JP4384454B2 - イメージ素子 - Google Patents
イメージ素子 Download PDFInfo
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- JP4384454B2 JP4384454B2 JP2003292963A JP2003292963A JP4384454B2 JP 4384454 B2 JP4384454 B2 JP 4384454B2 JP 2003292963 A JP2003292963 A JP 2003292963A JP 2003292963 A JP2003292963 A JP 2003292963A JP 4384454 B2 JP4384454 B2 JP 4384454B2
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- Prior art keywords
- insulating film
- film
- interlayer insulating
- copper
- pattern
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- 239000010949 copper Substances 0.000 claims description 308
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 307
- 229910052802 copper Inorganic materials 0.000 claims description 307
- 239000011229 interlayer Substances 0.000 claims description 265
- 230000004888 barrier function Effects 0.000 claims description 167
- 238000009792 diffusion process Methods 0.000 claims description 167
- 229910052751 metal Inorganic materials 0.000 claims description 151
- 239000002184 metal Substances 0.000 claims description 151
- 230000002265 prevention Effects 0.000 claims description 96
- 239000010410 layer Substances 0.000 claims description 86
- 230000001681 protective effect Effects 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 15
- 230000031700 light absorption Effects 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 127
- 238000004519 manufacturing process Methods 0.000 description 93
- 238000005530 etching Methods 0.000 description 40
- 125000006850 spacer group Chemical group 0.000 description 22
- 238000000206 photolithography Methods 0.000 description 19
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 17
- 229910010271 silicon carbide Inorganic materials 0.000 description 17
- 239000000126 substance Substances 0.000 description 14
- 239000007769 metal material Substances 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000005498 polishing Methods 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 239000012780 transparent material Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000011165 process development Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- -1 if necessary Inorganic materials 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
図2乃至図17は本実施形態によるイメージ素子を製造するためのイメージ素子の製造方法を示す断面図である。
102 フィールド酸化膜
105 層間絶縁膜構造物
110 フォトダイオード
112 ゲート絶縁膜
114 ゲート電極
116 スペーサ
120 トランジスター
122 ソース/ドレーン領域
130 下部絶縁膜
140 下部コンタクト
150 第1銅拡散防止膜
160 第1層間絶縁膜
170 下部銅配線ライン
180 第2銅拡散防止膜
190 第2層間絶縁膜
200 第1配線
210 第3銅拡散防止膜
220 第3層間絶縁膜
230 第2配線
232 第3ダミーパターン
240 第4銅拡散防止膜
250 第4層間絶縁膜
260 第3配線
272 フォトダイオード光開口部
401 第1バリヤー金属膜パターン
Claims (11)
- 光素子が形成された基板と、
前記基板上に形成され、内部に少なくとも一つの銅コンタクトまたは銅配線ラインと、前記銅コンタクトまたは銅配線の銅拡散を防止するための銅拡散防止膜とを有し、前記光素子上に光を収集するために、前記光素子の最上部表面から前記銅拡散防止膜を通過するように形成されている光素子開口部を有する層間絶縁膜構造物と、
前記開口部を埋め、上部に凹部を有する透明絶縁膜と、
前記絶縁膜上に形成され、前記凹部に対応する凹部を上面に有するカラーフィルタと、
前記カラーフィルタ上に形成され、前記カラーフィルタの凹部を埋める凸形状を有するマイクロレンズとを含むことを特徴とするイメージ素子。 - 前記基板と前記層間絶縁膜構造物間には前記基板に形成された半導体素子を覆うように形成された下部絶縁膜をさらに含むことを特徴とする請求項1に記載のイメージ素子。
- 層間絶縁膜構造物は、
前記下部絶縁膜上に形成され、前記光素子開口部部位に該当する部位がオープンされた第1銅拡散防止膜と、
前記第1銅拡散防止膜上に形成され、前記光素子開口部部位に該当する部位がオープンされた第1層間絶縁膜を含むことを特徴とする請求項2に記載のイメージ素子。 - 前記層間絶縁膜構造物は、
前記第1層間絶縁膜上に形成され、前記光素子開口部部位に該当する部位がオープンされた第2乃至n次、(nは2以上の自然数)銅拡散防止膜と、
前記第2乃至n次銅拡散防止膜上に各々形成され、前記光素子開口部に該当する部位がオープンされた第2乃至n次層間絶縁膜をさらに含むことを特徴とする請求項3に記載のイメージ素子。 - 前記n次層間絶縁膜は、
下部の導電性配線層と接続するビアコンタクトと、
前記ビアコンタクト上に形成され、信号を伝達するための導電性ラインを含むことを特徴とする請求項4に記載のイメージ素子。 - 前記ビアコンタクト及び導電性ラインと、前記n次層間絶縁膜との間に前記n次層間絶縁膜に前記ビアコンタクト及び導電性ラインの構成物質が拡散することを防止するためのバリヤー金属膜をさらに含むことを特徴とする請求項5に記載のイメージ素子。
- 前記下部絶縁膜は基板に形成された半導体素子と接続する下部コンタクトを含み、
前記第1層間絶縁膜には、前記下部コンタクトに接触して形成された導電性ラインが形成されていることを特徴とする請求項3に記載のイメージ素子。 - 前記光素子と前記光素子開口部間に前記光素子の光吸収率を向上させるための反射防止膜または反射防止パターンをさらに含むことを特徴とする請求項1に記載のイメージ素子。
- 前記光素子開口部の側壁上に形成された保護膜をさらに含むことを特徴とする請求項1に記載のイメージ素子。
- 前記光素子開口部の側壁上に形成されたバリヤー金属膜をさらに含むことを特徴とする請求項1に記載のイメージ素子。
- 光素子が形成された基板と、
前記光素子を覆って、前記光素子を駆動するための半導体素子と電気的に連結された下部コンタクトを備える下部絶縁膜と、
前記下部絶縁膜上に形成され、内部に前記下部コンタクトと接続する少なくとも一つの銅コンタクトまたは銅配線ラインと、前記銅コンタクトまたは銅配線の銅拡散を防止するための銅拡散防止膜を含み、前記光素子の上部にその最上部表面から前記銅拡散防止膜を通過するように光を収集するための光素子開口部が形成されている層間絶縁膜構造物と、
前記光素子開口部を埋め、スピンオン絶縁物からなる透明絶縁膜と、
前記透明な絶縁膜上に形成されているカラーフィルタと、
前記カラーフィルタ上に形成されているマイクロレンズを含むことを特徴とするイメージ素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20030002932 | 2003-01-16 | ||
KR20030018651 | 2003-03-25 | ||
KR10-2003-0034305A KR100524200B1 (ko) | 2003-01-16 | 2003-05-29 | 이미지 소자 및 그 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004221527A JP2004221527A (ja) | 2004-08-05 |
JP4384454B2 true JP4384454B2 (ja) | 2009-12-16 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2003292963A Expired - Fee Related JP4384454B2 (ja) | 2003-01-16 | 2003-08-13 | イメージ素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6861686B2 (ja) |
EP (1) | EP1439582B1 (ja) |
JP (1) | JP4384454B2 (ja) |
CN (1) | CN100416842C (ja) |
TW (1) | TWI256131B (ja) |
Families Citing this family (137)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001298175A (ja) * | 2000-04-12 | 2001-10-26 | Toshiba Corp | 撮像システム |
KR100477784B1 (ko) * | 2000-08-31 | 2005-03-22 | 매그나칩 반도체 유한회사 | 트렌치 내부의 공기로 이루어지는 집광층을 구비하는이미지 센서 및 그 제조 방법 |
JP4005873B2 (ja) * | 2002-08-15 | 2007-11-14 | 株式会社東芝 | 半導体装置 |
KR100937647B1 (ko) * | 2002-12-30 | 2010-01-19 | 동부일렉트로닉스 주식회사 | 프로그램이 가능한 커패시터 및 이의 제조 방법 |
US7215361B2 (en) * | 2003-09-17 | 2007-05-08 | Micron Technology, Inc. | Method for automated testing of the modulation transfer function in image sensors |
KR100499174B1 (ko) * | 2003-06-17 | 2005-07-01 | 삼성전자주식회사 | 이미지 소자 |
JP2005064226A (ja) * | 2003-08-12 | 2005-03-10 | Renesas Technology Corp | 配線構造 |
US7232697B2 (en) * | 2003-12-23 | 2007-06-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having enhanced photo sensitivity and method for manufacture thereof |
KR20050070794A (ko) * | 2003-12-31 | 2005-07-07 | 동부아남반도체 주식회사 | 반도체 소자의 금속배선 형성방법 |
KR100560941B1 (ko) * | 2004-01-09 | 2006-03-14 | 매그나칩 반도체 유한회사 | 고전압 소자의 금속 배선 형성 방법 |
WO2005076360A1 (en) * | 2004-02-04 | 2005-08-18 | Koninklijke Philips Electronics N.V. | Opto-electronic semiconductor device, method of manufacturing same, and camera provided with such a device |
KR100541708B1 (ko) | 2004-02-05 | 2006-01-10 | 매그나칩 반도체 유한회사 | 이미지 센서 및 이의 제조 방법 |
US7115974B2 (en) * | 2004-04-27 | 2006-10-03 | Taiwan Semiconductor Manfacturing Company, Ltd. | Silicon oxycarbide and silicon carbonitride based materials for MOS devices |
KR100745985B1 (ko) * | 2004-06-28 | 2007-08-06 | 삼성전자주식회사 | 이미지 센서 |
JP4647404B2 (ja) * | 2004-07-07 | 2011-03-09 | 三星電子株式会社 | 転送ゲート電極に重畳しながら自己整列されたフォトダイオードを有するイメージセンサの製造方法 |
KR100653691B1 (ko) * | 2004-07-16 | 2006-12-04 | 삼성전자주식회사 | 적어도 메인 화소 어레이 영역의 전면을 노출시키는패시베이션막을 갖는 이미지 센서들 및 그 제조방법들 |
JP4581523B2 (ja) * | 2004-07-16 | 2010-11-17 | ソニー株式会社 | 固体撮像素子の製造方法 |
US8552559B2 (en) * | 2004-07-29 | 2013-10-08 | Megica Corporation | Very thick metal interconnection scheme in IC chips |
KR100642764B1 (ko) * | 2004-09-08 | 2006-11-10 | 삼성전자주식회사 | 이미지 소자 및 그 제조 방법 |
KR100652379B1 (ko) * | 2004-09-11 | 2006-12-01 | 삼성전자주식회사 | Cmos 이미지 센서 및 그 제조 방법 |
US20060057765A1 (en) * | 2004-09-13 | 2006-03-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor including multiple lenses and method of manufacture thereof |
US7071019B2 (en) * | 2004-09-16 | 2006-07-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method to improve image sensor sensitivity |
JP2006108497A (ja) * | 2004-10-07 | 2006-04-20 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
KR100678269B1 (ko) * | 2004-10-18 | 2007-02-02 | 삼성전자주식회사 | 씨모스 방식의 이미지 센서와 그 제작 방법 |
US7193289B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Damascene copper wiring image sensor |
US7450161B1 (en) | 2004-12-02 | 2008-11-11 | Magnachip Semiconductor Ltd. | System and method to enhance the uniformity of intensity distribution on digital imaging sensors |
US7564629B1 (en) * | 2004-12-02 | 2009-07-21 | Crosstek Capital, LLC | Microlens alignment procedures in CMOS image sensor design |
US7763918B1 (en) | 2004-12-02 | 2010-07-27 | Chen Feng | Image pixel design to enhance the uniformity of intensity distribution on digital image sensors |
US7592645B2 (en) | 2004-12-08 | 2009-09-22 | Canon Kabushiki Kaisha | Photoelectric conversion device and method for producing photoelectric conversion device |
US7342268B2 (en) * | 2004-12-23 | 2008-03-11 | International Business Machines Corporation | CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom |
KR100666371B1 (ko) * | 2004-12-23 | 2007-01-09 | 삼성전자주식회사 | 이미지 소자의 제조 방법 |
KR100672661B1 (ko) * | 2004-12-28 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서의 제조방법 |
KR100649006B1 (ko) * | 2004-12-30 | 2006-11-27 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서의 제조방법 |
KR100649013B1 (ko) | 2004-12-30 | 2006-11-27 | 동부일렉트로닉스 주식회사 | 베리어를 이용한 집광장치 및 그 제조방법 |
KR100628233B1 (ko) * | 2004-12-30 | 2006-09-26 | 동부일렉트로닉스 주식회사 | 자동 배열된 마이크로렌즈를 갖는 이미지 센서 및 그 제조방법 |
JP4938238B2 (ja) * | 2005-01-07 | 2012-05-23 | ソニー株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
JP2006202852A (ja) * | 2005-01-18 | 2006-08-03 | Toshiba Corp | 半導体装置 |
KR100719341B1 (ko) * | 2005-01-25 | 2007-05-17 | 삼성전자주식회사 | 이미지 센서 및 그 제조방법 |
JP4686201B2 (ja) * | 2005-01-27 | 2011-05-25 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
JP4618786B2 (ja) * | 2005-01-28 | 2011-01-26 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2006222270A (ja) * | 2005-02-10 | 2006-08-24 | Sony Corp | 固体撮像素子及び固体撮像素子の製造方法 |
KR100807214B1 (ko) * | 2005-02-14 | 2008-03-03 | 삼성전자주식회사 | 향상된 감도를 갖는 이미지 센서 및 그 제조 방법 |
JP4621048B2 (ja) * | 2005-03-25 | 2011-01-26 | 富士通セミコンダクター株式会社 | 固体撮像素子 |
KR100687102B1 (ko) * | 2005-03-30 | 2007-02-26 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법. |
US7432491B2 (en) * | 2005-05-06 | 2008-10-07 | Micron Technology, Inc. | Pixel with spatially varying sensor positions |
US7214920B2 (en) | 2005-05-06 | 2007-05-08 | Micron Technology, Inc. | Pixel with spatially varying metal route positions |
US20060255381A1 (en) * | 2005-05-10 | 2006-11-16 | Micron Technology, Inc. | Pixel with gate contacts over active region and method of forming same |
US7355222B2 (en) * | 2005-05-19 | 2008-04-08 | Micron Technology, Inc. | Imaging device having a pixel cell with a transparent conductive interconnect line and the method of making the pixel cell |
US20070010042A1 (en) * | 2005-07-05 | 2007-01-11 | Sheng-Chin Li | Method of manufacturing a cmos image sensor |
US7683407B2 (en) * | 2005-08-01 | 2010-03-23 | Aptina Imaging Corporation | Structure and method for building a light tunnel for use with imaging devices |
US7511257B2 (en) * | 2005-08-24 | 2009-03-31 | Aptina Imaging Corporation | Method and apparatus providing and optical guide in image sensor devices |
US7755122B2 (en) * | 2005-08-29 | 2010-07-13 | United Microelectronics Corp. | Complementary metal oxide semiconductor image sensor |
US7652699B2 (en) * | 2005-08-30 | 2010-01-26 | Motorola, Inc. | Color image sensor with tunable color filter |
US7598581B2 (en) | 2005-09-12 | 2009-10-06 | Crosstek Capital, LLC | Image sensor with decreased optical interference between adjacent pixels |
KR100649034B1 (ko) * | 2005-09-21 | 2006-11-27 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
US7633106B2 (en) * | 2005-11-09 | 2009-12-15 | International Business Machines Corporation | Light shield for CMOS imager |
KR100720457B1 (ko) * | 2005-11-10 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 이의 제조 방법 |
CN100447984C (zh) * | 2005-12-01 | 2008-12-31 | 联华电子股份有限公司 | 图像传感器元件及其制造方法 |
JP4972924B2 (ja) * | 2005-12-19 | 2012-07-11 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びにカメラ |
US7884434B2 (en) * | 2005-12-19 | 2011-02-08 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus, producing method therefor, image pickup module and image pickup system |
KR100660334B1 (ko) * | 2005-12-28 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조방법 |
KR100716911B1 (ko) * | 2005-12-28 | 2007-05-10 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
KR100731128B1 (ko) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR20070096115A (ko) * | 2005-12-29 | 2007-10-02 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 |
KR100790237B1 (ko) * | 2005-12-29 | 2008-01-02 | 매그나칩 반도체 유한회사 | 이미지 센서의 금속배선 형성방법 |
KR100731130B1 (ko) * | 2005-12-29 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100755666B1 (ko) * | 2006-01-03 | 2007-09-05 | 삼성전자주식회사 | 이미지 센서 및 이미지 센서의 제조 방법 |
US20070187787A1 (en) * | 2006-02-16 | 2007-08-16 | Ackerson Kristin M | Pixel sensor structure including light pipe and method for fabrication thereof |
JP2007227445A (ja) * | 2006-02-21 | 2007-09-06 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2007242697A (ja) * | 2006-03-06 | 2007-09-20 | Canon Inc | 撮像装置および撮像システム |
US20080054386A1 (en) * | 2006-08-31 | 2008-03-06 | Micron Technology, Inc. | Recessed color filter array and method of forming the same |
JP2008091643A (ja) * | 2006-10-02 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
US7544982B2 (en) * | 2006-10-03 | 2009-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor device suitable for use with logic-embedded CIS chips and methods for making the same |
CN101197320B (zh) * | 2006-12-05 | 2010-05-12 | 中芯国际集成电路制造(上海)有限公司 | Cmos图像传感器和cmos图像传感器的制造方法 |
JP5092379B2 (ja) * | 2006-12-07 | 2012-12-05 | ソニー株式会社 | 固体撮像装置及びその製造方法並びに撮像装置 |
JP2008166677A (ja) * | 2006-12-08 | 2008-07-17 | Sony Corp | 固体撮像装置とその製造方法並びにカメラ |
US7973271B2 (en) * | 2006-12-08 | 2011-07-05 | Sony Corporation | Solid-state image pickup device, method for manufacturing solid-state image pickup device, and camera |
KR100818525B1 (ko) * | 2006-12-20 | 2008-03-31 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그의 제조방법 |
FR2910703B1 (fr) * | 2006-12-22 | 2009-03-20 | St Microelectronics Sa | Dispositif imageur dote d'un dernier niveau d'interconnexion a base de cuivre et d'aluminium |
JP4110192B1 (ja) | 2007-02-23 | 2008-07-02 | キヤノン株式会社 | 光電変換装置及び光電変換装置を用いた撮像システム |
JP5159120B2 (ja) * | 2007-02-23 | 2013-03-06 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
JP4961232B2 (ja) * | 2007-03-19 | 2012-06-27 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
US8040266B2 (en) * | 2007-04-17 | 2011-10-18 | Cypress Semiconductor Corporation | Programmable sigma-delta analog-to-digital converter |
JP2008283070A (ja) * | 2007-05-11 | 2008-11-20 | Canon Inc | 撮像素子 |
KR100904589B1 (ko) * | 2007-06-25 | 2009-06-25 | 주식회사 동부하이텍 | 이미지 센서의 제조방법 |
US7829369B2 (en) * | 2007-07-12 | 2010-11-09 | Aptina Imaging Corporation | Methods of forming openings |
JP5095287B2 (ja) * | 2007-07-18 | 2012-12-12 | パナソニック株式会社 | 固体撮像素子及びその製造方法 |
KR100881200B1 (ko) * | 2007-07-30 | 2009-02-05 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
KR100882986B1 (ko) * | 2007-09-07 | 2009-02-12 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
JP5550558B2 (ja) | 2007-11-01 | 2014-07-16 | インシアヴァ (ピーテーワイ) リミテッド | 光誘導機構を有するオプトエレクトロニック・デバイスおよびその機構を形成する方法 |
US7816641B2 (en) * | 2007-12-28 | 2010-10-19 | Candela Microsystems (S) Pte. Ltd. | Light guide array for an image sensor |
US7781798B2 (en) * | 2008-01-17 | 2010-08-24 | Sony Corporation | Solid-state image pickup device and fabrication method therefor |
JP4483950B2 (ja) | 2008-01-18 | 2010-06-16 | ソニー株式会社 | レンズ鏡筒および撮像装置 |
JP5369441B2 (ja) * | 2008-01-24 | 2013-12-18 | ソニー株式会社 | 固体撮像素子 |
JP4725614B2 (ja) | 2008-01-24 | 2011-07-13 | ソニー株式会社 | 固体撮像装置 |
JP2009212280A (ja) * | 2008-03-04 | 2009-09-17 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
CN102938407B (zh) * | 2008-03-14 | 2015-06-17 | 郑苍隆 | 用于图像传感器的光导阵列 |
JP4697258B2 (ja) * | 2008-05-09 | 2011-06-08 | ソニー株式会社 | 固体撮像装置と電子機器 |
JP5446484B2 (ja) * | 2008-07-10 | 2014-03-19 | ソニー株式会社 | 固体撮像装置とその製造方法および撮像装置 |
KR101030299B1 (ko) * | 2008-08-08 | 2011-04-20 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
JP5441382B2 (ja) * | 2008-09-30 | 2014-03-12 | キヤノン株式会社 | 光電変換装置及び光電変換装置の製造方法 |
KR20100045094A (ko) * | 2008-10-23 | 2010-05-03 | 주식회사 동부하이텍 | 이미지 센서의 제조 방법 |
KR20100057302A (ko) * | 2008-11-21 | 2010-05-31 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
JP2010177391A (ja) | 2009-01-29 | 2010-08-12 | Sony Corp | 固体撮像装置、電子機器、固体撮像装置の製造方法 |
JP2010182765A (ja) * | 2009-02-04 | 2010-08-19 | Sony Corp | 固体撮像装置および電子機器 |
JP5212246B2 (ja) * | 2009-04-24 | 2013-06-19 | ソニー株式会社 | 固体撮像素子及び固体撮像素子の製造方法 |
US20100289065A1 (en) | 2009-05-12 | 2010-11-18 | Pixart Imaging Incorporation | Mems integrated chip with cross-area interconnection |
JP2010283145A (ja) * | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
US20100320552A1 (en) * | 2009-06-19 | 2010-12-23 | Pixart Imaging Inc. | CMOS Image Sensor |
TWI418024B (zh) * | 2009-07-06 | 2013-12-01 | Pixart Imaging Inc | 影像感測元件及其製作方法 |
KR20110077451A (ko) | 2009-12-30 | 2011-07-07 | 삼성전자주식회사 | 이미지 센서, 그 제조 방법, 및 상기 이미지 센서를 포함하는 장치 |
CN102237295B (zh) * | 2010-04-28 | 2014-04-09 | 中国科学院微电子研究所 | 半导体结构制造方法 |
KR101692953B1 (ko) * | 2010-07-09 | 2017-01-05 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
DE102010061782B4 (de) * | 2010-11-23 | 2020-08-06 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mikromechanischen Bauelements |
JP5943577B2 (ja) | 2011-10-07 | 2016-07-05 | キヤノン株式会社 | 光電変換装置および撮像システム |
US8836139B2 (en) * | 2012-10-18 | 2014-09-16 | Globalfoundries Singapore Pte. Ltd. | CD control |
CN102891156B (zh) * | 2012-10-25 | 2017-12-15 | 上海集成电路研发中心有限公司 | Cmos影像传感器的深沟槽图形化方法 |
CN102891159B (zh) * | 2012-10-25 | 2018-10-16 | 上海集成电路研发中心有限公司 | Cmos影像传感器的像元结构及其制造方法 |
JP6087107B2 (ja) * | 2012-10-29 | 2017-03-01 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9153483B2 (en) * | 2013-10-30 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of semiconductor integrated circuit fabrication |
KR101622090B1 (ko) * | 2013-11-08 | 2016-05-18 | 엘지전자 주식회사 | 태양 전지 |
CN103594478A (zh) * | 2013-11-13 | 2014-02-19 | 上海华力微电子有限公司 | 光电二极管光通路的制备方法 |
KR20150108531A (ko) * | 2014-03-18 | 2015-09-30 | 주식회사 동부하이텍 | 씨모스 이미지 센서 및 그 제조 방법 |
US9818779B2 (en) | 2014-03-27 | 2017-11-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | CMOS image sensor structure |
US9382111B2 (en) * | 2014-06-26 | 2016-07-05 | Infineon Technologies Dresden Gmbh | Micromechanical system and method for manufacturing a micromechanical system |
US9376314B2 (en) * | 2014-06-26 | 2016-06-28 | Infineon Technologies Dresden Gmbh | Method for manufacturing a micromechanical system |
KR102268707B1 (ko) | 2014-07-28 | 2021-06-28 | 삼성전자주식회사 | 이미지 센서 |
JP6362482B2 (ja) * | 2014-08-28 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR20160088821A (ko) * | 2015-01-16 | 2016-07-26 | 퍼스널 제노믹스 타이완, 아이엔씨. | 광-가이딩 피쳐를 갖는 광학 센서 그 제조 방법 |
CA2999939C (en) * | 2015-09-24 | 2019-09-10 | Hee Solar, L.L.C. | System for testing photosensitive device degradation |
KR102500813B1 (ko) * | 2015-09-24 | 2023-02-17 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
US9812482B2 (en) * | 2015-12-28 | 2017-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Frontside illuminated (FSI) image sensor with a reflector |
TWI599028B (zh) * | 2016-10-14 | 2017-09-11 | 力晶科技股份有限公司 | 影像感測器及其製作方法 |
CN110233132A (zh) * | 2018-03-05 | 2019-09-13 | 中芯国际集成电路制造(北京)有限公司 | 半导体结构及其形成方法 |
TWI707481B (zh) * | 2019-03-08 | 2020-10-11 | 力晶積成電子製造股份有限公司 | 影像感測器及其製造方法 |
CN111463226A (zh) * | 2020-05-11 | 2020-07-28 | 矽力杰半导体技术(杭州)有限公司 | 光电集成器件及其制造方法 |
US11532759B2 (en) * | 2021-01-27 | 2022-12-20 | Taiwan Semiconductor Manufacturing Company Limited | Capping structures for germanium-containing photovoltaic components and methods of forming the same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5739579A (en) * | 1992-06-29 | 1998-04-14 | Intel Corporation | Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections |
JPH09130684A (ja) * | 1995-11-06 | 1997-05-16 | Sony Corp | 撮像装置及び固体撮像素子の実装方法 |
JP3534589B2 (ja) * | 1997-10-30 | 2004-06-07 | シャープ株式会社 | 多層配線装置及びその製造方法 |
JP2000150846A (ja) * | 1998-11-12 | 2000-05-30 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
JP2000299318A (ja) * | 1999-04-15 | 2000-10-24 | Hitachi Ltd | 半導体装置及びその製造方法 |
US6274478B1 (en) * | 1999-07-13 | 2001-08-14 | Motorola, Inc. | Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process |
JP2001094086A (ja) * | 1999-09-22 | 2001-04-06 | Canon Inc | 光電変換装置及びその製造方法 |
KR20010059316A (ko) | 1999-12-30 | 2001-07-06 | 박종섭 | 광감도 개선을 위한 이미지센서 및 그 제조방법 |
JP3827909B2 (ja) * | 2000-03-21 | 2006-09-27 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
JP3647397B2 (ja) * | 2000-07-03 | 2005-05-11 | キヤノン株式会社 | 光電変換装置 |
JP2002064193A (ja) | 2000-08-22 | 2002-02-28 | Sony Corp | 固体撮像装置および製造方法 |
KR100477784B1 (ko) * | 2000-08-31 | 2005-03-22 | 매그나칩 반도체 유한회사 | 트렌치 내부의 공기로 이루어지는 집광층을 구비하는이미지 센서 및 그 제조 방법 |
JP2002110799A (ja) * | 2000-09-27 | 2002-04-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3672085B2 (ja) * | 2000-10-11 | 2005-07-13 | シャープ株式会社 | 固体撮像素子およびその製造方法 |
KR100385227B1 (ko) * | 2001-02-12 | 2003-05-27 | 삼성전자주식회사 | 구리 다층 배선을 가지는 반도체 장치 및 그 형성방법 |
JP2002246579A (ja) * | 2001-02-15 | 2002-08-30 | Seiko Epson Corp | 固体撮像素子及びその製造方法 |
JP4182393B2 (ja) * | 2002-04-10 | 2008-11-19 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
JP4117672B2 (ja) * | 2002-05-01 | 2008-07-16 | ソニー株式会社 | 固体撮像素子及び固体撮像装置、並びにこれらの製造方法 |
-
2003
- 2003-08-05 US US10/633,709 patent/US6861686B2/en not_active Expired - Lifetime
- 2003-08-08 TW TW092121774A patent/TWI256131B/zh not_active IP Right Cessation
- 2003-08-13 JP JP2003292963A patent/JP4384454B2/ja not_active Expired - Fee Related
- 2003-08-25 EP EP03018706.6A patent/EP1439582B1/en not_active Expired - Lifetime
- 2003-10-17 CN CNB2003101024058A patent/CN100416842C/zh not_active Expired - Lifetime
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Publication number | Publication date |
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TWI256131B (en) | 2006-06-01 |
US20040140564A1 (en) | 2004-07-22 |
TW200414524A (en) | 2004-08-01 |
EP1439582A3 (en) | 2006-01-18 |
CN100416842C (zh) | 2008-09-03 |
JP2004221527A (ja) | 2004-08-05 |
CN1518119A (zh) | 2004-08-04 |
EP1439582A2 (en) | 2004-07-21 |
US6861686B2 (en) | 2005-03-01 |
EP1439582B1 (en) | 2013-10-30 |
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