JP4617337B2 - パターン形成方法 - Google Patents

パターン形成方法 Download PDF

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Publication number
JP4617337B2
JP4617337B2 JP2007155323A JP2007155323A JP4617337B2 JP 4617337 B2 JP4617337 B2 JP 4617337B2 JP 2007155323 A JP2007155323 A JP 2007155323A JP 2007155323 A JP2007155323 A JP 2007155323A JP 4617337 B2 JP4617337 B2 JP 4617337B2
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Japan
Prior art keywords
group
developer
resin
negative
acid
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JP2007155323A
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English (en)
Japanese (ja)
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JP2008309879A5 (US20080242721A1-20081002-C00053.png
JP2008309879A (ja
Inventor
英明 椿
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2007155323A priority Critical patent/JP4617337B2/ja
Priority to US12/137,371 priority patent/US8017298B2/en
Priority to EP08010596.8A priority patent/EP2003504B1/en
Priority to TW097121697A priority patent/TWI343513B/zh
Priority to TW099138811A priority patent/TWI438583B/zh
Priority to EP12197458.8A priority patent/EP2579098B1/en
Priority to KR1020080055449A priority patent/KR101028480B1/ko
Publication of JP2008309879A publication Critical patent/JP2008309879A/ja
Publication of JP2008309879A5 publication Critical patent/JP2008309879A5/ja
Priority to KR1020100112983A priority patent/KR101416132B1/ko
Priority to US12/959,147 priority patent/US8088557B2/en
Application granted granted Critical
Publication of JP4617337B2 publication Critical patent/JP4617337B2/ja
Priority to US13/306,174 priority patent/US8632942B2/en
Priority to US14/074,156 priority patent/US8852847B2/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007155323A 2007-06-12 2007-06-12 パターン形成方法 Active JP4617337B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2007155323A JP4617337B2 (ja) 2007-06-12 2007-06-12 パターン形成方法
EP08010596.8A EP2003504B1 (en) 2007-06-12 2008-06-11 Method of forming patterns
TW097121697A TWI343513B (en) 2007-06-12 2008-06-11 Method of forming patterns
TW099138811A TWI438583B (zh) 2007-06-12 2008-06-11 圖案形成方法
EP12197458.8A EP2579098B1 (en) 2007-06-12 2008-06-11 Method of forming patterns
US12/137,371 US8017298B2 (en) 2007-06-12 2008-06-11 Method of forming patterns
KR1020080055449A KR101028480B1 (ko) 2007-06-12 2008-06-12 패턴 형성 방법
KR1020100112983A KR101416132B1 (ko) 2007-06-12 2010-11-12 패턴 형성 방법
US12/959,147 US8088557B2 (en) 2007-06-12 2010-12-02 Method of forming patterns
US13/306,174 US8632942B2 (en) 2007-06-12 2011-11-29 Method of forming patterns
US14/074,156 US8852847B2 (en) 2007-06-12 2013-11-07 Method of forming patterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007155323A JP4617337B2 (ja) 2007-06-12 2007-06-12 パターン形成方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010197911A Division JP5050087B2 (ja) 2010-09-03 2010-09-03 パターン形成方法
JP2010197910A Division JP5050086B2 (ja) 2010-09-03 2010-09-03 パターン形成方法

Publications (3)

Publication Number Publication Date
JP2008309879A JP2008309879A (ja) 2008-12-25
JP2008309879A5 JP2008309879A5 (US20080242721A1-20081002-C00053.png) 2010-08-05
JP4617337B2 true JP4617337B2 (ja) 2011-01-26

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007155323A Active JP4617337B2 (ja) 2007-06-12 2007-06-12 パターン形成方法

Country Status (5)

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US (2) US8017298B2 (US20080242721A1-20081002-C00053.png)
EP (2) EP2579098B1 (US20080242721A1-20081002-C00053.png)
JP (1) JP4617337B2 (US20080242721A1-20081002-C00053.png)
KR (2) KR101028480B1 (US20080242721A1-20081002-C00053.png)
TW (2) TWI438583B (US20080242721A1-20081002-C00053.png)

Families Citing this family (109)

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EP2527919A1 (en) * 2010-09-10 2012-11-28 Rohm and Haas Electronic Materials LLC Photoresist compositions and methods of forming photolithographic patterns
JP5862894B2 (ja) * 2010-09-21 2016-02-16 日産化学工業株式会社 保護された脂肪族アルコールを含有する有機基を有するシリコン含有レジスト下層膜形成組成物
KR101393197B1 (ko) * 2010-10-19 2014-05-08 제이에스알 가부시끼가이샤 레지스트 패턴 형성 방법 및 감방사선성 수지 조성물
US20120122031A1 (en) * 2010-11-15 2012-05-17 International Business Machines Corporation Photoresist composition for negative development and pattern forming method using thereof
TWI506370B (zh) 2011-01-14 2015-11-01 Shinetsu Chemical Co 圖案形成方法及使用於該方法之光阻組成物
JP2012181523A (ja) * 2011-02-28 2012-09-20 Rohm & Haas Electronic Materials Llc 現像剤組成物、およびフォトリソグラフィパターンを形成する方法
JP5873250B2 (ja) 2011-04-27 2016-03-01 東京応化工業株式会社 レジストパターン形成方法
JP5772717B2 (ja) 2011-05-30 2015-09-02 信越化学工業株式会社 パターン形成方法
TWI450038B (zh) 2011-06-22 2014-08-21 Shinetsu Chemical Co 圖案形成方法及光阻組成物
JP5910361B2 (ja) 2011-07-14 2016-04-27 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP5651636B2 (ja) * 2011-07-28 2015-01-14 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法、及び、電子デバイス
JP5835148B2 (ja) 2011-08-26 2015-12-24 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP5675532B2 (ja) * 2011-08-30 2015-02-25 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、及び感活性光線性又は感放射線性膜
JP5780222B2 (ja) 2011-09-16 2015-09-16 信越化学工業株式会社 パターン形成方法
JP2013068675A (ja) * 2011-09-20 2013-04-18 Jsr Corp フォトレジスト組成物及びネガ型パターン形成方法
JP5659119B2 (ja) 2011-09-22 2015-01-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたレジスト膜、パターン形成方法、電子デバイスの製造方法、及び、電子デバイス
JP5807510B2 (ja) 2011-10-27 2015-11-10 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP5740287B2 (ja) * 2011-11-09 2015-06-24 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP5852851B2 (ja) * 2011-11-09 2016-02-03 富士フイルム株式会社 パターン形成方法、感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、及び、電子デバイスの製造方法
JP5692035B2 (ja) 2011-12-15 2015-04-01 信越化学工業株式会社 パターン形成方法及びレジスト組成物
JP2013130735A (ja) * 2011-12-21 2013-07-04 Jsr Corp ネガ型のレジストパターン形成方法及びフォトレジスト組成物
JP2013152450A (ja) 2011-12-27 2013-08-08 Fujifilm Corp パターン形成方法、感活性光線性又は感放射線性樹脂組成物、レジスト膜、電子デバイスの製造方法及び電子デバイス
JP5745439B2 (ja) * 2012-02-17 2015-07-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたパターン形成方法、レジスト膜及び電子デバイスの製造方法
GB2499663A (en) * 2012-02-27 2013-08-28 Conductive Inkjet Tech Ltd Protective coatings for photo-resists that are separately applied with different solvents but removed together using same solvent
JP6075124B2 (ja) 2012-03-15 2017-02-08 Jsr株式会社 現像液の精製方法
US8846295B2 (en) 2012-04-27 2014-09-30 International Business Machines Corporation Photoresist composition containing a protected hydroxyl group for negative development and pattern forming method using thereof
JP5802700B2 (ja) * 2012-05-31 2015-10-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、それを用いたレジスト膜、パターン形成方法、及び半導体デバイスの製造方法
JP6115322B2 (ja) 2012-06-19 2017-04-19 信越化学工業株式会社 パターン形成方法
JP5846061B2 (ja) 2012-07-09 2016-01-20 信越化学工業株式会社 パターン形成方法
TWI602015B (zh) 2012-07-18 2017-10-11 住友化學股份有限公司 光阻組成物及光阻圖案之產生方法
KR102182234B1 (ko) 2012-07-31 2020-11-24 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 포토레지스트 조성물 및 포토리소그래픽 패턴의 형성 방법
JP5737242B2 (ja) 2012-08-10 2015-06-17 信越化学工業株式会社 単量体、高分子化合物、レジスト組成物及びパターン形成方法
JP5780221B2 (ja) 2012-08-20 2015-09-16 信越化学工業株式会社 パターン形成方法
JP5962520B2 (ja) 2013-01-15 2016-08-03 信越化学工業株式会社 単量体、高分子化合物、レジスト材料及びパターン形成方法
JP5817744B2 (ja) 2013-01-17 2015-11-18 信越化学工業株式会社 パターン形成方法、レジスト組成物、高分子化合物及び単量体
JP5828325B2 (ja) 2013-01-28 2015-12-02 信越化学工業株式会社 パターン形成方法
US9057960B2 (en) 2013-02-04 2015-06-16 International Business Machines Corporation Resist performance for the negative tone develop organic development process
US8999625B2 (en) 2013-02-14 2015-04-07 International Business Machines Corporation Silicon-containing antireflective coatings including non-polymeric silsesquioxanes
JP5910536B2 (ja) 2013-02-22 2016-04-27 信越化学工業株式会社 単量体、高分子化合物、レジスト材料及びパターン形成方法
JP6118586B2 (ja) * 2013-02-28 2017-04-19 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP5803957B2 (ja) 2013-03-05 2015-11-04 信越化学工業株式会社 パターン形成方法及びレジスト組成物
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
JP6065862B2 (ja) 2013-04-10 2017-01-25 信越化学工業株式会社 パターン形成方法、レジスト組成物、高分子化合物及び単量体
US9164384B2 (en) 2013-04-26 2015-10-20 Shin-Etsu Chemical Co., Ltd. Patterning process and resist composition
JP6126551B2 (ja) * 2013-05-20 2017-05-10 富士フイルム株式会社 パターン剥離方法、電子デバイスの製造方法
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
JP6318601B2 (ja) * 2013-12-19 2018-05-09 住友化学株式会社 レジストパターンの製造方法
JP6371057B2 (ja) * 2013-12-27 2018-08-08 東京応化工業株式会社 パターン形成方法
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
JP5802785B2 (ja) * 2014-03-24 2015-11-04 富士フイルム株式会社 パターン形成方法及びレジスト組成物
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
JP6131910B2 (ja) 2014-05-28 2017-05-24 信越化学工業株式会社 レジスト組成物及びパターン形成方法
WO2016140057A1 (ja) * 2015-03-05 2016-09-09 Jsr株式会社 感放射線性組成物及びパターン形成方法
JP6394481B2 (ja) 2015-04-28 2018-09-26 信越化学工業株式会社 レジスト組成物及びパターン形成方法
JP6658204B2 (ja) * 2015-04-28 2020-03-04 信越化学工業株式会社 光酸発生剤、レジスト組成物及びパターン形成方法
WO2017135003A1 (ja) * 2016-02-02 2017-08-10 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性樹脂組成物

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945439A (ja) * 1982-08-23 1984-03-14 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン レジスト組成物
JPH0439665A (ja) * 1990-06-05 1992-02-10 Fujitsu Ltd 放射線感光レジストとパターン形成方法
JPH07261392A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd 化学増幅レジスト及びこれを用いるレジストパターンの形成方法
JP2000199953A (ja) * 1999-01-07 2000-07-18 Toshiba Corp パタ―ン形成方法
JP2007065024A (ja) * 2005-08-29 2007-03-15 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2008310314A (ja) * 2007-05-15 2008-12-25 Fujifilm Corp パターン形成方法

Family Cites Families (153)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2150691C2 (de) 1971-10-12 1982-09-09 Basf Ag, 6700 Ludwigshafen Lichtempfindliches Gemisch und Verwendung eines lichtempfindlichen Gemisches zur Herstellung einer Flachdruckplatte
US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
US4099062A (en) * 1976-12-27 1978-07-04 International Business Machines Corporation Electron beam lithography process
US4212935A (en) * 1978-02-24 1980-07-15 International Business Machines Corporation Method of modifying the development profile of photoresists
JPS5820420B2 (ja) * 1978-12-15 1983-04-22 富士通株式会社 パタ−ン形成方法
DE2922746A1 (de) 1979-06-05 1980-12-11 Basf Ag Positiv arbeitendes schichtuebertragungsmaterial
US4318976A (en) * 1980-10-27 1982-03-09 Texas Instruments Incorporated High gel rigidity, negative electron beam resists
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58187926A (ja) * 1982-04-28 1983-11-02 Toyo Soda Mfg Co Ltd 放射線ネガ型レジストの現像方法
US5073476A (en) 1983-05-18 1991-12-17 Ciba-Geigy Corporation Curable composition and the use thereof
JPS61226746A (ja) 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd 半導体集積回路製造用のスピンコート用レジスト組成物
JPS61226745A (ja) 1985-03-30 1986-10-08 Japan Synthetic Rubber Co Ltd 半導体集積回路製造用のスピンコート用レジスト組成物
JPS62153853A (ja) 1985-12-27 1987-07-08 Toshiba Corp 感光性組成物
JPS62123444A (ja) 1985-08-07 1987-06-04 Japan Synthetic Rubber Co Ltd ポジ型感放射線性樹脂組成物
JPH0616174B2 (ja) 1985-08-12 1994-03-02 三菱化成株式会社 ナフトキノンジアジド系化合物及び該化合物を含有するポジ型フオトレジスト組成物
JPS6269263A (ja) 1985-09-24 1987-03-30 Toshiba Corp 感光性組成物
EP0219294B1 (en) 1985-10-08 1989-03-01 Mitsui Petrochemical Industries, Ltd. Triphenol and polycarbonate polymer prepared therefrom
JPH083630B2 (ja) 1986-01-23 1996-01-17 富士写真フイルム株式会社 感光性組成物
EP0256031B1 (en) * 1986-01-29 1992-03-04 Hughes Aircraft Company Method for developing poly(methacrylic anhydride) resists
JPS6326653A (ja) 1986-07-21 1988-02-04 Tosoh Corp フオトレジスト材
JPS6334540A (ja) 1986-07-30 1988-02-15 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
JPS63146038A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
JPS63146029A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
GB8630129D0 (en) 1986-12-17 1987-01-28 Ciba Geigy Ag Formation of image
CA1296925C (en) 1988-04-07 1992-03-10 Patrick Bermingham Test system for caissons and piles
US4866304A (en) * 1988-05-23 1989-09-12 Motorola, Inc. BICMOS NAND gate
US4916210A (en) 1988-10-20 1990-04-10 Shell Oil Company Resin from alpha, alpha', alpha"-tris(4-cyanatophenyl)-1,3,5-triisopropylbenzene
DE3914407A1 (de) 1989-04-29 1990-10-31 Basf Ag Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial
JP2717602B2 (ja) 1990-01-16 1998-02-18 富士写真フイルム株式会社 感光性組成物
JP2711590B2 (ja) 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
ES2101710T3 (es) * 1990-12-20 1997-07-16 Siemens Ag Procedimiento fotolitografico.
DE4120172A1 (de) * 1991-06-19 1992-12-24 Hoechst Ag Strahlungsempfindliches gemisch, das als bindemittel neue polymere mit einheiten aus amiden von (alpha),(beta)-ungesaettigten carbonsaeuren enthaelt
US5296330A (en) 1991-08-30 1994-03-22 Ciba-Geigy Corp. Positive photoresists containing quinone diazide photosensitizer, alkali-soluble resin and tetra(hydroxyphenyl) alkane additive
US5268260A (en) * 1991-10-22 1993-12-07 International Business Machines Corporation Photoresist develop and strip solvent compositions and method for their use
JPH05207799A (ja) * 1991-11-04 1993-08-13 Xerox Corp ステッピングモータの制御システム
US5576143A (en) 1991-12-03 1996-11-19 Fuji Photo Film Co., Ltd. Light-sensitive composition
US5470693A (en) * 1992-02-18 1995-11-28 International Business Machines Corporation Method of forming patterned polyimide films
JP3057879B2 (ja) 1992-02-28 2000-07-04 株式会社日立製作所 半導体装置の製造方法
JPH05265212A (ja) 1992-03-17 1993-10-15 Fujitsu Ltd レジスト材料およびそれを用いるパターン形成方法
JP2753921B2 (ja) 1992-06-04 1998-05-20 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
JPH06138666A (ja) 1992-10-23 1994-05-20 Nikon Corp レジスト現像液
JPH06194847A (ja) 1992-12-22 1994-07-15 Tokuyama Sekiyu Kagaku Kk ネガ型フォトレジスト用現像液
JP3112229B2 (ja) 1993-06-30 2000-11-27 東京応化工業株式会社 ポジ型ホトレジスト組成物
JP3009320B2 (ja) 1993-12-24 2000-02-14 三菱電機株式会社 分解性樹脂および感光性樹脂組成物
US5866304A (en) * 1993-12-28 1999-02-02 Nec Corporation Photosensitive resin and method for patterning by use of the same
JP2715881B2 (ja) 1993-12-28 1998-02-18 日本電気株式会社 感光性樹脂組成物およびパターン形成方法
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JP3224115B2 (ja) 1994-03-17 2001-10-29 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
EP0691575B1 (en) 1994-07-04 2002-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JPH0862834A (ja) 1994-08-22 1996-03-08 Mitsubishi Chem Corp フォトレジスト組成物
JPH095988A (ja) 1995-06-21 1997-01-10 Mitsubishi Chem Corp 感放射線性塗布組成物
JP3562599B2 (ja) 1995-08-18 2004-09-08 大日本インキ化学工業株式会社 フォトレジスト組成物
JP3690847B2 (ja) 1995-09-20 2005-08-31 富士通株式会社 レジスト組成物及びパターン形成方法
JP3691897B2 (ja) * 1996-03-07 2005-09-07 富士通株式会社 レジスト材料及びレジストパターンの形成方法
TW329539B (en) * 1996-07-05 1998-04-11 Mitsubishi Electric Corp The semiconductor device and its manufacturing method
JP3071401B2 (ja) 1996-07-05 2000-07-31 三菱電機株式会社 微細パターン形成材料及びこれを用いた半導体装置の製造方法並びに半導体装置
US6593657B1 (en) * 1997-03-03 2003-07-15 Micron Technology, Inc. Contact integration article
TW372337B (en) * 1997-03-31 1999-10-21 Mitsubishi Electric Corp Material for forming micropattern and manufacturing method of semiconductor using the material and semiconductor apparatus
US5972570A (en) * 1997-07-17 1999-10-26 International Business Machines Corporation Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby
ID25549A (id) 1997-09-12 2000-10-12 Goodrich Co B F Komposisi tahan cahaya yang terdiri dari polimer polimer polisiklik dengan kelompok pendan asam labile
JP3363079B2 (ja) 1997-11-07 2003-01-07 株式会社東芝 レジストパターン形成方法
US6221567B1 (en) * 1998-01-14 2001-04-24 Fujitsu Limited Method of patterning polyamic acid layers
US6030541A (en) * 1998-06-19 2000-02-29 International Business Machines Corporation Process for defining a pattern using an anti-reflective coating and structure therefor
US6849377B2 (en) * 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
JP4327360B2 (ja) 1998-09-23 2009-09-09 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー ホトレジスト、ポリマーおよびマイクロリソグラフィの方法
JP2000321789A (ja) 1999-03-08 2000-11-24 Somar Corp レジストパターン形成用処理液及びレジストパターン形成方法
US7129199B2 (en) * 2002-08-12 2006-10-31 Air Products And Chemicals, Inc. Process solutions containing surfactants
US7521405B2 (en) * 2002-08-12 2009-04-21 Air Products And Chemicals, Inc. Process solutions containing surfactants
JP3950584B2 (ja) * 1999-06-29 2007-08-01 Ａｚエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物
JP2001056555A (ja) * 1999-08-20 2001-02-27 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト組成物及びそれを用いた感光材料
US6338934B1 (en) * 1999-08-26 2002-01-15 International Business Machines Corporation Hybrid resist based on photo acid/photo base blending
JP3444821B2 (ja) 1999-10-06 2003-09-08 富士写真フイルム株式会社 ポジ型フォトレジスト組成物
US6221568B1 (en) * 1999-10-20 2001-04-24 International Business Machines Corporation Developers for polychloroacrylate and polychloromethacrylate based resists
JP3351424B2 (ja) * 1999-12-28 2002-11-25 日本電気株式会社 スルホニウム塩化合物及びレジスト組成物、並びにそれを用いたパターン形成方法
JP2001215731A (ja) 2000-02-01 2001-08-10 Nippon Zeon Co Ltd レジスト現像液および現像方法
JP2002090991A (ja) 2000-09-13 2002-03-27 Fuji Photo Film Co Ltd ポジ型レジスト組成物
KR20040012688A (ko) 2000-11-29 2004-02-11 이 아이 듀폰 디 네모아 앤드 캄파니 중합체 중의 보호기, 포토레지스트 및 미세석판인쇄 방법
US6509134B2 (en) * 2001-01-26 2003-01-21 International Business Machines Corporation Norbornene fluoroacrylate copolymers and process for the use thereof
JP3660258B2 (ja) 2001-03-05 2005-06-15 株式会社半導体先端テクノロジーズ 微細レジストパターンおよび微細パターンの形成方法並びに半導体装置の製造方法
US6660459B2 (en) 2001-03-14 2003-12-09 Advanced Micro Devices, Inc. System and method for developing a photoresist layer with reduced pattern collapse
JP2002277862A (ja) 2001-03-21 2002-09-25 Nippon Hoso Kyokai <Nhk> 液晶光変調器及びそれを用いた表示装置
JP4645789B2 (ja) 2001-06-18 2011-03-09 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
DE10142590A1 (de) * 2001-08-31 2003-04-03 Infineon Technologies Ag Verfahren zur Seitenwandverstärkung von Resiststrukturen und zur Herstellung von Strukturen mit reduzierter Strukturgröße
JP2003122024A (ja) 2001-10-19 2003-04-25 Matsushita Electric Ind Co Ltd パターン形成方法
JP3822101B2 (ja) * 2001-12-26 2006-09-13 株式会社ルネサステクノロジ 感放射線組成物及びパタン形成方法及び半導体装置の製造方法
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP2003249437A (ja) 2002-02-26 2003-09-05 Sony Corp パターン形成方法および半導体装置の製造方法
JP3909829B2 (ja) 2002-03-18 2007-04-25 富士フイルム株式会社 ポジ型レジスト組成物
US6946410B2 (en) * 2002-04-05 2005-09-20 E. I. Du Pont De Nemours And Company Method for providing nano-structures of uniform length
GB0216621D0 (en) 2002-07-17 2002-08-28 Imaging Res Solutions Ltd Imaging compounds
JP3850767B2 (ja) * 2002-07-25 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
CA2493926A1 (en) * 2002-07-26 2004-02-05 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP2006156422A (ja) 2002-12-27 2006-06-15 Nikon Corp パターン形成方法、電子デバイス製造方法、及び電子デバイス
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
MXPA05008118A (es) * 2003-02-19 2005-09-30 Ciba Sc Holding Ag Derivados de oxima halogenados y el uso de los mismos como acidos latentes.
TW200424767A (en) 2003-02-20 2004-11-16 Tokyo Ohka Kogyo Co Ltd Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
US7674847B2 (en) 2003-02-21 2010-03-09 Promerus Llc Vinyl addition polycyclic olefin polymers prepared with non-olefinic chain transfer agents and uses thereof
US7090964B2 (en) * 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
KR20050098957A (ko) 2003-02-25 2005-10-12 도오꾜오까고오교 가부시끼가이샤 포토레지스트 조성물 및 레지스트 패턴의 형성 방법
JP4360957B2 (ja) 2003-03-27 2009-11-11 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4825405B2 (ja) * 2003-05-08 2011-11-30 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー フォトレジスト組成物およびそれらの調製方法
US7016754B2 (en) * 2003-05-08 2006-03-21 Onwafer Technologies, Inc. Methods of and apparatus for controlling process profiles
CN100549051C (zh) * 2003-06-26 2009-10-14 捷时雅株式会社 光刻胶聚合物组合物
JP4533639B2 (ja) * 2003-07-22 2010-09-01 富士フイルム株式会社 感刺激性組成物、化合物及び該感刺激性組成物を用いたパターン形成方法
JP4265766B2 (ja) 2003-08-25 2009-05-20 東京応化工業株式会社 液浸露光プロセス用レジスト保護膜形成用材料、該保護膜形成材料からなるレジスト保護膜、および該レジスト保護膜を用いたレジストパターン形成方法
TWI366067B (en) * 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
JP3993549B2 (ja) 2003-09-30 2007-10-17 株式会社東芝 レジストパターン形成方法
US20050170277A1 (en) 2003-10-20 2005-08-04 Luke Zannoni Fluorinated photoresists prepared, deposited, developed and removed in carbon dioxide
US7449573B2 (en) * 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
US7119025B2 (en) * 2004-04-08 2006-10-10 Micron Technology, Inc. Methods of eliminating pattern collapse on photoresist patterns
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
JP4989047B2 (ja) 2004-07-02 2012-08-01 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 浸漬リソグラフィ用の組成物及びプロセス
EP1621927B1 (en) * 2004-07-07 2018-05-23 FUJIFILM Corporation Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4697406B2 (ja) * 2004-08-05 2011-06-08 信越化学工業株式会社 高分子化合物，レジスト保護膜材料及びパターン形成方法
US20060081782A1 (en) * 2004-10-18 2006-04-20 Technology Management Consulting Services, Inc. Remote detector system
WO2006052921A2 (en) * 2004-11-08 2006-05-18 Eastman Chemical Company Cyclodextrin solubilizers for liquid and semi-solid formulations
US7129016B2 (en) * 2004-11-12 2006-10-31 International Business Machines Corporation Positive resist containing naphthol functionality
CN101137938B (zh) 2004-11-25 2011-07-06 Nxp股份有限公司 光刻方法
JP2006227174A (ja) 2005-02-16 2006-08-31 Ricoh Co Ltd レジスト現像液及びパターン形成方法
US7960087B2 (en) * 2005-03-11 2011-06-14 Fujifilm Corporation Positive photosensitive composition and pattern-forming method using the same
US7981595B2 (en) * 2005-03-23 2011-07-19 Asml Netherlands B.V. Reduced pitch multiple exposure process
EP1720072B1 (en) 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
US7205093B2 (en) * 2005-06-03 2007-04-17 International Business Machines Corporation Topcoats for use in immersion lithography
KR100688570B1 (ko) * 2005-08-31 2007-03-02 삼성전자주식회사 식각 마스크 패턴 형성용 코팅 조성물 및 이를 이용한반도체 소자의 미세 패턴 형성 방법
JP2007071978A (ja) 2005-09-05 2007-03-22 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法
TWI403843B (zh) * 2005-09-13 2013-08-01 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
US7750101B2 (en) 2005-09-28 2010-07-06 Daicel Chemical Industries, Ltd. Polycyclic ester containing cyano group and lactone skeleton
TW200728330A (en) 2005-09-29 2007-08-01 Jsr Corp Radiation sensitive resin composition for optical waveguides, optical waveguide and method for manufacturing optical waveguide
JP2007108581A (ja) 2005-10-17 2007-04-26 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法
US7396482B2 (en) * 2005-10-28 2008-07-08 Infineon Technologies Ag Post exposure resist bake
JP4810401B2 (ja) 2005-11-08 2011-11-09 富士フイルム株式会社 ポジ型レジスト組成物及び該ポジ型レジスト組成物を用いたパターン形成方法
TWI430030B (zh) * 2005-11-08 2014-03-11 Fujifilm Corp 正型光阻組成物及使用此正型光阻組成物之圖案形成方法
JP2007140188A (ja) 2005-11-18 2007-06-07 Fujifilm Corp ポジ型感光性組成物及びそれを用いたパターン形成方法
JP5114021B2 (ja) * 2006-01-23 2013-01-09 富士フイルム株式会社 パターン形成方法
JP5151038B2 (ja) * 2006-02-16 2013-02-27 富士通株式会社 レジストカバー膜形成材料、レジストパターンの形成方法、半導体装置及びその製造方法
US7521172B2 (en) * 2006-04-28 2009-04-21 International Business Machines Corporation Topcoat material and use thereof in immersion lithography processes
JP4895030B2 (ja) * 2006-10-04 2012-03-14 信越化学工業株式会社 高分子化合物、レジスト保護膜材料、及びパターン形成方法
US7771914B2 (en) * 2006-10-17 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
JP4554665B2 (ja) * 2006-12-25 2010-09-29 富士フイルム株式会社 パターン形成方法、該パターン形成方法に用いられる多重現像用ポジ型レジスト組成物、該パターン形成方法に用いられるネガ現像用現像液及び該パターン形成方法に用いられるネガ現像用リンス液
US8530148B2 (en) * 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) * 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
EP2138898B1 (en) * 2007-04-13 2014-05-21 FUJIFILM Corporation Method for pattern formation, and use of resist composition in said method
US8034547B2 (en) * 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
EP1980911A3 (en) 2007-04-13 2009-06-24 FUJIFILM Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
JP4617337B2 (ja) * 2007-06-12 2011-01-26 富士フイルム株式会社 パターン形成方法
KR100989565B1 (ko) * 2007-06-12 2010-10-25 후지필름 가부시키가이샤 네가티브 톤 현상용 레지스트 조성물 및 이것을 사용한 패턴형성방법
JP4590431B2 (ja) * 2007-06-12 2010-12-01 富士フイルム株式会社 パターン形成方法
EP2157477B1 (en) * 2007-06-12 2014-08-06 FUJIFILM Corporation Use of a resist composition for negative working-type development, and method for pattern formation using the resist composition
US20080311530A1 (en) * 2007-06-15 2008-12-18 Allen Robert D Graded topcoat materials for immersion lithography
NZ586871A (en) * 2008-01-17 2013-05-31 Tensegrity Technologies Inc Designing a foot orthotic using an array of movable pins applied in sequential series to plantar surface of foot
US7987064B2 (en) * 2008-08-01 2011-07-26 International Business Machines Corporation Dynamic determination of a minimal configured product to achieve desired test coverage
US8574810B2 (en) * 2009-04-27 2013-11-05 Tokyo Electron Limited Dual tone development with a photo-activated acid enhancement component in lithographic applications
US8568964B2 (en) * 2009-04-27 2013-10-29 Tokyo Electron Limited Flood exposure process for dual tone development in lithographic applications

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5945439A (ja) * 1982-08-23 1984-03-14 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン レジスト組成物
JPH0439665A (ja) * 1990-06-05 1992-02-10 Fujitsu Ltd 放射線感光レジストとパターン形成方法
JPH07261392A (ja) * 1994-03-17 1995-10-13 Fujitsu Ltd 化学増幅レジスト及びこれを用いるレジストパターンの形成方法
JP2000199953A (ja) * 1999-01-07 2000-07-18 Toshiba Corp パタ―ン形成方法
JP2007065024A (ja) * 2005-08-29 2007-03-15 Fujifilm Corp ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2008310314A (ja) * 2007-05-15 2008-12-25 Fujifilm Corp パターン形成方法

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