JP5789403B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5789403B2
JP5789403B2 JP2011095085A JP2011095085A JP5789403B2 JP 5789403 B2 JP5789403 B2 JP 5789403B2 JP 2011095085 A JP2011095085 A JP 2011095085A JP 2011095085 A JP2011095085 A JP 2011095085A JP 5789403 B2 JP5789403 B2 JP 5789403B2
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film
oxide semiconductor
insulating film
oxygen
semiconductor film
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JP2011243975A (ja
JP2011243975A5 (enExample
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山崎　舜平
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Dram (AREA)
JP2011095085A 2010-04-23 2011-04-21 半導体装置の作製方法 Active JP5789403B2 (ja)

Priority Applications (1)

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JP2010100237 2010-04-23
JP2010100237 2010-04-23
JP2011095085A JP5789403B2 (ja) 2010-04-23 2011-04-21 半導体装置の作製方法

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JP2011243975A JP2011243975A (ja) 2011-12-01
JP2011243975A5 JP2011243975A5 (enExample) 2014-09-25
JP5789403B2 true JP5789403B2 (ja) 2015-10-07

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JP2015153114A Active JP6028074B2 (ja) 2010-04-23 2015-08-03 半導体装置の作製方法
JP2016203307A Expired - Fee Related JP6209266B2 (ja) 2010-04-23 2016-10-17 半導体装置の作製方法
JP2017172875A Active JP6342053B2 (ja) 2010-04-23 2017-09-08 半導体装置の作製方法
JP2018093773A Active JP6537671B2 (ja) 2010-04-23 2018-05-15 半導体装置の作製方法
JP2019104446A Active JP6685453B2 (ja) 2010-04-23 2019-06-04 半導体装置の作製方法
JP2020062602A Active JP6987915B2 (ja) 2010-04-23 2020-03-31 半導体装置の作製方法
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JP2016203307A Expired - Fee Related JP6209266B2 (ja) 2010-04-23 2016-10-17 半導体装置の作製方法
JP2017172875A Active JP6342053B2 (ja) 2010-04-23 2017-09-08 半導体装置の作製方法
JP2018093773A Active JP6537671B2 (ja) 2010-04-23 2018-05-15 半導体装置の作製方法
JP2019104446A Active JP6685453B2 (ja) 2010-04-23 2019-06-04 半導体装置の作製方法
JP2020062602A Active JP6987915B2 (ja) 2010-04-23 2020-03-31 半導体装置の作製方法
JP2021195073A Withdrawn JP2022019857A (ja) 2010-04-23 2021-12-01 半導体装置

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Country Link
US (1) US8546225B2 (enExample)
JP (8) JP5789403B2 (enExample)
TW (2) TWI528555B (enExample)
WO (1) WO2011132591A1 (enExample)

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KR101877377B1 (ko) 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
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CN103730373B (zh) * 2013-12-31 2016-09-07 京东方科技集团股份有限公司 一种半导体器件的制备方法及半导体器件
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JP6744108B2 (ja) 2015-03-02 2020-08-19 株式会社半導体エネルギー研究所 トランジスタ、トランジスタの作製方法、半導体装置および電子機器
KR102549926B1 (ko) 2015-05-04 2023-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기
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CN106252359B (zh) * 2016-08-26 2019-06-11 武汉华星光电技术有限公司 阵列基板及液晶显示面板
WO2020089762A1 (ja) 2018-11-02 2020-05-07 株式会社半導体エネルギー研究所 半導体装置
JP7446786B2 (ja) * 2019-11-18 2024-03-11 株式会社ジャパンディスプレイ 検出装置及び表示装置
JP7446785B2 (ja) * 2019-11-18 2024-03-11 株式会社ジャパンディスプレイ 検出装置及び表示装置
RU198076U1 (ru) * 2020-02-07 2020-06-17 Акционерное общество "Научно-производственное предприятие "Пульсар" Теплоотвод из композита алюминий-карбид кремния
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