JP4236294B2 - 上部にソレノイドアンテナを有する電磁結合ｒｆプラズマリアクター - Google Patents

上部にソレノイドアンテナを有する電磁結合ｒｆプラズマリアクター Download PDF

Info

Publication number
JP4236294B2
JP4236294B2 JP12267997A JP12267997A JP4236294B2 JP 4236294 B2 JP4236294 B2 JP 4236294B2 JP 12267997 A JP12267997 A JP 12267997A JP 12267997 A JP12267997 A JP 12267997A JP 4236294 B2 JP4236294 B2 JP 4236294B2
Authority
JP
Japan
Prior art keywords
antenna
plasma
workpiece
induction
ceiling plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP12267997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1092598A5 (enExample
JPH1092598A (ja
Inventor
エス． コリンズ ケネス
ライス マイケル
トロー ジョン
ブクバーガー ダグラス
エー． ロデリック クレイグ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JPH1092598A publication Critical patent/JPH1092598A/ja
Publication of JPH1092598A5 publication Critical patent/JPH1092598A5/ja
Application granted granted Critical
Publication of JP4236294B2 publication Critical patent/JP4236294B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/22—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by diffusion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/22—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by diffusion
    • B01D53/225—Multiple stage diffusion
    • B01D53/226—Multiple stage diffusion in serial connexion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/26—Drying gases or vapours
    • B01D53/268—Drying gases or vapours by diffusion
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32688—Multi-cusp fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F29/00—Variable transformers or inductances not covered by group H01F21/00
    • H01F29/14—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias
    • H01F2029/143—Variable transformers or inductances not covered by group H01F21/00 with variable magnetic bias with control winding for generating magnetic bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3345—Problems associated with etching anisotropy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP12267997A 1996-05-13 1997-05-13 上部にソレノイドアンテナを有する電磁結合ｒｆプラズマリアクター Expired - Lifetime JP4236294B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/648254 1996-05-13
US08/648,254 US6165311A (en) 1991-06-27 1996-05-13 Inductively coupled RF plasma reactor having an overhead solenoidal antenna

Publications (3)

Publication Number Publication Date
JPH1092598A JPH1092598A (ja) 1998-04-10
JPH1092598A5 JPH1092598A5 (enExample) 2005-04-07
JP4236294B2 true JP4236294B2 (ja) 2009-03-11

Family

ID=24600054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12267997A Expired - Lifetime JP4236294B2 (ja) 1996-05-13 1997-05-13 上部にソレノイドアンテナを有する電磁結合ｒｆプラズマリアクター

Country Status (5)

Country Link
US (4) US6165311A (enExample)
EP (1) EP0807953A1 (enExample)
JP (1) JP4236294B2 (enExample)
KR (1) KR970077318A (enExample)
TW (1) TW329018B (enExample)

Families Citing this family (142)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US6074512A (en) * 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
TW279240B (en) 1995-08-30 1996-06-21 Applied Materials Inc Parallel-plate icp source/rf bias electrode head
US6231776B1 (en) 1995-12-04 2001-05-15 Daniel L. Flamm Multi-temperature processing
US6534922B2 (en) * 1996-09-27 2003-03-18 Surface Technology Systems, Plc Plasma processing apparatus
US6028395A (en) * 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part
US6123862A (en) 1998-04-24 2000-09-26 Micron Technology, Inc. Method of forming high aspect ratio apertures
JP3567736B2 (ja) * 1998-05-25 2004-09-22 株式会社日立製作所 プラズマ処理装置
JP4014300B2 (ja) * 1998-06-19 2007-11-28 東京エレクトロン株式会社 プラズマ処理装置
EP1125314A1 (en) 1998-07-10 2001-08-22 Applied Materials, Inc. Improved endpoint detection for substrate fabrication processes
JP2000315598A (ja) * 1999-03-03 2000-11-14 Anelva Corp プラズマ処理装置
JP3959200B2 (ja) * 1999-03-19 2007-08-15 株式会社東芝 半導体装置の製造装置
KR100338057B1 (ko) * 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
KR20010047103A (ko) * 1999-11-17 2001-06-15 윤종용 웨이퍼 식각장치
KR100581998B1 (ko) * 1999-11-17 2006-05-23 삼성전자주식회사 웨이퍼 식각장치
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
US7096819B2 (en) * 2001-03-30 2006-08-29 Lam Research Corporation Inductive plasma processor having coil with plural windings and method of controlling plasma density
US6527912B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Stacked RF excitation coil for inductive plasma processor
US6554954B2 (en) 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
US6676760B2 (en) * 2001-08-16 2004-01-13 Appiled Materials, Inc. Process chamber having multiple gas distributors and method
WO2003030239A1 (en) * 2001-09-28 2003-04-10 Sumitomo Precision Products Co., Ltd. Silicon substrate etching method and etching apparatus
US7084832B2 (en) * 2001-10-09 2006-08-01 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
US7132996B2 (en) * 2001-10-09 2006-11-07 Plasma Control Systems Llc Plasma production device and method and RF driver circuit
US7100532B2 (en) * 2001-10-09 2006-09-05 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
US6597117B2 (en) * 2001-11-30 2003-07-22 Samsung Austin Semiconductor, L.P. Plasma coil
US20030141178A1 (en) * 2002-01-30 2003-07-31 Applied Materials, Inc. Energizing gas for substrate processing with shockwaves
TWI241868B (en) * 2002-02-06 2005-10-11 Matsushita Electric Industrial Co Ltd Plasma processing method and apparatus
US6737358B2 (en) * 2002-02-13 2004-05-18 Intel Corporation Plasma etching uniformity control
JP3820188B2 (ja) * 2002-06-19 2006-09-13 三菱重工業株式会社 プラズマ処理装置及びプラズマ処理方法
JP2004047696A (ja) * 2002-07-11 2004-02-12 Matsushita Electric Ind Co Ltd プラズマドーピング方法及び装置、整合回路
US20040018741A1 (en) * 2002-07-26 2004-01-29 Applied Materials, Inc. Method For Enhancing Critical Dimension Uniformity After Etch
US20040025791A1 (en) * 2002-08-09 2004-02-12 Applied Materials, Inc. Etch chamber with dual frequency biasing sources and a single frequency plasma generating source
US6837937B2 (en) * 2002-08-27 2005-01-04 Hitachi High-Technologies Corporation Plasma processing apparatus
KR100457844B1 (ko) * 2002-08-27 2004-11-18 삼성전자주식회사 반도체 장치의 식각 방법
JP4753276B2 (ja) * 2002-11-26 2011-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US6872909B2 (en) * 2003-04-16 2005-03-29 Applied Science And Technology, Inc. Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel
US6905624B2 (en) * 2003-07-07 2005-06-14 Applied Materials, Inc. Interferometric endpoint detection in a substrate etching process
US20050178336A1 (en) * 2003-07-15 2005-08-18 Heng Liu Chemical vapor deposition reactor having multiple inlets
US20050011459A1 (en) * 2003-07-15 2005-01-20 Heng Liu Chemical vapor deposition reactor
US20050106873A1 (en) * 2003-08-15 2005-05-19 Hoffman Daniel J. Plasma chamber having multiple RF source frequencies
KR101038204B1 (ko) * 2004-02-25 2011-05-31 주성엔지니어링(주) 플라즈마 발생용 안테나
US20050227382A1 (en) * 2004-04-02 2005-10-13 Hui Angela T In-situ surface treatment for memory cell formation
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7886688B2 (en) * 2004-09-29 2011-02-15 Sekisui Chemical Co., Ltd. Plasma processing apparatus
US8328942B2 (en) * 2004-12-17 2012-12-11 Lam Research Corporation Wafer heating and temperature control by backside fluid injection
JP2006216903A (ja) * 2005-02-07 2006-08-17 Hitachi High-Technologies Corp プラズマ処理装置
JP2006237479A (ja) * 2005-02-28 2006-09-07 Mitsubishi Heavy Ind Ltd プラズマ処理装置
US7674393B2 (en) 2005-03-25 2010-03-09 Tokyo Electron Limited Etching method and apparatus
US7651587B2 (en) * 2005-08-11 2010-01-26 Applied Materials, Inc. Two-piece dome with separate RF coils for inductively coupled plasma reactors
US7695633B2 (en) * 2005-10-18 2010-04-13 Applied Materials, Inc. Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
US8911590B2 (en) * 2006-02-27 2014-12-16 Lam Research Corporation Integrated capacitive and inductive power sources for a plasma etching chamber
JP4782585B2 (ja) * 2006-02-28 2011-09-28 株式会社日立ハイテクノロジーズ プラズマエッチング装置及び方法
US8187415B2 (en) * 2006-04-21 2012-05-29 Applied Materials, Inc. Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
US20070249173A1 (en) * 2006-04-21 2007-10-25 Applied Materials, Inc. Plasma etch process using etch uniformity control by using compositionally independent gas feed
US20070245961A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling plasma ion dissociation
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US20070246163A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and inductive plasma sources
US20070246162A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with an inductive plasma source and a VHF capacitively coupled plasma source with variable frequency
US20070246443A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation
US20070245960A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion density
US20070245958A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
US7727413B2 (en) * 2006-04-24 2010-06-01 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
US20070246161A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with a toroidal plasma source and a VHF capacitively coupled plasma source with variable frequency
US7780864B2 (en) * 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US7264688B1 (en) 2006-04-24 2007-09-04 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and toroidal plasma sources
US20070254483A1 (en) * 2006-04-28 2007-11-01 Applied Materials, Inc. Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity
US7540971B2 (en) * 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
US7541292B2 (en) * 2006-04-28 2009-06-02 Applied Materials, Inc. Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
US7431859B2 (en) * 2006-04-28 2008-10-07 Applied Materials, Inc. Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation
CN101136279B (zh) * 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体装置
US7845310B2 (en) * 2006-12-06 2010-12-07 Axcelis Technologies, Inc. Wide area radio frequency plasma apparatus for processing multiple substrates
US8444926B2 (en) 2007-01-30 2013-05-21 Applied Materials, Inc. Processing chamber with heated chamber liner
US8956500B2 (en) * 2007-04-24 2015-02-17 Applied Materials, Inc. Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactor
US20090096349A1 (en) * 2007-04-26 2009-04-16 Moshtagh Vahid S Cross flow cvd reactor
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
US20090004873A1 (en) * 2007-06-26 2009-01-01 Intevac, Inc. Hybrid etch chamber with decoupled plasma controls
US7879250B2 (en) * 2007-09-05 2011-02-01 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
US7832354B2 (en) * 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
JP5347294B2 (ja) * 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US8668775B2 (en) * 2007-10-31 2014-03-11 Toshiba Techno Center Inc. Machine CVD shower head
KR100881954B1 (ko) * 2007-11-09 2009-02-06 한국전자통신연구원 반응성 스퍼터링 증착 장치
US8062472B2 (en) * 2007-12-19 2011-11-22 Applied Materials, Inc. Method of correcting baseline skew by a novel motorized source coil assembly
US8137463B2 (en) * 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US8999106B2 (en) * 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US20090162570A1 (en) * 2007-12-19 2009-06-25 Applied Materials, Inc. Apparatus and method for processing a substrate using inductively coupled plasma technology
US8066895B2 (en) * 2008-02-28 2011-11-29 Applied Materials, Inc. Method to control uniformity using tri-zone showerhead
US20090220865A1 (en) * 2008-02-29 2009-09-03 Applied Materials, Inc. Method and apparatus for source field shaping in a plasma etch reactor
US8849585B2 (en) * 2008-06-26 2014-09-30 Lam Research Corporation Methods for automatically characterizing a plasma
US8164349B2 (en) 2008-07-07 2012-04-24 Lam Research Corporation Capacitively-coupled electrostatic (CCE) probe arrangement for detecting strike step in a plasma processing chamber and methods thereof
WO2010005932A2 (en) * 2008-07-07 2010-01-14 Lam Research Corporation Plasma-facing probe arrangement including vacuum gap for use in a plasma processing chamber
CN102084471B (zh) 2008-07-07 2012-11-28 朗姆研究公司 用于检测等离子体处理室中的等离子体不稳定的无源电容耦合静电(cce)探针装置
TWI458850B (zh) * 2008-07-07 2014-11-01 Lam Res Corp 用來鑑定電漿處理腔室中之薄膜之特性的射頻偏壓電容耦合靜電探針裝置
WO2010005929A2 (en) 2008-07-07 2010-01-14 Lam Research Corporation Passive capacitively-coupled electrostatic (cce) probe arrangement for detecting in-situ arcing events in a plasma processing chamber
WO2010005931A2 (en) * 2008-07-07 2010-01-14 Lam Research Corporation Capacitively-coupled electrostatic (cce) probe arrangement for detecting dechucking in a plasma processing chamber and methods thereof
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8627783B2 (en) * 2008-12-19 2014-01-14 Lam Research Corporation Combined wafer area pressure control and plasma confinement assembly
US8642128B2 (en) * 2009-04-20 2014-02-04 Applied Materials, Inc. Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber walls
US20100297347A1 (en) * 2009-04-24 2010-11-25 Applied Materials, Inc. Substrate support having side gas outlets and methods
US20110120375A1 (en) * 2009-11-23 2011-05-26 Jusung Engineering Co., Ltd. Apparatus for processing substrate
US8591755B2 (en) * 2010-09-15 2013-11-26 Lam Research Corporation Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
US9653264B2 (en) * 2010-12-17 2017-05-16 Mattson Technology, Inc. Inductively coupled plasma source for plasma processing
US20120152900A1 (en) * 2010-12-20 2012-06-21 Applied Materials, Inc. Methods and apparatus for gas delivery into plasma processing chambers
US8808561B2 (en) * 2011-11-15 2014-08-19 Lam Research Coporation Inert-dominant pulsing in plasma processing systems
JP5929429B2 (ja) * 2012-03-30 2016-06-08 東京エレクトロン株式会社 成膜装置
JP6011417B2 (ja) * 2012-06-15 2016-10-19 東京エレクトロン株式会社 成膜装置、基板処理装置及び成膜方法
KR102104018B1 (ko) * 2013-03-12 2020-04-23 어플라이드 머티어리얼스, 인코포레이티드 방위각 및 방사상 분배 제어되는 다중-구역 가스 주입 조립체
JP6362670B2 (ja) * 2013-03-15 2018-07-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ポリマーを管理することによるエッチングシステムの生産性の向上
US9275869B2 (en) 2013-08-02 2016-03-01 Lam Research Corporation Fast-gas switching for etching
JP6169701B2 (ja) 2013-08-09 2017-07-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20150162169A1 (en) * 2013-12-05 2015-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Etching apparatus and method
CN104743496B (zh) * 2013-12-29 2017-03-22 北京北方微电子基地设备工艺研究中心有限责任公司 深硅刻蚀方法和用于深硅刻蚀的设备
US10249511B2 (en) 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
WO2016040547A1 (en) 2014-09-11 2016-03-17 Massachusetts Institute Of Technology Processing system for small substrates
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
CN113382551B (zh) * 2015-05-06 2025-01-10 哈钦森技术股份有限公司 用于硬盘驱动器的挠曲部的等离子体处理
CN104918401A (zh) * 2015-05-26 2015-09-16 山东专利工程总公司 一种感应耦合型等离子体处理装置
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10699878B2 (en) * 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10504720B2 (en) 2016-11-29 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Etching using chamber with top plate formed of non-oxygen containing material
US11424104B2 (en) 2017-04-24 2022-08-23 Applied Materials, Inc. Plasma reactor with electrode filaments extending from ceiling
US10510515B2 (en) 2017-06-22 2019-12-17 Applied Materials, Inc. Processing tool with electrically switched electrode assembly
US11355321B2 (en) 2017-06-22 2022-06-07 Applied Materials, Inc. Plasma reactor with electrode assembly for moving substrate
US11114284B2 (en) * 2017-06-22 2021-09-07 Applied Materials, Inc. Plasma reactor with electrode array in ceiling
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
WO2019124119A1 (ja) * 2017-12-21 2019-06-27 東京エレクトロン株式会社 基板支持部材、基板処理装置及び基板搬送装置
US11153960B1 (en) * 2018-06-08 2021-10-19 Innoveering, LLC Plasma-based electro-optical sensing and methods
US11114306B2 (en) * 2018-09-17 2021-09-07 Applied Materials, Inc. Methods for depositing dielectric material
KR102041518B1 (ko) * 2019-07-18 2019-11-06 에이피티씨 주식회사 분리형 플라즈마 소스 코일 및 이의 제어 방법
JP7466686B2 (ja) 2020-03-23 2024-04-12 ラム リサーチ コーポレーション 基板処理システムにおける中間リング腐食補償
US12033835B2 (en) * 2020-06-10 2024-07-09 Applied Materials, Inc. Modular microwave source with multiple metal housings
CN111638569B (zh) * 2020-07-17 2022-04-22 中国人民解放军空军工程大学 一种射频感性耦合等离子体叠加相位梯度超表面吸波结构
CN112011774B (zh) * 2020-08-25 2022-09-16 北京北方华创微电子装备有限公司 半导体设备及其半导体腔室以及半导体冷却方法
KR102787323B1 (ko) 2020-09-24 2025-03-27 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
JP2024535295A (ja) * 2021-09-20 2024-09-30 ラム リサーチ コーポレーション Ｉｃｐ源におけるｒｆ電力の増加を軽減するための筐体
KR102696031B1 (ko) * 2022-04-26 2024-08-16 주식회사 테스 램프유닛 및 하이브리드 챔버
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control

Family Cites Families (142)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB231197A (en) 1924-03-24 1925-08-06 Peter August Nordling Improvement in hooks and the like
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
GB1550853A (en) * 1975-10-06 1979-08-22 Hitachi Ltd Apparatus and process for plasma treatment
US4233109A (en) 1976-01-16 1980-11-11 Zaidan Hojin Handotai Kenkyu Shinkokai Dry etching method
JPS559464A (en) 1978-07-07 1980-01-23 Toshiba Corp Production method of bipolar integrated circuit containing i2 l
JPS55154582A (en) * 1979-05-21 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Gas plasma etching method
US4261762A (en) * 1979-09-14 1981-04-14 Eaton Corporation Method for conducting heat to or from an article being treated under vacuum
JPS6056431B2 (ja) * 1980-10-09 1985-12-10 三菱電機株式会社 プラズマエツチング装置
JPS57155732A (en) * 1981-03-20 1982-09-25 Sharp Corp Dry etching
US4368092A (en) 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
US4350578A (en) * 1981-05-11 1982-09-21 International Business Machines Corporation Cathode for etching
US4427516A (en) * 1981-08-24 1984-01-24 Bell Telephone Laboratories, Incorporated Apparatus and method for plasma-assisted etching of wafers
EP0082015A1 (en) * 1981-12-16 1983-06-22 Konica Corporation Method of forming an image with a photographic cuprous halide material
US4512391A (en) * 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
JPS6060060A (ja) * 1983-09-12 1985-04-06 株式会社日立製作所 鉄道車両の扉開閉装置
US4579080A (en) 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS6191377A (ja) * 1984-10-12 1986-05-09 Anelva Corp 表面処理装置
US4735902A (en) 1984-10-23 1988-04-05 Matti Siren Stabilized composition containing inositoltriphosphate
JPH07118474B2 (ja) * 1984-12-17 1995-12-18 ソニー株式会社 エツチングガス及びこれを用いたエツチング方法
JPS61147531A (ja) * 1984-12-21 1986-07-05 Toshiba Corp 反応性イオンエツチング方法
US4572759A (en) 1984-12-26 1986-02-25 Benzing Technology, Inc. Troide plasma reactor with magnetic enhancement
US4870245A (en) * 1985-04-01 1989-09-26 Motorola, Inc. Plasma enhanced thermal treatment apparatus
US4810935A (en) * 1985-05-03 1989-03-07 The Australian National University Method and apparatus for producing large volume magnetoplasmas
JPS627268A (ja) 1985-07-03 1987-01-14 Nec Corp フアクシミリ装置
JPS6212129A (ja) * 1985-07-10 1987-01-21 Hitachi Ltd プラズマ処理装置
US4711698A (en) * 1985-07-15 1987-12-08 Texas Instruments Incorporated Silicon oxide thin film etching process
US4807016A (en) * 1985-07-15 1989-02-21 Texas Instruments Incorporated Dry etch of phosphosilicate glass with selectivity to undoped oxide
JPH0680650B2 (ja) 1986-04-23 1994-10-12 株式会社日立マイコンシステム 半導体集積回路装置の製造方法
JPS62254428A (ja) * 1986-04-28 1987-11-06 Nippon Telegr & Teleph Corp <Ntt> 反応性スパツタエツチング方法と反応性スパツタエツチング装置
DE3717985A1 (de) 1986-05-28 1987-12-03 Minolta Camera Kk Elektrochrome vorrichtung
JPS639120A (ja) * 1986-06-30 1988-01-14 Canon Inc ドライエツチング用ウエハステ−ジ
US4755345A (en) * 1986-08-01 1988-07-05 The United States Of America As Represented By The United States Department Of Energy Impedance matched, high-power, rf antenna for ion cyclotron resonance heating of a plasma
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US4859908A (en) 1986-09-24 1989-08-22 Matsushita Electric Industrial Co., Ltd. Plasma processing apparatus for large area ion irradiation
DE3632340C2 (de) 1986-09-24 1998-01-15 Leybold Ag Induktiv angeregte Ionenquelle
KR900007687B1 (ko) 1986-10-17 1990-10-18 가부시기가이샤 히다찌세이사꾸쇼 플라즈마처리방법 및 장치
US4756810A (en) * 1986-12-04 1988-07-12 Machine Technology, Inc. Deposition and planarizing methods and apparatus
GB8629634D0 (en) 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPS63155728A (ja) 1986-12-19 1988-06-28 Canon Inc プラズマ処理装置
US4793897A (en) * 1987-03-20 1988-12-27 Applied Materials, Inc. Selective thin film etch process
US4786359A (en) * 1987-06-24 1988-11-22 Tegal Corporation Xenon enhanced plasma etch
JPS6415928A (en) 1987-07-10 1989-01-19 Hitachi Ltd Dry etching method
JPH0741153Y2 (ja) * 1987-10-26 1995-09-20 東京応化工業株式会社 試料処理用電極
DE58904540D1 (de) * 1988-03-24 1993-07-08 Siemens Ag Verfahren und vorrichtung zum herstellen von aus amorphen silizium-germanium-legierungen bestehenden halbleiterschichten nach der glimmentladungstechnik, insbesondere fuer solarzellen.
JPH01296600A (ja) * 1988-05-23 1989-11-29 Nissin Electric Co Ltd プラズマ発生源
JPH02148235A (ja) 1988-11-30 1990-06-07 Toshiba Corp データ退避方式
US4918031A (en) * 1988-12-28 1990-04-17 American Telephone And Telegraph Company,At&T Bell Laboratories Processes depending on plasma generation using a helical resonator
US5015330A (en) * 1989-02-28 1991-05-14 Kabushiki Kaisha Toshiba Film forming method and film forming device
US5421891A (en) 1989-06-13 1995-06-06 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5122251A (en) 1989-06-13 1992-06-16 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5032202A (en) 1989-10-03 1991-07-16 Martin Marietta Energy Systems, Inc. Plasma generating apparatus for large area plasma processing
US5210466A (en) 1989-10-03 1993-05-11 Applied Materials, Inc. VHF/UHF reactor system
US5142198A (en) * 1989-12-21 1992-08-25 Applied Science And Technology, Inc. Microwave reactive gas discharge device
DE3942964A1 (de) 1989-12-23 1991-06-27 Leybold Ag Einrichtung fuer die erzeugung eines plasmas
US5203956A (en) * 1990-01-08 1993-04-20 Lsi Logic Corporation Method for performing in-situ etch of a CVD chamber
US5085727A (en) * 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5707486A (en) 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
US5258824A (en) * 1990-08-09 1993-11-02 Applied Materials, Inc. In-situ measurement of a thin film deposited on a wafer
US5169487A (en) * 1990-08-27 1992-12-08 Micron Technology, Inc. Anisotropic etch method
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US5356515A (en) 1990-10-19 1994-10-18 Tokyo Electron Limited Dry etching method
EP0484908A3 (en) 1990-11-08 1993-04-07 Lonza A.G. Microbiological process for the preparation of hydroxylated pyrazinederivatives
EP0489407A3 (en) 1990-12-03 1992-07-22 Applied Materials, Inc. Plasma reactor using uhf/vhf resonant antenna source, and processes
EP0584252B1 (en) * 1991-05-17 1998-03-04 Lam Research Corporation A PROCESS FOR DEPOSITING A SIOx FILM HAVING REDUCED INTRINSIC STRESS AND/OR REDUCED HYDROGEN CONTENT
US6063233A (en) 1991-06-27 2000-05-16 Applied Materials, Inc. Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5392018A (en) * 1991-06-27 1995-02-21 Applied Materials, Inc. Electronically tuned matching networks using adjustable inductance elements and resonant tank circuits
US6036877A (en) 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6095083A (en) * 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
KR100255703B1 (ko) * 1991-06-27 2000-05-01 조셉 제이. 스위니 전자기 rf연결부를 사용하는 플라즈마 처리기 및 방법
US6074512A (en) 1991-06-27 2000-06-13 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5187454A (en) * 1992-01-23 1993-02-16 Applied Materials, Inc. Electronically tuned matching network using predictor-corrector control system
US6090303A (en) * 1991-06-27 2000-07-18 Applied Materials, Inc. Process for etching oxides in an electromagnetically coupled planar plasma apparatus
US6165311A (en) * 1991-06-27 2000-12-26 Applied Materials, Inc. Inductively coupled RF plasma reactor having an overhead solenoidal antenna
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
US6024826A (en) 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
US6077384A (en) * 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5164945A (en) * 1991-07-01 1992-11-17 Laser Centers Of America, Inc. Laser device with intermediate refraction index layer for reduced fresnel losses
KR100297358B1 (ko) 1991-07-23 2001-11-30 히가시 데쓰로 플라즈마에칭장치
US5249251A (en) * 1991-09-16 1993-09-28 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Optical fiber sensor having an active core
US5275683A (en) 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
JP3221025B2 (ja) * 1991-12-19 2001-10-22 ソニー株式会社 プラズマプロセス装置
US5349313A (en) * 1992-01-23 1994-09-20 Applied Materials Inc. Variable RF power splitter
US5423945A (en) * 1992-09-08 1995-06-13 Applied Materials, Inc. Selectivity for etching an oxide over a nitride
DE69226253T2 (de) * 1992-01-24 1998-12-17 Applied Materials, Inc., Santa Clara, Calif. Plasmaätzverfahren und Reaktor zur Plasmabearbeitung
EP0552490A1 (en) * 1992-01-24 1993-07-28 Applied Materials, Inc. Process for etching an oxide layer over a nitride
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
US5286344A (en) 1992-06-15 1994-02-15 Micron Technology, Inc. Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride
US5277751A (en) * 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
JP2625072B2 (ja) * 1992-09-08 1997-06-25 アプライド マテリアルズ インコーポレイテッド 電磁ｒｆ結合を用いたプラズマ反応装置及びその方法
US5346578A (en) 1992-11-04 1994-09-13 Novellus Systems, Inc. Induction plasma source
KR100281345B1 (ko) * 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
JP2581386B2 (ja) * 1992-12-24 1997-02-12 日本電気株式会社 高周波磁場励起処理装置
KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
JP3252518B2 (ja) 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
US5770098A (en) 1993-03-19 1998-06-23 Tokyo Electron Kabushiki Kaisha Etching process
JP3081885B2 (ja) * 1993-03-26 2000-08-28 東京エレクトロン株式会社 プラズマ処理装置
JPH0722322A (ja) * 1993-06-30 1995-01-24 Kokusai Electric Co Ltd プラズマ発生装置
US5614055A (en) 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
JP3172759B2 (ja) * 1993-12-02 2001-06-04 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP3043217B2 (ja) * 1994-02-22 2000-05-22 東京エレクトロン株式会社 プラズマ発生装置
JP3045444B2 (ja) * 1993-10-20 2000-05-29 東京エレクトロン株式会社 プラズマ処理装置およびその制御方法
US5449432A (en) 1993-10-25 1995-09-12 Applied Materials, Inc. Method of treating a workpiece with a plasma and processing reactor having plasma igniter and inductive coupler for semiconductor fabrication
JPH07161702A (ja) * 1993-10-29 1995-06-23 Applied Materials Inc 酸化物のプラズマエッチング方法
US5518547A (en) 1993-12-23 1996-05-21 International Business Machines Corporation Method and apparatus for reducing particulates in a plasma tool through steady state flows
US5414246A (en) * 1993-12-27 1995-05-09 Ford Motor Company Apparatus for scaleless induction heating
US5468341A (en) 1993-12-28 1995-11-21 Nec Corporation Plasma-etching method and apparatus therefor
US5399237A (en) * 1994-01-27 1995-03-21 Applied Materials, Inc. Etching titanium nitride using carbon-fluoride and carbon-oxide gas
JPH07245195A (ja) * 1994-03-07 1995-09-19 Matsushita Electric Ind Co Ltd プラズマ処理方法及び装置
US5435881A (en) * 1994-03-17 1995-07-25 Ogle; John S. Apparatus for producing planar plasma using varying magnetic poles
EP0680072B1 (en) * 1994-04-28 2003-10-08 Applied Materials, Inc. A method of operating a high density plasma CVD reactor with combined inductive and capacitive coupling
US5514246A (en) 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
US5587038A (en) * 1994-06-16 1996-12-24 Princeton University Apparatus and process for producing high density axially extending plasmas
JPH0817799A (ja) * 1994-06-28 1996-01-19 Plasma Syst:Kk プラズマ処理装置
US5540824A (en) * 1994-07-18 1996-07-30 Applied Materials Plasma reactor with multi-section RF coil and isolated conducting lid
JP3410558B2 (ja) * 1994-08-11 2003-05-26 アネルバ株式会社 プラズマ処理装置
JP3140934B2 (ja) * 1994-08-23 2001-03-05 東京エレクトロン株式会社 プラズマ装置
JPH0878191A (ja) * 1994-09-06 1996-03-22 Kobe Steel Ltd プラズマ処理方法及びその装置
US5783101A (en) 1994-09-16 1998-07-21 Applied Materials, Inc. High etch rate residue free metal etch process with low frequency high power inductive coupled plasma
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
ATE181637T1 (de) 1994-10-31 1999-07-15 Applied Materials Inc Plasmareaktoren zur halbleiterscheibenbehandlung
US5607542A (en) 1994-11-01 1997-03-04 Applied Materials Inc. Inductively enhanced reactive ion etching
US5683538A (en) 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
US5688357A (en) 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US5523261A (en) 1995-02-28 1996-06-04 Micron Technology, Inc. Method of cleaning high density inductively coupled plasma chamber using capacitive coupling
US5710486A (en) * 1995-05-08 1998-01-20 Applied Materials, Inc. Inductively and multi-capacitively coupled plasma reactor
EP0756309A1 (en) 1995-07-26 1997-01-29 Applied Materials, Inc. Plasma systems for processing substrates
JPH09180897A (ja) * 1995-12-12 1997-07-11 Applied Materials Inc 高密度プラズマリアクタのためのガス供給装置
US5772771A (en) * 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US6054013A (en) * 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
JPH1079372A (ja) 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JP3220394B2 (ja) 1996-09-27 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置
US5944942A (en) * 1998-03-04 1999-08-31 Ogle; John Seldon Varying multipole plasma source

Also Published As

Publication number Publication date
US6736931B2 (en) 2004-05-18
TW329018B (en) 1998-04-01
US20040163764A1 (en) 2004-08-26
EP0807953A1 (en) 1997-11-19
US6165311A (en) 2000-12-26
US6444085B1 (en) 2002-09-03
JPH1092598A (ja) 1998-04-10
US20020020499A1 (en) 2002-02-21
KR970077318A (ko) 1997-12-12

Similar Documents

Publication Publication Date Title
JP4236294B2 (ja) 上部にソレノイドアンテナを有する電磁結合ｒｆプラズマリアクター
US6238588B1 (en) High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process
KR100853577B1 (ko) 플라즈마 균일성 및 장치 손상 감소를 위해 첨단, 솔레노이드 및 미러 자기장들을 위한 최소 ｄ.ｃ. 코일들을 구비한 플라즈마 반응기
JP4698222B2 (ja) プラズマを径方向に均一に分布する容量結合プラズマリアクタ
US6853141B2 (en) Capacitively coupled plasma reactor with magnetic plasma control
US7955986B2 (en) Capacitively coupled plasma reactor with magnetic plasma control
US6790311B2 (en) Plasma reactor having RF power applicator and a dual-purpose window
US6074512A (en) Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners
US5990017A (en) Plasma reactor with heated source of a polymer-hardening precursor material
US6218312B1 (en) Plasma reactor with heated source of a polymer-hardening precursor material
US6095084A (en) High density plasma process chamber
US20080023443A1 (en) Alternating asymmetrical plasma generation in a process chamber
US6514376B1 (en) Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna
US20240420953A1 (en) Systems and methods for improving mechanical strength of low dielectric constant materials

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040512

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040512

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20070628

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070703

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070912

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071009

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071226

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20071226

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080507

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080711

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20081118

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20081216

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111226

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111226

Year of fee payment: 3

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D02

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111226

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121226

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121226

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131226

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term