JP4833512B2 - 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 - Google Patents
被処理体処理装置、被処理体処理方法及び被処理体搬送方法 Download PDFInfo
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- JP4833512B2 JP4833512B2 JP2003422821A JP2003422821A JP4833512B2 JP 4833512 B2 JP4833512 B2 JP 4833512B2 JP 2003422821 A JP2003422821 A JP 2003422821A JP 2003422821 A JP2003422821 A JP 2003422821A JP 4833512 B2 JP4833512 B2 JP 4833512B2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003422821A JP4833512B2 (ja) | 2003-06-24 | 2003-12-19 | 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 |
| DE102004010688A DE102004010688B4 (de) | 2003-06-24 | 2004-03-04 | Bearbeitungseinrichtung, Bearbeitungsverfahren, Drucksteuerverfahren, Transportverfahren, und Transporteinrichtung |
| US10/801,012 US20040262254A1 (en) | 2003-06-24 | 2004-03-16 | Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus |
| CNB2004100310536A CN100342518C (zh) | 2003-06-24 | 2004-04-12 | 处理设备、处理方法、压力控制方法、传送方法以及传送设备 |
| CNB2007101419116A CN100521083C (zh) | 2003-06-24 | 2004-04-12 | 处理方法、压力控制方法、传送方法及传送设备 |
| KR1020040032933A KR100736959B1 (ko) | 2003-06-24 | 2004-05-11 | 피처리체 처리 장치, 그의 피처리체 처리 방법, 압력 제어방법, 피처리체 반송 방법, 및 반송 장치 |
| TW093118155A TWI361723B (en) | 2003-06-24 | 2004-06-23 | Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus |
| KR1020060112076A KR100809126B1 (ko) | 2003-06-24 | 2006-11-14 | 피처리체 처리 장치 |
| US12/542,063 US8623765B2 (en) | 2003-06-24 | 2009-08-17 | Processed object processing apparatus, processed object processing method, pressure control method, processed object transfer method, and transfer apparatus |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003179435 | 2003-06-24 | ||
| JP2003179435 | 2003-06-24 | ||
| JP2003422821A JP4833512B2 (ja) | 2003-06-24 | 2003-12-19 | 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010048974A Division JP5001388B2 (ja) | 2003-06-24 | 2010-03-05 | 被処理体処理装置の圧力制御方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005039185A JP2005039185A (ja) | 2005-02-10 |
| JP2005039185A5 JP2005039185A5 (enExample) | 2007-02-01 |
| JP4833512B2 true JP4833512B2 (ja) | 2011-12-07 |
Family
ID=33543503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003422821A Expired - Fee Related JP4833512B2 (ja) | 2003-06-24 | 2003-12-19 | 被処理体処理装置、被処理体処理方法及び被処理体搬送方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20040262254A1 (enExample) |
| JP (1) | JP4833512B2 (enExample) |
| KR (2) | KR100736959B1 (enExample) |
| CN (2) | CN100521083C (enExample) |
| DE (1) | DE102004010688B4 (enExample) |
| TW (1) | TWI361723B (enExample) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6814844B2 (en) * | 2001-08-29 | 2004-11-09 | Roche Diagnostics Corporation | Biosensor with code pattern |
| US7877161B2 (en) | 2003-03-17 | 2011-01-25 | Tokyo Electron Limited | Method and system for performing a chemical oxide removal process |
| JP5001388B2 (ja) * | 2003-06-24 | 2012-08-15 | 東京エレクトロン株式会社 | 被処理体処理装置の圧力制御方法 |
| JP4860219B2 (ja) * | 2005-02-14 | 2012-01-25 | 東京エレクトロン株式会社 | 基板の処理方法、電子デバイスの製造方法及びプログラム |
| JP4843285B2 (ja) * | 2005-02-14 | 2011-12-21 | 東京エレクトロン株式会社 | 電子デバイスの製造方法及びプログラム |
| JP4475136B2 (ja) | 2005-02-18 | 2010-06-09 | 東京エレクトロン株式会社 | 処理システム、前処理装置及び記憶媒体 |
| JP2007088401A (ja) * | 2005-08-25 | 2007-04-05 | Tokyo Electron Ltd | 基板処理装置,基板処理方法,プログラム,プログラムを記録した記録媒体 |
| JP4791110B2 (ja) * | 2005-09-02 | 2011-10-12 | 東京エレクトロン株式会社 | 真空チャンバおよび真空処理装置 |
| JP5046506B2 (ja) * | 2005-10-19 | 2012-10-10 | 東京エレクトロン株式会社 | 基板処理装置,基板処理方法,プログラム,プログラムを記録した記録媒体 |
| JP4890025B2 (ja) * | 2005-12-28 | 2012-03-07 | 東京エレクトロン株式会社 | エッチング方法及び記録媒体 |
| JP4854317B2 (ja) | 2006-01-31 | 2012-01-18 | 東京エレクトロン株式会社 | 基板処理方法 |
| JP4933789B2 (ja) * | 2006-02-13 | 2012-05-16 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| US7660640B2 (en) * | 2006-03-07 | 2010-02-09 | Siemens Aktiengesellschaft | Apparatus and method for predictive control of a power generation system |
| JP4688764B2 (ja) * | 2006-09-19 | 2011-05-25 | 東京エレクトロン株式会社 | 基板処理装置の載置台除電方法 |
| JP5084250B2 (ja) * | 2006-12-26 | 2012-11-28 | 東京エレクトロン株式会社 | ガス処理装置およびガス処理方法ならびに記憶媒体 |
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| JP2008192643A (ja) * | 2007-01-31 | 2008-08-21 | Tokyo Electron Ltd | 基板処理装置 |
| US20080217293A1 (en) * | 2007-03-06 | 2008-09-11 | Tokyo Electron Limited | Processing system and method for performing high throughput non-plasma processing |
| KR100851237B1 (ko) * | 2007-03-15 | 2008-08-20 | 피에스케이 주식회사 | 기판 처리 방법 |
| KR101411421B1 (ko) * | 2007-09-21 | 2014-07-01 | 호재혁 | 반입/반출챔버, 이송챔버, 이를 포함하는 진공처리시스템 |
| JP5374039B2 (ja) | 2007-12-27 | 2013-12-25 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置及び記憶媒体 |
| US20120088370A1 (en) * | 2010-10-06 | 2012-04-12 | Lam Research Corporation | Substrate Processing System with Multiple Processing Devices Deployed in Shared Ambient Environment and Associated Methods |
| US9512520B2 (en) * | 2011-04-25 | 2016-12-06 | Applied Materials, Inc. | Semiconductor substrate processing system |
| CN102506712A (zh) * | 2011-11-04 | 2012-06-20 | 中国科学院微电子研究所 | 一种激光检测装置 |
| WO2013086432A2 (en) * | 2011-12-07 | 2013-06-13 | Intevac, Inc. | High throughput load lock for solar wafers |
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| US10964608B2 (en) * | 2018-03-20 | 2021-03-30 | Tokyo Electron Limited | Platform and method of operating for integrated end-to-end gate contact process |
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| US20040262254A1 (en) | 2004-12-30 |
| CN100521083C (zh) | 2009-07-29 |
| US8623765B2 (en) | 2014-01-07 |
| CN1574270A (zh) | 2005-02-02 |
| KR20050001299A (ko) | 2005-01-06 |
| CN100342518C (zh) | 2007-10-10 |
| US20090301525A1 (en) | 2009-12-10 |
| TWI361723B (en) | 2012-04-11 |
| TW200515952A (en) | 2005-05-16 |
| DE102004010688B4 (de) | 2010-07-22 |
| KR100809126B1 (ko) | 2008-03-03 |
| KR100736959B1 (ko) | 2007-07-09 |
| DE102004010688A1 (de) | 2005-02-17 |
| KR20060125661A (ko) | 2006-12-06 |
| JP2005039185A (ja) | 2005-02-10 |
| CN101101866A (zh) | 2008-01-09 |
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