JP4268607B2 - 半導体装置に配設される中継部材及び半導体装置 - Google Patents
半導体装置に配設される中継部材及び半導体装置 Download PDFInfo
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- JP4268607B2 JP4268607B2 JP2005287538A JP2005287538A JP4268607B2 JP 4268607 B2 JP4268607 B2 JP 4268607B2 JP 2005287538 A JP2005287538 A JP 2005287538A JP 2005287538 A JP2005287538 A JP 2005287538A JP 4268607 B2 JP4268607 B2 JP 4268607B2
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- bonding pad
- wiring
- bonding
- relay member
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 273
- 239000000463 material Substances 0.000 claims description 25
- 239000000853 adhesive Substances 0.000 description 27
- 230000004048 modification Effects 0.000 description 23
- 238000012986 modification Methods 0.000 description 23
- 239000000758 substrate Substances 0.000 description 21
- 230000001070 adhesive effect Effects 0.000 description 20
- 229920005989 resin Polymers 0.000 description 16
- 239000011347 resin Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 238000007747 plating Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000007789 sealing Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 239000004593 Epoxy Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- -1 Na + Chemical class 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/5382—Adaptable interconnections, e.g. for engineering changes
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Description
更に、上述の例のほか、中継部材を半導体チップと略同一面上に並べて搭載し、両者をワイヤボンディングしている構造(特許文献1及び2参照)、半導体チップよりも小さい中継部材を当該半導体チップの上に搭載している構造(特許文献3及び4参照)、中継部材を半導体チップの下に配設している構造(特許文献5参照)、積層された複数の半導体チップのうち、上にある半導体チップと中継部材とが並べられて配置されている構造(特許文献6参照)、或いは積層された複数の半導体チップの間に中継部材を配設している構造(特許文献7及び8参照)を備えた半導体装置が知られている。
当該中継部材は、当該中継部材が配設される前記半導体装置に配設される半導体素子と同一の材料からなり、当該中継部材は、第1の端子と、当該中継部材の主面上の同一層に形成された単一の配線によって前記第1の端子と接続している複数の第2の端子とを備え、前記配線は、前記第1の端子と前記第2の端子との間において分岐点を有し、前記配線は、前記分岐点において分岐し、前記第2の端子の夫々に接続していることを特徴とする中継部材が提供される。
本発明に於ける中継部材は、半導体装置内に配設され、一つの半導体チップ(半導体素子)と、他の半導体チップ、配線基板、又はリードフレームとの間を相互に接続するボンディングワイヤ等による配線を中継する部材である。
当該ボンディングパッド52B’へは、ボンディングワイヤ54は接続されない。
次に、半導体装置における、上述の構造を備えた中継部材の搭載構成について説明する。図30は、本発明の実施形態に係る中継部材を備えた半導体装置の第1の例を示す図であり、当該半導体装置の断面図である。
(付記1) 半導体装置に配設される中継部材であって、
当該中継部材は、第1の端子と、配線によって前記第1の端子と接続している複数の第2の端子とを備え、
前記第1の端子に接続している前記配線は、途中で分岐して、前記第2の端子の夫々に接続していることを特徴とする中継部材。
(付記2) 半導体装置に配設される中継部材であって、
当該中継部材は、第1の端子と第2の端子とを備え、
前記第1の端子に接続される第1端子用配線の端部及び前記第2の端子に接続される第2端子用配線の端部のうち少なくとも1つにより連結部が形成され、
少なくとも前記連結部に接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続されることを特徴とする中継部材。
(付記3) 前記接続部材は、前記連結部と、前記第1の端子又は前記第2の端子とを接続することを特徴とする付記2記載の中継部材。
(付記4) 前記第1端子用配線の前記端部と前記第2端子用配線の前記端部との間に接続配線が形成され、
前記接続配線の一の端部と前記第1端子用配線の前記端部との間及び前記接続配線の他の端部と前記第2端子用配線の前記端部との間に前記接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続されることを特徴とする付記2又は3記載の中継部材。
(付記5) 前記第1端子用配線の前記端部と前記第2端子用配線の前記端部により前記連結部が形成され、
前記接続部材は、スタッドバンプを含むことを特徴とする付記2又は4記載の中継部材。
(付記6) 前記スタッドバンプは、第1乃至第3のスタッドバンプから成り、
前記第1のスタッドバンプは前記第1端子用配線の前記端部に形成され、
前記第2のスタッドバンプは前記第2端子用配線の前記端部に形成され、
前記第3のスタッドバンプは前記第1のスタッドバンプ及び前記第2のスタッドバンプ上に重ねてボンディング形成されることを特徴とする付記5記載の中継部材。
(付記7) 前記第1端子用配線の前記端部と前記第2端子用配線の前記端部により前記連結部が形成され、
前記接続部材は、導電性樹脂を含むことを特徴とする付記2又は4記載の中継部材。
(付記8) 前記接続部材は、ボンディングワイヤを含むことを特徴とする付記2乃至4いずれか一項記載の中継部材。
(付記9) 前記第1の端子又は前記第2の端子にスタッドバンプを形成し、
前記スタッドバンプの上に前記ボンディングワイヤの端部を形成し、
前記ボンディングワイヤの前記端部の上に、前記第1の端子又は前記第2の端子と前記半導体装置の他の構成要素とを接続するボンディングワイヤが形成されることを特徴とする付記8記載の中継部材。
(付記10) 当該中継部材の材料は、当該中継部材が形成される前記半導体装置に形成される半導体素子と同一の材料から成ることを特徴とする付記1乃至9いずれか一項記載の中継部材。
(付記11) 前記第1端子用配線又は前記第2端子用配線の上に絶縁膜が形成され、
前記第1端子用配線又は前記第2端子用配線の端部の上に形成されている絶縁膜の一部が開口して開口部を形成し、
当該開口部に、前記絶縁膜よりも高くなるように金属めっき層が形成されていることを特徴とする付記2乃至10いずれか一項記載の中継部材。
(付記12) 少なくとも1つの半導体素子と、配線基板又はリードフレームと、を備えた半導体装置であって、
前記半導体素子と前記配線基板又は前記リードフレームとは中継部材を介して接続され、
前記中継部材は、第1の端子と、第2の端子とを備え、
前記第1の端子に接続される第1端子用配線の端部及び前記第2の端子に接続される第2端子用配線の端部のうち少なくとも1つにより連結部が形成され、
少なくとも前記連結部に接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続されることを特徴とする半導体装置。
(付記13) 前記接続部材は、前記連結部と、前記第1の端子又は前記第2の端子とを接続することを特徴とする付記12記載の中継部材。
(付記14) 前記第1端子用配線の前記端部と前記第2端子用配線の前記端部との間に接続配線が形成され、
前記接続配線の一の端部と前記第1端子用配線の前記端部及び前記接続配線の他の端部と前記第2端子用配線の前記端部との間に前記接続部材が形成されることにより、前記第1の端子と前記第2の端子が接続されることを特徴とする付記12又は13記載の半導体装置。
(付記15) 前記第1端子用配線の前記端部と前記第2端子用配線の前記端部により前記連結部が形成され、
前記接続部材は、スタッドバンプを含むことを特徴とする付記12又は14記載の半導体装置。
(付記16) 前記スタッドバンプは、第1乃至第3のスタッドバンプから成り、
前記第1のスタッドバンプは前記第1端子用配線の前記端部に形成され、
前記第2のスタッドバンプは前記第2端子用配線の前記端部に形成され、
前記第3のスタッドバンプは前記第1のスタッドバンプ及び前記第2のスタッドバンプ上に重ねてボンディング形成されることを特徴とする付記15記載の中継部材。
(付記17) 前記第1端子用配線の前記端部と前記第2端子用配線の前記端部により前記連結部が形成され、
前記接続部材は、導電性樹脂を含むことを特徴とする付記12又は14記載の半導体装置。
(付記18) 前記接続部材は、ボンディングワイヤを含むことを特徴とする付記12乃至14いずれか一項記載の半導体装置。
(付記19) 前記第1の端子又は前記第2の端子にスタッドバンプを形成し、
前記スタッドバンプの上に前記ボンディングワイヤの端部を形成し、
前記ボンディングワイヤの上に、前記第1の端子又は前記第2の端子と前記配線基板又は前記リードフレームとを接続するボンディングワイヤが形成されることを特徴とする付記18記載の中継部材。
(付記20) 前記第1の端子及び前記第2の端子は複数形成されており、
前記第1の端子の配列方向と前記第2の端子の配列方向は略平行であり、
前記第1の端子の配列順序と、前記第1の端子に対応する前記第2の端子の配列順序が異なることを特徴とする付記12乃至19いずれか一項記載の半導体装置。
6、8 半導体チップ
10 接着剤
50、500、600、700、750、710、720 中継部材
51 第1のボンディングパッド
52 第2のボンディングパッド
55、56、57、58、70、80、90、100、150、525、535 配線
60、110、115、120、125、510、530、540 連結部
61、115、155、615 ボンディングワイヤ
130 スタッドバンプ
900、910、920、930、940、950、960、970 半導体装置
557 インナーリード部
Claims (2)
- 半導体装置に半導体素子と別個に配設される板状形状を有する中継部材であって、
当該中継部材は、当該中継部材が配設される前記半導体装置に配設される半導体素子と同一の材料からなり、
当該中継部材は、第1の端子と、当該中継部材の主面上の同一層に形成された単一の配線によって前記第1の端子と接続している複数の第2の端子とを備え、
前記配線は、前記第1の端子と前記第2の端子との間において分岐点を有し、
前記配線は、前記分岐点において分岐し、前記第2の端子の夫々に接続していることを特徴とする中継部材。 - 複数の半導体素子と、
前記半導体素子と配線基板とを接続する中継部材と、を備え、
前記複数の半導体素子は前記配線基板の上に重ねて配設され、
前記中継部材は、前記複数の半導体素子の間に配設され、
前記中継部材と前記半導体素子及び前記配線基板とが、ボンディングワイヤにより接続され、
前記中継部材は、請求項1に記載の中継部材であることを特徴とする半導体装置。
Priority Applications (8)
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JP2005287538A JP4268607B2 (ja) | 2005-09-30 | 2005-09-30 | 半導体装置に配設される中継部材及び半導体装置 |
US11/295,472 US20070075437A1 (en) | 2005-09-30 | 2005-12-07 | Relay board and semiconductor device having the relay board |
TWRELAYBOAA TWI270154B (en) | 2005-09-30 | 2005-12-07 | H01l 25/18 200601 a i vhtw |
CN200510137573XA CN1941348B (zh) | 2005-09-30 | 2005-12-30 | 继电板及具有继电板的半导体器件 |
KR1020050135172A KR100724001B1 (ko) | 2005-09-30 | 2005-12-30 | 반도체 장치에 배열 설치된 중계 부재 |
CN2010105094562A CN102034793B (zh) | 2005-09-30 | 2005-12-30 | 继电板及具有继电板的半导体器件 |
KR1020070015927A KR100723591B1 (ko) | 2005-09-30 | 2007-02-15 | 반도체 장치 |
US12/824,117 US8404980B2 (en) | 2005-09-30 | 2010-06-25 | Relay board and semiconductor device having the relay board |
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JP2005287538A JP4268607B2 (ja) | 2005-09-30 | 2005-09-30 | 半導体装置に配設される中継部材及び半導体装置 |
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2005
- 2005-09-30 JP JP2005287538A patent/JP4268607B2/ja not_active Expired - Fee Related
- 2005-12-07 US US11/295,472 patent/US20070075437A1/en not_active Abandoned
- 2005-12-07 TW TWRELAYBOAA patent/TWI270154B/zh not_active IP Right Cessation
- 2005-12-30 CN CN2010105094562A patent/CN102034793B/zh not_active Expired - Fee Related
- 2005-12-30 KR KR1020050135172A patent/KR100724001B1/ko active IP Right Grant
- 2005-12-30 CN CN200510137573XA patent/CN1941348B/zh not_active Expired - Fee Related
-
2007
- 2007-02-15 KR KR1020070015927A patent/KR100723591B1/ko active IP Right Grant
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CN102034793B (zh) | 2012-07-25 |
KR20070037457A (ko) | 2007-04-04 |
TWI270154B (en) | 2007-01-01 |
TW200713474A (en) | 2007-04-01 |
US8404980B2 (en) | 2013-03-26 |
KR20070037280A (ko) | 2007-04-04 |
KR100723591B1 (ko) | 2007-06-04 |
US20100258926A1 (en) | 2010-10-14 |
JP2007103411A (ja) | 2007-04-19 |
CN1941348B (zh) | 2010-10-20 |
CN102034793A (zh) | 2011-04-27 |
US20070075437A1 (en) | 2007-04-05 |
KR100724001B1 (ko) | 2007-06-04 |
CN1941348A (zh) | 2007-04-04 |
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