JP6139578B2 - 装置および方法 - Google Patents

装置および方法 Download PDF

Info

Publication number
JP6139578B2
JP6139578B2 JP2015020306A JP2015020306A JP6139578B2 JP 6139578 B2 JP6139578 B2 JP 6139578B2 JP 2015020306 A JP2015020306 A JP 2015020306A JP 2015020306 A JP2015020306 A JP 2015020306A JP 6139578 B2 JP6139578 B2 JP 6139578B2
Authority
JP
Japan
Prior art keywords
solder ball
solder balls
solder
substrate
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015020306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015170854A (ja
Inventor
ボニス、トーマス ジェイ. デ
ボニス、トーマス ジェイ. デ
メイ、リリア
エス. シズ、ラジェン
エス. シズ、ラジェン
ピー. レナヴィカー、ムクル
ピー. レナヴィカー、ムクル
エー. ダニ、アシャイ
エー. ダニ、アシャイ
アール. プラック、エドワード
アール. プラック、エドワード
エル. デッピシュ、カール
エル. デッピシュ、カール
エム. プラカシュ、アンナ
エム. プラカシュ、アンナ
(ジュニア)、ジェームス シー. マタヤバス
(ジュニア)、ジェームス シー. マタヤバス
ジエピン ザン、ジェイソン
ジエピン ザン、ジェイソン
アール. アラヴァムダン、スリニヴァサ
アール. アラヴァムダン、スリニヴァサ
リン、チャン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of JP2015170854A publication Critical patent/JP2015170854A/ja
Application granted granted Critical
Publication of JP6139578B2 publication Critical patent/JP6139578B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/1302Disposition
    • H01L2224/13023Disposition the whole bump connector protruding from the surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06517Bump or bump-like direct electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/0652Bump or bump-like direct electrical connections from substrate to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06548Conductive via connections through the substrate, container, or encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06582Housing for the assembly, e.g. chip scale package [CSP]
    • H01L2225/06586Housing with external bump or bump-like connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1017All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/10All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L2225/1005All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10
    • H01L2225/1011All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices having separate containers the devices being integrated devices of class H10 the containers being in a stacked arrangement
    • H01L2225/1047Details of electrical connections between containers
    • H01L2225/1058Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12042LASER
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/37Effects of the manufacturing process
    • H01L2924/37001Yield

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)
JP2015020306A 2014-03-05 2015-02-04 装置および方法 Active JP6139578B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/198,479 US9613933B2 (en) 2014-03-05 2014-03-05 Package structure to enhance yield of TMI interconnections
US14/198,479 2014-03-05

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017088851A Division JP6593762B2 (ja) 2014-03-05 2017-04-27 装置および方法

Publications (2)

Publication Number Publication Date
JP2015170854A JP2015170854A (ja) 2015-09-28
JP6139578B2 true JP6139578B2 (ja) 2017-05-31

Family

ID=54018122

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2015020306A Active JP6139578B2 (ja) 2014-03-05 2015-02-04 装置および方法
JP2017088851A Active JP6593762B2 (ja) 2014-03-05 2017-04-27 装置および方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017088851A Active JP6593762B2 (ja) 2014-03-05 2017-04-27 装置および方法

Country Status (2)

Country Link
US (2) US9613933B2 (enExample)
JP (2) JP6139578B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102711053B1 (ko) * 2016-10-04 2024-09-30 스카이워크스 솔루션즈, 인코포레이티드 오버몰드 구조체를 갖는 양면 라디오-주파수 패키지
CN110832636B (zh) * 2017-06-20 2023-09-08 株式会社村田制作所 模块及其制造方法
US10573622B2 (en) * 2017-09-29 2020-02-25 Intel Corporation Methods of forming joint structures for surface mount packages
CN108346952B (zh) * 2018-01-25 2020-11-24 番禺得意精密电子工业有限公司 电连接器固持装置
US11201136B2 (en) 2020-03-10 2021-12-14 International Business Machines Corporation High bandwidth module
US11955396B2 (en) * 2020-11-27 2024-04-09 Yibu Semiconductor Co., Ltd. Semiconductor packaging method, semiconductor assembly and electronic device comprising semiconductor assembly
US12218090B2 (en) 2020-12-25 2025-02-04 Yibu Semiconductor Co., Ltd. Semiconductor packaging method, semiconductor assembly and electronic device comprising semiconductor assembly
US12154884B2 (en) 2021-02-01 2024-11-26 Yibu Semiconductor Co., Ltd. Semiconductor packaging method, semiconductor assembly and electronic device comprising semiconductor assembly
CN119174022A (zh) * 2022-06-01 2024-12-20 富士胶片株式会社 全固态锂离子二次电池及全固态锂离子二次电池的制造方法

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334693B2 (ja) * 1999-10-08 2002-10-15 日本電気株式会社 半導体装置の製造方法
SG99331A1 (en) * 2000-01-13 2003-10-27 Hitachi Ltd Method of producing electronic part with bumps and method of producing elctronic part
US6504242B1 (en) 2001-11-15 2003-01-07 Intel Corporation Electronic assembly having a wetting layer on a thermally conductive heat spreader
US6597575B1 (en) 2002-01-04 2003-07-22 Intel Corporation Electronic packages having good reliability comprising low modulus thermal interface materials
US7036573B2 (en) 2002-02-08 2006-05-02 Intel Corporation Polymer with solder pre-coated fillers for thermal interface materials
US7436058B2 (en) 2002-05-09 2008-10-14 Intel Corporation Reactive solder material
JP4086657B2 (ja) * 2002-12-27 2008-05-14 富士通株式会社 積層型半導体装置
US6841867B2 (en) 2002-12-30 2005-01-11 Intel Corporation Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials
US7252877B2 (en) 2003-02-04 2007-08-07 Intel Corporation Polymer matrices for polymer solder hybrid materials
JP2004349495A (ja) * 2003-03-25 2004-12-09 Seiko Epson Corp 半導体装置、電子デバイス、電子機器および半導体装置の製造方法
US7014093B2 (en) 2003-06-26 2006-03-21 Intel Corporation Multi-layer polymer-solder hybrid thermal interface material for integrated heat spreader and method of making same
US7527090B2 (en) 2003-06-30 2009-05-05 Intel Corporation Heat dissipating device with preselected designed interface for thermal interface materials
US7253523B2 (en) 2003-07-29 2007-08-07 Intel Corporation Reworkable thermal interface material
US7170188B2 (en) 2004-06-30 2007-01-30 Intel Corporation Package stress management
JP4137112B2 (ja) * 2005-10-20 2008-08-20 日本テキサス・インスツルメンツ株式会社 電子部品の製造方法
US7638868B2 (en) * 2006-08-16 2009-12-29 Tessera, Inc. Microelectronic package
US7823762B2 (en) * 2006-09-28 2010-11-02 Ibiden Co., Ltd. Manufacturing method and manufacturing apparatus of printed wiring board
JP5044189B2 (ja) * 2006-10-24 2012-10-10 リンテック株式会社 複合型半導体装置の製造方法、及び複合型半導体装置
JP2009021465A (ja) * 2007-07-13 2009-01-29 Panasonic Corp 半導体装置実装構造体およびその製造方法ならびに半導体装置の剥離方法
KR100923887B1 (ko) * 2008-01-29 2009-10-28 (주)덕산테코피아 반도체 패키지용 솔더볼
JP5581576B2 (ja) * 2008-04-02 2014-09-03 日立化成株式会社 フラックス活性剤、接着剤樹脂組成物、接着ペースト、接着フィルム、半導体装置の製造方法、及び半導体装置
US7851894B1 (en) * 2008-12-23 2010-12-14 Amkor Technology, Inc. System and method for shielding of package on package (PoP) assemblies
JP2010205934A (ja) * 2009-03-03 2010-09-16 Panasonic Corp 回路部品内蔵モジュール、および回路部品内蔵モジュールの製造方法
US9006887B2 (en) * 2009-03-04 2015-04-14 Intel Corporation Forming sacrificial composite materials for package-on-package architectures and structures formed thereby
KR101055509B1 (ko) 2009-03-19 2011-08-08 삼성전기주식회사 전자부품 내장형 인쇄회로기판
KR101077410B1 (ko) 2009-05-15 2011-10-26 삼성전기주식회사 방열부재를 구비한 전자부품 내장형 인쇄회로기판 및 그 제조방법
KR20100132823A (ko) 2009-06-10 2010-12-20 삼성전기주식회사 플립칩용 기판 및 그 제조방법
KR101194549B1 (ko) 2009-06-12 2012-10-25 삼성전기주식회사 인쇄회로기판의 제조방법
US8430969B2 (en) * 2009-07-20 2013-04-30 Texas Instruments Incorporated Method for exposing and cleaning insulating coats from metal contact surfaces
KR20110030152A (ko) 2009-09-17 2011-03-23 삼성전기주식회사 패키지기판 및 그 제조방법
KR101037450B1 (ko) 2009-09-23 2011-05-26 삼성전기주식회사 패키지 기판
US20110076472A1 (en) 2009-09-29 2011-03-31 Jin Ho Kim Package substrate
KR101084910B1 (ko) 2009-10-12 2011-11-17 삼성전기주식회사 전자부품 내장형 인쇄회로기판 및 그 제조방법
KR20110039879A (ko) 2009-10-12 2011-04-20 삼성전기주식회사 전자부품 내장형 인쇄회로기판 및 그 제조방법
JP5525793B2 (ja) * 2009-10-19 2014-06-18 パナソニック株式会社 半導体装置
KR101095094B1 (ko) 2009-10-26 2011-12-16 삼성전기주식회사 웨이퍼 레벨 패키지의 제조방법
KR101095130B1 (ko) 2009-12-01 2011-12-16 삼성전기주식회사 전자부품 내장형 인쇄회로기판 및 그 제조방법
US20110240927A1 (en) 2009-12-23 2011-10-06 Samsung Electro-Mechanics Co., Ltd. Conductive polymer composition and conductive film formed using the same
US20110147668A1 (en) 2009-12-23 2011-06-23 Sang Hwa Kim Conductive polymer composition and conductive film prepared using the same
KR101109214B1 (ko) 2009-12-28 2012-01-30 삼성전기주식회사 패키지 기판 및 그 제조방법
KR101119303B1 (ko) 2010-01-06 2012-03-20 삼성전기주식회사 전자부품 내장형 인쇄회로기판 및 그 제조방법
KR101077408B1 (ko) 2010-02-05 2011-10-26 서강대학교산학협력단 Cmos 이미지 센서
KR101067109B1 (ko) 2010-04-26 2011-09-26 삼성전기주식회사 전자부품 내장형 인쇄회로기판 및 그 제조방법
KR20120026855A (ko) 2010-09-10 2012-03-20 삼성전기주식회사 임베디드 볼 그리드 어레이 기판 및 그 제조 방법
KR101289140B1 (ko) 2010-09-28 2013-07-23 삼성전기주식회사 임베디드 인쇄회로기판 및 그 제조방법
KR20120035673A (ko) 2010-10-06 2012-04-16 삼성전기주식회사 패키지기판
KR101095161B1 (ko) 2010-10-07 2011-12-16 삼성전기주식회사 전자부품 내장형 인쇄회로기판
KR20120050755A (ko) 2010-11-11 2012-05-21 삼성전기주식회사 반도체 패키지 기판 및 그 제조방법
KR101719822B1 (ko) 2010-11-24 2017-03-27 삼성전기주식회사 솔더링 연결핀, 상기 솔더링 연결핀을 이용한 반도체 패키지 기판 및 반도체칩의 실장방법
KR20120069443A (ko) 2010-12-20 2012-06-28 삼성전기주식회사 패키지 기판용 리드핀과 상기 패키지 기판용 리드핀을 포함하는 반도체 패키지 인쇄회로기판
KR101204233B1 (ko) 2010-12-22 2012-11-26 삼성전기주식회사 전자부품 내장형 인쇄회로기판 및 그 제조방법
KR101194469B1 (ko) 2010-12-24 2012-10-24 삼성전기주식회사 패키지용 기판 및 그 제조방법
KR101255912B1 (ko) 2010-12-31 2013-04-17 삼성전기주식회사 멀티 칩 패키지
US8162203B1 (en) * 2011-02-18 2012-04-24 International Business Machines Corporation Spherical solder reflow method
JP2012216836A (ja) * 2011-03-31 2012-11-08 Mitsubishi Chemicals Corp 三次元集積回路積層体
WO2012133818A1 (ja) 2011-03-31 2012-10-04 三菱化学株式会社 三次元集積回路積層体、及び三次元集積回路積層体用の層間充填材
JP5837339B2 (ja) * 2011-06-20 2015-12-24 新光電気工業株式会社 半導体装置の製造方法及び半導体装置
KR101237668B1 (ko) 2011-08-10 2013-02-26 삼성전기주식회사 반도체 패키지 기판
WO2013095670A1 (en) 2011-12-23 2013-06-27 Intel Corporation Hybrid low metal loading flux
KR20130082298A (ko) 2012-01-11 2013-07-19 삼성전자주식회사 패키지 온 패키지 장치의 제조 방법 및 이에 의해 제조된 장치
JP2013225638A (ja) 2012-03-23 2013-10-31 Toshiba Corp 半導体装置
US8704354B2 (en) * 2012-03-28 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package structures and methods for forming the same
KR101867955B1 (ko) * 2012-04-13 2018-06-15 삼성전자주식회사 패키지 온 패키지 장치 및 이의 제조 방법
JP2014033084A (ja) * 2012-08-03 2014-02-20 Panasonic Corp 積層パッケージ構造体の製造方法、組み立て装置、および製造システム
US9283641B2 (en) 2012-09-25 2016-03-15 Intel Corporation Flux materials for heated solder placement and associated techniques and configurations
US8809181B2 (en) 2012-11-07 2014-08-19 Intel Corporation Multi-solder techniques and configurations for integrated circuit package assembly
US9105626B2 (en) * 2012-11-21 2015-08-11 Qualcomm Incorporated High-density package-on-package structure
US20140151096A1 (en) 2012-12-04 2014-06-05 Hongjin Jiang Low temperature/high temperature solder hybrid solder interconnects
US9064971B2 (en) 2012-12-20 2015-06-23 Intel Corporation Methods of forming ultra thin package structures including low temperature solder and structures formed therby
US20140175160A1 (en) 2012-12-21 2014-06-26 Rajen S. Sidhu Solder paste material technology for elimination of high warpage surface mount assembly defects
US9394619B2 (en) 2013-03-12 2016-07-19 Intel Corporation Methods of adding dopants to conductive interconnect structures in substrate technologies and structures formed thereby
US8896110B2 (en) 2013-03-13 2014-11-25 Intel Corporation Paste thermal interface materials
US8987918B2 (en) * 2013-03-14 2015-03-24 Intel Corporation Interconnect structures with polymer core
US8920934B2 (en) * 2013-03-29 2014-12-30 Intel Corporation Hybrid solder and filled paste in microelectronic packaging
KR102067155B1 (ko) * 2013-06-03 2020-01-16 삼성전자주식회사 연결단자를 갖는 반도체 장치 및 그의 제조방법

Also Published As

Publication number Publication date
JP2015170854A (ja) 2015-09-28
US20150255415A1 (en) 2015-09-10
US20170207152A1 (en) 2017-07-20
JP6593762B2 (ja) 2019-10-23
US9613933B2 (en) 2017-04-04
US10049971B2 (en) 2018-08-14
JP2017126806A (ja) 2017-07-20

Similar Documents

Publication Publication Date Title
JP6593762B2 (ja) 装置および方法
TWI459505B (zh) 電互連結構及方法
TWI582868B (zh) Semiconductor device manufacturing method
JP5874683B2 (ja) 実装基板の製造方法、および電子機器の製造方法
KR101569577B1 (ko) 패키지 온 패키지 구조물 및 이의 형성 방법
JP4137112B2 (ja) 電子部品の製造方法
JP6242231B2 (ja) 半導体装置及びその製造方法
TW201923985A (zh) 具有多層囊封物之半導體裝置及相關系統、裝置及方法
JP5272922B2 (ja) 半導体装置及びその製造方法
TW201705414A (zh) 用來控制積體電路封裝扭曲的可移除式基板
KR20010050870A (ko) 반도체 장치 제조 방법
US6722557B2 (en) Flux cleaning method and method of manufacturing semiconductor device
US6227434B1 (en) Reworking of a ball grid array module
US8183697B2 (en) Apparatus and methods of forming an interconnect between a workpiece and substrate
WO2010070779A1 (ja) 異方性導電樹脂、基板接続構造及び電子機器
US20150251278A1 (en) Solder ball and circuit board including the same
CN104981092A (zh) 表面镀层和包括该表面镀层的半导体封装件
JP2008244206A (ja) 半導体装置の製造方法
JP2004288771A (ja) 電子部品
JP6426453B2 (ja) 回路基板の製造方法
JP2005150446A (ja) 電子部品の製造方法
KR101261926B1 (ko) 볼 그리드 어레이 반도체패키지의 솔더링 방법
TW200839969A (en) Semiconductor package and the method for manufacturing the same
JP2966346B2 (ja) 半導体装置の実装体
CN120914110A (zh) 一种芯片封装方法及芯片封装结构

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160119

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160407

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160913

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20161208

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170328

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170427

R150 Certificate of patent or registration of utility model

Ref document number: 6139578

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250