JP5049036B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5049036B2 JP5049036B2 JP2007084640A JP2007084640A JP5049036B2 JP 5049036 B2 JP5049036 B2 JP 5049036B2 JP 2007084640 A JP2007084640 A JP 2007084640A JP 2007084640 A JP2007084640 A JP 2007084640A JP 5049036 B2 JP5049036 B2 JP 5049036B2
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- 239000004065 semiconductor Substances 0.000 title claims description 47
- 239000010410 layer Substances 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 36
- 239000011229 interlayer Substances 0.000 claims description 35
- 238000005192 partition Methods 0.000 claims description 28
- 238000002955 isolation Methods 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 9
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 238000009751 slip forming Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- -1 SOG Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
Claims (4)
- 共通の半導体基板に受光部と回路部とが隣接配置される半導体装置であって、
前記半導体基板上に積層され、層間絶縁膜を含む配線構造層と、
前記配線構造層に形成される配線と、
前記受光部の位置に、前記配線構造層を少なくとも一部の厚みについて除去して形成された前記配線構造層の開口部と、
前記受光部と前記回路部との境界に沿って前記開口部に隣接する前記配線構造層内に形成された金属材からなる仕切壁と、
前記半導体基板の表面に形成された拡散層領域であって前記受光部の外周に沿って帯状に形成された分離領域と、
を有し、
前記配線構造層は、前記層間絶縁膜を貫通するトレンチ部を前記境界に沿って帯状に形成され、
前記仕切壁は、前記トレンチ部に埋設された金属材からなるプラグ部を含んで構成される、前記配線と前記分離領域とを電気的に接続するコンタクト構造により形成され、前記分離領域を前記配線により供給される接地電位に設定すること、
を特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記受光部における前記半導体基板の表面に形成された拡散層領域であって、前記受光部への入射光により生じた信号電荷を集める電極領域を有し、
前記分離領域は前記外周の一部に切断部分を設けられ、
前記電極領域は、前記分離領域の前記切断部分を通って前記仕切壁より外側に引き出された延長部分を有し、
前記配線構造層は、前記信号電荷を前記電極領域から前記回路部へ読み出す配線を有し、
前記配線は前記延長部分にて前記電極領域に電気的に接続されること、
を特徴とする半導体装置。 - 請求項1又は請求項2に記載の半導体装置において、
前記分離領域は第1導電型の拡散層領域であり、
前記受光部は、前記半導体基板をなす第1導電型の半導体層、及び前記分離領域をアノード及びカソードの一方とし、当該受光部における前記半導体基板の表面に形成された第2導電型の拡散層領域である電極領域を前記アノード及びカソードの他方とするフォトダイオードであること、
を特徴とする半導体装置。 - 請求項1から請求項3のいずれか1つに記載の半導体装置において、
前記配線構造層は、前記層間絶縁膜を複数層含む多層配線構造であり、
前記コンタクト構造は、前記各層間絶縁膜それぞれ形成された前記各プラグ部を積み重ねて形成され、
複数段の前記プラグ部のうちの少なくとも一部の段は、前記開口部の全周に連続して形成されること、
を特徴とする半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007084640A JP5049036B2 (ja) | 2007-03-28 | 2007-03-28 | 半導体装置 |
US12/076,510 US7821092B2 (en) | 2007-03-28 | 2008-03-19 | Semiconductor device |
CN2008100876123A CN101276825B (zh) | 2007-03-28 | 2008-03-25 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007084640A JP5049036B2 (ja) | 2007-03-28 | 2007-03-28 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008244269A JP2008244269A (ja) | 2008-10-09 |
JP5049036B2 true JP5049036B2 (ja) | 2012-10-17 |
Family
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007084640A Active JP5049036B2 (ja) | 2007-03-28 | 2007-03-28 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7821092B2 (ja) |
JP (1) | JP5049036B2 (ja) |
CN (1) | CN101276825B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4770857B2 (ja) * | 2008-03-27 | 2011-09-14 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置 |
JP5684491B2 (ja) * | 2010-04-27 | 2015-03-11 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
WO2011160130A2 (en) * | 2010-06-18 | 2011-12-22 | Sionyx, Inc | High speed photosensitive devices and associated methods |
JP2013156325A (ja) * | 2012-01-27 | 2013-08-15 | Seiko Epson Corp | 分光センサー及び角度制限フィルター |
US9163984B2 (en) | 2011-03-17 | 2015-10-20 | Seiko Epson Corporation | Spectroscopic sensor and angle limiting filter |
JP2015053415A (ja) * | 2013-09-09 | 2015-03-19 | 株式会社東芝 | フォトダイオード |
CN109830197B (zh) * | 2019-01-17 | 2022-03-15 | 昆山国显光电有限公司 | 一种测试导线排版结构、显示面板和显示装置 |
CN110264891B (zh) * | 2019-07-18 | 2022-02-01 | 京东方科技集团股份有限公司 | 阵列基板、显示面板和显示装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1050966A (ja) | 1996-07-31 | 1998-02-20 | Sanyo Electric Co Ltd | 光半導体集積回路 |
US6218719B1 (en) * | 1998-09-18 | 2001-04-17 | Capella Microsystems, Inc. | Photodetector and device employing the photodetector for converting an optical signal into an electrical signal |
JP4131059B2 (ja) | 1999-08-23 | 2008-08-13 | ソニー株式会社 | 受光素子を有する半導体装置、光学ピックアップ装置、および受光素子を有する半導体装置の製造方法 |
US6412786B1 (en) * | 1999-11-24 | 2002-07-02 | United Microelectronics Corp. | Die seal ring |
JP3827909B2 (ja) * | 2000-03-21 | 2006-09-27 | シャープ株式会社 | 固体撮像装置およびその製造方法 |
JP2005109047A (ja) * | 2003-09-29 | 2005-04-21 | Sanyo Electric Co Ltd | 光半導体集積回路装置及びその製造方法 |
US7193289B2 (en) * | 2004-11-30 | 2007-03-20 | International Business Machines Corporation | Damascene copper wiring image sensor |
US7935994B2 (en) * | 2005-02-24 | 2011-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light shield for CMOS imager |
US7485486B2 (en) * | 2005-03-18 | 2009-02-03 | Intersil Americas Inc. | Photodiode for multiple wavelength operation |
JP2007227445A (ja) * | 2006-02-21 | 2007-09-06 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
-
2007
- 2007-03-28 JP JP2007084640A patent/JP5049036B2/ja active Active
-
2008
- 2008-03-19 US US12/076,510 patent/US7821092B2/en active Active
- 2008-03-25 CN CN2008100876123A patent/CN101276825B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN101276825B (zh) | 2012-06-20 |
US20080237759A1 (en) | 2008-10-02 |
US7821092B2 (en) | 2010-10-26 |
CN101276825A (zh) | 2008-10-01 |
JP2008244269A (ja) | 2008-10-09 |
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