JP5426814B2 - インプリントリソグラフィ用の材料 - Google Patents
インプリントリソグラフィ用の材料 Download PDFInfo
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- JP5426814B2 JP5426814B2 JP2006554142A JP2006554142A JP5426814B2 JP 5426814 B2 JP5426814 B2 JP 5426814B2 JP 2006554142 A JP2006554142 A JP 2006554142A JP 2006554142 A JP2006554142 A JP 2006554142A JP 5426814 B2 JP5426814 B2 JP 5426814B2
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- imprint
- imprint material
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- substrate
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- 239000000463 material Substances 0.000 title claims description 114
- 238000001459 lithography Methods 0.000 title claims description 14
- 239000000203 mixture Substances 0.000 claims description 40
- 239000004094 surface-active agent Substances 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000003999 initiator Substances 0.000 claims description 14
- 239000000178 monomer Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 10
- -1 mono-substituted acrylate Chemical class 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 6
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims 3
- 239000004593 Epoxy Substances 0.000 claims 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 claims 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 40
- 238000000034 method Methods 0.000 description 22
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 18
- 238000005530 etching Methods 0.000 description 18
- 238000012546 transfer Methods 0.000 description 17
- 230000005855 radiation Effects 0.000 description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 230000002209 hydrophobic effect Effects 0.000 description 7
- 238000002156 mixing Methods 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 238000006116 polymerization reaction Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- RIWRBSMFKVOJMN-UHFFFAOYSA-N 2-methyl-1-phenylpropan-2-ol Chemical compound CC(C)(O)CC1=CC=CC=C1 RIWRBSMFKVOJMN-UHFFFAOYSA-N 0.000 description 4
- VKPVUNFNWSJTBJ-UHFFFAOYSA-N [dimethyl(trimethylsilyloxy)silyl]methyl prop-2-enoate Chemical compound C[Si](C)(C)O[Si](C)(C)COC(=O)C=C VKPVUNFNWSJTBJ-UHFFFAOYSA-N 0.000 description 4
- 238000004132 cross linking Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- BSMGLVDZZMBWQB-UHFFFAOYSA-N 2-methyl-1-phenylpropan-1-one Chemical compound CC(C)C(=O)C1=CC=CC=C1 BSMGLVDZZMBWQB-UHFFFAOYSA-N 0.000 description 2
- 241000252506 Characiformes Species 0.000 description 2
- 206010073306 Exposure to radiation Diseases 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- ZQTYRTSKQFQYPQ-UHFFFAOYSA-N trisiloxane Chemical compound [SiH3]O[SiH2]O[SiH3] ZQTYRTSKQFQYPQ-UHFFFAOYSA-N 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 125000005739 1,1,2,2-tetrafluoroethanediyl group Chemical group FC(F)([*:1])C(F)(F)[*:2] 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000011243 crosslinked material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000001494 step-and-flash imprint lithography Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 210000000779 thoracic wall Anatomy 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/101—Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polymerisation Methods In General (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
Claims (14)
- インプリントリソグラフィ用のインプリント材料であって、
界面活性剤と、単量体と、開始剤とを含む組成物を備え、
その組成物が液体状態で25センチポアズ未満の粘度と20トル未満の蒸気圧とを有し、かつ固体硬化状態で、100MPaを超える引っ張り係数と、3MPaを超える破壊応力と、2%を超える破断点伸びを有し、
前記界面活性剤が、ZONYL(R)のFSO−100、FLUORAD(R)のFC4430、およびFLUORAD(R)のFC4432のいずれかを含み、
前記単量体が、エポキシと、アクリレートと、メタクリレートと、ビニルエーテルより構成される一組の単量体から選択されることを特徴とするインプリント材料。 - 前記単量体が、シリコンを内部に含む一組の重合可能な成分から選択される請求項1に記載のインプリント材料。
- 前記単量体が、置換アクリレートである請求項1に記載のインプリント材料。
- 前記単量体が、シリコン含有アクリレートである請求項1に記載のインプリント材料。
- 前記単量体が、一置換アクリレートと多官能置換アクリレートとから本質的になる一組の置換アクリレートから選択される請求項1に記載のインプリント材料。
- 前記開始剤が、光開始剤と熱開始剤とから構成される一組の開始剤から選択される請求項1に記載のインプリント材料。
- 前記開始剤が、ラジカル光開始剤から構成される一組の開始剤から選択される請求項1に記載のインプリント材料。
- 前記液体状態の前記粘度が、10センチポアズ未満である請求項1に記載のインプリント材料。
- 前記液体状態の前記粘度が、5センチポアズ未満である請求項1に記載のインプリント材料。
- 前記蒸気圧が5トル未満である請求項1に記載のインプリント材料。
- 前記蒸気圧が2トル未満である請求項1に記載のインプリント材料。
- 前記引っ張り係数は100MPa以上である請求項1に記載のインプリント材料。
- 前記破壊応力は3MPa以上である請求項1に記載のインプリント材料。
- 前記破断点伸びが8%以上である請求項1に記載のインプリント材料。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/784,911 | 2004-02-23 | ||
US10/784,911 US8076386B2 (en) | 2004-02-23 | 2004-02-23 | Materials for imprint lithography |
PCT/US2005/004415 WO2005082992A1 (en) | 2004-02-23 | 2005-02-14 | Materials for imprint lithography |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012139488A Division JP5753132B2 (ja) | 2004-02-23 | 2012-06-21 | インプリントリソグラフィ用の材料 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007523249A JP2007523249A (ja) | 2007-08-16 |
JP2007523249A5 JP2007523249A5 (ja) | 2013-11-21 |
JP5426814B2 true JP5426814B2 (ja) | 2014-02-26 |
Family
ID=34861540
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006554142A Active JP5426814B2 (ja) | 2004-02-23 | 2005-02-14 | インプリントリソグラフィ用の材料 |
JP2012139488A Active JP5753132B2 (ja) | 2004-02-23 | 2012-06-21 | インプリントリソグラフィ用の材料 |
JP2014258521A Active JP6326700B2 (ja) | 2004-02-23 | 2014-12-22 | インプリントリソグラフィ用の材料 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012139488A Active JP5753132B2 (ja) | 2004-02-23 | 2012-06-21 | インプリントリソグラフィ用の材料 |
JP2014258521A Active JP6326700B2 (ja) | 2004-02-23 | 2014-12-22 | インプリントリソグラフィ用の材料 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8076386B2 (ja) |
EP (2) | EP2261280B1 (ja) |
JP (3) | JP5426814B2 (ja) |
MY (1) | MY141006A (ja) |
TW (1) | TWI324622B (ja) |
WO (1) | WO2005082992A1 (ja) |
Families Citing this family (183)
Publication number | Priority date | Publication date | Assignee | Title |
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US7442336B2 (en) * | 2003-08-21 | 2008-10-28 | Molecular Imprints, Inc. | Capillary imprinting technique |
US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US7365103B2 (en) * | 2002-12-12 | 2008-04-29 | Board Of Regents, The University Of Texas System | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US20060108710A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Method to reduce adhesion between a conformable region and a mold |
US20050160934A1 (en) * | 2004-01-23 | 2005-07-28 | Molecular Imprints, Inc. | Materials and methods for imprint lithography |
US7307118B2 (en) * | 2004-11-24 | 2007-12-11 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
US8211214B2 (en) | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US7906180B2 (en) * | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
KR100632632B1 (ko) * | 2004-05-28 | 2006-10-12 | 삼성전자주식회사 | 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자 |
DE602005022874D1 (de) * | 2004-06-03 | 2010-09-23 | Molecular Imprints Inc | Fluidausgabe und tropfenausgabe nach bedarf für die herstellung im nanobereich |
US20060062922A1 (en) * | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US20060081557A1 (en) | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
US8557351B2 (en) | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
US8808808B2 (en) * | 2005-07-22 | 2014-08-19 | Molecular Imprints, Inc. | Method for imprint lithography utilizing an adhesion primer layer |
US7759407B2 (en) | 2005-07-22 | 2010-07-20 | Molecular Imprints, Inc. | Composition for adhering materials together |
US8846195B2 (en) * | 2005-07-22 | 2014-09-30 | Canon Nanotechnologies, Inc. | Ultra-thin polymeric adhesion layer |
JP5000112B2 (ja) * | 2005-09-09 | 2012-08-15 | 東京応化工業株式会社 | ナノインプリントリソグラフィによるパターン形成方法 |
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2004
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WO2005082992A1 (en) | 2005-09-09 |
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EP1718697A1 (en) | 2006-11-08 |
EP1718697A4 (en) | 2007-03-21 |
JP2012195610A (ja) | 2012-10-11 |
EP2261280A1 (en) | 2010-12-15 |
EP2261280B1 (en) | 2014-10-08 |
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