JP2015170854A - Tmi相互接続の歩留まりを高めるパッケージ構造 - Google Patents
Tmi相互接続の歩留まりを高めるパッケージ構造 Download PDFInfo
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- JP2015170854A JP2015170854A JP2015020306A JP2015020306A JP2015170854A JP 2015170854 A JP2015170854 A JP 2015170854A JP 2015020306 A JP2015020306 A JP 2015020306A JP 2015020306 A JP2015020306 A JP 2015020306A JP 2015170854 A JP2015170854 A JP 2015170854A
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- Prior art keywords
- solder ball
- substrate
- solder balls
- solder
- molding compound
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- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06582—Housing for the assembly, e.g. chip scale package [CSP]
- H01L2225/06586—Housing with external bump or bump-like connectors
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- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
- H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
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- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
- H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
- H01L2225/1047—Details of electrical connections between containers
- H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
- H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
- H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
-
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Abstract
Description
Claims (25)
- 基板と、
前記基板上に配置されたモールド化合物と、
前記モールド化合物内に埋め込まれるとともに前記基板上の複数の領域に電気的に結合された半導体ダイと、
前記基板上で前記半導体ダイの周りに配置された複数のはんだボールと、
前記モールド化合物に形成された複数のビアと
を備え、
前記複数のはんだボールのそれぞれは、当該はんだボールと他のはんだボールとの融合を促進する浄化剤を含むソリッドコーティングを表面に有し、
前記複数のビアのそれぞれは、前記複数のはんだボールと、前記複数のはんだボールのそれぞれの前記ソリッドコーティングとを露出させる装置。 - 前記ソリッドコーティングの前記浄化剤は、前記はんだボールが他のはんだボールと融合する温度未満の温度で、前記はんだボールと実質的に反応しない請求項1に記載の装置。
- 前記ソリッドコーティングは、溶媒をさらに含み、
前記浄化剤は、前記溶媒が気化する温度で前記はんだボールと実質的に反応しない請求項1または2に記載の装置。 - 前記ソリッドコーティングの前記浄化剤は、150℃の温度未満で前記はんだボールと実質的に反応しない請求項1から3の何れか1項に記載の装置。
- 前記複数のはんだボールと前記モールド化合物との間の複数のマイクロチャネルをさらに備える請求項1から4の何れか1項に記載の装置。
- 前記複数のはんだボールは、前記モールド化合物における複数の大型キャビティのそれぞれの中に存在し、
前記複数のマイクロチャネルは、前記複数のはんだボールと前記複数の大型キャビティとの間の複数のスペースのそれぞれに相当する請求項5に記載の装置。 - 前記浄化剤がロジンである請求項1から6の何れか1項に記載の装置。
- 前記ソリッドコーティングがアミン及び酸の一方または両方を含む請求項1から7の何れか1項に記載の装置。
- 前記ソリッドコーティングは、オーガニックポリマーネットワーク、粉末ベースのソリッドコーティング、活性接着フィルム、エラストマ及びワックスからなるグループから選択される請求項1から8の何れか1項に記載の装置。
- 前記モールド化合物の複数のアウターエッジは、前記半導体ダイに隣接する、前記モールド化合物の複数の領域よりも厚さが小さい請求項1から9の何れか1項に記載の装置。
- 基板と、
前記基板上に配置されたモールド化合物と、
前記モールド化合物内に埋め込まれるとともに前記基板上の複数の領域に電気的に結合された半導体ダイと、
前記モールド化合物内に埋め込まれた前記半導体ダイ上に配置されたパッケージ半導体ダイと、
前記基板上で、前記モールド化合物内に埋め込まれた前記半導体ダイの周りに配置された、複数の融合されたはんだボールペアと、
前記複数の融合されたはんだボールペアが存在する前記モールド化合物にそれぞれ形成された複数のビアと
を備え、
各はんだボールペアの第1はんだボールは前記パッケージ半導体ダイのパッケージの一部であり、各はんだボールペアの第2はんだボールは、前記基板上の領域に形成されており、
前記複数の融合されたはんだボールペアは、元々は前記第1はんだボールに適用されていた第1コーティングからの第1の材料を含むと共に、元々は前記第2はんだボールに適用されていた第2コーティングからの第2材料を含む装置。 - 前記複数の融合されたはんだボールペアの前記第2はんだボールと前記モールド化合物との間のマイクロチャネルをさらに備える請求項11に記載の装置。
- 前記複数の融合されたはんだボールペアの前記第2はんだボールは、前記モールド化合物における大型キャビティの中に存在し、
前記マイクロチャネルは、前記第2はんだボールと前記大型キャビティとの間のスペースのそれぞれに相当する請求項12に記載の装置。 - 前記第2材料は、元々は前記第2はんだボールに適用されていたロジンベースの融剤からのものである請求項11から13の何れか1項に記載の装置。
- 前記第2材料は、
元々は前記第2はんだボールに適用されていたオーガニックポリマーネットワーク、
元々は前記第2はんだボールに適用されていた粉末ベースのソリッドコーティング、
元々は前記第2はんだボールに適用されていた活性接着フィルム、
元々は前記第2はんだボールに適用されていたエラストマ、及び、
元々は前記第2はんだボールに適用されていたワックス
からなるグループから選択される請求項11から14の何れか1項に記載の装置。 - 前記モールド化合物の複数のアウターエッジは、前記半導体ダイに隣接する、前記モールド化合物の複数の領域よりも厚さが小さい請求項11から15の何れか1項に記載の装置。
- 基板と、
前記基板上に配置されたモールド化合物と、
前記モールド化合物内に埋め込まれるとともに前記基板上の複数の領域に電気的に結合された半導体ダイと、
前記基板上で前記半導体ダイの周りに配置された複数のはんだボールと、
前記モールド化合物に形成され、それぞれ前記複数のはんだボールを露出させる複数のビアと
を備え、
前記モールド化合物の複数のアウターエッジは、前記モールド化合物における、前記複数のビアと前記半導体ダイとの間の複数の領域よりも厚さが小さい装置。 - 前記装置は、パッケージ‐オン‐パッケージ構造の一部である請求項17に記載の装置。
- 基板と、
前記基板上に配置されたモールド化合物と、
前記モールド化合物内に埋め込まれるとともに前記基板上の複数の領域に電気的に結合された半導体ダイと、
前記基板上で前記半導体ダイの周りに配置された複数のはんだボールと、
前記モールド化合物に形成された複数のビアと
を備え、
前記複数のビアのそれぞれは、前記複数のはんだボールと、前記複数のはんだボールのそれぞれのソリッドコーティングとを露出させ、
複数のマイクロチャネルが前記複数のはんだボールと前記モールド化合物との間に存在する装置。 - 前記装置は、パッケージ‐オン‐パッケージ構造の一部である請求項19に記載の装置。
- ダイ、下部はんだボール及びマルチレイヤー基板の上にモールド化合物を形成する段階であって、前記ダイは前記マルチレイヤー基板に結合され、かつ、前記下部はんだボールは前記マルチレイヤー基板に結合されている段階と、
前記はんだボール上で前記モールド化合物にビアを形成して前記はんだボールを露出させる段階と、
前記はんだボールの濡れを促進するソリッドコーティングを前記はんだボールの表面に形成する段階と
を含む方法。 - ダイ、下部はんだボール及びマルチレイヤー基板の上にモールド化合物を形成する段階であって、前記ダイは前記マルチレイヤー基板に結合され、前記下部はんだボールは前記マルチレイヤー基板に結合されている段階と、
昇温された温度を適用して前記はんだボールを固相から液相に変化させると共に、前記はんだボールを膨張させることで、前記モールド化合物が前記はんだボールに対して界面をなす位置で、前記モールド化合物に外向きの圧力を働かせる段階と、
降温された温度を適用して前記はんだボールを縮ませることで、前記はんだボールと前記モールド化合物の間の、前記昇温された温度で前記モールド化合物が前記はんだボールに対して界面をなした位置でマイクロチャネルを残す段階と、
前記はんだボール上で前記モールド化合物にビアを形成して前記はんだボールを露出させる段階と
を含む方法。 - ダイ、下部はんだボール及びマルチレイヤー基板の上にモールド化合物を形成する段階であって、前記ダイは前記マルチレイヤー基板に結合され、前記下部はんだボールは前記マルチレイヤー基板に結合されている段階と、
前記マルチレイヤー基板の周囲で前記モールド化合物の厚さを低減させて、前記周囲での周囲温度が前記はんだボールに到達することを可能にする段階と
を含む方法。 - 前記厚さは、前記周囲の少なくとも1つのコーナー部で低減される請求項23に記載の方法。
- 前記厚さは、前記周囲の少なくとも1つのエッジに沿って低減される請求項23に記載の方法。
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US9613933B2 (en) | 2017-04-04 |
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