CN101652847B - 电学互连结构及其形成方法 - Google Patents

电学互连结构及其形成方法 Download PDF

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Publication number
CN101652847B
CN101652847B CN200880011580.7A CN200880011580A CN101652847B CN 101652847 B CN101652847 B CN 101652847B CN 200880011580 A CN200880011580 A CN 200880011580A CN 101652847 B CN101652847 B CN 101652847B
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solder
metallic core
electricity
substrate
conductive gasket
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CN200880011580.7A
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CN101652847A (zh
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S·L·布奇瓦尔特
B·K·福尔曼
P·A·格鲁伯
罗载雄
史达元
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Ultratech Corp
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International Business Machines Corp
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Abstract

一种电学结构及其形成方法。该电器结构包括包含第一导电衬垫的第一衬底，包含第二导电衬垫的第二衬底，以及将第一导电衬垫电学及机械地连接到第二导电衬垫的互连结构。该互连结构包含具有圆柱或球体形状的无焊料金属芯结构，第一焊料结构，以及第二焊料结构。第一焊料结构将无焊料金属芯结构的第一部分电学及机械地连接到第一导电衬垫。第二焊料结构将无焊料金属芯结构的第二部分电学及机械地连接到第二导电衬垫。

Description

电学互连结构及其形成方法
技术领域
本发明涉及电学互连结构以及形成电学互连结构的相关方法。
背景技术
结构间的连接通常不可靠的并且易发生失效。因此，在本领域中需要克服至少一个上述的不足与局限。
发明内容
本法提供一种电学互连结构，该电学互连结构包括：包含第一导电衬垫的第一衬底；包含第二导电衬垫的第二衬底；以及将所述第一导电衬垫电学及机械连接到所述第二导电衬垫的互连结构，其中所述互连结构包含无焊料金属芯结构，与所述无焊料金属芯结构的第一部分直接机械接触的第一焊料结构，以及与所述无焊料金属芯结构的第二部分直接机械接触的第二焊料结构，其中所述第一焊料结构将所述无焊料金属芯结构的所述第一部分电学及机械连接到所述第一导电衬垫，以及其中所述第二焊料结构将所述无焊料金属芯结构的所述第二部分电学及机械连接到所述第二导电衬垫。
本发明提供一种电学结构，该电学结构包括：包含第一导电衬垫的第一衬底；包含第二导电衬垫的第二衬底；以及将所述第一导电衬垫电学及机械连接到所述第二导电衬垫的互连结构，其中所述互连结构包含无焊料金属芯结构以及覆盖所述无焊料金属芯结构的整个外表面的焊料层，其中所述整个外表面完全包围所述第一金属结构，其中所述焊料层与所述无焊料金属芯结构的所述整个表面直接电学及机械接触，以及其中所述焊料层将所述无焊料金属芯结构电学及机械连接到所述第一导电衬垫及所述第二导电衬垫。
本发明提供一种用于形成电学结构的方法，该方法包括：提供包含第一导电衬垫的第一衬底，包含第二导电衬垫的第二衬底，以及包含无焊料金属芯结构的转移膜，其中所述无焊料金属芯结构具有圆柱形状；在所述第一导电衬垫上形成第一焊料结构；在形成所述第一焊料结构之后进行第一定位，即定位所述转移膜使得所述无焊料金属芯结构的第一侧面与所述第一焊料结构接触；在所述第一定位之后进行第一加热，即将所述无焊料金属芯结构加热到某一温度，其中该温度足够以引起所述第一焊料结构熔化并形成所述无焊料金属芯结构的所述第一侧面与所述第一导电衬垫之间的电学及机械连接；在所述第一加热之后，将所述转移膜由所述无焊料金属芯结构上去除；在所述第二导电衬垫上形成第二焊料结构；在形成所述第二焊料结构之后进行第二定位，即定位包含所述无焊料金属芯结构的所述第一衬底使得所述无焊料金属芯结构的第二侧面与所述第二焊料结构接触；以及在所述第二定位之后进行第二加热，即将所述无焊料金属芯结构加热到某一温度，其中该温度足够以引起所述第二焊料结构的焊料熔化并形成所述无焊料金属芯结构的所述第二侧面与所述第二导电衬垫之间的电学及机械连接，从而导致所述第一导电衬垫与所述第二导电衬垫之间的电学及机械连接。
本发明提供一种用于形成电学结构的方法，该方法包括：提供包含第一导电衬垫的第一衬底，包含第二导电衬垫的第二衬底，包含第一腔体的第一转移衬底，以及具有球体形状的无焊料金属芯结构，其中所述无焊料金属芯结构的直径小于所述第一腔体的直径；在所述第一导电衬垫上形成第一焊料结构；将所述无焊料金属芯结构分发到所述第一转移衬底内的所述第一腔体中；在所述分发之后进行第一定位，即定位所述第一转移衬底使得所述无焊料金属芯结构的表面的第一部分与所述第一焊料结构接触；在所述第一定位之后进行第一加热，即将所述无焊料金属芯结构加热到某一温度，其中该温度足够以引起所述第一焊料结构熔化并形成所述无焊料金属芯结构的所述表面的所述第一部分与所述第一导电衬垫之间的电学及机械连接；在所述第一加热之后，将所述第一转移衬底由所述无焊料金属芯结构上去除；在所述第二导电衬垫上形成第二焊料结构；进行第二定位，即定位包含所述无焊料金属芯结构的所述第一衬底使得所述无焊料金属芯结构的所述表面的第二部分与所述第二焊料结构接触；以及在所述第二定位之后进行第二加热，即将所述无焊料金属芯结构加热到某一温度，其中该温度足够以引起所述第二焊料结构的焊料熔化并形成所述无焊料金属芯结构的所述表面的所述第二部分与所述第二导电衬垫之间的电学及机械连接，从而导致所述第一导电衬垫与所述第二导电衬垫之间的电学及机械连接。
本发明提供一种用于形成电学结构的方法，该方法包含：提供包含第一导电衬垫的第一衬底，包含第二导电衬垫的第二衬底，包含第一腔体的第一转移衬底，具有球体形状的第一无焊料金属芯结构，以及具有球体形状的第二无焊料金属芯结构，其中所述第一无焊料金属芯结构的直径小于所述第一腔体的直径，以及其中所述第二无焊料金属芯结构的直径小于所述第一腔体的直径；在所述第一导电衬垫上形成第一焊料结构；进行第一分发，即将所述第一无焊料金属芯结构分发到所述第一转移衬底内的所述第一腔体中；在所述第一分发之后进行第一定位，即定位所述第一转移衬底使得所述第一无焊料金属芯结构的表面的第一部分与所述第一焊料结构接触；在所述第一定位之后进行第一加热，即将所述第一无焊料金属芯结构加热到某一温度，其中该温度足够以引起所述第一焊料结构熔化并形成所述第一无焊料金属芯结构的所述表面的所述第一部分与所述第一导电衬垫之间的电学及机械连接；在所述第一加热之后，将所述第一转移衬底由所述无焊料金属芯结构上去除；将第一底充密封剂层施加于所述第一衬底上；在所述第一无焊料金属芯结构的所述表面的第二部分上形成第二焊料结构；进行第二分发，即将所述第二无焊料金属芯结构分发到所述第一转移衬底内的所述第一腔体中；在所述第二分发之后进行第二定位，即定位所述第一转移衬底使得所述第二无焊料金属芯结构的表面的第一部分与所述第二焊料结构接触；在所述第二定位之后进行第二加热，即将所述第二无焊料金属芯结构加热到某一温度，其中该温度足够以引起所述第二焊料结构熔化并形成所述第一无焊料金属芯结构的所述表面的所述第二部分与所述第二无焊料金属芯结构的所述表面的所述第一部分之间的电学及机械连接；在对所述第二无焊料金属芯结构的所述第一部分进行所述加热之后，将所述第一转移衬底由所述第二无焊料金属芯结构上去除；在所述第二导电衬垫上形成第三焊料结构；进行第三定位，即定位包含所述第一无焊料金属芯及所述第二无焊料金属芯结构的所述第一衬底，使得所述第二无焊料金属芯结构的所述表面的第二部分与所述第二焊料结构接触；以及在所述第三定位之后进行第三加热，即将所述第二无焊料金属芯结构加热到某一温度，其中该温度足够以引起所述第三焊料结构焊料熔化并形成所述第二无焊料金属芯结构的所述表面的所述第二部分与所述第二导电衬垫之间的电学及机械连接，从而导致所述第一导电衬垫与所述第二导电衬垫之间的电学及机械连接。
本发明提供一种用于形成电学结构的方法，该方法包括：提供包含第一导电衬垫及第二导电衬垫的第一衬底，包含第三导电衬垫及第四导电衬垫的第二衬底，包含第一腔体及第二腔体的第一转移衬底，以及具有球体形状的无焊料金属芯结构，其中所述的无焊料金属芯结构的直径小于所述第一腔体的直径；在所述第一导电衬垫上形成第一焊料结构；在所述第二导电衬垫上形成第二焊料结构；以具有与所述第一腔体对应的开口的膜覆盖所述第二腔体；将述无焊料金属芯结构分发到所述第一转移衬底内的所述第一腔体中；进行第一定位，即定位所述第一转移衬底使得所述无焊料金属芯结构的表面的第一部分与所述第一焊料结构接触并且使所述第二腔体与所述第二焊料结构对准；进行第一加热，即将所述无焊料金属芯结构加热到某一温度，其中该温度足够以引起所述第一焊料结构熔化并形成所述无焊料金属芯结构的所述表面的所述第一部分与所述第一导电衬垫之间的电学及机械连接；将所述第一转移衬底由所述无焊料金属芯结构上去除；在所述第三导电衬垫上形成第三焊料结构；在所述第四导电衬垫上形成第四焊料结构；进行第二定位，即定位包含所述无焊料金属芯结构的所述第一衬底使得所述无焊料金属芯结构的所述表面的第二部分与所述第三焊料结构接触并且所述第二焊料结构与所述第四焊料结构接触；进行第二加热，即将所述无焊料金属芯结构加热到某一温度，其中该温度足够以引起所述第三焊料结构的焊料熔化并形成所述无焊料金属芯结构的所述表面的所述第二部分与所述第三导电衬垫之间的电学及机械连接，从而导致所述第一导电衬垫与所述第三导电衬垫之间的电学及机械连接；以及进行第三加热，即将所述第二焊料结构及所述第四焊料结构加热到某一温度，其中该温度足够以引起所述第二焊料结构及所述第四焊料结构熔化并形成所述第二焊料结构与所述第四焊料结构之间的电学及机械连接，从而导致所述第二导电衬垫与所述第四导电衬垫之间的电学及机械连接，其中所述第二加热及所述第三加热同时进行。
本发明有利地提供了简单的结构以及用于形成结构间的连接的相关方法。
附图说明
图1示出了根据本发明的实施方案的第一种电学结构的横截面图。
图2描述了图1的第一种替代示出根据本发明的实施方案的第二种电学结构的横截面图。
图3描述了图2的第一种替代示出根据本发明的实施方案的第三种电学结构的横截面图。
图4描述了图1的第一种替代示出根据本发明的实施方案的第四种电学结构的横截面图。
图5示出了根据本发明的实施方案的第五种电学结构的横截面图。
图6描述了图2的第二种替代示出根据本发明的实施方案的第六种电学结构的横截面图。
图7描述了图1的第二种替代示出根据本发明的实施方案的第七种电学结构的横截面图。
图8描述了图3的第二种替代示出根据本发明的实施方案的第八种电学结构的横截面图。
图9A-9G示出了根据本发明的实施方案产生图1的电学结构的过程。
图10A-10I示出了根据本发明的实施方案产生图2、图3、及图5的电学结构的过程。
图11A-11F示出了根据本发明的实施方案产生图4的电学结构的过程。
具体实施方式
图1示出了根据本发明的实施方案的电学结构2a的横截面图。电学结构2a包括衬底1、衬底4、以及多个互连结构5a。衬底1包括多个导电衬垫(pad)10。导电衬垫10的每个衬垫都可以连接到衬底1内的导线或电学元件。衬底4包含多个导电衬垫12。导电衬垫12的每个衬垫都可以连接到衬底4内的导线或电学元件。衬底1尤其可以包括半导体器件(例如，集成电路芯片、半导体晶片等)、芯片载体(有机的或无机的)、印制电路板等。衬底4尤其可以包括半导体器件(例如，集成电路芯片、半导体晶片等)、芯片载体(有机的或无机的)、印制电路板等。每个互连结构5a包括无焊料金属(即，不含有任何焊料材料)芯结构14和焊料结构6a。焊料结构6a包含焊料。焊料在此定义为用来在没有熔化金属表面的情况下将金属表面结合起来的具有低熔点(即，大约100～大约340摄氏度)的金属合金。焊料结构6a包括完全包围无焊料金属芯结构14的焊料层。作为选择(即，替代完全包围无焊料金属芯结构14的焊料层)，焊料结构6a能够包含附着于无焊料金属芯结构的顶面14a的第一部分焊料9a以及附着于无焊料金属芯结构14的底面14b的第二部分焊料9b。每个无焊料金属芯结构14可以包含不含有焊料的任何导电性金属材料，尤其包括铜、金、镍等。每个互连结构5a将导电衬垫10电学及机械连接到导电衬垫12。无焊料金属芯结构14具有圆柱形状。焊料结构6a可以包含用于倒装芯片互连的任何焊料材料，尤其包括锡合金，例如SnCu、SnAgCu、SnPb等。
图2描述了图1的第一种替代示出根据本发明的实施方案的电学结构2b的横截面图。电学结构2b包括衬底1、衬底4、以及多个互连结构5b。与图1的电学结构2a相比，图2电学结构2b包括多个互连结构5b。每个互连结构5b都包括球形的无焊料(即，不含有任何焊料材料)金属芯结构17和焊料结构6b。每一焊料结构6b都包含完全包围关联的无焊料金属芯结构17的焊料层。另外，每个互连结构5b可以包括附加的焊料结构6d。每个焊料结构6b将关联的无焊料金属芯结构17电学及机械连接到关联的导电衬垫10。每一焊料结构6d将关联的无焊料金属芯结构17电学及机械连接到关联的导电衬垫12(即，通过焊料结构6b)。上述连接导致每个连接结构5b将导电衬垫10电学及机械地连接到关联的导电衬垫12。选择地，两种不同类型的焊料材料可以被使用于焊料结构6b和焊料结构6d。例如，焊料结构6b可以包含AuSn焊料材料而焊料结构6d可以包含以下焊料材料，尤其例如SnAg、SnCu、SnAgCu、SnBi等。对于第一级的面阵列互连，每个无焊料金属芯结构17可以具有大约25～大约150微米的直径。对于第二级的面阵列互连(例如，球栅阵列(BGA))，每个无焊料金属芯结构17可以具有大约0.2～大约1.5mm的直径。每个无焊料金属芯结构17可以包含不含有焊料的任何导电性金属材料的芯，尤其包括铜、金、镍等。另外，每个无焊料金属芯结构17可以包括包围(例如，参见下文中图3的层19)无焊料金属芯结构17的无焊料金属材料(即，不同于无焊料金属芯结构17所包含的材料)的附加层。所述附加层可以包含任何导电性金属材料，尤其包括镍、金、锡等。
图3描述了图2的第一种替代示出根据本发明的实施方案的电学结构2c的横截面图。电学结构2c包括衬底1、衬底4、以及多个互连结构5c。与图2的电学结构2b相比，图3的电学结构2c包括多个互连结构5c。每个互连结构5c包括无焊料金属芯结构17、焊料结构6c、以及焊料结构6d。每个焊料结构6c将关联的无焊料金属芯结构17电学及机械地连接到关联的导电衬垫10。每一焊料结构6d将关联的无焊料金属芯结构17电学及机械地连接到关联的导电衬垫12。上述连接导致每个互连结构5c将导电衬垫10电学及机械地连接到关联的导电衬垫12。选择地，两种不同类型的焊料材料可以被使用于焊料结构6c和焊料结构6d。例如，焊料结构6c可以包含AuSn焊料材料而焊料结构6d可以包含以下焊料材料，尤其例如SnAg、SnCu、SnAgCu、SnBi等。每个无焊料金属芯结构17可以包含不含有焊料的任何导电性金属材料的芯，尤其包括铜、金、镍等。另外，每个无焊料金属芯结构17可以包括包围无焊料金属芯结构17的无焊料金属材料(即，不同于无焊料金属芯结构17所包含的材料)的附加层19。附加层19可以包含任何导电性金属材料，尤其包括镍、金属、锡等。
图4描述了图3的第一种替代示出根据本发明的实施方案的电学结构2d的横截面图。电学结构2d包括衬底1、衬底4、以及多个互连结构5d。与图3的电学结构2c相比，图4的电学结构2d包括多个互连结构5d。每个互连结构5d包括无焊料金属芯结构17a、无焊料金属芯结构17b、焊料结构6c、焊料结构6d、焊料结构6e。另外(即，选择地)，电学结构2d包括底充密封剂(underfillencapsulant)层25a和底充密封剂层25b。每个焊料结构6e将无焊料金属芯结构17a电学及机械地连接到关联的无焊料金属芯结构17b。每个焊料结构6c将无焊料金属芯结构17a电学及机械地连接到关联的导电衬垫10。每个焊料结构6d将无焊料金属芯结构17b电学及机械地连接到关联的导电衬垫12。上述连接导致每个互连结构5d将导电衬垫10电学及机械地连接到关联的导电衬垫12。可选地，三种不同类型的焊料材料可以被用于焊料结构6c、焊料结构6d、以及焊料结构6e。例如，焊料结构6c可以包含AuSn焊料材料，焊料结构6d可以包含尤其例如SnAg、SnCu等焊料材料，以及焊料结构6e可以包含尤其例如SnAgCu、SnBi等焊料材料。每个无焊料金属芯结构17a和17b可以包含不含有焊料的任何导电性金属材料的芯，尤其包括铜、金、镍等。无焊料金属芯结构17a可以包含第一种材料(例如铜)而无焊料金属芯结构17b可以包含第二种材料(例如金)。另外，每个无焊料金属芯结构17a和17b可以包括包围无焊料金属芯结构17a和17b的金属材料(即，不同于无焊料金属芯结构17a和17b所包含的材料)的附加层19。附加层19可以包含任何导电性金属材料，尤其包括镍、金、锡等。另外，无焊料金属芯结构17a可以包括含有与无焊料金属芯结构17b上的层19不同的材料的层19。底充密封剂层25a包围无焊料金属芯结构17a并与衬底1接触。底充密封剂层25b包围无焊料金属芯结构17b并与衬底4接触。底充密封剂层25a与底充密封剂层25b接触。底充密封剂层25a可以包含第一种材料(例如，高填充二氧化硅-环氧树脂复合粘合剂)而底充密封剂层25b可以包含第二种不同的材料(例如，低填充二氧化硅-环氧树脂复合粘合剂)。底充密封剂层25a可以具有与密封剂层25b所具有的第二种热膨胀系数(例如，范围大约为15.1-40ppm/C)不同的(例如，更低的)第一种热膨胀系数(例如，范围大约为5-15ppm/C)。底充密封剂层25a可以另外包含到处散布的填充物25c。
图5示出了根据本发明的实施方案的电学结构2e的横截面图。图5中的电学结构2e是图2-3的电学结构2b和2c的组合。除了图2-3的电学结构2b和2c以外，图5中的电学结构2e还包括将某些导电衬垫10电学及机械地连接到关联的导电衬垫12的互连结构29(即，包含焊料)。因此，电学结构2e使用了互连结构5b、5c、及29的组合将导电衬垫10电学及机械地连接到关联的导电衬垫12。注意，互连结构5b、5c、及29的任何组合与任何构型都可以使用来将导电衬垫10电学及机械地连接到关联的导电衬垫12。例如，电学结构2e可以只包括互连结构5c和29以将导电衬垫10电学及机械地连接到关联的导电衬垫12。可以存在任意数量或任意比的互连结构5b、5c、及29以任意模式布置(例如，互连结构5b和29：可以被布置使得它们处于交替的位置上，可以被布置于随机的位置上，可以被布置使得每三个互连结构29就有一个互连结构5b，可以被布置使得互连结构5b只提供电源及接地的连接而互连结构29仅被布置用于信号互连，等等)。另外，电学结构2e可以包括在衬底1和衬底4之间的底充密封剂层31。
图6描述了图2的第二种替代示出根据本发明的实施方案的电学结构2f的横截面图。与图2的电学结构2b相比，图6的电学结构2f包括在衬底1和衬底4之间的底充密封剂层32a。在衬底1是半导体器件或硅晶片的情况下，底充密封剂层32a可以交替地包含在芯片结合之前施加的或在互连结构5b上方的硅晶片上施加的底充层。这样的底充层被定义为晶片级底充。
图7描述了图1的第二种替代示出根据本发明的实施方案的电学结构2g的横截面图。与图1的电学结构2a相比，图7的电学结构2g包括在衬底1和衬底4之间的底充密封剂层32b。在衬底1是半导体器件或硅晶片的情况下，底充密封剂层32b可以交替地包含在芯片结合之前施加的或在互连结构5a上方的硅晶片上施加的底充层。这样的底充层被定义为晶片级底充。
图8描述了图3的第二种替代示出根据本发明的实施方案的电学结构2h的横截面图。与图3的电学结构2c相比，图8的电学结构2h包括在衬底1和衬底4之间的底充密封剂层32c。在衬底1是半导体器件或硅晶片的情况下，底充密封剂层32c可以交替地包含在芯片结合之前施加的或在互连结构5c之上的硅晶片上施加的底充层。这样的底充层被定义为晶片级底充。
图9A-9G示出了根据本发明的实施方案产生图1的电学结构2a的过程。
图9A示出了根据本发明的实施方案形成于绝缘层35之上的无焊料金属层37的横截面图。无焊料金属层37可以包含任何无焊料金属材料，尤其例如铜、金、镍等。绝缘层35可以包含任何绝缘材料，尤其例如聚合物膜(例如聚酰亚胺)等。
图9B示出了根据本发明的实施方案图9A的结构在为了形成结构35a而形成无焊料金属互连结构14之后的横截面图。无焊料金属互连结构14可以通过减蚀刻无焊料金属层37(即，图1的)的多个部分以便形成无焊料金属互连结构14的方式来形成。无焊料金属互连结构14可以具有多种宽度、高度、以及高-宽纵横比。减蚀刻(subtractive etching)过程包括：
1.施加及图形化保护性光刻胶层。
2.使用化学溶液来蚀刻或溶解铜的未保护区域。
3.剥去保护性光刻胶层。
每个无焊料金属互连结构14可以具有约10～约100微米的宽度以及具有约1∶1～约5∶1的高-宽纵横比。
图9C示出根据本发明的实施方案图1的衬底1在已经形成第一部分焊料9a(即，焊料结构)从而形成结构35b之后的横截面图。例如，衬底1可以包括制备有导电互连衬垫(例如，参见图1的衬垫10)的硅器件晶片。焊料被施加在衬垫上以便形成第一部分焊料9a。可以使用任何方法来将焊料施加到导电互连衬垫上，尤其包括将焊料用作注射成型的焊料。
图9D示出了根据本发明的实施方案与图9C的结构35b对准的图1的图9B的结构35a横截面图。使无焊料金属互连结构14与关联的第一部分焊料9a对准。对准过程可以包括使用市场上可买到的，利用基准在衬底1和绝缘层35上的光传感的焊接工具。
图9E示出了根据本发明的实施方案在图9D所描述的对准过程之后形成的结构35c的横截面图。在图9E中，转移过程已经通过将图9D所对准的组件加热到用来形成第一部分焊料9a的焊料的熔点(即，在助熔剂或助熔气氛的协助下)之上的温度的方式进行。选择地，转移过程可以由通过绝缘层35的背面21所施加的激光释放过程来辅助。激光所产生的光能由无焊料金属互连结构14的接触面23处的绝缘层35所吸收，引起粘附力(即，在接触面23处的)被降低从而将无焊料金属互连结构14由绝缘层35释放。作为选择，粘合剂(即，在接触面23处的)可以在上文所描述的焊料熔化过程中被降解并将无焊料金属互连结构14由绝缘层35释放。
图9F示出了根据本发明的实施方案使图9E的结构35c与结构35d对准的过程的横截面图。结构35d包括含有所形成的焊料结构9b(即由与图9C所进行的过程相似的过程所形成的)的衬底4。
图9G示出了根据本发明的实施方案所完成的与图1的电学结构2a相似的电学结构35e。通过无焊料金属互连结构14、焊料结构9a、以及焊料结构9b的衬底1到衬底4的组件被这样实现，即在助熔剂或助熔气氛的帮助下将无焊料金属互连结构14的温度提高到焊料结构9b的熔化温度之上。选择地，无焊料金属互连结构14、焊料结构9a、以及焊料结构9b可以在衬底1结合于衬底4之后通过毛细管底充而用聚合材料来封装。作为选择，底充密封剂可以在衬底1结合到衬底4之前在晶片级上施加或在切单的器件上施加。
图10A-10I示出了根据本发明的实施方案产生图2的电学结构2b、图3的电学结构2c、以及图5的电学结构2e的过程。注意，尽管图10A-10I示出了将焊料作为注射成型的焊料进行施加的工艺，但是任何焊料施加工艺都可以使用。
图10A示出了根据本发明的实施方案包括布置于衬底1(即，来自图2和3)之上的填充的玻璃或硅模具40的结构39a的横截面图。玻璃或硅模具40用焊料填充，其中该焊料在由玻璃模具中释放时将变成图2的焊料结构6b、图3的焊料结构6c、以及图5的焊料结构6b。焊料可以包括适合于倒装芯片互连的任何焊料，尤其包括锡合金，尤其例如AuSn、SnCu、SnAgCu等。焊料可以具有高熔点使得焊料结构6b、6c在随后的步骤中不会熔化。
图10B示出了根据本发明的实施方案由图10A的结构39a所形成的结构39b的横截面图。在中图10B，焊料已经由玻璃或硅模具40中释放以形成与衬底1上的导电衬垫10附接的焊料结构6c。
图10C示出了根据本发明的实施方案包括多个无焊料金属芯结构17的转移衬底43的横截面图。无焊料金属芯结构17被定位于转移衬底43内的腔体43a中。每个腔体43a具有与无焊料金属芯结构17近似的尺寸，腔体的位置对应于导电衬垫10上的关联的焊料结构6c的位置。转移衬底43可以尤其包括玻璃、硅，或者使用于注射成型的焊料模具的任何材料等。无焊料金属芯结构17可以被分发到腔体43a内，作为溶剂中的浆体，溶剂例如水酒精(例如，异丙醇)等。溶剂可以包括适量的熔接剂(flux)以参与焊料结构6c对无焊料金属芯结构17的润湿。在无焊料金属芯结构17被涂有金的情况下，熔接剂并非必需的。选择地，溶剂可以另外包括少量的热可降解的聚合粘合剂以帮助将无焊料金属芯结构17保留于腔体43a中。腔体43a被制作成在无焊料金属新机构17的分发过程中只引起一个无焊料金属芯结构17落入其中的尺寸。
图10D示出了根据本发明的实施方案包括被选择的多个无焊料金属芯结构17的图10C的转移衬底43的横截面图。作为该过程的选择特征，转移衬底43可以覆盖以具有与某些预定部分的腔体43a相匹配的通孔的聚合膜(没有示出)。由聚合膜所覆盖的预定部分的腔体43a将不会接收无焊料金属芯结构17。预定部分的腔体43a允许封装设计工程师选择性地布置无焊料金属芯结构17。另外，焊料互连29可以有选择地布置于某些腔体43a中(即，作为选择无焊料金属芯结构17的替代)以布置于衬底1上。在该选项中，转移衬底43可以覆盖以具有与剩余腔体43a相匹配的通孔的第二聚合膜(没有示出)。由聚合膜所覆盖的腔体43a将不会接收焊料互连29。
图10E示出了根据本发明的实施方案定位于含有无焊料金属芯结构17的转移衬底43之上的图10B的衬底1的横截面图。图10B的衬底1被定位于含有无焊料金属芯结构17的转移膜衬底43之上以便将无焊料金属芯结构17转移到衬底1上。
图10F示出了根据本发明的实施方案衬底1在无焊料金属芯结构17已经由转移衬底43上释放并连接到焊料结构6b之后的横截面图。在图10F中，焊料结构6b完全包围无焊料金属芯结构17。
图10G描述了图10F的一种替代示出根据本发明的实施方案的包含衬底1在无焊料金属芯结构17已经由转移衬底43释放并且被连接到焊料结构6c之后的结构39c的横截面图。在图10G中，焊料结构6c部分包围无焊料金属芯结构17。
图10H示出了根据本发明的实施方案位于衬底4之上的衬底1的横截面图。衬底1被连接到衬底4以便形成图2的电学结构2b。
图10I示出了根据本发明的实施方案位于衬底4之上的衬底1的替代横截面图。在使用图10D的选项的情况下(即，包含焊料互连结构29)，定位(没有示出)类似于图10I所示的那样进行。衬底1被连接到衬底4以便形成图3的电学结构2c。
图11A-11F示出了根据本发明的实施方案产生图4的电学结构2d的过程。
图11A示出了根据本发明的实施方案含有底充层25a的图10G的结构39c。图11A中的结构39c已经通过参照图10A-10E所描述的过程步骤形成。底充层25a可以包括填充物25c以产生低热膨胀系数(CTE)。底充层25a可以具有与衬底1的热膨胀系数相似的热膨胀系数(CTE)。
图11B示出了根据本发明的实施方案包括定位于无焊料金属芯结构17a之上的玻璃或硅模具40b的结构39c。玻璃或硅模具40b由焊料填充，其中该焊料由模具40b中释放时将变成图4的焊料结构6e。焊料可以包括适合于倒装芯片互连的任何焊料，尤其包括锡合金，尤其例如AuSn、SnCu、SnAgCu等。焊料可以具有高熔点使得焊料结构6e在随后的步骤中不会熔化。
图11C示出了根据本发明的实施方案包括与无焊料金属芯结构17a附接的焊料结构6e的结构39c的横截面图。在图11C中，焊料已经由玻璃或硅模具40b中释放以形成与无焊料金属芯结构17a附接的焊料结构6e。
图11D示出了根据本发明的实施方案定位于含有无焊料金属芯结构17b的转移衬底43之上的图11C的结构39c的横截面图。图11C的结构39c被定位于包含无焊料金属芯结构17b的转移衬底43之上以便将无焊料金属芯结构17b转移并连接到无焊料金属芯结构17a上。
图11E示出了根据本发明的实施方案在无焊料金属芯结构17b已经被连接到无焊料金属芯结构17a之后的图11D的结构39c的横截面图。
图11F示出了根据本发明的实施方案包括施加于底充层25a之上的底充层25b的图11E的结构39c的横截面图。在底充层25b施加到底充层25a上后，衬底1被连接到衬底4以便形成图4的电学结构2d。
虽然本发明的实施方案在此已经通过实例进行了描述，但是许多修改和变化对于本领域技术人员是显而易见的。因此，所附上的权利要求意指包括所有属于本发明的限定范围内的修改和变化。

Claims (10)

1.一种电学结构，包括：
包含第一导电衬垫的第一衬底；
包含第二导电衬垫的第二衬底；以及
将所述第一导电衬垫电学及机械地连接到所述第二导电衬垫的互连结构，其中所述互连结构包含无焊料金属芯结构、与所述无焊料金属芯结构的第一部分直接机械接触的第一焊料结构、以及与所述无焊料金属芯结构的第二部分直接机械接触的第二焊料结构，其中所述第一焊料结构将所述无焊料金属芯结构的所述第一部分电学及机械地连接到所述第一导电衬垫，以及其中所述第二焊料结构将所述无焊料金属芯结构的所述第二部分电学及机械地连接到所述第二导电衬垫；
其中所述互连结构包括第三焊料结构，其中所述无焊料金属芯结构包括第一无焊料金属芯和第二无焊料金属芯，其中所述第三焊料结构使所述第一无焊料金属芯电学及机械地附接到所述第二无焊料金属芯，其中所述无焊料金属芯结构的所述第一部分位于所述第一无焊料金属芯上，以及其中所述无焊料金属芯结构的所述第二部分位于所述第二无焊料金属芯上，以及
其中所述第一焊料结构包含第一焊料材料，其中所述第二焊料结构包含第二焊料材料，并且其中所述第一焊料材料不同于所述第二焊料材料。
2.根据权利要求1的电学结构，其中所述无焊料金属芯结构具有圆柱形状。
3.根据权利要求1的电学结构，其中所述无焊料金属芯结构具有球体形状。
4.根据权利要求1的电学结构，其中所述无焊料金属芯结构包含选自铜、镍和金的金属材料。
5.根据权利要求1的电学结构，其中所述无焊料金属芯结构包括第一金属结构和覆盖所述第一金属结构的整个外表面并与之直接机械接触的第二金属结构，其中所述整个外表面完全包围所述第一金属结构，以及其中所述第一金属结构包含第一金属材料，并且其中所述第二金属结构包含不同于第一金属材料的第二金属材料。
6.根据权利要求1的电学结构，其中所述第三焊料结构包含第三焊料材料，并且其中所述第三焊料材料不同于所述第一焊料材料和所述第二焊料材料。
7.根据权利要求1的电学结构，还包括：
包围所述第一无焊料金属芯并与所述第一衬底接触的第一层底充密封剂；以及
包围所述第二无焊料金属芯并与所述第二衬底接触的第二层底充密封剂，其中所述第一层具有第一热膨胀系数，其中所述第二层具有第二热膨胀系数，并且其中所述第一热膨胀系数不同于所述第二热膨胀系数。
8.根据权利要求7的电学结构，其中所述第一衬底是半导体器件，其中所述第二衬底是芯片载体，并且其中所述第一热膨胀系数小于所述第二热膨胀系数。
9.根据权利要求1的电学结构，还包括：
包含焊料的焊料互连结构，其中所述第一衬底包括第三导电衬垫，其中所述第二衬底包括第四导电衬垫，以及其中所述焊料互连结构将所述第三导电衬垫电学及机械地连接到所述第四导电衬垫。
10.根据权利要求1的电学结构，还包括：
包围所述第一无焊料金属芯并且填充所述第一衬底与所述第二衬底之间的空间的第一层晶片级底充密封剂。
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