JP7499114B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP7499114B2 JP7499114B2 JP2020140090A JP2020140090A JP7499114B2 JP 7499114 B2 JP7499114 B2 JP 7499114B2 JP 2020140090 A JP2020140090 A JP 2020140090A JP 2020140090 A JP2020140090 A JP 2020140090A JP 7499114 B2 JP7499114 B2 JP 7499114B2
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- semiconductor chip
- main surface
- semiconductor device
- die pad
- lead frame
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- 239000004065 semiconductor Substances 0.000 title claims description 148
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims description 86
- 229920005989 resin Polymers 0.000 claims description 52
- 239000011347 resin Substances 0.000 claims description 52
- 239000004020 conductor Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 description 53
- 239000002184 metal Substances 0.000 description 53
- 239000000463 material Substances 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 14
- 230000001070 adhesive effect Effects 0.000 description 14
- 239000010410 layer Substances 0.000 description 13
- 239000010949 copper Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 5
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910000851 Alloy steel Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49506—Lead-frames or other flat leads characterised by the die pad an insulative substrate being used as a diepad, e.g. ceramic, plastic
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H01L23/495—Lead-frames or other flat leads
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/186—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Description
まず、第1実施形態について説明する。第1実施形態は半導体装置に関する。
まず、半導体装置の構造について説明する。図1は、第1実施形態に係る半導体装置を示す模式図である。図2は、第1実施形態に係る半導体装置を示す断面図である。図2は、図1中のII-II線に沿った断面図である。
次に、第1実施形態に係る半導体装置1の製造方法について説明する。この方法では、複数のリードフレーム10を含むリードフレーム集合体を形成し、その後に中継基板20をリードフレーム10の凹部11に配置し、中継基板20の上に第1半導体チップ30及び第2半導体チップ40を設ける。図4は、リードフレーム集合体のレイアウトを示す図である。図5~図10は、第1実施形態に係る半導体装置1の製造方法を示す断面図である。
次に、第2実施形態について説明する。第2実施形態は、主として第1半導体チップ及び第2半導体チップの配置の点で第1実施形態と相違する。図12は、第2実施形態に係る半導体装置を示す模式図である。図13は、第2実施形態に係る半導体装置を示す断面図である。図13は、図12中のXIII-XIII線に沿った断面図である。なお、図12では、樹脂部70を透過してリードフレーム10、中継基板20、第1半導体チップ30及び第2半導体チップ40等を図示している。また、図12では、配線21等の図示を省略している。
次に、第3実施形態について説明する。第3実施形態は、主として第1半導体チップの実装の形態の点で第1実施形態と相違する。図14は、第3実施形態に係る半導体装置を示す断面図である。
10 リードフレーム
10A 上面(第1主面)
10B 下面(第2主面)
11 凹部
11A 底面
16 ダイパッド
17 リード
20、201、202 中継基板
20A 上面(第3主面)
20B 下面(第4主面)
30、40 半導体チップ
51、52、53、54 ボンディングワイヤ
Claims (10)
- 第1主面と、前記第1主面とは反対側の第2主面とを備え、前記第1主面に凹部を含むリードフレームと、
第3主面と、前記第3主面とは反対側の第4主面とを備え、前記第4主面を前記凹部の底面に対向させて前記凹部内に配置された中継基板と、
前記第3主面の上に設けられた第1半導体チップと、
前記リードフレームと前記中継基板とを接続する第1導電材と、
前記中継基板と前記第1半導体チップとを接続する第2導電材と、
前記中継基板、前記第1半導体チップ、前記第1導電材及び前記第2導電材を封止する樹脂部と、
を有し、
前記リードフレームは、
前記凹部を含むダイパッドと、
前記ダイパッドの周囲に配置されたリードと、
を有し、
前記リードは、
前記第1主面に含まれる第1上面と、
前記第2主面に含まれる第1下面と、
前記第1上面及び前記第1下面に繋がる第1側面と、
を有し、
前記ダイパッドは、
前記第1主面に含まれ、前記第1上面と面一の第2上面と、
前記第2主面に含まれ、前記第1下面と面一の第2下面と、
前記第2上面及び前記第2下面に繋がる第2側面と、
を有し、
前記ダイパッドの最大厚さは、前記第1上面と前記第1下面との間の距離と等しく、
前記樹脂部は、前記第1下面及び前記第2下面と面一の第3下面を有し、
前記樹脂部により、前記第1上面と、前記第1側面の一部と、前記第2上面と、前記第2側面とが被覆され、
前記第3下面から、前記第1下面と、前記第2下面とが露出し、
前記第2主面と前記第3主面との間の第2距離は、前記第2主面と前記第1主面との間の第1距離以下であることを特徴とする半導体装置。 - 前記第1導電材は、ボンディングワイヤであり、
前記第2導電材は、ボンディングワイヤ又は導電バンプであることを特徴とする請求項1に記載の半導体装置。 - 前記第3主面の上方に設けられた第2半導体チップと、
前記中継基板と前記第2半導体チップとを接続する第3導電材と、
を有することを特徴とする請求項1又は2に記載の半導体装置。 - 前記第3導電材は、ボンディングワイヤであることを特徴とする請求項3に記載の半導体装置。
- 前記第1半導体チップと前記第2半導体チップとを接続する第4導電材を有することを特徴とする請求項3又は4に記載の半導体装置。
- 前記第2半導体チップは、前記第1半導体チップの上に設けられていることを特徴とする請求項3乃至5のいずれか1項に記載の半導体装置。
- 前記第2半導体チップは、前記中継基板の上に、前記第1半導体チップと並んで設けられていることを特徴とする請求項3乃至5のいずれか1項に記載の半導体装置。
- 前記中継基板は、配線基板を含むことを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置。
- 前記中継基板は、フレキシブル配線基板を含むことを特徴とする請求項1乃至7のいずれか1項に記載の半導体装置。
- 第1主面と、前記第1主面とは反対側の第2主面とを備え、前記第1主面に凹部を含むリードフレームを作成する工程と、
第3主面と、前記第3主面とは反対側の第4主面とを備える中継基板を、前記第4主面を前記凹部の底面に対向させて前記凹部内に配置する工程と、
前記第3主面の上に第1半導体チップを設ける工程と、
前記リードフレームと前記中継基板とを接続する第1導電材を設ける工程と、
前記中継基板と前記第1半導体チップとを接続する第2導電材を設ける工程と、
前記中継基板、前記第1半導体チップ、前記第1導電材及び前記第2導電材を封止する樹脂部を設ける工程と、
を有し、
前記リードフレームは、
前記凹部を含むダイパッドと、
前記ダイパッドの周囲に配置されたリードと、
を有し、
前記リードは、
前記第1主面に含まれる第1上面と、
前記第2主面に含まれる第1下面と、
前記第1上面及び前記第1下面に繋がる第1側面と、
を有し、
前記ダイパッドは、
前記第1主面に含まれ、前記第1上面と面一の第2上面と、
前記第2主面に含まれ、前記第1下面と面一の第2下面と、
前記第2上面及び前記第2下面に繋がる第2側面と、
を有し、
前記ダイパッドの最大厚さは、前記第1上面と前記第1下面との間の距離と等しく、
前記樹脂部は、前記第1下面及び前記第2下面と面一の第3下面を有し、
前記樹脂部により、前記第1上面と、前記第1側面の一部と、前記第2上面と、前記第2側面とが被覆され、
前記第3下面から、前記第1下面と、前記第2下面とが露出し、
前記第2主面と前記第3主面との間の第2距離は、前記第2主面と前記第1主面との間の第1距離以下であることを特徴とする半導体装置の製造方法。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001274312A (ja) | 2000-03-28 | 2001-10-05 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2004522297A (ja) | 2001-02-27 | 2004-07-22 | チップパック,インク. | プラスチック半導体パッケージ |
JP2006086337A (ja) | 2004-09-16 | 2006-03-30 | Sanken Electric Co Ltd | 樹脂封止型電子装置及びその製法 |
JP2007110108A (ja) | 2005-10-14 | 2007-04-26 | Integrant Technologies Inc | 積層型集積回路チップ及びパッケージ |
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JPH0521480A (ja) | 1991-07-12 | 1993-01-29 | Dainippon Printing Co Ltd | リードフレーム |
JP4268607B2 (ja) * | 2005-09-30 | 2009-05-27 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置に配設される中継部材及び半導体装置 |
JP4707548B2 (ja) * | 2005-12-08 | 2011-06-22 | 富士通セミコンダクター株式会社 | 半導体装置、及び半導体装置の製造方法 |
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JP2001274312A (ja) | 2000-03-28 | 2001-10-05 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
JP2004522297A (ja) | 2001-02-27 | 2004-07-22 | チップパック,インク. | プラスチック半導体パッケージ |
JP2006086337A (ja) | 2004-09-16 | 2006-03-30 | Sanken Electric Co Ltd | 樹脂封止型電子装置及びその製法 |
JP2007110108A (ja) | 2005-10-14 | 2007-04-26 | Integrant Technologies Inc | 積層型集積回路チップ及びパッケージ |
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