JP6013705B2 - 部分パット上にバンプを有するフリップチップ相互接続構造を形成する半導体デバイスおよびその方法 - Google Patents
部分パット上にバンプを有するフリップチップ相互接続構造を形成する半導体デバイスおよびその方法 Download PDFInfo
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- JP6013705B2 JP6013705B2 JP2011011427A JP2011011427A JP6013705B2 JP 6013705 B2 JP6013705 B2 JP 6013705B2 JP 2011011427 A JP2011011427 A JP 2011011427A JP 2011011427 A JP2011011427 A JP 2011011427A JP 6013705 B2 JP6013705 B2 JP 6013705B2
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- semiconductor die
- solder
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
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- H05K3/341—Surface mounted components
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/813,335 | 2010-06-10 | ||
| US12/813,335 US9125332B2 (en) | 2008-03-25 | 2010-06-10 | Filp chip interconnection structure with bump on partial pad and method thereof |
| US12/969,451 | 2010-12-15 | ||
| US12/969,451 US9345148B2 (en) | 2008-03-25 | 2010-12-15 | Semiconductor device and method of forming flipchip interconnection structure with bump on partial pad |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011258921A JP2011258921A (ja) | 2011-12-22 |
| JP2011258921A5 JP2011258921A5 (https=) | 2014-10-02 |
| JP6013705B2 true JP6013705B2 (ja) | 2016-10-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
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| JP (1) | JP6013705B2 (https=) |
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Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9220590B2 (en) | 2010-06-10 | 2015-12-29 | Z Lens, Llc | Accommodative intraocular lens and method of improving accommodation |
| US20120286416A1 (en) * | 2011-05-11 | 2012-11-15 | Tessera Research Llc | Semiconductor chip package assembly and method for making same |
| US10833033B2 (en) * | 2011-07-27 | 2020-11-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Bump structure having a side recess and semiconductor structure including the same |
| TWI455264B (zh) * | 2012-02-04 | 2014-10-01 | 隆達電子股份有限公司 | 晶片接合結構及晶片接合的方法 |
| US9364318B2 (en) | 2012-05-10 | 2016-06-14 | Z Lens, Llc | Accommodative-disaccommodative intraocular lens |
| TWI562295B (en) | 2012-07-31 | 2016-12-11 | Mediatek Inc | Semiconductor package and method for fabricating base for semiconductor package |
| FR2994331B1 (fr) * | 2012-07-31 | 2014-09-12 | Commissariat Energie Atomique | Procede d'assemblage de deux composants electroniques entre eux, de type flip-chip |
| US10991669B2 (en) | 2012-07-31 | 2021-04-27 | Mediatek Inc. | Semiconductor package using flip-chip technology |
| KR20140019173A (ko) * | 2012-08-06 | 2014-02-14 | 삼성전기주식회사 | 솔더 코팅볼을 이용한 패키징 방법 및 이에 따라 제조된 패키지 |
| US20140124254A1 (en) * | 2012-11-05 | 2014-05-08 | Nvidia Corporation | Non-solder mask defined copper pad and embedded copper pad to reduce packaging system height |
| WO2014194025A1 (en) * | 2013-05-29 | 2014-12-04 | Cavendish Kinetics, Inc | Techniques for chip scale packaging without solder mask |
| US20150187719A1 (en) | 2013-12-30 | 2015-07-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Trace Design for Bump-on-Trace (BOT) Assembly |
| DE102015105752B4 (de) * | 2015-04-15 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiteranordnung mit Reservoir für Markermaterial |
| US9947631B2 (en) * | 2015-10-14 | 2018-04-17 | Intel Corporation | Surface finishes for interconnection pads in microelectronic structures |
| JP6704175B2 (ja) * | 2016-01-27 | 2020-06-03 | パナソニックIpマネジメント株式会社 | Ledモジュール及びそれを用いた照明器具 |
| DE102016103585B4 (de) * | 2016-02-29 | 2022-01-13 | Infineon Technologies Ag | Verfahren zum Herstellen eines Package mit lötbarem elektrischen Kontakt |
| EP3503843B1 (en) | 2016-08-24 | 2023-11-15 | Carl Zeiss Meditec AG | Dual mode accommodative-disacommodative intraocular lens |
| US20180166419A1 (en) * | 2016-12-12 | 2018-06-14 | Nanya Technology Corporation | Semiconductor package |
| US10162141B1 (en) | 2018-03-28 | 2018-12-25 | Dow Global Technologies Llc | Flooding composition with polysiloxane |
| US10150868B1 (en) | 2018-03-28 | 2018-12-11 | Dow Global Technologies Llc | Flooding composition with polysiloxane |
| TWI689052B (zh) * | 2019-03-15 | 2020-03-21 | 鴻海精密工業股份有限公司 | 半導體封裝結構及其製造方法 |
| US11257694B2 (en) * | 2020-02-04 | 2022-02-22 | Nanya Technology Corporation | Semiconductor device having hybrid bonding interface, method of manufacturing the semiconductor device, and method of manufacturing semiconductor device assembly |
| US11276659B2 (en) | 2020-02-28 | 2022-03-15 | Micron Technology, Inc. | Methods for forming elements for microelectronic components, related conductive elements, and microelectronic components, assemblies and electronic systems incorporating such conductive elements |
| KR102883707B1 (ko) | 2020-07-10 | 2025-11-10 | 삼성전자주식회사 | 반도체 패키지 및 반도체 패키지의 제조 방법 |
| TWI753645B (zh) * | 2020-11-12 | 2022-01-21 | 錼創顯示科技股份有限公司 | 微型發光二極體顯示器及其修補方法 |
| KR20230020829A (ko) | 2021-08-04 | 2023-02-13 | 삼성전자주식회사 | 도전 패드를 포함하는 인쇄회로기판 및 이를 이용한 전자 장치 |
| US20230073823A1 (en) * | 2021-09-09 | 2023-03-09 | Qualcomm Incorporated | Package comprising a substrate with high-density interconnects |
| US12354988B2 (en) | 2022-05-16 | 2025-07-08 | Northrop Grumman Systems Corporation | Bump structures for low temperature chip bonding |
| EP4614570A4 (en) * | 2023-05-12 | 2026-04-08 | Samsung Electronics Co Ltd | DISPLAY DEVICE PRESENTING A DISPLAY MODULE AND ITS MANUFACTURING METHOD |
| TWI896094B (zh) * | 2024-04-23 | 2025-09-01 | 復盛精密工業股份有限公司 | 結合線路的預成型導電柱結構及其製作方法 |
Family Cites Families (115)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04355933A (ja) | 1991-02-07 | 1992-12-09 | Nitto Denko Corp | フリツプチツプの実装構造 |
| JP2678958B2 (ja) | 1992-03-02 | 1997-11-19 | カシオ計算機株式会社 | フィルム配線基板およびその製造方法 |
| US5314651A (en) | 1992-05-29 | 1994-05-24 | Texas Instruments Incorporated | Fine-grain pyroelectric detector material and method |
| US5386624A (en) | 1993-07-06 | 1995-02-07 | Motorola, Inc. | Method for underencapsulating components on circuit supporting substrates |
| US5508561A (en) | 1993-11-15 | 1996-04-16 | Nec Corporation | Apparatus for forming a double-bump structure used for flip-chip mounting |
| US5519580A (en) | 1994-09-09 | 1996-05-21 | Intel Corporation | Method of controlling solder ball size of BGA IC components |
| JP3353508B2 (ja) | 1994-12-20 | 2002-12-03 | ソニー株式会社 | プリント配線板とこれを用いた電子装置 |
| US5650595A (en) | 1995-05-25 | 1997-07-22 | International Business Machines Corporation | Electronic module with multiple solder dams in soldermask window |
| JPH08340173A (ja) | 1995-06-12 | 1996-12-24 | Ibiden Co Ltd | プリント配線板 |
| US5710071A (en) | 1995-12-04 | 1998-01-20 | Motorola, Inc. | Process for underfilling a flip-chip semiconductor device |
| KR0182073B1 (ko) | 1995-12-22 | 1999-03-20 | 황인길 | 반도체 칩 스케일 반도체 패키지 및 그 제조방법 |
| US5889326A (en) | 1996-02-27 | 1999-03-30 | Nec Corporation | Structure for bonding semiconductor device to substrate |
| JPH09260552A (ja) | 1996-03-22 | 1997-10-03 | Nec Corp | 半導体チップの実装構造 |
| KR100216839B1 (ko) | 1996-04-01 | 1999-09-01 | 김규현 | Bga 반도체 패키지의 솔더 볼 랜드 메탈 구조 |
| JPH1051118A (ja) * | 1996-07-30 | 1998-02-20 | Ibiden Co Ltd | プリント配線板 |
| JP3500032B2 (ja) | 1997-03-13 | 2004-02-23 | 日本特殊陶業株式会社 | 配線基板及びその製造方法 |
| JP3346263B2 (ja) | 1997-04-11 | 2002-11-18 | イビデン株式会社 | プリント配線板及びその製造方法 |
| DE69835747T2 (de) | 1997-06-26 | 2007-09-13 | Hitachi Chemical Co., Ltd. | Substrat zur montage von halbleiterchips |
| JPH1126919A (ja) | 1997-06-30 | 1999-01-29 | Fuji Photo Film Co Ltd | プリント配線板 |
| JP2001510944A (ja) | 1997-07-21 | 2001-08-07 | アギラ テクノロジーズ インコーポレイテッド | 半導体フリップチップ・パッケージおよびその製造方法 |
| US6335571B1 (en) | 1997-07-21 | 2002-01-01 | Miguel Albert Capote | Semiconductor flip-chip package and method for the fabrication thereof |
| US5985456A (en) | 1997-07-21 | 1999-11-16 | Miguel Albert Capote | Carboxyl-containing polyunsaturated fluxing adhesive for attaching integrated circuits |
| US6448665B1 (en) | 1997-10-15 | 2002-09-10 | Kabushiki Kaisha Toshiba | Semiconductor package and manufacturing method thereof |
| JP3424526B2 (ja) | 1997-10-23 | 2003-07-07 | 松下電器産業株式会社 | 電子部品の実装方法 |
| US6157079A (en) | 1997-11-10 | 2000-12-05 | Citizen Watch Co., Ltd | Semiconductor device with a bump including a bump electrode film covering a projecting photoresist |
| JP3819576B2 (ja) | 1997-12-25 | 2006-09-13 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
| US5977632A (en) * | 1998-02-02 | 1999-11-02 | Motorola, Inc. | Flip chip bump structure and method of making |
| US6324754B1 (en) | 1998-03-25 | 2001-12-04 | Tessera, Inc. | Method for fabricating microelectronic assemblies |
| US6329605B1 (en) | 1998-03-26 | 2001-12-11 | Tessera, Inc. | Components with conductive solder mask layers |
| JP2000031204A (ja) | 1998-07-07 | 2000-01-28 | Ricoh Co Ltd | 半導体パッケージの製造方法 |
| JP2000133672A (ja) | 1998-10-28 | 2000-05-12 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
| JP3346320B2 (ja) | 1999-02-03 | 2002-11-18 | カシオ計算機株式会社 | 半導体装置及びその製造方法 |
| JP2001068836A (ja) | 1999-08-27 | 2001-03-16 | Mitsubishi Electric Corp | プリント配線基板及び半導体モジュール並びに半導体モジュールの製造方法 |
| US6365977B1 (en) * | 1999-08-31 | 2002-04-02 | International Business Machines Corporation | Insulating interposer between two electronic components and process thereof |
| TW429492B (en) | 1999-10-21 | 2001-04-11 | Siliconware Precision Industries Co Ltd | Ball grid array package and its fabricating method |
| US6774474B1 (en) | 1999-11-10 | 2004-08-10 | International Business Machines Corporation | Partially captured oriented interconnections for BGA packages and a method of forming the interconnections |
| US6787918B1 (en) | 2000-06-02 | 2004-09-07 | Siliconware Precision Industries Co., Ltd. | Substrate structure of flip chip package |
| US6573610B1 (en) * | 2000-06-02 | 2003-06-03 | Siliconware Precision Industries Co., Ltd. | Substrate of semiconductor package for flip chip package |
| US6201305B1 (en) | 2000-06-09 | 2001-03-13 | Amkor Technology, Inc. | Making solder ball mounting pads on substrates |
| JP3554533B2 (ja) | 2000-10-13 | 2004-08-18 | シャープ株式会社 | チップオンフィルム用テープおよび半導体装置 |
| US8158508B2 (en) | 2001-03-05 | 2012-04-17 | Megica Corporation | Structure and manufacturing method of a chip scale package |
| US7242099B2 (en) | 2001-03-05 | 2007-07-10 | Megica Corporation | Chip package with multiple chips connected by bumps |
| US6818545B2 (en) | 2001-03-05 | 2004-11-16 | Megic Corporation | Low fabrication cost, fine pitch and high reliability solder bump |
| TW507341B (en) | 2001-11-01 | 2002-10-21 | Siliconware Precision Industries Co Ltd | Substrate capable of preventing delamination of chip and semiconductor encapsulation having such a substrate |
| US6870276B1 (en) | 2001-12-26 | 2005-03-22 | Micron Technology, Inc. | Apparatus for supporting microelectronic substrates |
| US6636313B2 (en) | 2002-01-12 | 2003-10-21 | Taiwan Semiconductor Manufacturing Co. Ltd | Method of measuring photoresist and bump misalignment |
| US6756294B1 (en) * | 2002-01-30 | 2004-06-29 | Taiwan Semiconductor Manufacturing Company | Method for improving bump reliability for flip chip devices |
| JP2003273145A (ja) | 2002-03-12 | 2003-09-26 | Sharp Corp | 半導体装置 |
| US6780673B2 (en) | 2002-06-12 | 2004-08-24 | Texas Instruments Incorporated | Method of forming a semiconductor device package using a plate layer surrounding contact pads |
| US6762503B2 (en) * | 2002-08-29 | 2004-07-13 | Micron Technology, Inc. | Innovative solder ball pad structure to ease design rule, methods of fabricating same and substrates, electronic device assemblies and systems employing same |
| JP2004095923A (ja) | 2002-09-02 | 2004-03-25 | Murata Mfg Co Ltd | 実装基板およびこの実装基板を用いた電子デバイス |
| JP2004111676A (ja) | 2002-09-19 | 2004-04-08 | Toshiba Corp | 半導体装置、半導体パッケージ用部材、半導体装置の製造方法 |
| US7173342B2 (en) | 2002-12-17 | 2007-02-06 | Intel Corporation | Method and apparatus for reducing electrical interconnection fatigue |
| JP4114483B2 (ja) | 2003-01-10 | 2008-07-09 | セイコーエプソン株式会社 | 半導体チップの実装方法、半導体実装基板、電子デバイスおよび電子機器 |
| US6774497B1 (en) | 2003-03-28 | 2004-08-10 | Freescale Semiconductor, Inc. | Flip-chip assembly with thin underfill and thick solder mask |
| US20040232562A1 (en) | 2003-05-23 | 2004-11-25 | Texas Instruments Incorporated | System and method for increasing bump pad height |
| US6888255B2 (en) | 2003-05-30 | 2005-05-03 | Texas Instruments Incorporated | Built-up bump pad structure and method for same |
| US6849944B2 (en) | 2003-05-30 | 2005-02-01 | Texas Instruments Incorporated | Using a supporting structure to control collapse of a die towards a die pad during a reflow process for coupling the die to the die pad |
| TW572361U (en) | 2003-06-03 | 2004-01-11 | Via Tech Inc | Flip-chip package carrier |
| TWI227556B (en) | 2003-07-15 | 2005-02-01 | Advanced Semiconductor Eng | Chip structure |
| TWI241702B (en) | 2003-07-28 | 2005-10-11 | Siliconware Precision Industries Co Ltd | Ground pad structure for preventing solder extrusion and semiconductor package having the ground pad structure |
| KR100523330B1 (ko) | 2003-07-29 | 2005-10-24 | 삼성전자주식회사 | Smd 및 nsmd 복합형 솔더볼 랜드 구조를 가지는bga 반도체 패키지 |
| US6790759B1 (en) * | 2003-07-31 | 2004-09-14 | Freescale Semiconductor, Inc. | Semiconductor device with strain relieving bump design |
| TWI234258B (en) | 2003-08-01 | 2005-06-11 | Advanced Semiconductor Eng | Substrate with reinforced structure of contact pad |
| TWI241675B (en) | 2003-08-18 | 2005-10-11 | Siliconware Precision Industries Co Ltd | Chip carrier for semiconductor chip |
| KR100541394B1 (ko) | 2003-08-23 | 2006-01-10 | 삼성전자주식회사 | 비한정형 볼 그리드 어레이 패키지용 배선기판 및 그의제조 방법 |
| JP2005079211A (ja) | 2003-08-29 | 2005-03-24 | Nippon Avionics Co Ltd | 超音波フリップチップ実装方法 |
| US7271484B2 (en) | 2003-09-25 | 2007-09-18 | Infineon Technologies Ag | Substrate for producing a soldering connection |
| JP2005109187A (ja) | 2003-09-30 | 2005-04-21 | Tdk Corp | フリップチップ実装回路基板およびその製造方法ならびに集積回路装置 |
| JP3877717B2 (ja) | 2003-09-30 | 2007-02-07 | 三洋電機株式会社 | 半導体装置およびその製造方法 |
| TWI534915B (zh) * | 2003-11-10 | 2016-05-21 | 恰巴克有限公司 | 引線上凸塊之倒裝晶片互連 |
| US7294929B2 (en) | 2003-12-30 | 2007-11-13 | Texas Instruments Incorporated | Solder ball pad structure |
| JP4605155B2 (ja) | 2004-03-29 | 2011-01-05 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP4024773B2 (ja) | 2004-03-30 | 2007-12-19 | シャープ株式会社 | 配線基板、半導体装置およびその製造方法並びに半導体モジュール装置 |
| TWI240389B (en) | 2004-05-06 | 2005-09-21 | Advanced Semiconductor Eng | High-density layout substrate for flip-chip package |
| US7224073B2 (en) | 2004-05-18 | 2007-05-29 | Ultratera Corporation | Substrate for solder joint |
| US7057284B2 (en) | 2004-08-12 | 2006-06-06 | Texas Instruments Incorporated | Fine pitch low-cost flip chip substrate |
| JP2006108313A (ja) | 2004-10-04 | 2006-04-20 | Rohm Co Ltd | 実装基板および半導体装置 |
| US20060131758A1 (en) | 2004-12-22 | 2006-06-22 | Stmicroelectronics, Inc. | Anchored non-solder mask defined ball pad |
| JP2008535225A (ja) | 2005-03-25 | 2008-08-28 | スタッツ チップパック リミテッド | 基板上に狭い配線部分を有するフリップチップ配線 |
| JP2007005452A (ja) | 2005-06-22 | 2007-01-11 | Renesas Technology Corp | 半導体装置 |
| EP1887845A4 (en) | 2005-06-30 | 2010-08-11 | Ibiden Co Ltd | CIRCUIT BOARD |
| JP4971769B2 (ja) | 2005-12-22 | 2012-07-11 | 新光電気工業株式会社 | フリップチップ実装構造及びフリップチップ実装構造の製造方法 |
| JP2007184381A (ja) | 2006-01-06 | 2007-07-19 | Matsushita Electric Ind Co Ltd | フリップチップ実装用回路基板とその製造方法、並びに半導体装置とその製造方法 |
| TWI286830B (en) | 2006-01-16 | 2007-09-11 | Siliconware Precision Industries Co Ltd | Electronic carrier board |
| TWI294682B (en) | 2006-02-03 | 2008-03-11 | Siliconware Precision Industries Co Ltd | Semiconductor package substrate |
| US20070200234A1 (en) | 2006-02-28 | 2007-08-30 | Texas Instruments Incorporated | Flip-Chip Device Having Underfill in Controlled Gap |
| US7317245B1 (en) | 2006-04-07 | 2008-01-08 | Amkor Technology, Inc. | Method for manufacturing a semiconductor device substrate |
| JP2007305881A (ja) | 2006-05-12 | 2007-11-22 | Sharp Corp | テープキャリアおよび半導体装置並びに半導体モジュール装置 |
| US7902660B1 (en) | 2006-05-24 | 2011-03-08 | Amkor Technology, Inc. | Substrate for semiconductor device and manufacturing method thereof |
| US8581380B2 (en) | 2006-07-10 | 2013-11-12 | Stats Chippac Ltd. | Integrated circuit packaging system with ultra-thin die |
| US7652374B2 (en) | 2006-07-31 | 2010-01-26 | Chi Wah Kok | Substrate and process for semiconductor flip chip package |
| US20080093749A1 (en) | 2006-10-20 | 2008-04-24 | Texas Instruments Incorporated | Partial Solder Mask Defined Pad Design |
| TWI331388B (en) | 2007-01-25 | 2010-10-01 | Advanced Semiconductor Eng | Package substrate, method of fabricating the same and chip package |
| JP4618260B2 (ja) | 2007-02-21 | 2011-01-26 | 日本テキサス・インスツルメンツ株式会社 | 導体パターンの形成方法、半導体装置の製造方法、並びに半導体装置 |
| US7521284B2 (en) | 2007-03-05 | 2009-04-21 | Texas Instruments Incorporated | System and method for increased stand-off height in stud bumping process |
| TWI361482B (en) | 2007-05-10 | 2012-04-01 | Siliconware Precision Industries Co Ltd | Flip-chip semiconductor package structure and package substrate applicable thereto |
| TWI357137B (en) | 2007-10-19 | 2012-01-21 | Advanced Semiconductor Eng | Flip chip package structure and carrier thereof |
| TWI358113B (en) | 2007-10-31 | 2012-02-11 | Advanced Semiconductor Eng | Substrate structure and semiconductor package usin |
| TW200921868A (en) | 2007-11-07 | 2009-05-16 | Advanced Semiconductor Eng | Substrate structure |
| US7847399B2 (en) | 2007-12-07 | 2010-12-07 | Texas Instruments Incorporated | Semiconductor device having solder-free gold bump contacts for stability in repeated temperature cycles |
| JP5107012B2 (ja) | 2007-12-12 | 2012-12-26 | 新光電気工業株式会社 | 配線基板及び電子部品の実装構造の製造方法 |
| KR20090080623A (ko) | 2008-01-22 | 2009-07-27 | 삼성전기주식회사 | 포스트 범프 및 그 형성방법 |
| TWI340615B (en) | 2008-01-30 | 2011-04-11 | Advanced Semiconductor Eng | Surface treatment process for circuit board |
| KR101407614B1 (ko) | 2008-01-30 | 2014-06-13 | 삼성전자주식회사 | 인쇄회로기판, 반도체 패키지, 카드 및 시스템 |
| JP5053919B2 (ja) * | 2008-03-07 | 2012-10-24 | パナソニック株式会社 | 表面実装デバイスの実装構造体 |
| US7670939B2 (en) | 2008-05-12 | 2010-03-02 | Ati Technologies Ulc | Semiconductor chip bump connection apparatus and method |
| US7851928B2 (en) | 2008-06-10 | 2010-12-14 | Texas Instruments Incorporated | Semiconductor device having substrate with differentially plated copper and selective solder |
| TWI425896B (zh) | 2008-06-11 | 2014-02-01 | 日月光半導體製造股份有限公司 | 具有內埋式導電線路之電路板及其製造方法 |
| US7932170B1 (en) | 2008-06-23 | 2011-04-26 | Amkor Technology, Inc. | Flip chip bump structure and fabrication method |
| US7790509B2 (en) | 2008-06-27 | 2010-09-07 | Texas Instruments Incorporated | Method for fine-pitch, low stress flip-chip interconnect |
| JP5253041B2 (ja) | 2008-08-22 | 2013-07-31 | 東洋電機製造株式会社 | マトリックスコンバータ制御装置 |
| TWI384600B (zh) | 2008-12-09 | 2013-02-01 | 日月光半導體製造股份有限公司 | 內埋線路基板及其製造方法 |
| US7898083B2 (en) | 2008-12-17 | 2011-03-01 | Texas Instruments Incorporated | Method for low stress flip-chip assembly of fine-pitch semiconductor devices |
| US20110049703A1 (en) | 2009-08-25 | 2011-03-03 | Jun-Chung Hsu | Flip-Chip Package Structure |
-
2010
- 2010-12-15 US US12/969,451 patent/US9345148B2/en active Active
-
2011
- 2011-01-21 JP JP2011011427A patent/JP6013705B2/ja active Active
- 2011-01-24 TW TW100102448A patent/TWI539540B/zh active
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| JP2011258921A (ja) | 2011-12-22 |
| KR20110135329A (ko) | 2011-12-16 |
| KR101921332B1 (ko) | 2018-11-22 |
| TW201145419A (en) | 2011-12-16 |
| TWI539540B (zh) | 2016-06-21 |
| US9345148B2 (en) | 2016-05-17 |
| US20110304058A1 (en) | 2011-12-15 |
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