JP2007227445A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2007227445A JP2007227445A JP2006043827A JP2006043827A JP2007227445A JP 2007227445 A JP2007227445 A JP 2007227445A JP 2006043827 A JP2006043827 A JP 2006043827A JP 2006043827 A JP2006043827 A JP 2006043827A JP 2007227445 A JP2007227445 A JP 2007227445A
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- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000010410 layer Substances 0.000 claims abstract description 115
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000011229 interlayer Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 40
- 238000005530 etching Methods 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- 229920005591 polysilicon Polymers 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 229910052814 silicon oxide Inorganic materials 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- -1 SOG Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
【解決手段】SOG等からなる層間絶縁膜とAl層とが積層された配線構造層90の受光部52に対応する位置をエッチバックして開口部120を形成した後、CVD法によりシリコン窒化膜130を開口部120の側壁面及び底面に堆積する。このシリコン窒化膜130により配線構造層90への湿気の進入が阻止される。
【選択図】図2
Description
第1の実施形態は、CDやDVDといった光ディスクの再生装置の光ピックアップ機構に搭載される光検出器である。
本発明の第2の実施形態は、上記第1の実施形態と同様の光検出器であり、以下、第1の実施形態と同様の構成要素には同一の符号を付して説明の簡略化を図る。本光検出器の平面図は図1に示すものを援用することができる。また、図4は、図1に示す直線A−A’を通り半導体基板に垂直な断面での本光検出器の受光部52及び回路部54の構造を示す模式的な断面図である。本光検出器が第1の実施形態の光検出器50と基本的に相違する点は、受光部52に形成される開口部の構造にあり、以下、この点に関して説明する。
Claims (7)
- 共通の半導体基板に受光部と回路部とが隣接配置される半導体装置であって、
前記半導体基板上に積層され、前記回路部を構成する金属配線及び層間絶縁膜を含む配線構造層と、
前記受光部の位置に形成された前記配線構造層の開口部と、
前記開口部の側壁面を被覆する防湿膜と、
を有することを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記開口部は、前記配線構造層の途中までの深さを有し、
前記防湿膜は、前記開口部の前記側壁面及び底面を被覆し、
前記底面を被覆する前記防湿膜は、前記開口部から前記受光部への入射光に対する反射防止膜を兼ねること、
を特徴とする半導体装置。 - 請求項1又は請求項2に記載の半導体装置において、
前記防湿膜はシリコン窒化物からなること、
を特徴とする半導体装置。 - 共通の半導体基板に受光部と回路部とが隣接配置される半導体装置を製造する方法であって、
前記半導体基板上に、少なくとも前記回路部に形成する金属配線と、前記半導体基板上全面に形成する層間絶縁膜とからなる配線構造層を積層する配線構造形成工程と、
前記受光部に対応する領域の前記配線構造層をエッチングして開口部を形成する開口部形成工程と、
前記開口部の側壁面に防湿膜を堆積する防湿膜形成工程と、
を有することを特徴とする半導体装置製造方法。 - 請求項4に記載の半導体装置製造方法において、
前記配線構造形成工程に先立って、前記受光部に対応した前記半導体基板上に、前記開口部形成工程でのエッチングストッパとなる開口底部層を形成する底部層形成工程と、
前記防湿膜形成工程後、前記開口底部層上に堆積した前記防湿膜及び前記開口底部層を順次、エッチング除去する開口底部除去工程と、
を有することを特徴とする半導体装置製造方法。 - 請求項5に記載の半導体装置製造方法において、
前記底部層形成工程に先立って、前記半導体基板上に前記受光部への入射光に対する反射防止膜を形成する反射防止膜形成工程を有し、
前記開口底部除去工程は、前記反射防止膜をエッチングストッパとして前記開口底部層をエッチングすること、
を特徴とする半導体装置製造方法。 - 請求項4から請求項6のいずれか1つに記載の半導体装置製造方法において、
前記防湿膜はシリコン窒化物で形成されること、
を特徴とする半導体装置製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006043827A JP2007227445A (ja) | 2006-02-21 | 2006-02-21 | 半導体装置及びその製造方法 |
CN2007100080241A CN101026173B (zh) | 2006-02-21 | 2007-02-05 | 半导体装置及其制造方法 |
TW096105878A TW200733402A (en) | 2006-02-21 | 2007-02-16 | Semiconductor device and method for manufacturing the same |
US11/707,076 US7816748B2 (en) | 2006-02-21 | 2007-02-16 | Semiconductor device and method for manufacturing same |
KR1020070016991A KR100892013B1 (ko) | 2006-02-21 | 2007-02-20 | 반도체 장치 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006043827A JP2007227445A (ja) | 2006-02-21 | 2006-02-21 | 半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007227445A true JP2007227445A (ja) | 2007-09-06 |
Family
ID=38427331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006043827A Pending JP2007227445A (ja) | 2006-02-21 | 2006-02-21 | 半導体装置及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7816748B2 (ja) |
JP (1) | JP2007227445A (ja) |
KR (1) | KR100892013B1 (ja) |
CN (1) | CN101026173B (ja) |
TW (1) | TW200733402A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8765517B2 (en) | 2010-07-09 | 2014-07-01 | Samsung Electronics Co., Ltd. | Image sensors including hydrophobic interfaces and methods of fabricating the same |
JP2020067625A (ja) * | 2018-10-26 | 2020-04-30 | 国立大学法人九州工業大学 | 光学装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5049036B2 (ja) * | 2007-03-28 | 2012-10-17 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP4852016B2 (ja) * | 2007-10-29 | 2012-01-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR101324087B1 (ko) | 2012-05-16 | 2013-10-31 | 주식회사 동부하이텍 | 이미지 센서와 그 제조 방법 |
US10854658B2 (en) * | 2018-07-16 | 2020-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Image sensor with sidewall protection and method of making same |
Citations (8)
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JP2001320079A (ja) * | 2000-05-11 | 2001-11-16 | Texas Instr Japan Ltd | フォトダイオードの製造方法 |
JP2003197886A (ja) * | 2001-12-28 | 2003-07-11 | Sony Corp | 固体撮像素子およびその製造方法 |
JP2003264310A (ja) * | 2002-03-11 | 2003-09-19 | Sharp Corp | 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置 |
JP2003264309A (ja) * | 2002-03-08 | 2003-09-19 | Toshiba Corp | 光半導体装置および光半導体装置の製造方法 |
JP2004221527A (ja) * | 2003-01-16 | 2004-08-05 | Samsung Electronics Co Ltd | イメージ素子及びその製造方法 |
JP2005109049A (ja) * | 2003-09-29 | 2005-04-21 | Sanyo Electric Co Ltd | 光半導体集積回路装置の製造方法 |
JP2005109047A (ja) * | 2003-09-29 | 2005-04-21 | Sanyo Electric Co Ltd | 光半導体集積回路装置及びその製造方法 |
JP2006013520A (ja) * | 2004-06-28 | 2006-01-12 | Samsung Electronics Co Ltd | 光吸収膜を有するイメージセンサ集積回路素子及びその製造方法 |
Family Cites Families (3)
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CA2119176C (en) * | 1993-03-19 | 1998-06-23 | Masahiro Kobayashi | Semiconductor light detecting device |
KR100524200B1 (ko) | 2003-01-16 | 2005-10-26 | 삼성전자주식회사 | 이미지 소자 및 그 제조 방법 |
US7485486B2 (en) * | 2005-03-18 | 2009-02-03 | Intersil Americas Inc. | Photodiode for multiple wavelength operation |
-
2006
- 2006-02-21 JP JP2006043827A patent/JP2007227445A/ja active Pending
-
2007
- 2007-02-05 CN CN2007100080241A patent/CN101026173B/zh not_active Expired - Fee Related
- 2007-02-16 US US11/707,076 patent/US7816748B2/en active Active
- 2007-02-16 TW TW096105878A patent/TW200733402A/zh not_active IP Right Cessation
- 2007-02-20 KR KR1020070016991A patent/KR100892013B1/ko not_active IP Right Cessation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001320079A (ja) * | 2000-05-11 | 2001-11-16 | Texas Instr Japan Ltd | フォトダイオードの製造方法 |
JP2003197886A (ja) * | 2001-12-28 | 2003-07-11 | Sony Corp | 固体撮像素子およびその製造方法 |
JP2003264309A (ja) * | 2002-03-08 | 2003-09-19 | Toshiba Corp | 光半導体装置および光半導体装置の製造方法 |
JP2003264310A (ja) * | 2002-03-11 | 2003-09-19 | Sharp Corp | 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置 |
JP2004221527A (ja) * | 2003-01-16 | 2004-08-05 | Samsung Electronics Co Ltd | イメージ素子及びその製造方法 |
JP2005109049A (ja) * | 2003-09-29 | 2005-04-21 | Sanyo Electric Co Ltd | 光半導体集積回路装置の製造方法 |
JP2005109047A (ja) * | 2003-09-29 | 2005-04-21 | Sanyo Electric Co Ltd | 光半導体集積回路装置及びその製造方法 |
JP2006013520A (ja) * | 2004-06-28 | 2006-01-12 | Samsung Electronics Co Ltd | 光吸収膜を有するイメージセンサ集積回路素子及びその製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8765517B2 (en) | 2010-07-09 | 2014-07-01 | Samsung Electronics Co., Ltd. | Image sensors including hydrophobic interfaces and methods of fabricating the same |
US9117716B2 (en) | 2010-07-09 | 2015-08-25 | Samsung Electronics Co., Ltd. | Image sensors including hydrophobic interfaces and methods of fabricating the same |
JP2020067625A (ja) * | 2018-10-26 | 2020-04-30 | 国立大学法人九州工業大学 | 光学装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101026173B (zh) | 2011-06-15 |
US20070194396A1 (en) | 2007-08-23 |
US7816748B2 (en) | 2010-10-19 |
KR20070083417A (ko) | 2007-08-24 |
TWI362115B (ja) | 2012-04-11 |
KR100892013B1 (ko) | 2009-04-07 |
TW200733402A (en) | 2007-09-01 |
CN101026173A (zh) | 2007-08-29 |
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