JP5745363B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5745363B2 JP5745363B2 JP2011170161A JP2011170161A JP5745363B2 JP 5745363 B2 JP5745363 B2 JP 5745363B2 JP 2011170161 A JP2011170161 A JP 2011170161A JP 2011170161 A JP2011170161 A JP 2011170161A JP 5745363 B2 JP5745363 B2 JP 5745363B2
- Authority
- JP
- Japan
- Prior art keywords
- potential
- transistor
- oxide semiconductor
- electrode
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Electroluminescent Light Sources (AREA)
- Recrystallisation Techniques (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011170161A JP5745363B2 (ja) | 2010-08-06 | 2011-08-03 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010178169 | 2010-08-06 | ||
| JP2010178169 | 2010-08-06 | ||
| JP2011107864 | 2011-05-13 | ||
| JP2011107864 | 2011-05-13 | ||
| JP2011170161A JP5745363B2 (ja) | 2010-08-06 | 2011-08-03 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015094004A Division JP6028064B2 (ja) | 2010-08-06 | 2015-05-01 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012256400A JP2012256400A (ja) | 2012-12-27 |
| JP2012256400A5 JP2012256400A5 (enrdf_load_stackoverflow) | 2014-09-04 |
| JP5745363B2 true JP5745363B2 (ja) | 2015-07-08 |
Family
ID=45556073
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011170161A Expired - Fee Related JP5745363B2 (ja) | 2010-08-06 | 2011-08-03 | 半導体装置 |
| JP2015094004A Expired - Fee Related JP6028064B2 (ja) | 2010-08-06 | 2015-05-01 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015094004A Expired - Fee Related JP6028064B2 (ja) | 2010-08-06 | 2015-05-01 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8614916B2 (enrdf_load_stackoverflow) |
| JP (2) | JP5745363B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101783051B1 (enrdf_load_stackoverflow) |
| TW (1) | TWI555128B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015165447A (ja) * | 2010-08-06 | 2015-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103026416B (zh) * | 2010-08-06 | 2016-04-27 | 株式会社半导体能源研究所 | 半导体装置 |
| JP5531848B2 (ja) * | 2010-08-06 | 2014-06-25 | 富士通セミコンダクター株式会社 | 半導体装置、半導体集積回路装置、ＳＲＡＭ、Ｄｔ−ＭＯＳトランジスタの製造方法 |
| JP5879165B2 (ja) * | 2011-03-30 | 2016-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9336845B2 (en) | 2011-05-20 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Register circuit including a volatile memory and a nonvolatile memory |
| US8804405B2 (en) * | 2011-06-16 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| JP2014041344A (ja) | 2012-07-27 | 2014-03-06 | Semiconductor Energy Lab Co Ltd | 液晶表示装置の駆動方法 |
| US8937307B2 (en) | 2012-08-10 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| DE102013216824B4 (de) | 2012-08-28 | 2024-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
| JP2014142986A (ja) | 2012-12-26 | 2014-08-07 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| JP6405097B2 (ja) | 2013-02-28 | 2018-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6250883B2 (ja) * | 2013-03-01 | 2017-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2014142332A1 (en) | 2013-03-14 | 2014-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor device and semiconductor device |
| WO2014142043A1 (en) | 2013-03-14 | 2014-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor device and semiconductor device |
| US9245650B2 (en) | 2013-03-15 | 2016-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP6093726B2 (ja) | 2013-03-22 | 2017-03-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TWI664731B (zh) * | 2013-05-20 | 2019-07-01 | 半導體能源研究所股份有限公司 | 半導體裝置 |
| TWI618081B (zh) | 2013-05-30 | 2018-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置的驅動方法 |
| US9349418B2 (en) | 2013-12-27 | 2016-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for driving the same |
| KR102267237B1 (ko) | 2014-03-07 | 2021-06-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| JP6525421B2 (ja) * | 2014-03-13 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9716100B2 (en) | 2014-03-14 | 2017-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for driving semiconductor device, and electronic device |
| US9299848B2 (en) | 2014-03-14 | 2016-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, RF tag, and electronic device |
| US9887212B2 (en) * | 2014-03-14 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| WO2015136414A1 (ja) * | 2014-03-14 | 2015-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
| JP6487738B2 (ja) | 2014-03-31 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品 |
| JP6541398B2 (ja) | 2014-04-11 | 2019-07-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| KR102330412B1 (ko) | 2014-04-25 | 2021-11-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
| JP6616102B2 (ja) | 2014-05-23 | 2019-12-04 | 株式会社半導体エネルギー研究所 | 記憶装置及び電子機器 |
| JP6525722B2 (ja) | 2014-05-29 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 記憶装置、電子部品、及び電子機器 |
| JP6552336B2 (ja) | 2014-08-29 | 2019-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2016055894A1 (en) | 2014-10-06 | 2016-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US9424890B2 (en) | 2014-12-01 | 2016-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
| JP6667267B2 (ja) | 2014-12-08 | 2020-03-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6689062B2 (ja) | 2014-12-10 | 2020-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9583177B2 (en) | 2014-12-10 | 2017-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device including memory device |
| WO2016092416A1 (en) | 2014-12-11 | 2016-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and electronic device |
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| US9647132B2 (en) * | 2015-01-30 | 2017-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and memory device |
| JP6717604B2 (ja) | 2015-02-09 | 2020-07-01 | 株式会社半導体エネルギー研究所 | 半導体装置、中央処理装置及び電子機器 |
| US9489988B2 (en) | 2015-02-20 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
| KR20160117222A (ko) | 2015-03-30 | 2016-10-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 검사 방법 |
| US9589611B2 (en) | 2015-04-01 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, semiconductor device, and electronic device |
| WO2016170444A1 (ja) | 2015-04-21 | 2016-10-27 | 株式会社半導体エネルギー研究所 | 半導体装置、又はそのシステム |
| JP6935171B2 (ja) | 2015-05-14 | 2021-09-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP6901831B2 (ja) | 2015-05-26 | 2021-07-14 | 株式会社半導体エネルギー研究所 | メモリシステム、及び情報処理システム |
| WO2017068478A1 (en) * | 2015-10-22 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device including the semiconductor device |
| US9773787B2 (en) | 2015-11-03 | 2017-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, or method for driving the semiconductor device |
| US10490116B2 (en) | 2016-07-06 | 2019-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, and display system |
| JP6744190B2 (ja) * | 2016-10-06 | 2020-08-19 | 株式会社半導体エネルギー研究所 | 半導体装置、及び表示システム |
| JP6963463B2 (ja) | 2016-11-10 | 2021-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
| JP7187442B2 (ja) | 2017-04-10 | 2022-12-12 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
| CN110692099A (zh) | 2017-05-19 | 2020-01-14 | 株式会社半导体能源研究所 | 半导体装置或存储装置 |
| KR102786689B1 (ko) | 2017-06-02 | 2025-03-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
| JP6693907B2 (ja) * | 2017-06-08 | 2020-05-13 | 株式会社半導体エネルギー研究所 | 半導体装置、記憶装置、及び電子機器 |
| WO2018229590A1 (ja) | 2017-06-16 | 2018-12-20 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体ウェハ、電子機器、及び動作方法 |
| WO2019220259A1 (ja) | 2018-05-17 | 2019-11-21 | 株式会社半導体エネルギー研究所 | 記憶装置、半導体装置、および電子機器 |
| JP7401430B2 (ja) | 2018-06-22 | 2023-12-19 | 株式会社半導体エネルギー研究所 | 記憶装置および電子機器 |
| JP2020021814A (ja) * | 2018-07-31 | 2020-02-06 | 株式会社リコー | 電界効果型トランジスタの製造方法、並びに表示素子、画像表示装置、及びシステム |
| KR102734785B1 (ko) | 2018-08-09 | 2024-11-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 기억 장치 |
| KR20210075106A (ko) | 2018-10-11 | 2021-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 음원 분리 장치, 반도체 장치, 및 전자 기기 |
| US12156396B2 (en) | 2019-01-29 | 2024-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Memory device, semiconductor device, and electronic device |
| JP7528063B2 (ja) | 2019-04-26 | 2024-08-05 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
| US11996133B2 (en) | 2019-06-21 | 2024-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Memory circuit using oxide semiconductor |
| JP7692828B2 (ja) * | 2019-07-12 | 2025-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置、電子部品、及び電子機器 |
| WO2021053453A1 (ja) | 2019-09-20 | 2021-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2021209858A1 (ja) | 2020-04-17 | 2021-10-21 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP7532587B2 (ja) * | 2022-03-25 | 2024-08-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015165447A (ja) * | 2010-08-06 | 2015-09-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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| TWI555128B (zh) | 2016-10-21 |
| US20120033488A1 (en) | 2012-02-09 |
| JP2015165447A (ja) | 2015-09-17 |
| US8614916B2 (en) | 2013-12-24 |
| KR101783051B1 (ko) | 2017-09-28 |
| JP2012256400A (ja) | 2012-12-27 |
| JP6028064B2 (ja) | 2016-11-16 |
| KR20120061058A (ko) | 2012-06-12 |
| TW201220437A (en) | 2012-05-16 |
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