JP6013705B2 - 部分パット上にバンプを有するフリップチップ相互接続構造を形成する半導体デバイスおよびその方法 - Google Patents

部分パット上にバンプを有するフリップチップ相互接続構造を形成する半導体デバイスおよびその方法 Download PDF

Info

Publication number
JP6013705B2
JP6013705B2 JP2011011427A JP2011011427A JP6013705B2 JP 6013705 B2 JP6013705 B2 JP 6013705B2 JP 2011011427 A JP2011011427 A JP 2011011427A JP 2011011427 A JP2011011427 A JP 2011011427A JP 6013705 B2 JP6013705 B2 JP 6013705B2
Authority
JP
Japan
Prior art keywords
bump
interconnect
substrate
semiconductor die
solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011011427A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011258921A (ja
JP2011258921A5 (https=
Inventor
ディー. ペンズ ラジェンドラ
ディー. ペンズ ラジェンドラ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stats Chippac Pte Ltd
Original Assignee
Stats Chippac Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/813,335 external-priority patent/US9125332B2/en
Application filed by Stats Chippac Pte Ltd filed Critical Stats Chippac Pte Ltd
Publication of JP2011258921A publication Critical patent/JP2011258921A/ja
Publication of JP2011258921A5 publication Critical patent/JP2011258921A5/ja
Application granted granted Critical
Publication of JP6013705B2 publication Critical patent/JP6013705B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3452Solder masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341Surface mounted components
    • H05K3/3431Leadless components
    • H05K3/3436Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/014Manufacture or treatment using batch processing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/016Manufacture or treatment using moulds
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/0989Coating free areas, e.g. areas other than pads or lands free of solder resist
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621Components characterised by their electrical contacts
    • H05K2201/10734Ball grid array [BGA]; Bump grid array
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0005Apparatus or processes for manufacturing printed circuits for designing circuits by computer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01215Manufacture or treatment of bump connectors, dummy bumps or thermal bumps forming coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/012Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251Changing the shapes of bumps
    • H10W72/01257Changing the shapes of bumps by reflowing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/013Manufacture or treatment of die-attach connectors
    • H10W72/01308Manufacture or treatment of die-attach connectors using permanent auxiliary members, e.g. using alignment marks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/0198Manufacture or treatment batch processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07232Compression bonding, e.g. thermocompression bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07231Techniques
    • H10W72/07236Soldering or alloying
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • H10W72/07251Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H10W72/07252Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting changes in structures or sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221Structures or relative sizes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221Structures or relative sizes
    • H10W72/222Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231Shapes
    • H10W72/234Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/231Shapes
    • H10W72/235Shapes of outermost layers of multilayered bumps, e.g. bump coating not being conformal on a bump core
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/245Dispositions, e.g. layouts of outermost layers of multilayered bumps, e.g. bump coating being only on a part of a bump core
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/247Dispositions of multiple bumps
    • H10W72/248Top-view layouts, e.g. mirror arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251Materials
    • H10W72/252Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/381Auxiliary members
    • H10W72/387Flow barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/877Bump connectors and die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/934Cross-sectional shape, i.e. in side view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/012Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/271Configurations of stacked chips the chips having passive surfaces facing each other, i.e. in a back-to-back arrangement
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/725Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a laterally-adjacent insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wire Bonding (AREA)
JP2011011427A 2010-06-10 2011-01-21 部分パット上にバンプを有するフリップチップ相互接続構造を形成する半導体デバイスおよびその方法 Active JP6013705B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/813,335 2010-06-10
US12/813,335 US9125332B2 (en) 2008-03-25 2010-06-10 Filp chip interconnection structure with bump on partial pad and method thereof
US12/969,451 2010-12-15
US12/969,451 US9345148B2 (en) 2008-03-25 2010-12-15 Semiconductor device and method of forming flipchip interconnection structure with bump on partial pad

Publications (3)

Publication Number Publication Date
JP2011258921A JP2011258921A (ja) 2011-12-22
JP2011258921A5 JP2011258921A5 (https=) 2014-10-02
JP6013705B2 true JP6013705B2 (ja) 2016-10-25

Family

ID=45095588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011011427A Active JP6013705B2 (ja) 2010-06-10 2011-01-21 部分パット上にバンプを有するフリップチップ相互接続構造を形成する半導体デバイスおよびその方法

Country Status (4)

Country Link
US (1) US9345148B2 (https=)
JP (1) JP6013705B2 (https=)
KR (1) KR101921332B1 (https=)
TW (1) TWI539540B (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9220590B2 (en) 2010-06-10 2015-12-29 Z Lens, Llc Accommodative intraocular lens and method of improving accommodation
US20120286416A1 (en) * 2011-05-11 2012-11-15 Tessera Research Llc Semiconductor chip package assembly and method for making same
US10833033B2 (en) * 2011-07-27 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bump structure having a side recess and semiconductor structure including the same
TWI455264B (zh) * 2012-02-04 2014-10-01 隆達電子股份有限公司 晶片接合結構及晶片接合的方法
US9364318B2 (en) 2012-05-10 2016-06-14 Z Lens, Llc Accommodative-disaccommodative intraocular lens
TWI562295B (en) 2012-07-31 2016-12-11 Mediatek Inc Semiconductor package and method for fabricating base for semiconductor package
FR2994331B1 (fr) * 2012-07-31 2014-09-12 Commissariat Energie Atomique Procede d'assemblage de deux composants electroniques entre eux, de type flip-chip
US10991669B2 (en) 2012-07-31 2021-04-27 Mediatek Inc. Semiconductor package using flip-chip technology
KR20140019173A (ko) * 2012-08-06 2014-02-14 삼성전기주식회사 솔더 코팅볼을 이용한 패키징 방법 및 이에 따라 제조된 패키지
US20140124254A1 (en) * 2012-11-05 2014-05-08 Nvidia Corporation Non-solder mask defined copper pad and embedded copper pad to reduce packaging system height
WO2014194025A1 (en) * 2013-05-29 2014-12-04 Cavendish Kinetics, Inc Techniques for chip scale packaging without solder mask
US20150187719A1 (en) 2013-12-30 2015-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Trace Design for Bump-on-Trace (BOT) Assembly
DE102015105752B4 (de) * 2015-04-15 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiteranordnung mit Reservoir für Markermaterial
US9947631B2 (en) * 2015-10-14 2018-04-17 Intel Corporation Surface finishes for interconnection pads in microelectronic structures
JP6704175B2 (ja) * 2016-01-27 2020-06-03 パナソニックIpマネジメント株式会社 Ledモジュール及びそれを用いた照明器具
DE102016103585B4 (de) * 2016-02-29 2022-01-13 Infineon Technologies Ag Verfahren zum Herstellen eines Package mit lötbarem elektrischen Kontakt
EP3503843B1 (en) 2016-08-24 2023-11-15 Carl Zeiss Meditec AG Dual mode accommodative-disacommodative intraocular lens
US20180166419A1 (en) * 2016-12-12 2018-06-14 Nanya Technology Corporation Semiconductor package
US10162141B1 (en) 2018-03-28 2018-12-25 Dow Global Technologies Llc Flooding composition with polysiloxane
US10150868B1 (en) 2018-03-28 2018-12-11 Dow Global Technologies Llc Flooding composition with polysiloxane
TWI689052B (zh) * 2019-03-15 2020-03-21 鴻海精密工業股份有限公司 半導體封裝結構及其製造方法
US11257694B2 (en) * 2020-02-04 2022-02-22 Nanya Technology Corporation Semiconductor device having hybrid bonding interface, method of manufacturing the semiconductor device, and method of manufacturing semiconductor device assembly
US11276659B2 (en) 2020-02-28 2022-03-15 Micron Technology, Inc. Methods for forming elements for microelectronic components, related conductive elements, and microelectronic components, assemblies and electronic systems incorporating such conductive elements
KR102883707B1 (ko) 2020-07-10 2025-11-10 삼성전자주식회사 반도체 패키지 및 반도체 패키지의 제조 방법
TWI753645B (zh) * 2020-11-12 2022-01-21 錼創顯示科技股份有限公司 微型發光二極體顯示器及其修補方法
KR20230020829A (ko) 2021-08-04 2023-02-13 삼성전자주식회사 도전 패드를 포함하는 인쇄회로기판 및 이를 이용한 전자 장치
US20230073823A1 (en) * 2021-09-09 2023-03-09 Qualcomm Incorporated Package comprising a substrate with high-density interconnects
US12354988B2 (en) 2022-05-16 2025-07-08 Northrop Grumman Systems Corporation Bump structures for low temperature chip bonding
EP4614570A4 (en) * 2023-05-12 2026-04-08 Samsung Electronics Co Ltd DISPLAY DEVICE PRESENTING A DISPLAY MODULE AND ITS MANUFACTURING METHOD
TWI896094B (zh) * 2024-04-23 2025-09-01 復盛精密工業股份有限公司 結合線路的預成型導電柱結構及其製作方法

Family Cites Families (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04355933A (ja) 1991-02-07 1992-12-09 Nitto Denko Corp フリツプチツプの実装構造
JP2678958B2 (ja) 1992-03-02 1997-11-19 カシオ計算機株式会社 フィルム配線基板およびその製造方法
US5314651A (en) 1992-05-29 1994-05-24 Texas Instruments Incorporated Fine-grain pyroelectric detector material and method
US5386624A (en) 1993-07-06 1995-02-07 Motorola, Inc. Method for underencapsulating components on circuit supporting substrates
US5508561A (en) 1993-11-15 1996-04-16 Nec Corporation Apparatus for forming a double-bump structure used for flip-chip mounting
US5519580A (en) 1994-09-09 1996-05-21 Intel Corporation Method of controlling solder ball size of BGA IC components
JP3353508B2 (ja) 1994-12-20 2002-12-03 ソニー株式会社 プリント配線板とこれを用いた電子装置
US5650595A (en) 1995-05-25 1997-07-22 International Business Machines Corporation Electronic module with multiple solder dams in soldermask window
JPH08340173A (ja) 1995-06-12 1996-12-24 Ibiden Co Ltd プリント配線板
US5710071A (en) 1995-12-04 1998-01-20 Motorola, Inc. Process for underfilling a flip-chip semiconductor device
KR0182073B1 (ko) 1995-12-22 1999-03-20 황인길 반도체 칩 스케일 반도체 패키지 및 그 제조방법
US5889326A (en) 1996-02-27 1999-03-30 Nec Corporation Structure for bonding semiconductor device to substrate
JPH09260552A (ja) 1996-03-22 1997-10-03 Nec Corp 半導体チップの実装構造
KR100216839B1 (ko) 1996-04-01 1999-09-01 김규현 Bga 반도체 패키지의 솔더 볼 랜드 메탈 구조
JPH1051118A (ja) * 1996-07-30 1998-02-20 Ibiden Co Ltd プリント配線板
JP3500032B2 (ja) 1997-03-13 2004-02-23 日本特殊陶業株式会社 配線基板及びその製造方法
JP3346263B2 (ja) 1997-04-11 2002-11-18 イビデン株式会社 プリント配線板及びその製造方法
DE69835747T2 (de) 1997-06-26 2007-09-13 Hitachi Chemical Co., Ltd. Substrat zur montage von halbleiterchips
JPH1126919A (ja) 1997-06-30 1999-01-29 Fuji Photo Film Co Ltd プリント配線板
JP2001510944A (ja) 1997-07-21 2001-08-07 アギラ テクノロジーズ インコーポレイテッド 半導体フリップチップ・パッケージおよびその製造方法
US6335571B1 (en) 1997-07-21 2002-01-01 Miguel Albert Capote Semiconductor flip-chip package and method for the fabrication thereof
US5985456A (en) 1997-07-21 1999-11-16 Miguel Albert Capote Carboxyl-containing polyunsaturated fluxing adhesive for attaching integrated circuits
US6448665B1 (en) 1997-10-15 2002-09-10 Kabushiki Kaisha Toshiba Semiconductor package and manufacturing method thereof
JP3424526B2 (ja) 1997-10-23 2003-07-07 松下電器産業株式会社 電子部品の実装方法
US6157079A (en) 1997-11-10 2000-12-05 Citizen Watch Co., Ltd Semiconductor device with a bump including a bump electrode film covering a projecting photoresist
JP3819576B2 (ja) 1997-12-25 2006-09-13 沖電気工業株式会社 半導体装置及びその製造方法
US5977632A (en) * 1998-02-02 1999-11-02 Motorola, Inc. Flip chip bump structure and method of making
US6324754B1 (en) 1998-03-25 2001-12-04 Tessera, Inc. Method for fabricating microelectronic assemblies
US6329605B1 (en) 1998-03-26 2001-12-11 Tessera, Inc. Components with conductive solder mask layers
JP2000031204A (ja) 1998-07-07 2000-01-28 Ricoh Co Ltd 半導体パッケージの製造方法
JP2000133672A (ja) 1998-10-28 2000-05-12 Seiko Epson Corp 半導体装置及びその製造方法、回路基板並びに電子機器
JP3346320B2 (ja) 1999-02-03 2002-11-18 カシオ計算機株式会社 半導体装置及びその製造方法
JP2001068836A (ja) 1999-08-27 2001-03-16 Mitsubishi Electric Corp プリント配線基板及び半導体モジュール並びに半導体モジュールの製造方法
US6365977B1 (en) * 1999-08-31 2002-04-02 International Business Machines Corporation Insulating interposer between two electronic components and process thereof
TW429492B (en) 1999-10-21 2001-04-11 Siliconware Precision Industries Co Ltd Ball grid array package and its fabricating method
US6774474B1 (en) 1999-11-10 2004-08-10 International Business Machines Corporation Partially captured oriented interconnections for BGA packages and a method of forming the interconnections
US6787918B1 (en) 2000-06-02 2004-09-07 Siliconware Precision Industries Co., Ltd. Substrate structure of flip chip package
US6573610B1 (en) * 2000-06-02 2003-06-03 Siliconware Precision Industries Co., Ltd. Substrate of semiconductor package for flip chip package
US6201305B1 (en) 2000-06-09 2001-03-13 Amkor Technology, Inc. Making solder ball mounting pads on substrates
JP3554533B2 (ja) 2000-10-13 2004-08-18 シャープ株式会社 チップオンフィルム用テープおよび半導体装置
US8158508B2 (en) 2001-03-05 2012-04-17 Megica Corporation Structure and manufacturing method of a chip scale package
US7242099B2 (en) 2001-03-05 2007-07-10 Megica Corporation Chip package with multiple chips connected by bumps
US6818545B2 (en) 2001-03-05 2004-11-16 Megic Corporation Low fabrication cost, fine pitch and high reliability solder bump
TW507341B (en) 2001-11-01 2002-10-21 Siliconware Precision Industries Co Ltd Substrate capable of preventing delamination of chip and semiconductor encapsulation having such a substrate
US6870276B1 (en) 2001-12-26 2005-03-22 Micron Technology, Inc. Apparatus for supporting microelectronic substrates
US6636313B2 (en) 2002-01-12 2003-10-21 Taiwan Semiconductor Manufacturing Co. Ltd Method of measuring photoresist and bump misalignment
US6756294B1 (en) * 2002-01-30 2004-06-29 Taiwan Semiconductor Manufacturing Company Method for improving bump reliability for flip chip devices
JP2003273145A (ja) 2002-03-12 2003-09-26 Sharp Corp 半導体装置
US6780673B2 (en) 2002-06-12 2004-08-24 Texas Instruments Incorporated Method of forming a semiconductor device package using a plate layer surrounding contact pads
US6762503B2 (en) * 2002-08-29 2004-07-13 Micron Technology, Inc. Innovative solder ball pad structure to ease design rule, methods of fabricating same and substrates, electronic device assemblies and systems employing same
JP2004095923A (ja) 2002-09-02 2004-03-25 Murata Mfg Co Ltd 実装基板およびこの実装基板を用いた電子デバイス
JP2004111676A (ja) 2002-09-19 2004-04-08 Toshiba Corp 半導体装置、半導体パッケージ用部材、半導体装置の製造方法
US7173342B2 (en) 2002-12-17 2007-02-06 Intel Corporation Method and apparatus for reducing electrical interconnection fatigue
JP4114483B2 (ja) 2003-01-10 2008-07-09 セイコーエプソン株式会社 半導体チップの実装方法、半導体実装基板、電子デバイスおよび電子機器
US6774497B1 (en) 2003-03-28 2004-08-10 Freescale Semiconductor, Inc. Flip-chip assembly with thin underfill and thick solder mask
US20040232562A1 (en) 2003-05-23 2004-11-25 Texas Instruments Incorporated System and method for increasing bump pad height
US6888255B2 (en) 2003-05-30 2005-05-03 Texas Instruments Incorporated Built-up bump pad structure and method for same
US6849944B2 (en) 2003-05-30 2005-02-01 Texas Instruments Incorporated Using a supporting structure to control collapse of a die towards a die pad during a reflow process for coupling the die to the die pad
TW572361U (en) 2003-06-03 2004-01-11 Via Tech Inc Flip-chip package carrier
TWI227556B (en) 2003-07-15 2005-02-01 Advanced Semiconductor Eng Chip structure
TWI241702B (en) 2003-07-28 2005-10-11 Siliconware Precision Industries Co Ltd Ground pad structure for preventing solder extrusion and semiconductor package having the ground pad structure
KR100523330B1 (ko) 2003-07-29 2005-10-24 삼성전자주식회사 Smd 및 nsmd 복합형 솔더볼 랜드 구조를 가지는bga 반도체 패키지
US6790759B1 (en) * 2003-07-31 2004-09-14 Freescale Semiconductor, Inc. Semiconductor device with strain relieving bump design
TWI234258B (en) 2003-08-01 2005-06-11 Advanced Semiconductor Eng Substrate with reinforced structure of contact pad
TWI241675B (en) 2003-08-18 2005-10-11 Siliconware Precision Industries Co Ltd Chip carrier for semiconductor chip
KR100541394B1 (ko) 2003-08-23 2006-01-10 삼성전자주식회사 비한정형 볼 그리드 어레이 패키지용 배선기판 및 그의제조 방법
JP2005079211A (ja) 2003-08-29 2005-03-24 Nippon Avionics Co Ltd 超音波フリップチップ実装方法
US7271484B2 (en) 2003-09-25 2007-09-18 Infineon Technologies Ag Substrate for producing a soldering connection
JP2005109187A (ja) 2003-09-30 2005-04-21 Tdk Corp フリップチップ実装回路基板およびその製造方法ならびに集積回路装置
JP3877717B2 (ja) 2003-09-30 2007-02-07 三洋電機株式会社 半導体装置およびその製造方法
TWI534915B (zh) * 2003-11-10 2016-05-21 恰巴克有限公司 引線上凸塊之倒裝晶片互連
US7294929B2 (en) 2003-12-30 2007-11-13 Texas Instruments Incorporated Solder ball pad structure
JP4605155B2 (ja) 2004-03-29 2011-01-05 日本電気株式会社 半導体装置及びその製造方法
JP4024773B2 (ja) 2004-03-30 2007-12-19 シャープ株式会社 配線基板、半導体装置およびその製造方法並びに半導体モジュール装置
TWI240389B (en) 2004-05-06 2005-09-21 Advanced Semiconductor Eng High-density layout substrate for flip-chip package
US7224073B2 (en) 2004-05-18 2007-05-29 Ultratera Corporation Substrate for solder joint
US7057284B2 (en) 2004-08-12 2006-06-06 Texas Instruments Incorporated Fine pitch low-cost flip chip substrate
JP2006108313A (ja) 2004-10-04 2006-04-20 Rohm Co Ltd 実装基板および半導体装置
US20060131758A1 (en) 2004-12-22 2006-06-22 Stmicroelectronics, Inc. Anchored non-solder mask defined ball pad
JP2008535225A (ja) 2005-03-25 2008-08-28 スタッツ チップパック リミテッド 基板上に狭い配線部分を有するフリップチップ配線
JP2007005452A (ja) 2005-06-22 2007-01-11 Renesas Technology Corp 半導体装置
EP1887845A4 (en) 2005-06-30 2010-08-11 Ibiden Co Ltd CIRCUIT BOARD
JP4971769B2 (ja) 2005-12-22 2012-07-11 新光電気工業株式会社 フリップチップ実装構造及びフリップチップ実装構造の製造方法
JP2007184381A (ja) 2006-01-06 2007-07-19 Matsushita Electric Ind Co Ltd フリップチップ実装用回路基板とその製造方法、並びに半導体装置とその製造方法
TWI286830B (en) 2006-01-16 2007-09-11 Siliconware Precision Industries Co Ltd Electronic carrier board
TWI294682B (en) 2006-02-03 2008-03-11 Siliconware Precision Industries Co Ltd Semiconductor package substrate
US20070200234A1 (en) 2006-02-28 2007-08-30 Texas Instruments Incorporated Flip-Chip Device Having Underfill in Controlled Gap
US7317245B1 (en) 2006-04-07 2008-01-08 Amkor Technology, Inc. Method for manufacturing a semiconductor device substrate
JP2007305881A (ja) 2006-05-12 2007-11-22 Sharp Corp テープキャリアおよび半導体装置並びに半導体モジュール装置
US7902660B1 (en) 2006-05-24 2011-03-08 Amkor Technology, Inc. Substrate for semiconductor device and manufacturing method thereof
US8581380B2 (en) 2006-07-10 2013-11-12 Stats Chippac Ltd. Integrated circuit packaging system with ultra-thin die
US7652374B2 (en) 2006-07-31 2010-01-26 Chi Wah Kok Substrate and process for semiconductor flip chip package
US20080093749A1 (en) 2006-10-20 2008-04-24 Texas Instruments Incorporated Partial Solder Mask Defined Pad Design
TWI331388B (en) 2007-01-25 2010-10-01 Advanced Semiconductor Eng Package substrate, method of fabricating the same and chip package
JP4618260B2 (ja) 2007-02-21 2011-01-26 日本テキサス・インスツルメンツ株式会社 導体パターンの形成方法、半導体装置の製造方法、並びに半導体装置
US7521284B2 (en) 2007-03-05 2009-04-21 Texas Instruments Incorporated System and method for increased stand-off height in stud bumping process
TWI361482B (en) 2007-05-10 2012-04-01 Siliconware Precision Industries Co Ltd Flip-chip semiconductor package structure and package substrate applicable thereto
TWI357137B (en) 2007-10-19 2012-01-21 Advanced Semiconductor Eng Flip chip package structure and carrier thereof
TWI358113B (en) 2007-10-31 2012-02-11 Advanced Semiconductor Eng Substrate structure and semiconductor package usin
TW200921868A (en) 2007-11-07 2009-05-16 Advanced Semiconductor Eng Substrate structure
US7847399B2 (en) 2007-12-07 2010-12-07 Texas Instruments Incorporated Semiconductor device having solder-free gold bump contacts for stability in repeated temperature cycles
JP5107012B2 (ja) 2007-12-12 2012-12-26 新光電気工業株式会社 配線基板及び電子部品の実装構造の製造方法
KR20090080623A (ko) 2008-01-22 2009-07-27 삼성전기주식회사 포스트 범프 및 그 형성방법
TWI340615B (en) 2008-01-30 2011-04-11 Advanced Semiconductor Eng Surface treatment process for circuit board
KR101407614B1 (ko) 2008-01-30 2014-06-13 삼성전자주식회사 인쇄회로기판, 반도체 패키지, 카드 및 시스템
JP5053919B2 (ja) * 2008-03-07 2012-10-24 パナソニック株式会社 表面実装デバイスの実装構造体
US7670939B2 (en) 2008-05-12 2010-03-02 Ati Technologies Ulc Semiconductor chip bump connection apparatus and method
US7851928B2 (en) 2008-06-10 2010-12-14 Texas Instruments Incorporated Semiconductor device having substrate with differentially plated copper and selective solder
TWI425896B (zh) 2008-06-11 2014-02-01 日月光半導體製造股份有限公司 具有內埋式導電線路之電路板及其製造方法
US7932170B1 (en) 2008-06-23 2011-04-26 Amkor Technology, Inc. Flip chip bump structure and fabrication method
US7790509B2 (en) 2008-06-27 2010-09-07 Texas Instruments Incorporated Method for fine-pitch, low stress flip-chip interconnect
JP5253041B2 (ja) 2008-08-22 2013-07-31 東洋電機製造株式会社 マトリックスコンバータ制御装置
TWI384600B (zh) 2008-12-09 2013-02-01 日月光半導體製造股份有限公司 內埋線路基板及其製造方法
US7898083B2 (en) 2008-12-17 2011-03-01 Texas Instruments Incorporated Method for low stress flip-chip assembly of fine-pitch semiconductor devices
US20110049703A1 (en) 2009-08-25 2011-03-03 Jun-Chung Hsu Flip-Chip Package Structure

Also Published As

Publication number Publication date
JP2011258921A (ja) 2011-12-22
KR20110135329A (ko) 2011-12-16
KR101921332B1 (ko) 2018-11-22
TW201145419A (en) 2011-12-16
TWI539540B (zh) 2016-06-21
US9345148B2 (en) 2016-05-17
US20110304058A1 (en) 2011-12-15

Similar Documents

Publication Publication Date Title
JP6013705B2 (ja) 部分パット上にバンプを有するフリップチップ相互接続構造を形成する半導体デバイスおよびその方法
JP5952523B2 (ja) 半導体素子およびフリップチップ相互接続構造を形成する方法
US9899286B2 (en) Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
US9679811B2 (en) Semiconductor device and method of confining conductive bump material with solder mask patch
US9385101B2 (en) Semiconductor device and method of forming bump-on-lead interconnection
TWI567864B (zh) 在基板上形成高繞線密度互連位置的半導體裝置及方法
US8349721B2 (en) Semiconductor device and method of forming insulating layer on conductive traces for electrical isolation in fine pitch bonding
JP2012119648A (ja) フリップチップ半導体ダイのパッドレイアウトを形成する半導体素子および方法
US9258904B2 (en) Semiconductor device and method of forming narrow interconnect sites on substrate with elongated mask openings
TWI527178B (zh) 在無焊料遮罩的回焊期間的導電凸塊材料的自我局限的半導體裝置和方法
TWI553775B (zh) 利用焊料遮罩補片局限導電凸塊材料的半導體裝置及方法
TWI498982B (zh) 在以焊料遮罩補綴的回焊期間局限導電凸塊材料的半導體裝置和方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131106

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131106

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140519

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20140818

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150331

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150624

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160301

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160525

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160902

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160923

R150 Certificate of patent or registration of utility model

Ref document number: 6013705

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350