TWI611524B - 包含密封層之堆疊封裝電子元件及其相關製造方法 - Google Patents
包含密封層之堆疊封裝電子元件及其相關製造方法 Download PDFInfo
- Publication number
- TWI611524B TWI611524B TW102112261A TW102112261A TWI611524B TW I611524 B TWI611524 B TW I611524B TW 102112261 A TW102112261 A TW 102112261A TW 102112261 A TW102112261 A TW 102112261A TW I611524 B TWI611524 B TW I611524B
- Authority
- TW
- Taiwan
- Prior art keywords
- package substrate
- package
- sealing layer
- electronic component
- integrated circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/105—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/0651—Wire or wire-like electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06568—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
- H01L2225/10—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
- H01L2225/1011—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
- H01L2225/1076—Shape of the containers
- H01L2225/1088—Arrangements to limit the height of the assembly
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??10-2012-0038268 | 2012-04-13 | ||
| KR1020120038268A KR101867955B1 (ko) | 2012-04-13 | 2012-04-13 | 패키지 온 패키지 장치 및 이의 제조 방법 |
| US13/734,393 | 2013-01-04 | ||
| US13/734,393 US8779606B2 (en) | 2012-04-13 | 2013-01-04 | Package-on-package electronic devices including sealing layers and related methods of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201351578A TW201351578A (zh) | 2013-12-16 |
| TWI611524B true TWI611524B (zh) | 2018-01-11 |
Family
ID=49324339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102112261A TWI611524B (zh) | 2012-04-13 | 2013-04-08 | 包含密封層之堆疊封裝電子元件及其相關製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8779606B2 (enExample) |
| JP (1) | JP6173753B2 (enExample) |
| KR (1) | KR101867955B1 (enExample) |
| TW (1) | TWI611524B (enExample) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9171792B2 (en) * | 2011-02-28 | 2015-10-27 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages having a side-by-side device arrangement and stacking functionality |
| US8963311B2 (en) | 2012-09-26 | 2015-02-24 | Apple Inc. | PoP structure with electrically insulating material between packages |
| US9263377B2 (en) * | 2012-11-08 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | POP structures with dams encircling air gaps and methods for forming the same |
| US9048222B2 (en) | 2013-03-06 | 2015-06-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating interconnect structure for package-on-package devices |
| KR20140119522A (ko) * | 2013-04-01 | 2014-10-10 | 삼성전자주식회사 | 패키지-온-패키지 구조를 갖는 반도체 패키지 |
| KR20140130920A (ko) * | 2013-05-02 | 2014-11-12 | 삼성전자주식회사 | 패키지 온 패키지 장치 및 이의 제조 방법 |
| TWI533421B (zh) * | 2013-06-14 | 2016-05-11 | 日月光半導體製造股份有限公司 | 半導體封裝結構及半導體製程 |
| US8883563B1 (en) * | 2013-07-15 | 2014-11-11 | Invensas Corporation | Fabrication of microelectronic assemblies having stack terminals coupled by connectors extending through encapsulation |
| US9034696B2 (en) * | 2013-07-15 | 2015-05-19 | Invensas Corporation | Microelectronic assemblies having reinforcing collars on connectors extending through encapsulation |
| US9023691B2 (en) | 2013-07-15 | 2015-05-05 | Invensas Corporation | Microelectronic assemblies with stack terminals coupled by connectors extending through encapsulation |
| US10153180B2 (en) | 2013-10-02 | 2018-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor bonding structures and methods |
| FR3011978A1 (fr) * | 2013-10-15 | 2015-04-17 | St Microelectronics Grenoble 2 | Systeme electronique comprenant des dispositifs electroniques empiles comprenant des puces de circuits integres |
| KR102229202B1 (ko) * | 2013-11-07 | 2021-03-17 | 삼성전자주식회사 | 트렌치 형태의 오프닝을 갖는 반도체 패키지 및 그 제조방법 |
| US9583420B2 (en) | 2015-01-23 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufactures |
| US9613933B2 (en) | 2014-03-05 | 2017-04-04 | Intel Corporation | Package structure to enhance yield of TMI interconnections |
| US9281297B2 (en) | 2014-03-07 | 2016-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Solution for reducing poor contact in info packages |
| US9831206B2 (en) * | 2014-03-28 | 2017-11-28 | Intel Corporation | LPS solder paste based low cost fine pitch pop interconnect solutions |
| US9607964B2 (en) * | 2014-03-28 | 2017-03-28 | Intel Corporation | Method and materials for warpage thermal and interconnect solutions |
| US9214454B2 (en) | 2014-03-31 | 2015-12-15 | Invensas Corporation | Batch process fabrication of package-on-package microelectronic assemblies |
| US9449947B2 (en) | 2014-07-01 | 2016-09-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor package for thermal dissipation |
| US9543170B2 (en) | 2014-08-22 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor packages and methods of forming the same |
| US10319607B2 (en) * | 2014-08-22 | 2019-06-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package-on-package structure with organic interposer |
| US9337135B2 (en) | 2014-10-08 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pop joint through interposer |
| KR101619460B1 (ko) * | 2014-11-18 | 2016-05-11 | 주식회사 프로텍 | 적층형 반도체 패키지의 제조장치 |
| US9843164B2 (en) | 2015-01-27 | 2017-12-12 | TeraDiode, Inc. | Solder sealing in high-power laser devices |
| KR101640341B1 (ko) * | 2015-02-04 | 2016-07-15 | 앰코 테크놀로지 코리아 주식회사 | 반도체 패키지 |
| US10032704B2 (en) * | 2015-02-13 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reducing cracking by adjusting opening size in pop packages |
| US9536808B1 (en) * | 2015-06-16 | 2017-01-03 | Macronix International Co., Ltd. | Photo pattern method to increase via etching rate |
| US9679873B2 (en) * | 2015-06-18 | 2017-06-13 | Qualcomm Incorporated | Low profile integrated circuit (IC) package comprising a plurality of dies |
| US10231338B2 (en) | 2015-06-24 | 2019-03-12 | Intel Corporation | Methods of forming trenches in packages structures and structures formed thereby |
| KR102457119B1 (ko) * | 2015-09-14 | 2022-10-24 | 삼성전자주식회사 | 반도체 패키지의 제조 방법 |
| US9735131B2 (en) | 2015-11-10 | 2017-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-stack package-on-package structures |
| JP2017112325A (ja) * | 2015-12-18 | 2017-06-22 | Towa株式会社 | 半導体装置及びその製造方法 |
| US9773764B2 (en) * | 2015-12-22 | 2017-09-26 | Intel Corporation | Solid state device miniaturization |
| US9842829B2 (en) * | 2016-04-29 | 2017-12-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chip package structure and method for forming the same |
| US9881903B2 (en) * | 2016-05-31 | 2018-01-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package-on-package structure with epoxy flux residue |
| US10050024B2 (en) * | 2016-06-17 | 2018-08-14 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor package and manufacturing method of the same |
| US9991219B2 (en) | 2016-06-23 | 2018-06-05 | Samsung Electro-Mechanics Co., Ltd. | Fan-out semiconductor package module |
| US10269720B2 (en) * | 2016-11-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrated fan-out packaging |
| TWI723140B (zh) | 2016-08-10 | 2021-04-01 | 台灣積體電路製造股份有限公司 | 經封裝裝置以及形成經封裝裝置的方法 |
| WO2018123699A1 (ja) * | 2016-12-27 | 2018-07-05 | 株式会社村田製作所 | 高周波モジュール |
| US9991206B1 (en) * | 2017-04-05 | 2018-06-05 | Powertech Technology Inc. | Package method including forming electrical paths through a mold layer |
| KR20180117238A (ko) * | 2017-04-18 | 2018-10-29 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| US10510709B2 (en) * | 2017-04-20 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semicondcutor package and manufacturing method thereof |
| US10276536B2 (en) | 2017-04-28 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of chip package with fan-out structure |
| US10269587B2 (en) | 2017-06-30 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit packages and methods of forming same |
| US10438930B2 (en) * | 2017-06-30 | 2019-10-08 | Intel Corporation | Package on package thermal transfer systems and methods |
| DE102017124076B4 (de) * | 2017-06-30 | 2021-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrierte Schaltungs-Packages und Verfahren zu deren Bildung |
| KR20190004964A (ko) * | 2017-07-05 | 2019-01-15 | 삼성전자주식회사 | 반도체 패키지 |
| DE102018111445B4 (de) | 2017-07-17 | 2022-08-11 | Samsung Electronics Co., Ltd. | Verfahren zur Herstellung eines Halbleitergehäuses |
| KR102086364B1 (ko) * | 2018-03-05 | 2020-03-09 | 삼성전자주식회사 | 반도체 패키지 |
| KR102448248B1 (ko) * | 2018-05-24 | 2022-09-27 | 삼성전자주식회사 | Pop형 반도체 패키지 및 그 제조 방법 |
| US11075151B2 (en) | 2018-06-29 | 2021-07-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fan-out package with controllable standoff |
| US11081369B2 (en) * | 2019-02-25 | 2021-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure and manufacturing method thereof |
| US11063019B2 (en) * | 2019-07-17 | 2021-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package structure, chip structure and method of fabricating the same |
| KR102747644B1 (ko) * | 2019-07-22 | 2024-12-27 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| KR102698698B1 (ko) | 2019-08-05 | 2024-08-27 | 삼성전자주식회사 | 반도체 패키지 장치 |
| US11410968B2 (en) | 2019-10-18 | 2022-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of forming the same |
| KR102849154B1 (ko) | 2020-04-10 | 2025-08-21 | 삼성전자주식회사 | 반도체 패키지 |
| KR102400533B1 (ko) * | 2020-08-12 | 2022-05-19 | 삼성전기주식회사 | 전자 소자 모듈 및 이의 제조방법 |
| KR102836900B1 (ko) | 2020-10-12 | 2025-07-24 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
| CN113035826B (zh) * | 2021-02-23 | 2022-08-19 | 青岛歌尔智能传感器有限公司 | 封装模组、封装模组的制作方法及电子设备 |
| US11646255B2 (en) * | 2021-03-18 | 2023-05-09 | Taiwan Semiconductor Manufacturing Company Limited | Chip package structure including a silicon substrate interposer and methods for forming the same |
| US20230369232A1 (en) * | 2022-05-11 | 2023-11-16 | Intel Corporation | Molded interconnect memory on package |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003198086A (ja) * | 2001-12-25 | 2003-07-11 | Fujikura Ltd | 回路基板及び積層回路基板並びにそれらの製造方法 |
| CN1875068A (zh) * | 2003-09-02 | 2006-12-06 | 通用电气公司 | 具有低热膨胀系数和良好的焊球助熔性能的不流动的底层填充材料 |
| US20090283900A1 (en) * | 2008-05-15 | 2009-11-19 | Panasonic Corporation | Semiconductor device and manufacturing method for semiconductor device |
| US20110149493A1 (en) * | 2009-12-17 | 2011-06-23 | Samsung Electronics Co., Ltd. | Stacked semiconductor packages, methods of fabricating the same, and/or systems employing the same |
| JP2012015554A (ja) * | 2011-10-17 | 2012-01-19 | Renesas Electronics Corp | 半導体装置の製造方法、および積層型半導体装置の製造方法 |
| US20120046364A1 (en) * | 2009-02-10 | 2012-02-23 | Metabasis Therapeutics, Inc. | Novel Sulfonic Acid-Containing Thyromimetics, and Methods for Their Use |
| US20120056321A1 (en) * | 2010-09-07 | 2012-03-08 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming WLP With Semiconductor Die Embedded Within Penetrable Encapsulant Between TSV Interposers |
| WO2012035972A1 (ja) * | 2010-09-17 | 2012-03-22 | 住友ベークライト株式会社 | 半導体パッケージおよび半導体装置 |
| US20120074586A1 (en) * | 2010-09-27 | 2012-03-29 | Samsung Electronics Co., Ltd | Methods of fabricating package stack structure and method of mounting package stack structure on system board |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6261367B1 (en) * | 1999-05-10 | 2001-07-17 | Nordson Corporation | Method and apparatus for dispensing liquid material |
| JP2001244636A (ja) * | 2000-03-01 | 2001-09-07 | Ibiden Co Ltd | プリント配線板 |
| KR100617071B1 (ko) | 2002-12-23 | 2006-08-30 | 앰코 테크놀로지 코리아 주식회사 | 적층형 반도체 패키지 및 그 제조방법 |
| JP2006295119A (ja) * | 2005-03-17 | 2006-10-26 | Matsushita Electric Ind Co Ltd | 積層型半導体装置 |
| KR20070051165A (ko) | 2005-11-14 | 2007-05-17 | 삼성전자주식회사 | 프리 솔더 범프를 갖는 반도체 패키지와, 그를 이용한 적층패키지 및 그의 제조 방법 |
| JP5215605B2 (ja) | 2007-07-17 | 2013-06-19 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
| WO2010052871A1 (ja) | 2008-11-06 | 2010-05-14 | 住友ベークライト株式会社 | 電子装置の製造方法および電子装置 |
| JP5259383B2 (ja) * | 2008-12-26 | 2013-08-07 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体システム |
| KR20100095268A (ko) * | 2009-02-20 | 2010-08-30 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| KR101583354B1 (ko) | 2009-06-01 | 2016-01-07 | 삼성전자주식회사 | 반도체 소자 패키지의 형성방법 |
| KR101685652B1 (ko) * | 2009-12-17 | 2016-12-13 | 삼성전자주식회사 | 반도체 패키지들, 그들의 적층 구조와 그 제조 방법들 |
| JP6045774B2 (ja) * | 2010-03-16 | 2016-12-14 | 日立化成株式会社 | 半導体封止充てん用エポキシ樹脂組成物、半導体装置、及びその製造方法 |
| US8299595B2 (en) | 2010-03-18 | 2012-10-30 | Stats Chippac Ltd. | Integrated circuit package system with package stacking and method of manufacture thereof |
| KR101078743B1 (ko) * | 2010-04-14 | 2011-11-02 | 주식회사 하이닉스반도체 | 스택 패키지 |
| KR101855294B1 (ko) * | 2010-06-10 | 2018-05-08 | 삼성전자주식회사 | 반도체 패키지 |
| KR101740483B1 (ko) * | 2011-05-02 | 2017-06-08 | 삼성전자 주식회사 | 고정 부재 및 할로겐-프리 패키지간 연결부를 포함하는 적층 패키지 |
| KR20130050134A (ko) * | 2011-11-07 | 2013-05-15 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
| US8658464B2 (en) * | 2011-11-16 | 2014-02-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mold chase design for package-on-package applications |
-
2012
- 2012-04-13 KR KR1020120038268A patent/KR101867955B1/ko active Active
-
2013
- 2013-01-04 US US13/734,393 patent/US8779606B2/en active Active
- 2013-04-08 TW TW102112261A patent/TWI611524B/zh active
- 2013-04-10 JP JP2013081768A patent/JP6173753B2/ja active Active
-
2014
- 2014-05-28 US US14/288,440 patent/US9245867B2/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003198086A (ja) * | 2001-12-25 | 2003-07-11 | Fujikura Ltd | 回路基板及び積層回路基板並びにそれらの製造方法 |
| CN1875068A (zh) * | 2003-09-02 | 2006-12-06 | 通用电气公司 | 具有低热膨胀系数和良好的焊球助熔性能的不流动的底层填充材料 |
| US20090283900A1 (en) * | 2008-05-15 | 2009-11-19 | Panasonic Corporation | Semiconductor device and manufacturing method for semiconductor device |
| US20120046364A1 (en) * | 2009-02-10 | 2012-02-23 | Metabasis Therapeutics, Inc. | Novel Sulfonic Acid-Containing Thyromimetics, and Methods for Their Use |
| US20110149493A1 (en) * | 2009-12-17 | 2011-06-23 | Samsung Electronics Co., Ltd. | Stacked semiconductor packages, methods of fabricating the same, and/or systems employing the same |
| US20120056321A1 (en) * | 2010-09-07 | 2012-03-08 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming WLP With Semiconductor Die Embedded Within Penetrable Encapsulant Between TSV Interposers |
| WO2012035972A1 (ja) * | 2010-09-17 | 2012-03-22 | 住友ベークライト株式会社 | 半導体パッケージおよび半導体装置 |
| US20120074586A1 (en) * | 2010-09-27 | 2012-03-29 | Samsung Electronics Co., Ltd | Methods of fabricating package stack structure and method of mounting package stack structure on system board |
| JP2012015554A (ja) * | 2011-10-17 | 2012-01-19 | Renesas Electronics Corp | 半導体装置の製造方法、および積層型半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9245867B2 (en) | 2016-01-26 |
| JP2013222966A (ja) | 2013-10-28 |
| KR20130116100A (ko) | 2013-10-23 |
| US8779606B2 (en) | 2014-07-15 |
| TW201351578A (zh) | 2013-12-16 |
| KR101867955B1 (ko) | 2018-06-15 |
| US20140273348A1 (en) | 2014-09-18 |
| US20130270685A1 (en) | 2013-10-17 |
| JP6173753B2 (ja) | 2017-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI611524B (zh) | 包含密封層之堆疊封裝電子元件及其相關製造方法 | |
| US7279789B2 (en) | Thermally enhanced three-dimensional package and method for manufacturing the same | |
| JP5579402B2 (ja) | 半導体装置及びその製造方法並びに電子装置 | |
| US9349713B2 (en) | Semiconductor package stack structure having interposer substrate | |
| US8829686B2 (en) | Package-on-package assembly including adhesive containment element | |
| US20150221625A1 (en) | Semiconductor package having a dissipating plate | |
| TWI724744B (zh) | 半導體裝置及半導體裝置之製造方法 | |
| US9793251B2 (en) | Semiconductor package and manufacturing method thereof | |
| CN105453261A (zh) | 封装上封装堆叠微电子结构 | |
| CN103531547B (zh) | 半导体封装件及其形成方法 | |
| TWI590346B (zh) | 用以形成高密度穿模互連的方法 | |
| TWI722307B (zh) | 具有多層囊封物之半導體裝置及相關系統、裝置及方法 | |
| CN103208432A (zh) | 层叠封装器件的制造方法 | |
| US8981543B2 (en) | Semiconductor package and method of forming the same | |
| CN116417356B (zh) | 芯片封装方法、芯片封装模块和内埋衬底式芯片封装结构 | |
| KR20140007992A (ko) | 반도체 패키지 및 이의 제조 방법 | |
| TW201810547A (zh) | 半導體裝置及半導體裝置之製造方法 | |
| US9412712B2 (en) | Semiconductor package and method of manufacturing the same | |
| US20160211236A1 (en) | Semiconductor package and method of forming the same | |
| JP2014022738A (ja) | 半導体パッケージ及びその製造方法 | |
| KR20130123958A (ko) | 반도체 장치 및 이의 제조 방법 | |
| US20090020886A1 (en) | Semiconductor device and method of fabricating the same | |
| CN115700908A (zh) | 半导体装置及半导体装置的制造方法 |