IT1068535B - Apparecchio e processo elettrolito grafico - Google Patents

Apparecchio e processo elettrolito grafico

Info

Publication number
IT1068535B
IT1068535B IT27579/76A IT2757976A IT1068535B IT 1068535 B IT1068535 B IT 1068535B IT 27579/76 A IT27579/76 A IT 27579/76A IT 2757976 A IT2757976 A IT 2757976A IT 1068535 B IT1068535 B IT 1068535B
Authority
IT
Italy
Prior art keywords
graphic
electrolyte process
electrolyte
graphic electrolyte
Prior art date
Application number
IT27579/76A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of IT1068535B publication Critical patent/IT1068535B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2045—Electron beam lithography processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31781—Lithography by projection from patterned cold cathode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Photoreceptors In Electrophotography (AREA)
IT27579/76A 1975-11-03 1976-09-24 Apparecchio e processo elettrolito grafico IT1068535B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62826675A 1975-11-03 1975-11-03

Publications (1)

Publication Number Publication Date
IT1068535B true IT1068535B (it) 1985-03-21

Family

ID=24518168

Family Applications (1)

Application Number Title Priority Date Filing Date
IT27579/76A IT1068535B (it) 1975-11-03 1976-09-24 Apparecchio e processo elettrolito grafico

Country Status (4)

Country Link
US (1) US4119688A (it)
JP (1) JPS596506B2 (it)
DE (1) DE2647242A1 (it)
IT (1) IT1068535B (it)

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DE3020809A1 (de) * 1980-06-02 1981-12-10 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München Verfahren zur herstellung eines elektronenstrahlaustrittsfensters
DE3235064A1 (de) * 1982-09-22 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Tunnelkathodenmaske fuer die elektronenlithografie, verfahren zu ihrer herstellung und verfahren zu ihrem betrieb
US4612432A (en) * 1984-09-14 1986-09-16 Monolithic Memories, Inc. Etching plasma generator diffusor and cap
JPS6157018U (it) * 1984-09-20 1986-04-17
JPS61176013U (it) * 1985-04-23 1986-11-01
US4661203A (en) * 1985-06-28 1987-04-28 Control Data Corporation Low defect etching of patterns using plasma-stencil mask
US4827137A (en) * 1986-04-28 1989-05-02 Applied Electron Corporation Soft vacuum electron beam patterning apparatus and process
JPH0834205B2 (ja) * 1986-11-21 1996-03-29 株式会社東芝 ドライエツチング装置
JPS641110U (it) * 1987-06-23 1989-01-06
US5003178A (en) * 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
US5032205A (en) * 1989-05-05 1991-07-16 Wisconsin Alumni Research Foundation Plasma etching apparatus with surface magnetic fields
JPH0586615U (ja) * 1992-04-28 1993-11-22 豊田合成株式会社 ベントダクト
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6458430B1 (en) * 1999-12-22 2002-10-01 Axcelis Technologies, Inc. Pretreatment process for plasma immersion ion implantation
WO2001047003A2 (en) * 1999-12-23 2001-06-28 University Of Massachusetts Methods and apparatus for forming submicron patterns on films
US6921615B2 (en) 2000-07-16 2005-07-26 Board Of Regents, The University Of Texas System High-resolution overlay alignment methods for imprint lithography
EP2270592B1 (en) 2000-07-17 2015-09-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
US6954275B2 (en) 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
AU2001286573A1 (en) 2000-08-21 2002-03-04 Board Of Regents, The University Of Texas System Flexure based macro motion translation stage
JP2004523906A (ja) * 2000-10-12 2004-08-05 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 室温かつ低圧マイクロおよびナノ転写リソグラフィのためのテンプレート
US6964793B2 (en) * 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
JP2005520220A (ja) * 2001-05-16 2005-07-07 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム 電界を使用して光硬化可能な組成物内にナノスケール・パターンを作製するための方法およびシステム
US7037639B2 (en) 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7071088B2 (en) 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US7641840B2 (en) * 2002-11-13 2010-01-05 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US6929762B2 (en) 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6980282B2 (en) * 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
US7452574B2 (en) 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US7090716B2 (en) 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7261830B2 (en) * 2003-10-16 2007-08-28 Molecular Imprints, Inc. Applying imprinting material to substrates employing electromagnetic fields
WO2005070167A2 (en) * 2004-01-12 2005-08-04 The Regents Of The University Of California Nanoscale electric lithography
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
JP5130094B2 (ja) * 2008-03-31 2013-01-30 東海ゴム工業株式会社 圧力感応切換式オリフィス通路を備えた流体封入式防振装置
JP2010258106A (ja) * 2009-04-22 2010-11-11 Toshiba Corp パターン転写方法
US9887847B2 (en) 2016-02-03 2018-02-06 International Business Machines Corporation Secure crypto module including conductor on glass security layer

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US3453723A (en) * 1966-01-03 1969-07-08 Texas Instruments Inc Electron beam techniques in integrated circuits
US3544790A (en) * 1968-03-01 1970-12-01 Western Electric Co An electron beam masking arrangement
US3679497A (en) * 1969-10-24 1972-07-25 Westinghouse Electric Corp Electron beam fabrication system and process for use thereof
US3668028A (en) * 1970-06-10 1972-06-06 Du Pont Method of making printing masks with high energy beams
US3873371A (en) * 1972-11-07 1975-03-25 Hughes Aircraft Co Small geometry charge coupled device and process for fabricating same
US3956052A (en) * 1974-02-11 1976-05-11 International Business Machines Corporation Recessed metallurgy for dielectric substrates
US3931435A (en) * 1974-12-20 1976-01-06 International Business Machines Corporation Electron beam positive resists containing acetate polymers

Also Published As

Publication number Publication date
US4119688A (en) 1978-10-10
JPS596506B2 (ja) 1984-02-13
JPS5258604A (en) 1977-05-14
DE2647242A1 (de) 1977-05-12

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