회로기판 및 그 제조방법
US8658464B2 (en) * 2011-11-16 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Mold chase design for package-on-package applications

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US8779606B2 (en) 2014-07-15
TW201351578A (zh) 2013-12-16
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US20140273348A1 (en) 2014-09-18
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