JP5781865B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5781865B2 JP5781865B2 JP2011184402A JP2011184402A JP5781865B2 JP 5781865 B2 JP5781865 B2 JP 5781865B2 JP 2011184402 A JP2011184402 A JP 2011184402A JP 2011184402 A JP2011184402 A JP 2011184402A JP 5781865 B2 JP5781865 B2 JP 5781865B2
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- Prior art keywords
- transistor
- oxide
- oxide semiconductor
- insulating layer
- region
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- 125000004432 carbon atom Chemical group C* 0.000 description 1
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- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical class [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
Description
本実施の形態では、本発明の一態様に係る半導体装置の構成およびその駆動方法について、図1乃至図6を参照して説明する。
図1は、半導体装置の構成の一例である。図1(A)には半導体装置の断面を、図1(B)には半導体装置の平面を、それぞれ示す。図1(A)において、A1−A2は、トランジスタのチャネル長方向に垂直な断面図であり、B1−B2は、トランジスタのチャネル長方向に平行な断面図である。図1に示す半導体装置は、下部に第1の半導体材料を用いたトランジスタ160を有し、上部に第2の半導体材料を用いたトランジスタ162を有する。また、図1に示す半導体装置は、トランジスタ160とトランジスタ162と容量素子164とを、一つずつ有する構成として示しているが、それぞれ複数有する構成も含む。
(a―A)2+(b―B)2+(c―C)2≦r2
を満たすことを言う。rとしては、例えば、0.05とすればよい。他の酸化物でも同様である。
次に、図1および図2に示す半導体装置の回路構成およびその動作について、図3を参照して説明する。なお、回路図においては、酸化物半導体を用いたトランジスタであることを示すために、OSの符号を併せて付す場合がある。
図3(A)に示す半導体装置において、第1の配線(1st Line)とトランジスタ160のソース電極(またはドレイン電極)とは、電気的に接続され、第2の配線(2nd Line)とトランジスタ160のドレイン電極(またはソース電極)とは、電気的に接続されている。また、第3の配線(3rd Line)とトランジスタ162のソース電極(またはドレイン電極)とは、電気的に接続され、第4の配線(4th Line)と、トランジスタ162のゲート電極とは、電気的に接続されている。そして、トランジスタ160のゲート電極と、トランジスタ162のドレイン電極(またはソース電極)は、容量素子164の電極の一方と電気的に接続され、第5の配線(5th Line)と、容量素子164の電極の他方は電気的に接続されている。また、図3(B)に示すように第2の配線と第3の配線が接続されていてもよい。
次に、図3に示す回路を応用したより具体的な回路構成および動作について、図4乃至図6を参照して説明する。なお、以下の説明においては、書き込み用トランジスタ(トランジスタ162)にnチャネル型トランジスタを用い、読み出し用トランジスタ(トランジスタ160)にpチャネル型トランジスタを用いる場合を例に説明する。また、図5のタイミングチャート中の斜線部は、高電位でも、低電位でもよい区間である。
本実施の形態においては、先の実施の形態において、図1に示す半導体装置の作製方法について図7乃至図11を参照して説明する。
まず、先の実施の形態に示す半導体装置の作製に用いられるSOI基板の作製方法の一例について、図7を参照して説明する。
次に、上記のSOI基板を用いた半導体装置の作製方法について、図8乃至図11を参照して説明する。
はじめに下部のトランジスタ160の作製方法について、図8および図9を参照して説明する。なお、図8および図9は、図7に示す方法で作成したSOI基板の一部であって、図1(A)または図2(A)に示す下部のトランジスタに相当する断面工程図である。
次に、上部のトランジスタ162の作製方法について、図10および図11を参照して説明する。
先の実施の形態において、トランジスタ162の半導体層に用いることのできる酸化物半導体層の一形態を、図13を用いて説明する。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子機器に適用する場合について、図14を用いて説明する。本実施の形態では、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラ、デジタルビデオカメラなどのカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などの電子機器に、上述の半導体装置を適用する場合について説明する。
酸化物半導体に限らず、実際に測定される絶縁ゲート型トランジスタの電界効果移動度は、さまざまな理由によって本来の移動度よりも低くなる。移動度を低下させる要因としては半導体内部の欠陥や半導体と絶縁膜との界面の欠陥があるが、Levinsonモデルを用いると、半導体内部に欠陥がないと仮定した場合の電界効果移動度を理論的に導き出せる。そこで、本実施の形態では、半導体内部に欠陥がない理想的な酸化物半導体の電界効果移動度を理論的に導き出すとともに、このような酸化物半導体を用いて微細なトランジスタを作製した場合の特性の計算結果を示す。
In、Sn、Znを主成分とする酸化物半導体をチャネル形成領域とするトランジスタは、該酸化物半導体を形成する際に基板を加熱して成膜すること、或いは酸化物半導体膜を形成した後に熱処理を行うことで良好な特性を得ることができる。なお、主成分とは組成比で5atomic%以上含まれる元素をいう。そこで、本実施の形態では、酸化物半導体膜の成膜後に基板を意図的に加熱することで、トランジスタの電界効果移動度を向上させた場合について、図23乃至29を用いて説明する。
試料1および試料2のいずれも、BT試験前後におけるしきい値電圧の変動が小さく、信頼性が高いことがわかる。
102 下地絶縁層
104 保護絶縁膜
106a 高抵抗領域
106b 低抵抗領域
106 酸化物半導体膜
108 ゲート絶縁層
110 ゲート電極
112 側壁絶縁膜
114 一対の電極
116 層間絶縁膜
118 配線
120 半導体層
122 絶縁層
124 マスク
126 不純物領域
130 不純物領域
132 不純物領域
134 チャネル形成領域
136 絶縁層
138 絶縁層
140 絶縁層
144 酸化物半導体層
146 ゲート絶縁層
150 絶縁層
154 配線
156 絶縁層
157 絶縁層
158 導電層
160 トランジスタ
162 トランジスタ
162a トランジスタ
162b トランジスタ
164 容量素子
170 メモリセル
400 絶縁層
437 絶縁層
453 酸化物半導体層
500 半導体基板
510 単結晶半導体基板
512 酸化膜
514 脆化領域
516 単結晶半導体層
518 単結晶半導体層
600 基板
602 下地絶縁層
604 一対の電極
606 酸化物半導体膜
608 ゲート絶縁層
610 ゲート電極
614 一対の電極
616 層間絶縁膜
618 配線
620 保護膜
701 筐体
702 筐体
703 表示部
704 キーボード
711 本体
712 スタイラス
713 表示部
714 操作ボタン
715 外部インターフェイス
720 電子書籍
721 筐体
723 筐体
725 表示部
727 表示部
731 電源
733 操作キー
735 スピーカー
737 軸部
740 筐体
741 筐体
742 表示パネル
743 スピーカー
744 マイクロフォン
745 操作キー
746 ポインティングデバイス
747 カメラ用レンズ
748 外部接続端子
749 太陽電池セル
750 外部メモリスロット
761 本体
763 接眼部
764 操作スイッチ
765 表示部
766 バッテリー
767 表示部
770 テレビジョン装置
771 筐体
773 表示部
775 スタンド
780 リモコン操作機
122a ゲート絶縁層
128a ゲート電極
128b 導電層
142a ソース電極
142b ドレイン電極
148a ゲート電極
148b 導電層
404a 酸化物導電層
404b 酸化物導電層
450a 結晶性酸化物半導体層
450b 結晶性酸化物半導体層
8101 下地絶縁層
8102 埋め込み絶縁物
8103a 半導体領域
8103b 半導体領域
8103c 半導体領域
8104 ゲート絶縁物
8105 ゲート
8106a 側壁絶縁物
8106b 側壁絶縁物
8107 絶縁物
8108a ソース
8108b ドレイン
Claims (2)
- 第1のトランジスタと、
第2のトランジスタと、を有し、
前記第1のトランジスタは、
第1のチャネル形成領域と、
前記第1のチャネル形成領域上の、第1のゲート絶縁層と、
前記第1のゲート絶縁層上の、第1のゲート電極と、
第1のソース領域と、
第1のドレイン領域と、を有し、
前記第1のチャネル形成領域は、シリコン半導体を有し、
前記第2のトランジスタは、
第2のチャネル形成領域と、
第2のゲート電極と、
前記第2のチャネル形成領域と、前記第2のゲート電極との間の、第2のゲート絶縁層と、
第2のソース電極と、
第2のドレイン電極と、を有し、
前記第2のチャネル形成領域は、酸化物半導体を有し、
前記酸化物半導体は、真性化又は実質的に真性化されたものであり、
前記第2のチャネル形成領域と、前記第1のソース領域又は前記第1のドレイン領域と間に、絶縁層を有し、
前記第1のゲート電極は、前記第2のソース電極又は前記第2のドレイン電極と電気的に接続され、
前記第2のトランジスタがオフ状態となる期間において、前記第1のソース領域又は前記第1のドレイン領域に正の電位が与えられた場合、前記第2のゲート電極に負の電位が与えられることを特徴とする半導体装置。 - 第1のトランジスタと、
第2のトランジスタと、を有し、
前記第1のトランジスタは、
第1のチャネル形成領域と、
前記第1のチャネル形成領域上の、第1のゲート絶縁層と、
前記第1のゲート絶縁層上の、第1のゲート電極と、
第1のソース領域と、
第1のドレイン領域と、を有し、
前記第1のチャネル形成領域は、シリコン半導体を有し、
前記第2のトランジスタは、
第2のチャネル形成領域と、
第2のゲート電極と、
前記第2のチャネル形成領域と、前記第2のゲート電極との間の、第2のゲート絶縁層と、
第2のソース電極と、
第2のドレイン電極と、を有し、
前記第2のチャネル形成領域は、酸化物半導体を有し、
前記酸化物半導体は、真性化又は実質的に真性化されたものであり、
前記第2のチャネル形成領域と、前記第1のソース領域又は前記第1のドレイン領域と間に、絶縁層を有し、
前記第2のチャネル形成領域は、前記第1のソース領域又は前記第1のドレイン領域の一部と重なり、
前記第1のゲート電極は、前記第2のソース電極又は前記第2のドレイン電極と電気的に接続され、
前記第2のトランジスタがオフ状態となる期間において、前記第1のソース領域又は前記第1のドレイン領域に正の電位が与えられた場合、前記第2のゲート電極に負の電位が与えられることを特徴とする半導体装置。
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JP (1) | JP5781865B2 (ja) |
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- 2011-08-19 WO PCT/JP2011/069239 patent/WO2012029637A1/en active Application Filing
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JP2012253312A (ja) | 2012-12-20 |
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KR20130107292A (ko) | 2013-10-01 |
US20120056647A1 (en) | 2012-03-08 |
TWI528359B (zh) | 2016-04-01 |
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US8654566B2 (en) | 2014-02-18 |
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