JP4429603B2 - 電界効果トランジスタ及び電界効果トランジスタの生産方法 - Google Patents
電界効果トランジスタ及び電界効果トランジスタの生産方法 Download PDFInfo
- Publication number
- JP4429603B2 JP4429603B2 JP2002547243A JP2002547243A JP4429603B2 JP 4429603 B2 JP4429603 B2 JP 4429603B2 JP 2002547243 A JP2002547243 A JP 2002547243A JP 2002547243 A JP2002547243 A JP 2002547243A JP 4429603 B2 JP4429603 B2 JP 4429603B2
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- organic
- binder
- effect transistor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 64
- 239000011230 binding agent Substances 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 52
- 239000007787 solid Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 229920000642 polymer Polymers 0.000 claims description 36
- 239000002904 solvent Substances 0.000 claims description 25
- 125000003118 aryl group Chemical group 0.000 claims description 21
- 229920001577 copolymer Polymers 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 125000003107 substituted aryl group Chemical group 0.000 claims description 7
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 6
- 229920001519 homopolymer Polymers 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 80
- 239000000203 mixture Substances 0.000 description 44
- 239000000243 solution Substances 0.000 description 33
- 239000010410 layer Substances 0.000 description 31
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 30
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 27
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 26
- -1 amine salts Chemical class 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 239000011541 reaction mixture Substances 0.000 description 21
- 238000002360 preparation method Methods 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000012153 distilled water Substances 0.000 description 15
- 230000037230 mobility Effects 0.000 description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 13
- 238000003818 flash chromatography Methods 0.000 description 12
- 239000012044 organic layer Substances 0.000 description 11
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 10
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 9
- 239000003921 oil Substances 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- 239000008186 active pharmaceutical agent Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000002244 precipitate Substances 0.000 description 8
- 239000004793 Polystyrene Substances 0.000 description 7
- 229920002223 polystyrene Polymers 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 229920006395 saturated elastomer Polymers 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 6
- 239000000969 carrier Substances 0.000 description 6
- 239000012043 crude product Substances 0.000 description 6
- 239000000284 extract Substances 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 239000000741 silica gel Substances 0.000 description 6
- 229910002027 silica gel Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 239000011780 sodium chloride Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 5
- CYPYTURSJDMMMP-WVCUSYJESA-N (1e,4e)-1,5-diphenylpenta-1,4-dien-3-one;palladium Chemical compound [Pd].[Pd].C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1.C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 CYPYTURSJDMMMP-WVCUSYJESA-N 0.000 description 4
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000706 filtrate Substances 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000007641 inkjet printing Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- XYLMUPLGERFSHI-UHFFFAOYSA-N alpha-Methylstyrene Chemical compound CC(=C)C1=CC=CC=C1 XYLMUPLGERFSHI-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 3
- 125000004093 cyano group Chemical group *C#N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 125000000623 heterocyclic group Chemical group 0.000 description 3
- 238000004128 high performance liquid chromatography Methods 0.000 description 3
- 125000005647 linker group Chemical group 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 3
- 229940078552 o-xylene Drugs 0.000 description 3
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 3
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 3
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- 229910052714 tellurium Inorganic materials 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- NCWDBNBNYVVARF-UHFFFAOYSA-N 1,3,2-dioxaborolane Chemical compound B1OCCO1 NCWDBNBNYVVARF-UHFFFAOYSA-N 0.000 description 2
- CYKLQIOPIMZZBZ-UHFFFAOYSA-N 2,7-dibromo-9,9-dioctylfluorene Chemical compound C1=C(Br)C=C2C(CCCCCCCC)(CCCCCCCC)C3=CC(Br)=CC=C3C2=C1 CYKLQIOPIMZZBZ-UHFFFAOYSA-N 0.000 description 2
- SXNCMLQAQIGJDO-UHFFFAOYSA-N 2-bromo-5-(5-bromothiophen-2-yl)thiophene Chemical compound S1C(Br)=CC=C1C1=CC=C(Br)S1 SXNCMLQAQIGJDO-UHFFFAOYSA-N 0.000 description 2
- MBHPOBSZPYEADG-UHFFFAOYSA-N 2-bromo-9,9-dimethylfluorene Chemical compound C1=C(Br)C=C2C(C)(C)C3=CC=CC=C3C2=C1 MBHPOBSZPYEADG-UHFFFAOYSA-N 0.000 description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 2
- ROFVEXUMMXZLPA-UHFFFAOYSA-N Bipyridyl Chemical group N1=CC=CC=C1C1=CC=CC=N1 ROFVEXUMMXZLPA-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229920002633 Kraton (polymer) Polymers 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 2
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 125000002252 acyl group Chemical group 0.000 description 2
- 150000003973 alkyl amines Chemical group 0.000 description 2
- 239000012223 aqueous fraction Substances 0.000 description 2
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 2
- MUALRAIOVNYAIW-UHFFFAOYSA-N binap Chemical group C1=CC=CC=C1P(C=1C(=C2C=CC=CC2=CC=1)C=1C2=CC=CC=C2C=CC=1P(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 MUALRAIOVNYAIW-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012455 biphasic mixture Substances 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- AIXAANGOTKPUOY-UHFFFAOYSA-N carbachol Chemical group [Cl-].C[N+](C)(C)CCOC(N)=O AIXAANGOTKPUOY-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- WDECIBYCCFPHNR-UHFFFAOYSA-N chrysene Chemical compound C1=CC=CC2=CC=C3C4=CC=CC=C4C=CC3=C21 WDECIBYCCFPHNR-UHFFFAOYSA-N 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000003480 eluent Substances 0.000 description 2
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 2
- 239000012065 filter cake Substances 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- APCOQCLKCAFINS-UHFFFAOYSA-N n,n-bis(4-bromophenyl)-4-butan-2-ylaniline Chemical compound C1=CC(C(C)CC)=CC=C1N(C=1C=CC(Br)=CC=1)C1=CC=C(Br)C=C1 APCOQCLKCAFINS-UHFFFAOYSA-N 0.000 description 2
- JJPAJOYWVKBYOS-UHFFFAOYSA-N n-(4-chlorophenyl)-9,9-dimethylfluoren-2-amine Chemical compound C1=C2C(C)(C)C3=CC=CC=C3C2=CC=C1NC1=CC=C(Cl)C=C1 JJPAJOYWVKBYOS-UHFFFAOYSA-N 0.000 description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- LXNAVEXFUKBNMK-UHFFFAOYSA-N palladium(II) acetate Substances [Pd].CC(O)=O.CC(O)=O LXNAVEXFUKBNMK-UHFFFAOYSA-N 0.000 description 2
- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 229910000160 potassium phosphate Inorganic materials 0.000 description 2
- 235000011009 potassium phosphates Nutrition 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 238000010020 roller printing Methods 0.000 description 2
- 125000000547 substituted alkyl group Chemical group 0.000 description 2
- 125000005556 thienylene group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 125000004001 thioalkyl group Chemical group 0.000 description 2
- 125000005259 triarylamine group Chemical group 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 description 1
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- FKASFBLJDCHBNZ-UHFFFAOYSA-N 1,3,4-oxadiazole Chemical compound C1=NN=CO1 FKASFBLJDCHBNZ-UHFFFAOYSA-N 0.000 description 1
- UCCUXODGPMAHRL-UHFFFAOYSA-N 1-bromo-4-iodobenzene Chemical compound BrC1=CC=C(I)C=C1 UCCUXODGPMAHRL-UHFFFAOYSA-N 0.000 description 1
- VMKOFRJSULQZRM-UHFFFAOYSA-N 1-bromooctane Chemical compound CCCCCCCCBr VMKOFRJSULQZRM-UHFFFAOYSA-N 0.000 description 1
- OSOUNOBYRMOXQQ-UHFFFAOYSA-N 1-chloro-3-methylbenzene Chemical compound CC1=CC=CC(Cl)=C1 OSOUNOBYRMOXQQ-UHFFFAOYSA-N 0.000 description 1
- GWQSENYKCGJTRI-UHFFFAOYSA-N 1-chloro-4-iodobenzene Chemical compound ClC1=CC=C(I)C=C1 GWQSENYKCGJTRI-UHFFFAOYSA-N 0.000 description 1
- ZEMDSNVUUOCIED-UHFFFAOYSA-N 1-phenyl-4-[4-[4-(4-phenylphenyl)phenyl]phenyl]benzene Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 ZEMDSNVUUOCIED-UHFFFAOYSA-N 0.000 description 1
- AVXFJPFSWLMKSG-UHFFFAOYSA-N 2,7-dibromo-9h-fluorene Chemical compound BrC1=CC=C2C3=CC=C(Br)C=C3CC2=C1 AVXFJPFSWLMKSG-UHFFFAOYSA-N 0.000 description 1
- FXSCJZNMWILAJO-UHFFFAOYSA-N 2-bromo-9h-fluorene Chemical compound C1=CC=C2C3=CC=C(Br)C=C3CC2=C1 FXSCJZNMWILAJO-UHFFFAOYSA-N 0.000 description 1
- KUJYDIFFRDAYDH-UHFFFAOYSA-N 2-thiophen-2-yl-5-[5-[5-(5-thiophen-2-ylthiophen-2-yl)thiophen-2-yl]thiophen-2-yl]thiophene Chemical compound C1=CSC(C=2SC(=CC=2)C=2SC(=CC=2)C=2SC(=CC=2)C=2SC(=CC=2)C=2SC=CC=2)=C1 KUJYDIFFRDAYDH-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical compound C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- MNEPURVJQJNPQW-UHFFFAOYSA-N 4-[1-[4-(diethylamino)phenyl]-4,4-diphenylbuta-1,3-dienyl]-n,n-diethylaniline Chemical compound C1=CC(N(CC)CC)=CC=C1C(C=1C=CC(=CC=1)N(CC)CC)=CC=C(C=1C=CC=CC=1)C1=CC=CC=C1 MNEPURVJQJNPQW-UHFFFAOYSA-N 0.000 description 1
- NVVVQTNTLIAISI-UHFFFAOYSA-N 4-butan-2-ylaniline Chemical compound CCC(C)C1=CC=C(N)C=C1 NVVVQTNTLIAISI-UHFFFAOYSA-N 0.000 description 1
- QSNSCYSYFYORTR-UHFFFAOYSA-N 4-chloroaniline Chemical compound NC1=CC=C(Cl)C=C1 QSNSCYSYFYORTR-UHFFFAOYSA-N 0.000 description 1
- RHPVVNRNAHRJOQ-UHFFFAOYSA-N 4-methyl-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1NC1=CC=C(C)C=C1 RHPVVNRNAHRJOQ-UHFFFAOYSA-N 0.000 description 1
- IWUQQWLGRYJQQX-UHFFFAOYSA-N 9,9-diethyl-1-hexylfluorene Chemical compound C12=CC=CC=C2C(CC)(CC)C2=C1C=CC=C2CCCCCC IWUQQWLGRYJQQX-UHFFFAOYSA-N 0.000 description 1
- RXACYPFGPNTUNV-UHFFFAOYSA-N 9,9-dioctylfluorene Chemical compound C1=CC=C2C(CCCCCCCC)(CCCCCCCC)C3=CC=CC=C3C2=C1 RXACYPFGPNTUNV-UHFFFAOYSA-N 0.000 description 1
- 229920003026 Acene Polymers 0.000 description 1
- 241000913992 Aprion Species 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- SFNGIUKZIFUJSC-UHFFFAOYSA-N N-(4-chlorophenyl)-2,4-dimethylaniline Chemical compound Cc1ccc(Nc2ccc(Cl)cc2)c(C)c1 SFNGIUKZIFUJSC-UHFFFAOYSA-N 0.000 description 1
- 150000001422 N-substituted pyrroles Chemical class 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- OKJPEAGHQZHRQV-UHFFFAOYSA-N Triiodomethane Natural products IC(I)I OKJPEAGHQZHRQV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- VZTDIZULWFCMLS-UHFFFAOYSA-N ammonium formate Chemical compound [NH4+].[O-]C=O VZTDIZULWFCMLS-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 238000010936 aqueous wash Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000012267 brine Substances 0.000 description 1
- 229940045348 brown mixture Drugs 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000012230 colorless oil Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- 229920000359 diblock copolymer Polymers 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 230000005524 hole trap Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- ROEZWWCNLPHPDT-UHFFFAOYSA-N n,n-bis(4-chlorophenyl)-9,9-dimethylfluoren-2-amine Chemical compound C1=C2C(C)(C)C3=CC=CC=C3C2=CC=C1N(C=1C=CC(Cl)=CC=1)C1=CC=C(Cl)C=C1 ROEZWWCNLPHPDT-UHFFFAOYSA-N 0.000 description 1
- LCESBGLXUNYBAZ-UHFFFAOYSA-N n-[4-(dibenzo[1,2-a:1',2'-e][7]annulen-11-ylideneamino)phenyl]-4-methyl-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)N=C1C2=CC=CC=C2C=CC2=CC=CC=C21)C1=CC=C(C)C=C1 LCESBGLXUNYBAZ-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical compound N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000006384 oligomerization reaction Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- GPRIERYVMZVKTC-UHFFFAOYSA-N p-quaterphenyl Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 GPRIERYVMZVKTC-UHFFFAOYSA-N 0.000 description 1
- 238000007649 pad printing Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 150000008379 phenol ethers Chemical class 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000314 poly p-methyl styrene Polymers 0.000 description 1
- 229920002587 poly(1,3-butadiene) polymer Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000323 polyazulene Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 239000012258 stirred mixture Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 239000006188 syrup Substances 0.000 description 1
- 235000020357 syrup Nutrition 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 150000003613 toluenes Chemical class 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- NHDIQVFFNDKAQU-UHFFFAOYSA-N tripropan-2-yl borate Chemical compound CC(C)OB(OC(C)C)OC(C)C NHDIQVFFNDKAQU-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000003828 vacuum filtration Methods 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 150000003738 xylenes Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
Landscapes
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
- Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Description
本発明は、電界効果トランジスタ(FET)ならびにそれらを製造するための材料および方法に関する。
a)有機半導体;および、
b)10−6Scm−1未満の固有導電率と1000Hzにおいて3.3未満の誘電率εとを有する有機バインダー、
を含む、電界効果トランジスタが提供される。有機バインダーは、好ましくは少なくとも95%、より好ましくは少なくとも98%、および特にすべての原子が、水素、フッ素および炭素原子であるバインダーである。
a)10−6Scm−1未満の固有導電率および好ましくは10−5cm2V−1s−1を超える電界効果移動度を有する有機半導体、ならびに
b)10−6Scm−1未満の固有導電率と、1000Hzにおいて3未満およびより好ましくは2.8未満でありかつ好ましくは1.7を超え、特に2.0〜2.8である誘電率とを有する有機バインダー、ただし、該バインダーがポリスチレンのホモポリマーである場合、その分子量は20000ドルトン未満および好ましくは15000ドルトン未満であり、かつ好ましくは1000ドルトンより大きいという条件が付く、
を含む。
a)有機半導体、ならびに、
b)少なくとも95%、好ましくは少なくとも98%、および好ましくはすべての原子が、水素、フッ素および炭素原子であるバインダー、ただし、該炭化水素バインダーがポリスチレンのホモポリマーである場合、その分子量は20000ドルトン未満および好ましくは15000ドルトン未満であり、かつ好ましくは1000ドルトンより大きいという条件が付く、
を含む連続半導体層を含む。半導体は、n型またはp型であることができる。
共役炭化水素ポリマー、例えば、ポリアセン、ポリフェニレン、ポリ(フェニレンビニレン)、ポリフルオレンと、そのような共役炭化水素ポリマーのオリゴマー;縮合芳香族炭化水素、例えば、テトラセン、クリセン、ペンタセン、ピレン、ペリレン、コロネン;パラ位が置換されているオリゴマー状フェニレン、例えば、p−クアテルフェニル(p−4P)、p−キンクフェニル(p−5P)、p−セキシフェニル(p−6P);共役ヘテロ環式ポリマー、例えば、ポリ(3−置換チオフェン)、ポリ(3,4−二置換チオフェン)、ポリベンゾチオフェン、ポリイソチアナフテン、ポリ(N−置換ピロール)、ポリ(3−置換ピロール)、ポリ(3,4−二置換ピロール)、ポリフラン、ポリピリジン、ポリ−1,3,4−オキサジアゾール、ポリイソチアナフテン、ポリ(N−置換アニリン)、ポリ(2−置換アニリン)、ポリ(3−置換アニリン)、ポリ(2,3−二置換アニリン)、ポリアズレン、ポリピレン;ピラゾリン化合物;ポリセレノフェン;ポリベンゾフラン;ポリインドール;ポリピリダジン;ベンジジン化合物;スチルベン化合物;トリアジン;置換されている金属ポルフィリンもしくは金属を含まないポルフィリンか、フタロシアニンか、またはナフタロシアニン;C60およびC70フラーレン;N,N’−ジアルキル、置換ジアルキル、ジアリールまたは置換ジアリール−1,4,5,8−ナフタレンテトラカルボン酸ジイミド;N,N’−ジアルキル、置換ジアルキル、ジアリールまたは置換ジアリール3,4,9,10−ペリレンテトラカルボン酸ジイミド;バトフェナントロリン;ジフェノキノン;1,3,4−オキサジアゾール;11,11,12,12−テトラシアノナフト−2,6−キノジメタン;α,α’−ビス(ジチエノ[3,2−b2’3’−d]チオフェン);2,8−ジアルキル、置換ジアルキル、ジアリールまたは置換ジアリールアントラジチオフェン;2,2’−ビベンゾ[1,2−b:4,5−b’]ジチオフェン。半導体の好ましいクラスは、式1の反復単位を有する:
本発明において有用であることができる他のアミン材料は、テトラキス(N,N’−アリール)ビアリールジアミン、ビス(N,N’−[置換フェニル])、ビス(N,N’−フェニル)−1,1’−ビフェニル−4,4’−ジアミンと、それらの4−メチル、2,4−ジメチルおよび/または3−メチル誘導体;トリフェニルアミンとそのアルキルおよびアリール誘導体ならびにポリ(N−フェニル−1,4−フェニレンアミン);N−ジベンゾ[a,d]シクロヘプテン−5−イリデン−N’,N’−ジ−p−トリル−ベンゼン−1,4−ジアミン、(9,9−ジメチル−9H−フルオレン−2−イル)−ジ−p−トリル−アミンおよびそれらの誘導体である。本発明に同様に用いてもよい関連材料が、特許DE3610649、EP0669654−A(=米国特許第5681664号)、EP0765106−A、WO97−33193、WO98−06773、米国特許第5677096号および米国特許第5279916号に記載されている。
ポリマーは、一般式4の反復単位を有する:
バインダーは、通常、共役結合、特に共役二重結合および/または芳香環を含有していることが好ましい。それは、好ましくは膜、より好ましくは軟質膜を形成すべきである。スチレンとαメチルスチレンのコポリマー、例えば、スチレン、αメチルスチレンおよびブタジエンのコポリマーを好適に用いることができる。
本発明の他の特徴に従って、電界効果トランジスタの生産方法であって、基板を、有機半導体、バインダーおよび溶媒を含むか、または有機半導体および反応してバインダーを形成することができる材料を含む液層で、コーティングし、そして該液層を、溶媒を蒸発させるか、または場合によっては該材料を反応させてバインダーを形成させることにより、半導体およびバインダーを含む固体層に転化する工程を含む方法を提供する。ここで、バインダーは、少なくとも95%、好ましくは少なくとも98%、および好ましくはすべての原子が、水素、フッ素および炭素原子である膜形成性バインダーであるか、あるいは、10−6S/cm未満の固有導電率と、3.3未満、好ましくは3未満およびより好ましくは2.8未満でありかつ好ましくは1.7を超え、例えば2.0〜2.8である誘電率とを有する有機バインダーであり、ただし、該炭化水素バインダーがポリスチレンのホモポリマーである場合、その分子量は20000ドルトン未満および好ましくは15000ドルトン未満であり、かつ好ましくは1000ドルトンより大きいという条件が付く。
トランジスタは、従来の設計のものであることができる。
実施例
すべての合成的調製を、乾燥した脱酸素化二窒素(deoxygenated dinitrogen)雰囲気下で実施した。反応生成物の精製には、適切な溶媒(例えば:ヘキサン、トルエンなど)を溶離剤として用いて、乾燥フラッシュカラムクロマトグラフィーを使用した。必要な場合、許容しうる電気的特質の材料を得るために、このプロセスを繰り返した。
半導体の調製
実施例1 末端がキャップされている2,4−ジメチルポリマー(式12)の調製
実施例2 2,4−ジメチルポリマー(式13)の調製
10% Pd/C(12.5g)および蒸留水(145mL)を、2Lフラスコに入れた。その混合物を十分に撹拌すると、懸濁液が得られた。その後、ギ酸アンモニウム(100g)と、これに続いて上記で調製した材料の一部[トルエン(425mL)中に26g溶解したもの]を加えた。このトルエン溶液の約1/2を加えた後、フラスコおよび内容物を70℃に加熱した(発泡した)。その後、残りのトルエン溶液を30分かけて加えた。温度は、60〜70℃で24時間維持した。室温に冷却後、混合物を濾過し、トルエン溶液を分離して取り出し、3×500mLの水で洗浄し、濃縮した。得られた固体をテトラヒドロフラン(150mL)に溶解し、撹拌メタノール(600mL)中に沈殿させた。固体を濾過により取り出した後、それらをメタノールで洗浄し、真空オーブンで乾燥した。その後、粗生成物を乾燥フラッシュカラムクロマトグラフィーにより精製すると、最終生成物が淡黄色粉末(23.8g)の試料Aとして得られた。
分析:Cl含量<50ppm(Mw=7400)
2,4−ジメチルポリマー(式13)の分別。
i)2−ブロモ−9,9−ジメチル−9H−フルオレンの調製
ii)(4’−クロロフェニル)−(9,9−ジメチル−9H−フルオレン−2−イル)−アミンの調製
iii)N,N−ビス(4−クロロフェニル)−(9,9−ジメチル−9H−フルオレン−2−イル)−アミンの調製
iv)フッ素ポリマー(式14)の調製
i)2,7−ジブロモ−9,9−ジ−n−オクチル−9H−フルオレンの調製
ii)2,7−(9,9−ジ−n−オクチル−9H−フルオレン−2−イル)−ビス[1,3,2]ジオキサボロランの調製
iii)N,N−ビス(4’−ブロモフェニル)−4−sec−ブチルフェニルアミンの調製
iv)コポリマー(式15)の調製
実施例5 N,N−ビス(4−トリル)−(9,9−ビメチル−9H−フルオレン−2−イル)−アミン(式16)の調製
粗生成物を、乾燥フラッシュカラムクロマトグラフィーにより精製すると、生成物が淡黄色固体として得られた(22.9g)。
実施例6 9,9ジ−2−エチルヘキシルフルオレンとビチオフェンのコポリマー(式17)の調製
10mL三頸反応フラスコに、2,7−ビス(1,3,2−ジオキサボロラン−2−イル)−9,9’−(2−エチルヘキシル)フルオレン(0.5g)、5,5’−ジブロモ−2,2’−ビチオフェン(0.3g)、リン酸カリウム(35%w/w水溶液、0.81g)、ジオキサン(4.2mL)およびトルエン(1.4mL)を入れた。その後、酢酸パラジウム(II)(0.2mg)およびトリ(o−トリル)ホスフィン(1.6mg)を加え、反応混合物を3時間還流した。その後、混合物を室温に冷却し、さらに16時間撹拌した。その後、反応混合物をデカントすると、固体残渣(A)および暗黄色溶液(B)が得られた。溶液(B)を、希塩酸(2M、5mL)および水(3×30mL)で継続的に洗浄した。その後、それを濃縮すると、橙色固体が得られた(0.34g);Mw=20600。
位置規則性ポリ(3−ヘキシルチオフェン)を、R.D.McCulloughおよびR.S.Loeweにより米国特許第6166172号に記載されている手順に従って調製した。180mgの純粋な材料を単離した。Mw=21800。
10mL三頸反応フラスコに、2,7−ビス(1,3,2−ジオキサボロラン−2−イル)−9,9’−ジオクチルフルオレン(0.5g)、5,5’−ジブロモ−2,2’−ビチオフェン(0.3g)、リン酸カリウム(35%w/w水溶液、0.81g)、ジオキサン(4.2mL)およびトルエン(1.4mL)を入れた。その後、酢酸パラジウム(II)(0.2mg)およびトリ(o−トリル)ホスフィン(1.6mg)を加え、反応混合物を14時間還流した。反応混合物をトルエン(50mL)で希釈し、有機層を残留固体から分離した。この溶液を、希塩酸(2M、10mL)、水(3×50mL)で継続的に洗浄した後、濃縮すると、橙色固体が得られた。その固体をトルエン(10mL)に溶解し、乾燥フラッシュカラムクロマトグラフィー(シリカゲル)により精製すると、橙色固体(0.33g)が得られた。Mw=17300。
‘syntec’=トリアリールアミンオリゴマー(Syntec CAS番号65181−78−4)
‘syntec2’=2,9−ジ(ペント−3−イル)−アントラ[2,1,9−def:6,5,10−d’e’f’]ジイソキノリン−1,3,8,10−テトロン(CAS#110590−81−3、Syntecから)
‘takasago’=1,1−ジフェニル−4,4−ビス(パラジエチルアミノフェニル)−ブタジエン(Takasagoから)
として使用した。
電界効果移動度の決定
材料の電界効果移動度を、Holland et al,J.Appl.Phys.,1994,75,7954に記載されている技術を用いて試験した。
1=ポリカーボネートZ20(ESPRIT CAS#25135−52−8)
2=ポリ−4−メチルスチレン(Aldrichカタログ番号18,227−3)
3=ポリスチレンco−αメチルスチレン(Aldrichカタログ番号45,721−3)
4=ポリ−αメチルスチレン(Aldrichカタログ番号19,184−1)
5=KRATON G1701E(ポリスチレン−(エチレン−プロピレン)ジブロック(Univar))
そのような試験構造体の利点は、すべての素子を予備製造して、活性有機層を単一工程で適用できる点である。したがって、異なる材料でつくられたデバイスを、簡単かつ確実に比較することができる。トランジスタの特徴的パラメーターは、互いに向き合っているドレイン電極とソース電極の長さ(W=20mm)と、それら互いからの距離(L=10μm)である。
電気的測定では、トランジスタ試料を試料ホルダーに取り付けた。Karl Suss PH100小型プローブヘッドを用いて、ゲート電極、ドレイン電極およびソース電極にマイクロプローブを接続した。これらをHewlett−Packard 4155Bパラメーター分析器に連結した。ドレイン電圧を−2Vに設定し、ゲート電圧を+2から−20Vまで0.5V段階で走査した。|VG|>|VDS|のとき、ソース−ドレイン電流は、VGに対し直線的に変動する。したがって、電界効果移動度を、方程式2により与えられるIDS対VGの勾配から算出することができる。
VDS=−20V、VG=0Vで、IOFF=IDS
膜を形成する有機半導体の場合、電界効果移動度を直接測定することができる。有機半導体が膜を形成しない場合、異なる量の有機半導体とバインダーを含有する一連の膜を形成させ、各膜について電界効果移動度を測定し、その結果を100%有機半導体の組成物に外挿することにより、電界効果移動度を評価することができる。
1.蒸着に用いた溶媒はTHFであった
2.Mw2500の画分
3.測定に用いた方法は、Dimitrakopoulosにより記載されたものであった
4.測定に用いた方法は、Dimitrakopoulosにより記載されたものであった
5.蒸着に用いた溶媒はクロロベンゼンであった;測定に用いた方法は、Dimitrakopoulosにより記載されたものであった
6.蒸着に用いた溶媒はアニソールであった。溶液を、工業的なドロップ・オン・デマンド方式の圧電印刷ヘッドに通して、予備製造したトランジスタ基板上にインクジェット印刷した。
Claims (7)
- 連続半導体層がソース電極とドレイン電極の間に電界効果チャネルを形成する電界効果トランジスタであって、該連続半導体層が、
a)有機半導体
ここで該有機半導体は、
式1及び式10の反復単位を有するコポリマーである;および、
b)10−6Scm−1未満の固有導電率と1000Hzにおいて3.3未満の誘電率とを有する有機バインダー、
を含む、電界効果トランジスタ。 - 該有機半導体が10−6Scm−1未満の固有導電率を有する、請求項1に記載の電界効果トランジスタ。
- 該有機バインダーがスチレンのホモポリマーであり、その分子量が20000ドルトン未満である、請求項1または2に記載の電界効果トランジスタ。
- 該有機バインダーが1000Hzにおいて3.0未満の誘電率を有する、請求項3に記載の電界効果トランジスタ。
- 請求項1〜5のいずれかに記載の電界効果トランジスタの生産方法であって、
・基板を、該有機半導体、該有機バインダーおよび溶媒を含むか、または該有機半導体および反応して該有機バインダーを形成することができる材料を含む液層で、コーティングし;そして、
・該液層を、該溶媒を蒸発させるか、または該材料を反応させて該バインダーを形成させることにより、該有機半導体および該有機バインダーを含む固体層に転化する、
ことを含む方法。 - 請求項1〜5のいずれかに記載の電界効果トランジスタの生産方法であって、
・基板を、該有機半導体および反応して該有機バインダーを形成することができる材料を含む液層でコーティングし;そして、
・該液層を、該材料を反応させて該有機バインダーを形成させることにより、該有機半導体および該有機バインダーを含む固体層に転化する、
ことを含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0028867.0A GB0028867D0 (en) | 2000-11-28 | 2000-11-28 | Field effect translators,methods for the manufacture thereof and materials therefor |
PCT/GB2001/005145 WO2002045184A1 (en) | 2000-11-28 | 2001-11-21 | Field effect transistors and materials and methods for their manufacture |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009172778A Division JP2010028123A (ja) | 2000-11-28 | 2009-07-24 | 電界効果トランジスタならびにそれらを製造するための材料および方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004525501A JP2004525501A (ja) | 2004-08-19 |
JP4429603B2 true JP4429603B2 (ja) | 2010-03-10 |
Family
ID=9903936
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002547243A Expired - Lifetime JP4429603B2 (ja) | 2000-11-28 | 2001-11-21 | 電界効果トランジスタ及び電界効果トランジスタの生産方法 |
JP2009172778A Pending JP2010028123A (ja) | 2000-11-28 | 2009-07-24 | 電界効果トランジスタならびにそれらを製造するための材料および方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009172778A Pending JP2010028123A (ja) | 2000-11-28 | 2009-07-24 | 電界効果トランジスタならびにそれらを製造するための材料および方法 |
Country Status (11)
Country | Link |
---|---|
US (1) | US7095044B2 (ja) |
EP (1) | EP1340270B1 (ja) |
JP (2) | JP4429603B2 (ja) |
KR (1) | KR100824026B1 (ja) |
CN (1) | CN100416882C (ja) |
AT (1) | ATE350769T1 (ja) |
AU (2) | AU2081802A (ja) |
CA (1) | CA2427222C (ja) |
DE (1) | DE60125819T2 (ja) |
GB (1) | GB0028867D0 (ja) |
WO (1) | WO2002045184A1 (ja) |
Families Citing this family (209)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10141624A1 (de) * | 2001-08-24 | 2003-03-06 | Covion Organic Semiconductors | Lösungen polymerer Halbleiter |
DE10151036A1 (de) * | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
KR100949304B1 (ko) * | 2001-12-19 | 2010-03-23 | 메르크 파텐트 게엠베하 | 유기 절연체를 포함하는 유기 전계 효과 트랜지스터 |
US6777529B2 (en) * | 2002-01-11 | 2004-08-17 | Xerox Corporation | Polythiophenes and devices thereof |
US6621099B2 (en) * | 2002-01-11 | 2003-09-16 | Xerox Corporation | Polythiophenes and devices thereof |
JP4545373B2 (ja) * | 2002-11-07 | 2010-09-15 | 旭化成株式会社 | 有機半導体薄膜及びその製造方法 |
AU2003290272A1 (en) * | 2002-12-20 | 2004-07-14 | Avecia Limited | Improvements in and relating to organic semiconducting materials |
JP5025074B2 (ja) * | 2003-02-13 | 2012-09-12 | 株式会社リコー | 有機薄膜トランジスタ及び有機薄膜トランジスタの製造方法 |
DE602004005685T2 (de) * | 2003-03-07 | 2007-12-27 | Koninklijke Philips Electronics N.V. | Verfahren zur herstellung einer elektronischen anordnung |
WO2005004251A1 (en) * | 2003-07-07 | 2005-01-13 | Philips Intellectual Property & Standards Gmbh | Multifluorinated conductor material for leds for improving the light outcoupling |
US7399504B2 (en) * | 2003-09-16 | 2008-07-15 | Dow Global Technologies Inc. | Method of preparing an insoluble polymer film on a substrate from a soluble polymer containing labile solubilizing groups |
ATE475971T1 (de) | 2003-11-28 | 2010-08-15 | Merck Patent Gmbh | Organische halbleiterschicht-formulierungen mit polyacenen und organischen binderpolymeren |
DE102004007777A1 (de) * | 2004-02-18 | 2005-09-08 | Covion Organic Semiconductors Gmbh | Lösungen organischer Halbleiter |
ATE518258T1 (de) * | 2004-04-27 | 2011-08-15 | Creator Technology Bv | Verfahren zur bildung eines organischen halbleiterbauelements durch eine schmelztechnik |
KR100668763B1 (ko) * | 2004-04-27 | 2007-01-12 | 경상대학교산학협력단 | 액정성을 가지는 새로운 고분자 반도체 화합물 및 그 화합물을 사용한 유기 박막 트랜지스터 |
KR101069519B1 (ko) | 2004-07-08 | 2011-09-30 | 삼성전자주식회사 | 올리고티오펜과 n-형 방향족 화합물을 주쇄에 교호로 포함하는 유기 반도체 고분자 |
EP1794218B1 (de) * | 2004-10-01 | 2020-05-13 | Merck Patent GmbH | Elektronische vorrichtungen enthaltend organische halbleiter |
JP4883898B2 (ja) * | 2004-11-18 | 2012-02-22 | パナソニック株式会社 | 電子デバイスおよびそれを用いた電子機器 |
US7198977B2 (en) * | 2004-12-21 | 2007-04-03 | Eastman Kodak Company | N,N′-di(phenylalky)-substituted perylene-based tetracarboxylic diimide compounds as n-type semiconductor materials for thin film transistors |
KR101102222B1 (ko) * | 2005-02-04 | 2012-01-05 | 삼성전자주식회사 | 전기장 처리를 이용한 유기 박막 트랜지스터의 제조방법 |
US7935960B2 (en) | 2005-05-12 | 2011-05-03 | Merck Patent Gmbh | Polyacene and semiconductor formulation |
JP2008545631A (ja) * | 2005-05-21 | 2008-12-18 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング | オリゴマーポリアセンおよび半導体調製物 |
US20070267055A1 (en) * | 2005-07-14 | 2007-11-22 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
US20070131270A1 (en) * | 2005-07-14 | 2007-06-14 | Russell Gaudiana | Window with photovoltaic cell |
US20080006324A1 (en) * | 2005-07-14 | 2008-01-10 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
US8158881B2 (en) * | 2005-07-14 | 2012-04-17 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
US7772485B2 (en) * | 2005-07-14 | 2010-08-10 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US20070181179A1 (en) * | 2005-12-21 | 2007-08-09 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
US7781673B2 (en) * | 2005-07-14 | 2010-08-24 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
US20070075630A1 (en) * | 2005-09-30 | 2007-04-05 | Florian Dotz | Organic compositions |
US7569415B2 (en) | 2005-09-30 | 2009-08-04 | Alcatel-Lucent Usa Inc. | Liquid phase fabrication of active devices including organic semiconductors |
US7488834B2 (en) | 2005-09-30 | 2009-02-10 | Alcatel-Lucent Usa Inc. | Organic semiconductors |
JP4888043B2 (ja) * | 2005-12-27 | 2012-02-29 | セイコーエプソン株式会社 | 有機半導体用組成物、トランジスタの製造方法、アクティブマトリクス装置の製造方法、電気光学装置の製造方法および電子機器の製造方法 |
JP2009524226A (ja) * | 2006-01-21 | 2009-06-25 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 有機半導体配合物を備える電子短チャネル装置 |
JP2007220772A (ja) * | 2006-02-15 | 2007-08-30 | Idemitsu Kosan Co Ltd | 有機エレクトロルミネッセンス用高分子化合物及びその製造方法 |
JP5032781B2 (ja) * | 2006-03-09 | 2012-09-26 | 株式会社リコー | 有機薄膜トランジスタ |
JP5130659B2 (ja) * | 2006-05-31 | 2013-01-30 | 住友化学株式会社 | 有機薄膜トランジスタ |
US8164087B2 (en) * | 2006-06-12 | 2012-04-24 | Alcatel Lucent | Organic semiconductor compositions with nanoparticles |
WO2008024378A2 (en) | 2006-08-24 | 2008-02-28 | E. I. Du Pont De Nemours And Company | Hole transport polymers |
US8008424B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with thiazole-containing polymer |
US8008421B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with silole-containing polymer |
US8106386B2 (en) * | 2006-12-28 | 2012-01-31 | Alcatel Lucent | Organic semiconductor compositions including plasticizers |
US8465848B2 (en) * | 2006-12-29 | 2013-06-18 | E I Du Pont De Nemours And Company | Benzofluorenes for luminescent applications |
JP5144938B2 (ja) | 2007-02-02 | 2013-02-13 | 住友化学株式会社 | 高分子発光素子、高分子化合物、組成物、液状組成物及び導電性薄膜 |
JP5369384B2 (ja) * | 2007-03-29 | 2013-12-18 | 住友化学株式会社 | 有機光電変換素子及びその製造に有用な重合体 |
JP5214910B2 (ja) * | 2007-05-28 | 2013-06-19 | 国立大学法人九州大学 | 電界効果トランジスタ |
CN102603459A (zh) | 2007-06-01 | 2012-07-25 | E.I.内穆尔杜邦公司 | 电荷传输化合物和含该化合物的材料 |
WO2009016107A1 (en) * | 2007-07-30 | 2009-02-05 | Basf Se | Method for depositing a semiconducting layer from a liquid |
KR101379616B1 (ko) | 2007-07-31 | 2014-03-31 | 삼성전자주식회사 | 계면특성이 향상된 유기박막트랜지스터 및 그의 제조방법 |
US8063399B2 (en) | 2007-11-19 | 2011-11-22 | E. I. Du Pont De Nemours And Company | Electroactive materials |
US20090211633A1 (en) * | 2008-02-21 | 2009-08-27 | Konarka Technologies Inc. | Tandem Photovoltaic Cells |
JP5480510B2 (ja) | 2008-03-31 | 2014-04-23 | 住友化学株式会社 | 有機半導体組成物、並びに有機薄膜及びこれを備える有機薄膜素子 |
US8343381B1 (en) | 2008-05-16 | 2013-01-01 | E I Du Pont De Nemours And Company | Hole transport composition |
JP5428104B2 (ja) * | 2008-05-23 | 2014-02-26 | 日本化薬株式会社 | 有機半導体組成物 |
JP5581607B2 (ja) | 2008-06-05 | 2014-09-03 | 住友化学株式会社 | 高分子化合物及びそれを用いた有機トランジスタ |
WO2010010791A1 (ja) * | 2008-07-22 | 2010-01-28 | Dic株式会社 | 有機トランジスタ及びその製造方法 |
JP5625271B2 (ja) | 2008-07-29 | 2014-11-19 | 住友化学株式会社 | 高分子化合物及びそれを用いた発光素子 |
GB2467316B (en) | 2009-01-28 | 2014-04-09 | Pragmatic Printing Ltd | Electronic devices, circuits and their manufacture |
US8455606B2 (en) * | 2008-08-07 | 2013-06-04 | Merck Patent Gmbh | Photoactive polymers |
US8551624B2 (en) * | 2008-12-01 | 2013-10-08 | E I Du Pont De Nemours And Company | Electroactive materials |
JP2012510474A (ja) * | 2008-12-01 | 2012-05-10 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 電気活性材料 |
KR101616149B1 (ko) * | 2008-12-04 | 2016-04-27 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 전기활성 재료 |
US20100140593A1 (en) * | 2008-12-10 | 2010-06-10 | Xerox Corporation | Organic thin-film transistors |
CN102239230B (zh) * | 2008-12-12 | 2014-06-25 | E.I.内穆尔杜邦公司 | 光敏组合物和用所述组合物制得的电子器件 |
US8759818B2 (en) | 2009-02-27 | 2014-06-24 | E I Du Pont De Nemours And Company | Deuterated compounds for electronic applications |
JP5567656B2 (ja) * | 2009-04-03 | 2014-08-06 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 電気活性材料 |
AU2010281942A1 (en) | 2009-08-12 | 2012-04-05 | Merck Patent Gmbh | Phenanthro[1,10,9,8-c,d,e,f,g]carbazole polymers and their use as organic semiconductors |
GB2473200B (en) | 2009-09-02 | 2014-03-05 | Pragmatic Printing Ltd | Structures comprising planar electronic devices |
KR20120091144A (ko) * | 2009-09-29 | 2012-08-17 | 이 아이 듀폰 디 네모아 앤드 캄파니 | 발광 응용을 위한 중수소화된 화합물 |
EP2493887A4 (en) | 2009-10-29 | 2013-06-19 | Du Pont | DETERERATED COMPOUNDS FOR ELECTRONIC APPLICATIONS |
US8617720B2 (en) | 2009-12-21 | 2013-12-31 | E I Du Pont De Nemours And Company | Electroactive composition and electronic device made with the composition |
CN102686669B (zh) | 2009-12-25 | 2015-02-11 | 住友化学株式会社 | 组合物以及使用该组合物的发光元件 |
US20120256537A1 (en) | 2009-12-25 | 2012-10-11 | Sumitomo Chemical Company, Limited | Composition and light emitting element using the composition |
US8212243B2 (en) | 2010-01-22 | 2012-07-03 | Eastman Kodak Company | Organic semiconducting compositions and N-type semiconductor devices |
US8309394B2 (en) * | 2010-01-22 | 2012-11-13 | Eastman Kodak Company | Method of making N-type semiconductor devices |
KR101108540B1 (ko) * | 2010-02-01 | 2012-01-30 | 건국대학교 산학협력단 | 패터닝이 가능한 브러쉬 코팅공정을 적용한 유기전자소자의 제조방법 |
GB2490463A (en) | 2010-02-15 | 2012-10-31 | Merck Patent Gmbh | Semiconducting polymers |
RU2012145007A (ru) | 2010-03-24 | 2014-04-27 | Мерк Патент Гмбх | Полимеры 8, 9-дигидробензо[def]карбазола и их применение в качестве органических полупроводников |
EP3243818B1 (en) | 2010-04-19 | 2021-02-17 | Raynergy Tek Inc. | Polymers of benzodithiophene and their use as organic semiconductors |
EP2381503B1 (en) | 2010-04-23 | 2013-04-17 | Polyphotonix Limited | Method for manufacturing material for use in manufacturing electroluminescent organic semiconductor devices |
WO2012003919A2 (en) | 2010-07-08 | 2012-01-12 | Merck Patent Gmbh | Semiconducting polymers |
KR101792901B1 (ko) | 2010-07-09 | 2017-11-02 | 메르크 파텐트 게엠베하 | 반도전성 중합체 |
US9178165B2 (en) | 2010-07-13 | 2015-11-03 | Sumitomo Chemical Company, Limited | Organic semiconductor composition, organic thin film, and organic thin film transistor having same |
WO2012019683A2 (en) | 2010-08-13 | 2012-02-16 | Merck Patent Gmbh | Anthra[2,3-b:7,6-b']dithiophene derivatives and their use as organic semiconductors |
GB201013820D0 (en) * | 2010-08-18 | 2010-09-29 | Cambridge Display Tech Ltd | Low contact resistance organic thin film transistors |
DE112011102915T5 (de) | 2010-09-04 | 2013-07-11 | Merck Patent Gmbh | Konjugierte Polymere |
RU2013115831A (ru) | 2010-09-10 | 2014-10-20 | Мерк Патент Гмбх | АНТРА[2,3-b:7,6-b]ДИТИОФЕНОВЫЕ ПРОИЗВОДНЫЕ И ИХ ПРИМЕНЕНИЕ В КАЧЕСТВЕ ОРГАНИЧЕСКИХ ПОЛУПРОВОДНИКОВ |
DE112011103524T5 (de) | 2010-10-20 | 2013-10-17 | Merck Patent Gmbh | Konjugierte Polymere |
KR20130124347A (ko) | 2010-12-06 | 2013-11-13 | 메르크 파텐트 게엠베하 | 비선형 아센 유도체 및 이의 유기 반도체로서의 용도 |
GB2501199A (en) | 2010-12-17 | 2013-10-16 | Merck Patent Gmbh | Conjugated polymers |
JP5727038B2 (ja) | 2010-12-20 | 2015-06-03 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company | 電子技術応用のための組成物 |
US9373801B2 (en) | 2011-01-28 | 2016-06-21 | Merck Patent Gmbh | Flavanthrene derivatives and their use as organic semiconductors |
JP2014515043A (ja) | 2011-03-11 | 2014-06-26 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 共役ポリマー |
JP2014515010A (ja) | 2011-03-11 | 2014-06-26 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | ジナフト[2,3−a:2’,3’−h]フェナジンおよび有機半導体としてのそれらの使用 |
EP2503616A1 (en) | 2011-03-21 | 2012-09-26 | Polyphotonix Limited | Emissive element for light emitting device, light emitting device and method for manufacturing such element and device |
CN103443865A (zh) | 2011-03-25 | 2013-12-11 | 默克专利股份有限公司 | 吡咯并[3,2-b]吡咯-2,5-二酮和它们作为有机半导体的用途 |
EP2693508A4 (en) | 2011-03-28 | 2014-08-27 | Sumitomo Chemical Co | ELECTRONIC DEVICE, POLYMER COMPOUND, ORGANIC COMPOUND AND PROCESS FOR PREPARING THE POLYMER COMPOUND |
JP2014517853A (ja) | 2011-04-18 | 2014-07-24 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 共役ポリマー |
EP2710011A1 (en) | 2011-05-16 | 2014-03-26 | Merck Patent GmbH | Conjugated polymers |
GB201108865D0 (en) | 2011-05-26 | 2011-07-06 | Ct For Process Innovation The Ltd | Semiconductor compounds |
GB201108864D0 (en) | 2011-05-26 | 2011-07-06 | Ct For Process Innovation The Ltd | Transistors and methods of making them |
GB2491810B (en) | 2011-05-31 | 2018-03-21 | Smartkem Ltd | Organic semiconductor compositions |
US9190622B2 (en) | 2011-06-01 | 2015-11-17 | Merck Patent Gmbh | Hybrid ambipolar TFTs |
CN103619903B (zh) | 2011-06-28 | 2016-12-07 | 默克专利股份有限公司 | 作为有机半导体的引达省衍生物 |
JP2014532084A (ja) | 2011-07-08 | 2014-12-04 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 共役ポリマー |
BR112014001176A2 (pt) | 2011-07-19 | 2017-01-10 | Merck Patent Gmbh | semicondutores orgânicos |
EP2734527B1 (en) | 2011-07-21 | 2018-01-10 | Merck Patent GmbH | Conjugated polymers |
EP2736911A1 (en) | 2011-07-27 | 2014-06-04 | Merck Patent GmbH | Small molecules and their use as organic semiconductors |
WO2013045014A1 (en) | 2011-09-28 | 2013-04-04 | Merck Patent Gmbh | Conjugated polymers |
US20140252279A1 (en) | 2011-10-20 | 2014-09-11 | Merck Patent Gmbh | Organic semiconductors |
CN104105734A (zh) | 2012-02-15 | 2014-10-15 | 默克专利股份有限公司 | 共轭聚合物 |
EP2814863B1 (en) | 2012-02-15 | 2017-11-15 | Merck Patent GmbH | Conjugated polymers |
JP2015513572A (ja) | 2012-02-16 | 2015-05-14 | メルク パテント ゲーエムベーハー | 有機半導体ポリマー |
TWI635111B (zh) | 2012-03-16 | 2018-09-11 | 馬克專利公司 | 共軛聚合物 |
CN104321362B (zh) | 2012-03-27 | 2017-02-22 | 住友化学株式会社 | 高分子化合物及使用其的发光元件 |
GB2516207A (en) | 2012-04-25 | 2015-01-14 | Merck Patent Gmbh | Conjugated polymers |
EP2841484B1 (en) | 2012-04-25 | 2021-02-10 | Flexenable Limited | Conjugated polymers |
JP2015529689A (ja) | 2012-06-04 | 2015-10-08 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 有機半導体 |
KR20150024386A (ko) | 2012-06-05 | 2015-03-06 | 메르크 파텐트 게엠베하 | 소분자 및 유기 반도체로서의 이의 용도 |
EP2867271A1 (en) | 2012-07-02 | 2015-05-06 | Merck Patent GmbH | Conjugated polymers |
US20150155494A1 (en) | 2012-07-13 | 2015-06-04 | Merck Patent Gmbh | Organic electronic device comprising an organic semiconductors formulation |
WO2014023392A1 (en) | 2012-08-09 | 2014-02-13 | dedeMERCK PATENT GMBH | Organic semiconducting formulation |
EP2888307B1 (en) | 2012-08-24 | 2017-09-06 | Merck Patent GmbH | Conjugated polymers |
US20150333263A1 (en) | 2012-12-07 | 2015-11-19 | Merck Patent Gmbh | Polymer comprising a naphthalene group and its use in organic electronic devices |
CN104854175A (zh) | 2012-12-18 | 2015-08-19 | 默克专利股份有限公司 | 包含噻二唑基的聚合物、这种聚合物的制备和它在有机电子器件中的用途 |
JP2014146637A (ja) | 2013-01-28 | 2014-08-14 | Sony Corp | 電子デバイス及びその製造方法、並びに、積層構造体の形成方法 |
JP5940104B2 (ja) * | 2013-02-07 | 2016-06-29 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料 |
WO2014202184A1 (en) | 2013-06-21 | 2014-12-24 | Merck Patent Gmbh | Conjugated polymers |
JP5867650B2 (ja) | 2013-07-17 | 2016-02-24 | 住友化学株式会社 | 組成物およびそれを用いた発光素子 |
US9356248B2 (en) | 2013-08-16 | 2016-05-31 | Palo Alto Research Center Incorporated | Organic thin-film transistor |
JP5715664B2 (ja) * | 2013-08-21 | 2015-05-13 | 日本化薬株式会社 | 有機半導体組成物 |
EP3037398B1 (en) | 2013-08-22 | 2021-03-10 | Sumitomo Chemical Company, Limited | Method for manufacturing chemical compound |
EP3044217B1 (en) | 2013-09-11 | 2019-03-13 | Merck Patent GmbH | Cyclohexadiene fullerene derivatives |
CN104513262A (zh) | 2013-09-30 | 2015-04-15 | 默克专利股份有限公司 | 氮杂硼杂苯衍生物,它们的合成及其在有机电子器件中的用途 |
KR20160076528A (ko) | 2013-10-22 | 2016-06-30 | 메르크 파텐트 게엠베하 | 공액 중합체 |
CN105765028A (zh) | 2013-11-06 | 2016-07-13 | 默克专利股份有限公司 | 共轭聚合物 |
EP3074451B1 (en) | 2013-11-28 | 2017-12-27 | Merck Patent GmbH | Novel polycyclic polymer comprising thiophene units, a method of producing and uses of such polymer |
US10128449B2 (en) | 2014-01-08 | 2018-11-13 | Sumitomo Chemical Company, Limited | Metal complex and light emitting device using the same |
WO2015124285A1 (en) | 2014-02-19 | 2015-08-27 | Merck Patent Gmbh | Methoxyaryl surface modifier and organic electronic devices comprising such methoxyaryl surface modifier |
JP6576955B2 (ja) | 2014-02-20 | 2019-09-18 | イノベーションラブ、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングInnovationlab Gmbh | 共役ポリマー |
JP6140626B2 (ja) | 2014-03-03 | 2017-05-31 | 富士フイルム株式会社 | 有機薄膜トランジスタ及びその製造方法 |
JP6106114B2 (ja) | 2014-03-03 | 2017-03-29 | 富士フイルム株式会社 | 有機薄膜トランジスタ及びその製造方法 |
KR20160124913A (ko) | 2014-03-17 | 2016-10-28 | 메르크 파텐트 게엠베하 | 유기 반도체성 화합물 |
US10388879B2 (en) | 2014-03-31 | 2019-08-20 | Nano-C, Inc. | Fused bis-aryl fullerene derivatives |
US10636974B2 (en) | 2014-04-24 | 2020-04-28 | The Trustees Of Columbia University In The City Of New York | Molecular compositions, materials, and methods for efficient multiple exciton generation |
US10374162B2 (en) | 2014-06-17 | 2019-08-06 | Merck Patent Gmbh | Fullerene derivatives |
JP6133511B2 (ja) * | 2014-07-18 | 2017-05-24 | 富士フイルム株式会社 | 有機半導体膜形成用組成物、並びに、有機半導体素子及びその製造方法 |
US9914742B2 (en) | 2014-07-29 | 2018-03-13 | Merck Patent Gmbh | Tetra-heteroaryl indacenodithiophene-based polycyclic polymers and their use |
KR102300261B1 (ko) | 2014-08-28 | 2021-09-09 | 스미또모 가가꾸 가부시키가이샤 | 고분자 화합물 및 그것을 사용한 발광 소자 |
JP6205074B2 (ja) * | 2014-09-24 | 2017-09-27 | 富士フイルム株式会社 | 有機半導体素子及びその製造方法、化合物、有機半導体膜形成用組成物、並びに、有機半導体膜 |
JP6328535B2 (ja) * | 2014-10-30 | 2018-05-23 | 富士フイルム株式会社 | 有機半導体膜形成用組成物、有機半導体膜、及び、有機半導体素子 |
EP3032599A1 (en) | 2014-12-12 | 2016-06-15 | Solvay SA | Organic semiconductor composition |
US9853230B2 (en) | 2015-02-17 | 2017-12-26 | Xerox Corporation | Printable nanoparticle conductor ink with improved charge injection |
EP3070756B9 (en) | 2015-03-18 | 2021-11-03 | Raynergy Tek Inc. | Semiconductor mixtures comprising nanoparticles |
WO2016180515A1 (en) | 2015-05-12 | 2016-11-17 | Merck Patent Gmbh | Thiadiazolopyridine polymers, their synthesis and their use |
JP2018525487A (ja) | 2015-08-06 | 2018-09-06 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 有機半導体組成物および有機電子デバイスの製造におけるそれらの使用 |
EP3151297A1 (de) | 2015-09-30 | 2017-04-05 | InnovationLab GmbH | Konjugierte polymere mit thermisch abspaltbaren oxalatseitengruppen |
EP3389104B1 (en) | 2015-12-07 | 2020-09-16 | Sumitomo Chemical Company, Limited | Light emitting element |
US10094863B2 (en) * | 2016-03-02 | 2018-10-09 | Texas Instruments Incorporated | High-resolution power electronics measurements |
CN108779128B (zh) | 2016-03-15 | 2022-03-04 | 天光材料科技股份有限公司 | 有机半导体 |
EP3430654B9 (en) | 2016-03-15 | 2021-08-25 | Raynergy Tek Inc. | Organic semiconductors |
WO2017159703A1 (ja) * | 2016-03-16 | 2017-09-21 | 富士フイルム株式会社 | 有機半導体組成物、有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ |
US20200115387A1 (en) | 2016-07-08 | 2020-04-16 | Merck Patent Gmbh | Organic semiconductors |
US10759775B2 (en) | 2016-07-08 | 2020-09-01 | Merck Patent Gmbh | Organic semiconducting compounds |
KR102436596B1 (ko) | 2016-08-11 | 2022-08-25 | 메르크 파텐트 게엠베하 | 테트라아자피렌 코어를 포함하는 유기 반도체성 화합물 |
CN109563104B (zh) | 2016-08-22 | 2023-04-04 | 天光材料科技股份有限公司 | 有机半导体化合物 |
US20190189925A1 (en) | 2016-08-29 | 2019-06-20 | Merck Patent Gmbh | Organic semiconductors |
US11271166B2 (en) | 2016-09-29 | 2022-03-08 | Sumitomo Chemical Company, Limited | Light emitting device and composition useful for production of same light emitting device |
TWI812597B (zh) | 2016-10-05 | 2023-08-21 | 天光材料科技股份有限公司 | 有機半導體性化合物 |
EP3306690B1 (en) | 2016-10-05 | 2022-09-07 | Raynergy Tek Inc. | Organic semiconducting compounds |
KR20190059922A (ko) | 2016-10-05 | 2019-05-31 | 메르크 파텐트 게엠베하 | 유기 반도체성 화합물 |
CN109891616B (zh) | 2016-10-31 | 2023-09-29 | 天光材料科技股份有限公司 | 有机半导体化合物 |
EP3333170B1 (en) | 2016-12-06 | 2020-04-29 | Merck Patent GmbH | Asymmetrical polycyclic compounds for use in organic semiconductors |
WO2018162447A1 (en) | 2017-03-09 | 2018-09-13 | Merck Patent Gmbh | Organic semiconducting compounds |
EP3618133A4 (en) | 2017-04-27 | 2021-01-13 | Sumitomo Chemical Company Limited | ELECTROLUMINESCENT ELEMENT |
US11532790B2 (en) | 2017-04-27 | 2022-12-20 | Sumitomo Chemical Company, Limited | Composition and light emitting device using the same |
US11005043B2 (en) | 2017-08-11 | 2021-05-11 | Raynergy Tek Incorporation | Organic semiconducting polymer |
EP3680945B1 (en) | 2017-09-06 | 2023-09-06 | Sumitomo Chemical Company Limited | Light emitting element |
CN111094298A (zh) | 2017-09-13 | 2020-05-01 | 默克专利股份有限公司 | 有机半导体化合物 |
KR20200051027A (ko) | 2017-09-13 | 2020-05-12 | 플렉스인에이블 리미티드 | 유기 반도체 층을 포함하는 전자 디바이스용 전극 |
EP3691416A4 (en) | 2017-09-29 | 2021-04-21 | Sumitomo Chemical Company Limited | LIGHT EMITTING DEVICE |
CN111315796B (zh) | 2017-11-02 | 2023-11-24 | 天光材料科技股份有限公司 | 有机半导体化合物 |
EP3707191A1 (en) | 2017-11-10 | 2020-09-16 | Merck Patent GmbH | Organic semiconducting compounds |
WO2019154973A1 (en) | 2018-02-12 | 2019-08-15 | Merck Patent Gmbh | Organic semiconducting compounds |
WO2019185578A1 (en) | 2018-03-28 | 2019-10-03 | Merck Patent Gmbh | Organic semiconducting compounds |
US20210070770A1 (en) | 2018-03-28 | 2021-03-11 | Raynergy Tek Inc. | Organic semiconducting compounds |
EP3787052B1 (en) | 2018-04-26 | 2024-06-12 | Sumitomo Chemical Company Limited | Light emitting element |
KR20210002570A (ko) | 2018-04-26 | 2021-01-08 | 스미또모 가가꾸 가부시키가이샤 | 블록 공중합체 및 그것을 사용한 발광 소자 |
US20210280791A1 (en) | 2018-04-27 | 2021-09-09 | Raynergy Tek Incorporation | Organic semiconducting polymers |
US20210273172A1 (en) | 2018-06-12 | 2021-09-02 | Sumitomo Chemical Company, Limited | Organic electroluminescent device |
JP7421476B2 (ja) * | 2018-07-03 | 2024-01-24 | 保土谷化学工業株式会社 | 分子主鎖にターフェニル構造を含むトリアリールアミン高分子量化合物およびこれらの高分子量化合物を含む有機エレクトロルミネッセンス素子 |
US20220131078A1 (en) | 2018-07-13 | 2022-04-28 | Flexenable Ltd | Organic semiconducting compounds |
US20210367159A1 (en) | 2018-09-06 | 2021-11-25 | Raynergy Tek Incorporation | Organic semiconducting compounds |
JP6595069B1 (ja) | 2018-10-25 | 2019-10-23 | 住友化学株式会社 | 発光素子 |
JP6595070B1 (ja) | 2018-10-25 | 2019-10-23 | 住友化学株式会社 | 発光素子 |
WO2020114742A1 (en) | 2018-12-04 | 2020-06-11 | Merck Patent Gmbh | Self-assembled monolayer for electrode modification and device comprising such self-assembled monolayer |
WO2020161052A1 (en) | 2019-02-06 | 2020-08-13 | Merck Patent Gmbh | Organic semiconducting polymers |
US20230073741A1 (en) | 2019-03-07 | 2023-03-09 | Raynergy Tek Inc. | Organic semiconducting composition |
CN113631627A (zh) | 2019-03-19 | 2021-11-09 | 天光材料科技股份有限公司 | 有机半导体 |
JP6934967B2 (ja) | 2019-03-29 | 2021-09-15 | 住友化学株式会社 | 発光素子及び発光素子用組成物 |
JP6941711B2 (ja) | 2019-07-26 | 2021-09-29 | 住友化学株式会社 | 金属錯体及びそれを含有する発光素子 |
JP6956287B2 (ja) | 2020-04-21 | 2021-11-02 | 住友化学株式会社 | 金属錯体、組成物及び発光素子 |
US11930694B2 (en) | 2020-06-08 | 2024-03-12 | University Of Waterloo | Polymer semiconductors containing acrylyl or acrylyl-like side chain and their devices |
JP2022024744A (ja) | 2020-07-28 | 2022-02-09 | 住友化学株式会社 | 組成物及び発光素子 |
JP7079883B2 (ja) | 2020-09-24 | 2022-06-02 | 住友化学株式会社 | 発光素子及び組成物 |
JP7058792B2 (ja) | 2020-09-24 | 2022-04-22 | 住友化学株式会社 | 発光素子及び組成物 |
JP7086258B2 (ja) | 2020-09-24 | 2022-06-17 | 住友化学株式会社 | 発光素子及び組成物 |
JP7015406B1 (ja) | 2020-09-24 | 2022-02-02 | 住友化学株式会社 | 発光素子及び組成物 |
JP7086259B2 (ja) | 2020-09-24 | 2022-06-17 | 住友化学株式会社 | 発光素子及び組成物 |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3963498A (en) | 1971-12-27 | 1976-06-15 | Eastman Kodak Company | Silver halide element containing an organic semiconductor |
GB1399259A (en) * | 1971-12-27 | 1975-07-02 | Eastman Kodak Co | Semiconductor materials |
US4687589A (en) | 1985-02-06 | 1987-08-18 | Hermann Block | Electronheological fluids |
JPS6376378A (ja) * | 1986-09-18 | 1988-04-06 | Mitsubishi Electric Corp | 電界効果型トランジスタ |
JPH01125861A (ja) * | 1987-09-30 | 1989-05-18 | Japan Synthetic Rubber Co Ltd | 表示パネル用非線形2端子素子 |
JP2651691B2 (ja) * | 1988-03-03 | 1997-09-10 | バンドー化学株式会社 | 新規な芳香族アミン化合物 |
JPH0210778A (ja) * | 1988-06-29 | 1990-01-16 | Asahi Chem Ind Co Ltd | 光電変換素子 |
JP2813428B2 (ja) | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置 |
US5187310A (en) | 1990-03-14 | 1993-02-16 | Kao Corporation | Organic silicon compound, method of its production, and photoreceptor for electrophotography incorporating it |
US5290963A (en) | 1990-05-12 | 1994-03-01 | Kao Corporation | Organic silicon compound, method of its production, and photoreceptor for electrophotography incorporating it |
JP3150331B2 (ja) * | 1990-09-28 | 2001-03-26 | 株式会社東芝 | 有機薄膜素子 |
JP3224829B2 (ja) | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
JPH05100458A (ja) | 1991-10-08 | 1993-04-23 | Fuji Electric Co Ltd | 電子写真用感光体 |
JPH0821718B2 (ja) * | 1992-07-30 | 1996-03-04 | 日本電気株式会社 | 電界効果型トランジスタおよびその製造方法 |
JP2725591B2 (ja) * | 1994-03-10 | 1998-03-11 | 日本電気株式会社 | 電界効果型トランジスタ |
US5531872A (en) | 1994-08-11 | 1996-07-02 | Xerox Corporation | Processes for preparing photoconductive members by electrophoresis |
US5783519A (en) | 1994-08-22 | 1998-07-21 | Minnesota Mining And Manufacturing Company | Thermal transfer systems having vanadium oxide antistatic layers |
JP2968179B2 (ja) * | 1994-09-13 | 1999-10-25 | 鐘紡株式会社 | 有機半導体 |
JP2865029B2 (ja) * | 1994-10-24 | 1999-03-08 | 富士ゼロックス株式会社 | 電荷輸送性ポリエステルを用いた有機電子デバイス |
US5482811A (en) | 1994-10-31 | 1996-01-09 | Xerox Corporation | Method of making hydroxygallium phthalocyanine type V photoconductive imaging members |
US5759725A (en) * | 1994-12-01 | 1998-06-02 | Kabushiki Kaisha Toshiba | Photoconductors and electrophotographic photoreceptors containing amorphous fullerenes |
TW293172B (ja) * | 1994-12-09 | 1996-12-11 | At & T Corp | |
JP2611751B2 (ja) * | 1995-04-07 | 1997-05-21 | 日本電気株式会社 | 電界効果型トランジスタ |
US5516617A (en) | 1995-07-14 | 1996-05-14 | Xerox Corporation | Photoreceptor material reclaim method |
EP0848288A1 (en) * | 1996-12-16 | 1998-06-17 | Lucent Technologies Inc. | Resist materials |
US6107117A (en) | 1996-12-20 | 2000-08-22 | Lucent Technologies Inc. | Method of making an organic thin film transistor |
JP3045224B2 (ja) * | 1997-01-06 | 2000-05-29 | バンドー化学株式会社 | 有機半導体並びにこれを用いる光電変換素子及びエレクトロクロミック表示素子 |
US5876887A (en) | 1997-02-26 | 1999-03-02 | Xerox Corporation | Charge generation layers comprising pigment mixtures |
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
US5946551A (en) | 1997-03-25 | 1999-08-31 | Dimitrakopoulos; Christos Dimitrios | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric |
US5853906A (en) * | 1997-10-14 | 1998-12-29 | Xerox Corporation | Conductive polymer compositions and processes thereof |
US6566153B1 (en) | 1998-10-14 | 2003-05-20 | The Regents Of The University Of California | Process for fabricating organic semiconductor devices using ink-jet printing technology and device and system employing same |
DE69924155T2 (de) * | 1999-02-04 | 2006-04-13 | Dow Global Technologies, Inc., Midland | Fluoren-copolymere und daraus hergestellte vorrichtungen |
JP3850005B2 (ja) * | 1999-03-03 | 2006-11-29 | パイオニア株式会社 | スイッチング素子及び有機エレクトロルミネッセンス素子表示装置 |
US6252245B1 (en) | 1999-03-29 | 2001-06-26 | Howard Edan Katz | Device comprising n-channel semiconductor material |
JP4262834B2 (ja) | 1999-06-14 | 2009-05-13 | 大日本印刷株式会社 | バインダー添加型電荷輸送液晶材料 |
US6180309B1 (en) | 1999-11-26 | 2001-01-30 | Xerox Corporation | Organic photoreceptor with improved adhesion between coated layers |
US6165660A (en) | 1999-11-29 | 2000-12-26 | Xerox Corporation | Organic photoreceptor with improved adhesion between coated layers |
US6507026B2 (en) * | 2000-01-12 | 2003-01-14 | Kabushiki Kaisha Toshiba | Planar X-ray detector |
TW541853B (en) * | 2000-11-10 | 2003-07-11 | Sumitomo Chemical Co | Polymeric fluorescent substance and polymer light-emitting device using the same |
US6319645B1 (en) | 2001-02-26 | 2001-11-20 | Xerox Corporation | Imaging members |
US6639281B2 (en) | 2001-04-10 | 2003-10-28 | Sarnoff Corporation | Method and apparatus for providing a high-performance active matrix pixel using organic thin-film transistors |
US20030227014A1 (en) | 2002-06-11 | 2003-12-11 | Xerox Corporation. | Process for forming semiconductor layer of micro-and nano-electronic devices |
-
2000
- 2000-11-28 GB GBGB0028867.0A patent/GB0028867D0/en not_active Ceased
-
2001
- 2001-11-21 AT AT01999012T patent/ATE350769T1/de not_active IP Right Cessation
- 2001-11-21 AU AU2081802A patent/AU2081802A/xx active Pending
- 2001-11-21 AU AU2002220818A patent/AU2002220818B2/en not_active Ceased
- 2001-11-21 JP JP2002547243A patent/JP4429603B2/ja not_active Expired - Lifetime
- 2001-11-21 KR KR1020037006957A patent/KR100824026B1/ko active IP Right Grant
- 2001-11-21 CN CNB018195636A patent/CN100416882C/zh not_active Expired - Lifetime
- 2001-11-21 CA CA2427222A patent/CA2427222C/en not_active Expired - Lifetime
- 2001-11-21 US US10/416,005 patent/US7095044B2/en not_active Expired - Lifetime
- 2001-11-21 WO PCT/GB2001/005145 patent/WO2002045184A1/en active IP Right Grant
- 2001-11-21 EP EP01999012A patent/EP1340270B1/en not_active Expired - Lifetime
- 2001-11-21 DE DE60125819T patent/DE60125819T2/de not_active Expired - Lifetime
-
2009
- 2009-07-24 JP JP2009172778A patent/JP2010028123A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1340270A1 (en) | 2003-09-03 |
KR100824026B1 (ko) | 2008-04-21 |
DE60125819T2 (de) | 2007-10-11 |
US20040038459A1 (en) | 2004-02-26 |
ATE350769T1 (de) | 2007-01-15 |
DE60125819D1 (de) | 2007-02-15 |
AU2002220818B2 (en) | 2006-09-28 |
JP2010028123A (ja) | 2010-02-04 |
EP1340270B1 (en) | 2007-01-03 |
WO2002045184A1 (en) | 2002-06-06 |
JP2004525501A (ja) | 2004-08-19 |
AU2081802A (en) | 2002-06-11 |
CN1478309A (zh) | 2004-02-25 |
CN100416882C (zh) | 2008-09-03 |
CA2427222C (en) | 2014-08-12 |
GB0028867D0 (en) | 2001-01-10 |
CA2427222A1 (en) | 2002-06-06 |
KR20030055318A (ko) | 2003-07-02 |
US7095044B2 (en) | 2006-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4429603B2 (ja) | 電界効果トランジスタ及び電界効果トランジスタの生産方法 | |
AU2002220818A1 (en) | Field effect transistors and materials and methods for their manufacture | |
EP2011157B1 (en) | Electronic devices containing acene-thiophene copolymers with silylethynyl groups | |
US7029945B2 (en) | Organic field effect transistor with an organic dielectric | |
KR101943110B1 (ko) | 유기 전자 소자의 제조를 위한 제형 및 방법 | |
DK2715818T3 (en) | Organic semiconductor compositions | |
JP4739021B2 (ja) | 有機半導体材料におけるおよびこれに関連する改善 | |
US10069071B2 (en) | Polycyclic aromatic hydrocarbon copolymers | |
van Breemen et al. | High‐Performance Solution‐Processable Poly (p‐phenylene vinylene) s for Air‐Stable Organic Field‐Effect Transistors | |
JP2008545631A (ja) | オリゴマーポリアセンおよび半導体調製物 | |
WO2014031750A1 (en) | Acenaphthylene imide-derived semiconductors | |
TWI644964B (zh) | 有機半傳導性調配物 | |
KR102365446B1 (ko) | 메톡시아릴 표면 개질제 및 상기 메톡시아릴 표면 개질제를 포함하는 유기 전자 소자 | |
JP5031584B2 (ja) | 有機薄膜トランジスタ | |
KR20160149190A (ko) | 시클릭 아민 표면 개질제 및 상기 시클릭 아민 표면 개질제를 포함하는 유기 전자 소자 | |
Ngo | Veres et a1. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20041029 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20051011 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080527 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20080826 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20080902 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081127 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20090326 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090724 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20090909 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091016 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091019 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20091117 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20091216 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121225 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 4429603 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121225 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131225 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |