TWI459505B - 電互連結構及方法 - Google Patents

電互連結構及方法 Download PDF

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Publication number
TWI459505B
TWI459505B TW097112303A TW97112303A TWI459505B TW I459505 B TWI459505 B TW I459505B TW 097112303 A TW097112303 A TW 097112303A TW 97112303 A TW97112303 A TW 97112303A TW I459505 B TWI459505 B TW I459505B
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Taiwan
Prior art keywords
solder
metal core
conductive pad
core structure
substrate
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TW097112303A
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English (en)
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TW200849470A (en
Inventor
Stephen Leslie Buchwalter
Bruce K Furman
Peter A Gruber
Jae-Woong Nah
Da-Yuan Shih
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Ultratech Inc
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Publication of TW200849470A publication Critical patent/TW200849470A/zh
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Publication of TWI459505B publication Critical patent/TWI459505B/zh

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Description

電互連結構及方法
本發明實施例係關於電互連結構與形成電互連結構之相關方法。
結構間的連接通常不可靠且易於失效。因此，於此技術領域中需要克服上述的缺點與限制。
本發明提供一種電結構，包含：一第一基板，包含一第一導電墊；一第二基板，包含一第二導電墊；以及一互連結構，電性與機械性地連接第一導電墊至第二導電墊，其中互連結構包含一非焊料金屬核心結構、直接與非焊料金屬核心結構之一第一部分機械接觸之一第一焊料結構、以及直接與非焊料金屬核心結構之一第二部分機械接觸之一第二焊料結構，其中第一焊料結構電性與機械性地連接非焊料金屬核心結構之第一部分至第一導電墊，且其中第二焊料結構電性與機械性地連接非焊料金屬核心結構之第二部分至第二導電墊。
本發明提供一種電結構，包含： 一第一基板，包含一第一導電墊；一第二基板，包含一第二導電墊；以及一互連結構，電性與機械性地連接第一導電墊至第二導電墊，其中互連結構包含一非焊料金屬核心結構以及一焊料層，焊料層覆蓋非焊料金屬核心結構之一整個外表面，其中該整個外表面完全地包圍非焊料金屬核心結構，其中焊料層直接電性與機械性地接觸非焊料金屬核心結構之整個表面，且其中焊料層直接電性與機械性地連接非焊料金屬核心結構至第一導電墊與第二導電墊。
本發明提供一種形成一電結構之方法，包含：提供包含一第一導電墊之一第一基板、包含一第二導電墊之一第二基板、以及包含一非焊料金屬核心結構之一轉移膜，其中非焊料金屬核心結構包含一圓柱形狀；形成一第一焊料結構於第一導電墊上；在形成第一焊料結構後，第一次定位轉移膜，使得非焊料金屬核心結構之第一側與第一焊料結構接觸；在第一次定位後，第一次加熱非焊料金屬核心結構至一溫度，係足以使得第一焊料結構熔化且於非焊料金屬核心結構之第一側與第一導電墊間形成電性與機械性連接； 在第一次加熱後，自非焊料金屬核心結構移除轉移膜；形成一第二焊料結構於第二導電墊上；在形成第二焊料結構後，第二次定位包含非焊料金屬核心結構之第一基板，使得非焊料金屬核心結構之第二側與第二焊料結構接觸；以及在第二次定位後，第二次加熱非焊料金屬核心結構至一溫度，係足以使得第二焊料結構熔化且於非焊料金屬核心結構之第二側與第二導電墊間形成電性與機械性連接，導致第一導電墊與第二導電墊間之電性與機械性連接。
本發明提供一種形成一電結構之方法，包含：提供包含一第一導電墊之一第一基板、包含一第二導電墊之一第二基板、包含一第一腔穴(cavity)之一第一轉移基板、以及包含一球狀之一非焊料金屬核心結構，其中非焊料金屬核心結構包含一直徑小於第一腔穴之直徑；形成一第一焊料結構於第一導電墊上；分配非焊料金屬核心結構入第一轉移基板之第一腔穴；在分配後，第一次定位第一轉移基板，使得非焊料金屬核心結構之表面之第一區與第一焊料結構接觸； 在第一次定位後，第一次加熱非焊料金屬核心結構至一溫度，係足以使得第一焊料結構熔化且於非焊料金屬核心結構之表面之第一區與第一導電墊間形成電性與機械性連接；在第一次加熱後，自非焊料金屬核心結構移除第一轉移基板；形成一第二焊料結構於第二導電墊上；第二次定位包含非焊料金屬核心結構之第一基板，使得非焊料金屬核心結構之表面之第二區與第二焊料結構接觸；以及在第二次定位後，第二次加熱非焊料金屬核心結構至一溫度，係足以使得第二焊料結構熔化且於非焊料金屬核心結構之表面之第二區與第二導電墊間形成電性與機械性連接，導致第一導電墊與第二導電墊間之電性與機械性連接。
本發明提供一種形成一電結構之方法，包含：提供包含一第一導電墊之一第一基板、包含一第二導電墊之一第二基板、包含一第一腔穴之一第一轉移基板、包含一球狀之一第一非焊料金屬核心結構、以及包含一球狀之一第二非焊料金屬核心結構，其中第一非焊料金屬核心結構包含一直徑小於第一腔穴之直徑，且其中第二非焊料金屬核心結構包含一直徑小於第一腔穴之直徑； 形成一第一焊料結構於第一導電墊上；第一次分配第一非焊料金屬核心結構入第一轉移基板之第一腔穴；在分配後，第一次定位第一轉移基板，使得第一非焊料金屬核心結構之表面之第一區與第一焊料結構接觸；在第一次定位後，第一次加熱第一非焊料金屬核心結構至一溫度，係足以使得第一焊料結構熔化且於第一非焊料金屬核心結構之表面之第一區與第一導電墊間形成電性與機械性連接；在第一次加熱後，自非焊料金屬核心結構移除第一轉移基板；施加一第一下填囊封層於第一基板；形成一第二焊料結構於第一非焊料金屬核心結構之表面之第二區上；第二次分配第二非焊料金屬核心結構入第一轉移基板之第一腔穴；在第二次分配後，第二次定位第一轉移基板，使得第二非焊料金屬核心結構之表面之第一區與第二焊料結構接觸；在第二次定位後，第二次加熱第二非焊料金屬核心結構至一溫度，係足以使得第二焊料結構熔化且於第一非焊料金屬核心結構之表面之第二區與第二非焊料金屬核心結構之表面之第一區間形成電性與機械性 連接；在第二次加熱後，自第二非焊料金屬核心結構移除第一轉移基板；形成一第三焊料結構於第二導電墊上；第三次定位包含第一非焊料金屬核心結構與第二非焊料金屬核心結構之第一基板，使得第二非焊料金屬核心結構之表面之第二區與第三焊料結構接觸；在第三次定位後，第三次加熱第二非焊料金屬核心結構至一溫度，係足以使得第三焊料結構熔化且於第二非焊料金屬核心結構之表面之第二區與第二導電墊間形成電性與機械性連接，導致第一導電墊與第二導電墊間之電性與機械性連接。
本發明提供一種形成一電結構之方法，包含：提供包含一第一導電墊與一第二導電墊之一第一基板、包含一第三導電墊與一第四導電墊之一第二基板、包含一第一腔穴與一第二腔穴之一第一轉移基板、以及包含一球狀之一非焊料金屬核心結構，其中非焊料金屬核心結構包含一直徑小於第一腔穴之直徑；形成一第一焊料結構於第一導電墊上；形成一第二焊料結構於第二導電墊上；以具有對應第一腔穴之開口的膜覆蓋第二腔穴；分配非焊料金屬核心結構入第一轉移基板之第一 腔穴；第一次定位第一轉移基板，使得非焊料金屬核心結構之表面之第一區與第一焊料結構接觸，且第二腔穴對準第二焊料結構；第一次加熱非焊料金屬核心結構至一溫度，係足以使得第一焊料結構熔化且於非焊料金屬核心結構之表面之第一區與第一導電墊間形成電性與機械性連接；自非焊料金屬核心結構移除第一轉移基板；形成一第三焊料結構於第三導電墊上；形成一第四焊料結構於第四導電墊上；第二次定位包含非焊料金屬核心結構之第一基板，使得非焊料金屬核心結構之表面之第二區與第三焊料結構接觸，且第二焊料結構與第四焊料結構接觸；第二次加熱非焊料金屬核心結構至一溫度，係足以使得第三焊料結構熔化且於非焊料金屬核心結構之表面之第二區與第三導電墊間形成電性與機械性連接，導致第一導電墊與第三導電墊間之電性與機械性連接；第三次加熱第二焊料結構與第四焊料結構至一溫度，係足以使得第二焊料結構與第四焊料結構熔化，且於第二焊料結構與第四焊料結構間形成電性與機械性連接，導致第二導電墊與第四導電墊間之電性與機械性連接，其中第二次加熱與第三次加熱同時執行。
本發明優勢地提供簡易結構以及於結構間形成連接之相關方法。
圖1顯示本發明實施例之電結構2a之截面圖。電結構2a包含基板1、基板4、以及複數個互連結構5a。基板1包含複數個導電墊10。每個導電墊10可連接至基板1中之線路或電元件。基板4包含複數個導電墊12。每個導電墊12可連接至基板4中之線路或電元件。基板1可包含尤其是半導體裝置(例如積體電路晶片、半導體晶圓等)、晶片載體(有機或無機)、印刷電路板等。基板4可包含尤其是半導體裝置(例如積體電路晶片、半導體晶圓等)、晶片載體(有機或無機)、印刷電路板等。每個互連結構5a包含非焊料金屬(即不包含任何焊料材料)核心結構14以及焊料結構6a。焊料結構6a包含焊料。焊料於此定義為包含低熔點之金屬合金(即約攝氏100度至約攝氏340度)，其係用以接合金屬表面而不熔化金屬表面。焊料結構6a包含焊料層6，其係完全地包圍非焊料金屬核心結構14。選替地(即替代焊料層完全地包圍非焊料金屬核心結構14)，焊料結構6a包含附接至非焊料金屬核心結構14之上側14a的第一部份焊料9a、以及附接至非焊料金屬核心結構14之下側14b的第二部份焊料9b。每 個非焊料金屬核心結構14可包含任何不包含焊料之導電金屬材料，尤其是例如銅、金、鎳等。每個互連結構5a電性與機械性地連接導電墊10至導電墊12。非焊料金屬核心結構14包含圓柱形狀。焊料結構6a可包含任何適於覆晶互連之焊料材料，尤其是錫之合金，例如SnCu、SnAgCu、SnPb等。
圖2顯示根據本發明實施例圖1之第一選替電結構2b之截面圖。電結構2b包含基板1、基板4、以及複數個互連結構5b。相對於圖1之電結構2a，圖2之電結構2b包含複數個互連結構5b。每個互連結構5b包含球狀非焊料(即不包含任何焊料材料)金屬核心結構17以及焊料結構6b。焊料結構6b包含焊料層，其係完全地包圍相關之非焊料金屬核心結構17。選替地，每個互連結構5b可包含額外焊料結構6d。每個焊料結構6b電性與機械性地連接相關之非焊料金屬核心結構17(即透過焊料結構6d)至相關之導電墊12。前述的連接導致每個互連結構5b電性與機械性地連接導電墊10至相關之導電墊12。選擇性地，兩種不同類型之焊料材料可用為焊料結構6b與焊料結構6d。舉例而言，焊料結構6b可包含AuSn焊料材料，而焊料結構6d可包含尤其是選自SnAg、SnCu、SnAgCu、SnBi等之焊料材料。就第一層區域陣列互連而言，每個非焊料金屬核心結構17可包含約25微 米至約150微米之直徑。就第二層區域陣列互連(例如球柵陣列(BGA))而言，每個非焊料金屬核心結構17可包含約0.2毫米(mm)至約1.5毫米之直徑。每個非焊料金屬核心結構17可包含任何不包含焊料之導電金屬材料，尤其是例如銅、金、鎳等。選替地，每個非焊料金屬核心結構17可包含額外的非焊料金屬材料層(即與非焊料金屬核心結構17所包含之材料不同)，係包圍(例如見以下圖3之層19)非焊料金屬核心結構17。此額外層可包含任何導電金屬材料，尤其是例如鎳、金、錫等。
圖3顯示根據本發明實施例圖2之第一選替電結構2c之截面圖。電結構2c包含基板1、基板4、以及複數個互連結構5c。相對於圖2之電結構2b，圖3之電結構2c包含複數個互連結構5c。每個互連結構5c包含非焊料金屬核心結構17、焊料結構6c以及焊料結構6d。每個焊料結構6c電性與機械性地連接相關之非焊料金屬核心結構17至相關之導電墊10。每個焊料結構6d電性與機械性地連接相關之非焊料金屬核心結構17至相關之導電墊12。前述的連接導致每個互連結構5c電性與機械性地連接導電墊10至相關之導電墊12。選擇性地，兩種不同類型之焊料材料可用為焊料結構6c與焊料結構6d。舉例而言，焊料結構6c可包含AuSn焊料材料，而焊料結構6d可包含 尤其是選自例如SnAg、SnCu、SnAgCu、SnBi等之焊料材料。每個非焊料金屬核心結構17可包含任何不包含焊料之導電金屬材料核心，尤其是例如銅、金、鎳等。選替地，每個非焊料金屬核心結構17可包含額外的非焊料金屬材料層19(即與非焊料金屬核心結構17所包含之材料不同)，係包圍非焊料金屬核心結構17。此額外層19可包含任何導電金屬材料，尤其是例如鎳、金、錫等。
圖4顯示根據本發明實施例圖3之第一選替電結構2d之截面圖。電結構2d包含基板1、基板4、以及複數個互連結構5d。相對於圖3之電結構2c，圖3之電結構2d包含複數個互連結構5d。每個互連結構5d包含非焊料金屬核心結構17a、非焊料金屬核心結構17b、焊料結構6c、焊料結構6d以及焊料結構6e。選替地(即選擇性地)，電結構2d包含下填囊封層25a與下填囊封層25b。每個焊料結構6e電性與機械性地連接非焊料金屬核心結構17a至相關之非焊料金屬核心結構17b。每個焊料結構6c電性與機械性地連接相關之非焊料金屬核心結構17a至相關之導電墊10。每個焊料結構6d電性與機械性地連接相關之非焊料金屬核心結構17b至相關之導電墊12。前述的連接導致每個互連結構5d電性與機械性地連接導電墊10至相關之導電墊12。選擇性地，三種不同類型之焊料材料可 用為焊料結構6c、焊料結構6d與焊料結構6e。舉例而言，焊料結構6c可包含AuSn焊料材料，焊料結構6d可包含尤其是例如SnAg、SnCu等之焊料材料，而焊料結構6e可包含尤其是例如SnAgCu、SnBi等之焊料材料。每個非焊料金屬核心結構17a與17b可包含任何不包含焊料之導電金屬材料核心，尤其是例如銅、金、鎳等。選替地，非焊料金屬核心結構17a可包含第一材料(例如銅)，而非焊料金屬核心結構17b可包含第二材料(例如金)。選替地，每個非焊料金屬核心結構17a與17b可包含額外的非焊料金屬材料層19(即與非焊料金屬核心結構17a與17b所包含之材料不同)，係包圍非焊料金屬核心結構17a與17b。額外層19可包含任何導電金屬材料，尤其是例如鎳、金、錫等。選替地，非焊料金屬核心結構17a之層19可包含與非焊料金屬核心結構17b之層19不同之材料。下填囊封層25a包圍非焊料金屬核心結構17a，且與基板1接觸。而下填囊封層25b包圍非焊料金屬核心結構17b，且與基板4接觸。下填囊封層25a與下填囊封層25b接觸。下填囊封層25a可包含第一材料(例如高填塞矽土複合物黏著劑)，下填囊封層25b可包含不同的第二材料(例如微填塞矽土複合物黏著劑)。下填囊封層25a可包含第一熱膨脹係數(例如範圍約為5－15ppm/C)，係不同(較低)於下填囊封層25b之第二熱膨脹係數(例如範圍約為15.1－40ppm/C)。下填囊封層 25a可包含額外散佈遍及之填充物(filler)25c。
圖5顯示根據本發明實施例之電結構2e之截面圖。電結構2e為圖2－3之電結構2b與2c之組合。除圖2－3之電結構2b與2c外，圖5之電結構2e包含互連結構29(即包含焊料)電性與機械性地連接某些導電墊10至相關之導電墊12。因此，電結構2e利用互連結構5b、5c、與29之組合電性與機械性地連接導電墊10至導電墊12。需注意，任何互連結構5b、5c、與29之組合與組態可用以電性與機械性地連接導電墊10至相關之導電墊12。舉例而言，電結構2e可僅包含互連結構5c與29，以電性與機械性地連接導電墊10至導電墊12。互連結構5b、5c、與29可有任何數目與比例配置成任何圖案(例如互連結構5b與29可以相交替的方式配置、可以隨機方式配置、可以每三個互連結構29就有一個互連結構5b之方式配置、可配置成僅互連結構5b提供電力與接地的連接，而僅互連結構29為訊號的連接等)。選替地，墊結構2e可包含下填囊封層31於基板1與基板4之間。
圖6顯示根據本發明實施例圖2之第二選替電結構2f之截面圖。相對於圖2之電結構2b，圖6之電結構2f包含下填囊封層32a於基板1與基板4之間。於基板1為半導體裝置或矽晶圓之案例中，下填囊封層 32a可選替地包含下填層，係於晶片接合前施加，或施加於晶圓上覆蓋互連結構5b。此類下填層定義為晶圓級下填層。
圖7顯示根據本發明實施例圖1之第二選替電結構2g之截面圖。相對於圖1之電結構2a，圖7之電結構2g包含下填囊封層32b於基板1與基板4之間。於基板1為半導體裝置或矽晶圓之案例中，下填囊封層32b可選替地包含下填層，係於晶片接合前施加，或施加於晶圓上覆蓋互連結構5a。此類下填層定義為晶圓級下填層。
圖8顯示根據本發明實施例圖3之第二選替電結構2h之截面圖。相對於圖3之電結構2c，圖8之電結構2h包含下填囊封層32c於基板1與基板4之間。於基板1為半導體裝置或矽晶圓之案例中，下填囊封層32c可選替地包含下填層，係於晶片接合前施加，或施加於晶圓上覆蓋互連結構5c。此類下填層定義為晶圓級下填層。
圖9A－9G為根據本發明實施例產生圖1之電結構2a之程序。
圖9A顯示根據本發明實施例之圖1之非焊料金 屬核心層37形成於絕緣層35上之截面圖。非焊料金屬核心層37可包含任何非焊料金屬材料，尤其是例如銅、金、鎳等。絕緣層35可包含任何絕緣材料，尤其是例如聚合物膜(例如聚醯亞胺(polyimide))等。
圖9B顯示根據本發明實施例在圖9A之結構形成非焊料金屬互連結構14後而形成互連結構35a之截面圖。非焊料金屬互連結構14的形成可藉由消減式蝕刻部份例如圖1之非焊料金屬核心層37，而形成非焊料金屬互連結構14。消減式蝕刻製程包含：
1.施加與圖案化保護性光阻層
2.利用化學溶液蝕刻或分解未受保護之銅區域
3.剝除保護性光阻層
每個非焊料金屬互連結構14可包含約10微米至約100微米之寬度、約1：1至約5：1之高－寬外觀比。
圖9C顯示根據本發明實施例於圖9B之基板1形成第一部份焊料9a(即焊料結構)後而形成結構35b之截面圖。舉例而言，基板1可包含備有導電互連墊(例如見圖10之墊10)之矽裝置晶圓。焊料施加於這些墊上，以形成第一部份焊料9a。任何方法可用以施加焊料至導電互連墊，尤其是例如施加焊料為射出成型模焊料。
圖9D顯示根據本發明實施例在圖9B之結構35a對準圖9C之結構35b後之截面圖。非焊料金屬互連結構14對準於相關之第一部分焊料9a。對準程序可包含利用商用可得之接合工具，其係利用光學成應基板1上與絕緣層35上之基準(fiducials)。
圖9E顯示根據本發明實施例在圖9D之對準程序後而形成結構35c之截面圖。於圖9E中，藉由加熱圖9D之對準組件至一溫度而執行轉移程序，該溫度高於用以形成第一部分焊料9a之焊料的熔點(即具有助熔劑(fluxin agent)或助熔氛圍的輔助)。選擇性地，轉移程序可透過施加雷射釋放程序於絕緣層35之背側而獲得幫助。於介面23被絕緣層35吸收至非焊料金屬互連結構14之雷射產生的微能量，導致黏著(即於介面23)被降級，因而自絕緣層35釋放非焊料金屬互連結構14。選替地，黏著劑(即於介面23)可於前述焊料熔螎程序被降級並釋放非焊料金屬互連結構14。
圖9F顯示根據本發明實施例在圖9E之結構35c與結構35d對準程序之截面圖。結構35d包含形成有焊料結構9b之基板4(即由類似於圖9C相關製程之製程所形成)。
圖9G顯示根據本發明實施例完成的電結構35e，其類似於圖1之電結構2a。實施透過非焊料金屬互連結構14、焊料結構9a、以及焊料結構9b之基板1與基板4之組合，係藉由升高非焊料金屬互連結構14之溫度至高於焊料結構9b之熔點溫度並有助熔劑或於助熔氛圍的輔助。選擇性地，非焊料金屬互連結構14、焊料結構9a、以及焊料結構9b可以聚合材料囊封，係藉由毛細下填然後接合基板1與基板4。選替地，下填囊封劑可在接合基板1與基板4之前於晶圓級施加或施加於單一化之裝置上。
圖10A－10I為根據本發明實施例產生圖2之電結構2b、圖3之電結構2c、以及圖5之電結構2e之程序。需注意雖然圖10A－10I顯示施加焊料程序為射出成型焊料，但可利用任何焊料施加程序。
圖10A顯示根據本發明實施例之結構39a之截面圖，結構39a包含定位於基板1(即來自圖2與圖3)上之填塞玻璃或矽模40。玻璃或矽模40填塞有焊料，當自玻璃模釋放後焊料會變成圖2之焊料結構6b、圖3之焊料結構6c、以及圖5之焊料結構6b。焊料可包含任何適於覆晶互連之焊料，尤其是錫之合金，例如SnCu、SnAgCu、SnPb等。焊料可包含高熔點使得在後續步驟中焊料結構6b與6c不會熔化。
圖10B顯示根據本發明實施例在圖10A之結構39a形成之結構39b之截面圖。於圖10B中，已自玻璃或矽模40釋放焊料而形成附接於基板1之導電墊10的焊料結構6c。
圖10C顯示根據本發明實施例包含複數個非焊料金屬核心結構17之轉移基板43之截面圖。非焊料金屬核心結構17位於轉移基板43中之腔穴43a。每個腔穴43a包含類似於非焊料金屬核心結構17之尺寸，且腔穴位置對應於導電墊10上之相關焊料結構6c的位置。轉移基板43可包含尤其是玻璃、矽、或任何用以作為射出成型模之材料等。非焊料金屬核心結構17可以溶劑(例如水、酒精(如異丙醇)等)中之漿料方式分配至腔穴43a中。溶劑可包含適量的助熔劑，以協助焊料結構6c至非焊料金屬核心結構17之濕化。於非焊料金屬核心結構17塗佈有金之案例，助熔劑為非必要。選擇性地，溶劑可額外包含小量的熱分解聚合黏著劑，以幫助維持非焊料金屬核心結構17於腔穴43a中。腔穴43a之尺寸係製造成於分配非焊料金屬核心結構17時，將僅有一個非焊料金屬核心結構17掉入腔穴43a中。
圖10D顯示根據本發明實施例圖10C之轉移基板 43包含所選的非焊料金屬核心結構17之截面圖。作為製程之選擇性特徵，轉移基板43可覆蓋有聚合物膜(未顯示)，聚合物膜具有匹配某些預定比例腔穴43a之通孔。受聚合物膜覆蓋之預定比例腔穴43a將免於接收到非焊料金屬核心結構17。預定比例腔穴43a允許封裝設計工程師選擇性的放置非焊料金屬核心結構17。此外，焊料互連29可選擇性地置於某些腔穴43a中(即取代所選的非焊料金屬核心結構17)以置於基板1上。於此選擇中，轉移基板43可覆蓋有第二聚合物膜(未顯示)，聚合物膜具有匹配剩餘腔穴43a之通孔。受聚合物膜覆蓋之腔穴43a將免於接收到焊料互連29。
圖10E顯示根據本發明實施例在圖10B之基板1於包含非焊料金屬核心結構17之轉移基板43上之截面圖。圖10B之基板1定位於包含非焊料金屬核心結構17之轉移基板43上，以轉移非焊料金屬核心結構17至基板1。
圖10F顯示根據本發明實施例非焊料金屬核心結構17自轉移基板43釋放且連接到焊料結構6b後之基板1之截面圖。於圖10F中，焊料結構6b完全地包圍非焊料金屬核心結構17。
圖10G顯示根據本發明實施例圖10F之選替結構39c之截面圖，結構39c包含在非焊料金屬核心結構17自轉移基板43釋放且連接到焊料結構6c後之基板1。於圖10G中，焊料結構6c部份地包圍非焊料金屬核心結構17。
圖10H顯示根據本發明實施例將基板1定位於基板4上之截面圖。基板1連接至基板4以形成圖2之電結構2b。
圖10I顯示根據本發明實施例將基板1定位於基板4上之選替截面圖。於此案例中選用圖10D(即包含焊料互連結構29)，對準程序(未顯示)與圖10H類似。基板1連接至基板4以形成圖3之電結構2c。
圖11A－11F為根據本發明實施例產生圖4之電結構2d之程序。
圖11A顯示根據本發明實施例包含下填層25a之圖10G之結構39c之截面圖。圖11A之結構39c已藉由參考圖10A－10E之製程步驟所形成。下填層25a可包含填充物25c以產生低熱膨脹係數(CTE)。下填層25a可包含類似於基板1之熱膨脹係數(CTE)。
圖11B顯示根據本發明實施例之結構39c之截面圖，結構39c包含定位於非焊料金屬核心結構17a之玻璃或矽模40b。玻璃或矽模40填塞有焊料，當自玻璃模釋40b放後焊料會變成圖4之焊料結構6e。焊料可包含任何適於覆晶互連之焊料，尤其是錫之合金，例如AuSn、SnCu、SnAgCu等。焊料可包含高熔點使得在後續步驟中焊料結構6e不會熔化。
圖11C顯示根據本發明實施例包含焊料結構6e之結構39c附接至非焊料金屬核心結構17之截面圖。於圖11C中，已自玻璃或矽模40b釋放焊料而形成附接於非焊料金屬核心結構17之焊料結構6e。
圖11D顯示根據本發明實施例將圖11C之結構39c定位於包含複數個非焊料金屬核心結構17b之轉移基板43上之截面圖。圖11C之結構39c定位於包含複數個非焊料金屬核心結構17b之轉移基板43上，以轉移並連接非焊料金屬核心結構17b至非焊料金屬核心結構17a。
圖11E顯示根據本發明實施例非焊料金屬核心結構17b連接到非焊料金屬核心結構17a後之圖11D之結構39c之截面圖。
圖11F顯示根據本發明實施例包含施加於下填層25a上之下填層25b之圖11之結構39c之截面圖。在下填層25b施加於下填層25a上後，基板1連接至基板4以形成圖4之電結構2d。
以上較佳具體實施例之詳述係用以更加清楚地描述本發明之特徵與精神，而非用以限制本發明作之範疇。本發明之申請專利範圍的範疇應該根據上述的說明作最寬廣的解釋，涵蓋所有可能均等的改變以及具均等性的安排。
1、4‧‧‧基板
2a、2b、2c、2d、2e、2f、2g、2h‧‧‧電結構
5a、5b、5c、5d、29‧‧‧互連結構
6‧‧‧焊料層
6a、6c、6d、6e‧‧‧焊料結構
9a‧‧‧第一部份焊料
9b‧‧‧第二部份焊料
10、12‧‧‧導電墊
14‧‧‧非焊料金屬核心結構
14a‧‧‧上側
14b‧‧‧下側
17、17a、17b‧‧‧非焊料金屬核心結構
19‧‧‧額外的非焊料金屬材料層
23‧‧‧介面
25a‧‧‧下填囊封層
25b‧‧‧下填層
25c‧‧‧填充物
31、32a、32b、32c‧‧‧下填囊封層
35‧‧‧絕緣層
37‧‧‧非焊料金屬核心層
35a、35b、35c、35d‧‧‧結構
35e‧‧‧電結構
39a、39b、39c‧‧‧結構
40、40b‧‧‧玻璃或矽模
43‧‧‧轉移基板
43a‧‧‧腔穴
圖1為根據本發明實施例之第一電結構之截面圖。
圖2為根據本發明實施例圖1之第一選替第二電結構之截面圖。
圖3為根據本發明實施例圖2之第一選替第三電結構之截面圖。
圖4為根據本發明實施例圖3之第一選替第四電結構之截面圖。
圖5為根據本發明實施例之第五電結構之截面圖。
圖6為根據本發明實施例圖2之第二選替第六電結構之截面圖。
圖7為根據本發明實施例圖1之第二選替第七電結構之截面圖。
圖8為根據本發明實施例圖3之第二選替第八電結構之截面圖。
圖9A－9G為根據本發明實施例產生圖1之電結構之程序。
圖10A－10I為根據本發明實施例產生圖2、圖3、及圖5之電結構之程序。
圖11A－11F為根據本發明實施例產生圖4之電結構之程序。
1、4‧‧‧基板
2a‧‧‧電結構
5a‧‧‧互連結構
6‧‧‧焊料層
6a‧‧‧焊料結構
9a‧‧‧第一部份焊料
9b‧‧‧第二部份焊料
10、12‧‧‧導電墊
14‧‧‧非焊料金屬核心結構
14a‧‧‧上側
14b‧‧‧下側

Claims (40)

  1. 一種電互連結構，包含：一第一基板，包含一第一導電墊；一第二基板，包含一第二導電墊；以及一互連結構，電性與機械性地連接該第一導電墊至該第二導電墊，其中該互連結構包含一非焊料金屬核心結構、直接與該非焊料金屬核心結構之一第一部分機械接觸之一第一焊料結構、以及直接與該非焊料金屬核心結構之一第二部分機械接觸之一第二焊料結構，其中該第一焊料結構電性與機械性地連接該非焊料金屬核心結構之該第一部分至該第一導電墊，且其中該第二焊料結構電性與機械性地連接該非焊料金屬核心結構之該第二部分至該第二導電墊。
  2. 如請求項1所述之電互連結構，其中該非焊料金屬核心結構包含一圓柱形狀。
  3. 如請求項1所述之電互連結構，其中該非焊料金屬核心結構包含一球狀。
  4. 如請求項1所述之電互連結構，其中該非焊料金屬核心結構包含一金屬材料係選自銅、鎳、及金所組成之族群。
  5. 如請求項1所述之電互連結構，其中該非焊料金屬核心結構包含一第一金屬結構以及一第二金屬結構，該第二金屬結構覆蓋且直接機械接觸該第一金屬結構之一整個外表面，其中該第一金屬結構包含一第一金屬材料，且其中該第二金屬結構包含與該第一金屬材料不同之一第二金屬材料。
  6. 如請求項1所述之電互連結構，其中該互連結構包含一第三焊料結構，其中該非焊料金屬核心結構包含具有一球狀之一第一非焊料金屬核心以及包含該球狀之一第二非焊料金屬核心，其中該第三焊料結構電性與機械性地將該第一非焊料金屬核心附接到該第二非焊料金屬核心，且其中該非焊料金屬核心結構之該第一部分位於該第一非焊料金屬核心上，且其中該非焊料金屬核心結構之該第二部分位於該第二非焊料金屬核心上。
  7. 如請求項6所述之電互連結構，其中該第一焊料結構包含一第一焊料材料，其中該第二焊料結構包含一第二焊料材料，且其中該第一焊料材料不同於該第二焊料材料。
  8. 如請求項7所述之電互連結構，其中該第三焊料結構包含一第三焊料材料，且其中該第三焊料材料不同於該第一焊料材料與該第二焊料材料。
  9. 如請求項6所述之電互連結構，更包含：一第一下填囊封層，包圍該第一非焊料金屬核心且與該第一基板接觸；以及一第二下填囊封層，包圍該第二非焊料金屬核心且與該第二基板接觸，其中該第一下填囊封層包含一第一熱膨脹係數，其中該第二下填囊封層包含一第二熱膨脹係數，且其中該第一熱膨脹係數不同於該第二熱膨脹係數。
  10. 如請求項9所述之電互連結構，其中該第一基板為一半導體裝置，其中該第二基板為一晶片載體，且其中該第一熱膨脹係數小於該第二熱膨脹係數。
  11. 如請求項1所述之電互連結構，更包含：一焊料互連結構，係包含一焊料，其中該第一基板包含一第三導電墊，其中該第二基板包含一第四導電墊，且其中該焊料互連結構電性與機械性地連接該第三導電墊至該第四導電墊。
  12. 如請求項1所述之電互連結構，更包含：一第一晶圓級下填囊封層，包圍該第一非焊料金屬核心且填塞該第一基板與該第二基板間之一空間。
  13. 一種電互連結構，包含： 一第一基板，包含一第一導電墊；一第二基板，包含一第二導電墊；以及一互連結構，電性與機械性地連接該第一導電墊至該第二導電墊，其中該互連結構包含一非焊料金屬核心結構以及一焊料層，該焊料層覆蓋該非焊料金屬核心結構之一整個外表面，其中該整個外表面完全地包圍該第一金屬結構，其中該焊料層直接電性與機械性地接觸該非焊料金屬核心結構之該整個表面，且其中該焊料層直接電性與機械性地連接該非焊料金屬核心結構至該第一導電墊與該第二導電墊。
  14. 如請求項13所述之電互連結構，其中該非焊料金屬核心結構包含一圓柱形狀。
  15. 如請求項13所述之電互連結構，其中該非焊料金屬核心結構包含一球狀。
  16. 如請求項13所述之電互連結構，其中該非焊料金屬核心結構包含一金屬材料係選自銅、鎳、及金所組成之族群。
  17. 如請求項13所述之電互連結構，其中該非焊料金屬核心結構包含一第一金屬結構以及一第二金屬結構，該第二金屬結構覆蓋且直接機械接觸該第一 金屬結構之一整個外表面，其中該第一金屬結構之該整個外表面完全地包圍該第一金屬結構，其中該第一金屬結構包含一第一金屬材料，且其中該第二金屬結構包含與該第一金屬材料不同之一第二金屬材料。
  18. 如請求項13所述之電互連結構，更包含：一焊料互連結構，係包含一焊料，其中該第一基板包含一第三導電墊，其中該第二基板包含一第四導電墊，且其中該焊料互連結構電性與機械性地連接該第三導電墊至該第四導電墊。
  19. 如請求項13所述之電互連結構，更包含：一第一晶圓級下填囊封層，包圍該互連結構且填塞該第一基板與該第二基板間之一空間。
  20. 一種形成一電互連結構之方法，包含：提供包含一第一導電墊之一第一基板、包含一第二導電墊之一第二基板、以及包含一非焊料金屬核心結構之一轉移膜，其中該非焊料金屬核心結構包含一圓柱形狀；形成一第一焊料結構於該第一導電墊上；在該形成該第一焊料結構後，第一次定位該轉移膜，使得該非焊料金屬核心結構之一第一側與該第一焊料結構接觸； 在該第一次定位後，第一次加熱該非焊料金屬核心結構至一溫度，係足以使得該第一焊料結構熔化且於該非焊料金屬核心結構之該第一側與該第一導電墊間形成一電性與機械性連接；在該第一次加熱後，自該非焊料金屬核心結構移除該轉移膜；形成一第二焊料結構於該第二導電墊上；在該形成該第二焊料結構後，第二次定位包含該非焊料金屬核心結構之該第一基板，使得該非焊料金屬核心結構之一第二側與該第二焊料結構接觸；以及在該第二次定位後，第二次加熱該非焊料金屬核心結構至一溫度，係足以使得該第二焊料結構熔化且於該非焊料金屬核心結構之該第二側與該第二導電墊間形成一電性與機械性連接，導致該第一導電墊與該第二導電墊間之一電性與機械性連接。
  21. 如請求項20所述之方法，其中該形成該第一焊料結構包含自一轉移基板施加一第一部份熔化焊料至該第一導電墊，該轉移基板包含一第一腔穴填塞有該第一部份熔化焊料，其中該形成該第二焊料結構包含自該轉移基板施加一第二部份熔化焊料至該第二導電墊，該轉移基板包含一第二腔穴填塞有該第二部份熔化焊料。
  22. 如請求項20所述之方法，其中自該非焊料金屬核心結構移除該轉移膜包含雷射消蝕該轉移膜，導致該非焊料金屬核心結構自該轉移膜釋放。
  23. 如請求項20所述之方法，其中該轉移膜以一熱分解黏著劑接合至該非焊料金屬核心結構。
  24. 如請求項20所述之方法，更包含：在自該非焊料金屬核心結構移除該轉移膜後，施加一晶圓級下填囊封層至該第一基板。
  25. 一種形成一電互連結構之方法，包含：提供包含一第一導電墊之一第一基板、包含一第二導電墊之一第二基板、包含一第一腔穴之一第一轉移基板、以及包含一球狀之一非焊料金屬核心結構，其中該非焊料金屬核心結構包含一直徑小於該第一腔穴之直徑；形成一第一焊料結構於該第一導電墊上；分配該非焊料金屬核心結構入該第一轉移基板之該第一腔穴；在該分配後，第一次定位該第一轉移基板使得該非焊料金屬核心結構之一表面之一第一區與該第一焊料結構接觸；在該第一次定位後，第一次加熱該非焊料金屬核心結構至一溫度，係足以使得該第一焊料結構熔 化且於該非焊料金屬核心結構之該表面之該第一區與該第一導電墊間形成一電性與機械性連接；在該第一次加熱後，自該非焊料金屬核心結構移除該第一轉移基板；形成一第二焊料結構於該第二導電墊上；第二次定位包含該非焊料金屬核心結構之該第一基板，使得該非焊料金屬核心結構之該表面之一第二區與該第二焊料結構接觸；以及在該第二次定位後，第二次加熱該非焊料金屬核心結構至一溫度，係足以使得該第二焊料結構熔化且於該非焊料金屬核心結構之該表面之該第二區與該第二導電墊間形成一電性與機械性連接，導致該第一導電墊與該第二導電墊間之一電性與機械性連接。
  26. 如請求項25所述之方法，其中該形成該第一焊料結構包含自一第二轉移基板施加一第一部份熔化焊料至該第一導電墊，該第二轉移基板包含一第二腔穴填塞有該第一部份熔化焊料，其中該形成該第二焊料結構包含自該第二轉移基板施加一第二部份熔化焊料至該第二導電墊，該第二轉移基板包含一第三腔穴填塞有該第二部份熔化焊料。
  27. 如請求項25所述之方法，其中該分配該非焊料金屬核心結構入該第一轉移基板之該第一腔穴包 含，將該非焊料金屬核心結構浸入一液體媒介，且其中該液體媒介包含一液體係選自助熔劑、水、酒精、以及熱分解可溶聚合黏著劑所組成之群組。
  28. 如請求項25所述之方法，其中該第一次定位與該第二次定位包含利用一氣體助熔劑以輔助一焊料濕化程序。
  29. 如請求項25所述之方法，更包含：在自該非焊料金屬核心結構移除該第一轉移基板後，施加一晶圓級下填囊封層至該第一基板。
  30. 一種形成一電互連結構之方法，包含：提供包含一第一導電墊之一第一基板、包含一第二導電墊之一第二基板、包含一第一腔穴之一第一轉移基板、包含一球狀之一第一非焊料金屬核心結構、以及包含一球狀之一第二非焊料金屬核心結構，其中該第一非焊料金屬核心結構包含一直徑小於該第一腔穴之直徑，且其中該第二非焊料金屬核心結構包含一直徑小於該第一腔穴之直徑；形成一第一焊料結構於該第一導電墊上；第一次分配該第一非焊料金屬核心結構入該第一轉移基板之該第一腔穴；在該分配後，第一次定位該第一轉移基板使得該第一非焊料金屬核心結構之一表面之一第一區 與該第一焊料結構接觸；在該第一次定位後，第一次加熱該第一非焊料金屬核心結構至一溫度，係足以使得該第一焊料結構熔化且於該第一非焊料金屬核心結構之該表面之該第一區與該第一導電墊間形成一電性與機械性連接；在該第一次加熱後，自該第一非焊料金屬核心結構移除該第一轉移基板；施加一第一下填囊封層於該第一基板；形成一第二焊料結構於該第一非焊料金屬核心結構之該表面之一第二區上；第二次分配該第二非焊料金屬核心結構入該第一轉移基板之該第一腔穴；在該第二次分配後，第二次定位該第一轉移基板，使得該第二非焊料金屬核心結構之一表面之一第一區與該第二焊料結構接觸；在該第二次定位後，第二次加熱該第二非焊料金屬核心結構至一溫度，係足以使得該第二焊料結構熔化且於該第一非焊料金屬核心結構之該表面之該第二區與該第二非焊料金屬核心結構之該表面之該第一區間形成一電性與機械性連接；在該第二次加熱後，自該第二非焊料金屬核心結構移除該第一轉移基板；形成一第三焊料結構於該第二導電墊上；第三次定位包含該第一非焊料金屬核心結構 與該第二非焊料金屬核心結構之該第一基板，使得該第二非焊料金屬核心結構之該表面之一第二區與該第三焊料結構接觸；在該第三次定位後，第三次加熱該第二非焊料金屬核心結構至一溫度，係足以使得該第三焊料結構熔化且於該第二非焊料金屬核心結構之該表面之該第二區與該第二導電墊間形成一電性與機械性連接，導致該第一導電墊與該第二導電墊間之一電性與機械性連接。
  31. 如請求項30所述之方法，其中該形成該第一焊料結構包含自一第二轉移基板施加一第一部份熔化焊料至該第一導電墊，該第二轉移基板包含一第二腔穴填塞有該第一部份熔化焊料，其中該形成該第二焊料結構包含自該第二轉移基板施加一第二部份熔化焊料至該第一非焊料金屬核心結構之該表面之該第二區，該第二轉移基板包含一第三腔穴填塞有該第二部份熔化焊料，且其中該形成該第三焊料結構包含自該第二轉移基板施加一第三部份熔化焊料至該第二導電墊，該第二轉移基板包含一第四腔穴填塞有該第三部份熔化焊料。
  32. 如請求項30所述之方法，其中該分配該第一非焊料金屬核心結構入該第一轉移基板之該第一腔穴包含，將該第一非焊料金屬核心結構浸入一第一液 體媒介，其中該分配該第二非焊料金屬核心結構入該第一轉移基板之該第一腔穴包含，將該第二非焊料金屬核心結構浸入一第二液體媒介，且其中該第一液體媒介與該第二液體媒介各包含一液體係選自助熔劑、水、酒精、以及熱分解可溶聚合黏著劑所組成之群組。
  33. 如請求項30所述之方法，其中該第一次定位、該第二次定位、以及該第三次定位包含利用一氣體助熔劑以輔助一焊料濕化程序。
  34. 如請求項30所述之方法，更包含：在自該第二非焊料金屬核心結構移除該第一轉移基板後，施加一第二下填囊封層至該第一下填囊封層。
  35. 如請求項30所述之方法，其中該第一下填囊封層包含與該第二下填囊封層所包含之材料不同之一材料。
  36. 如請求項30所述之方法，其中該第一下填囊封層包含一第一熱膨脹係數，其中該第二下填囊封層包含一第二熱膨脹係數，且其中該第二熱膨脹係數大於該第一熱膨脹係數。
  37. 一種形成一電互連結構之方法，包含：提供包含一第一導電墊與一第二導電墊之一第一基板、包含一第三導電墊與一第四導電墊之一第二基板、包含一第一腔穴與一第二腔穴之一第一轉移基板、以及包含一球狀之一非焊料金屬核心結構，其中該非焊料金屬核心結構包含一直徑小於該第一腔穴之直徑；形成一第一焊料結構於該第一導電墊上；形成一第二焊料結構於該第二導電墊上；以具有對應該第一腔穴之一開口的一膜覆蓋該第二腔穴；分配該非焊料金屬核心結構入該第一轉移基板之該第一腔穴；第一次定位該第一轉移基板，使得該非焊料金屬核心結構之一表面之一第一區與該第一焊料結構接觸，且該第二腔穴對準該第二焊料結構；第一次加熱該非焊料金屬核心結構至一溫度，係足以使得該第一焊料結構熔化且於該非焊料金屬核心結構之該表面之該第一區與該第一導電墊間形成一電性與機械性連接；自該非焊料金屬核心結構移除該第一轉移基板；形成一第三焊料結構於該第三導電墊上；形成一第四焊料結構於該第四導電墊上； 第二次定位包含該非焊料金屬核心結構之該第一基板，使得該非焊料金屬核心結構之該表面之一第二區與該第三焊料結構接觸，且該第二焊料結構與該第四焊料結構接觸；第二次加熱該非焊料金屬核心結構至一溫度，係足以使得該第三焊料結構熔化且於該非焊料金屬核心結構之該表面之該第二區與該第三導電墊間形成一電性與機械性連接，導致該第一導電墊與該第三導電墊間之一電性與機械性連接；第三次加熱該第二焊料結構與該第四焊料結構至一溫度，係足以使得該第二焊料結構與該第四焊料結構熔化，且於該第二焊料結構與該第四焊料結構間形成一電性與機械性連接，導致該第二導電墊與該第四導電墊間之一電性與機械性連接，其中該第二次加熱與該第三次加熱同時執行。
  38. 如請求項37所述之方法，其中該形成該第一焊料結構包含自一第二轉移基板施加一第一部份熔化焊料至該第一導電墊，該第二轉移基板包含一第三腔穴填塞有該第一部份熔化焊料，其中該形成該第二焊料結構包含自該第二轉移基板施加一第二部份熔化焊料至該第二導電墊，該第二轉移基板包含一第四腔穴填塞有該第二部份熔 化焊料，且其中該形成該第三焊料結構包含自一第三轉移基板施加一第三部份熔化焊料至該第三導電墊，該第三轉移基板包含一第五腔穴填塞有該第三部份熔化焊料，且其中該形成該第四焊料結構包含自該第三轉移基板施加一第四部份熔化焊料至該第四導電墊，該第三轉移基板包含一第六腔穴填塞有該第四部份熔化焊料。
  39. 如請求項37所述之方法，其中該分配該非焊料金屬核心結構入該第一轉移基板之該第一腔穴包含，將該非焊料金屬核心結構浸入一液體媒介，且其中該液體媒介包含一液體係選自助熔劑、水、酒精、以及熱分解可溶聚合黏著劑所組成之群組。
  40. 如請求項37所述之方法，其中該第一次定位與該第二次定位包含利用一氣體助熔劑以輔助一焊料濕化程序。
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US7786001B2 (en) 2010-08-31
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