TWI324622B - Materials for imprint lithography - Google Patents
Materials for imprint lithography Download PDFInfo
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- TWI324622B TWI324622B TW094105242A TW94105242A TWI324622B TW I324622 B TWI324622 B TW I324622B TW 094105242 A TW094105242 A TW 094105242A TW 94105242 A TW94105242 A TW 94105242A TW I324622 B TWI324622 B TW I324622B
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- surfactant
- embossing
- viscosity
- imprint
- polymerizable component
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/10—Printing inks based on artificial resins
- C09D11/101—Inks specially adapted for printing processes involving curing by wave energy or particle radiation, e.g. with UV-curing following the printing
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- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polymerisation Methods In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Description
1^24622
10
九、發明說明: C 明所屬技領3 本發明一或更多具體例係一般地有關壓印微影技 術。特別地,本發明一或更多具體例係有關用於壓印 微影技術的材料》
L· Λ. iltr H 微製造包含製造極小結構,舉例來說,但不侷限 於具有微米量級或更小特徵的結構。微製造在積體電 路製程領域中已具有相當大的影響。當半導體製程產 業持續增加每單位面積在基板上形成之電路上來力求 更大的產率,微製造由於可提供較大製程控制來允許 降低形成的結構至最小特徵尺寸。其他微製造已使用 發展之領域包括生物科技’光學科技,機械系統及類 似。 一例示性微製造技術揭露於w i 1丨s ο n e ί α Λ之U. S patent No 6,3 3 4,960。特別地,Willson ei 以專利揭露 一種利用壓印微影技術在基板上形成一浮雕影像的方 法。該方法包括提供一具有轉移層(典型地為旋轉塗佈) 的基板,並依序利用一低黏度、可聚合(典型地為可uv 固化)液體組成(典型地為液滴狀)覆蓋該轉移層。該方 法更包括一具有浮雕結構和該壓印板或模可聚合液體 組成之機械接觸,其中該可聚合液體組成填充介於壓 印板及基板間的間隙並填充該壓印板的浮雕結構◊其 次,該方法包括使該可聚合液體組成固化並聚合化的 20 1324622 情況(典型地為使該可聚合液體组成暴露於u v下來進 行交聯),由此在具有和磨印板互補之浮離結構的轉移 層上形成固化聚合性材料。其次,該方法包括由該基 板分離該歷印板使固態聚合性材料留在基板上,其固 態聚合性材料包括和浮雕結構互補之浮雕圖案。其 人該固化之可聚合性材料及該轉移層,在可相對固 化聚合性材料選擇性蝕刻轉移層的環境中,在轉移詹 上形成一浮雕影像。 當發展一種在該固化聚合性材料上形成微細浮雕 10 圖案的方法及/或有用材料,接下來的問題係相對於該 固化聚合性材料對不同表面之選擇性黏著。首先,該 固化聚合性材料應良好地黏著至基板上之轉移層,其 其應g谷易地由該塵印板表面鬆脫。這些目標典 型地和鬆脫特性有關,且當其滿足時,被紀錄在固化 15 聚合性材料中之浮雕圖案,在由該基板分離壓印板時 不會變形。 除了上述鬆脫特性之外,當設計一用於壓印微影之 壓印材料時,更需考慮的問題包括:⑷低點度,舉例 ^ 仁不侷限於黏度在25°c時為5厘泊或更少,來快 0速地在基板及壓印板表面擴展,並快速填充該壓印材 料至該浮雕圖案。若黏度足夠小使壓力最小較佳,舉 來說仁不侷限於一約2_4 psi的壓力,且不需額外加 熱使泫壓印材料移動至壓印板上的浮雕圖案;⑻低蒸 坚使,备發'(由於壓印材料液滴的數量級為微微 1324622 升,因此蒸發是一個問題,且此會導致液滴在表面積 和體積之間具有大的比值);(C)固化壓印材料的聚合強 度。 .由於以上所述’需要用於壓印微影技術之壓印材 5料,其滿足一或更多以上定義之設計規範。
H ]J 發明概要
本發明為用於壓印微影技術之材料,其組成特徵為 具有與該組成相隨的黏度,且包括一表面活性劑、一 10可聚合成A ,針肖該刺激起反應並在反應I改變黏度 之一*起始劑, 該組成在液態下具有低於約100厘泊
破裂時高於2%之伸長量。 15 圖式簡單說明
系統之透試圖; 一或更多具體例之微影
20 及交聯前之簡單表示;
7 正面簡圖。 第6圖為根據本發明配置於 一基板上的壓印材料之 【貧施方式】 一或更多具體例用來實現壓
間分離的。Μ印頭18係連接至架14,並由架14伸展至 第1圖顯示根據本發明一或 印微影技術的微影系統10 ,且 或更多具體例之壓印材料。如3 10 支樓平台16。 移動平台20被配置於支撐平台16上並面 向C Ρ頭1 8且裝配移動平台2 0使其沿相對於支撑平 台16沿X-及γ_軸移動。輻射源22被連接至系統1〇來對 移動平台20照射光化輻射 。在第1圖中更顯示,輻射源 22被連接至架14,且包括一連接至輻射源22之電源產 15生器23。一系統實施例可由在1807-c Braker Lane, Suite 100,Austin,Texas 78758 有營業處之 M〇iecular
Imprints,Inc.中品名為…叹⑴1〇〇TM得到。該…叹⑴ 100 系統之說明可由 www.molecularimprints.cnm 借 到,並在此併入參照。 20 參照第1及第2圖’一具有模28在其上之壓印板26 連接至壓印頭18。模28包括數個由數個空間分離凹處 28a及凸出2 8b定義之圖貌。該數個圖貌定義一原始圖 案,其係再被轉移至位於移動平台20上之基板31。基 板31可包含一裸晶圓或一在其上具有單或多層沉積之 8 1324622 晶圓。為了這個目的,壓印頭18被改變為沿z軸移動並 改變介於模2 8及基板3 1間距離,,(!,,。在此方法,模2 8上 之圖貌可被壓印至基板31之適當區域,在以下更完整 說明。輻射源22被設置於使模28位在介於模28及基板 5 31之間。因此,模28係由可大量穿透輻射源22產生之 輻射的材料所製成。
10 15
20 參照第2及第3圖,諸如壓印層34之適當區域,被暴 露於表面32之一部分存在一大部分平面輪廓。需知該 適當區域可利用任何已知技術在表面32上製造適當材 料來形成。根據本發明之一具體例,具有壓印層34之 適當區域被沉積作為數個空間分離分散微滴36的壓印 材料36a於基板3 1上,以下將更完整說明。壓印層34係 由低分子量材料36a形成,其同時聚合及交聯來記錄其 中之原圖案,來定義一已記錄圖案。第4圖顯示壓印材 料36a將聚合及交聯,形成交聯聚合性材料36c。交聯係 顯示於點36b » 參照第2,第3及第5圖,記錄在壓印層3 4之圖案係 部分利用和模28機械接觸產生。為了這個目的,壓印 頭18減少距離” d”使壓印材料34和模28機械接觸,散佈 微滴36使在表面32隨著壓印材料36a的形成來形成壓印 層34。在一具體例中,降低距離,,d,,使壓印層34之次部 分34a進入並填充凹處28a。 為了幫助凹處28a的填充,提供之材料363具有在利 用材料36a的連續形成覆蓋表面32時完全填充凹處28a 9 的特性。根據本發明之_具體例,和凸出28b重叠之壓 P層34之久部分34b,在達到所欲之最小距離,,d”後使 次,部分34a厚度為t】且次部分34b厚度為t2。厚度、,, 及t2 ,根據其應用可為任意所欲之厚度。 參’、、、第2,第3及第4圖,在達到所欲距離” d,,之後, 輻射源22產生之光化輻射聚合且交聯材料,形成大 邛刀已父聯之聚合性材料36c。因此,材料“a轉變為固 體聚合性材料36c來形成壓印層134,如第5圖所示。特 別地’材料36c被固化提供壓印層134具有和模28之表面 1〇 28C形狀一致之邊34c,具有凹處30之壓印層134(該凹處 之底部可稱作殘留層)。在壓印層134被轉換成包含材料 3 6c,如第4圖所示,顯示於第2圖之壓印頭18被移動來 增加距離”d”,使模28及壓印層134為空間分離。 參照第5圖,可使用額外製程來完成基板31之圖案 15化例如’基板3 1及壓印層1 3 4可被姓刻來轉換壓印層 134之圖案至基板31,提供一被圖案化表面(未顯示 為了促進蝕刻,由形成壓印層134之材料的不同可來定 義相對基板3 1之所欲的相對姓刻速率。 為了這個目的’可利用兩製程步驟進行蝕刻。s c 20 Johnson, T.C. Bailey. M.D. Dickey, B.J. Smith, E.K.
Kim,A.T. Jamieson,N.A. Stacey,J.G. Ekerdt,及 C.G. Willson在標題為 “Advances in Step and Flash Imprint Lithography, 5 SPIE Microlithographv Conference. February 2003的文章中說明適合的蝕刻製程,其可由 10 …、第1及第2圖’一典型的輻射源22可產生紫外 ’然而,可使用任何已知之輻射源。用來起始聚合 s 4材料之輻射源的選擇,對熟習此技藝者為已 知’且典型地根據所欲之特定應用。此外,模28上之 數個圖貌顯示如沿平行凸出28b擴展之凹處心,使模Μ 、有城%形狀之載面。然而,凹處28a及凸出28b可根 據所而任何圖貌產生一積體電路且可小至數十奈米。 10 15 參照第1 ’第2及第5圖,由本圖案化技術製造之圖 案可轉移至基板31來提供具有長寬比為3〇:1之圖貌。為 了知·個目的,模28之一具體例具有定義一長寬比範圍 為1:1至1〇:1之凹處28a。特別地,凸出2补具有一範圍 ’·’勺10nm至約5000μηι之寬度丨,而凹處28a具有一範圍 約10nm至約5000μπι之寬度W2。因此,模28及/或模板 26可由各種傳統材料形成,諸如但不侷限於熔融矽, 石英,矽,有機聚合物,矽氧烷聚合物,矽酸硼玻璃, 氟碳聚合物,金屬,硬化藍寶石及類似。 參照第1 ’第2及第3圖,材料3 6 a之特性在使用獨特 沉積製程對有效圖案化基板3 1是重要的。如上所述, 材料36a被沉積在基板31上作為數個獨立且空間分離之 20 微滴36。微滴36結合之體積使壓印材料36a適當的分佈 在欲形成麼印層34之表面32區域。因此,壓印層34同 時被擴展及圖案化,且圖案隨後由暴露諸如紫外光之 輻射至壓印層34。由於該沉積製程,材料36a具有促進 急速且微滴36中塵印材料36a由表面32擴展之特殊特性 12 1324622
10 15 是所欲的’故全部tl厚度是完全均勻且t2厚度是完全均 勻。所欲之特性包括具有低黏度,舉例來說,但不侷 限於在約0·5至約5厘泊(csp),且具有潤濕基板3 1及/或 模2 8表面的能力來避免在聚合後形成之孔或洞。當滿 足這些特性後’壓印層34可充分地薄化避免在諸如次 分34b之較溥區域形成孔或洞,如第5圖所示。然而, 材料36a的特性係根據製程且可根據需要而改變。例 如’該黏度可為1〇〇 cps或更高。 形成提供前述特性之材料36a的組成成分可不同。 其係由於基板31可由多種不同材料形成。因此,表面 32之化學組成根據基板3 1形成之材料而不同。例如, 基板3 1可由二氧化矽,磷化銦,鈮酸鋰,鈕酸鋰,矽, 塑膠,砷化鎵,碲化汞或類似形成。此外,基板31在 次部分34b中可包括如介電層,金屬層,半導體層,平 坦化層及類似之一或多層。
20 參照第2 ’第3及第4圖’然而材料36a包括滿足當模 28和材料36a及材料36c接合時所欲之鬆脫特性的成 分。特別地’為了確保有效的填充模2 8的圖貌,需建 立模28及材料36a間的界面來促進壓印材料36a在模28 的潤濕性。然而,當材料36a被固化至材料36c,材料36a 需優先地黏著至基板31的表面32,且容易地由模28鬆 脫。在此形式,可減少記錄在固化材料36c圖案的變形。 材料36c優先地黏著至基板3丨係有關於鬆脫特性。該壓 印材料36c之鬆脫特性係利用由Taniguchi et a丨在
13 1324622
Measurement of Adhesive Force Between Mold and
Photocurable Resin in Imprint Technology. Japanese
Journal of Applied Physics, part 1, vol. 40, beginning at page 41 94 (2002)說明之黏著測試來測量。已揭露該 5 些鬆脫特性的較佳值為:(a)舉例來說,但不揭限於對
模28的黏著力約為〇. 15 kg或更少;及(b)舉例來說,但 不侷限於對基板3 1的黏著力約為1.14 kg或更多。較佳 之之黏著力比值’即基板31之黏著力/模28之黏著力[以 下稱為黏著比]為5或更大。 10 除了上述之鬆脫特性,當設計 15 20 材料時’更需考慮包括:(a)低黏度,舉例來說,但不 偈限於55厘泊或更少的黏度,使在基板上有所欲之潤 濕及擴展,且快速填充該壓印板上之圖貌(若黏度夠低 使最小壓力(舉例來說,但不侷限於約2 4 psi)最小戍 不需額外加熱來移動該壓印材料至壓印板之圖貌);^) 低蒸汽壓使蒸發少(由於壓印材料液滴的數量級為微 微升,蒸發是一個問題,且此會導致液滴在表面積和 體積之間具有大比例);(c)使用適合之起始劑來在暴露 至如UV光、熱輻射或類似之光化輻射時起始聚合;(幻 —滿足在液態時低黏度特性之單體成分,並在固離固 化時提供適合之機械強度;及⑷提供所欲之砂來提供 钱刻選擇性之矽化單體。 ’、 除了以上所述,吾人已揭露聚合壓印材料在考慮< 叶一適合之壓印材料時,所欲之巨觀機械性 =X 貝。其包 14 1324622 括:(a)舉例來說,但不侷限於約1〇〇 4〇〇 Mpa或更大 之拉伸模數-典型地,愈高愈好;(b)舉例來說,但不 偈限於約3-12 MPa或更大之斷裂應力-典型地,愈高愈 好;及(c)舉例來說,但不侷限於2%或更多之斷裂伸長 5 量。
10 適合之壓印材料的設計係為一反覆程序,其著重於 材料在以下順序:(a)成分揮發性(即使用低蒸汽壓成 分);(b)黏度控制(即使用低黏度成分);(c)快速聚合動 力學,如低於一分鐘及較適合低於兩秒;成分混合 性,(e)機械性質(拉伸模數,斷裂應力,斷裂伸長量及
Tg) ; (f)调濕及擴展(流體行為);黏著性(對壓印板 低但對基板高)。
低黏度的需求會限制用於製造該壓印材料成分的 選擇。為了增加根據非極性單體之聚合材料的強度, 可以妥協並加入較高黏度之成分。例如,利用異冰片 丙稀酸醋作為架構並加入含矽丙烯酸酯單體成分來提 供石夕用於蝕刻選擇性。典型地,明確地加入高黏度成 分來保持壓印材料36a整體之黏度小於5 cps。 吾人由考慮上述設計需注意之事項已設計一廢印 2〇材料,並加入使用氟化表面活性劑來滿足所需之鬆脫 特性。一材料36a之組成實施例使用氟化表面活性劑, 其係由下述成分所混合製造(實施例之比例由重量表 不):(i)丙烯酿氧代基五甲基二矽氧烷(舉例來說但 不偽限於約 37gm),其可由 Ge丨est,Inc. of M〇rrisvUie 15 1324622
10 15
Pennsylvania的XG-1064得到,(ii)異冰片丙烯酸酯 (“IBΟA”)(舉例來說,但不侷限於約42gm),其可由 Aldrich Chemical Company of Milwaukee, Wisconsin得 到’(iii)乙二醇二丙烯酸酯(舉例來說,但不侷限於 5 約 18gm) ’ 其可由 Aldrich Chemical Company of
Milwaukee,Wisconsin得到,(iv) —UV起始劑,舉例來 說’但不侷限於2-羥基-2-曱基-1·苯基-l-丙酮(舉例來 說,但不侷限於約3gm),其可由CIBA® of Tarrytown, New York 之 Darocur® 1173得到及(v)FSO-lOO (舉例來 說,但不侷限於約〇 5gm),其中Fs〇_1〇〇為一表面活性 劑,可由 DUPONTTMiZONYL® FSO-100得到(FSO-100 具有R1R2的一般結構,其中ri = f(CF2CF2)Y,Y的範 圍為包含 1至7,而 R2 = CH2CH20(CH2CH20)XH,其中 X的範圍為包含〇至15)。 另一材料36a之不同組成,其係由下述成分所混合 製造(實施例之比例由重量表示):(i)丙烯醯氧代基五 甲基二矽氧炫(舉例來說,但不侷限於約37gm),其可由 Gelest, lnc. 〇f Morrisvi】le,Pennsylvani^XG i〇64得 到,(ii)異冰片丙烯酸酯(“IB0A,,)(舉例來說,但不侷 20 限於約 42gm),其可由 Aldrich chemicai Company of Milwaukee,Wisconsin得到,(⑴)乙二醇二丙烯酸酯 (舉例來說,但不偈限於約18gm),其可由A】drich
Chenncal Company 〇f Milwaukee,WiSC0nsin得到,(iv) 一uv起始劑,舉例來說,但不侷限於2羥基·2甲基-^ 16 1324622 苯基· 1 -丙酮(舉例來說,但不侷限於約3gm),其可由 CIBA® of Tarrytown, New York之 Darocur 1173得到及 (v)FC4432 (舉例來說,但不侷限於約〇.5gm),其中 FC4432為一聚合表面活性劑,可由3M公司之 5 FLUORAD® FC4430得到。
10 除了含矽成分之材料36a之外,可使用不含矽成分 之材料36a »不含矽成分之實施例包括i)大約55 gni之異 冰片丙烯酸酯,ii)大約27 gm之正己丙烯酸酯,iii)大約 15呂爪之乙二醇二丙稀酸酯,iv)大約0.5 gm之ZONYL® FSO-1〇〇表面活性劑’及v)大約3 gm之DAROCUR®起始 劑。 其他之不含矽成分之材料3 6a實施例包括i)大約5 5 gm之異冰片丙烯酸酯’ ii)大約27 gm之正己丙烯酸酯, 大約15 gm之乙二醇二丙烯酸酯,iv)大約〇 5 §111之 15 FC4432表面活性劑,及v)大約3 gm之DAROCUR®起始 劑。 另—不含矽成分之材料36a實施例包括〇大約55 gm之異冰片丙烯酸酯,u)大約27 gm之正己丙烯酸酯, ⑴)大,力15 gm之乙二醇二丙烯酸酯,iv)大約〇 5 gm之 20 ZONYL® Fs〇_1〇〇表面活性劑,及v)大約3㈣組成之
DarocUr®起始劑。上述定義之各成分亦包括在化學技藝 中熟知來增加該成分使用期限之穩定劑。 在另—不含矽成分之材料36a包括—表面活性劑混 合物’其包括不含氟化表面活性劑及含氟化表面活性 17 1324622 5
10 15
20 劑。一組成實施例包括i)大約55 gm<異冰片丙稀酸 6曰’ ii)大約27gm之正己丙烯酸酷,⑴)大約之乙 二醇二丙烯酸酯,1V)大約3 gm之Darocur®起始劑及〇 5 gm之表面活性劑混合物。一表面活性劑混合物實施例 包含0.25 gm之FC4432及0.25 gm之三矽氧烷表面活性 劑,其可由 Dow Corning Corporati〇n 〇f Auburn, Michigan之 Sylgard® 309得到。 類似地,該表面活性劑混合物可和上述含矽成分同 時使用。一組成實施例包括(i)丙烯醯氧代基五甲基二 矽氧烷(舉例來說,但不侷限於約37gm) (ii)異冰片丙 烯酸酯(“IBOA”)(舉例來說,但不侷限於約42gm)(⑴) 乙二醇二丙烯酸酯(舉例來說,但不侷限於約1 8gm) (^) Darocur 1173 (舉例來說,但不侷限於約3gm)及(v) 一 表面/舌性劑混合物實施例包含〇.25 gm之FC4432及0.25 gm之三矽氧烷表面活性劑,其可由D〇w c〇rning Corporation of Auburn,Michigan之 Sylgard® 309得到。 上述疋義之各成分亦包括在化學技藝中熟知來增 加。玄成刀使用期限之穩定劑。該表面活性劑包含少於 1 %之壓印材料。然而,該表面活性劑的百分比可大於1%。 由上述壓印材料提供之優點為不需先天之鬆脫 層’即在壓印板28沉積之分離疏水及/或低表面能鬆脫 層。特別地’成分包含表面活性劑提供對模28及壓印 層34所欲之鬆脫特性質,來降低記錄在壓印層34之圖 18 案的剝落或變形。 參照第6圖,一般認為在壓印材料中微滴36之表面 活性劑分子傾向在小於約丨秒内朝氣_液界面移動。因 此 般遇為微滴36在區域136具有較可聚合成分集中 5之區域137高的表面活性劑濃度。一般認為此係能量最 小作用的結果,其中該表面活性劑傾向移動至氣·液界 面,而其疏水端朝向氣體端。例如,一般認為該表面 活性劑之疏水端被調整由液體凸出至氣體,且該疏水 鳊被調整凸出至氣體。然而,當壓印材料接觸到壓印 1〇板的表面,一般認為在該壓印板表面上暴露之矽氫氧 基鍵造成該表面活性劑分子之親水端轉動,並接觸該 暴露之矽氫氧基鍵使該疏水端朝下,如由壓印板表面 朝外使黏著降低。一般更認為弱的層狀表面活性劑鍵 、’·。亦在該壓印板表面上形成,例如,兩⑺層表面活性 15 劑分子。 參照第2圖,由上述壓印材料提供之另一優點為板 的清潔及準備時間被縮短,因此,整個製程被簡化。 當然,該上述壓印材料可使用-先天鬆脫,諸如在 先前技藝中所熟知者。 20 改善模28之鬆脫性質之其他方法,包括預處理模28 之圖案,其係利用暴露至一處理混合劑,其包括會保 留在板28上來降低該模表面之表面能的混合劑。一混 合劑之實施例為一表面活性劑。 上述壓印材料係有用於提供大致高圖貌複製壓印 19 1324622 微影,且提供屋印板適宜之操作壽命。例如,—具有 圖案之愿印板,即使用具有4〇至50 nm圖貌之25 /25 _的模來產生極小圓案圖貌剝落或變形之 壓印。 ; 5 15 20 /吏用上述塵印材料之虔印方法實施例,包括預處理 石央I印板表面來在表面蓋生親水鍵之第—步驟,舉 例來說,但不揭限於梦氫氧基⑶领)鍵。根據本發明 一或更多具體例’該壓印板之表面被浸泡於一H2S〇及 仏02為2.5 : 1之溶液來欢姐#主 4 合及來水解该表面。此被稱為白骨化嘴 滌。 在其次步驟,該表面更由噴稀釋之表面活性劑溶液 至該壓印板表面來預處理(舉例來說,但不侷限於01% 異丙醇叫該表面活性劑有效地在該壓印板表面且 疏水端由表面向外凸出。此調整係由白骨化洗蘇表面 來促進在表面產生石夕氫氧基鍵。該壓印板表面之暴露 可由此技藝中任何已知之實質方法來達成,包括浸泡 該表面至大量之預處理溶液,利用一充滿預處理溶液 之布擦拭該表面,β哈;、—山^ 及噴預處理溶液氣流至該表面上。 預處理溶液中之ΙΡΑ在使用模28前可被蒸發。在此方 法’該ΙΡΑ在離開表面活性劑被吸收處幫助由表面移除 非所欲之污染物。因為該表面活性劑包括一疏水端及 -親水端’㈣氫氧基鍵促進表面活性劑之調整,使 該親水端"連上55石夕® ft其絲jy 夕虱氧基鍵之-0H端,且該疏水端由 表面朝向外部。在並々牛聰 . ^ 在具- 人步驟,介於該壓印板及該基板 20 1324622 間之間隙利用舉例來說,但不侷限於〜5 psi氦氣之氣體 來清洗。 在其次步驟,該印印材料包含提供至該基板之表面 活性劑’舉例來說’但不侷限於利用放置完全等距之 5下述壓印材料微滴之圖案於該基板上,或利用旋轉塗 佈,或利用此技藝中已知的一般技術中任何其他方 法。在此實施例,該基板被一轉移層所覆蓋,其頂層
為一交聯BARC材料(BARC或,,底部抗反射塗層,,為一有 機抗反射塗層,其係典型地利用旋轉塗佈製程製造)。 10該BARC層係用來避免介於壓印材料及轉移層的混 合,其混合在使用文中使用之包含低黏度成分的壓印 材料時可能特別的有問題’因為此成分對許多聚合物 具有溶解力,舉例來說,但不侷限於諸如在緊接之姓 刻製程之圖貌變形。此在圖貌厚度小至5〇至丨〇〇 nm時 15特別的有問題。其次,進行壓印微影常見之步驟,即
暴露至光化輻射來聚合該壓印材料;分離該壓印材料 及*玄基板,並選擇性地姓刻來轉移該圖貌圖案至該基 板0 一般為即使如上述使用一或更多表面活性劑預 2 〇 走 思理該壓印板之表面,被吸附至該壓印板之矽氫氧基 的—或更多表面活性劑最终會被磨除。然而,如上所 述’該表面活性劑被保留在該壓印材料中,快速地來 到。玄微滴之氣·液表面,且該壓印板之表面被再塗佈, 如同一般壓印的結果。因此’根據本發明一或更多具 21 體例,it供該表面活性劑I M g 4 p A 合液至該壓印板表面之預處 理步驟可被消除。事實 貫上,根據本發明一或受多且體 例,印板可和壓印材料接… &更夕具體 .^ . 钭接觸數次,代替提供該表 " 洛液至該表面的預處理步驟。 本發明上述之具體例為實施例。上述列舉之詳細說 明可行許多改變及改良,但仍在本發明範圍之内。因 此本發明之範圍不受限 > “·、上述之#細說明,而應 由參照附加之專利申請範圍同等完整範圍決定。 【圖式簡單說明】 第1圖為可有效進行本發明一或更多具體例之微影 系統之透試圖; 第2圖為顯示於第1圖中圖微影系統之正面簡圖; 第3圖為由第圖2顯示之堡印層包含之材料在聚合 及交聯前之簡單表示; ^圖為由第3圖顯示之材料在受到輻射後被轉化 父聯聚合性材料之簡單表示; 第5圖為顯示於第1圖中,在圖案化及固化/聚合該 壓印層後’由該壓印層空間分離的模之正面簡圖; 第6圖為根據本發明配置於一基板上的壓印材料之 正面簡圖。 【主要元件符號說明】 12".支撐架 16…支撐平台 10···微影系統 14...架 18…壓印頭 20..·移動平台 1324622
22.. .輻射源 26.. .壓印板 28a...凹處 30.. .凹處 32.. .表面 34¾ 34b...次部分 36.. .微滴 36b...點 134.. .交聯材料 23.. .電源產生器 28.. .模 28b...凸出 31…紘 34.. .壓印層 34c...邊 36a. · ·材料 36c...聚合I"生材料 136,137···區域
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Claims (1)
1324622 9R p 1 f? ^ τ 第094105242號專利申請案申請專利範圍修正本 年月 θ ·· 98年12月 十、申請專利範圍: 1. 一種用於壓印微影之壓印材料,包含: 一組成,具有一與該組成相隨的黏度,且包括一表面活性 劑、一可聚合成分及針對一刺激起反應並回應該刺激來改變該 黏度的一起始劑,該組成在液態下具有低於約100厘泊之黏 度,低於約20托(Torr)之蒸汽壓,且在固態固化態下高於約100 MPa的拉伸模數,高於約3MPa之破裂應力及高於2%之破裂時伸 長量。 10 15 2. 如申請專利範圍第1項之壓印材料,其中該表面活性劑 包含一非離子性表面活性劑。 3. 如申請專利範圍第1項之壓印材料,其中該表面活性劑 包Ί—敦化表面活性劑。 4. 如申請專利範圍第1項之壓印材料,其中該表面活性劑 包令—氟化非離子性表面活性劑。 其中該可聚合成分 曱基丙烯酸酯及二 5. 如申請專利範圍第1項之壓印材料 係一選自於基本上由環氧樹醋、丙稀酸醋 乙烯醚所組成之單體群組。 6.如申請專利範圍第1項之壓印材料,其中該可聚合成分 係一選自於一組含守可聚合成分。 20 7.如申請專利範圍第1項之壓印材料,其中該可聚合成分 為一經取代之丙烯酸酯。 8. 如申請專利範圍第1項之壓印材料,其中該可聚合成分 為含矽丙烯酸酯。 9. 如申請專利範圍第1項之壓印材料,其中該可聚合成分 24 1324622 係選自於基本上由單取代丙烯酸酯及多官能取代丙烯酸酯所構 成的經取代之丙烯酸酯群組。 ίο.如申請專利範圍第丨項之壓印材料,其中該起始劑係選 自於基本上由光起始劑及熱起始劑所組成之起始劑群組。 5 U.如申請專利範圍第1項之壓印材料,其中該起始劑係選 自於基本上由自由基光起始劑所組成之起始劑群組。 12. 如申請專利s圍第i項之壓印材料,其中在該液態下之 黏度為低於約25厘泊。 13. 如申請專利範圍第丨項之壓印材料,其中在該液態下之 10 黏度為低於約10厘泊。 14. 如申請專利範圍第1項之壓印材料,其中該液態下之黏 度為低於约5厘泊。 15. 如申請專利範圍第1項之壓印材料,其中該蒸汽壓低於 約5托。 15 I6.如申請專利範圍第1項之壓印材料,其中該蒸汽壓低於 約2托。 17. 如申請專利範圍第1項之壓印材料,其中該拉伸模數為 lOOMPa或更大。 18. 如申請專利範圍第1項之壓印材料,其中該破裂應力為 20 3MPa或更大。 19. 如申請專利範圍第1項之壓印材料,其中該破裂時伸長 量為8%或更大》 25
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Families Citing this family (183)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US7442336B2 (en) * | 2003-08-21 | 2008-10-28 | Molecular Imprints, Inc. | Capillary imprinting technique |
US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
US7365103B2 (en) * | 2002-12-12 | 2008-04-29 | Board Of Regents, The University Of Texas System | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US7307118B2 (en) * | 2004-11-24 | 2007-12-11 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
US20050160934A1 (en) | 2004-01-23 | 2005-07-28 | Molecular Imprints, Inc. | Materials and methods for imprint lithography |
US20060108710A1 (en) * | 2004-11-24 | 2006-05-25 | Molecular Imprints, Inc. | Method to reduce adhesion between a conformable region and a mold |
US8211214B2 (en) | 2003-10-02 | 2012-07-03 | Molecular Imprints, Inc. | Single phase fluid imprint lithography method |
US7906180B2 (en) * | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
KR100632632B1 (ko) * | 2004-05-28 | 2006-10-12 | 삼성전자주식회사 | 나노 결정의 다층 박막 제조 방법 및 이를 이용한유·무기 하이브리드 전기 발광 소자 |
EP1768846B1 (en) * | 2004-06-03 | 2010-08-11 | Molecular Imprints, Inc. | Fluid dispensing and drop-on-demand dispensing for nano-scale manufacturing |
US20060062922A1 (en) * | 2004-09-23 | 2006-03-23 | Molecular Imprints, Inc. | Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor |
US20060081557A1 (en) | 2004-10-18 | 2006-04-20 | Molecular Imprints, Inc. | Low-k dielectric functional imprinting materials |
US8557351B2 (en) | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
US7759407B2 (en) | 2005-07-22 | 2010-07-20 | Molecular Imprints, Inc. | Composition for adhering materials together |
US8846195B2 (en) * | 2005-07-22 | 2014-09-30 | Canon Nanotechnologies, Inc. | Ultra-thin polymeric adhesion layer |
US8808808B2 (en) * | 2005-07-22 | 2014-08-19 | Molecular Imprints, Inc. | Method for imprint lithography utilizing an adhesion primer layer |
JP5000112B2 (ja) * | 2005-09-09 | 2012-08-15 | 東京応化工業株式会社 | ナノインプリントリソグラフィによるパターン形成方法 |
US8142703B2 (en) * | 2005-10-05 | 2012-03-27 | Molecular Imprints, Inc. | Imprint lithography method |
JP4929722B2 (ja) * | 2006-01-12 | 2012-05-09 | 日立化成工業株式会社 | 光硬化型ナノプリント用レジスト材及びパターン形成法 |
US7360851B1 (en) | 2006-02-15 | 2008-04-22 | Kla-Tencor Technologies Corporation | Automated pattern recognition of imprint technology |
US8012395B2 (en) | 2006-04-18 | 2011-09-06 | Molecular Imprints, Inc. | Template having alignment marks formed of contrast material |
US8142702B2 (en) * | 2007-06-18 | 2012-03-27 | Molecular Imprints, Inc. | Solvent-assisted layer formation for imprint lithography |
US9778562B2 (en) * | 2007-11-21 | 2017-10-03 | Canon Nanotechnologies, Inc. | Porous template and imprinting stack for nano-imprint lithography |
US8945444B2 (en) * | 2007-12-04 | 2015-02-03 | Canon Nanotechnologies, Inc. | High throughput imprint based on contact line motion tracking control |
US9323143B2 (en) * | 2008-02-05 | 2016-04-26 | Canon Nanotechnologies, Inc. | Controlling template surface composition in nano-imprint lithography |
US8187515B2 (en) * | 2008-04-01 | 2012-05-29 | Molecular Imprints, Inc. | Large area roll-to-roll imprint lithography |
KR20100033704A (ko) * | 2008-09-22 | 2010-03-31 | 엘지전자 주식회사 | 미세패턴을 구비하는 스탬퍼 |
US20100072671A1 (en) * | 2008-09-25 | 2010-03-25 | Molecular Imprints, Inc. | Nano-imprint lithography template fabrication and treatment |
US8470188B2 (en) * | 2008-10-02 | 2013-06-25 | Molecular Imprints, Inc. | Nano-imprint lithography templates |
US20100090341A1 (en) * | 2008-10-14 | 2010-04-15 | Molecular Imprints, Inc. | Nano-patterned active layers formed by nano-imprint lithography |
US20100098858A1 (en) * | 2008-10-17 | 2010-04-22 | Molecular Imprints, Inc. | Fluid Dispense System Coating |
US8415010B2 (en) * | 2008-10-20 | 2013-04-09 | Molecular Imprints, Inc. | Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers |
US20100098847A1 (en) * | 2008-10-21 | 2010-04-22 | Molecular Imprints, Inc. | Drop Deposition Materials for Imprint Lithography |
US8075299B2 (en) * | 2008-10-21 | 2011-12-13 | Molecular Imprints, Inc. | Reduction of stress during template separation |
US20100095862A1 (en) * | 2008-10-22 | 2010-04-22 | Molecular Imprints, Inc. | Double Sidewall Angle Nano-Imprint Template |
US20100104852A1 (en) * | 2008-10-23 | 2010-04-29 | Molecular Imprints, Inc. | Fabrication of High-Throughput Nano-Imprint Lithography Templates |
US8652393B2 (en) | 2008-10-24 | 2014-02-18 | Molecular Imprints, Inc. | Strain and kinetics control during separation phase of imprint process |
US8361546B2 (en) * | 2008-10-30 | 2013-01-29 | Molecular Imprints, Inc. | Facilitating adhesion between substrate and patterned layer |
US20100112220A1 (en) * | 2008-11-03 | 2010-05-06 | Molecular Imprints, Inc. | Dispense system set-up and characterization |
US20100109205A1 (en) * | 2008-11-04 | 2010-05-06 | Molecular Imprints, Inc. | Photocatalytic reactions in nano-imprint lithography processes |
US20100109195A1 (en) * | 2008-11-05 | 2010-05-06 | Molecular Imprints, Inc. | Release agent partition control in imprint lithography |
US9164375B2 (en) | 2009-06-19 | 2015-10-20 | Canon Nanotechnologies, Inc. | Dual zone template chuck |
US8913230B2 (en) | 2009-07-02 | 2014-12-16 | Canon Nanotechnologies, Inc. | Chucking system with recessed support feature |
US20110031650A1 (en) | 2009-08-04 | 2011-02-10 | Molecular Imprints, Inc. | Adjacent Field Alignment |
US20110030770A1 (en) | 2009-08-04 | 2011-02-10 | Molecular Imprints, Inc. | Nanostructured organic solar cells |
US8961800B2 (en) * | 2009-08-26 | 2015-02-24 | Board Of Regents, The University Of Texas System | Functional nanoparticles |
US20110048518A1 (en) * | 2009-08-26 | 2011-03-03 | Molecular Imprints, Inc. | Nanostructured thin film inorganic solar cells |
JP5564383B2 (ja) * | 2009-09-30 | 2014-07-30 | 富士フイルム株式会社 | インプリント用硬化性組成物、パターン形成方法およびパターン |
US20110084417A1 (en) | 2009-10-08 | 2011-04-14 | Molecular Imprints, Inc. | Large area linear array nanoimprinting |
WO2011066450A2 (en) | 2009-11-24 | 2011-06-03 | Molecular Imprints, Inc. | Adhesion layers in nanoimprint lithography |
US20110140304A1 (en) | 2009-12-10 | 2011-06-16 | Molecular Imprints, Inc. | Imprint lithography template |
WO2011094317A2 (en) | 2010-01-26 | 2011-08-04 | Molecular Imprints, Inc. | Micro-conformal templates for nanoimprint lithography |
US8980751B2 (en) | 2010-01-27 | 2015-03-17 | Canon Nanotechnologies, Inc. | Methods and systems of material removal and pattern transfer |
US8691134B2 (en) | 2010-01-28 | 2014-04-08 | Molecular Imprints, Inc. | Roll-to-roll imprint lithography and purging system |
WO2011094015A1 (en) | 2010-01-28 | 2011-08-04 | Molecular Imprints, Inc. | Solar cell fabrication by nanoimprint lithography |
JP2013517943A (ja) | 2010-01-29 | 2013-05-20 | モレキュラー・インプリンツ・インコーポレーテッド | ナノ粒子を形成するためのナノインプリントリソグラフィプロセス |
US20110189329A1 (en) * | 2010-01-29 | 2011-08-04 | Molecular Imprints, Inc. | Ultra-Compliant Nanoimprint Lithography Template |
JP5769734B2 (ja) | 2010-02-05 | 2015-08-26 | モレキュラー・インプリンツ・インコーポレーテッド | 高コントラスト位置合わせマークを有するテンプレート |
JP5848263B2 (ja) | 2010-02-09 | 2016-01-27 | モレキュラー・インプリンツ・インコーポレーテッド | ナノインプリントのためのプロセスガス閉じ込め |
JP5491931B2 (ja) * | 2010-03-30 | 2014-05-14 | 富士フイルム株式会社 | ナノインプリント方法およびモールド製造方法 |
TWI576229B (zh) | 2010-04-27 | 2017-04-01 | 分子壓模公司 | 奈米壓印之安全分離技術 |
WO2011143327A2 (en) | 2010-05-11 | 2011-11-17 | Molecular Imprints, Inc. | Nanostructured solar cell |
US20130099423A1 (en) | 2010-07-02 | 2013-04-25 | Tokuyama Corporation | Photocurable composition for imprint and method for formation of pattern using the composition |
US8891080B2 (en) | 2010-07-08 | 2014-11-18 | Canon Nanotechnologies, Inc. | Contaminate detection and substrate cleaning |
US8541053B2 (en) | 2010-07-08 | 2013-09-24 | Molecular Imprints, Inc. | Enhanced densification of silicon oxide layers |
WO2012022561A1 (en) * | 2010-08-16 | 2012-02-23 | Asml Netherlands B.V. | Inspection method for imprint lithography and apparatus therefor |
EP2618978B1 (en) | 2010-09-24 | 2016-11-09 | Canon Nanotechnologies, Inc. | High contrast alignment marks through multiple stage imprinting |
EP2635522A4 (en) | 2010-11-05 | 2014-06-11 | Molecular Imprints Inc | NANOPRÄGUNGS-LITHOGRAPHIEVERSTELLUNG FUNCTIONAL NANOPARTICLE WITH TWO SEPARATE LAYERS |
WO2012061816A2 (en) | 2010-11-05 | 2012-05-10 | Molecular Imprints, Inc. | Patterning of non-convex shaped nanostructures |
US8926888B2 (en) | 2011-02-25 | 2015-01-06 | Board Of Regents, The University Of Texas System | Fluorinated silazane release agents in nanoimprint lithography |
JP2014103135A (ja) * | 2011-03-10 | 2014-06-05 | Toyo Gosei Kogyo Kk | 光硬化物の製造方法 |
JP5761860B2 (ja) * | 2011-03-25 | 2015-08-12 | 富士フイルム株式会社 | インプリントシステム、及びインプリント方法 |
US20120261849A1 (en) | 2011-04-14 | 2012-10-18 | Canon Kabushiki Kaisha | Imprint apparatus, and article manufacturing method using same |
WO2012149029A2 (en) | 2011-04-25 | 2012-11-01 | Molecular Imprints, Inc. | Optically absorptive material for alignment marks |
JP5611912B2 (ja) * | 2011-09-01 | 2014-10-22 | 株式会社東芝 | インプリント用レジスト材料、パターン形成方法、及びインプリント装置 |
JP5806903B2 (ja) * | 2011-09-30 | 2015-11-10 | 富士フイルム株式会社 | ナノインプリント方法およびそれに用いられるレジスト組成物 |
WO2013096459A1 (en) | 2011-12-19 | 2013-06-27 | Molecular Imprints, Inc. | Fabrication of seamless large area master templates for imprint lithography |
JP5959865B2 (ja) | 2012-02-09 | 2016-08-02 | キヤノン株式会社 | 光硬化物及びその製造方法 |
US9616614B2 (en) | 2012-02-22 | 2017-04-11 | Canon Nanotechnologies, Inc. | Large area imprint lithography |
JP5846974B2 (ja) | 2012-03-13 | 2016-01-20 | 富士フイルム株式会社 | 光インプリント用硬化性組成物、パターン形成方法およびパターン |
JP6071255B2 (ja) * | 2012-06-04 | 2017-02-01 | キヤノン株式会社 | 光硬化物 |
US20130337176A1 (en) * | 2012-06-19 | 2013-12-19 | Seagate Technology Llc | Nano-scale void reduction |
JP6400074B2 (ja) | 2013-03-15 | 2018-10-03 | キャノン・ナノテクノロジーズ・インコーポレーテッド | 金属又は酸化物コーティングを有する再使用可能なポリマーテンプレートによるナノインプリンティング |
WO2015006695A1 (en) | 2013-07-12 | 2015-01-15 | Canon Nanotechnologies, Inc. | Drop pattern generation for imprint lithography with directionally-patterned templates |
TWI665513B (zh) | 2013-11-08 | 2019-07-11 | 美商佳能奈米科技股份有限公司 | 用於經改良重疊校正之低接觸壓印微影樣板卡盤系統 |
US9155201B2 (en) | 2013-12-03 | 2015-10-06 | Eastman Kodak Company | Preparation of articles with conductive micro-wire pattern |
SG11201604509UA (en) | 2013-12-10 | 2016-07-28 | Canon Nanotechnologies Inc | Imprint lithography template and method for zero-gap imprinting |
KR102243630B1 (ko) | 2013-12-30 | 2021-04-23 | 캐논 나노테크놀로지즈 인코퍼레이티드 | 20nm 이하 특징부의 균일한 임프린트 패턴 전사 방법 |
TWI690482B (zh) | 2013-12-31 | 2020-04-11 | 佳能奈米科技股份有限公司 | 用於局部區域壓印之非對稱模板形狀調節 |
CN107075661B (zh) * | 2014-09-26 | 2020-03-17 | 韩国机械研究院 | 形成有多个纳米间隙的基底及其制备方法 |
CN107111204B (zh) | 2014-09-29 | 2021-02-09 | 奇跃公司 | 用于从波导中输出不同波长光的架构和方法 |
AT516558B1 (de) | 2014-12-10 | 2018-02-15 | Joanneum Res Forschungsgmbh | Prägelack, Verfahren zum Prägen sowie mit dem Prägelack beschichtete Substratoberfläche |
CN107530034A (zh) | 2015-03-16 | 2018-01-02 | 奇跃公司 | 增强现实脉冲血氧定量法 |
KR102359038B1 (ko) | 2015-06-15 | 2022-02-04 | 매직 립, 인코포레이티드 | 멀티플렉싱된 광 스트림들을 인-커플링하기 위한 광학 엘리먼트들을 가진 디스플레이 시스템 |
US20170066208A1 (en) | 2015-09-08 | 2017-03-09 | Canon Kabushiki Kaisha | Substrate pretreatment for reducing fill time in nanoimprint lithography |
US10488753B2 (en) | 2015-09-08 | 2019-11-26 | Canon Kabushiki Kaisha | Substrate pretreatment and etch uniformity in nanoimprint lithography |
US10131134B2 (en) | 2015-10-30 | 2018-11-20 | Canon Kabushiki Kaisha | System and method for discharging electrostatic charge in nanoimprint lithography processes |
US10211051B2 (en) | 2015-11-13 | 2019-02-19 | Canon Kabushiki Kaisha | Method of reverse tone patterning |
US10654216B2 (en) | 2016-03-30 | 2020-05-19 | Canon Kabushiki Kaisha | System and methods for nanoimprint lithography |
US10134588B2 (en) | 2016-03-31 | 2018-11-20 | Canon Kabushiki Kaisha | Imprint resist and substrate pretreatment for reducing fill time in nanoimprint lithography |
US10620539B2 (en) | 2016-03-31 | 2020-04-14 | Canon Kabushiki Kaisha | Curing substrate pretreatment compositions in nanoimprint lithography |
US10095106B2 (en) | 2016-03-31 | 2018-10-09 | Canon Kabushiki Kaisha | Removing substrate pretreatment compositions in nanoimprint lithography |
KR20220040511A (ko) | 2016-04-08 | 2022-03-30 | 매직 립, 인코포레이티드 | 가변 포커스 렌즈 엘리먼트들을 가진 증강 현실 시스템들 및 방법들 |
WO2017195586A1 (ja) | 2016-05-11 | 2017-11-16 | Dic株式会社 | 光インプリント用硬化性組成物及びそれを用いたパターン転写方法 |
WO2017196999A1 (en) | 2016-05-12 | 2017-11-16 | Magic Leap, Inc. | Wavelength multiplexing in waveguides |
US10509313B2 (en) | 2016-06-28 | 2019-12-17 | Canon Kabushiki Kaisha | Imprint resist with fluorinated photoinitiator and substrate pretreatment for reducing fill time in nanoimprint lithography |
US10035296B2 (en) | 2016-10-13 | 2018-07-31 | Canon Kabushiki Kaisha | Methods for controlling spread of imprint material |
US10627715B2 (en) | 2016-10-31 | 2020-04-21 | Canon Kabushiki Kaisha | Method for separating a nanoimprint template from a substrate |
US11454883B2 (en) | 2016-11-14 | 2022-09-27 | Canon Kabushiki Kaisha | Template replication |
JP7237830B2 (ja) | 2016-11-18 | 2023-03-13 | マジック リープ, インコーポレイテッド | 交差格子を用いた導波管光マルチプレクサ |
KR102506485B1 (ko) | 2016-11-18 | 2023-03-03 | 매직 립, 인코포레이티드 | 넓은 입사 각도 범위들의 광을 방향전환시키기 위한 다중층 액정 회절 격자들 |
KR102533671B1 (ko) | 2016-11-18 | 2023-05-16 | 매직 립, 인코포레이티드 | 공간 가변적 액정 회절 격자들 |
US11067860B2 (en) | 2016-11-18 | 2021-07-20 | Magic Leap, Inc. | Liquid crystal diffractive devices with nano-scale pattern and methods of manufacturing the same |
US10969680B2 (en) | 2016-11-30 | 2021-04-06 | Canon Kabushiki Kaisha | System and method for adjusting a position of a template |
WO2018106963A1 (en) | 2016-12-08 | 2018-06-14 | Magic Leap, Inc. | Diffractive devices based on cholesteric liquid crystal |
CN110291453B (zh) | 2016-12-14 | 2022-11-01 | 奇跃公司 | 使用具有表面对准图案的软压印复制对液晶图案化 |
US10578984B2 (en) | 2016-12-20 | 2020-03-03 | Canon Kabushiki Kaisha | Adaptive chucking system |
US10288999B2 (en) * | 2016-12-20 | 2019-05-14 | Canon Kabushiki Kaisha | Methods for controlling extrusions during imprint template replication processes |
US10991582B2 (en) | 2016-12-21 | 2021-04-27 | Canon Kabushiki Kaisha | Template for imprint lithography including a recession, an apparatus of using the template, and a method of fabricating an article |
US10712660B2 (en) | 2016-12-21 | 2020-07-14 | Canon Kabushiki Kaisha | Template for imprint lithography including a recession and an apparatus and method of using the template |
US10371896B2 (en) | 2016-12-22 | 2019-08-06 | Magic Leap, Inc. | Color separation in planar waveguides using dichroic filters |
WO2018136892A1 (en) | 2017-01-23 | 2018-07-26 | Magic Leap, Inc. | Eyepiece for virtual, augmented, or mixed reality systems |
CN110546549B (zh) | 2017-02-23 | 2022-06-07 | 奇跃公司 | 具有可变屈光力反射器的显示系统 |
US10079152B1 (en) | 2017-02-24 | 2018-09-18 | Canon Kabushiki Kaisha | Method for forming planarized etch mask structures over existing topography |
US9971249B1 (en) | 2017-02-27 | 2018-05-15 | Canon Kabushiki Kaisha | Method and system for controlled ultraviolet light exposure |
US10317793B2 (en) | 2017-03-03 | 2019-06-11 | Canon Kabushiki Kaisha | Substrate pretreatment compositions for nanoimprint lithography |
US11073695B2 (en) | 2017-03-21 | 2021-07-27 | Magic Leap, Inc. | Eye-imaging apparatus using diffractive optical elements |
US10303049B2 (en) | 2017-03-22 | 2019-05-28 | Canon Kabushiki Kaisha | Reducing electric charge in imprint lithography |
US10534259B2 (en) | 2017-03-28 | 2020-01-14 | Canon Kabushiki Kaisha | Method and system for imprint force control |
US10996560B2 (en) | 2017-07-31 | 2021-05-04 | Canon Kabushiki Kaisha | Real-time correction of template deformation in nanoimprint lithography |
US10866510B2 (en) | 2017-07-31 | 2020-12-15 | Canon Kabushiki Kaisha | Overlay improvement in nanoimprint lithography |
US10580659B2 (en) | 2017-09-14 | 2020-03-03 | Canon Kabushiki Kaisha | Planarization process and apparatus |
EP3685215B1 (en) | 2017-09-21 | 2024-01-03 | Magic Leap, Inc. | Augmented reality display with waveguide configured to capture images of eye and/or environment |
US11448958B2 (en) | 2017-09-21 | 2022-09-20 | Canon Kabushiki Kaisha | System and method for controlling the placement of fluid resist droplets |
US10935883B2 (en) | 2017-09-29 | 2021-03-02 | Canon Kabushiki Kaisha | Nanoimprint template with light blocking material and method of fabrication |
US10895806B2 (en) | 2017-09-29 | 2021-01-19 | Canon Kabushiki Kaisha | Imprinting method and apparatus |
US11036130B2 (en) | 2017-10-19 | 2021-06-15 | Canon Kabushiki Kaisha | Drop placement evaluation |
US10788749B2 (en) | 2017-11-30 | 2020-09-29 | Canon Kabushiki Kaisha | System and method for improving the throughput of a nanoimprint system |
US10663869B2 (en) | 2017-12-11 | 2020-05-26 | Canon Kabushiki Kaisha | Imprint system and imprinting process with spatially non-uniform illumination |
AU2018386296B2 (en) | 2017-12-15 | 2023-11-23 | Magic Leap, Inc. | Eyepieces for augmented reality display system |
US10409178B2 (en) * | 2017-12-18 | 2019-09-10 | Canon Kabushiki Kaisha | Alignment control in nanoimprint lithography based on real-time system identification |
US10996561B2 (en) | 2017-12-26 | 2021-05-04 | Canon Kabushiki Kaisha | Nanoimprint lithography with a six degrees-of-freedom imprint head module |
US11194247B2 (en) | 2018-01-31 | 2021-12-07 | Canon Kabushiki Kaisha | Extrusion control by capillary force reduction |
TWI799550B (zh) | 2018-03-27 | 2023-04-21 | 日商富士軟片股份有限公司 | 壓印用硬化性組成物、脫模劑、硬化物、圖案形成方法和微影方法 |
EP3547026B1 (en) * | 2018-03-28 | 2023-11-29 | CSEM Centre Suisse d'Electronique et de Microtechnique SA | Method for producing a metal stamp for embossing a nano- and/or microstructure on a metal device as well as uses thereof and devices made therewith |
US11249405B2 (en) | 2018-04-30 | 2022-02-15 | Canon Kabushiki Kaisha | System and method for improving the performance of a nanoimprint system |
US10739675B2 (en) | 2018-05-31 | 2020-08-11 | Canon Kabushiki Kaisha | Systems and methods for detection of and compensation for malfunctioning droplet dispensing nozzles |
US10921706B2 (en) | 2018-06-07 | 2021-02-16 | Canon Kabushiki Kaisha | Systems and methods for modifying mesa sidewalls |
US10990004B2 (en) | 2018-07-18 | 2021-04-27 | Canon Kabushiki Kaisha | Photodissociation frame window, systems including a photodissociation frame window, and methods of using a photodissociation frame window |
US11294277B2 (en) | 2018-07-25 | 2022-04-05 | Canon Kabushiki Kaisha | Process of imprinting a substrate with fluid control features |
JP2020035924A (ja) * | 2018-08-30 | 2020-03-05 | キオクシア株式会社 | 原版 |
US10976657B2 (en) | 2018-08-31 | 2021-04-13 | Canon Kabushiki Kaisha | System and method for illuminating edges of an imprint field with a gradient dosage |
US11131923B2 (en) | 2018-10-10 | 2021-09-28 | Canon Kabushiki Kaisha | System and method of assessing surface quality by optically analyzing dispensed drops |
EP3884337A4 (en) | 2018-11-20 | 2022-08-17 | Magic Leap, Inc. | EYEPIECES FOR AN AUGMENTED REALITY DISPLAY SYSTEM |
US11281095B2 (en) | 2018-12-05 | 2022-03-22 | Canon Kabushiki Kaisha | Frame curing template and system and method of using the frame curing template |
US10754078B2 (en) | 2018-12-20 | 2020-08-25 | Canon Kabushiki Kaisha | Light source, a shaping system using the light source and an article manufacturing method |
US11243466B2 (en) | 2019-01-31 | 2022-02-08 | Canon Kabushiki Kaisha | Template with mass velocity variation features, nanoimprint lithography apparatus that uses the template, and methods that use the template |
US11442359B2 (en) | 2019-03-11 | 2022-09-13 | Canon Kabushiki Kaisha | Method of separating a template from a shaped film on a substrate |
US11209730B2 (en) | 2019-03-14 | 2021-12-28 | Canon Kabushiki Kaisha | Methods of generating drop patterns, systems for shaping films with the drop pattern, and methods of manufacturing an article with the drop pattern |
KR20210132100A (ko) | 2019-03-22 | 2021-11-03 | 후지필름 가부시키가이샤 | 패턴 형성용 조성물, 키트, 패턴의 제조 방법, 패턴, 및, 반도체 소자의 제조 방법 |
US11181819B2 (en) | 2019-05-31 | 2021-11-23 | Canon Kabushiki Kaisha | Frame curing method for extrusion control |
WO2020246405A1 (ja) | 2019-06-07 | 2020-12-10 | 富士フイルム株式会社 | パターン形成用組成物、硬化膜、積層体、パターンの製造方法および半導体素子の製造方法 |
US11402749B2 (en) | 2019-06-19 | 2022-08-02 | Canon Kabushiki Kaisha | Drop pattern correction for nano-fabrication |
WO2020257469A1 (en) | 2019-06-20 | 2020-12-24 | Magic Leap, Inc. | Eyepieces for augmented reality display system |
US11373861B2 (en) | 2019-07-05 | 2022-06-28 | Canon Kabushiki Kaisha | System and method of cleaning mesa sidewalls of a template |
US11164302B2 (en) | 2019-08-08 | 2021-11-02 | Canon Kabushiki Kaisha | Systems and methods for classifying images of an imprinted film |
US11549020B2 (en) | 2019-09-23 | 2023-01-10 | Canon Kabushiki Kaisha | Curable composition for nano-fabrication |
US11327409B2 (en) | 2019-10-23 | 2022-05-10 | Canon Kabushiki Kaisha | Systems and methods for curing an imprinted field |
US11429022B2 (en) | 2019-10-23 | 2022-08-30 | Canon Kabushiki Kaisha | Systems and methods for curing a shaped film |
US11215921B2 (en) | 2019-10-31 | 2022-01-04 | Canon Kabushiki Kaisha | Residual layer thickness compensation in nano-fabrication by modified drop pattern |
US11550216B2 (en) | 2019-11-25 | 2023-01-10 | Canon Kabushiki Kaisha | Systems and methods for curing a shaped film |
US11366384B2 (en) | 2019-12-18 | 2022-06-21 | Canon Kabushiki Kaisha | Nanoimprint lithography system and method for adjusting a radiation pattern that compensates for slippage of a template |
US11567401B2 (en) | 2019-12-20 | 2023-01-31 | Canon Kabushiki Kaisha | Nanofabrication method with correction of distortion within an imprint system |
US11126079B1 (en) | 2020-04-09 | 2021-09-21 | Canon Kabushiki Kaisha | Nano-fabrication system with cleaning system for cleaning a faceplate of a dispenser and method of cleaning the faceplate |
US11262651B2 (en) | 2020-05-28 | 2022-03-01 | Canon Kabushiki Kaisha | System for detecting accumulated material on a faceplate of a dispenser and method of inspecting the faceplate |
US11262652B2 (en) | 2020-06-25 | 2022-03-01 | Canon Kabushiki Kaisha | Nanofabrication method with correction of distortion within an imprint system |
US11774849B2 (en) | 2020-09-22 | 2023-10-03 | Canon Kabushiki Kaisha | Method and system for adjusting edge positions of a drop pattern |
US11994797B2 (en) | 2020-10-28 | 2024-05-28 | Canon Kabushiki Kaisha | System and method for shaping a film with a scaled calibration measurement parameter |
US11747731B2 (en) | 2020-11-20 | 2023-09-05 | Canon Kabishiki Kaisha | Curing a shaped film using multiple images of a spatial light modulator |
US11815811B2 (en) | 2021-03-23 | 2023-11-14 | Canon Kabushiki Kaisha | Magnification ramp scheme to mitigate template slippage |
US11614693B2 (en) | 2021-06-30 | 2023-03-28 | Canon Kabushiki Kaisha | Method of determining the initial contact point for partial fields and method of shaping a surface |
CN117289548B (zh) * | 2023-11-27 | 2024-01-26 | 青岛天仁微纳科技有限责任公司 | 一种用于微细线栅制备的高精压印装置及方法 |
Family Cites Families (346)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US877036A (en) * | 1907-11-04 | 1908-01-21 | United Shoe Machinery Ab | Inseam-trimming machine. |
US3527062A (en) | 1968-09-25 | 1970-09-08 | Singer General Precision | Universal joint flexure hinge |
US3810874A (en) | 1969-03-10 | 1974-05-14 | Minnesota Mining & Mfg | Polymers prepared from poly(perfluoro-alkylene oxide) compounds |
US3783520A (en) * | 1970-09-28 | 1974-01-08 | Bell Telephone Labor Inc | High accuracy alignment procedure utilizing moire patterns |
US3807027A (en) | 1972-03-31 | 1974-04-30 | Johns Manville | Method of forming the bell end of a bell and spigot joint |
US3807029A (en) * | 1972-09-05 | 1974-04-30 | Bendix Corp | Method of making a flexural pivot |
US3811665A (en) | 1972-09-05 | 1974-05-21 | Bendix Corp | Flexural pivot with diaphragm means |
US3807087A (en) * | 1972-10-10 | 1974-04-30 | Mattel Inc | Automatic battery cut-off system for electric motor-driven toy vehicles using rechargeable batteries |
US3919351A (en) | 1973-08-29 | 1975-11-11 | Ppg Industries Inc | Composition useful in making extensible films |
FR2325018A1 (fr) * | 1975-06-23 | 1977-04-15 | Ibm | Dispositif de mesure d'intervalle pour definir la distance entre deux faces ou plus |
IT1068535B (it) | 1975-11-03 | 1985-03-21 | Ibm | Apparecchio e processo elettrolito grafico |
US4062600A (en) | 1976-04-05 | 1977-12-13 | Litton Systems, Inc. | Dual-gimbal gyroscope flexure suspension |
US4098001A (en) | 1976-10-13 | 1978-07-04 | The Charles Stark Draper Laboratory, Inc. | Remote center compliance system |
DE2800476A1 (de) | 1977-01-07 | 1978-07-13 | Instruments Sa | Verfahren zur duplizierung einer optischen flaeche sowie so hergestelltes beugungsgitter |
US4155169A (en) | 1978-03-16 | 1979-05-22 | The Charles Stark Draper Laboratory, Inc. | Compliant assembly system device |
US4251277A (en) * | 1978-04-24 | 1981-02-17 | Sws Silicones Corporation | Compositions containing thiofunctional polysiloxanes |
US4201800A (en) | 1978-04-28 | 1980-05-06 | International Business Machines Corp. | Hardened photoresist master image mask process |
JPS6053675B2 (ja) | 1978-09-20 | 1985-11-27 | 富士写真フイルム株式会社 | スピンコ−テイング方法 |
US4202107A (en) | 1978-10-23 | 1980-05-13 | Watson Paul C | Remote axis admittance system |
US4326805A (en) * | 1980-04-11 | 1982-04-27 | Bell Telephone Laboratories, Incorporated | Method and apparatus for aligning mask and wafer members |
US4337579A (en) | 1980-04-16 | 1982-07-06 | The Charles Stark Draper Laboratory, Inc. | Deformable remote center compliance device |
JPS573875A (en) | 1980-06-11 | 1982-01-09 | Tamura Kaken Kk | Photopolymerizable ink composition |
US4355469A (en) | 1980-11-28 | 1982-10-26 | The Charles Stark Draper Laboratory, Inc. | Folded remote center compliance device |
SE454519B (sv) * | 1981-09-11 | 1988-05-09 | Inst Mekhaniki Metallopolimern | Sjevsmorjande kompositmaterial |
US4414750A (en) | 1981-10-19 | 1983-11-15 | The Charles Stark Draper Laboratory, Inc. | Single stage remote center compliance device |
DE3208081A1 (de) | 1982-03-06 | 1983-09-08 | Braun Ag, 6000 Frankfurt | Verfahren zur herstellung einer siebartigen scherfolie fuer einen elektrisch betriebenen trockenrasierapparat mit erhebungen auf ihrer der haut zugewandten flaeche |
US4617238A (en) | 1982-04-01 | 1986-10-14 | General Electric Company | Vinyloxy-functional organopolysiloxane compositions |
US4426247A (en) | 1982-04-12 | 1984-01-17 | Nippon Telegraph & Telephone Public Corporation | Method for forming micropattern |
US4440804A (en) * | 1982-08-02 | 1984-04-03 | Fairchild Camera & Instrument Corporation | Lift-off process for fabricating self-aligned contacts |
US4544572A (en) | 1982-09-07 | 1985-10-01 | Minnesota Mining And Manufacturing Company | Coated ophthalmic lenses and method for coating the same |
JPS5972727A (ja) | 1982-10-19 | 1984-04-24 | Matsushita Electric Ind Co Ltd | 位置合わせ用テ−ブル |
US4451507A (en) | 1982-10-29 | 1984-05-29 | Rca Corporation | Automatic liquid dispensing apparatus for spinning surface of uniform thickness |
FR2538923A1 (fr) | 1982-12-30 | 1984-07-06 | Thomson Csf | Procede et dispositif d'alignement optique de motifs dans deux plans rapproches dans un appareil d'exposition comprenant une source de rayonnement divergent |
US4514439A (en) * | 1983-09-16 | 1985-04-30 | Rohm And Haas Company | Dust cover |
US4507331A (en) * | 1983-12-12 | 1985-03-26 | International Business Machines Corporation | Dry process for forming positive tone micro patterns |
US4512848A (en) * | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
US4517337A (en) | 1984-02-24 | 1985-05-14 | General Electric Company | Room temperature vulcanizable organopolysiloxane compositions and method for making |
US4552833A (en) | 1984-05-14 | 1985-11-12 | International Business Machines Corporation | Radiation sensitive and oxygen plasma developable resist |
US4614667A (en) | 1984-05-21 | 1986-09-30 | Minnesota Mining And Manufacturing Company | Composite low surface energy liner of perfluoropolyether |
EP0166363B1 (en) | 1984-06-26 | 1991-08-07 | Asahi Glass Company Ltd. | Low reflectance transparent material having antisoiling properties |
US4694703A (en) | 1984-06-28 | 1987-09-22 | Lear Siegler, Inc. | Circumferentially oriented flexure suspension |
JPS61116358A (ja) * | 1984-11-09 | 1986-06-03 | Mitsubishi Electric Corp | フオトマスク材料 |
US4908298A (en) * | 1985-03-19 | 1990-03-13 | International Business Machines Corporation | Method of creating patterned multilayer films for use in production of semiconductor circuits and systems |
EP0228671A1 (en) | 1985-12-23 | 1987-07-15 | General Electric Company | Method for the production of a coated substrate with controlled surface characteristics |
US4657845A (en) * | 1986-01-14 | 1987-04-14 | International Business Machines Corporation | Positive tone oxygen plasma developable photoresist |
US4692205A (en) | 1986-01-31 | 1987-09-08 | International Business Machines Corporation | Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings |
US4724222A (en) * | 1986-04-28 | 1988-02-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Wafer chuck comprising a curved reference surface |
US4737425A (en) * | 1986-06-10 | 1988-04-12 | International Business Machines Corporation | Patterned resist and process |
KR900004269B1 (ko) | 1986-06-11 | 1990-06-18 | 가부시기가이샤 도시바 | 제 1물체와 제 2 물체와의 위치 맞추는 방법 및 장치 |
US4929083A (en) | 1986-06-19 | 1990-05-29 | Xerox Corporation | Focus and overlay characterization and optimization for photolithographic exposure |
DE3760773D1 (en) | 1986-07-25 | 1989-11-16 | Oki Electric Ind Co Ltd | Negative resist material, method for its manufacture and method for using it |
JPS6376330A (ja) | 1986-09-18 | 1988-04-06 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
FR2604553A1 (fr) | 1986-09-29 | 1988-04-01 | Rhone Poulenc Chimie | Substrat polymere rigide pour disque optique et les disques optiques obtenus a partir dudit substrat |
US4707218A (en) | 1986-10-28 | 1987-11-17 | International Business Machines Corporation | Lithographic image size reduction |
JPS63162132A (ja) | 1986-12-26 | 1988-07-05 | Nippon Thompson Co Ltd | Xyテ−ブル |
US4931351A (en) | 1987-01-12 | 1990-06-05 | Eastman Kodak Company | Bilayer lithographic process |
US5736424A (en) * | 1987-02-27 | 1998-04-07 | Lucent Technologies Inc. | Device fabrication involving planarization |
US6391798B1 (en) | 1987-02-27 | 2002-05-21 | Agere Systems Guardian Corp. | Process for planarization a semiconductor substrate |
US4731155A (en) * | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US4808511A (en) * | 1987-05-19 | 1989-02-28 | International Business Machines Corporation | Vapor phase photoresist silylation process |
KR930000293B1 (ko) | 1987-10-26 | 1993-01-15 | 마쯔시다덴기산교 가부시기가이샤 | 미세패턴형성방법 |
JPH01163027A (ja) * | 1987-12-21 | 1989-06-27 | Matsushita Electric Ind Co Ltd | 光学素子の成形方法およびその装置 |
US5028366A (en) | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
DE3805631A1 (de) | 1988-02-24 | 1989-09-07 | Teldix Gmbh | Drehschwingungsantrieb |
US4883561A (en) | 1988-03-29 | 1989-11-28 | Bell Communications Research, Inc. | Lift-off and subsequent bonding of epitaxial films |
US4846931A (en) | 1988-03-29 | 1989-07-11 | Bell Communications Research, Inc. | Method for lifting-off epitaxial films |
US4891303A (en) * | 1988-05-26 | 1990-01-02 | Texas Instruments Incorporated | Trilayer microlithographic process using a silicon-based resist as the middle layer |
JPH0625235B2 (ja) * | 1988-06-21 | 1994-04-06 | 信越化学工業株式会社 | 硬化性弾性組成物 |
JPH0269936A (ja) | 1988-07-28 | 1990-03-08 | Siemens Ag | 半導体材料上の樹脂構造の形成方法 |
US5108875A (en) * | 1988-07-29 | 1992-04-28 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
US4921778A (en) | 1988-07-29 | 1990-05-01 | Shipley Company Inc. | Photoresist pattern fabrication employing chemically amplified metalized material |
EP0355496A3 (en) | 1988-08-15 | 1990-10-10 | Sumitomo Heavy Industries Co., Ltd. | Position detector employing a sector fresnel zone plate |
JP2546350B2 (ja) | 1988-09-09 | 1996-10-23 | キヤノン株式会社 | 位置合わせ装置 |
US4964945A (en) | 1988-12-09 | 1990-10-23 | Minnesota Mining And Manufacturing Company | Lift off patterning process on a flexible substrate |
US5439766A (en) | 1988-12-30 | 1995-08-08 | International Business Machines Corporation | Composition for photo imaging |
CA2010169A1 (en) | 1989-02-21 | 1990-08-21 | Masakazu Uekita | Multi-layer resist |
US4999280A (en) * | 1989-03-17 | 1991-03-12 | International Business Machines Corporation | Spray silylation of photoresist images |
US5169494A (en) | 1989-03-27 | 1992-12-08 | Matsushita Electric Industrial Co., Ltd. | Fine pattern forming method |
JP3001607B2 (ja) | 1989-04-24 | 2000-01-24 | シーメンス、アクチエンゲゼルシヤフト | 二層法における寸法安定な構造転写方法 |
DE59010728D1 (de) | 1989-04-24 | 1997-07-31 | Siemens Ag | Verfahren zur Erzeugung ätzresistenter Strukturen |
US5110514A (en) | 1989-05-01 | 1992-05-05 | Soane Technologies, Inc. | Controlled casting of a shrinkable material |
US5053318A (en) | 1989-05-18 | 1991-10-01 | Shipley Company Inc. | Plasma processing with metal mask integration |
CA2011927C (en) | 1989-06-02 | 1996-12-24 | Alan Lee Sidman | Microlithographic method for producing thick, vertically-walled photoresist patterns |
US4919748A (en) * | 1989-06-30 | 1990-04-24 | At&T Bell Laboratories | Method for tapered etching |
JP2704001B2 (ja) | 1989-07-18 | 1998-01-26 | キヤノン株式会社 | 位置検出装置 |
US5151754A (en) | 1989-10-06 | 1992-09-29 | Kabushiki Kaisha Toshiba | Method and an apparatus for measuring a displacement between two objects and a method and an apparatus for measuring a gap distance between two objects |
US5362606A (en) | 1989-10-18 | 1994-11-08 | Massachusetts Institute Of Technology | Positive resist pattern formation through focused ion beam exposure and surface barrier silylation |
US5139925A (en) | 1989-10-18 | 1992-08-18 | Massachusetts Institute Of Technology | Surface barrier silylation of novolak film without photoactive additive patterned with 193 nm excimer laser |
US5204381A (en) * | 1990-02-13 | 1993-04-20 | The United States Of America As Represented By The United States Department Of Energy | Hybrid sol-gel optical materials |
JP3197010B2 (ja) * | 1990-03-05 | 2001-08-13 | 株式会社東芝 | 間隔設定方法及び間隔設定装置 |
US5073230A (en) | 1990-04-17 | 1991-12-17 | Arizona Board Of Regents Acting On Behalf Of Arizona State University | Means and methods of lifting and relocating an epitaxial device layer |
US5328810A (en) | 1990-05-07 | 1994-07-12 | Micron Technology, Inc. | Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process |
US5149592A (en) * | 1990-05-09 | 1992-09-22 | Avery Dennison Corporation | Ultraviolet radiation curable clearcoat |
JP2586692B2 (ja) | 1990-05-24 | 1997-03-05 | 松下電器産業株式会社 | パターン形成材料およびパターン形成方法 |
JP2524436B2 (ja) | 1990-09-18 | 1996-08-14 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 表面処理方法 |
DE4029912A1 (de) | 1990-09-21 | 1992-03-26 | Philips Patentverwaltung | Verfahren zur bildung mindestens eines grabens in einer substratschicht |
US5314772A (en) | 1990-10-09 | 1994-05-24 | Arizona Board Of Regents | High resolution, multi-layer resist for microlithography and method therefor |
US5126006A (en) | 1990-10-30 | 1992-06-30 | International Business Machines Corp. | Plural level chip masking |
US5072126A (en) | 1990-10-31 | 1991-12-10 | International Business Machines Corporation | Promixity alignment using polarized illumination and double conjugate projection lens |
US6174931B1 (en) * | 1991-02-28 | 2001-01-16 | 3M Innovative Properties Company | Multi-stage irradiation process for production of acrylic based compositions and compositions made thereby |
JPH04327939A (ja) * | 1991-04-26 | 1992-11-17 | Matsushita Electric Ind Co Ltd | 樹脂製凹版およびその製造方法 |
US5240878A (en) | 1991-04-26 | 1993-08-31 | International Business Machines Corporation | Method for forming patterned films on a substrate |
US5212147A (en) | 1991-05-15 | 1993-05-18 | Hewlett-Packard Company | Method of forming a patterned in-situ high Tc superconductive film |
DE69229924T2 (de) | 1991-05-17 | 1999-12-23 | Asahi Glass Co Ltd | Oberflächenbehandeltes Substrat |
US5206983A (en) | 1991-06-24 | 1993-05-04 | Wisconsin Alumni Research Foundation | Method of manufacturing micromechanical devices |
US5421981A (en) | 1991-06-26 | 1995-06-06 | Ppg Industries, Inc. | Electrochemical sensor storage device |
EP0524759A1 (en) | 1991-07-23 | 1993-01-27 | AT&T Corp. | Device fabrication process |
US5242711A (en) | 1991-08-16 | 1993-09-07 | Rockwell International Corp. | Nucleation control of diamond films by microlithographic patterning |
JPH0553289A (ja) | 1991-08-22 | 1993-03-05 | Nec Corp | 位相シフトレチクルの製造方法 |
JPH0555654A (ja) | 1991-08-26 | 1993-03-05 | Nec Corp | 圧電素子変位拡大機構 |
US5317386A (en) * | 1991-09-06 | 1994-05-31 | Eastman Kodak Company | Optical monitor for measuring a gap between two rollers |
DE4228853C2 (de) | 1991-09-18 | 1993-10-21 | Schott Glaswerke | Optischer Wellenleiter mit einem planaren oder nur geringfügig gewölbten Substrat und Verfahren zu dessen Herstellung sowie Verwendung eines solchen |
JPH0580530A (ja) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
US5277749A (en) * | 1991-10-17 | 1994-01-11 | International Business Machines Corporation | Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps |
US5331020A (en) | 1991-11-14 | 1994-07-19 | Dow Corning Limited | Organosilicon compounds and compositions containing them |
US5263073A (en) | 1991-12-20 | 1993-11-16 | Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College | Scanning systems for high resolution E-beam and X-ray lithography |
US5204467A (en) * | 1991-12-20 | 1993-04-20 | E. I. Du Pont De Nemours And Company | Visible photosensitizers for photopolymerizable compositions |
US5204739A (en) * | 1992-02-07 | 1993-04-20 | Karl Suss America, Inc. | Proximity mask alignment using a stored video image |
US5244818A (en) | 1992-04-08 | 1993-09-14 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits |
US5545367A (en) | 1992-04-15 | 1996-08-13 | Soane Technologies, Inc. | Rapid prototype three dimensional stereolithography |
EP0568478A1 (en) | 1992-04-29 | 1993-11-03 | International Business Machines Corporation | Darkfield alignment system using a confocal spatial filter |
US5376810A (en) | 1992-06-26 | 1994-12-27 | California Institute Of Technology | Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response |
JPH06180505A (ja) * | 1992-07-02 | 1994-06-28 | Hitachi Ltd | 配線構造体及びその製造方法 |
US5298556A (en) * | 1992-07-21 | 1994-03-29 | Tse Industries, Inc. | Mold release composition and method coating a mold core |
US5601641A (en) * | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
US5431777A (en) | 1992-09-17 | 1995-07-11 | International Business Machines Corporation | Methods and compositions for the selective etching of silicon |
TW227628B (zh) | 1992-12-10 | 1994-08-01 | Samsung Electronics Co Ltd | |
DE69405451T2 (de) | 1993-03-16 | 1998-03-12 | Koninkl Philips Electronics Nv | Verfahren und Vorrichtung zur Herstellung eines strukturierten Reliefbildes aus vernetztem Photoresist auf einer flachen Substratoberfläche |
US5348616A (en) | 1993-05-03 | 1994-09-20 | Motorola, Inc. | Method for patterning a mold |
US5482768A (en) * | 1993-05-14 | 1996-01-09 | Asahi Glass Company Ltd. | Surface-treated substrate and process for its production |
US5861467A (en) * | 1993-05-18 | 1999-01-19 | Dow Corning Corporation | Radiation curable siloxane compositions containing vinyl ether functionality and methods for their preparation |
US5594042A (en) * | 1993-05-18 | 1997-01-14 | Dow Corning Corporation | Radiation curable compositions containing vinyl ether functional polyorganosiloxanes |
US5380474A (en) * | 1993-05-20 | 1995-01-10 | Sandia Corporation | Methods for patterned deposition on a substrate |
US5324683A (en) | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
JP2837063B2 (ja) * | 1993-06-04 | 1998-12-14 | シャープ株式会社 | レジストパターンの形成方法 |
US5414027A (en) * | 1993-07-15 | 1995-05-09 | Himont Incorporated | High melt strength, propylene polymer, process for making it, and use thereof |
US5389696A (en) | 1993-09-17 | 1995-02-14 | Miles Inc. | Process for the production of molded products using internal mold release agents |
US5900160A (en) | 1993-10-04 | 1999-05-04 | President And Fellows Of Harvard College | Methods of etching articles via microcontact printing |
US6180239B1 (en) * | 1993-10-04 | 2001-01-30 | President And Fellows Of Harvard College | Microcontact printing on surfaces and derivative articles |
US5776748A (en) | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
US6776094B1 (en) | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
US5512131A (en) * | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
NL9401260A (nl) | 1993-11-12 | 1995-06-01 | Cornelis Johannes Maria Van Ri | Membraan voor microfiltratie, ultrafiltratie, gasscheiding en katalyse, werkwijze ter vervaardiging van een dergelijk membraan, mal ter vervaardiging van een dergelijk membraan, alsmede diverse scheidingssystemen omvattende een dergelijk membraan. |
KR970009858B1 (ko) | 1994-01-12 | 1997-06-18 | 엘지반도체 주식회사 | 다층 레지스트 패턴 형성방법 |
US5534101A (en) * | 1994-03-02 | 1996-07-09 | Telecommunication Research Laboratories | Method and apparatus for making optical components by direct dispensing of curable liquid |
US5417802A (en) | 1994-03-18 | 1995-05-23 | At&T Corp. | Integrated circuit manufacturing |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5453157A (en) | 1994-05-16 | 1995-09-26 | Texas Instruments Incorporated | Low temperature anisotropic ashing of resist for semiconductor fabrication |
US5670415A (en) | 1994-05-24 | 1997-09-23 | Depositech, Inc. | Method and apparatus for vacuum deposition of highly ionized media in an electromagnetic controlled environment |
US5542978A (en) | 1994-06-10 | 1996-08-06 | Johnson & Johnson Vision Products, Inc. | Apparatus for applying a surfactant to mold surfaces |
US5837314A (en) | 1994-06-10 | 1998-11-17 | Johnson & Johnson Vision Products, Inc. | Method and apparatus for applying a surfactant to mold surfaces |
US5523878A (en) | 1994-06-30 | 1996-06-04 | Texas Instruments Incorporated | Self-assembled monolayer coating for micro-mechanical devices |
US5425964A (en) | 1994-07-22 | 1995-06-20 | Rockwell International Corporation | Deposition of multiple layer thin films using a broadband spectral monitor |
US5515167A (en) | 1994-09-13 | 1996-05-07 | Hughes Aircraft Company | Transparent optical chuck incorporating optical monitoring |
US5458520A (en) | 1994-12-13 | 1995-10-17 | International Business Machines Corporation | Method for producing planar field emission structure |
US5868966A (en) | 1995-03-30 | 1999-02-09 | Drexel University | Electroactive inorganic organic hybrid materials |
US5849209A (en) | 1995-03-31 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Mold material made with additives |
US5743998A (en) * | 1995-04-19 | 1998-04-28 | Park Scientific Instruments | Process for transferring microminiature patterns using spin-on glass resist media |
US5820769A (en) | 1995-05-24 | 1998-10-13 | Regents Of The University Of Minnesota | Method for making magnetic storage having discrete elements with quantized magnetic moments |
US5948570A (en) | 1995-05-26 | 1999-09-07 | Lucent Technologies Inc. | Process for dry lithographic etching |
JP3624476B2 (ja) * | 1995-07-17 | 2005-03-02 | セイコーエプソン株式会社 | 半導体レーザ装置の製造方法 |
EP0839341B1 (de) * | 1995-07-19 | 2002-09-25 | Ciba SC Holding AG | Heterogene photoinitiatoren, photopolymerisierbare zusammensetzungen und deren verwendung |
US5654238A (en) | 1995-08-03 | 1997-08-05 | International Business Machines Corporation | Method for etching vertical contact holes without substrate damage caused by directional etching |
US6518168B1 (en) * | 1995-08-18 | 2003-02-11 | President And Fellows Of Harvard College | Self-assembled monolayer directed patterning of surfaces |
US5566584A (en) | 1995-08-31 | 1996-10-22 | Beta Squared, Inc. | Flexure support for a fixture positioning device |
US5545570A (en) | 1995-09-29 | 1996-08-13 | Taiwan Semiconductor Manufacturing Company | Method of inspecting first layer overlay shift in global alignment process |
US5849222A (en) | 1995-09-29 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Method for reducing lens hole defects in production of contact lens blanks |
US6468642B1 (en) | 1995-10-03 | 2002-10-22 | N.V. Bekaert S.A. | Fluorine-doped diamond-like coatings |
SE508373C2 (sv) | 1995-10-30 | 1998-09-28 | Obducat Ab | Kruptosystem för optiskt lagringsmedia |
US7758794B2 (en) | 2001-10-29 | 2010-07-20 | Princeton University | Method of making an article comprising nanoscale patterns with reduced edge roughness |
US6482742B1 (en) | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US6518189B1 (en) * | 1995-11-15 | 2003-02-11 | Regents Of The University Of Minnesota | Method and apparatus for high density nanostructures |
US5772905A (en) | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US20040036201A1 (en) * | 2000-07-18 | 2004-02-26 | Princeton University | Methods and apparatus of field-induced pressure imprint lithography |
US6309580B1 (en) | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US20040137734A1 (en) | 1995-11-15 | 2004-07-15 | Princeton University | Compositions and processes for nanoimprinting |
US20030080471A1 (en) | 2001-10-29 | 2003-05-01 | Chou Stephen Y. | Lithographic method for molding pattern with nanoscale features |
US5747102A (en) | 1995-11-16 | 1998-05-05 | Nordson Corporation | Method and apparatus for dispensing small amounts of liquid material |
US5684066A (en) | 1995-12-04 | 1997-11-04 | H.B. Fuller Licensing & Financing, Inc. | Protective coatings having enhanced properties |
JP2842362B2 (ja) | 1996-02-29 | 1999-01-06 | 日本電気株式会社 | 重ね合わせ測定方法 |
US5725788A (en) * | 1996-03-04 | 1998-03-10 | Motorola | Apparatus and method for patterning a surface |
US5669303A (en) | 1996-03-04 | 1997-09-23 | Motorola | Apparatus and method for stamping a surface |
US6355198B1 (en) * | 1996-03-15 | 2002-03-12 | President And Fellows Of Harvard College | Method of forming articles including waveguides via capillary micromolding and microtransfer molding |
DE69729376T2 (de) * | 1996-03-27 | 2005-06-02 | Novartis Ag | Verfahren zur herstellung von porösen polymeren unter anwendung eines porenbildendes agens |
ES2201280T3 (es) * | 1996-03-27 | 2004-03-16 | Novartis Ag | Procedimiento para la fabricacion de un polimero poroso a partir de una mezcla. |
DE69726268T2 (de) * | 1996-03-27 | 2004-09-16 | Novartis Ag | Poröses polymer mit hohem wassergehalt |
JP3832891B2 (ja) | 1996-03-28 | 2006-10-11 | 日本トムソン株式会社 | リニア電磁アクチュエータを用いたxyテーブル |
US5942443A (en) * | 1996-06-28 | 1999-08-24 | Caliper Technologies Corporation | High throughput screening assay systems in microscale fluidic devices |
US5802914A (en) | 1996-05-30 | 1998-09-08 | Eastman Kodak Company | Alignment mechanism using flexures |
US5888650A (en) * | 1996-06-03 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Temperature-responsive adhesive article |
US5779799A (en) | 1996-06-21 | 1998-07-14 | Micron Technology, Inc. | Substrate coating apparatus |
JPH1039501A (ja) * | 1996-07-19 | 1998-02-13 | Sekisui Finechem Co Ltd | 着色感光性樹脂組成物及びカラーフィルタ |
US6074827A (en) | 1996-07-30 | 2000-06-13 | Aclara Biosciences, Inc. | Microfluidic method for nucleic acid purification and processing |
SG53043A1 (en) * | 1996-08-28 | 1998-09-28 | Ciba Geigy Ag | Molecular complex compounds as photoinitiators |
US6039897A (en) * | 1996-08-28 | 2000-03-21 | University Of Washington | Multiple patterned structures on a single substrate fabricated by elastomeric micro-molding techniques |
DE19648844C1 (de) | 1996-11-26 | 1997-09-18 | Jenoptik Jena Gmbh | Einrichtung und Verfahren zur Abformung mikrosystemtechnischer Strukturen |
US6204343B1 (en) | 1996-12-11 | 2001-03-20 | 3M Innovative Properties Company | Room temperature curable resin |
US5895263A (en) * | 1996-12-19 | 1999-04-20 | International Business Machines Corporation | Process for manufacture of integrated circuit device |
US5792821A (en) | 1997-01-06 | 1998-08-11 | American Dental Association Health Foundation | Polymerizable cyclodextrin derivatives |
US6495624B1 (en) | 1997-02-03 | 2002-12-17 | Cytonix Corporation | Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same |
US6156389A (en) | 1997-02-03 | 2000-12-05 | Cytonix Corporation | Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same |
US6143412A (en) | 1997-02-10 | 2000-11-07 | President And Fellows Of Harvard College | Fabrication of carbon microstructures |
DE19710420C2 (de) * | 1997-03-13 | 2001-07-12 | Helmut Fischer Gmbh & Co | Verfahren und Vorrichtung zum Messen der Dicken dünner Schichten mittels Röntgenfluoreszenz |
US6335149B1 (en) * | 1997-04-08 | 2002-01-01 | Corning Incorporated | High performance acrylate materials for optical interconnects |
US5948470A (en) | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US5948219A (en) | 1997-05-07 | 1999-09-07 | Advanced Micro Devices, Inc. | Apparatus for selectively exposing a semiconductor topography to an electric field |
US6174932B1 (en) * | 1998-05-20 | 2001-01-16 | Denovus Llc | Curable sealant composition |
JPH10319597A (ja) * | 1997-05-23 | 1998-12-04 | Mitsubishi Electric Corp | 感光性シリコーンラダー系樹脂組成物、この樹脂組成物にパターンを転写するパターン転写方法および上記樹脂組成物を用いた半導体装置 |
US5926690A (en) | 1997-05-28 | 1999-07-20 | Advanced Micro Devices, Inc. | Run-to-run control process for controlling critical dimensions |
JPH1143521A (ja) * | 1997-05-30 | 1999-02-16 | Matsushita Electric Ind Co Ltd | モールド組成物、モールド部品およびモールド部品の製造方法 |
US6033977A (en) * | 1997-06-30 | 2000-03-07 | Siemens Aktiengesellschaft | Dual damascene structure |
US5912049A (en) | 1997-08-12 | 1999-06-15 | Micron Technology, Inc. | Process liquid dispense method and apparatus |
US6132632A (en) | 1997-09-11 | 2000-10-17 | International Business Machines Corporation | Method and apparatus for achieving etch rate uniformity in a reactive ion etcher |
US6475704B1 (en) | 1997-09-12 | 2002-11-05 | Canon Kabushiki Kaisha | Method for forming fine structure |
JPH11133201A (ja) * | 1997-10-29 | 1999-05-21 | Menicon Co Ltd | 光学材料 |
US5877861A (en) * | 1997-11-14 | 1999-03-02 | International Business Machines Corporation | Method for overlay control system |
US5937758A (en) | 1997-11-26 | 1999-08-17 | Motorola, Inc. | Micro-contact printing stamp |
US5991022A (en) | 1997-12-09 | 1999-11-23 | N&K Technology, Inc. | Reflectance spectrophotometric apparatus with toroidal mirrors |
US6117708A (en) | 1998-02-05 | 2000-09-12 | Micron Technology, Inc. | Use of residual organic compounds to facilitate gate break on a carrier substrate for a semiconductor device |
US6150680A (en) | 1998-03-05 | 2000-11-21 | Welch Allyn, Inc. | Field effect semiconductor device having dipole barrier |
US6114404A (en) | 1998-03-23 | 2000-09-05 | Corning Incorporated | Radiation curable ink compositions and flat panel color filters made using same |
TW352421B (en) * | 1998-04-27 | 1999-02-11 | United Microelectronics Corp | Method and process of phase shifting mask |
JP3780700B2 (ja) | 1998-05-26 | 2006-05-31 | セイコーエプソン株式会社 | パターン形成方法、パターン形成装置、パターン形成用版、パターン形成用版の製造方法、カラーフィルタの製造方法、導電膜の製造方法及び液晶パネルの製造方法 |
US6150231A (en) | 1998-06-15 | 2000-11-21 | Siemens Aktiengesellschaft | Overlay measurement technique using moire patterns |
DE19828969A1 (de) | 1998-06-29 | 1999-12-30 | Siemens Ag | Verfahren zur Herstellung von Halbleiterbauelementen |
KR100273172B1 (ko) * | 1998-08-01 | 2001-03-02 | 윤덕용 | 아크릴 측쇄에 디옥사스피로환기 유도체를 갖는 화합물을 이용한 포토레지스트 |
US5907782A (en) | 1998-08-15 | 1999-05-25 | Acer Semiconductor Manufacturing Inc. | Method of forming a multiple fin-pillar capacitor for a high density dram cell |
US6096655A (en) | 1998-09-02 | 2000-08-01 | International Business Machines, Corporation | Method for forming vias and trenches in an insulation layer for a dual-damascene multilevel interconnection structure |
TWI230712B (en) * | 1998-09-15 | 2005-04-11 | Novartis Ag | Polymers |
US6713238B1 (en) * | 1998-10-09 | 2004-03-30 | Stephen Y. Chou | Microscale patterning and articles formed thereby |
US6218316B1 (en) * | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6204922B1 (en) * | 1998-12-11 | 2001-03-20 | Filmetrics, Inc. | Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample |
US6168845B1 (en) * | 1999-01-19 | 2001-01-02 | International Business Machines Corporation | Patterned magnetic media and method of making the same using selective oxidation |
US6274294B1 (en) | 1999-02-03 | 2001-08-14 | Electroformed Stents, Inc. | Cylindrical photolithography exposure process and apparatus |
US6245421B1 (en) | 1999-02-04 | 2001-06-12 | Kodak Polychrome Graphics Llc | Printable media for lithographic printing having a porous, hydrophilic layer and a method for the production thereof |
US6565928B2 (en) | 1999-03-08 | 2003-05-20 | Tokyo Electron Limited | Film forming method and film forming apparatus |
US6334960B1 (en) * | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
JP4286374B2 (ja) | 1999-03-30 | 2009-06-24 | 新日鐵化学株式会社 | シリコーン樹脂及びこれを含有する感光性樹脂組成物 |
US6342097B1 (en) * | 1999-04-23 | 2002-01-29 | Sdc Coatings, Inc. | Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability |
US6387783B1 (en) | 1999-04-26 | 2002-05-14 | International Business Machines Corporation | Methods of T-gate fabrication using a hybrid resist |
JP3939048B2 (ja) | 1999-05-17 | 2007-06-27 | セイコーインスツル株式会社 | 圧電アクチュエータ |
CN1355739A (zh) | 1999-06-11 | 2002-06-26 | 博士伦公司 | 用于生产接触镜片和其它眼科产品的带有保护涂层的镜片模具 |
US6188150B1 (en) * | 1999-06-16 | 2001-02-13 | Euv, Llc | Light weight high-stiffness stage platen |
US6255022B1 (en) * | 1999-06-17 | 2001-07-03 | Taiwan Semiconductor Manufacturing Company | Dry development process for a bi-layer resist system utilized to reduce microloading |
US6467761B1 (en) | 1999-06-21 | 2002-10-22 | The United States Of America As Represented By The Secretary Of Commerce | Positioning stage |
JP2001143982A (ja) | 1999-06-29 | 2001-05-25 | Applied Materials Inc | 半導体デバイス製造のための統合臨界寸法制御 |
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
US6190929B1 (en) * | 1999-07-23 | 2001-02-20 | Micron Technology, Inc. | Methods of forming semiconductor devices and methods of forming field emission displays |
US6383928B1 (en) | 1999-09-02 | 2002-05-07 | Texas Instruments Incorporated | Post copper CMP clean |
WO2001018305A1 (en) | 1999-09-10 | 2001-03-15 | Nano-Tex, Llc | Water-repellent and soil-resistant finish for textiles |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6329256B1 (en) | 1999-09-24 | 2001-12-11 | Advanced Micro Devices, Inc. | Self-aligned damascene gate formation with low gate resistance |
US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
DE19958966A1 (de) * | 1999-12-07 | 2001-06-13 | Infineon Technologies Ag | Erzeugung von Resiststrukturen |
US6091485A (en) | 1999-12-15 | 2000-07-18 | N & K Technology, Inc. | Method and apparatus for optically determining physical parameters of underlayers |
ATE294648T1 (de) | 1999-12-23 | 2005-05-15 | Univ Massachusetts | Verfahren zur herstellung von submikron mustern auf filmen |
US6696157B1 (en) * | 2000-03-05 | 2004-02-24 | 3M Innovative Properties Company | Diamond-like glass thin films |
US6245581B1 (en) | 2000-04-19 | 2001-06-12 | Advanced Micro Devices, Inc. | Method and apparatus for control of critical dimension using feedback etch control |
US6756165B2 (en) | 2000-04-25 | 2004-06-29 | Jsr Corporation | Radiation sensitive resin composition for forming barrier ribs for an EL display element, barrier rib and EL display element |
US6774183B1 (en) | 2000-04-27 | 2004-08-10 | Bostik, Inc. | Copolyesters having improved retained adhesion |
JP2002023349A (ja) * | 2000-07-11 | 2002-01-23 | Toray Ind Inc | 感光性樹脂凸版材 |
EP2264522A3 (en) | 2000-07-16 | 2011-12-14 | The Board of Regents of The University of Texas System | Method of forming a pattern on a substrate |
WO2002006902A2 (en) | 2000-07-17 | 2002-01-24 | Board Of Regents, The University Of Texas System | Method and system of automatic fluid dispensing for imprint lithography processes |
US20050037143A1 (en) * | 2000-07-18 | 2005-02-17 | Chou Stephen Y. | Imprint lithography with improved monitoring and control and apparatus therefor |
US7211214B2 (en) * | 2000-07-18 | 2007-05-01 | Princeton University | Laser assisted direct imprint lithography |
US7635262B2 (en) | 2000-07-18 | 2009-12-22 | Princeton University | Lithographic apparatus for fluid pressure imprint lithography |
WO2002010721A2 (en) | 2000-08-01 | 2002-02-07 | Board Of Regents, The University Of Texas System | Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography |
US6326627B1 (en) | 2000-08-02 | 2001-12-04 | Archimedes Technology Group, Inc. | Mass filtering sputtered ion source |
US6777170B1 (en) | 2000-08-04 | 2004-08-17 | Massachusetts Institute Of Technology | Stereolithographic patterning by variable dose light delivery |
US6730256B1 (en) | 2000-08-04 | 2004-05-04 | Massachusetts Institute Of Technology | Stereolithographic patterning with interlayer surface modifications |
ES2284515T3 (es) * | 2000-08-11 | 2007-11-16 | Tokuyama Corporation | Procedimiento paa producir un producto curado fotocromico. |
WO2002017383A2 (en) | 2000-08-21 | 2002-02-28 | Board Of Regents, The University Of Texas System | Flexure based translation stage |
US6531407B1 (en) | 2000-08-31 | 2003-03-11 | Micron Technology, Inc. | Method, structure and process flow to reduce line-line capacitance with low-K material |
US6448301B1 (en) | 2000-09-08 | 2002-09-10 | 3M Innovative Properties Company | Crosslinkable polymeric compositions and use thereof |
US6455411B1 (en) | 2000-09-11 | 2002-09-24 | Texas Instruments Incorporated | Defect and etch rate control in trench etch for dual damascene patterning of low-k dielectrics |
JP2002097233A (ja) * | 2000-09-21 | 2002-04-02 | Nippon Shokubai Co Ltd | ラジカル重合性樹脂乾燥性付与剤、ラジカル重合性樹脂組成物及びラジカル重合性樹脂組成物硬化物 |
CN100365507C (zh) | 2000-10-12 | 2008-01-30 | 德克萨斯州大学系统董事会 | 用于室温下低压微刻痕和毫微刻痕光刻的模板 |
US6503914B1 (en) | 2000-10-23 | 2003-01-07 | Board Of Regents, The University Of Texas System | Thienopyrimidine-based inhibitors of the Src family |
AU2002223792A1 (en) * | 2000-11-10 | 2002-05-21 | Durand Technology Limited | Optical recording materials |
KR20020047490A (ko) | 2000-12-13 | 2002-06-22 | 윤종용 | 실리콘을 함유하는 감광성 폴리머 및 이를 포함하는레지스트 조성물 |
US6632742B2 (en) | 2001-04-18 | 2003-10-14 | Promos Technologies Inc. | Method for avoiding defects produced in the CMP process |
US6783719B2 (en) | 2001-01-19 | 2004-08-31 | Korry Electronics, Co. | Mold with metal oxide surface compatible with ionic release agents |
US6489068B1 (en) | 2001-02-21 | 2002-12-03 | Advanced Micro Devices, Inc. | Process for observing overlay errors on lithographic masks |
WO2002069040A1 (en) * | 2001-02-27 | 2002-09-06 | Shipley Company, Llc | Novel polymers, processes for polymer synthesis and photoresist compositions |
US6387787B1 (en) | 2001-03-02 | 2002-05-14 | Motorola, Inc. | Lithographic template and method of formation and use |
KR100442859B1 (ko) | 2001-04-04 | 2004-08-02 | 삼성전자주식회사 | 실리콘을 함유하는 알킬 비닐 에테르의 중합체로이루어지는 감광성 폴리머 및 이를 포함하는 레지스트조성물 |
US6534418B1 (en) * | 2001-04-30 | 2003-03-18 | Advanced Micro Devices, Inc. | Use of silicon containing imaging layer to define sub-resolution gate structures |
US6541360B1 (en) * | 2001-04-30 | 2003-04-01 | Advanced Micro Devices, Inc. | Bi-layer trim etch process to form integrated circuit gate structures |
US6964793B2 (en) | 2002-05-16 | 2005-11-15 | Board Of Regents, The University Of Texas System | Method for fabricating nanoscale patterns in light curable compositions using an electric field |
US6541356B2 (en) * | 2001-05-21 | 2003-04-01 | International Business Machines Corporation | Ultimate SIMOX |
US6737489B2 (en) | 2001-05-21 | 2004-05-18 | 3M Innovative Properties Company | Polymers containing perfluorovinyl ethers and applications for such polymers |
US6736857B2 (en) | 2001-05-25 | 2004-05-18 | 3M Innovative Properties Company | Method for imparting soil and stain resistance to carpet |
US6847433B2 (en) | 2001-06-01 | 2005-01-25 | Agere Systems, Inc. | Holder, system, and process for improving overlay in lithography |
TW488080B (en) | 2001-06-08 | 2002-05-21 | Au Optronics Corp | Method for producing thin film transistor |
US6561706B2 (en) | 2001-06-28 | 2003-05-13 | Advanced Micro Devices, Inc. | Critical dimension monitoring from latent image |
CA2454570C (en) | 2001-07-25 | 2016-12-20 | The Trustees Of Princeton University | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
JP2003057818A (ja) * | 2001-08-20 | 2003-02-28 | Asahi Kasei Corp | 厚膜導体回路用液状感光性樹脂組成物 |
US6721529B2 (en) | 2001-09-21 | 2004-04-13 | Nexpress Solutions Llc | Release agent donor member having fluorocarbon thermoplastic random copolymer overcoat |
CN100347608C (zh) * | 2001-09-25 | 2007-11-07 | 米卢塔技术株式会社 | 利用毛细作用力在基体上形成微型图案的方法 |
US6790905B2 (en) | 2001-10-09 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Highly repellent carpet protectants |
JP2003118008A (ja) * | 2001-10-17 | 2003-04-23 | Mitsui Chemicals Inc | 樹脂成型体の製造方法 |
US6716767B2 (en) * | 2001-10-31 | 2004-04-06 | Brewer Science, Inc. | Contact planarization materials that generate no volatile byproducts or residue during curing |
JP2005516406A (ja) | 2001-11-07 | 2005-06-02 | ダウ グローバル テクノロジーズ インコーポレイティド | 平坦化マイクロエレクトロニクス基板 |
US6649272B2 (en) | 2001-11-08 | 2003-11-18 | 3M Innovative Properties Company | Coating composition comprising fluorochemical polyether silane polycondensate and use thereof |
US6890688B2 (en) | 2001-12-18 | 2005-05-10 | Freescale Semiconductor, Inc. | Lithographic template and method of formation and use |
EP1484645A4 (en) | 2002-02-19 | 2008-12-17 | Nissan Chemical Ind Ltd | COMPOSITION FOR FORMING ANTIREFLECTION COATING |
US6737202B2 (en) | 2002-02-22 | 2004-05-18 | Motorola, Inc. | Method of fabricating a tiered structure using a multi-layered resist stack and use |
US7455955B2 (en) * | 2002-02-27 | 2008-11-25 | Brewer Science Inc. | Planarization method for multi-layer lithography processing |
US7060774B2 (en) | 2002-02-28 | 2006-06-13 | Merck Patent Gesellschaft | Prepolymer material, polymer material, imprinting process and their use |
EP1342736B1 (en) | 2002-02-28 | 2013-05-08 | Merck Patent GmbH | Prepolymer material, polymer material, imprinting process and their Use |
US7037639B2 (en) | 2002-05-01 | 2006-05-02 | Molecular Imprints, Inc. | Methods of manufacturing a lithography template |
US6743713B2 (en) | 2002-05-15 | 2004-06-01 | Institute Of Microelectronics | Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC) |
US6849558B2 (en) * | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US20030235787A1 (en) | 2002-06-24 | 2003-12-25 | Watts Michael P.C. | Low viscosity high resolution patterning material |
US7179079B2 (en) * | 2002-07-08 | 2007-02-20 | Molecular Imprints, Inc. | Conforming template for patterning liquids disposed on substrates |
US6926929B2 (en) * | 2002-07-09 | 2005-08-09 | Molecular Imprints, Inc. | System and method for dispensing liquids |
US6900881B2 (en) * | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US7019819B2 (en) | 2002-11-13 | 2006-03-28 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
US6932934B2 (en) * | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6908861B2 (en) * | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
JP2006502837A (ja) | 2002-07-23 | 2006-01-26 | シエル・インターナシヨネイル・リサーチ・マーチヤツピイ・ベー・ウイ | 疎水性表面処理組成物、並びにその製造法及び使用法 |
US6916584B2 (en) * | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US7027156B2 (en) * | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US7070405B2 (en) * | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
US6936194B2 (en) | 2002-09-05 | 2005-08-30 | Molecular Imprints, Inc. | Functional patterning material for imprint lithography processes |
US20040065252A1 (en) * | 2002-10-04 | 2004-04-08 | Sreenivasan Sidlgata V. | Method of forming a layer on a substrate to facilitate fabrication of metrology standards |
US6980282B2 (en) | 2002-12-11 | 2005-12-27 | Molecular Imprints, Inc. | Method for modulating shapes of substrates |
US6929762B2 (en) | 2002-11-13 | 2005-08-16 | Molecular Imprints, Inc. | Method of reducing pattern distortions during imprint lithography processes |
US7750059B2 (en) | 2002-12-04 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US7365103B2 (en) | 2002-12-12 | 2008-04-29 | Board Of Regents, The University Of Texas System | Compositions for dark-field polymerization and method of using the same for imprint lithography processes |
US20040112862A1 (en) | 2002-12-12 | 2004-06-17 | Molecular Imprints, Inc. | Planarization composition and method of patterning a substrate using the same |
JP4210858B2 (ja) | 2002-12-26 | 2009-01-21 | 日産化学工業株式会社 | アルカリ溶解型リソグラフィー用ギャップフィル材形成組成物 |
US20040168613A1 (en) | 2003-02-27 | 2004-09-02 | Molecular Imprints, Inc. | Composition and method to form a release layer |
US6770852B1 (en) | 2003-02-27 | 2004-08-03 | Lam Research Corporation | Critical dimension variation compensation across a wafer by means of local wafer temperature control |
US7452574B2 (en) | 2003-02-27 | 2008-11-18 | Molecular Imprints, Inc. | Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer |
US6830819B2 (en) | 2003-03-18 | 2004-12-14 | Xerox Corporation | Fluorosilicone release agent for fluoroelastomer fuser members |
US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
US6943117B2 (en) | 2003-03-27 | 2005-09-13 | Korea Institute Of Machinery & Materials | UV nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization |
US20040202865A1 (en) | 2003-04-08 | 2004-10-14 | Andrew Homola | Release coating for stamper |
TWI228638B (en) | 2003-06-10 | 2005-03-01 | Ind Tech Res Inst | Method for and apparatus for bonding patterned imprint to a substrate by adhering means |
US20050160934A1 (en) | 2004-01-23 | 2005-07-28 | Molecular Imprints, Inc. | Materials and methods for imprint lithography |
US7307118B2 (en) | 2004-11-24 | 2007-12-11 | Molecular Imprints, Inc. | Composition to reduce adhesion between a conformable region and a mold |
JP2005014348A (ja) | 2003-06-25 | 2005-01-20 | Fuji Photo Film Co Ltd | 平版印刷版原版及び平版印刷方法 |
US20050084804A1 (en) | 2003-10-16 | 2005-04-21 | Molecular Imprints, Inc. | Low surface energy templates |
US7122482B2 (en) | 2003-10-27 | 2006-10-17 | Molecular Imprints, Inc. | Methods for fabricating patterned features utilizing imprint lithography |
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2004
- 2004-02-23 US US10/784,911 patent/US8076386B2/en active Active
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2005
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US8076386B2 (en) | 2011-12-13 |
JP2007523249A (ja) | 2007-08-16 |
EP1718697A1 (en) | 2006-11-08 |
EP2261280B1 (en) | 2014-10-08 |
EP2261280A1 (en) | 2010-12-15 |
JP2015130499A (ja) | 2015-07-16 |
JP5426814B2 (ja) | 2014-02-26 |
MY141006A (en) | 2010-02-12 |
WO2005082992A1 (en) | 2005-09-09 |
TW200602406A (en) | 2006-01-16 |
JP6326700B2 (ja) | 2018-05-23 |
US20050187339A1 (en) | 2005-08-25 |
JP2012195610A (ja) | 2012-10-11 |
JP5753132B2 (ja) | 2015-07-22 |
EP1718697A4 (en) | 2007-03-21 |
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