JP6139578B2 - 装置および方法 - Google Patents
装置および方法 Download PDFInfo
- Publication number
- JP6139578B2 JP6139578B2 JP2015020306A JP2015020306A JP6139578B2 JP 6139578 B2 JP6139578 B2 JP 6139578B2 JP 2015020306 A JP2015020306 A JP 2015020306A JP 2015020306 A JP2015020306 A JP 2015020306A JP 6139578 B2 JP6139578 B2 JP 6139578B2
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- Prior art keywords
- solder ball
- solder balls
- solder
- substrate
- die
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/198,479 US9613933B2 (en) | 2014-03-05 | 2014-03-05 | Package structure to enhance yield of TMI interconnections |
| US14/198,479 | 2014-03-05 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017088851A Division JP6593762B2 (ja) | 2014-03-05 | 2017-04-27 | 装置および方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015170854A JP2015170854A (ja) | 2015-09-28 |
| JP6139578B2 true JP6139578B2 (ja) | 2017-05-31 |
Family
ID=54018122
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015020306A Active JP6139578B2 (ja) | 2014-03-05 | 2015-02-04 | 装置および方法 |
| JP2017088851A Active JP6593762B2 (ja) | 2014-03-05 | 2017-04-27 | 装置および方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017088851A Active JP6593762B2 (ja) | 2014-03-05 | 2017-04-27 | 装置および方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US9613933B2 (enExample) |
| JP (2) | JP6139578B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102711053B1 (ko) * | 2016-10-04 | 2024-09-30 | 스카이워크스 솔루션즈, 인코포레이티드 | 오버몰드 구조체를 갖는 양면 라디오-주파수 패키지 |
| CN110832636B (zh) * | 2017-06-20 | 2023-09-08 | 株式会社村田制作所 | 模块及其制造方法 |
| US10573622B2 (en) * | 2017-09-29 | 2020-02-25 | Intel Corporation | Methods of forming joint structures for surface mount packages |
| CN108346952B (zh) * | 2018-01-25 | 2020-11-24 | 番禺得意精密电子工业有限公司 | 电连接器固持装置 |
| US11201136B2 (en) | 2020-03-10 | 2021-12-14 | International Business Machines Corporation | High bandwidth module |
| US11955396B2 (en) * | 2020-11-27 | 2024-04-09 | Yibu Semiconductor Co., Ltd. | Semiconductor packaging method, semiconductor assembly and electronic device comprising semiconductor assembly |
| US12218090B2 (en) | 2020-12-25 | 2025-02-04 | Yibu Semiconductor Co., Ltd. | Semiconductor packaging method, semiconductor assembly and electronic device comprising semiconductor assembly |
| US12154884B2 (en) | 2021-02-01 | 2024-11-26 | Yibu Semiconductor Co., Ltd. | Semiconductor packaging method, semiconductor assembly and electronic device comprising semiconductor assembly |
| CN119174022A (zh) * | 2022-06-01 | 2024-12-20 | 富士胶片株式会社 | 全固态锂离子二次电池及全固态锂离子二次电池的制造方法 |
Family Cites Families (75)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3334693B2 (ja) * | 1999-10-08 | 2002-10-15 | 日本電気株式会社 | 半導体装置の製造方法 |
| SG99331A1 (en) * | 2000-01-13 | 2003-10-27 | Hitachi Ltd | Method of producing electronic part with bumps and method of producing elctronic part |
| US6504242B1 (en) | 2001-11-15 | 2003-01-07 | Intel Corporation | Electronic assembly having a wetting layer on a thermally conductive heat spreader |
| US6597575B1 (en) | 2002-01-04 | 2003-07-22 | Intel Corporation | Electronic packages having good reliability comprising low modulus thermal interface materials |
| US7036573B2 (en) | 2002-02-08 | 2006-05-02 | Intel Corporation | Polymer with solder pre-coated fillers for thermal interface materials |
| US7436058B2 (en) | 2002-05-09 | 2008-10-14 | Intel Corporation | Reactive solder material |
| JP4086657B2 (ja) * | 2002-12-27 | 2008-05-14 | 富士通株式会社 | 積層型半導体装置 |
| US6841867B2 (en) | 2002-12-30 | 2005-01-11 | Intel Corporation | Gel thermal interface materials comprising fillers having low melting point and electronic packages comprising these gel thermal interface materials |
| US7252877B2 (en) | 2003-02-04 | 2007-08-07 | Intel Corporation | Polymer matrices for polymer solder hybrid materials |
| JP2004349495A (ja) * | 2003-03-25 | 2004-12-09 | Seiko Epson Corp | 半導体装置、電子デバイス、電子機器および半導体装置の製造方法 |
| US7014093B2 (en) | 2003-06-26 | 2006-03-21 | Intel Corporation | Multi-layer polymer-solder hybrid thermal interface material for integrated heat spreader and method of making same |
| US7527090B2 (en) | 2003-06-30 | 2009-05-05 | Intel Corporation | Heat dissipating device with preselected designed interface for thermal interface materials |
| US7253523B2 (en) | 2003-07-29 | 2007-08-07 | Intel Corporation | Reworkable thermal interface material |
| US7170188B2 (en) | 2004-06-30 | 2007-01-30 | Intel Corporation | Package stress management |
| JP4137112B2 (ja) * | 2005-10-20 | 2008-08-20 | 日本テキサス・インスツルメンツ株式会社 | 電子部品の製造方法 |
| US7638868B2 (en) * | 2006-08-16 | 2009-12-29 | Tessera, Inc. | Microelectronic package |
| US7823762B2 (en) * | 2006-09-28 | 2010-11-02 | Ibiden Co., Ltd. | Manufacturing method and manufacturing apparatus of printed wiring board |
| JP5044189B2 (ja) * | 2006-10-24 | 2012-10-10 | リンテック株式会社 | 複合型半導体装置の製造方法、及び複合型半導体装置 |
| JP2009021465A (ja) * | 2007-07-13 | 2009-01-29 | Panasonic Corp | 半導体装置実装構造体およびその製造方法ならびに半導体装置の剥離方法 |
| KR100923887B1 (ko) * | 2008-01-29 | 2009-10-28 | (주)덕산테코피아 | 반도체 패키지용 솔더볼 |
| JP5581576B2 (ja) * | 2008-04-02 | 2014-09-03 | 日立化成株式会社 | フラックス活性剤、接着剤樹脂組成物、接着ペースト、接着フィルム、半導体装置の製造方法、及び半導体装置 |
| US7851894B1 (en) * | 2008-12-23 | 2010-12-14 | Amkor Technology, Inc. | System and method for shielding of package on package (PoP) assemblies |
| JP2010205934A (ja) * | 2009-03-03 | 2010-09-16 | Panasonic Corp | 回路部品内蔵モジュール、および回路部品内蔵モジュールの製造方法 |
| US9006887B2 (en) * | 2009-03-04 | 2015-04-14 | Intel Corporation | Forming sacrificial composite materials for package-on-package architectures and structures formed thereby |
| KR101055509B1 (ko) | 2009-03-19 | 2011-08-08 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 |
| KR101077410B1 (ko) | 2009-05-15 | 2011-10-26 | 삼성전기주식회사 | 방열부재를 구비한 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
| KR20100132823A (ko) | 2009-06-10 | 2010-12-20 | 삼성전기주식회사 | 플립칩용 기판 및 그 제조방법 |
| KR101194549B1 (ko) | 2009-06-12 | 2012-10-25 | 삼성전기주식회사 | 인쇄회로기판의 제조방법 |
| US8430969B2 (en) * | 2009-07-20 | 2013-04-30 | Texas Instruments Incorporated | Method for exposing and cleaning insulating coats from metal contact surfaces |
| KR20110030152A (ko) | 2009-09-17 | 2011-03-23 | 삼성전기주식회사 | 패키지기판 및 그 제조방법 |
| KR101037450B1 (ko) | 2009-09-23 | 2011-05-26 | 삼성전기주식회사 | 패키지 기판 |
| US20110076472A1 (en) | 2009-09-29 | 2011-03-31 | Jin Ho Kim | Package substrate |
| KR101084910B1 (ko) | 2009-10-12 | 2011-11-17 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
| KR20110039879A (ko) | 2009-10-12 | 2011-04-20 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
| JP5525793B2 (ja) * | 2009-10-19 | 2014-06-18 | パナソニック株式会社 | 半導体装置 |
| KR101095094B1 (ko) | 2009-10-26 | 2011-12-16 | 삼성전기주식회사 | 웨이퍼 레벨 패키지의 제조방법 |
| KR101095130B1 (ko) | 2009-12-01 | 2011-12-16 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
| US20110240927A1 (en) | 2009-12-23 | 2011-10-06 | Samsung Electro-Mechanics Co., Ltd. | Conductive polymer composition and conductive film formed using the same |
| US20110147668A1 (en) | 2009-12-23 | 2011-06-23 | Sang Hwa Kim | Conductive polymer composition and conductive film prepared using the same |
| KR101109214B1 (ko) | 2009-12-28 | 2012-01-30 | 삼성전기주식회사 | 패키지 기판 및 그 제조방법 |
| KR101119303B1 (ko) | 2010-01-06 | 2012-03-20 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
| KR101077408B1 (ko) | 2010-02-05 | 2011-10-26 | 서강대학교산학협력단 | Cmos 이미지 센서 |
| KR101067109B1 (ko) | 2010-04-26 | 2011-09-26 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
| KR20120026855A (ko) | 2010-09-10 | 2012-03-20 | 삼성전기주식회사 | 임베디드 볼 그리드 어레이 기판 및 그 제조 방법 |
| KR101289140B1 (ko) | 2010-09-28 | 2013-07-23 | 삼성전기주식회사 | 임베디드 인쇄회로기판 및 그 제조방법 |
| KR20120035673A (ko) | 2010-10-06 | 2012-04-16 | 삼성전기주식회사 | 패키지기판 |
| KR101095161B1 (ko) | 2010-10-07 | 2011-12-16 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 |
| KR20120050755A (ko) | 2010-11-11 | 2012-05-21 | 삼성전기주식회사 | 반도체 패키지 기판 및 그 제조방법 |
| KR101719822B1 (ko) | 2010-11-24 | 2017-03-27 | 삼성전기주식회사 | 솔더링 연결핀, 상기 솔더링 연결핀을 이용한 반도체 패키지 기판 및 반도체칩의 실장방법 |
| KR20120069443A (ko) | 2010-12-20 | 2012-06-28 | 삼성전기주식회사 | 패키지 기판용 리드핀과 상기 패키지 기판용 리드핀을 포함하는 반도체 패키지 인쇄회로기판 |
| KR101204233B1 (ko) | 2010-12-22 | 2012-11-26 | 삼성전기주식회사 | 전자부품 내장형 인쇄회로기판 및 그 제조방법 |
| KR101194469B1 (ko) | 2010-12-24 | 2012-10-24 | 삼성전기주식회사 | 패키지용 기판 및 그 제조방법 |
| KR101255912B1 (ko) | 2010-12-31 | 2013-04-17 | 삼성전기주식회사 | 멀티 칩 패키지 |
| US8162203B1 (en) * | 2011-02-18 | 2012-04-24 | International Business Machines Corporation | Spherical solder reflow method |
| JP2012216836A (ja) * | 2011-03-31 | 2012-11-08 | Mitsubishi Chemicals Corp | 三次元集積回路積層体 |
| WO2012133818A1 (ja) | 2011-03-31 | 2012-10-04 | 三菱化学株式会社 | 三次元集積回路積層体、及び三次元集積回路積層体用の層間充填材 |
| JP5837339B2 (ja) * | 2011-06-20 | 2015-12-24 | 新光電気工業株式会社 | 半導体装置の製造方法及び半導体装置 |
| KR101237668B1 (ko) | 2011-08-10 | 2013-02-26 | 삼성전기주식회사 | 반도체 패키지 기판 |
| WO2013095670A1 (en) | 2011-12-23 | 2013-06-27 | Intel Corporation | Hybrid low metal loading flux |
| KR20130082298A (ko) | 2012-01-11 | 2013-07-19 | 삼성전자주식회사 | 패키지 온 패키지 장치의 제조 방법 및 이에 의해 제조된 장치 |
| JP2013225638A (ja) | 2012-03-23 | 2013-10-31 | Toshiba Corp | 半導体装置 |
| US8704354B2 (en) * | 2012-03-28 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package structures and methods for forming the same |
| KR101867955B1 (ko) * | 2012-04-13 | 2018-06-15 | 삼성전자주식회사 | 패키지 온 패키지 장치 및 이의 제조 방법 |
| JP2014033084A (ja) * | 2012-08-03 | 2014-02-20 | Panasonic Corp | 積層パッケージ構造体の製造方法、組み立て装置、および製造システム |
| US9283641B2 (en) | 2012-09-25 | 2016-03-15 | Intel Corporation | Flux materials for heated solder placement and associated techniques and configurations |
| US8809181B2 (en) | 2012-11-07 | 2014-08-19 | Intel Corporation | Multi-solder techniques and configurations for integrated circuit package assembly |
| US9105626B2 (en) * | 2012-11-21 | 2015-08-11 | Qualcomm Incorporated | High-density package-on-package structure |
| US20140151096A1 (en) | 2012-12-04 | 2014-06-05 | Hongjin Jiang | Low temperature/high temperature solder hybrid solder interconnects |
| US9064971B2 (en) | 2012-12-20 | 2015-06-23 | Intel Corporation | Methods of forming ultra thin package structures including low temperature solder and structures formed therby |
| US20140175160A1 (en) | 2012-12-21 | 2014-06-26 | Rajen S. Sidhu | Solder paste material technology for elimination of high warpage surface mount assembly defects |
| US9394619B2 (en) | 2013-03-12 | 2016-07-19 | Intel Corporation | Methods of adding dopants to conductive interconnect structures in substrate technologies and structures formed thereby |
| US8896110B2 (en) | 2013-03-13 | 2014-11-25 | Intel Corporation | Paste thermal interface materials |
| US8987918B2 (en) * | 2013-03-14 | 2015-03-24 | Intel Corporation | Interconnect structures with polymer core |
| US8920934B2 (en) * | 2013-03-29 | 2014-12-30 | Intel Corporation | Hybrid solder and filled paste in microelectronic packaging |
| KR102067155B1 (ko) * | 2013-06-03 | 2020-01-16 | 삼성전자주식회사 | 연결단자를 갖는 반도체 장치 및 그의 제조방법 |
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| US9613933B2 (en) | 2017-04-04 |
| US10049971B2 (en) | 2018-08-14 |
| JP2017126806A (ja) | 2017-07-20 |
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