JP4707548B2 - 半導体装置、及び半導体装置の製造方法 - Google Patents
半導体装置、及び半導体装置の製造方法 Download PDFInfo
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- JP4707548B2 JP4707548B2 JP2005354986A JP2005354986A JP4707548B2 JP 4707548 B2 JP4707548 B2 JP 4707548B2 JP 2005354986 A JP2005354986 A JP 2005354986A JP 2005354986 A JP2005354986 A JP 2005354986A JP 4707548 B2 JP4707548 B2 JP 4707548B2
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Description
[1.本発明の中継部材及び当該中継部材を備えた半導体装置の実施の形態]
[第1の実施の形態]
図1は、本発明の第1の実施の形態に係る中継部材及び当該中継部材を備えた半導体装置の断面図である。図2は、図1に示す半導体装置の部分拡大平面図であり、図1に示す封止樹脂9の図示は省略している。図3は、図1及び図2に示すダイパッド(ダイステージ)21、インナーリード部22等が形成されたリードフレーム20の部分平面図である。
第1の半導体チップ2の電極と第2の半導体チップ6の電極、第1の半導体チップ2の電極とリードフレーム20のインナーリード部22は、それぞれボンディングワイヤ7によって接続されている。
次に、本発明の第2の実施の形態について説明する。なお、以下では、図1乃至図13を参照して説明した部分と同じ部分については同じ符号を付して、その説明を省略する。
次に、本発明の第3の実施の形態について説明する。なお、以下では、図14を参照して説明した部分と同じ部分については同じ符号を付して、その説明を省略する。
次に、本発明の第4の実施の形態について説明する。なお、以下では、図1乃至図22
を参照して説明した部分と同じ部分については同じ符号を付して、その説明を省略する。
図23に示すように、かかる構造を有する中継部材75の分割された夫々の領域75a及び75bを橋設するように、第2の半導体チップ6が中継部材75の導体部32の主面(導体面)上に設けられている。
次に、本発明の第5の実施の形態について説明する。なお、以下では、図1乃至30を参照して説明した部分と同じ部分については同じ符号を付して、その説明を省略する。
但し、中継部材104に設けられる第2の半導体チップ6の数に限定はなく、2つ以上の第2の半導体チップ6を中継部材104に配設してもよい。半導体装置内に配設する半導体チップの数を増やすことにより、半導体装置の一層の多機能化、大容量化、高密度化を実現することができる。
次に、本発明の第6の実施の形態について説明する。なお、以下では、図1乃至32を参照して説明した部分と同じ部分については同じ符号を付して、その説明を省略する。
次に、本発明の第7の実施の形態について説明する。なお、以下では、図1乃至図33
を参照して説明した部分と同じ部分については同じ符号を付して、その説明を省略する。
次に、本発明の第8の実施の形態について説明する。なお、以下では、図1乃至図35
を参照して説明した部分と同じ部分については同じ符号を付して、その説明を省略する。
次に、本発明の第9の実施の形態について説明する。なお、以下では、図1乃至図37
を参照して説明した部分と同じ部分については同じ符号を付して、その説明を省略する。
次に、本発明の第10の実施の形態について説明する。なお、以下では、図1乃至図39を参照して説明した部分と同じ部分については同じ符号を付して、その説明を省略する。
[2.本発明の半導体装置の製造方法の実施の形態]
次に、上述の本発明の中継部材及び半導体装置の製造方法の実施の形態について説明する。
(付記1) 半導体装置に配設される中継部材であって、
全面が導体物からなる主面を有することを特徴とする中継部材。
(付記2) 当該中継基板は、前記半導体装置に配設される少なくとも1つの半導体素子と同一の材料から成る基板を含み、
前記主面は前記基板の上方に形成されていることを特徴とする付記1記載の中継部材。
(付記3) 前記主面上に、開口部を有する樹脂膜が形成されたことを特徴とする付記1又は2記載の中継部材。
(付記4) 前記主面に溝部が形成され、前記溝部により前記主面は複数の領域に分割されていることを特徴とする付記1乃至3いずれか一項記載の中継部材。
(付記5) 第1及び第2の半導体素子と、
前記第1の半導体素子と前記第2の半導体素子との接続、又は前記第2の半導体素子と配線基板又はリードフレームとの接続を中継する中継部材と、を備えた半導体装置において、
前記中継部材は、前記第1及び第2の半導体素子の間に配設され、
前記中継部材の主面の全面が導体物からなり、
前記中継部材と前記第2の半導体素子、及び前記中継基板と前記第1の半導体素子又は前記配線基板又は前記リードフレームとが、ボンディングワイヤにより接続されたことを特徴とする半導体装置。
(付記6) 前記中継部材は、前記第1及び第2の半導体素子の少なくとも1つの半導体素子と同一の材料から成る基板を含み、
前記主面は前記基板の上方に形成されていることを特徴とする付記5記載の半導体装置。
(付記7) 前記中継部材の前記主面上に、前記ボンディングワイヤを接続することが可能な開口部を有する樹脂膜が形成されていることを特徴とする付記5又は6記載の半導体装置。
(付記8) 前記中継部材の前記主面に溝部が形成され、前記溝部により前記中継部材の前記主面は複数の領域に分割されていることを特徴とする付記5乃至7いずれか一項記載の半導体装置。
(付記9) 前記第2の半導体素子は、前記中継部材の上に配設され、
前記中継部材の前記主面は、前記第2の半導体素子の主面よりも大きいことを特徴とする付記5乃至8いずれか一項記載の半導体装置。
(付記10) 前記中継部材は、前記第2の半導体素子の電源電極又は接地電極と接続されていることを特徴とする付記9記載の半導体装置。
(付記11) 前記中継部材は、前記第1及び第2の半導体素子の間に複数配設され、
前記第2の半導体素子が、当該複数の中継部材の夫々の一部の上に設けられていることを特徴とする付記5乃至10いずれか一項記載の半導体装置。
(付記12) 前記複数の中継部材は、共通の単一のフィルム状接着剤により、第1の半導体素子の上に固着されていることを特徴とする付記11記載の半導体装置。
(付記13) 前記第2の半導体素子は、前記中継部材の上に複数配設されていることを特徴とする付記5乃至12いずれか一項記載の半導体装置。
(付記14) 前記第1の半導体素子の上に前記中継部材が形成され、前記中継部材の上に前記第2の半導体素子が形成され、
前記中継部材の一の方向における長さは、当該一の方向における前記第1の半導体及び前記第2の半導体素子の長さよりも短く、前記第1の半導体素子において前記中継部材と重ならない領域が形成され、
前記中継部材の他の方向における長さは、当該他の方向における前記第1の半導体及び前記第2の半導体素子の長さよりも長く、前記中継部材において前記第2の半導体素子と重ならない領域が形成されていることを特徴とする付記5乃至8いずれか一項記載の半導体装置。
(付記15) 中継部材を備えた半導体装置の製造方法であって、
前記中継部材にフィルム状の接着剤を貼り付ける工程と、
一の箇所では前記中継部材のみを切断し、他の箇所では前記中継部材と前記中継部材に貼り付けられた前記接着剤の双方を切断して、共通の単一の前記フィルム状接着剤に接着している複数の分割された中継部材を形成する工程と、
当該複数の分割された中継部材を同時に半導体素子に配設する工程と、
を含むことを特徴とする半導体装置の製造方法。
(付記16) 前記中継部材のみの切断は、前記中継部材の導体部の切断であることを特徴とする付記15記載の製造方法。
(付記17) 前記中継部材のみの切断は、レーザ加工によって行われることを特徴とする付記15又は16記載の半導体装置の製造方法。
2 第1の半導体素子
4、40、51、52、53、54、55、75、80、85、90、95、104、105、151 中継部材
5 接着剤
6 第2の半導体素子
7 ボンディングワイヤ
10、50、60、70、100、110、150、200、300 半導体装置
22 リードフレーム
32 導体部
36 基板
76、81、86、91、96 溝部
Claims (8)
- 第1及び第2の半導体素子と、
前記第1の半導体素子と前記第2の半導体素子との接続、又は前記第2の半導体素子と配線基板又はリードフレームとの接続を中継する中継部材と、を備えた半導体装置において、
前記中継部材は、前記第1及び第2の半導体素子の間に複数、共通の単一のフィルム状接着剤により第1の半導体素子の上に固着され、
前記中継部材は、主面に導体物を有し、
前記中継部材と前記第2の半導体素子、及び前記中継基板と前記第1の半導体素子又は前記配線基板又は前記リードフレームとが、ボンディングワイヤにより接続されたことを特徴とする半導体装置。 - 前記第2の半導体素子が、当該複数の中継部材の夫々の一部の上に設けられていることを特徴とする請求項1記載の半導体装置。
- 第1及び第2の半導体素子と、
前記第1の半導体素子と前記第2の半導体素子との接続、又は前記第2の半導体素子と配線基板又はリードフレームとの接続を中継する中継部材と、を備えた半導体装置において、
前記中継部材は、前記第1及び第2の半導体素子の間に配設され、
導体物からなる前記中継部材の主面に溝部が形成され、前記溝部により前記主面は複数の領域に分割されており、
前記中継部材と前記第2の半導体素子、及び前記中継基板と前記第1の半導体素子又は前記配線基板又は前記リードフレームとが、ボンディングワイヤにより接続されたことを特徴とする半導体装置。 - 前記第2の半導体素子が、当該複数の領域の夫々の一部の上に設けられていることを特徴とする請求項3記載の半導体装置。
- 前記中継部材の前記主面上に、前記ボンディングワイヤを接続することが可能な開口部を有する樹脂膜が形成されていることを特徴とする請求項1、2、3又は4記載の半導体装置。
- 中継部材を備えた半導体装置の製造方法であって、
前記中継部材にフィルム状の接着剤を貼り付ける工程と、
一の箇所では前記中継部材のみを切断し、他の箇所では前記中継部材と前記中継部材に貼り付けられた前記接着剤の双方を切断して、共通の単一の前記フィルム状接着剤に接着している複数の分割された中継部材を形成する工程と、
当該複数の分割された中継部材を同時に半導体素子に配設する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記中継部材のみの切断は、前記中継部材の導体部の切断であることを特徴とする請求項6記載の製造方法。
- 前記中継部材のみの切断は、レーザ加工によって行われることを特徴とする請求項6又は7記載の半導体装置の製造方法。
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JP2005354986A JP4707548B2 (ja) | 2005-12-08 | 2005-12-08 | 半導体装置、及び半導体装置の製造方法 |
US11/377,393 US7973404B2 (en) | 2005-12-08 | 2006-03-17 | Relay board provided in semiconductor device, semiconductor device, and manufacturing method of semiconductor device |
TW095109161A TWI314761B (en) | 2005-12-08 | 2006-03-17 | Relay board provided in semiconductor device, semiconductor device, and manufacturing method of semiconductor device |
CNB200610073868XA CN100521193C (zh) | 2005-12-08 | 2006-04-06 | 设置在半导体器件中的中继板和半导体器件 |
CN200810169908XA CN101373719B (zh) | 2005-12-08 | 2006-04-06 | 具有中继板的半导体器件的制造方法 |
KR1020060031858A KR100878931B1 (ko) | 2005-12-08 | 2006-04-07 | 반도체 장치에 배치되는 중계 부재, 반도체 장치, 및반도체 장치의 제조 방법 |
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CN101740552B (zh) * | 2008-11-25 | 2012-05-23 | 南茂科技股份有限公司 | 多芯片封装结构及其制造方法 |
JP5404083B2 (ja) * | 2009-02-10 | 2014-01-29 | 株式会社東芝 | 半導体装置 |
WO2010131679A1 (ja) | 2009-05-14 | 2010-11-18 | ローム株式会社 | 半導体装置 |
JP5315268B2 (ja) | 2010-03-10 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 電子装置 |
KR101331980B1 (ko) * | 2012-02-06 | 2013-11-25 | 한국과학기술원 | 광섬유 광기반 균형 광세기 탐지법을 이용한 광신호와 전자신호 간 위상 탐지기 및 위상 탐지 방법 |
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TWI314761B (en) | 2009-09-11 |
CN101373719B (zh) | 2011-11-23 |
TW200723422A (en) | 2007-06-16 |
JP2007158244A (ja) | 2007-06-21 |
US20070132102A1 (en) | 2007-06-14 |
CN100521193C (zh) | 2009-07-29 |
CN101373719A (zh) | 2009-02-25 |
US7973404B2 (en) | 2011-07-05 |
KR20070061018A (ko) | 2007-06-13 |
CN1979847A (zh) | 2007-06-13 |
KR100878931B1 (ko) | 2009-01-19 |
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