JP4230219B2 - 発光半導体チップおよびその製造方法 - Google Patents

発光半導体チップおよびその製造方法 Download PDF

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Publication number
JP4230219B2
JP4230219B2 JP2002518539A JP2002518539A JP4230219B2 JP 4230219 B2 JP4230219 B2 JP 4230219B2 JP 2002518539 A JP2002518539 A JP 2002518539A JP 2002518539 A JP2002518539 A JP 2002518539A JP 4230219 B2 JP4230219 B2 JP 4230219B2
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layer
semiconductor chip
mesa
thin film
active layer
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JP2004506331A5 (enExample
JP2004506331A (ja
Inventor
イレク シュテファン
プレスル アンドレアス
シュトロイベル クラウス
ヴェークライター ヴァルター
ヴィルト ラルフ
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Priority claimed from DE10038671A external-priority patent/DE10038671A1/de
Priority claimed from DE10059532A external-priority patent/DE10059532A1/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2004506331A publication Critical patent/JP2004506331A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
JP2002518539A 2000-08-08 2001-08-08 発光半導体チップおよびその製造方法 Expired - Lifetime JP4230219B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10038671A DE10038671A1 (de) 2000-08-08 2000-08-08 Halbleiterchip für die Optoelektronik
DE10059532A DE10059532A1 (de) 2000-08-08 2000-11-30 Halbleiterchip für die Optoelektronik
PCT/DE2001/003033 WO2002013281A1 (de) 2000-08-08 2001-08-08 Lichtemittierender halbleiterchip und verfahren zu dessen herstellung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007061973A Division JP5215575B2 (ja) 2000-08-08 2007-03-12 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法

Publications (3)

Publication Number Publication Date
JP2004506331A JP2004506331A (ja) 2004-02-26
JP2004506331A5 JP2004506331A5 (enExample) 2007-05-17
JP4230219B2 true JP4230219B2 (ja) 2009-02-25

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JP2002518539A Expired - Lifetime JP4230219B2 (ja) 2000-08-08 2001-08-08 発光半導体チップおよびその製造方法
JP2007061973A Expired - Lifetime JP5215575B2 (ja) 2000-08-08 2007-03-12 オプトエレクトロニクス半導体チップおよびオプトエレクトロニクス半導体チップの製造方法

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Country Status (6)

Country Link
US (4) US20020017652A1 (enExample)
EP (1) EP1307928B1 (enExample)
JP (2) JP4230219B2 (enExample)
CN (1) CN100565942C (enExample)
TW (1) TW516246B (enExample)
WO (1) WO2002013281A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354685B2 (en) 2010-02-18 2013-01-15 Stanley Electric Co., Ltd. Semiconductor light emitting device
US8653552B2 (en) 2012-02-24 2014-02-18 Stanley Electric Co., Ltd. Semiconductor light-emitting device
US8698176B2 (en) 2010-07-12 2014-04-15 Lg Innotek Co., Ltd. Light emitting device and lighting system
US8981409B2 (en) 2012-08-03 2015-03-17 Stanley Electric Co., Ltd. Semiconductor light emitting device

Families Citing this family (171)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
US6946788B2 (en) 2001-05-29 2005-09-20 Toyoda Gosei Co., Ltd. Light-emitting element
WO2003026355A2 (de) * 2001-08-30 2003-03-27 Osram Opto Semiconductors Gmbh Elektrolumineszierender körper
DE10148227B4 (de) * 2001-09-28 2015-03-05 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip, Verfahren zu dessen Herstellung und strahlungsemittierendes Bauelement
EP2105977B1 (en) * 2002-01-28 2014-06-25 Nichia Corporation Nitride semiconductor element with supporting substrate and method for producing nitride semiconductor element
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
DE10234977A1 (de) * 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
CN100358163C (zh) 2002-08-01 2007-12-26 日亚化学工业株式会社 半导体发光元件及其制造方法、使用此的发光装置
DE10307280B4 (de) * 2002-11-29 2005-09-01 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines lichtemittierenden Halbleiterbauelements
US6929966B2 (en) * 2002-11-29 2005-08-16 Osram Opto Semiconductors Gmbh Method for producing a light-emitting semiconductor component
DE10261364B4 (de) * 2002-12-30 2004-12-16 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer temperbarer Mehrschichtkontaktbeschichtung, insbesondere einer temperbaren Mehrschichtkontaktmetallisierung
DE10308322B4 (de) * 2003-01-31 2014-11-06 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Kontaktbereiches auf einer Halbleiterschicht und Bauelement mit derartigem Kontaktbereich
AU2004214891B2 (en) 2003-02-26 2010-01-07 Complete Genomics, Inc. Random array DNA analysis by hybridization
DE10308866A1 (de) * 2003-02-28 2004-09-09 Osram Opto Semiconductors Gmbh Beleuchtungsmodul und Verfahren zu dessen Herstellung
US8063557B2 (en) * 2003-07-04 2011-11-22 Epistar Corporation Light-emitting device having wavelength-converting materials therewithin
TWI330413B (en) 2005-01-25 2010-09-11 Epistar Corp A light-emitting device
US8604497B2 (en) * 2003-09-26 2013-12-10 Osram Opto Semiconductors Gmbh Radiation-emitting thin-film semiconductor chip
DE102004016697B4 (de) * 2004-02-27 2007-10-11 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Halbleiterchips umfassend ein Verbindungsverfahren, das Löten mit einem Lot umfasst, und Halbleiterchip
TWI244221B (en) * 2004-03-01 2005-11-21 Epistar Corp Micro-reflector containing flip-chip light emitting device
JP4868709B2 (ja) * 2004-03-09 2012-02-01 三洋電機株式会社 発光素子
US7064356B2 (en) 2004-04-16 2006-06-20 Gelcore, Llc Flip chip light emitting diode with micromesas and a conductive mesh
DE102004021175B4 (de) * 2004-04-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchips für die Optoelektronik und Verfahren zu deren Herstellung
DE102004040277B4 (de) * 2004-06-30 2015-07-30 Osram Opto Semiconductors Gmbh Reflektierendes Schichtsystem mit einer Mehrzahl von Schichten zur Aufbringung auf ein III/V-Verbindungshalbleitermaterial
JP5305655B2 (ja) * 2004-07-30 2013-10-02 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 薄膜技術による半導体チップの製造方法および薄膜半導体チップ
US8728937B2 (en) * 2004-07-30 2014-05-20 Osram Opto Semiconductors Gmbh Method for producing semiconductor chips using thin film technology
TWI442456B (zh) * 2004-08-31 2014-06-21 Sophia School Corp 發光元件
DE102004046792B4 (de) * 2004-09-27 2023-01-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Dünnfilmchip mit integrierter Linse und Verfahren zu seiner Herstellung
US7352006B2 (en) * 2004-09-28 2008-04-01 Goldeneye, Inc. Light emitting diodes exhibiting both high reflectivity and high light extraction
DE102004061865A1 (de) * 2004-09-29 2006-03-30 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Dünnfilmhalbleiterchips
US20060104061A1 (en) * 2004-11-16 2006-05-18 Scott Lerner Display with planar light source
DE102006002275A1 (de) 2005-01-19 2006-07-20 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
JP2006235415A (ja) * 2005-02-28 2006-09-07 Hitachi Displays Ltd レンズアレイおよびそれを利用した表示装置
US20060237735A1 (en) * 2005-04-22 2006-10-26 Jean-Yves Naulin High-efficiency light extraction structures and methods for solid-state lighting
KR100597166B1 (ko) * 2005-05-03 2006-07-04 삼성전기주식회사 플립 칩 발광다이오드 및 그 제조방법
EP2410582B1 (en) * 2005-05-24 2019-09-04 LG Electronics Inc. Nano rod type light emitting diode and method for fabricating a nano rod type light emitting diode
DE102005033005A1 (de) 2005-07-14 2007-01-18 Osram Opto Semiconductors Gmbh Optoelektronischer Chip
DE102005035722B9 (de) 2005-07-29 2021-11-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
DE102005062514A1 (de) 2005-09-28 2007-03-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102005061346A1 (de) * 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102005047149A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, damit hergestelltes Bauelement sowie entsprechende Herstellverfahren
DE102005047152A1 (de) * 2005-09-30 2007-04-12 Osram Opto Semiconductors Gmbh Epitaxiesubstrat, Verfahren zu seiner Herstellung und Verfahren zur Herstellung eines Halbleiterchips
DE102005046942A1 (de) 2005-09-30 2007-04-05 Osram Opto Semiconductors Gmbh Verfahren zur Verbindung von Schichten, entsprechendes Bauelement und organische Leuchtdiode
JP2007103725A (ja) * 2005-10-05 2007-04-19 Toshiba Corp 半導体発光装置
KR101316415B1 (ko) * 2005-10-17 2013-10-08 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
JP4857733B2 (ja) * 2005-11-25 2012-01-18 パナソニック電工株式会社 半導体発光素子およびその製造方法
KR100714123B1 (ko) * 2005-12-08 2007-05-02 한국전자통신연구원 실리콘 발광소자
DE102006033894B4 (de) * 2005-12-16 2019-05-09 Osram Gmbh Beleuchtungseinrichtung und Anzeigegerät mit einer Beleuchtungseinrichtung
DE102006033893B4 (de) 2005-12-16 2017-02-23 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
JP2007173579A (ja) * 2005-12-22 2007-07-05 Matsushita Electric Works Ltd 半導体発光素子およびその製造方法
US20080128734A1 (en) * 2006-01-06 2008-06-05 Epistar Corporation Light-emitting device
US20100084679A1 (en) * 2006-01-06 2010-04-08 Epistar Corporation Light-emitting device
KR20070088145A (ko) * 2006-02-24 2007-08-29 엘지전자 주식회사 발광 다이오드 및 그 제조방법
DE102006031076A1 (de) * 2006-03-17 2007-09-20 Osram Opto Semiconductors Gmbh Optisches Projektionsgerät
DE102006024220A1 (de) * 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102006061167A1 (de) 2006-04-25 2007-12-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
DE102006034847A1 (de) * 2006-04-27 2007-10-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102006028692B4 (de) * 2006-05-19 2021-09-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Elektrisch leitende Verbindung mit isolierendem Verbindungsmedium
US20070291494A1 (en) * 2006-06-20 2007-12-20 Galli Robert D Led reflector assembly for improving the color rendering index of the light output
US20080030974A1 (en) * 2006-08-02 2008-02-07 Abu-Ageel Nayef M LED-Based Illumination System
KR100809236B1 (ko) * 2006-08-30 2008-03-05 삼성전기주식회사 편광 발광 다이오드
DE102007004302A1 (de) 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zur Herstellung eines Halbleiterchips
KR100887139B1 (ko) * 2007-02-12 2009-03-04 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
DE102007008524A1 (de) * 2007-02-21 2008-08-28 Osram Opto Semiconductors Gmbh Strahlung emittierender Chip mit mindestens einem Halbleiterkörper
JP4896788B2 (ja) * 2007-03-28 2012-03-14 富士通株式会社 半導体発光素子およびその製造方法
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US20080303033A1 (en) * 2007-06-05 2008-12-11 Cree, Inc. Formation of nitride-based optoelectronic and electronic device structures on lattice-matched substrates
JP5123573B2 (ja) * 2007-06-13 2013-01-23 ローム株式会社 半導体発光素子およびその製造方法
KR100872717B1 (ko) 2007-06-22 2008-12-05 엘지이노텍 주식회사 발광 소자 및 그 제조방법
DE102007029369A1 (de) 2007-06-26 2009-01-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102007029391A1 (de) 2007-06-26 2009-01-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102007039291A1 (de) 2007-08-20 2009-02-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
US20090050905A1 (en) * 2007-08-20 2009-02-26 Abu-Ageel Nayef M Highly Efficient Light-Emitting Diode
DE102008005344A1 (de) 2007-09-21 2009-04-02 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement
DE102007046027A1 (de) 2007-09-26 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur
DE102007057756B4 (de) 2007-11-30 2022-03-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
DE102007057672A1 (de) 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
DE102007061140A1 (de) 2007-12-19 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit Kühlelement
DE102008008599A1 (de) 2007-12-20 2009-06-25 Osram Opto Semiconductors Gmbh Halbleiteranordnung, insbesondere Leuchtdiodenanordnung und Leuchtmittelanordnung
DE102007062046B4 (de) 2007-12-21 2023-09-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lichtemittierende Bauelementeanordnung, lichtemittierendes Bauelement sowie Verfahren zum Herstellen einer Mehrzahl von lichtemittierenden Bauelementen
DE102008019902A1 (de) * 2007-12-21 2009-06-25 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Herstellungsverfahren für ein optoelektronisches Bauelement
US20090166654A1 (en) * 2007-12-31 2009-07-02 Zhiyin Gan Light-emitting diode with increased light efficiency
DE102008003182A1 (de) 2008-01-04 2009-07-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102008005497A1 (de) 2008-01-22 2009-07-23 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements und eines Wafers
DE102008012407A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008006988A1 (de) * 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP5992662B2 (ja) 2008-02-29 2016-09-14 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ モノリシックなオプトエレクトロニクス半導体ボディおよびその製造方法
DE102008016525A1 (de) 2008-03-31 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008011848A1 (de) 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008011866B4 (de) 2008-02-29 2018-05-03 Osram Opto Semiconductors Gmbh Lichtquellenanordnung mit einer Halbleiterlichtquelle
DE102008032318A1 (de) * 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
DE102008038857A1 (de) 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung
DE102008033705A1 (de) 2008-04-07 2009-10-08 Osram Opto Semiconductors Gmbh Optoelektronische Projektionsvorrichtung
DE102009018603B9 (de) 2008-04-25 2021-01-14 Samsung Electronics Co., Ltd. Leuchtvorrichtung und Herstellungsverfahren derselben
DE102008024485A1 (de) 2008-05-21 2009-11-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102008038852B4 (de) 2008-06-03 2024-02-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
DE102008050538B4 (de) * 2008-06-06 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
KR101506264B1 (ko) * 2008-06-13 2015-03-30 삼성전자주식회사 발광 소자, 발광 장치 및 상기 발광 소자의 제조 방법
DE102008030584A1 (de) 2008-06-27 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
DE102008030751A1 (de) 2008-06-27 2009-12-31 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterchip
KR101478334B1 (ko) * 2008-06-30 2015-01-02 서울바이오시스 주식회사 발광 다이오드 및 그 제조방법
US8236582B2 (en) * 2008-07-24 2012-08-07 Philips Lumileds Lighting Company, Llc Controlling edge emission in package-free LED die
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
DE102008035255B4 (de) 2008-07-29 2021-10-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102008064956B3 (de) 2008-07-29 2023-08-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements
DE102008035254A1 (de) 2008-07-29 2010-02-11 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und optoelektronisches Bauteil
DE102008038750A1 (de) 2008-08-12 2010-02-18 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102008039790B4 (de) 2008-08-26 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102008045653B4 (de) * 2008-09-03 2020-03-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
US7741134B2 (en) * 2008-09-15 2010-06-22 Bridgelux, Inc. Inverted LED structure with improved light extraction
DE102008049398A1 (de) 2008-09-29 2010-04-01 Osram Opto Semiconductors Gmbh Scheinwerfer mit einer Mehrzahl von Lumineszenzdiodenemittern
DE102008050573A1 (de) * 2008-10-06 2010-04-08 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements und optoelektronisches Halbleiterbauelement
DE102008051048A1 (de) 2008-10-09 2010-04-15 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
DE102008057350A1 (de) 2008-11-14 2010-05-20 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
JP2010134217A (ja) * 2008-12-05 2010-06-17 Sony Corp カラーフィルタおよびその製造方法並びに発光装置
KR101014045B1 (ko) * 2009-02-18 2011-02-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
TWI404233B (zh) * 2009-03-31 2013-08-01 Epistar Corp 光電元件及其製造方法
KR101527261B1 (ko) 2009-04-03 2015-06-08 오스람 옵토 세미컨덕터스 게엠베하 광전 소자의 제조 방법, 광전 소자, 및 복수 개의 광전 소자를 포함하는 소자 장치
JP2011029612A (ja) * 2009-06-24 2011-02-10 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2013501357A (ja) 2009-07-30 2013-01-10 スリーエム イノベイティブ プロパティズ カンパニー ピクセル化されたｌｅｄ
KR101007077B1 (ko) * 2009-11-06 2011-01-10 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 그 제조방법
DE102009054555A1 (de) 2009-12-11 2011-06-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zum Herstellen eines optoelektronischen Halbleiterchips
DE102009054784A1 (de) 2009-12-16 2011-06-22 Osram Gesellschaft mit beschränkter Haftung, 81543 Halbleiterchip und Verfahren zum Herstellen eines Halbleiterchips
KR101106151B1 (ko) * 2009-12-31 2012-01-20 서울옵토디바이스주식회사 발광 소자 및 그것을 제조하는 방법
US8283676B2 (en) * 2010-01-21 2012-10-09 Siphoton Inc. Manufacturing process for solid state lighting device on a conductive substrate
DE102010002204A1 (de) 2010-02-22 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Halbleiterdiode und Verfahren zum Herstellen einer Halbleiterdiode
KR101014155B1 (ko) 2010-03-10 2011-02-10 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
DE102010003112A1 (de) 2010-03-22 2011-09-22 Osram Opto Semiconductors Gmbh Verfahren zur Kontrolle einer zwischen einer Metallschicht und einer Halbleiterschicht ausgebildeten Grenzfläche
DE102010014667A1 (de) 2010-04-12 2011-10-13 Osram Opto Semiconductors Gmbh Leuchtdiodenchip mit Stromaufweitungsschicht
JP2011233783A (ja) * 2010-04-28 2011-11-17 Mitsubishi Heavy Ind Ltd 半導体発光素子、半導体発光素子の保護膜及びその作製方法
US8154042B2 (en) * 2010-04-29 2012-04-10 Koninklijke Philips Electronics N V Light emitting device with trenches and a top contact
DE102010027679A1 (de) 2010-07-20 2012-01-26 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US8598614B2 (en) 2010-08-30 2013-12-03 Epistar Corporation Light-emitting devices
TW201216508A (en) * 2010-10-06 2012-04-16 Chi Mei Lighting Tech Corp Light-emitting diode device and manufacturing method thereof
DE102010054068A1 (de) 2010-12-10 2012-06-14 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und Bauelement
TWI435481B (zh) * 2011-02-18 2014-04-21 Genesis Photonics Inc Light emitting diode device
DE102011012262A1 (de) 2011-02-24 2012-08-30 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102011012264A1 (de) 2011-02-24 2012-08-30 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP2012044232A (ja) * 2011-12-02 2012-03-01 Toshiba Corp 半導体発光装置
JP5806608B2 (ja) * 2011-12-12 2015-11-10 株式会社東芝 半導体発光装置
DE102012103159A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Strahlung emittierendes Bauelement, transparentes Material und Füllstoffpartikel sowie deren Herstellungsverfahren
DE102012104363A1 (de) 2012-05-21 2013-11-21 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102012106812A1 (de) 2012-07-26 2014-01-30 Osram Opto Semiconductors Gmbh Verfahren zum Vergießen von optoelektronischen Bauelementen
KR101997243B1 (ko) 2012-09-13 2019-07-08 엘지이노텍 주식회사 발광 소자 및 조명 시스템
JP5462333B1 (ja) 2012-09-21 2014-04-02 株式会社東芝 半導体発光素子及びその製造方法
KR102037865B1 (ko) 2013-02-01 2019-10-30 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자 제조방법
US9178109B2 (en) 2013-02-17 2015-11-03 Tien Yang Wang Semiconductor light-emitting device and method of manufacturing the same
JP2014042062A (ja) * 2013-10-31 2014-03-06 Future Light Limited Liability Company 発光素子
US9768345B2 (en) 2013-12-20 2017-09-19 Apple Inc. LED with current injection confinement trench
DE102014114194B4 (de) * 2014-09-30 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
CN107210337B (zh) * 2014-11-06 2021-06-29 亮锐控股有限公司 具有顶部接触件下方的沟槽的发光器件
US9870927B2 (en) * 2015-04-02 2018-01-16 Microsoft Technology Licensing, Llc Free-edge semiconductor chip bending
KR102554702B1 (ko) * 2015-08-25 2023-07-13 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 및 이를 포함하는 발광소자 패키지
CN108027448B (zh) * 2015-10-09 2022-02-11 深圳帧观德芯科技有限公司 半导体x射线检测器的封装方法
DE102015117662B4 (de) * 2015-10-16 2021-07-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
CN105720140A (zh) * 2016-03-03 2016-06-29 映瑞光电科技(上海)有限公司 GaN基LED垂直芯片结构及制备方法
CN105870264A (zh) * 2016-03-03 2016-08-17 映瑞光电科技(上海)有限公司 具有倒金字塔型侧壁的GaN基LED垂直芯片结构及制备方法
JP7083230B2 (ja) * 2016-05-10 2022-06-10 ローム株式会社 半導体発光素子
DE102016115907A1 (de) 2016-08-26 2018-03-01 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN106299084B (zh) * 2016-08-30 2018-10-16 开发晶照明（厦门）有限公司 Led封装结构
CN109037263A (zh) * 2017-06-09 2018-12-18 美商晶典有限公司 具有透光基材的微发光二极管显示模块及其制造方法
JP7079106B2 (ja) 2018-01-24 2022-06-01 シャープ株式会社 画像表示素子、及び画像表示素子の製造方法
US20230155057A1 (en) 2020-04-08 2023-05-18 Ams-Osram International Gmbh Semiconductor Component and Process for Manufacturing a Semiconductor Component
WO2021245756A1 (ja) * 2020-06-01 2021-12-09 株式会社京都セミコンダクター 端面入射型半導体受光素子
DE102020114884A1 (de) 2020-06-04 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements
WO2021251524A1 (ko) * 2020-06-11 2021-12-16 엘지전자 주식회사 반도체 발광소자 및 이를 이용한 디스플레이 장치
DE102020116871A1 (de) 2020-06-26 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip
DE102020125056A1 (de) 2020-09-25 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements
CN112864293A (zh) * 2021-02-24 2021-05-28 江苏大学 一种垂直结构深紫外led芯片及其制造方法
CN119560488A (zh) * 2023-08-31 2025-03-04 京东方科技集团股份有限公司 发光基板及其制作方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1589099C3 (de) 1967-09-09 1975-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Leuchtanordnung
JPS5310840B2 (enExample) * 1972-05-04 1978-04-17
US4039890A (en) * 1974-08-16 1977-08-02 Monsanto Company Integrated semiconductor light-emitting display array
JPS52124885A (en) * 1976-04-12 1977-10-20 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
DE2926803A1 (de) 1979-07-03 1981-02-12 Licentia Gmbh Elektrolumineszenz-anordnung
NZ201460A (en) * 1981-08-17 1986-11-12 Allware Agencies Ltd Multipurpose microprocessor controlled heating and cooling fan
JPS5892751U (ja) * 1981-12-17 1983-06-23 三洋電機株式会社 発光ダイオ−ド素子
JPS61183986A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体発光装置の製造方法
JPH0752779B2 (ja) * 1987-12-09 1995-06-05 日立電線株式会社 発光ダイオードアレイ
US5087949A (en) * 1989-06-27 1992-02-11 Hewlett-Packard Company Light-emitting diode with diagonal faces
US5008718A (en) * 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
JPH0463478A (ja) * 1990-07-03 1992-02-28 Sanyo Electric Co Ltd ＳｉＣ発光装置
JP3149030B2 (ja) * 1991-06-13 2001-03-26 富士通株式会社 半導体量子箱装置及びその製造方法
US5309001A (en) * 1991-11-25 1994-05-03 Sharp Kabushiki Kaisha Light-emitting diode having a surface electrode of a tree-like form
JPH05327012A (ja) * 1992-05-15 1993-12-10 Sanyo Electric Co Ltd 炭化ケイ素発光ダイオード
JPH06151955A (ja) * 1992-10-29 1994-05-31 Victor Co Of Japan Ltd 半導体発光素子
JPH06318731A (ja) * 1993-03-12 1994-11-15 Sharp Corp 半導体発光装置
US5376580A (en) * 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5385632A (en) * 1993-06-25 1995-01-31 At&T Laboratories Method for manufacturing integrated semiconductor devices
JP3158869B2 (ja) * 1993-06-30 2001-04-23 日立電線株式会社 発光ダイオード及びその製造方法
TW253999B (enExample) * 1993-06-30 1995-08-11 Hitachi Cable
US5621225A (en) * 1996-01-18 1997-04-15 Motorola Light emitting diode display package
GB9603052D0 (en) * 1996-02-14 1996-04-10 Philips Electronics Nv Image sensor
US6229160B1 (en) 1997-06-03 2001-05-08 Lumileds Lighting, U.S., Llc Light extraction from a semiconductor light-emitting device via chip shaping
EP0905797B1 (de) 1997-09-29 2010-02-10 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle und Verfahren zu ihrer Herstellung
US6091085A (en) * 1998-02-19 2000-07-18 Agilent Technologies, Inc. GaN LEDs with improved output coupling efficiency
EP0977063A1 (en) * 1998-07-28 2000-02-02 Interuniversitair Micro-Elektronica Centrum Vzw A socket and a system for optoelectronic interconnection and a method of fabricating such socket and system
DE19911717A1 (de) * 1999-03-16 2000-09-28 Osram Opto Semiconductors Gmbh Monolithisches elektrolumineszierendes Bauelement und Verfahren zu dessen Herstellung
US6410942B1 (en) 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6486499B1 (en) * 1999-12-22 2002-11-26 Lumileds Lighting U.S., Llc III-nitride light-emitting device with increased light generating capability
US20020017652A1 (en) * 2000-08-08 2002-02-14 Stefan Illek Semiconductor chip for optoelectronics
WO2002031865A1 (en) * 2000-10-13 2002-04-18 Emcore Corporation Method of making an electrode
US6455878B1 (en) * 2001-05-15 2002-09-24 Lumileds Lighting U.S., Llc Semiconductor LED flip-chip having low refractive index underfill

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8354685B2 (en) 2010-02-18 2013-01-15 Stanley Electric Co., Ltd. Semiconductor light emitting device
US8698176B2 (en) 2010-07-12 2014-04-15 Lg Innotek Co., Ltd. Light emitting device and lighting system
US9159894B2 (en) 2010-07-12 2015-10-13 Lg Innotek Co., Ltd. Light emitting device and lighting system
US9252345B2 (en) 2010-07-12 2016-02-02 Lg Innotek Co., Ltd. Light emitting device and lighting system
US8653552B2 (en) 2012-02-24 2014-02-18 Stanley Electric Co., Ltd. Semiconductor light-emitting device
US8981409B2 (en) 2012-08-03 2015-03-17 Stanley Electric Co., Ltd. Semiconductor light emitting device

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