JP4770857B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4770857B2 JP4770857B2 JP2008083799A JP2008083799A JP4770857B2 JP 4770857 B2 JP4770857 B2 JP 4770857B2 JP 2008083799 A JP2008083799 A JP 2008083799A JP 2008083799 A JP2008083799 A JP 2008083799A JP 4770857 B2 JP4770857 B2 JP 4770857B2
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- 239000004065 semiconductor Substances 0.000 title claims description 58
- 239000010410 layer Substances 0.000 claims description 98
- 229910052751 metal Inorganic materials 0.000 claims description 84
- 239000002184 metal Substances 0.000 claims description 84
- 238000000034 method Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 239000011229 interlayer Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
120:受光素子領域
130:回路素子領域
200、300:半導体装置
210:多層配線領域
220、230、240:遮光メタル配線層
222、232、242、244:遮光壁
250:フィールド酸化膜
252:高濃度不純物領域
310、312、320、322、330、332、340、342:遮光壁
Claims (10)
- 半導体領域に形成された少なくとも1つの受光素子領域と、
半導体領域に形成された少なくとも1つの回路素子領域と、
前記受光素子領域を除く前記半導体領域上に形成された多層配線領域と、
を有し、
前記多層配線領域は、前記回路素子領域の回路素子に電気的に接続された多層構造の金属配線層と外部からの光を遮光する遮光壁とを含み、
前記遮光壁は、前記受光素子領域の外周に沿うように、前記多層構造の金属配線層と同一工程で形成され、
かつ、前記遮光壁は、断続的に分割されたホール形状に形成されており、前記ホール状の遮光壁は、千鳥状に複数列に配される、
半導体装置。 - 半導体領域に形成された少なくとも1つの受光素子領域と、
半導体領域に形成された少なくとも1つの回路素子領域と、
前記受光素子領域を除く前記半導体領域上に形成された多層配線領域と、
を有し、
前記多層配線領域は、前記回路素子領域の回路素子に電気的に接続された多層構造の金属配線層と外部からの光を遮光する遮光壁とを含み、
前記遮光壁は、前記回路素子領域の外周に沿うように、前記多層構造の金属配線層と同一工程で形成され、
かつ、前記遮光壁は、断続的に分割されたホール形状に形成されており、前記ホール状の遮光壁は、千鳥状に複数列に配される、
半導体装置。 - 半導体領域に形成された少なくとも1つの受光素子領域と、
半導体領域に形成された少なくとも1つの回路素子領域と、
前記受光素子領域を除く前記半導体領域上に形成された多層配線領域と、
を有し、
前記多層配線領域は、前記回路素子領域の回路素子に電気的に接続された多層構造の金属配線層と外部からの光を遮光する遮光壁とを含み、
前記遮光壁は、半導体チップの外周に沿うように、前記多層構造の金属配線層と同一工程で形成され、
かつ、前記遮光壁は、断続的に分割されたホール形状に形成されており、前記ホール状の遮光壁は、千鳥状に複数列に配される、
半導体装置。 - 前記多層配線領域は、少なくとも1つの遮光金属配線層を最上層に含み、前記遮光壁は、前記遮光金属配線層の外周に沿って配される、請求項1ないし3いずれか1つに記載の半導体装置。
- 前記遮光壁は、半導体領域に形成された不純物領域にオーミック接続されており、前記不純物領域に前記遮光壁を介して電圧が印加される、請求項1ないし4いずれか1つに記載の半導体装置。
- 前記遮光壁は、少なくとも上部金属層、下部金属層、上部および下部金属層間の絶縁膜に形成されたヴィアホール内の金属プラグを含む、請求項1ないし5いずれか1つに記載の半導体装置。
- 前記上部金属層は、前記最上層の遮光金属配線層とプラグによって接続される、請求項6に記載の半導体装置。
- 半導体領域に形成された少なくとも1つの受光素子領域と、
半導体領域に形成された少なくとも1つの回路素子領域と、
前記受光素子領域を除く前記半導体領域に形成された多層配線領域と、
を有し、
前記多層配線領域は、前記回路素子領域の回路素子に電気的に接続された多層構造の金属配線層と外部からの光を遮光する遮光壁とを含み、
前記遮光壁は、前記受光素子領域および前記回路素子領域の外周に沿うように、前記多層構造の金属配線層と同一工程で形成され、
かつ、前記遮光壁は、半導体領域に形成された不純物領域にオーミック接続されており、前記不純物領域に前記遮光壁を介して電圧が印加され、
前記多層構造の各々の金属層は層間絶縁膜に形成されたヴィアコンタクトによって接続されている、
半導体装置。 - 前記遮光壁は、断続的に分割されたホール形状に形成されており、前記ホール状の遮光壁は、千鳥状に複数列に配される、請求項8に記載の半導体装置。
- 請求項1ないし9いずれか1つに記載の半導体装置と、
記録媒体に光を照射する光源と、
を含み、
前記半導体装置の受光素子領域には、前記光源から出射された光の一部または前記記録媒体からの反射光が入射される、光学読取装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008083799A JP4770857B2 (ja) | 2008-03-27 | 2008-03-27 | 半導体装置 |
US12/412,834 US20090243016A1 (en) | 2008-03-27 | 2009-03-27 | Semiconductor device |
Applications Claiming Priority (1)
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---|---|---|---|
JP2008083799A JP4770857B2 (ja) | 2008-03-27 | 2008-03-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009239053A JP2009239053A (ja) | 2009-10-15 |
JP4770857B2 true JP4770857B2 (ja) | 2011-09-14 |
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JP2008083799A Active JP4770857B2 (ja) | 2008-03-27 | 2008-03-27 | 半導体装置 |
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US (1) | US20090243016A1 (ja) |
JP (1) | JP4770857B2 (ja) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5385564B2 (ja) * | 2008-08-18 | 2014-01-08 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
US8889455B2 (en) | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
US9515218B2 (en) | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
US8269985B2 (en) | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
US8229255B2 (en) | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
US8519379B2 (en) | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
US8791470B2 (en) | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
US8890271B2 (en) * | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
JP2011216865A (ja) * | 2010-03-17 | 2011-10-27 | Canon Inc | 固体撮像装置 |
JP5948007B2 (ja) | 2010-03-29 | 2016-07-06 | セイコーエプソン株式会社 | 分光センサー及び分光フィルター |
US10069023B2 (en) * | 2013-01-18 | 2018-09-04 | Texas Instruments Incorporated | Optical sensor with integrated pinhole |
JP2015053415A (ja) | 2013-09-09 | 2015-03-19 | 株式会社東芝 | フォトダイオード |
US9754984B2 (en) * | 2014-09-26 | 2017-09-05 | Visera Technologies Company Limited | Image-sensor structures |
JP5928557B2 (ja) * | 2014-11-10 | 2016-06-01 | セイコーエプソン株式会社 | 分光センサー及び角度制限フィルター |
JP6701149B2 (ja) * | 2017-10-25 | 2020-05-27 | キヤノン株式会社 | 撮像装置およびカメラ |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3827909B2 (ja) * | 2000-03-21 | 2006-09-27 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
JP2003264309A (ja) * | 2002-03-08 | 2003-09-19 | Toshiba Corp | 光半導体装置および光半導体装置の製造方法 |
KR100745985B1 (ko) * | 2004-06-28 | 2007-08-06 | 삼성전자주식회사 | 이미지 센서 |
US7193289B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Damascene copper wiring image sensor |
KR100666371B1 (ko) * | 2004-12-23 | 2007-01-09 | 삼성전자주식회사 | 이미지 소자의 제조 방법 |
US7935994B2 (en) * | 2005-02-24 | 2011-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light shield for CMOS imager |
JP5049036B2 (ja) * | 2007-03-28 | 2012-10-17 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP4302751B2 (ja) * | 2007-03-29 | 2009-07-29 | Okiセミコンダクタ株式会社 | 半導体光センサ |
-
2008
- 2008-03-27 JP JP2008083799A patent/JP4770857B2/ja active Active
-
2009
- 2009-03-27 US US12/412,834 patent/US20090243016A1/en not_active Abandoned
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US20090243016A1 (en) | 2009-10-01 |
JP2009239053A (ja) | 2009-10-15 |
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