JP5084728B2 - 材料を相互に接着するための方法及び組成物 - Google Patents
材料を相互に接着するための方法及び組成物 Download PDFInfo
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- JP5084728B2 JP5084728B2 JP2008522785A JP2008522785A JP5084728B2 JP 5084728 B2 JP5084728 B2 JP 5084728B2 JP 2008522785 A JP2008522785 A JP 2008522785A JP 2008522785 A JP2008522785 A JP 2008522785A JP 5084728 B2 JP5084728 B2 JP 5084728B2
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- 239000000463 material Substances 0.000 title claims description 102
- 239000000203 mixture Substances 0.000 title claims description 92
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims description 59
- 150000001875 compounds Chemical class 0.000 claims description 20
- 238000001459 lithography Methods 0.000 claims description 18
- 230000003993 interaction Effects 0.000 claims description 11
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 10
- 238000006116 polymerization reaction Methods 0.000 claims description 9
- 238000004132 cross linking Methods 0.000 claims description 7
- 238000005411 Van der Waals force Methods 0.000 claims description 6
- 239000003431 cross linking reagent Substances 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 230000010062 adhesion mechanism Effects 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims 4
- 125000001931 aliphatic group Chemical group 0.000 claims 2
- 230000000379 polymerizing effect Effects 0.000 claims 2
- 229920001187 thermosetting polymer Polymers 0.000 claims 2
- 125000000524 functional group Chemical group 0.000 description 37
- 241000446313 Lamella Species 0.000 description 22
- 229920003270 Cymel® Polymers 0.000 description 15
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 15
- 230000001070 adhesive effect Effects 0.000 description 14
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- 239000000126 substance Substances 0.000 description 11
- 239000004094 surface-active agent Substances 0.000 description 11
- 238000000926 separation method Methods 0.000 description 10
- 239000004971 Cross linker Substances 0.000 description 8
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
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- 239000002904 solvent Substances 0.000 description 6
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- ZAXXZBQODQDCOW-UHFFFAOYSA-N 1-methoxypropyl acetate Chemical compound CCC(OC)OC(C)=O ZAXXZBQODQDCOW-UHFFFAOYSA-N 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 5
- 230000037029 cross reaction Effects 0.000 description 5
- 230000032798 delamination Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000007791 liquid phase Substances 0.000 description 5
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000002861 polymer material Substances 0.000 description 4
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 3
- BNCADMBVWNPPIZ-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCN(COC)C1=NC(N(COC)COC)=NC(N(COC)COC)=N1 BNCADMBVWNPPIZ-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 108091092920 SmY RNA Proteins 0.000 description 2
- 241001237710 Smyrna Species 0.000 description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000001127 nanoimprint lithography Methods 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000005501 phase interface Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- GJKGAPPUXSSCFI-UHFFFAOYSA-N 2-Hydroxy-4'-(2-hydroxyethoxy)-2-methylpropiophenone Chemical compound CC(C)(O)C(=O)C1=CC=C(OCCO)C=C1 GJKGAPPUXSSCFI-UHFFFAOYSA-N 0.000 description 1
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 1
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- PKFOWTHVQGBTEM-UHFFFAOYSA-N CC(C)(c(cc1)ccc1OCC1OC1)c(cc1)ccc1OC(C=C)=O Chemical compound CC(C)(c(cc1)ccc1OCC1OC1)c(cc1)ccc1OC(C=C)=O PKFOWTHVQGBTEM-UHFFFAOYSA-N 0.000 description 1
- RZEZXTMPKZZSME-UHFFFAOYSA-N CC(CC1)CC1C1CCCC1 Chemical compound CC(CC1)CC1C1CCCC1 RZEZXTMPKZZSME-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000252506 Characiformes Species 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000007824 aliphatic compounds Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 125000003236 benzoyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C(*)=O 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KWLSQQRRSAWBOQ-UHFFFAOYSA-N dipotassioarsanylpotassium Chemical compound [K][As]([K])[K] KWLSQQRRSAWBOQ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000203 droplet dispensing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- 239000011346 highly viscous material Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29B—PREPARATION OR PRETREATMENT OF THE MATERIAL TO BE SHAPED; MAKING GRANULES OR PREFORMS; RECOVERY OF PLASTICS OR OTHER CONSTITUENTS OF WASTE MATERIAL CONTAINING PLASTICS
- B29B9/00—Making granules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/06—Embossing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L59/00—Compositions of polyacetals; Compositions of derivatives of polyacetals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0147—Film patterning
- B81C2201/015—Imprinting
- B81C2201/0153—Imprinting techniques not provided for in B81C2201/0152
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2451/00—Presence of graft polymer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Metallurgy (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Macromonomer-Based Addition Polymer (AREA)
- Laminated Bodies (AREA)
Description
バルクインプリント材料
アクリル酸イソボルニル、
アクリル酸n−ヘキシル、
ジアクリル酸エチレングリコール、
2−ヒドロキシ−2−メチル−1−フェニル−プロパン−1−オン。
組成物1
β−CEA
DUV30J−16
ここで、DUV30J−16は、組成物1の約100グラムを占め、β−CEAは、約0.219グラムを占める。DUV30J−16は、Rolla、MO所在のBrewer Scienceから入手可能なボトム反射防止コーティング、BARCであり、溶媒93%と非溶媒反応性成分7%を含む。DUV30J−16は、フェノール樹脂を含み、その架橋剤は、カルボキシル官能基と反応する。DUV30J−16は、構造部50と共有結合を形成しないと考えられる。他の組成物では、β−CEAを、架橋剤、触媒、IsoRad501に代えた。架橋剤と触媒はいずれも、West Patterson、New Jersey所在のCytec Industries,Inc.により販売されている。架橋剤は、製品名Cymel303ULFで販売されている。Cymel303ULFの主な成分の一種は、ヘキサメトキシメチル−メラミン(HMMM)である。HMMMのメトキシ官能基は、多くの縮合反応に関与する。触媒は、製品名Cycat4040で販売されており、次の組成物を提供する:
組成物2
DUV30J−16
Isorad 501
Cymel 303ULF
Cycat 4040
組成物2の約100グラムをDUV30J−16は占め、組成物2の0.611グラムをIsorad501は占め、組成物2の0.175グラムをCymel303ULFは占め、組成物2の0.008グラムをCycat4040は占める。
組成物3
IsoRad501
Cymel 303ULF
Cycat
酢酸PM
組成物3は、Isorad501を約77グラム、Cymel303ULFを22グラム含み、Cycat4040を1グラム含む。Isorad501、Cymel303ULF、Cycatを混合する。次いでIsorad501、Cymel303ULF、Cycatの混合物を酢酸PM約1900グラムに導入する。酢酸PMは、Kingsport、Tennessee所在のEastman Chemical社により販売されている酢酸2−(1−メトキシ)プロピルからなる溶媒の製品名である。
Claims (10)
- インプリントリソグラフィの基板に層を接着する方法であって、
(i)架橋剤および多官能性反応性化合物を含んだ組成物を前記インプリントリソグラフィの基板に堆積するステップであって、前記多官能性反応性化合物は(a)有機主鎖基、および(b)前記有機主鎖基の対向する両端に結合されたカルボキシル基とアクリロイル基とを有する前記ステップと、
(ii)組成物を熱硬化させるステップであって、(a)前記カルボキシル基を介して前記インプリントリソグラフィの基板と前記多官能性反応性化合物間の相互作用を形成することと(b)前記架橋剤を介して前記インプリントリソグラフィの基板と前記多官能性反応性化合物のカルボキシル基間の相互作用を形成することを含み、前記(a)および(b)間の相互作用が共有結合、イオン結合、ファンデルワールス力からなる接着機構の群から選択される前記ステップと、
(iii)前記熱硬化された組成物上に重合可能な材料を堆積させて前記層を形成するステップと、
(iv)前記重合可能な材料を化学線エネルギーに曝露し、前記重合可能な材料を重合するステップと、
を含んでなり、
前記重合可能な材料を重合するステップは、前記アクリロイル基を介して前記熱硬化された組成物にある重合可能な材料と前記多官能性化合物との間に共有結合を形成することを特徴とする方法。 - 前記重合可能な材料を堆積させるステップは、前記熱硬化された組成物上に前記重合可能な材料の液滴を離散して堆積させることを特徴とする請求項1に記載の方法。
- 前記有機主鎖基は脂肪族および芳香族から構成される複数の群から選択されることを特徴とする請求項1または2に記載の方法。
- インプリントリソグラフィの基板に層を接着する方法であって、
(i)架橋剤および多官能性反応性化合物を含んだ組成物を前記インプリントリソグラフィの基板に堆積するステップであって、前記多官能性反応性化合物は(a)有機主鎖基、および(b)前記有機主鎖基の対向する両端に結合されたカルボキシル基とアクリロイル基とを有する前記ステップと、
(ii)前記組成物を凝固させて前記インプリントリソグラフィの基板に接着するステップであって、前記凝固は、(a)前記インプリントリソグラフィの基板と前記カルボキシル基間の相互作用を形成することと、(b)前記架橋剤を介して前記インプリントリソグラフィの基板と前記多官能性反応性化合物のカルボキシル基間の相互作用を形成することを含み、前記(a)および(b)間の相互作用が共有結合、イオン結合、ファンデルワールス力からなる接着機構の群から選択される前記ステップと、
(iii)前記凝固された組成物上に重合可能な材料の液滴を離散して堆積するステップと、
(iv)前記重合可能な材料をインプリントリソグラフィのモールドに接触させるステップと、
(v)前記重合可能な材料を重合するステップであって、前記重合可能な材料の重合の間に重合可能な材料と前記凝固された組成物中のアクリロイル基の間に共有結合が形成されることを含む前記ステップと、
(vi)前記インプリントリソグラフィのモールドを前記重合された材料から剥離するステップと、
を含んでなる前記方法。 - 前記組成物を凝固するステップは、前記組成物を熱硬化するステップと、化学線エネルギーに前記重合可能な材料を曝露するステップをさらに有する、請求項5に記載の方法。
- 前記組成物は架橋剤を有し、前記組成物を凝固するステップは、前記カルボキシル基が前記インプリントリソグラフィの基板と前記架橋と反応するステップをさらに有することを特徴とする請求項5または6に記載の方法。
- 前記有機主鎖基は、脂肪族および芳香族から構成される複数の群から選択されることを特徴とする請求項5〜7のいずれか1項に記載の方法。
- 前記基板がウェハである、請求項1〜9のいずれか1項に記載の方法。
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-
2005
- 2005-07-22 US US11/187,407 patent/US8557351B2/en active Active
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WO2007050133A2 (en) | 2007-05-03 |
EP1915888A4 (en) | 2013-05-22 |
US20140034229A1 (en) | 2014-02-06 |
KR20080038338A (ko) | 2008-05-06 |
US20070017631A1 (en) | 2007-01-25 |
KR101416112B1 (ko) | 2014-07-08 |
SG163605A1 (en) | 2010-08-30 |
JP2009503139A (ja) | 2009-01-29 |
WO2007050133A3 (en) | 2007-12-13 |
TW200710566A (en) | 2007-03-16 |
TWI329239B (en) | 2010-08-21 |
EP1915888B1 (en) | 2018-12-19 |
EP1915888A2 (en) | 2008-04-30 |
US8557351B2 (en) | 2013-10-15 |
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