JP2005109049A - 光半導体集積回路装置の製造方法 - Google Patents
光半導体集積回路装置の製造方法 Download PDFInfo
- Publication number
- JP2005109049A JP2005109049A JP2003338857A JP2003338857A JP2005109049A JP 2005109049 A JP2005109049 A JP 2005109049A JP 2003338857 A JP2003338857 A JP 2003338857A JP 2003338857 A JP2003338857 A JP 2003338857A JP 2005109049 A JP2005109049 A JP 2005109049A
- Authority
- JP
- Japan
- Prior art keywords
- film
- photodiode
- etching
- integrated circuit
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 230000003287 optical effect Effects 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000001312 dry etching Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000001039 wet etching Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 10
- 230000035945 sensitivity Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 238000003754 machining Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 31
- 238000009792 diffusion process Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Bipolar Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】本発明の光半導体集積回路装置では、シリコン基板24上面に多層の配線層を形成した後、フォトダイオード21の反射防止膜上面の絶縁層をドライエッチングにより、除去している。この時、多結晶シリコン膜51をエッチングストッパー膜として用いている。そのことで、本発明のフォトダイオードでは、ドライエッチングを用いるが、反射防止膜であるシリコン窒化膜をオーバーエッチングすることがないので、その膜厚のばらつきを防ぐことができる。その結果、本発明のフォトダイオードでは、入射光の感度の向上を実現でき、微細化構造を実現できる。
【選択図】図10
Description
エピタキシャル層26表面を熱酸化する。その後,N2ガスで約1180℃の熱処理を2時間程度加えて分離領域を再度拡散させる。この熱処理により、第2分離領域32がシリコン表面側に拡散されるので、その分後述の第3分離領域33を浅く拡散させることができる。従って、第3分離領域33の横方向拡散を抑制でき、第3分離領域33の表面占有面積を縮小可能である。この結果集積度を向上できる。そして、シリコン酸化膜をフォトエッチして選択マスクとする。その後、第3分離領域33を形成するボロン(B)を拡散させる。第1と第2のエピタキシャル層25、26は、両者を完全に貫通するP+型分離領域27によってフォトダイオード21を形成する第1の島領域28と、容量素子22を形成する第2の島領域29と、NPNトランジスタ23を形成する第3の島領域30とに電気的に分離される。そしてベースにイオン注入し、N2ガスで約1100℃の熱処理を1時間程度加えてベース拡散を行ってNPNトランジスタのベース領域42を形成する。
23 NPNトランジスタ
22 容量素子
51 多結晶シリコン膜
50 ノンドープのシリコン酸化膜
52 シリコン酸化膜
Claims (3)
- 半導体基板を準備し、該半導体基板上に半導体層を形成し、該半導体層にフォトダイオードを形成する工程と、
前記フォトダイオード形成領域の前記半導体層表面にシリコン窒化膜を形成した後、該シリコン窒化膜上にシリコン酸化膜を形成する工程と、
前記シリコン酸化膜上に多結晶シリコン膜を形成する工程と、
前記多結晶シリコン膜上面に絶縁層を積層する工程と、
該絶縁層表面からドライエッチングにより前記フォトダイオード形成領域の前記絶縁層を除去する工程と、
前記シリコン酸化膜と前記多結晶シリコン膜を除去し、前記シリコン窒化膜を露出させる工程とを具備することを特徴とする光半導体集積回路装置の製造方法。 - 前記絶縁層を除去する工程では、前記多結晶シリコン膜をエッチングストッパー膜として用い、前記ドライエッチングにより前記絶縁層を除去することを特徴とする請求項1に記載の光半導体集積回路装置の製造方法。
- 前記多結晶シリコン膜を除去する工程では、前記シリコン酸化膜をエッチングストッパー膜として用い、ドライエッチングにより前記多結晶シリコン膜を除去し、
前記シリコン酸化膜を除去する工程では、前記シリコン窒化膜をエッチングストッパー膜として用い、ウエットエッチングにより前記シリコン酸化膜を除去することを特徴とする請求項2に記載の光半導体集積回路装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003338857A JP4338490B2 (ja) | 2003-09-29 | 2003-09-29 | 光半導体集積回路装置の製造方法 |
TW093128530A TWI267209B (en) | 2003-09-29 | 2004-09-21 | Method for making photo semiconductor device |
KR1020040076321A KR100650459B1 (ko) | 2003-09-29 | 2004-09-23 | 광 반도체 집적 회로 장치의 제조 방법 |
US10/948,740 US7067347B2 (en) | 2003-09-29 | 2004-09-24 | Method of manufacturing optical semiconductor integrated circuit device |
CNB2004100120156A CN1312756C (zh) | 2003-09-29 | 2004-09-28 | 光半导体集成电路装置的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003338857A JP4338490B2 (ja) | 2003-09-29 | 2003-09-29 | 光半導体集積回路装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005109049A true JP2005109049A (ja) | 2005-04-21 |
JP4338490B2 JP4338490B2 (ja) | 2009-10-07 |
Family
ID=34534205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003338857A Expired - Fee Related JP4338490B2 (ja) | 2003-09-29 | 2003-09-29 | 光半導体集積回路装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7067347B2 (ja) |
JP (1) | JP4338490B2 (ja) |
KR (1) | KR100650459B1 (ja) |
CN (1) | CN1312756C (ja) |
TW (1) | TWI267209B (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227445A (ja) * | 2006-02-21 | 2007-09-06 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2007294760A (ja) * | 2006-04-26 | 2007-11-08 | Sanyo Electric Co Ltd | 集積回路製造方法 |
JP2008300789A (ja) * | 2007-06-04 | 2008-12-11 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
JP2009049317A (ja) * | 2007-08-22 | 2009-03-05 | Nec Electronics Corp | 半導体装置及びその製造方法 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007036034A (ja) * | 2005-07-28 | 2007-02-08 | Fujifilm Corp | 固体撮像素子の製造方法及び固体撮像素子 |
CN100414685C (zh) * | 2006-08-28 | 2008-08-27 | 汤庆敏 | 一种半导体器件芯片穿通隔离区及pn结的制造工艺 |
KR100840099B1 (ko) | 2007-07-04 | 2008-06-19 | 삼성에스디아이 주식회사 | 포토 다이어드를 구비한 유기전계발광 소자의 제조 방법 |
KR100840098B1 (ko) | 2007-07-04 | 2008-06-19 | 삼성에스디아이 주식회사 | 유기전계발광 소자 및 그의 제조 방법 |
KR100884458B1 (ko) | 2007-09-14 | 2009-02-20 | 삼성모바일디스플레이주식회사 | 유기전계발광장치 및 그의 제조 방법 |
CN105336750B (zh) * | 2014-06-04 | 2018-06-29 | 无锡华润上华科技有限公司 | 半导体器件及其制作方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR930011308A (ko) * | 1991-11-22 | 1993-06-24 | 김광호 | 이미지 센서의 제조방법 |
US5682455A (en) * | 1996-02-29 | 1997-10-28 | Northern Telecom Limited | Semiconductor optical waveguide |
JP2928163B2 (ja) | 1996-07-30 | 1999-08-03 | 山形日本電気株式会社 | 半導体装置の製造方法 |
US6218719B1 (en) * | 1998-09-18 | 2001-04-17 | Capella Microsystems, Inc. | Photodetector and device employing the photodetector for converting an optical signal into an electrical signal |
JP2001320078A (ja) | 2000-05-10 | 2001-11-16 | Sanyo Electric Co Ltd | 光半導体装置およびその製造方法 |
JP4107855B2 (ja) * | 2002-03-11 | 2008-06-25 | シャープ株式会社 | 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置 |
-
2003
- 2003-09-29 JP JP2003338857A patent/JP4338490B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-21 TW TW093128530A patent/TWI267209B/zh not_active IP Right Cessation
- 2004-09-23 KR KR1020040076321A patent/KR100650459B1/ko not_active IP Right Cessation
- 2004-09-24 US US10/948,740 patent/US7067347B2/en not_active Expired - Fee Related
- 2004-09-28 CN CNB2004100120156A patent/CN1312756C/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227445A (ja) * | 2006-02-21 | 2007-09-06 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2007294760A (ja) * | 2006-04-26 | 2007-11-08 | Sanyo Electric Co Ltd | 集積回路製造方法 |
JP2008300789A (ja) * | 2007-06-04 | 2008-12-11 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
JP2009049317A (ja) * | 2007-08-22 | 2009-03-05 | Nec Electronics Corp | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1312756C (zh) | 2007-04-25 |
US20050118815A1 (en) | 2005-06-02 |
KR20050031397A (ko) | 2005-04-06 |
TW200518358A (en) | 2005-06-01 |
JP4338490B2 (ja) | 2009-10-07 |
CN1612320A (zh) | 2005-05-04 |
TWI267209B (en) | 2006-11-21 |
US7067347B2 (en) | 2006-06-27 |
KR100650459B1 (ko) | 2006-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4107855B2 (ja) | 受光素子内蔵型半導体装置の製造方法及び受光素子内蔵型半導体装置 | |
JP2006261161A (ja) | 半導体装置の製造方法 | |
JP4338490B2 (ja) | 光半導体集積回路装置の製造方法 | |
JP3952752B2 (ja) | 半導体装置の製造方法 | |
JP4152352B2 (ja) | 光半導体装置およびその製造方法 | |
JP2973948B2 (ja) | 半導体装置の製造方法 | |
JP2005286093A (ja) | 光半導体集積回路装置 | |
JP3295393B2 (ja) | 半導体装置の製造方法 | |
KR100443079B1 (ko) | 반도체 장치의 제조방법 | |
JP2767104B2 (ja) | 半導体装置の製造方法 | |
JP2003258219A (ja) | 光半導体集積回路装置の製造方法 | |
JP2007180196A (ja) | 半導体装置及びその製造方法 | |
JP2005286094A (ja) | 光半導体集積回路装置 | |
JP2006351998A (ja) | 半導体装置の製造方法及び半導体装置 | |
JP2721726B2 (ja) | 半導体集積回路装置およびその製造方法 | |
JP2008243863A (ja) | Pinダイオードとその製造方法 | |
JP2003264272A (ja) | 光半導体集積回路装置およびその製造方法 | |
KR19990000376A (ko) | 반도체 소자 제조방법 | |
JPH0389563A (ja) | 半導体装置 | |
JPS63283060A (ja) | 絶縁分離型半導体装置およびその製造方法 | |
JPH11261003A (ja) | 半導体装置及びその製造方法 | |
JPH05152586A (ja) | Misダイオードの製造方法 | |
KR19990055780A (ko) | 반도체 소자의 제조방법 | |
JPH04275157A (ja) | 傾斜面を有する絶縁膜の形成方法 | |
KR20020009767A (ko) | 반도체 소자의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20051226 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060920 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080922 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080930 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090217 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090413 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090602 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090630 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4338490 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120710 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130710 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |