JP3948292B2 - 半導体記憶装置及びその製造方法 - Google Patents

半導体記憶装置及びその製造方法 Download PDF

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Publication number
JP3948292B2
JP3948292B2 JP2002024918A JP2002024918A JP3948292B2 JP 3948292 B2 JP3948292 B2 JP 3948292B2 JP 2002024918 A JP2002024918 A JP 2002024918A JP 2002024918 A JP2002024918 A JP 2002024918A JP 3948292 B2 JP3948292 B2 JP 3948292B2
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film
forming
memory device
semiconductor memory
wiring
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Japanese (ja)
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JP2003229537A5 (enExample
JP2003229537A (ja
Inventor
秀行 松岡
清男 伊藤
元康 寺尾
悟 半澤
健 阪田
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2002024918A priority Critical patent/JP3948292B2/ja
Priority to US10/307,373 priority patent/US6740921B2/en
Publication of JP2003229537A publication Critical patent/JP2003229537A/ja
Priority to US10/808,510 priority patent/US6946704B2/en
Priority to US10/876,461 priority patent/US7078273B2/en
Publication of JP2003229537A5 publication Critical patent/JP2003229537A5/ja
Priority to US11/368,603 priority patent/US7341892B2/en
Application granted granted Critical
Publication of JP3948292B2 publication Critical patent/JP3948292B2/ja
Priority to US12/007,851 priority patent/US20080121860A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/34—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the vertical channel field-effect transistor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Semiconductor Memories (AREA)
JP2002024918A 2002-02-01 2002-02-01 半導体記憶装置及びその製造方法 Expired - Fee Related JP3948292B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2002024918A JP3948292B2 (ja) 2002-02-01 2002-02-01 半導体記憶装置及びその製造方法
US10/307,373 US6740921B2 (en) 2002-02-01 2002-12-02 Semiconductor memory cell and method of forming same
US10/808,510 US6946704B2 (en) 2002-02-01 2004-03-25 Semiconductor memory cell and method of forming same
US10/876,461 US7078273B2 (en) 2002-02-01 2004-06-28 Semiconductor memory cell and method of forming same
US11/368,603 US7341892B2 (en) 2002-02-01 2006-03-07 Semiconductor memory cell and method of forming same
US12/007,851 US20080121860A1 (en) 2002-02-01 2008-01-16 Semiconductor memory cell and method of forming same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002024918A JP3948292B2 (ja) 2002-02-01 2002-02-01 半導体記憶装置及びその製造方法

Related Child Applications (1)

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JP2006287115A Division JP2007019559A (ja) 2006-10-23 2006-10-23 半導体記憶装置及びその製造方法

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JP2003229537A JP2003229537A (ja) 2003-08-15
JP2003229537A5 JP2003229537A5 (enExample) 2005-04-28
JP3948292B2 true JP3948292B2 (ja) 2007-07-25

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US (5) US6740921B2 (enExample)
JP (1) JP3948292B2 (enExample)

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